CN108376731A - Light-emitting device and its manufacturing method - Google Patents
Light-emitting device and its manufacturing method Download PDFInfo
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- CN108376731A CN108376731A CN201810122643.1A CN201810122643A CN108376731A CN 108376731 A CN108376731 A CN 108376731A CN 201810122643 A CN201810122643 A CN 201810122643A CN 108376731 A CN108376731 A CN 108376731A
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 101
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000011148 porous material Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 44
- 238000003486 chemical etching Methods 0.000 claims description 39
- 238000000926 separation method Methods 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 description 21
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Microelectronics & Electronic Packaging (AREA)
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- Nanotechnology (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Led Devices (AREA)
Abstract
This disclosure relates to which a kind of light-emitting device, the light-emitting device include：Gallium nitride substrate includes the semi-polarity gallium nitride grown along semi-polarity crystalline phase；First catoptric arrangement, on gallium nitride substrate；Light emitting structure, on the first catoptric arrangement；Second catoptric arrangement, on light emitting structure.
Description
Technical field
This disclosure relates to a kind of light-emitting device and its manufacturing method.
Background technology
Recent years, some gallium nitride such as the University of California St Babara branch school in the U.S. and SONY, SUMITOMO of Japan
(GaN) research institution and company is successfully prepared for high power, efficient on some special GaN semi-polarity crystal faces
Blue, green light LED and laser diode etc..The special crystal face (such as (20 of these GaN21)、(3031) crystal face)
High efficiency, inefficient decline (efficiency droop) two pole of light emitting diode (LED) and high power long wavelength laser
There are great potentiality and advantage on pipe (LD).
Have now and has been reported in the blue laser for being successfully prepared vertical cavity surface light extraction on the GaN of the faces C on a small quantity
(VCSEL), however, the laser for the vertical cavity surface light extraction not prepared on the substrate of semi-polarity face even.One main cause
It is that can not obtain semi-polarity GaN of the large-area high-quality without fault.Studies have shown that (2021) GaN of crystal orientation is in green luminescence two
There are prodigious advantage and potentiality in terms of the laser of pole pipe and green light side light extraction.Accordingly, it is desirable to obtain a kind of large area
Semi-polarity GaN template of the high quality without fault, and can be (the 20 of production21) swashing for vertical cavity surface light extraction is prepared in GaN template
Light device.
Invention content
Present invention seek to address that above-mentioned and/or other technologies problem and providing a kind of hair based on semi-polarity gallium nitride substrate
Electro-optical device and its manufacturing method.
Accoding to exemplary embodiment, a kind of light-emitting device includes：Gallium nitride substrate includes half grown along semi-polarity crystalline phase
Polarity gallium nitride；First catoptric arrangement, on gallium nitride substrate；Light emitting structure, on the first catoptric arrangement；Second reflection
Structure, on light emitting structure.
Gallium nitride substrate includes along semi-polarity crystalline phase (2021) the semi-polarity gallium nitride grown is brilliant.The fault of gallium nitride substrate
Quantity be 0.
First catoptric arrangement includes the first distributed Blatt reflective structure.First distributed Blatt reflective structure includes having
Multiple first medium layers of first refractive index and multiple second dielectric layer with second refractive index different from first refractive index,
Wherein, first medium layer is on gallium nitride substrate or in second dielectric layer, and second dielectric layer is on first medium layer.First is situated between
Matter layer is n++Type GaN layer, second dielectric layer are n-type GaN layer.
First medium layer includes nano-pore.The density for the nano-pore that first medium layer includes is 10% to 80%, Huo Zhena
The aperture of metre hole is 5~100nm, and preferred value is 10 to 20nm.The first refractive index of first medium layer is 0 to 2.5nm, preferably
Value is 1.5~2.
The nano-pore in first medium layer is formed by chemical etching.The light-emitting device further includes being served as a contrast in gallium nitride
Conductive layer between bottom and the first catoptric arrangement and separation layer, wherein conductive layer is on gallium nitride substrate, to be used to form
Be used as in the chemical etching of nano-pore in one dielectric layer transmit electronics medium (here, conductive layer can not be directly
Electrode, since total can be placed into electrolyte, negative electrode of one of power-up can be immersed in electrolyte, so
Afterwards by electrolyte by electron-transport to conductive layer)；Separation layer on the electrically conductive and positioned at conductive layer and the first catoptric arrangement it
Between, with will be used by conductive layer and chemical etching in the chemical etching of the nano-pore in being used to form first medium layer
Solvent is kept apart.
Light emitting structure includes：Active layer, on the first catoptric arrangement；Electronic barrier layer, on active layer；Tunnel junction layer,
On electronic barrier layer.
Second catoptric arrangement includes the second distributed Blatt reflective structure.Second distributed Blatt reflective structure includes having
Multiple third dielectric layers of third reflect rate and multiple 4th dielectric layers with the fourth refractive index different from third reflect rate,
Wherein, third dielectric layer is on light emitting structure or on the 4th dielectric layer, and the 4th dielectric layer is on third dielectric layer.Third medium
Layer is n++ type GaN layers, and the 4th dielectric layer is n-type GaN layer.
Third dielectric layer includes nano-pore.The density for the nano-pore that third dielectric layer includes is 10% to 80%, Huo Zhena
The aperture of metre hole is 5~100nm, and preferred value is 10 to 20nm.The third reflect rate of third dielectric layer is 0 to 2.5nm, preferred value
It is 1.5~2.
The nano-pore in third dielectric layer is formed by chemical etching.The light-emitting device further includes being served as a contrast in gallium nitride
Conductive layer between bottom and the first catoptric arrangement and separation layer, wherein conductive layer is on gallium nitride substrate, to be used to form
Be used as in the chemical etching of nano-pore in one dielectric layer transmit electronics medium (here, conductive layer can not be directly
Electrode, since total can be placed into electrolyte, negative electrode of one of power-up can be immersed in electrolyte, so
Afterwards by electrolyte by electron-transport to conductive layer)；Separation layer on the electrically conductive and positioned at conductive layer and the first catoptric arrangement it
Between, with will be used by conductive layer and chemical etching in the chemical etching of the nano-pore in being used to form first medium layer
Solvent is kept apart.
According to another exemplary embodiment, a kind of manufacturing method of light-emitting device includes：Including being given birth to along semi-polarity crystalline phase
The first catoptric arrangement is formed on the gallium nitride substrate of long semi-polarity gallium nitride；Light-emitting junction is formed on the first catoptric arrangement
Structure；The second catoptric arrangement is formed on light emitting structure.
Gallium nitride substrate includes the semi-polarity gallium nitride grown along semi-polarity crystalline phase (2021).The layer of gallium nitride substrate
Wrong quantity is 0.
The step of forming the first catoptric arrangement include：Formed on gallium nitride substrate includes the of multiple first medium layers pair
One distributed Blatt reflective structure, wherein first medium layer to include have first refractive index first medium layer and with
The second dielectric layer of the second different refractive index of first refractive index, first medium layer are formed on gallium nitride substrate or are formed in
On second medium layer, second dielectric layer is formed on first medium layer.
The method further includes：Nano-pore is formed in first medium layer.First medium is formed by chemical etching
Nano-pore in layer, wherein before the step of forming the first catoptric arrangement, the method further includes：On gallium nitride substrate
Conductive layer is formed, and forms separation layer on the electrically conductive, wherein in chemical etching, conductive layer is used as transmission electronics
(here, conductive layer can not be direct electrode to medium, and since total can be placed into electrolyte, one of them adds
The negative electrode of electricity can be immersed in electrolyte, then by electrolyte by electron-transport to conductive layer), and will be led by separation layer
Electric layer is kept apart with solvent used by chemical etching.
Formed light emitting structure the step of include：Active layer is formed on the first catoptric arrangement；Electronics is formed on active layer
Barrier layer；Tunnel junction layer is formed on electronic barrier layer.
The step of forming the second catoptric arrangement include：It includes the second of multiple second dielectric layer pair to be formed on light emitting structure
Distributed Blatt reflective structure, wherein second dielectric layer is to including having the third dielectric layer of third reflect rate and with the
4th dielectric layer of the different fourth refractive index of three refractive index, third dielectric layer are formed on light emitting structure or are formed in the 4th Jie
On matter layer, the 4th dielectric layer is formed on third dielectric layer.
The method further includes：Nano-pore is formed in third dielectric layer.Third medium is formed by chemical etching
Nano-pore in layer, wherein before the step of forming the first catoptric arrangement, the method further includes：On gallium nitride substrate
Conductive layer is formed, and forms separation layer on the electrically conductive, wherein in chemical etching, conductive layer is used as transmission electronics
(here, conductive layer can not be direct electrode to medium, and since total can be placed into electrolyte, one of them adds
The negative electrode of electricity can be immersed in electrolyte, then by electrolyte by electron-transport to conductive layer), and will be led by separation layer
Electric layer is kept apart with solvent used by chemical etching.
Description of the drawings
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the disclosure
Example, and together with specification for explaining the principles of this disclosure.
Fig. 1 is the schematic cross sectional views for showing light-emitting device accoding to exemplary embodiment；
Fig. 2 shows the electron micrographs of light-emitting device accoding to exemplary embodiment；
Fig. 3 is the flow chart for the manufacturing method for showing light-emitting device accoding to exemplary embodiment.
Specific implementation mode
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to
When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment
Described in embodiment do not represent all implementations consistent with this disclosure.On the contrary, they be only with it is such as appended
The example of the consistent device and method of some aspects be described in detail in claims, the disclosure.
It is the purpose only merely for description specific embodiment in the term that the disclosure uses, is not intended to be limiting and originally opens.It removes
Non- defined otherwise, every other scientific and technical terms used herein have and those skilled in the art
Normally understood identical meaning.The "an" of singulative used in disclosure and the accompanying claims book, " institute
State " and "the" be also intended to including most forms, unless context clearly shows that other meanings.It is also understood that making herein
Term "and/or" refer to and include one or more associated list items purposes any or all may combine.
It will be appreciated that though various information, but this may be described using term first, second, third, etc. in the disclosure
A little information should not necessarily be limited by these terms.These terms are only used for same type of information being distinguished from each other out.For example, not departing from
In the case of disclosure range, first can also be referred to as second, and vice versa.Depending on context, word as used in this
Language " if " can be construed to " ... when " or " when ... " or " in response to determination ".
In order to make those skilled in the art more fully understand the disclosure, with reference to the accompanying drawings and detailed description to this public affairs
It opens and is described in further detail.
Fig. 1 is the schematic cross sectional views for showing light-emitting device accoding to exemplary embodiment.As shown in fig. 1, the hair
Electro-optical device includes：Gallium nitride substrate 110, the first catoptric arrangement 130, light emitting structure 150 and the second catoptric arrangement 170.
Gallium nitride (GaN) substrate 110 may include the semi-polarity gallium nitride grown along semi-polarity crystalline phase, for example, edge
Semi-polarity crystalline phase (202Or (30 1)31) the semi-polarity gallium nitride grown.The quantity of the fault of gallium nitride substrate 110 can be with
It is 0.Such gallium nitride substrate 110 can be obtained by carrying out epitaxial growth in Sapphire Substrate 100.Here it is possible to
Use the semi-polarity (20 of large scale (4 inches) without fault of Saphlux companies21) GaN substrate is as gallium nitride substrate 110.
First catoptric arrangement 130 can be on gallium nitride substrate 110.Accoding to exemplary embodiment, the first catoptric arrangement 130
Can be distributed Blatt reflective structure with the second catoptric arrangement 170 which will be described.For example, the first catoptric arrangement 130
May include that the first medium layer that is made of first medium layer 131 and second dielectric layer 133 is right.
As shown in fig. 1, first medium layer 131 can be on gallium nitride substrate 110 or in second dielectric layer 133.The
Second medium layer 133 can be on first medium 131.First medium layer 131 can pass through metal organic chemical vapor deposition MOCVD
Method is formed, for example, be formed directly into second dielectric layer 133, or there are conductive layer 111 and separation layers 113 for centre (will be
Be further explained below) in the case of be formed on gallium nitride substrates 110.First medium layer 131 can be highly doped n++
Type GaN layer.The impurity of the doping of such first medium layer 131 can be Si or Ge, and the concentration of impurity can be 2E19cm-3.Second dielectric layer 133 can be formed by metal organic chemical vapor deposition MOCVD methods, for example, being formed directly into first
On dielectric layer 131.Second dielectric layer 133 can be low-doped n-type GaN layer.The doping of such second dielectric layer 133 it is miscellaneous
Matter can be Si or Ge, and the concentration of impurity can be 1E18cm-3。
Although including that 3.5 first medium layers are right shown in the drawings of the first catoptric arrangement 130, exemplary embodiment
It is without being limited thereto, for example, the first catoptric arrangement 130 may include that 10-20 first medium layer is right.In addition, 131 He of first medium layer
The thickness of second dielectric layer 133 can be equal to the 1/4 of the wavelength of the desired light emitted of light-emitting device.
The refractive index of first medium layer 131 can be different from the refractive index of second dielectric layer 133, second dielectric layer 133
Refractive index is 2.4~2.6；131 refractive index of first medium layer is 0~2.5, and it is 1.5~2 to have preferred value.For this purpose, first
Dielectric layer 131 may include nano-pore.
Fig. 2 shows the electron micrographs of light-emitting device accoding to exemplary embodiment.As shown in Figure 2, first is situated between
The density of nano-pore in matter layer 131 can be 10%-80%, and the aperture of nano-pore can be 5~100nm, preferred value 10
To 20nm.Because air can be filled in nano-pore, to pass through the nanometer for forming preset aperture in first medium layer 131
Hole can change the refractive index of the light of first medium layer 131.Simply directly calculation formula is：The refractive index of first medium layer=
The section duty ratio+1 of refractive index × nano-pore of second dielectric layer × (the section duty ratio of 1- nano-pores).
The nano-pore in first medium layer 131 can be formed by chemical etching.For this purpose, accoding to exemplary embodiment
Light-emitting device can also be included in conductive layer 111 and separation layer between gallium nitride substrate 110 and the first catoptric arrangement 130
113。
Conductive layer 111 can be formed in by metal organic chemical vapor deposition MOCVD methods on gallium nitride substrate 110,
For example, being formed directly on gallium nitride substrate 110.Conductive layer 111 can be n of the thickness within the scope of 500nm-3000nm+Type
GaN layer.Conductive layer 111 can be to be about 5E18cm-3Doped in concentrations profiled have Si or Ge.Conductive layer 111 can be used to form
It is used as transmitting the medium (for example, electrode) of electronics in the chemical etching of nano-pore in first medium layer 131.Here, it leads
Electric layer can not be direct electrode, since total can be placed into electrolyte, the negative electrode meeting of one of power-up
It is immersed in electrolyte, then by electrolyte by electron-transport to conductive layer.
Separation layer 113 can be formed in by metal organic chemical vapor deposition MOCVD methods on conductive layer 111, for example,
It is formed directly on conductive layer 111.Separation layer 113 can be the GaN layer that thickness is 500nm.Can undope separation layer 113.
Separation layer 113 can be in the chemical etching of the nano-pore in being used to form first medium layer 131 by conductive layer 111 and electrification
Solvent is kept apart used by learning etching.First catoptric arrangement 130 can be formed, for example, being formed directly on separation layer 113.
Here, in the metal for being used to form conductive layer 111, separation layer 113, first medium layer 131, second dielectric layer 133
In organic chemical vapor deposition MOCVD methods, hydrogen can be used as the atmosphere of carrier gas and growth room, the growth temperature of growth room
Degree can be 900-1100 DEG C, and the pressure of the atmosphere of growth room can be 50-500mbar, growth rate can be 0.5-4 μm/
h。
Referring to Fig.1, light emitting structure 150 may include active layer 151, electronic barrier layer (EBL) 153, tunnel knot (Tunnel
Junction) layer 155.
Active layer 151 can be formed, for example, being formed directly on the first catoptric arrangement 130.For example, active layer 151 can be with
It is formed in by MOCVD methods on the first medium layer 131 of the first catoptric arrangement 130.Active layer 151 can be that thickness is 50nm
InGaN/GaN layers.It here, can be in the metal organic chemical vapor deposition MOCVD methods for being used to form active layer 151
Using nitrogen as the atmosphere of carrier gas and growth room, the growth temperature of growth room can be 760-850 DEG C, the atmosphere of growth room
Pressure can be 100-500mbar.
Electronic barrier layer 153 can be formed, for example, being formed directly on active layer 151.For example, electronic barrier layer 153 can
To be formed on active layer 151 by MOCVD methods.Electronic barrier layer 153 can be AlGaN layer, wherein Al atomic quantity ratios
Can be 15%-20%.Here, in the metal organic chemical vapor deposition MOCVD methods for being used to form electronic barrier layer 153
In, nitrogen can be used as the atmosphere of carrier gas and growth room, the growth temperature of growth room can be 900-950 DEG C, growth room
The pressure of atmosphere can be 100-500mbar.
Tunnel junction layer 155 can be formed, for example, being formed directly on electronic barrier layer 153.For example, tunnel junction layer 155 can
To be formed on electronic barrier layer 153 by MOCVD methods.Tunnel junction layer 155 can be with the thickness of 50nm, wherein about 10
The tunnel junctions that the GaN of the high n-type doping of the GaN and 10~20nm of the high p-type doping of~20nm is combined into.Here, for shape
At in the metal organic chemical vapor deposition MOCVD methods of tunnel junction layer 155, can use hydrogen as carrier gas and growth room
Atmosphere.
Second catoptric arrangement 170 can be on light emitting structure 150.Accoding to exemplary embodiment, the second catoptric arrangement 170 can
With identical as the structure of the first catoptric arrangement 130.That is, the second catoptric arrangement 170 can be distributed Blatt reflective structure.Second
Catoptric arrangement 170 may include the second dielectric layer pair being made of third dielectric layer 171 and the 4th dielectric layer 173.
As shown in fig. 1, third dielectric layer 171 can be on light emitting structure 150 or on the 4th dielectric layer 173.4th
Dielectric layer 173 can be on third medium 171.Third dielectric layer 171 can pass through the metal organic chemical vapor deposition side MOCVD
Method is formed, for example, being formed directly on light emitting structure 150 or being formed directly on the 4th dielectric layer 173.Third dielectric layer 171
Can be highly doped n++Type GaN layer.The impurity of the doping of such third dielectric layer 171 can be Si or Ge, impurity
Concentration can be 2E19cm-3.4th dielectric layer 173 can be formed by metal organic chemical vapor deposition MOCVD methods, example
Such as, it is formed directly on third dielectric layer 171.4th dielectric layer 173 can be low-doped n-type GaN layer.Such 4th is situated between
The impurity of the doping of matter layer 173 can be Si or Ge, and the concentration of impurity can be 1E18cm-3。
In addition, in the metal organic chemical vapor deposition MOCVD methods of third dielectric layer 171 and the 4th dielectric layer 173, it can
To use hydrogen as the atmosphere of carrier gas and growth room, the growth temperature of growth room can be 900-1100 DEG C, the gas of growth room
The pressure of atmosphere can be 50-500mbar, and growth rate can be 0.5-4 μm/h.
Although including 3.5 second dielectric layer pair, exemplary embodiment shown in the drawings of the second catoptric arrangement 170
It is without being limited thereto, for example, the second catoptric arrangement 170 may include 10-20 second dielectric layer pair.In addition, 171 He of third dielectric layer
The thickness of 4th dielectric layer 173 can be equal to the 1/4 of the wavelength of the desired light emitted of light-emitting device.
The refractive index of third dielectric layer 171 can be different from the refractive index of the 4th dielectric layer 173, the 4th dielectric layer 173
Refractive index is 2.4~2.6；171 refractive index of third dielectric layer is 0~2.5, and it is 1.5~2 to have preferred value.For this purpose, third
Dielectric layer 171 may include nano-pore.
Fig. 2 shows the electron micrographs of light-emitting device accoding to exemplary embodiment.As shown in Figure 2, third is situated between
The density of nano-pore in matter layer 171 can be 10%-80%, and the aperture of nano-pore can be 5~100nm, preferred value 10
To 20nm.Because air can be filled in nano-pore, to pass through the nanometer for forming preset aperture in third dielectric layer 171
Hole can change the refractive index of the light of third dielectric layer 171.Simply directly calculation formula is：The refractive index of first medium layer=
The section duty ratio+1 of refractive index × nano-pore of second dielectric layer × (the section duty ratio of 1- nano-pores).
The nano-pore in third dielectric layer 171 can be formed by chemical etching.For this purpose, accoding to exemplary embodiment
Light-emitting device can also be included in conductive layer 111 and separation layer between gallium nitride substrate 110 and the first catoptric arrangement 130
113.As described above, conductive layer 111 can in the chemical etching of the nano-pore in being used to form third dielectric layer 171 by with
Make the medium of transmission electronics.Here, conductive layer can not be direct electrode, since total can be placed into electrolyte
In, negative electrode of one of power-up can be immersed in electrolyte, then by electrolyte by electron-transport to conductive layer.Isolation
Layer 113 can lose conductive layer 111 and electrochemistry in the chemical etching of the nano-pore in being used to form third dielectric layer 171
Solvent is kept apart used by carving.
It accoding to exemplary embodiment, can be in same electrochemical etching process simultaneously in first medium layer 131 and third
Nano-pore is formed in dielectric layer 171.In particular, the structure for being formed with the first and second catoptric arrangements 130 and 170 can be put
Enter such as HF solution, HNO3In solution or NaCl solution.It is then possible to be electrodes conduct channel with conductive layer 111 and apply
The voltage of 1-5V, so as to be etched selectively to the n adulterated as high n-type++The first medium layer 131 and third of type GaN layer
Dielectric layer 171, to form nano-pore in them.The size and first medium layer 131 for the voltage that can be applied by control
Aperture and the density of the nano-pore of formation are controlled with the doping concentration of impurity in third dielectric layer 171.
Fig. 3 is the flow chart for the manufacturing method for showing light-emitting device accoding to exemplary embodiment.According to exemplary implementation
The manufacturing method of the light-emitting device of example can be used for manufacturing the light-emitting device above with reference to Fig. 1 and Fig. 2 descriptions, therefore, below
The middle repeated description by omission for same characteristic features.
As shown in Figure 3, can include the semi-polarity gallium nitride grown along semi-polarity crystalline phase in step S310
Gallium nitride substrate on form the first catoptric arrangement.Here, gallium nitride substrate may include along semi-polarity crystalline phase (2021) or
(3031) the semi-polarity gallium nitride grown.The quantity of the fault of gallium nitride substrate can be 0.
In particular, in step S310, it includes the of multiple first medium layers pair that can be formed on gallium nitride substrate
One first distributed Blatt reflective structure.Here, first medium layer is to may include the first medium layer with first refractive index
With the second dielectric layer with second refractive index different from first refractive index.It can be on gallium nitride substrate or in second medium
First medium layer is formed on layer, second dielectric layer can be formed on first medium layer.
First medium layer can be formed by metal organic chemical vapor deposition MOCVD methods, for example, being formed directly into
On second medium layer, or there are be formed in nitridation in the case of conductive layer and separation layer (will be described in detail hereinafter) in centre
In gallium substrate.First medium layer can be highly doped n++Type GaN layer.The impurity of the doping of such first medium layer can be
The concentration of Si or Ge, impurity can be 2E19cm-3.Second dielectric layer can pass through metal organic chemical vapor deposition MOCVD
Method is formed, for example, being formed directly on first medium layer.Second dielectric layer can be low-doped n-type GaN layer.It is such
The impurity of the doping of second dielectric layer can be Si or Ge, and the concentration of impurity can be 1E18cm-3。
First catoptric arrangement may include that 3.5 first medium layers are right, but exemplary embodiment is without being limited thereto, for example,
First catoptric arrangement may include that 10-20 first medium layer is right.In addition, the thickness of first medium layer and second dielectric layer
With 1/4 of the wavelength equal to the light emitted desired by light-emitting device.
The refractive index of first medium layer can be different from the refractive index of second dielectric layer, and the refractive index of second dielectric layer is
2.4~2.6；The refractive index of first medium layer is 0~2.5, and it is 1.5~2 to have preferred value.For this purpose, accoding to exemplary embodiment
Light-emitting device manufacturing method may include in first medium layer formed nano-pore (S370).
The nano-pore in first medium layer can be formed by chemical etching.So that the nanometer in first medium layer
The density in hole is 10%-80%, and the aperture of nano-pore is 5~100nm, and preferred value is 10 to 20nm.For this purpose, according to exemplary reality
Apply the light-emitting device of example manufacturing method can also be included between gallium nitride substrate and the first catoptric arrangement formed conductive layer and
Separation layer.
Conductive layer can be formed on gallium nitride substrate by metal organic chemical vapor deposition MOCVD methods.Conductive layer
Can be n+ type GaN layer of the thickness within the scope of 500nm-3000nm.Conductive layer can be about 5E18cm-3 doped in concentrations profiled
There is Si or Ge.Conductive layer can be used as being used as passing in the chemical etching of the nano-pore in being used to form first medium layer
The medium or channel (for example, electrode) of transmission of electricity.Here, conductive layer can not be direct electrode, since total can be with
It is placed into electrolyte, negative electrode of one of power-up can be immersed in electrolyte, then by electrolyte by electron-transport
To conductive layer.
Separation layer can be formed on the electrically conductive by metal organic chemical vapor deposition MOCVD methods.Separation layer can be with
The GaN layer for being 500nm for thickness.Can undope separation layer.Separation layer can be in the nanometer in being used to form first medium layer
Conductive layer and solvent used by chemical etching are kept apart in the chemical etching in hole.First catoptric arrangement can be formed in
On separation layer.
In this way, the structure for being formed with the first catoptric arrangement can be put into such as HF solution, HNO3Solution or NaCl are molten
In liquid.It is then possible to using conductive layer as conductive channel and apply the voltage of 1-5V, so as to be etched selectively to as high n
The n of type doping++The first medium layer of type GaN layer, to form nano-pore in them.It can be by controlling the voltage applied
The doping concentration of impurity controls aperture and the density of the nano-pore of formation in size and first medium layer.
Here, in the Metallo-Organic Chemical Vapor for being used to form conductive layer, separation layer, first medium layer, second dielectric layer
It deposits in MOCVD methods, hydrogen can be used as the atmosphere of carrier gas and growth room, the growth temperature of growth room can be 900-
1100 DEG C, the pressure of the atmosphere of growth room can be 50-500mbar, and growth rate can be 0.5-4 μm/h.
However, exemplary embodiment is without being limited thereto, as shown in Figure 3, the laggard of the second catoptric arrangement can formd
The forming step S370 of row nano-pore, to form nano-pore in first medium layer and third dielectric layer simultaneously.
With reference to Fig. 3 light emitting structure can be formed in step S330 on the first catoptric arrangement.In particular, can be
Active layer is formed on one catoptric arrangement, electronic barrier layer then can be formed on active layer, and can be on electronic barrier layer
Form tunnel junction layer.
After foring light emitting structure, the second catoptric arrangement (S350) can be formed on light emitting structure.Can more than
It includes the of multiple second dielectric layer pair that face, which forms that the step of the first catoptric arrangement formed on light emitting structure same or similarly,
Two distributed Blatt reflective structures.Second dielectric layer is to may include having the third dielectric layer of third reflect rate and with the
4th dielectric layer of the different fourth refractive index of three refractive index.Third can be formed on light emitting structure or on the 4th dielectric layer
Dielectric layer can form the 4th dielectric layer on third dielectric layer.
Third dielectric layer can be formed by metal organic chemical vapor deposition MOCVD methods, for example, being formed directly into hair
On photo structure or the 4th dielectric layer.Third dielectric layer can be highly doped n++Type GaN layer.The doping of such third dielectric layer
Impurity can be Si or Ge, the concentration of impurity can be 2E19cm-3.4th dielectric layer can pass through Organometallic Chemistry gas
Mutually deposition MOCVD methods are formed, for example, being formed directly on third dielectric layer.4th dielectric layer can be low-doped N-shaped
GaN layer.The impurity of the doping of such 4th dielectric layer can be Si or Ge, and the concentration of impurity can be 1E18cm-3。
Second catoptric arrangement may include 3.5 second dielectric layer pair, but exemplary embodiment is without being limited thereto, for example,
Second catoptric arrangement may include 10-20 second dielectric layer pair.In addition, the thickness of third dielectric layer and the 4th dielectric layer
With 1/4 of the wavelength equal to the light emitted desired by light-emitting device.
It is different from each other similarly with the refractive index of first medium layer described above and second dielectric layer, third dielectric layer
Refractive index can be different from the refractive index of the 4th dielectric layer.It is received for this purpose, can be formed in first medium layer and third dielectric layer
Metre hole (S370).
The nano-pore in first medium layer and third dielectric layer can be formed by chemical etching.So that first is situated between
The density of matter layer and the nano-pore in third dielectric layer is 10%-80%, and the aperture of nano-pore is 5~100nm, preferred value 10
To 20nm.For this purpose, the manufacturing method of light-emitting device accoding to exemplary embodiment can also be included in gallium nitride substrate and first
Conductive layer and separation layer are formed between catoptric arrangement.
In this way, such as HF solution, HNO can be put into the structure for being formed with the first catoptric arrangement and the second catoptric arrangement3
In solution or NaCl solution.It is then possible to using conductive layer as electron transport channel and apply the voltage of 1-5V, so as to select
Etch to selecting property the n adulterated as high n-type++The first medium layer and third dielectric layer of type GaN layer are received to be formed in them
Metre hole.Can by control the voltage applied size and impurity in first medium layer and third dielectric layer doping concentration come
Control aperture and the density of the nano-pore formed.
In this way, the light-emitting device as described in above referring to Figures 1 and 2 can be manufactured.
Within term " about " and " about " can be used for meaning target size in some embodiments ± 20%, at some
In embodiment within ± the 10% of target size, in some embodiments target size ± 5% within, and also have and exist
In some embodiments within ± the 2% of target size.Term " about " and " about " it may include target size.
The techniques described herein scheme can be realized as method, wherein at least one embodiment has been provided.As described
Action performed by a part for method can sort in any suitable manner.Therefore, embodiment can be built, wherein respectively
Action is executed with the different order of the order from shown in, may include being performed simultaneously some actions, even if these actions are being said
It is illustrated as sequentially-operating in bright property embodiment.In addition, method may include in some embodiments it is more than those of showing
Action, include than those of showing less action in other embodiments.
Although at least one illustrative embodiment of the present invention is there is described herein, for those skilled in the art
For member, a variety of changes, modifications and improvement can be easy to carry out.Such changes, modifications and improvement are directed at the essence of the present invention
Within refreshing and range.Therefore, preceding description is only not intended as limiting by way of example.The present invention is only wanted by following patent
It asks and its equivalent is limited.
Claims (30)
1. a kind of light-emitting device, which is characterized in that the light-emitting device includes：
Gallium nitride substrate includes the semi-polarity gallium nitride grown along semi-polarity crystalline phase；
First catoptric arrangement, on gallium nitride substrate；
Light emitting structure, on the first catoptric arrangement；
Second catoptric arrangement, on light emitting structure.
2. light-emitting device as described in claim 1, which is characterized in that gallium nitride substrate includes along semi-polarity crystalline phase (2021) raw
Long semi-polarity gallium nitride is brilliant.
3. light-emitting device as claimed in claim 2, which is characterized in that the quantity of the fault of gallium nitride substrate is 0.
4. light-emitting device as described in claim 1, which is characterized in that the first catoptric arrangement includes the first distributed Blatt reflective
Structure.
5. light-emitting device as claimed in claim 4, which is characterized in that the first distributed Blatt reflective structure includes having first
Multiple first medium layers of refractive index and multiple second dielectric layer with second refractive index different from first refractive index,
Wherein, first medium layer is on gallium nitride substrate or in second dielectric layer, and second dielectric layer is on first medium layer.
6. light-emitting device as claimed in claim 5, which is characterized in that first medium layer is n++Type GaN layer, second dielectric layer are
N-type GaN layer.
7. light-emitting device as claimed in claim 5, which is characterized in that first medium layer includes nano-pore.
8. light-emitting device as claimed in claim 7, which is characterized in that the density for the nano-pore that first medium layer includes is 10%
Aperture to 80% either nano-pore is 5~100nm or the aperture of nano-pore is 10 to 20nm.
9. light-emitting device as claimed in claim 8, which is characterized in that the first refractive index of first medium layer is 0 to 2.5nm,
Or the first refractive index of first medium layer is 1.5~2.
10. light-emitting device as claimed in claim 7, which is characterized in that formed in first medium layer by chemical etching
Nano-pore.
11. light-emitting device as claimed in claim 10, which is characterized in that the light-emitting device further include in gallium nitride substrate and
Conductive layer between first catoptric arrangement and separation layer, wherein
Conductive layer is on gallium nitride substrate, to be used as in the chemical etching of the nano-pore in being used to form first medium layer
Transmit the medium of electronics；
Separation layer is on the electrically conductive and between conductive layer and the first catoptric arrangement, in being used to form first medium layer
Conductive layer and solvent used by chemical etching are kept apart in the chemical etching of nano-pore.
12. light-emitting device as described in claim 1, which is characterized in that light emitting structure includes：
Active layer, on the first catoptric arrangement；
Electronic barrier layer, on active layer；
Tunnel junction layer, on electronic barrier layer.
13. light-emitting device as described in claim 1, which is characterized in that the second catoptric arrangement includes that the second distribution bragg is anti-
Penetrate structure.
14. light-emitting device as claimed in claim 13, which is characterized in that the second distributed Blatt reflective structure includes having the
Multiple third dielectric layers of three refractive index and multiple 4th dielectric layers with the fourth refractive index different from third reflect rate,
Wherein, third dielectric layer is on light emitting structure or on the 4th dielectric layer, and the 4th dielectric layer is on third dielectric layer.
15. light-emitting device as claimed in claim 14, which is characterized in that third dielectric layer is n++Type GaN layer, the 4th dielectric layer
For n-type GaN layer.
16. light-emitting device as claimed in claim 14, which is characterized in that third dielectric layer includes nano-pore.
17. light-emitting device as claimed in claim 16, which is characterized in that the density for the nano-pore that third dielectric layer includes is
The aperture of 10% to 80% either nano-pore is 5~100nm or the aperture of nano-pore is 10 to 20nm.
18. light-emitting device as claimed in claim 17, which is characterized in that the first refractive index of first medium layer be 0 to
The first refractive index of 2.5nm or first medium layer is 1.5~2.
19. light-emitting device as claimed in claim 16, which is characterized in that formed in third dielectric layer by chemical etching
Nano-pore.
20. light-emitting device as claimed in claim 19, which is characterized in that the light-emitting device further include in gallium nitride substrate and
Conductive layer between first catoptric arrangement and separation layer, wherein
Conductive layer is on gallium nitride substrate, to be used as in the chemical etching of the nano-pore in being used to form first medium layer
Transmit the medium of electronics；
Separation layer is on the electrically conductive and between conductive layer and the first catoptric arrangement, in being used to form first medium layer
Conductive layer and solvent used by chemical etching are kept apart in the chemical etching of nano-pore.
21. a kind of manufacturing method of light-emitting device, which is characterized in that the method includes：
Include the semi-polarity gallium nitride grown along semi-polarity crystalline phase gallium nitride substrate on form the first catoptric arrangement；
Light emitting structure is formed on the first catoptric arrangement；
The second catoptric arrangement is formed on light emitting structure.
22. method as claimed in claim 21, which is characterized in that gallium nitride substrate includes along semi-polarity crystalline phase (2021) it grows
Semi-polarity gallium nitride.
23. light-emitting device as claimed in claim 22, which is characterized in that the quantity of the fault of gallium nitride substrate is 0.
24. method as claimed in claim 21, which is characterized in that formed the first catoptric arrangement the step of include：
Formation includes the first distributed Blatt reflective structure of multiple first medium layers pair on gallium nitride substrate, wherein first
Dielectric layer to include have the first medium layer of first refractive index and with second refractive index different from first refractive index
Second medium layer, first medium layer are formed on gallium nitride substrate or are formed in second dielectric layer, and second dielectric layer is formed in
On one dielectric layer.
25. method as claimed in claim 24, which is characterized in that the method further includes：
Nano-pore is formed in first medium layer.
26. method as claimed in claim 25, which is characterized in that form receiving in first medium layer by chemical etching
Metre hole, wherein before the step of forming the first catoptric arrangement, the method further includes：
Conductive layer is formed on gallium nitride substrate, and forms separation layer on the electrically conductive, wherein in chemical etching, will be led
Electric layer is used as the medium of transmission electronics, and is kept apart conductive layer and solvent used by chemical etching by separation layer.
27. method as claimed in claim 21, which is characterized in that formed light emitting structure the step of include：
Active layer is formed on the first catoptric arrangement；
Electronic barrier layer is formed on active layer；
Tunnel junction layer is formed on electronic barrier layer.
28. method as claimed in claim 21, which is characterized in that formed the second catoptric arrangement the step of include：
Formation includes the second distributed Blatt reflective structure of multiple second dielectric layer pair on light emitting structure, wherein second is situated between
Matter layer to include have the third dielectric layer of third reflect rate and with the fourth refractive index different from third reflect rate the 4th
Dielectric layer, third dielectric layer are formed on light emitting structure or are formed on the 4th dielectric layer, and the 4th dielectric layer is formed in third Jie
On matter layer.
29. method as claimed in claim 28, which is characterized in that the method further includes：
Nano-pore is formed in third dielectric layer.
30. method as claimed in claim 29, which is characterized in that form receiving in third dielectric layer by chemical etching
Metre hole, wherein before the step of forming the first catoptric arrangement, the method further includes：
Conductive layer is formed on gallium nitride substrate, and forms separation layer on the electrically conductive, wherein in chemical etching, will be led
Electric layer is used as the medium of transmission electronics, and is kept apart conductive layer and solvent used by chemical etching by separation layer.
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| CN109830583A (en) * | 2019-01-31 | 2019-05-31 | 西安工程大学 | A kind of preparation method of the blue light-emitting diode with GaN/ lar nanometric cavities |
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