CN108369973A - 用于基于箔的太阳能电池金属化的含金属的热扩散阻挡层 - Google Patents

用于基于箔的太阳能电池金属化的含金属的热扩散阻挡层 Download PDF

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CN108369973A
CN108369973A CN201680074391.9A CN201680074391A CN108369973A CN 108369973 A CN108369973 A CN 108369973A CN 201680074391 A CN201680074391 A CN 201680074391A CN 108369973 A CN108369973 A CN 108369973A
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layer
metal
aluminium
foil
solar cell
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CN108369973B (zh
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金泰锡
罗伯特·韦尔
加布里埃尔·哈利
尼尔斯-彼得·哈德
延斯-德克·莫施纳
马蒂厄·穆尔斯
米歇尔·阿尔塞纳·恩加姆·托科
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TotalEnergies Marketing Services SA
SunPower Corp
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SunPower Corp
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Abstract

本发明描述了在基于箔的金属化方法中使用含金属的热扩散阻挡层来制造太阳能电池的方法，以及所制得的太阳能电池。例如，制造太阳能电池的方法包括在基板中或上方形成多个半导体区域。该方法还包括在多个半导体区域上方形成含金属的热扩散阻挡层。该方法还包括在含金属的热扩散阻挡层上形成金属晶种层。该方法还包括在金属晶种层上形成金属导体层。该方法还包括将金属导体层激光焊接至金属晶种层。在激光焊接过程中，含金属的热扩散阻挡层保护多个半导体区域。

Description

用于基于箔的太阳能电池金属化的含金属的热扩散阻挡层
技术领域
本公开的实施例属于可再生能源领域，并且具体地包括在基于箔的金属化方法中使用含金属的热扩散阻挡层来制造太阳能电池的方法，以及所制得的太阳能电池。
背景技术
光伏电池(常被称为太阳能电池)是熟知的用于将太阳辐射直接转换为电能的装置。一般来讲，使用半导体加工技术在半导体基板的表面附近形成p-n结，从而在半导体晶圆或基板上制造太阳能电池。照射在基板表面上并进入基板内的太阳辐射在基板块体中形成电子和空穴对。所述电子和空穴对迁移至基板中的p掺杂区域和n掺杂区域，从而在掺杂区域之间产生电压差。将掺杂区域连接至太阳能电池上的导电区域，以将电流从电池引导至与其耦接的外部电路。
效率是太阳能电池的重要特性，因其直接与太阳能电池发电能力有关。同样，制备太阳能电池的效率直接与此类太阳能电池的成本效益有关。因此，提高太阳能电池效率的技术或提高制造太阳能电池效率的技术是普遍需要的。本公开的一些实施例允许通过提供用于制造太阳能电池结构的新工艺而提高太阳能电池的制造效率。
附图说明
图1为根据本公开实施例的流程图，所述流程图列出与图2A-2F相对应的制造太阳能电池之方法中的操作。
图2A-2F示出根据本公开实施例的太阳能电池制造中之各个阶段的剖视图。
图3为根据本公开实施例的流程图，所述流程图列出制造太阳能电池之另一方法中的操作。
图4A-4C示出根据本公开实施例采用基于箔的金属化之太阳能电池制造中各个阶段的成角度视图。
图5A-5C示出根据本公开实施例采用基于箔的金属化之太阳能电池制造中各个阶段的剖视图。
具体实施方式
本以下具体实施方式本质上只是例证性的，并非意图限制所述主题的实施例或此类实施例的应用和用途。如本文所用，词语“示例性”意指“用作示例、实例或举例说明”。本文描述为示例性的任何实现方式未必理解为相比其他实现方式是优选的或有利的。此外，并不意图受前述技术领域、背景技术、发明内容或以下具体实施方式中提出的任何明示或暗示性理论的约束。
本说明书包括提及“一个实施例”或“某个实施例”。短语“在一个实施例中”或“在某个实施例中”的出现不一定是指同一实施例。特定的特征、结构或特性可能以任何与本公开一致的合适方式加以组合。
术语。以下段落提供存在于本公开(包括所附权利要求书)中术语的定义和/或语境：
“包括”。本术语是开放式的。如在所附权利要求书中所用，本术语并不排除其他结构或步骤。
“配置为”。可将各个单元或部件描述或声明成“配置为”执行一项或多项任务。在此类语境下，“配置为”用于暗示结构，方式是指示所述单元/部件包括在操作期间执行一项或多项那些任务的结构。因此，可以说是将所述单元/部件配置为即使当指定的单元/部件目前不在操作(例如，未开启/激活)时也可执行任务。详述某一单元/电路/部件“配置为”执行一项或多项任务明确地意在对该单元/部件而言不援引35 U.S.C.§112第六段。
“第一”、“第二”等。如本文所用，这些术语用作其之后名词的标记，而并不暗示任何类型的顺序(例如，空间、时间和逻辑等)。例如，提及“第一”太阳能电池并不一定暗示此太阳能电池为某一序列中的第一个太阳能电池；相反，术语“第一”用于区分此太阳能电池与另一个太阳能电池(例如，“第二”太阳能电池)。
“耦接”-以下描述是指元件或节点或特征被“耦接”在一起。如本文所用，除非另外明确指明，否则“耦接”意指一个元件/节点/特征直接或间接连接至另一个元件/节点/特征(或直接或间接与其连通)，并且不一定是机械连接。
此外，以下描述中还仅为了参考的目的使用了某些术语，因此这些术语并非意图进行限制。例如，诸如“上部”、“下部”、“上方”和“下方”之类的术语是指附图中提供参考的方向。诸如“正面”、“背面”、“后面”、“侧面”、“外侧”和“内侧”之类的术语描述部件的某些部分在一致但任意的参照系内的取向和/或位置，通过参考描述所讨论部件的文字和相关的附图可以清楚地了解所述取向和/或位置。此类术语可包括上面具体提及的词语、它们的衍生词语以及类似意义的词语。
“阻止”-如本文所用，阻止用于描述减小影响或使影响降至最低。当部件或特征被描述为阻止行为、运动或条件时，它可能完全防止某种结果或后果或未来的状态。另外，“阻止”还可以指减少或减小可能会发生的某种后果、性能和/或效应。因此，当部件、元件或特征被称为阻止某结果或状态时，它不一定完全防止或消除该结果或状态。
本文描述了在基于箔的金属化方法中使用含金属的热扩散阻挡层来制造太阳能电池的方法，以及所制得的太阳能电池。在下面的描述中，阐述了诸如具体的工艺流程操作等许多具体细节，以便提供对本公开实施例的透彻理解。对本领域的技术人员将显而易见的是，可在没有这些具体细节的情况下实践本公开的实施例。在其他情况中，没有详细地描述熟知的制造技术，诸如发射极区域制造技术，以避免不必要地使本公开的实施例难以理解。此外，应当理解在图中示出的多种实施例是示例性的展示并且未必按比例绘制。
本文公开了制造太阳能电池的方法。在一个实施例中，制造太阳能电池的方法包括在基板中或上方形成多个半导体区域。该方法还包括在多个半导体区域上方形成含金属的热扩散阻挡层。该方法还包括在含金属的热扩散阻挡层上形成金属晶种层。该方法还包括在金属晶种层上形成金属导体层。该方法还包括将金属导体层激光焊接至金属晶种层。在激光焊接过程中，含金属的热扩散阻挡层保护多个半导体区域。
在另一实施例中，一种制造太阳能电池的方法包括在薄介电层上形成多个交替的N型多晶硅区域和P型多晶硅区域，所述薄介电层在单晶硅基板上形成。该方法还包括在交替的N型多晶硅区域和P型多晶硅区域上方形成含非铝金属层；该方法还包括在含非铝金属层上形成铝晶种层；该方法还包括在铝晶种层上形成铝箔。该方法还包括将铝箔激光焊接至铝晶种层。含非铝金属层在激光焊接期间保护交替的N型多晶硅区域和P型多晶硅区域。
本文还公开了太阳能电池。在实施例中，太阳能电池包括单晶硅基板。将多个交替的N型多晶硅区域和P型多晶硅区域设置于薄介电层上，所述薄介电层设置于单晶硅基板上。将含非铝金属层设置于交替的N型多晶硅区域和P型多晶硅区域上方。将铝晶种层设置于含非铝金属层上。将铝箔部分设置于铝晶种层上并点焊至铝晶种层。
本文所描述的一个或多个实施例提供用于太阳能电池之金属化的热扩散阻挡层。在一个实施例中，在通过图案化使用激光工艺键合于电池上的金属箔以对太阳能电池进行金属化的情境中，此类热扩散阻挡层保护电池的含硅部分免受激光的热量影响以及免于随之而来的变化，诸如箔的金属扩散到硅中。另外，由于该层的机械性质，纳入此类热扩散阻挡层可以改善电池的鲁棒性。进一步的优点可以包括由于金属化工艺的简化而降低制造太阳能电池的成本。
为了提供情境，使用激光将金属箔焊接至下方电池的最先进金属化工艺会在最终装置上引起严重损坏。例如，当激光焊接落于激光接触区之直接加热装置的顶部上时，在此区域硅和第一级金属有直接接触，因此可能发生严重的寿命损害。可以实现以交替方式定位激光焊接点(或线)和激光接触点以避免这种损害。然而，这种定位可能要求激光扫描系统的进一步复杂性，其中晶圆和激光系统之间的任何错位都可能导致设备故障。
根据本公开的实施例，解决一个或多个上述问题的材料对激光的热量和由激光的热量而增强的金属扩散是惰性的及/或对其更耐受，所述材料包括在太阳能电池的材料堆叠中。该材料可以通过物理或化学气相沉积，例如通过反应溅射或RF/DC溅射来沉积。可以实现合成气体退火以在沉积过程中稳定沉积层并使之更牢固。在本文所描述的一个或多个实施例中，将层称为含金属的热扩散阻挡层。
在示例性工艺流程中，图2A-2F示出根据本公开实施例的太阳能电池制造中各个阶段的剖视图。图1为根据本公开实施例的流程图100，该流程图列出与图2A-2F相对应的制造太阳能电池之方法中的操作。
参照流程图100的操作102和对应的图2A，制造太阳能电池的方法包括在基板200上方形成多个半导体区域202/204。可以掺入薄介电材料206作为半导体区域202/204与基板200之间的居间材料。基板200具有与其上方形成有多个半导体区域202/204的背面相对的光接收表面201。在一个实施例中，如图2A所示，多个半导体区域202/204中的各半导体区域彼此隔开。在具体实施例中，多个半导体区域202/204是多个交替的N型202半导体区域和P型204半导体区域。
在一个实施例中，基板200为单晶硅基板，诸如块体单晶N型掺杂硅基板。然而，应当理解，基板200可以是设置在整个太阳能电池基板上的层，诸如多晶硅层。在一个实施例中，薄介电层206为厚约2纳米或更小厚度的隧穿氧化硅层。在一个此类实施例中，术语“隧穿介电层”是指非常薄的介电层，通过该介电层可实现电传导。传导可由于量子隧穿和/或通过介电层中薄点的直接物理连接之较小区域的存在而造成。在一个实施例中，隧穿介电层为薄氧化硅层或包括薄氧化硅层。
在一个实施例中，在多个半导体区域202/204是多个交替的N型202半导体区域和P型204半导体区域的情况下，交替的N型半导体区域202和P型半导体区域204，各自为通过例如使用等离子体增强化学气相沉积(PECVD)工艺形成的多晶硅区域。在一个此类实施例中，N型多晶硅区域202被掺杂有N型杂质，诸如磷。P型多晶硅区域204被掺杂有P型杂质，诸如硼。如图2A所示，交替的N型半导体区域202和P型半导体区域204可具有形成于两者之间的沟槽208，所述沟槽208部分延伸到基板200中。在一个实施例中，如图2A中所示，绝缘层210设置于沟槽208中，并且设置于交替的N型半导体区域202和P型半导体区域204之间并部分地设置于所述区域之上。
在一个实施例中，光接收表面201是纹理化的光接收表面，如图2A所示。在一个实施例中，采用基于氢氧化物的湿式蚀刻剂对基板200的光接收表面201进行纹理化处理，并且也可能对沟槽208表面进行纹理化处理，同样如图2A所示。应当理解，将光接收表面纹理化的时间安排可以变化。例如，可在薄介电层206形成之前或之后进行纹理化处理。在一个实施例中，纹理化表面可为具有规则或不规则形状的表面，该表面用于散射入射光，从而减少从太阳能电池的光接收表面201反射离开的光量。再次参照图2A，附加实施例可包括在光接收表面201上形成钝化层和/或抗反射涂层(ARC)(共同示为层212)。应当理解，形成钝化层和/或ARC层的时间安排可以变化。
在一个实施例中，如上所述，多个半导体区域202/204由形成在基板200上方的多晶硅层形成，所述基板200可以是单晶硅基板。然而，在另一个实施例中，基板200为单晶硅基板，其具有形成于基板之中的多个半导体区域202/204，与在不同于基板200的半导体层中形成的区域相对。
参照流程图100的操作104和对应的图2C，制造太阳能电池的方法还包括在多个半导体区域202/204上方形成含金属的热扩散阻挡层216。
在一个实施例中，含金属的热扩散阻挡层216是材料层，例如但不限于氮化钛(TiN)层、钨钛(TiW)层或氮化钽(TaN)层。在一个实施例中，含金属的热扩散阻挡层216是通过化学气相沉积或物理气相沉积形成的厚度在大约30-500纳米范围内的材料层。
现在参照图2B和2C，在一个实施例中，在形成含金属的热扩散阻挡层216之前，于多个半导体区域202/204上形成反射层214。在反射层214上形成含金属的热扩散阻挡层216。
在一个实施例中，反射层214被定义为表现出几乎不吸收光并且具有比半导体区域202/204折射率低的层。在一个实施例中，反射层214包括厚度在大约20-100纳米范围内的铝层。在特定实施例中，多个半导体区域202/204是形成于基板200上方的多个硅区域，并且反射层214包括铝层，该铝层具有少于与多个硅区域202/204形成共晶混合物所需的铝量。
参照流程图100的操作106和相应的图2D，制造太阳能电池的方法还包括在含金属的热扩散阻挡层216上形成金属晶种层218。在一个实施例中，金属晶种层218包括厚度在大约0.05至20微米范围内的层，并且包含含量大于约90原子％的铝。在一个实施例中，金属晶种层218沉积为毯覆层，其随后会经图案化。在另一个实施例中，金属晶种层218沉积为图案化层。在一个此类实施例中，通过印刷图案化的金属晶种层来沉积图案化的金属晶种层。
参照流程图100的操作108并再次参照对应的图2D，制造太阳能电池的方法还包括在金属晶种层218上形成金属导体层220。在一个实施例中，金属晶种层218包括厚度在大约0.05至20微米范围内的层。在一个此类实施例中，金属晶种层218包括含量大于约90原子％的铝。在具体的此类实施例中，金属导体层220包括铝。在一个实施例中，金属晶种层218包括含量大于约90原子％的铝。
在一个实施例中，金属导体层220是形成于金属晶种层218上的金属箔，如图2D所示。在一个此类实施例中，所述金属箔是厚度大约在5-100微米范围内的铝(Al)箔。在一个实施例中，Al箔为包含铝和第二元素(诸如但不限于铜、锰、硅、镁、锌、锡、锂或它们的组合)的铝合金箔。在一个实施例中，Al箔为回火级(temper grade)箔，诸如但不限于F级(自由状态)、O级(全软)、H级(应变硬化)或T级(热处理)。在一个实施例中，铝箔为阳极氧化铝箔。
在另一个实施例中，金属导体层220是形成于金属晶种层218上的金属丝。在一个此类实施例中，所述金属丝是铝(Al)或铜(Cu)丝。
参照流程图100的操作110及对应的图2E，制造太阳能电池的方法还包括激光焊接222，该操作将金属导体层220焊接至金属晶种层218。在一个此类实施例中，如图2E所示，形成焊接区域224。在一个实施例中，在激光焊接222过程中，含金属的热扩散阻挡层216保护多个半导体区域202/204。
参考图2F，在一个实施例中，制造太阳能电池的方法进一步包括，在将金属箔220激光焊接222到金属种子层218之后，图案化金属箔222，例如，以形成图案化的金属箔区域220’，如图2F所示。然而，在另一个实施例中，在将金属箔220激光焊接222到金属种子层218之前对金属箔220进行图案化。
在一个实施例中，图案化金属箔220涉及在与多个半导体区域202/204之间位置对齐的区域处仅激光烧蚀穿透金属箔220的一部分，并且在激光烧蚀之后，对剩余金属箔进行蚀刻以隔离与多个半导体区域202/204对齐的剩余金属箔的区域，结合图5A-5C，如下有更详细描述。在另一个实施例中，图案化金属箔220涉及在与多个半导体区域202/204之间位置对齐的区域处仅激光烧蚀穿透金属箔220的一部分，并且在激光烧蚀之后，阳极氧化金属箔以隔离与多个半导体区域202/204对齐的剩余金属箔的区域，结合图5A-5C，如下也有更详细描述。
在一个实施例中，在金属晶种层218上形成金属导体层220之前，未将金属晶种层218和含金属的热扩散阻挡层216图案化。对金属晶种层218和含金属的热扩散阻挡层216进行图案化，实质上同时图案化金属箔220、形成图案化的金属晶种层218’和图案化的含金属的热扩散阻挡层216(以及图案化的反射层214’，如果存在)，如图2F所示。然而，在另一个实施例中，在金属晶种层218上形成金属导体层220之前，对金属晶种层218和含金属的热扩散阻挡层216进行图案化，结合图5A-5C，其一个实例在下面有更详细描述。
太阳能电池可根据上述方法制造。再次参照图2F，在一个示例性的实施例中，太阳能电池250包括单晶硅基板200。在薄介电层上设置多个交替的N型202多晶硅区域和P型204多晶硅区域，所述薄介电层206设置于单晶硅基板200上。在交替的N型202多晶硅区域和P型204多晶硅区域上方设置含非铝金属层216’。在含非铝金属层216’上设置铝晶种层218’。将铝箔部分220’设置于铝晶种层218’上并点焊224至所述层，为交替的N型202多晶硅区域和P型204多晶硅区域提供电接触结构。
再次参照图2F，在一个实施例中，太阳能电池250进一步包括设置于交替的N型202多晶硅区域和P型204多晶硅区域上的薄铝层214’。含非铝金属层216’设置于薄铝层214’之上。在一个此类实施例中，薄铝层214’具有少于与所述多个交替的N型202多晶硅区域和P型206多晶硅区域形成共晶混合物所需的铝量。在一个实施例中，薄铝层214’是厚度大约在20-100纳米范围内的铝层。
在一个实施例中，含非铝金属层216’是一个层，诸如但不限于氮化钛(TiN)层、钨钛(TiW)层或氮化钽(TaN)层。在一个实施例中，铝晶种层216’具有大约在0.05至20微米范围内的厚度并包含含量大于约90原子％的铝。在一个实施例中，沟槽208设置于交替的N型202多晶硅区域和P型204多晶硅区域的彼此之间并且部分地延伸到单晶硅基板200中，如图2F所示。
应该认识到，流程图100的方法一般性地描述关于为太阳能电池形成的半导体区域的类型。在一个更具体的示例性处理工艺方案中，图3为根据本公开实施例的流程图300，该流程图列出制造太阳能电池的另一方法中的操作。
参照流程图300的操作302，一种制造太阳能电池的方法包括在薄介电层上形成多个交替的N型多晶硅区域和P型多晶硅区域，所述薄介电层形成于单晶硅基板之上。
参照流程图300的操作304，制造太阳能电池的方法还包括在交替的N型多晶硅区域和P型多晶硅区域上方形成含非铝金属层。
在一个实施例中，在形成含非铝金属层之前，该方法还包括在交替的N型多晶硅区域和P型多晶硅区域上形成薄铝层。在薄铝层上形成含非铝金属层。在一个此类实施例中，薄铝层是一个铝层，该铝层具有少于与多个交替的N型多晶硅区域和P型多晶硅区域形成共晶混合物所需的铝量。在一个实施例中，薄铝层是厚度大约在20-100纳米范围内的铝层。在一个实施例中，含非铝金属层是一个层，诸如但不限于氮化钛(TiN)层、钨钛(TiW)层或氮化钽(TaN)层。
参照流程图300的操作306，制造太阳能电池的方法还包括在含非铝金属层上形成铝晶种层。在一个实施例中，铝晶种层为具有大约在0.05至20微米范围内的厚度且包含含量大于约90原子％的铝的层。
参照流程图300的操作308，制造太阳能电池的方法还包括在铝晶种层上形成铝箔。
参照流程图300的操作310，制造太阳能电池的方法还包括将铝箔激光焊接至铝晶种层。含非铝金属层在激光焊接期间保护交替的N型多晶硅区域和P型多晶硅区域。在一个实施例中，在将铝箔激光焊接至铝晶种层之前或之后对铝箔进行图案化。
如上所述，在一个实施例中，用于为太阳能电池制造电接触的最终金属化层是金属箔层，如铝金属箔。在一个示例性处理工艺方案中，图4A-4C示出根据本公开实施例采用基于箔的金属化之太阳能电池制造中各个阶段的成角度视图。
参照图4A和4B，将金属箔408布置在晶圆402的金属化表面上，晶圆402具有设置在基板406之上或上方的多个区域404。在一个实施例中，多个区域404包括交替的N型半导体区域和P型半导体区域、每一个交替的N型半导体区域和P型半导体区域上方的毯覆晶种层或多个金属晶种材料区域两者任一，以及毯覆含金属的热扩散阻挡层或多个含金属热扩散阻挡区域两者任一。在一个实施例中，金属箔408为厚度大约在5-100微米范围内的铝(Al)箔。在一个实施例中，Al箔为包含铝和第二元素(诸如但不限于铜、锰、硅、镁、锌、锡、锂或它们的组合)的铝合金箔。在一个实施例中，Al箔为回火级(temper grade)箔，诸如但不限于F级(自由状态)、O级(全软)、H级(应变硬化)或T级(热处理)。在一个实施例中，铝箔为阳极氧化铝箔。金属箔408被定位在或装在晶圆402的金属化表面上，如图4B所示。
参见图4C，多个焊点414形成于金属箔408与晶圆402的金属化表面之间。在一个实施例中，焊点414通过激光工艺412形成，如图4C所示。在一个实施例中，在激光处理412过程中，含金属的热扩散阻挡层保护下方半导体区域。
在一个实施例中，在连接金属箔408和基板402时，金属箔408具有的表面积远远大于太阳能电池的晶圆402的表面积。在一个此类实施例中，在使金属箔408与晶圆402的金属化表面电接触之后，切割金属箔以提供金属箔408，所述金属箔408具有的表面积基本上等于太阳能电池之晶圆402的表面积。然而，在另一个实施例中，在将金属箔408布置于太阳能电池之晶圆402的金属化表面上之前，切割大片箔以提供金属箔408，所述金属箔408具有的表面积基本上等于太阳能电池之晶圆402的表面积，如图4A所示。
最终可以将金属箔图案化以提供用于太阳能电池之下方半导体区域的图案化电接触。可在已图案化的其他材料区域上方进行金属箔的图案化。例如，图5A-5C示出根据本公开实施例采用基于箔的金属化之太阳能电池制造中各个阶段的剖视图。
参照图5A，基板500上方设置有在薄介电材料502上设置的N型半导体区域504和P型半导体区域506，所述薄介电材料502作为N型半导体区域504或P型半导体区域506各自与基板500之间的居间材料。基板500具有与背表面相对的光接收表面501，N型半导体区域504和P型半导体区域506在所述背表面上方形成。
在一个实施例中，基板500为单晶硅基板，诸如块体单晶N型掺杂硅基板。然而，应当理解，基板500可以是设置在整个太阳能电池基板上的层，诸如多晶硅层。在一个实施例中，薄介电层502为厚约2纳米或更小厚度的隧穿氧化硅层。在一个此类实施例中，术语“隧穿介电层”是指非常薄的介电层，通过该介电层可实现电传导。传导可由于量子隧穿和/或通过介电层中薄点的直接物理连接之较小区域的存在而造成。在一个实施例中，隧穿介电层为薄氧化硅层或包括薄氧化硅层。
在一个实施例中，交替的N型半导体区域504和P型半导体区域506各自由多晶硅形成，该多晶硅通过例如采用等离子体增强化学气相沉积(PECVD)工艺形成。在一个此类实施例中，N型多晶硅发射极区域504掺有N型杂质，诸如磷。P型多晶硅发射极区域506掺有P型杂质，诸如硼。如图5A所示，交替的N型半导体区域504和P型半导体区域506可具有形成于两者之间的沟槽508，所述沟槽508部分延伸到基板500中。另外，在一个实施例中，在交替的N型半导体区域504和P型半导体区域506上形成底部抗反射涂层(BARC)材料510或其他保护层(如非晶硅层)，如图5A所示。
在一个实施例中，光接收表面501是纹理化的光接收表面，如图5A所示。在一个实施例中，采用基于氢氧化物的湿式蚀刻剂对基板500的光接收表面501进行纹理化处理，并且也可能对沟槽508表面进行纹理化处理，同样如图5A所示。应当理解，将光接收表面纹理化的时间安排可以变化。例如，可在薄介电层502形成之前或之后进行纹理化处理。在一个实施例中，纹理化表面可为具有规则或不规则形状的表面，该表面用于散射入射光，从而减少从太阳能电池的光接收表面501反射离开的光量。再次参照图5A，附加实施例可包括在光接收表面501上形成钝化层和/或抗反射涂层(ARC)(共同示为层512)。应当理解，形成钝化层和/或ARC层的时间安排可以变化。
再次参照图5A，形成并图案化多个材料区域514以在每一个交替的N型半导体区域504和P型半导体区域506上提供居间接触层。在一个实施例中，每一个材料区域均包括图案化的反射层574，诸如结合图2F于上文所述的图案化的反射层214’。在图案化的反射层574上形成图案化的含金属的热扩散阻挡层576，诸如结合图2F于上文所述的图案化的含金属的热扩散阻挡层216’。在图案化的含金属的热扩散阻挡层576上形成图案化的金属晶种层578，诸如结合图2F于上文所述的图案化的金属晶种层218’。
再次参照图5A，将金属箔518粘附至交替的N型半导体区域504和P型半导体区域506，即，通过与材料区域514耦接。金属箔518可按照结合图4A-4C所述的方式定位在或装在基板500上。在一个实施例中，通过使金属箔518的部分与每一个金属晶种材料区域578的对应部分直接耦接，将金属箔518粘附至交替的N型半导体区域504和P型半导体区域506。在一个此类实施例中，将金属箔518的部分与对应的材料514直接耦接涉及在每一个此类位置处形成金属焊接520，如图5A所示。
在一个此类实施例中，金属箔518为厚度大约在5-100微米范围内的铝(Al)箔。在一个实施例中，Al箔为包含铝和第二元素(诸如但不限于铜、锰、硅、镁、锌、锡、锂或它们的组合)的铝合金箔。在一个实施例中，Al箔为回火级(temper grade)箔，诸如但不限于F级(自由状态)、O级(全软)、H级(应变硬化)或T级(热处理)。在一个实施例中，铝箔为阳极氧化铝箔。在一个实施例中，通过使用诸如但不限于激光焊接工艺、热压缩工艺或超声波键合工艺等技术，将金属箔518直接粘附至金属晶种材料578。
参照图5B，凹槽或压痕530形成于与交替的N型半导体区域504和P型半导体区域506之间位置相对应的区域处的金属箔518中，例如沟槽508位置上方。在一个实施例中，凹槽或压痕530形成为仅穿透金属箔518的一部分，即部分延伸到金属箔518中而非完全穿透金属箔518，如图5B所示。在一个实施例中，使凹槽或压痕530形成至一定深度，该深度大约在金属箔518的总厚度之75％-90％范围内。导电区域540保留在凹槽或压痕530的彼此之间。在一个实施例中，形貌530为通过激光划线工艺形成的凹槽。在另一个实施例中，形貌530为通过机械图案化工艺形成的压痕。
参照图5C，在形成多个凹槽或压痕530之后，将与交替的N型504半导体区域和P型506半导体区域对应的剩余金属箔518的区域540隔离。即，图5B的凹槽或压痕530用于将导电区域540隔离为用于太阳能电池之下方半导体区域的金属化结构。例如，参照图5C，将凹槽或压痕530延伸以在导电区域540之间提供间隙532。在一个实施例中，对图案化的金属箔518进行蚀刻以隔离金属箔518的部分540。在一个此类实施例中，图5B的结构被暴露于湿式蚀刻剂。尽管湿式蚀刻剂蚀刻金属箔518的全部暴露部分，但是采用精确定时的蚀刻工艺可在不显著减少金属箔518之非压痕区域540厚度的情况下穿透凹槽或压痕530的底部，如图5C所示。在一个具体实施例中，使用基于氢氧化物的蚀刻剂，诸如但不限于氢氧化钠、氢氧化钾(KOH)或四甲基氢氧化铵(TMAH)。
在另一个实施例中(未示出)，随后在图5B的剩余金属箔518的暴露表面上对其进行阳极化处理，以隔离剩余金属箔518中与交替的N型半导体区域504和P型半导体区域506相对应的区域540。具体地，对金属箔518的暴露表面(包括凹槽或压痕530的表面)进行阳极化处理以形成氧化涂层。在与交替的N型半导体区域504和P型半导体区域506相对应的位置处，例如在沟槽508上方位置处的压痕530中，对金属箔518的整个剩余厚度进行阳极化处理，以隔离金属箔518在每一个N型半导体区域504和P型半导体区域506上方剩余的区域540。
虽然参考上述实施例具体描述了某些材料，但是在此类实施例中，可用其他材料来方便地取代其中的一些材料，此类实施例仍然在本公开实施例的精神和范围内。例如，在一个实施例中，可使用不同材料的基板，诸如III-V族材料的基板，来代替硅基板。此外，应当理解，在针对太阳能电池背表面上的发射极区域具体描述N+型和随后P+型掺杂的顺序的情况下，设想的其他实施例包括相反的导电类型顺序，分别为例如P+型和随后N+型掺杂。另外，虽然主要提及后接触太阳能电池布置，但应当理解，本文所述的方法也可应用于前接触电极太阳能电池。在其他实施例中，上述方法可适用于太阳能电池以外的制造。例如，发光二极管(LED)的制造可受益于本文所述的方法。
因此，本发明公开了在基于箔的金属化方法中使用含金属的热扩散阻挡层来制造太阳能电池的方法，以及所制得的太阳能电池。
尽管上面已经描述了具体实施例，但即使相对于特定的特征仅描述了单一实施例，这些实施例也并非旨在限制本公开的范围。除非另有说明，否则本公开中所提供特征的示例旨在为例证性的而非限制性的。以上描述旨在涵盖将对本领域的技术人员显而易见的具有本公开之有益效果的那些替代形式、修改形式和等效形式。
本公开的范围包括本文所公开的任何特征或特征组合(明示或暗示)，或其任何概括，不管它是否减轻本文所解决的任何或全部问题。因此，可以在本申请(或要求其优先权的申请)的审查过程期间针对任何此类特征组合提出新的权利要求。具体地，参考所附权利要求书，来自从属权利要求的特征可与独立权利要求的那些特征相结合，来自相应独立权利要求的特征可以按任何适当的方式组合，而并非只是以所附权利要求中枚举的特定形式组合。

Claims (34)

1.一种制造太阳能电池的方法，所述方法包括：
在基板内部或上方形成多个半导体区域；
在所述多个半导体区域上方形成含金属的热扩散阻挡层；
在所述含金属的热扩散阻挡层上形成金属晶种层；
在所述金属晶种层上形成金属导体层；以及
将所述金属导体层激光焊接至所述金属晶种层，其中，在激光焊接期间，所述含金属的热扩散阻挡层保护所述多个半导体区域。
2.根据权利要求1所述的方法，还包括：
在形成所述含金属的热扩散阻挡层之前，在所述多个半导体区域上形成反射层，其中该含金属的热扩散阻挡层形成于所述反射层之上。
3.根据权利要求1所述的方法，其中在所述金属晶种层上形成所述金属导体层包括在所述金属晶种层上形成金属箔。
4.根据权利要求3所述的方法，还包括：
在将所述金属箔激光焊接至所述金属晶种层之后，图案化所述金属箔。
5.根据权利要求3所述的方法，还包括：
在将所述金属箔激光焊接至所述金属晶种层之前，图案化所述金属箔。
6.根据权利要求3所述的方法，其中图案化所述金属箔包括：
在与所述多个半导体区域之间位置对齐的区域处仅激光烧蚀穿透所述金属箔的一部分；以及
在激光烧蚀之后，蚀刻剩余的金属箔以隔离与所述多个半导体区域对齐的剩余金属箔的区域。
7.根据权利要求3所述的方法，其中图案化所述金属箔包括：
在与所述多个半导体区域之间位置对齐的区域处仅激光烧蚀穿透所述金属箔的一部分；以及
在激光烧蚀之后，阳极氧化所述金属箔以隔离与所述多个半导体区域对齐的剩余金属箔的区域。
8.根据权利要求3所述的方法，其中，在所述金属晶种层上形成所述金属导体层之前，未将所述金属晶种层和所述含金属的热扩散阻挡层图案化，所述方法还包括：
基本上在图案化所述金属箔的同时，图案化所述金属晶种层和所述含金属的热扩散阻挡层。
9.根据权利要求1所述的方法，其中，在所述金属晶种层上形成所述金属导体层之前，图案化所述金属晶种层和所述含金属的热扩散阻挡层。
10.根据权利要求1所述的方法，其中在所述金属晶种层上形成所述金属导体层包括在所述金属晶种层上形成金属丝。
11.根据权利要求1所述的方法，其中形成所述多个半导体区域包括由形成于所述基板上方的多晶硅层形成所述多个半导体区域，所述方法还包括：
在所述多个半导体区域的彼此之间形成沟槽，并且所述沟槽部分地延伸至所述基板中。
12.根据权利要求1所述的方法，其中所述基板为单晶硅基板，并且其中形成所述多个半导体区域包括在所述单晶硅基板内形成所述多个半导体区域。
13.根据权利要求1所述的方法，其中形成所述金属晶种层包括形成厚度在大约0.05至20微米范围内并包含含量大于约90原子％的铝的层，并且其中所述金属导体层包含铝。
14.根据权利要求1所述的方法，其中形成所述含金属的热扩散阻挡层包括形成材料层，所述材料层选自由氮化钛(TiN)层、钨钛(TiW)层和氮化钽(TaN)层构成的组。
15.根据权利要求1所述的方法，其中形成所述含金属的热扩散阻挡层包括通过化学气相沉积或物理气相沉积形成材料层，并且该材料层的厚度大约在30-500纳米范围内。
16.根据权利要求2所述的方法，其中形成所述反射层包括形成厚度在大约20-100纳米范围内的铝层。
17.根据权利要求2所述的方法，其中形成所述多个半导体区域包括在所述基板上方形成多个硅区域，并且其中形成所述反射层包括形成这样的铝层，所述铝层具有少于与所述多个硅区域形成共晶混合物所需的铝量。
18.根据权利要求1所述的方法，其中形成所述多个半导体区域包括形成多个交替的N型半导体区域和P型半导体区域。
19.一种根据权利要求1所述的方法制造的太阳能电池。
20.一种制造太阳能电池的方法，所述方法包括：
在薄介电层上形成多个交替的N型多晶硅区域和P型多晶硅区域，所述薄介电层形成在单晶硅基板上；
在交替的N型多晶硅区域和P型多晶硅区域上方形成含非铝金属层；
在所述含非铝金属层上形成铝晶种层；
在所述铝晶种层上形成铝箔；以及
将所述铝箔激光焊接至所述铝晶种层，其中，在所述激光焊接期间，所述含非铝金属层保护所述交替的N型多晶硅区域和P型多晶硅区域。
21.根据权利要求20所述的方法，还包括：
在形成所述含非铝金属层之前，在所述交替的N型多晶硅区域和P型多晶硅区域上形成薄铝层，其中所述含非铝金属层形成在所述薄铝层上。
22.根据权利要求21所述的方法，其中形成所述薄铝层包括形成这样的铝层，该铝层具有少于与所述多个交替的N型和P型多晶硅区域形成共晶混合物所需的铝量。
23.根据权利要求21所述的方法，其中形成所述薄铝层包括形成厚度在大约20-100纳米范围内的铝层。
24.根据权利要求20所述的方法，其中形成所述含非铝金属层包括形成选自由氮化钛(TiN)层、钨钛(TiW)层和氮化钽(TaN)层构成的组中的层。
25.根据权利要求20所述的方法，其中形成所述铝晶种层包括形成厚度在大约在0.05至20微米范围内并包含含量大于约90原子％的铝的层。
26.根据权利要求20所述的方法，还包括：
图案化所述铝箔。
27.一种根据权利要求20所述的方法制造的太阳能电池。
28.一种太阳能电池，包括：
单晶硅基板；
设置于薄介电层上的多个交替的N型多晶硅区域和P型多晶硅区域，所述薄介电层设置于所述单晶硅基板上。
设置于所述交替的N型多晶硅区域和P型多晶硅区域上方的含非铝金属层；
设置于所述含非铝金属层上的铝晶种层；以及
设置于所述铝晶种层上并点焊至所述铝晶种层的铝箔部分。
29.根据权利要求28所述的太阳能电池，还包括：
设置于所述交替的N型多晶硅区域和P型多晶硅区域上的薄铝层，其中所述含非铝金属层设置于所述薄铝层上。
30.根据权利要求29所述的太阳能电池，其中所述薄铝层具有少于与所述多个交替的N型多晶硅区域和P型多晶硅区域形成共晶混合物所需的铝量。
31.根据权利要求29所述的太阳能电池，其中所述薄铝层是厚度在大约20-100纳米范围内的铝层。
32.根据权利要求28所述的太阳能电池，其中，所述含非铝金属层是选自由氮化钛(TiN)层、钨钛(TiW)层和氮化钽(TaN)层构成的组中的层。
33.根据权利要求28所述的太阳能电池，其中所述铝晶种层的厚度在大约0.05至20微米的范围内并包含含量大于约90原子％的铝。
34.根据权利要求28所述的太阳能电池，还包括：
沟槽，所述沟槽设置于所述交替的N型多晶硅区域和P型多晶硅区域的彼此之间，并且部分地延伸至单晶硅基板中。
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