CN108365090A - A kind of SnSb nano phase change thin-film materials and preparation method thereof for mixing oxygen - Google Patents
A kind of SnSb nano phase change thin-film materials and preparation method thereof for mixing oxygen Download PDFInfo
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- CN108365090A CN108365090A CN201810011764.9A CN201810011764A CN108365090A CN 108365090 A CN108365090 A CN 108365090A CN 201810011764 A CN201810011764 A CN 201810011764A CN 108365090 A CN108365090 A CN 108365090A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
Abstract
A kind of SnSb nano phase change thin-film materials for mixing oxygen, chemical composition general formula are SnSbOx, wherein x, which is represented, different mixes oxygen amount label, x=0.5,1,1.5,2；Also disclose the preparation method of the SnSb nano phase change thin-film materials for mixing oxygen.The SnSbO for mixing oxygen of the present inventionxNanometer thin membrane material has higher crystallization temperature, and the thermal stability and ten annual datas that can greatly improve PCRAM keep temperature；There is higher crystalline resistance simultaneously, so as to reduce the power consumption of PCRAM；Toxic, volatile Te elements are not contained in material, thus compare traditional Ge2Sb2Te5Material, the influence to human body and environment are smaller.
Description
Technical field
The invention belongs to a kind of semi-conducting materials of microelectronics technology, and in particular to one kind is for high stability, low work(
The SnSb phase-change storage materials of the phase transition storage of consumption.
Background technology
In recent years phase transition storage (PCRAM) development it is rapider, large capacity, high density, high speed, low-power consumption, it is low at
This etc. shows apparent advantage.PCRAM storage units are being proved that any physics is not present before 5nm technology nodes
Limitation；Hynix provides engineering print, shows PCRAM in 16nm technology nodes and 4F2Under storage density, in physics, deposit
Storage performance and can manufacture view be all it is feasible, it is even more important be using metal gate, high K medium New-type CMOS process compatible,
It can develop further with CMOS new technology nodes
For the phase-change material in phase transition storage, it is necessary to meet multiple conditions：(1) crystallization time is short；(2) fusing point is low；
(3) SET states and the resistivity contrasts of RESET state are big；(4) amorphous state of material is wanted highly stable at normal temperatures；(5) crystalline state and non-
Crystalline state reversible transformation number of operations is more；(6) before phase change after volume change it is small；(7) good performance is kept in nano-scale.Very
Obviously, many materials cannot fully meet multinomial requirement above, and the phase-change material of most study is Ge at present2Sb2Te5,
Ge2Sb2Te5Although material has preferable comprehensive performance, its thermal stability is not high, and crystallization temperature only has 160 DEG C or so,
Data can only be kept for 10 years under 85 DEG C of environment.Further, since Ge2Sb2Te5The crystallization mechanism of material is that forming core is principal mode, phase
It is slower to become speed, cannot be satisfied the design requirement of the following high-speed PCR AM.For this purpose, exploitation has more high thermal stability, faster changes
The phase-change material of speed becomes main target in the industry.
Invention content
Phase-change material to solve most study in the prior art is Ge2Sb2Te5Thermal stability is not high, and phase velocity is slower
Defect, the present invention provides a kind of SnSb nano phase change thin-film materials and preparation method thereof for mixing oxygen.
A kind of SnSb nano phase change thin-film materials for mixing oxygen, chemical composition general formula are SnSbOx, and wherein x represents different
Mix oxygen amount label, x=0.5,1,1.5,2；The preferred x is 2.It is measured through EDS, the corresponding incorporation respectively of x=0.5,1,1.5,2
Oxygen atom percentage be 89.8%, 94.6%, 95.7%, 96.2%.It is shown when x=0.5,1,1.5,2 apparent
The phase transition process of amorphous-crystalline, and its stability is in monotone increasing trend with the increase of x.And work as x>When 2, due to excess
Oxygen doping so that material loses apparent phase transition process, can not be applied to phase transition storage.
The thickness of material is 45~65nm, preferably 50nm.
A kind of preparation method of SnSb nano phase change thin-film materials that mixing oxygen, substrate use SiO2/ Si (100) substrate, splashes
Material of shooting at the target is SnSb, by being passed through argon gas and oxygen simultaneously during radio frequency sputtering deposition SnSb films, and in nanometer amount
Grade is prepared；Wherein the total flow of argon gas and oxygen is 30sccm, if oxygen flow is a sccm, corresponding argon gas stream
Amount is (30-a) sccm.
Further, the purity atomic percent of SnSb targets is 99.999% or more, background vacuum no more than 1 ×
10-4Pa。
Further, SnSb targets use radio-frequency power supply, sputtering power 25-35W, preferably 30W.
Further, for the purity percent by volume of the Ar gas 99.999% or more, sputtering pressure is 0.3~0.5Pa；
The sputtering pressure of oxygen is 0.4Pa.
The thickness of the invention SnSbOx nano phase change films can be regulated and controled by sputtering time, specific as follows：
1) SiO is cleaned2/ Si (100) substrate；
2) sputtering target material is installed；Set sputtering power, setting sputtering Ar gas and O2The gas flow and sputtering pressure of gas；
3) space base support is rotated into SnSb target position, opens the radio-frequency power supply on SnSb targets, the sputtering time 100 of setting~
200s starts to sputter SnSb target material surfaces, cleaning SnSb target position surface；
4) radio-frequency power supply applied on SnSb target position is closed, substrate to be sputtered is rotated into SnSb target position, is opened
Radio-frequency power supply on SnSb target position starts to sputter SnSbOx films according to the sputtering time of setting；Described in being obtained after sputtering
Mix oxygen SnSb nano phase change thin-film materials；
5) step 2) -4 is repeated), change Ar gas and O2The flow proportional of gas, in SiO2It is prepared respectively on/Si (100) substrate
Go out SnSbOx (x=0.5,1,1.5,2) nano phase change thin-film material.
The above-mentioned SnSb nano phase change thin-film materials for mixing oxygen of the present invention, can be by the Ar gas and O in preparation method2The gas of gas
Body flow-rate ratio controls the content of the O atom in the SnSb nano phase change thin-film materials for mixing oxygen obtained.
Suitable O atom is mixed in phase-change material, by forming the amorphous oxide particle of high stability, is distributed in
Around phase-change material, the crystallization of phase-change material on the one hand can be prevented, improves the thermal stability of phase-change material entirety；Another party
Face increases number of grain boundaries, to improve crystalline resistance, can reduce device the RESET during by reducing crystallite dimension
Power consumption.For SnSb materials since its thermal stability is poor, the SnSb materials deposited by magnetically controlled sputter method are crystalline state, because
This cannot be satisfied the technology requirement of phase transition storage.But SnSb material crystallization rates are very fast, this benefits from rich Sb growths and is
Main crystallization Mechanism, this so that it is very favorable for the Information Access speed for accelerating PCRAM.
The SnSbOx nano film materials for mixing oxygen of the present invention can be applied to phase transition storage, with traditional phase-change thin film
Material is compared and is had the following advantages that：First, SnSbOx nano phase changes thin-film material has higher crystallization temperature, can carry significantly
The thermal stability of high PCRAM and ten annual datas keep temperature；Secondly, SnSbOx nano phase change thin-film materials have higher crystalline substance
State resistance, so as to reduce the power consumption of PCRAM；Again, without containing toxic, volatile Te members in SnSbOx phase-change materials
Element, thus compare traditional Ge2Sb2Te5Material, the influence to human body and environment are smaller.
Description of the drawings
Fig. 1 is for SnSbOx (x=0.5,1,1.5,2) the nano phase change thin-film materials of the present invention and for comparative example 1
The In-situ resistance of SnSb thin film phase change materials and the relation curve of temperature；
Fig. 2 is that SnSbOx (x=0.5,1,1.5,2) the nano phase change thin-film materials of the present invention and the SnSb for comparing receive
The Kubelka-Munk functional images of rice phase change film material；
Fig. 3 is SnSbOx (x 1.5,2) the nano phase change thin-film materials of the present invention and the SnSb nanometer phases for comparing
The XRD diagram picture of thinning membrane material.
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Embodiment
SnSbO is prepared first2Nano thin-film, preparation include the following steps：
1 cleaning SiO2/ Si (100) substrate, cleaning surface, the back side, removal dust granule, organic and inorganic impurity；
A) it is cleaned by ultrasonic by force in acetone soln 3-5 minutes, deionized water is rinsed；
B) it is cleaned by ultrasonic by force in ethanol solution 3-5 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side；
C) in 120 DEG C of drying in oven steam, about 20 minutes.
2. preparing SnSbO using RF sputtering method2Prepare before film：
A) SnSb sputtering target materials are installed, the purity of target reaches 99.999% (atomic percent), and by base vacuum
It is evacuated to 1 × 10-4Pa；
B) setting sputtering power 30W；
C) high-purity Ar and high-purity O are used2As sputter gas (percent by volume reaches 99.999%), Ar air-flows are set
Amount is 28sccm, O2Flow is 2sccm, and sputtering pressure is adjusted to 0.4Pa.
3. preparing SnSbO using magnetically controlled sputter method2Nano phase change thin-film material：
A) space base support is rotated into SnSb target position, the radio-frequency power supply applied on SnSb targets is opened, according to the sputtering of setting
Time (100s) starts to sputter SnSb targets, cleans SnSb target material surfaces；
B) after the completion of the cleaning of SnSb target material surfaces, the radio-frequency power supply applied on SnSb targets is closed, substrate to be sputtered is revolved
SnSb target position is gone to, SnSb target position radio-frequency power supplies are opened, according to the sputtering time of setting, starts sputtering and mixes oxygen SnSb films.
The SnSbO finally obtained2Film thickness is 50nm, and film thickness controls (125s), SnSbO by sputtering time2
Sputter rate be 2.5s/nm (film thickness=sputter rate × sputtering time).
It prepares the above method and prepares SnSbO0.5, SnSbO1, SnSbO1.5And SnSbO2.5Nano phase change thin-film material, material
Thickness be 45-65nm；Wherein, Ar throughputs are set as 29.5sccm, O2Flow is 0.5sccm, prepares SbN0.5Nanometer phase
Thinning membrane material；The Ar throughputs set is 29sccm, O2Flow is 1sccm, prepares SnSbO1Nano phase change thin-film material；If
Fixed Ar throughputs are 28.5sccm, O2Flow is 1.5sccm, prepares SnSbO1.5Nano phase change thin-film material；Set Ar air-flows
Amount is 27.5sccm, O2Flow is 2.5sccm, prepares SnSbO2.5Nano phase change thin-film material.
Comparative example
Prepare single layer SnSb phase change film materials, representation SnSb, thickness 50nm.
Preparation process is：
1. cleaning SiO2/ Si (100) substrate, cleaning surface, the back side, removal dust granule, organic and inorganic impurity；
A) it is cleaned by ultrasonic by force in acetone soln 3-5 minutes, deionized water is rinsed；
B) it is cleaned by ultrasonic by force in ethanol solution 3-5 minutes, deionized water is rinsed, high-purity N2Dry up surface and the back side；
C) in 120 DEG C of drying in oven steam, about 20 minutes.
2. preparing before preparing SnSb films using RF sputtering method：
A) SnSb sputtering target materials are installed, the purity of target reaches 99.999% (atomic percent), and by base vacuum
It is evacuated to 1 × 10-4Pa；
B) setting sputtering power 30W；
C) use high-purity Ar gas as sputter gas (percent by volume reaches 99.999%), set Ar throughputs as
30sccm, and sputtering pressure is adjusted to 0.4Pa.
3. preparing SnSb nano phase change thin-film materials using magnetically controlled sputter method：
A) space base support is rotated into SnSb target position, the radio-frequency power supply applied on SnSb targets is opened, according to the sputtering of setting
Time (100s) starts to sputter SnSb targets, cleans SnSb target material surfaces；
B) after the completion of the cleaning of SnSb target material surfaces, the radio-frequency power supply applied on SnSb targets is closed, it will be for sputtering substrate rotation
SnSb target position is gone to, SnSb target position radio-frequency power supplies are opened, according to the sputtering time (125s) of setting, starts to sputter SnSb films.
Experimental method and result
Fig. 1 is for SnSbOx (x=0.5,1,1.5,2) the nano phase change thin-film materials of the present invention and for comparative example 1
The In-situ resistance of SnSb thin film phase change materials and the relation curve of temperature, the heating rate in test process are 30 DEG C/min.Knot
Fruit shows that at low temperature, all thin-film materials are in amorphous high-impedance state, and with the continuous raising of temperature, film resistor slowly drops
Low, when reaching its phase transition temperature, film resistor reduces rapidly, and keeps the resistance constant substantially after reaching a certain value, shows thin
Film has occurred by the transformation of amorphous state to crystalline state.Test result shows that, with the increase for mixing oxygen amount, the crystallization temperature of film gradually carries
Height, SnSbO0.5, SnSbO1, SnSbO1.5And SnSbO2Crystallization temperature promote most 168 DEG C, 212 DEG C, 225 DEG C and 240 respectively
DEG C, show that the thermal stability of phase change film material is enhanced, and for SnSbO2.5Nano phase change thin-film material comes
It says, since oxygen content incorporation is excessive, causes to hardly happen phase transformation.The crystalline resistance of phase change film material is not by when mixing oxygen
210 Ω increase SnSbO22156 Ω, to contribute to reduce RESET processes power consumption.Meanwhile SnSbO0.5, SnSbO1,
SnSbO1.5And SnSbO2At least there are two quantity between the amorphous state resistance and crystalline resistance of four kinds of nano phase change thin-film materials
Grade or more difference, be conducive to phase transition storage and more efficiently deposit reading data.
Fig. 2 is for SnSbOx (x=0.5,1,1.5,2) the nano phase change thin-film materials of the present invention and for comparative example 1
The Kubelka-Munk functional images of SnSb thin film phase change materials.Usual band gap weighs the non-of inorganic non-metallic material
Crystalline resistance is worth size, and if band gap is bigger, carrier concentration is lower in gap, and Thin film conductive performance is poorer,
Amorphous state resistance is higher, on the contrary then amorphous state resistance is lower.It can be seen from the figure that the present invention mix oxygen SnSb films with
The raising of oxygen amount is mixed, band gap is also incremented by therewith, i.e. SnSbO0.5, SnSbO1, SnSbO1.5And SnSbO2The energy band of phase-change thin film
Gap is respectively 1.23eV, 1.28eV, 1.45eV and 1.52eV.That is, the SnSbO of the present inventionx(x=0.5,1,1.5,
2) amorphous state resistance with SnSb thin-film materials bigger purer than tradition, greatly reduces power consumption during SET.
Fig. 3 is the SnSbO of the present inventionx(x=1.5,2) nano phase change thin-film material and SnSb films for comparative example 1
The XRD diagram picture of phase-change material.XRD curves are typically to judge that nano phase change thin-film material phase structure in crystallization process changes.
As seen from Figure 3, SnSb, SnSbO1.5And SnSbO2Nano phase change thin-film material is respectively in 170 DEG C, 250 DEG C and 300 DEG C
Start apparent peak occur.Illustrate that three kinds of phase change film materials belong to deposited before the temperature, apparent phase does not occur
Become, and from figure it can also be seen that when oxygen flow reaches 2sccm, (110) mutually disappear in crystallization process, table
Bright being on the increase with oxygen content, (110) phase crystallization process are inhibited, and also result in SnSbO2(002) peak most
More than half height is wider than pure SnSb nano phase changes thin-film material, is inversely proportional with grain size according to Scherrer formula maximum halfwidth
Relationship, can judge SnSbO indirectly2Crystal grain smaller than pure SnSb, this means that SnSbO2It is generated after annealed more
Crystal boundary, cause electron scattering to increase, Thin film conductive performance is deteriorated, and crystalline resistance increases, and greatly reduces device in RESET mistakes
Power consumption in journey.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (6)
1. a kind of SnSb nano phase change thin-film materials for mixing oxygen, which is characterized in that its chemical composition general formula is SnSbOx, wherein x generations
The different oxygen amount of mixing of table marks, x=0.5,1,1.5,2.
2. the SnSb nano phase change thin-film materials as described in claim 1 for mixing oxygen, which is characterized in that the thickness of material is 45-
65nm。
3. a kind of preparation method of SnSb nano phase change thin-film materials that mixing oxygen, which is characterized in that
Substrate uses SiO2/ Si (100) substrate, sputtering target material SnSb, by during radio frequency sputtering deposition SnSb films
It is passed through argon gas and oxygen simultaneously, and is prepared in nanometer scale；Wherein the total flow of argon gas and oxygen is 30sccm.
4. the preparation method of the SnSb nano phase change thin-film materials as claimed in claim 3 for mixing oxygen, which is characterized in that SnSb targets
For the purity atomic percent of material 99.999% or more, background vacuum is not more than 1 × 10-4Pa。
5. the preparation method of the SnSb nano phase change thin-film materials as claimed in claim 3 for mixing oxygen, which is characterized in that SnSb targets
Material uses radio-frequency power supply, sputtering power 25-35W.
6. the preparation method of the SnSb nano phase change thin-film materials as claimed in claim 3 for mixing oxygen, which is characterized in that
Specifically include following steps：
1) SiO is cleaned2/ Si (100) substrate；
2) sputtering target material is installed；Set sputtering power, setting sputtering Ar gas and O2The gas flow and sputtering pressure of gas；
3) space base support is rotated into SnSb target position, opens the radio-frequency power supply on SnSb targets, 100~200s of sputtering time of setting,
Start to sputter SnSb target material surfaces, cleaning SnSb target position surface；
4) radio-frequency power supply applied on SnSb target position is closed, substrate to be sputtered is rotated into SnSb target position, opens SnSb targets
Radio-frequency power supply on position starts to sputter SnSbOx films according to the sputtering time of setting；Oxygen is mixed described in being obtained after sputtering
SnSb nano phase change thin-film materials；
5) step 2) -4 is repeated), change Ar gas and O2The flow proportional of gas, in SiO2It is prepared respectively on/Si (100) substrate
SnSbOx(x=0.5,1,1.5,2) nano phase change thin-film material.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113072915A (en) * | 2021-03-24 | 2021-07-06 | 华中科技大学 | Sb based on oxygen doping2Te3Phase change material, phase change memory and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080192534A1 (en) * | 2007-02-08 | 2008-08-14 | Macronix International Co., Ltd. | Memory element with reduced-current phase change element |
| CN102142518A (en) * | 2010-12-31 | 2011-08-03 | 中国科学院上海微系统与信息技术研究所 | Phase-change storage material and preparation method thereof |
| CN104393171A (en) * | 2014-11-17 | 2015-03-04 | 江苏理工学院 | Nitrogen-doped nano-film material applied to quick high-stability phase transition storage and preparation method |
| CN106410025A (en) * | 2016-10-19 | 2017-02-15 | 江苏理工学院 | Oxygen-doped Sb nanometer phase change thin-film materials and preparation method thereof and application thereof |
-
2018
- 2018-01-05 CN CN201810011764.9A patent/CN108365090A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080192534A1 (en) * | 2007-02-08 | 2008-08-14 | Macronix International Co., Ltd. | Memory element with reduced-current phase change element |
| CN102142518A (en) * | 2010-12-31 | 2011-08-03 | 中国科学院上海微系统与信息技术研究所 | Phase-change storage material and preparation method thereof |
| CN104393171A (en) * | 2014-11-17 | 2015-03-04 | 江苏理工学院 | Nitrogen-doped nano-film material applied to quick high-stability phase transition storage and preparation method |
| CN106410025A (en) * | 2016-10-19 | 2017-02-15 | 江苏理工学院 | Oxygen-doped Sb nanometer phase change thin-film materials and preparation method thereof and application thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113072915A (en) * | 2021-03-24 | 2021-07-06 | 华中科技大学 | Sb based on oxygen doping2Te3Phase change material, phase change memory and preparation method |
| CN113072915B (en) * | 2021-03-24 | 2022-03-11 | 华中科技大学 | Sb based on oxygen doping2Te3Phase change material, phase change memory and preparation method |
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Application publication date: 20180803 |