CN108365085A - A kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping - Google Patents
A kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping Download PDFInfo
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- 239000004020 conductor Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 17
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 17
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 17
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000001291 vacuum drying Methods 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000006230 acetylene black Substances 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 230000010291 membrane polarization Effects 0.000 claims description 3
- 239000003755 preservative agent Substances 0.000 claims description 3
- 230000002335 preservative effect Effects 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 11
- 150000001875 compounds Chemical class 0.000 abstract description 10
- 230000009975 flexible effect Effects 0.000 abstract description 4
- 239000002105 nanoparticle Substances 0.000 abstract description 4
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract description 2
- 230000007812 deficiency Effects 0.000 abstract 1
- 239000002120 nanofilm Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 7
- 229910002113 barium titanate Inorganic materials 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 241001274660 Modulus Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 black Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920002627 poly(phosphazenes) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000033772 system development Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/092—Forming composite materials
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- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention belongs to the nano compound film generator preparation fields that piezoelectric material is modified, and are related to a kind of preparation method of the nanometer piezoelectric membrane generator of conductive material doping.It is low to solve Conventional nano film generator piezoelectric modulus, the technical problems such as output power deficiency.A kind of preparation method of the nano combined piezoelectric membrane generator of conductive material doping, by piezoelectric nano material, PDMS and conductive conductive material combine, prepare the uniform flexible piezoelectric film of distribution of particles, piezoelectric modulus height, the larger nanometer piezoelectric membrane generator of output power are obtained by high voltage polarization.Laminated film preparation process of the present invention is simple, and the period is short, of low cost；Nano particle is evenly dispersed, and the film thickness that whirl coating obtains is uniform；Laminated film has good flexibility, and repeatedly strike will not be broken；Piezoelectric modulus is high, output power, has good stability.
Description
Technical field
The invention belongs to the nano compound film generator preparation fields that piezoelectric material is modified, and are related to a kind of conductive material and mix
The preparation method of miscellaneous nanometer Piezoelectric anisotropy film generator.
Background technology
With the progress of the high-technology fields such as Internet of Things, MEMS and nano material, portable, embedded work(
Energy device just develops towards small size and low-power consumption aspect, and traditional energy-provision way has not adapted to these high-technology field devices
The working environment and energy requirement of part.Therefore, Devoting Major Efforts To Developing nanoscale may continue from power supply technique, solve mobile electronic device
With demand of the micro-nano System Development to sustainability self powered supply by be future technology industry development a center of gravity.In recent years
Come, nano generator receives the extensive concern of researcher as active active sensor.
2005, Wang Zhonglin seminars were dedicated to studying ZnO nano-wire generator, ideally realize the hair of nanoscale
Electricity Functional.Therewith, the piezoelectric membrane of base etc. is received based on PZT, PVDF, barium titanate and potassium niobate also in succession to occur.Notification number is CN
104157784 Chinese patent proposes a kind of organic piezoelectric materials PVDF and piezoelectric ceramics nano particle BaTiO3Compound nanometer
Piezoelectric generator, while can lightening LED lamp.Notification number is that the Chinese patent of 106876580 A of CN proposes a kind of transparent flexible
PDMS/ZnO Piezoelectric anisotropy formula nanometer generating machine equipments, power generator flexibility is strong, and operability is simple, perfectly realizes hair
Electric motors function.Notification number is that the Chinese patent of 105529397 A of CN proposes a kind of PMN-PT/PVDF-TrFE composite and flexibles pressure
Electric nano generator, production cost is low, and performance is stablized.In the research reported before, piezoelectric material and polyphosphazene polymer are used
The nano compound film that object makes is closed, although having good flexibility, there are still piezoelectric moduluses for prepared piezoelectric membrane
It is low, the shortcomings of output power is insufficient.
Invention content
The problems such as present invention is low for Conventional nano laminated film generator piezoelectric modulus, and output power is insufficient, it is proposed that
A kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping.
A kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping, by piezoelectric nano material,
PDMS and conductive material combine, and prepare the uniform flexible piezoelectric film of distribution of particles, piezoelectricity is obtained by high voltage polarization
Coefficient is high, the larger nanometer piezoelectric membrane generator of output power.Specifically comprise the following steps：
（1）Prepare the nanometer Piezoelectric anisotropy solution of conductive material doping：PDMS, piezoelectric material and conductive material are mixed, to mixed
It closes object to stir 1-1.5 hours, obtains evenly dispersed nanometer Piezoelectric anisotropy solution；The mass ratio of piezoelectric material and PDMS be 0.1 ~
7:10, the mass ratio of conductive material and PDMS are 3 ~ 9:125；
（2）Obtain the nanometer Piezoelectric anisotropy film of conductive material doping：Silicon chip is inhaled on photoresist spinner, gained nanometer piezoelectricity is answered
It closes solution to drop on silicon chip, 500-2000 r/min are arranged in photoresist spinner rotating speed, take the silicon chip for having got rid of film after rotation 30-40 s
Under be placed in culture dish, then culture dish is placed in vacuum drying chamber, culture dish is taken out after vacuum drying, by the nanometer on silicon chip
Piezoelectric anisotropy film is taken off for use；
（3）Electrode fabrication：Top electrode is respectively welded in nanometer Piezoelectric anisotropy film both sides, PET is used in combination to be packaged；
（4）The nanometer Piezoelectric anisotropy membrane polarization of conductive material doping：2000- is applied to the nanometer Piezoelectric anisotropy film after encapsulation
The 15-20 hour of high voltage polarization of 3000 V, make the electricdomain of particle in film along direction of an electric field proper alignment, obtains having best
The nanometer piezoelectric membrane generator of piezoelectric property.
Further, PDMS main solvents and hardening solvent press 10:1 mass ratio mixes；Piezoelectric material is lead titanate-zirconate or oxygen
Change zinc or barium titanate or aluminium nitride or lead magnesio-niobate or sodium niobate or potassium niobate or lithium niobate；Conductive material is that acetylene black or carbon are received
Mitron.
The present invention not only has the flexibility of PDMS, while having the higher piezoelectric property of piezoelectric material more single than tradition,
There is good application prospect in terms of preparing composite Nano piezoelectric membrane.The laminated film preparation process is simple, the period
Short, of low cost, nano particle is evenly dispersed, and the film thickness that whirl coating obtains is uniform（60~240μm）；Laminated film simultaneously
With good flexibility, repeatedly strike will not be broken, and piezoelectric modulus is high, output power, has good stability.
Description of the drawings
Fig. 1 are the preparation process of the nanometer piezoelectric membrane generator of conductive material doping.
The front and back nano generator output voltage of Fig. 2 doping compares.
The laminated film performance test of Fig. 3 conductive materials doping：（a）The comparison of the front and back dielectric constant of doping；（b）It mixes
Miscellaneous front and back ferroelectric hysteresis loop compares.
Fig. 4 composite nano generators drive Test Diode：（a）Circuit diagram；（b）Light LED.
Specific implementation mode
A kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping, specific preparation process are as follows：
（1）Prepare the nanometer Piezoelectric anisotropy solution of conductive material doping：Weigh PDMS main solvents and hardening solvent respectively with balance,
By 10:1 mass ratio pours into beaker after mixing；Then it weighs with scale（Including but not limited to）Lead titanate-zirconate, zinc oxide,
The piezoelectric materials such as barium titanate, aluminium nitride, lead magnesio-niobate, sodium niobate, potassium niobate, lithium niobate are put into beaker；Finally weigh acetylene
The conductive materials such as black, carbon nanotube are put into beaker.Beaker is placed in magnetic agitation water-bath, rotating speed is 2500 r/min,
Beaker mouth is sealed with preservative film, stirs 1-1.5 hours, obtains evenly dispersed nanometer Piezoelectric anisotropy solution.Piezoelectric material with
The mass ratio of PDMS is 0.1 ~ 7:10（It may be selected 0.1:10、1.0:10、2.0:10、3.0:10、4.0:10、5.0:10、6.0:
10、7.0:10）, the mass ratio of conductive material and PDMS are 3 ~ 9:125（It may be selected 3:125、4:125、5:125、6:125、7:
125、8:125、9:125）.
（2）Obtain the nanometer Piezoelectric anisotropy film of conductive material doping：Cleaned silicon chip is inhaled on photoresist spinner, with drop
Pipe drops in gained nanometer Piezoelectric anisotropy solution on silicon chip, and 500-2000 r/min are arranged in photoresist spinner rotating speed（500 r/ may be selected
Min, 1000 r/min, 1500 r/min, 2000 r/min obtain the film of different-thickness）, rotation 30-40 s（It may be selected
30s、35s、40s）The silicon chip for having got rid of film is removed afterwards and is placed in culture dish, then culture dish is placed in vacuum drying chamber, is taken out
Vacuum, temperature setting is at 60-90 DEG C（It may be selected 60 DEG C, 70 DEG C, 80 DEG C, 90 DEG C）, vacuum drying time is 20-40 minutes（It can
Selection 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes）.Culture dish is finally taken out, with tweezers by the nanometer pressure on silicon chip
Electric laminated film is taken off, for use.
（3）Electrode fabrication：Top electrode is respectively welded in laminated film both sides（Including but not limited to）Cu is used in combination PET to carry out
Encapsulation.
（4）The nanometer Piezoelectric anisotropy membrane polarization of conductive material doping：2000-3000 is applied to nanometer Piezoelectric anisotropy film
V（2000V, 2500 V, 3000V may be selected）15-20 hour of high voltage polarization（May be selected 15 hours, 16 hours, 17 hours,
18 hours, 19 hours, 20 hours）, make the electricdomain of particle in film along direction of an electric field proper alignment, obtain that there is best piezoelectricity
The nanometer piezoelectric membrane generator of energy.
Technical scheme of the present invention is described in detail with reference to example.Obviously, described example is this hair
Bright middle small part, rather than whole examples.Based on the example in the present invention, those skilled in the art are not making creation
Property labour under the premise of the every other example that is obtained, belong to the scope of the present invention.
Prepare BaTiO3/ PDMS/C nanometers of Piezoelectric anisotropy solution：Weigh PDMS main solvents and hardening solvent respectively with balance
Total 10g, by 10:1 mass ratio pours into beaker after mixing；Then weigh with scale 5g BaTiO3Nano particle is put into burning
In cup；Acetylene black 0.496g is finally weighed to be put into beaker.Beaker is placed in magnetic agitation water-bath, rotating speed is 2000 r/
Min seals beaker mouth with preservative film, stirs 1 hour, and the nanometer Piezoelectric anisotropy for obtaining evenly dispersed conductive material doping is molten
Agent.Cleaned 2cm*2cm silicon chips are inhaled on photoresist spinner, are dropped in gained mixed solution on silicon chip with dropper, photoresist spinner turns
1000 r/min of speed setting（Obtain the film of 180 μ m thicks）, the silicon chip for having got rid of film is removed it is placed on culture after rotating 30 s
In ware, then culture dish is placed in vacuum drying chamber, vacuumized, for temperature setting at 80 DEG C, vacuum drying time is 30 minutes.Most
After take out culture dish, the film on silicon chip is peeled with tweezers, obtains uniformly compound piezoelectric membrane.By laminated film both sides
Cu electrodes are respectively welded, PET is used in combination to be packaged.The high voltage polarization for finally applying 3000 V to nano compound film is 20 small
When, you can obtain the nano generator with best piezoelectric property.Preparation process is as shown in Figure 1.After taking out device, positive and negative anodes phase
Even, nano compound film generator is obtained after placing 24 hours, generator is connected into oscillograph, applies stress, measures output electricity
Pressure, you can obtain higher output voltage.Compared to the nano compound film generator undoped with C, it is bright to mix the output voltage after C
It is aobvious to increase, as shown in Figure 2.Meanwhile mixing the permittivity ε of nano compound film after CrWith residual polarization PrAll dramatically increase（Figure
3）.Utilize formula（Ɛ0 = 8.854 × 10−12F/m, Q11 （0.05-0.1 m4/C2））It can calculate
Go out the d of nano compound film3315.3 pC/N after mixing C are changed to by 5.4 pC/N before not mixing C.Nano compound film is sent out
The circuit of the upper simple driving diode of motor connection, generated energy is stored by ultracapacitor, and successfully lights two poles
Pipe（Fig. 4）.
Claims (4)
1. a kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping, which is characterized in that including as follows
Step：
（1）Prepare the nanometer Piezoelectric anisotropy solution of conductive material doping：PDMS, piezoelectric material and conductive material are mixed, to mixed
It closes object to stir 1-1.5 hours, obtains the nanometer Piezoelectric anisotropy solution of evenly dispersed conductive material doping；Piezoelectric material and PDMS
Mass ratio be 0.1 ~ 7:10, the mass ratio of conductive material and PDMS are 3 ~ 9:125；
（2）Obtain the nanometer Piezoelectric anisotropy film of conductive material doping：Silicon chip is inhaled on photoresist spinner, gained nanometer piezoelectricity is answered
It closes solution to drop on silicon chip, 500-2000 r/min are arranged in photoresist spinner rotating speed, take the silicon chip for having got rid of film after rotation 30-40 s
Under be placed in culture dish, then culture dish is placed in vacuum drying chamber, culture dish is taken out after vacuum drying, by the nanometer on silicon chip
Piezoelectric anisotropy film is taken off for use；
（3）Electrode fabrication：Top electrode is respectively welded in nanometer Piezoelectric anisotropy film both sides, PET is used in combination to be packaged；
（4）The nanometer Piezoelectric anisotropy membrane polarization of conductive material doping：2000- is applied to the nanometer Piezoelectric anisotropy film after encapsulation
The 15-20 hour of high voltage polarization of 3000 V, make the electricdomain of particle in film along direction of an electric field proper alignment, obtains having best
The nanometer Piezoelectric anisotropy film generator of piezoelectric property.
2. a kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping as described in claim 1,
It is characterized in that, PDMS main solvents and hardening solvent press 10:1 mass ratio mixes；Piezoelectric material is lead titanate-zirconate or zinc oxide or titanium
Sour barium or aluminium nitride or lead magnesio-niobate or sodium niobate or potassium niobate or lithium niobate；Conductive material is acetylene black or carbon nanotube.
3. a kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping as claimed in claim 1 or 2,
It is characterized in that, step（1）It is middle that the container for filling mixture is positioned in magnetic agitation water-bath, seal container with preservative film
Mouthful, rotating speed is that 2500 r/min are stirred.
4. a kind of preparation method of the nanometer Piezoelectric anisotropy film generator of conductive material doping as claimed in claim 1 or 2,
It is characterized in that, step（2）In vacuum drying temperature setting at 60-90 DEG C, vacuum drying time is 20-40 minutes.
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Cited By (6)
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|---|---|---|---|---|
| CN110132459A (en) * | 2019-04-26 | 2019-08-16 | 华中科技大学 | A kind of preparation method and products thereof of flexible piezoelectric strain gauge |
| CN111063795A (en) * | 2019-12-18 | 2020-04-24 | 华中科技大学鄂州工业技术研究院 | Piezoelectric film, piezoelectric nano generator and preparation method thereof |
| CN111082701A (en) * | 2019-12-18 | 2020-04-28 | 太原理工大学 | Flexible nano generator design method based on interlayer electric field effect |
| CN113708658A (en) * | 2021-08-27 | 2021-11-26 | 电子科技大学 | Method for simultaneously improving piezoelectric and triboelectric transduction efficiencies of composite generator |
| CN114133273A (en) * | 2021-12-06 | 2022-03-04 | 湖北大学 | Preparation method of core-shell structure piezoelectric material and piezoelectric nano generator |
| CN117782379A (en) * | 2024-02-27 | 2024-03-29 | 太原理工大学 | Piezoelectric/pyroelectric dual-function flexible high-temperature-resistant sensor |
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| CN104803608B (en) * | 2015-02-06 | 2017-05-24 | 华东师范大学 | Multilayer homogeneous PbMnxTi1-xO3 thin film and preparation method thereof |
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