CN108364669A - Fuse Type printed memory and preparation method thereof - Google Patents
Fuse Type printed memory and preparation method thereof Download PDFInfo
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- CN108364669A CN108364669A CN201810116634.1A CN201810116634A CN108364669A CN 108364669 A CN108364669 A CN 108364669A CN 201810116634 A CN201810116634 A CN 201810116634A CN 108364669 A CN108364669 A CN 108364669A
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- Prior art keywords
- fuse
- fuse type
- printed memory
- gap
- type printed
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Abstract
The present invention relates to printing technical field of memory more particularly to a kind of Fuse Type printed memory and preparation method thereof.The Fuse Type printed memory, including substrate and at least one Fuse Type device positioned at substrate surface；Wherein, the Fuse Type device includes：Fuse function material layer is set to the substrate surface, and the fuse function material layer uses the conductive material with nano thread structure to be fabricated；Multiple electrodes are set to the fuse function material surface, have a gap between adjacent electrode, fuse function area is constituted by the fuse function material layer that the gap exposes；Heat insulation packed layer is placed in the gap and covers the fuse function area.Present invention reduces the blowout currents of Fuse Type memory, shorten fusing time.
Description
Technical field
The present invention relates to printing technical field of memory more particularly to a kind of Fuse Type printed memory and preparation method thereof.
Background technology
Delivering organic conductive macromolecule material on Nature Journal for the first time since 2003 combines traditional silicon diode to realize
Printed memory part is repeatedly read in single write-in, and by the development in more than ten years, the research of printed memory part experienced from silicon substrate
Based on device, printing material auxiliary is to half printing technology memory device, then arrives the development of newest all print technique memory device
Process.Entire printing field of storage completes the improvement of technique, reduces the high cost process step for needing high temperature, vacuum condition
Suddenly, more perfect printed memory part system and has gradually been developed.Wherein, Fuse Type printed memory is due to its stabilization
Property is good while simple for process, easy to use, receives the concern of people.But for Fuse Type printed memory, according to
So there is the solutions of the problems demands such as power consumption height, process costs height.
The operation principle of Fuse Type printed memory is to apply voltage by fuse function material into memory, when having
When electric current flows through fuse function material, material can be because of the comprehensive function of the joule heating effect and microcosmic electromigration effect of macroscopic view
And the fusing of recurring structure, the disconnection of conductive path is caused, and then resistance value is caused to rise to.The change in resistance is fed back in circuit
In, binary data 1 or 0 is can be exchanged by processing, to realize the store function of data.
However, being fused since Fuse Type printed memory device needs enough electric currents to realize, in the prior art
In, the blowout current of Fuse Type printed memory device is larger, causes power consumption cost to increase, it is difficult to meet the low of practical circuit
Power consumption application demand.In addition, it is mainly inkjet printing mode to prepare the presently used technique of Fuse Type printed memory device, one
Aspect equipment and maintenance cost are high, and another aspect inkjet printing mode is difficult to be mass produced.Therefore, Fuse Type is reduced
The blowout current of printed memory device, using low cost, the technique that can be mass-produced for realizing Fuse Type printing storage
The commercial application of device is of great significance.
Invention content
A kind of Fuse Type printed memory of present invention offer and preparation method thereof is deposited to solve existing Fuse Type printing
The problem that the blowout current of reservoir is larger shortens fusing time to reduce blowout current.
To solve the above-mentioned problems, the present invention provides a kind of Fuse Type printed memory, including substrate and it is located at substrate
At least one Fuse Type device on surface；Wherein, the Fuse Type device includes：Fuse function material layer is set to the lining
Bottom surface, and the fuse function material layer uses the conductive material with nano thread structure to be fabricated；Multiple electrodes, setting
There is a gap, the fuse function exposed by the gap between the fuse function material surface, adjacent electrode
Material layer constitutes fuse function area；Heat insulation packed layer is placed in the gap and covers the fuse function area.
Preferably, the material of the substrate is polyethylene terephthalate, polyethylene naphthalate or polyamides
Imines.
Preferably, the gap width between adjacent electrode is 100 μm~1000 μm.
Preferably, the conductive material with nano thread structure is nano silver wire, copper nano-wire, nanowires of gold or nickel nanometer
Line.
Preferably, the material of the heat insulation packed layer is polytetrafluoroethylene (PTFE), polystyrene or polyurethane.
Preferably, at least one Fuse Type device includes multiple Fuse Type devices, and multiple Fuse Type devices are in the lining
Bottom surface is arranged in array.
Preferably, further include patterned dielectric isolation layer；There are multiple ditches being mutually parallel in the dielectric isolation layer
Road, the raceway groove is for accommodating Fuse Type device, to realize the mutually isolated of Fuse Type device in adjacent channel.
Preferably, the dielectric isolation layer includes a plurality of insulating isolation belt being mutually parallel, between adjacent insulating isolation belt
It is 100 μm~1000 μm raceway grooves to form a width.
To solve the above-mentioned problems, the present invention also provides a kind of preparation methods of Fuse Type printed memory, including such as
Lower step：One substrate is provided；Using bar coating process by nano wire conductive material solution coating to the substrate surface, with shape
At fuse function material layer；Multiple electrodes are prepared in the fuse function material surface, there is a gap between adjacent electrode,
And fuse function area is constituted by the fuse function material layer that the gap exposes；It is formed in the gap described in a covering
The heat insulation packed floor in fuse function area.
Preferably, further include following steps：A patterned dielectric isolation layer, the insulation are formed in the substrate surface
There are multiple raceway grooves being mutually parallel in separation layer；Using bar coating process by nano wire conductive material solution coating to described
In raceway groove, to form fuse function material layer in the raceway groove.
Fuse Type printed memory provided by the invention and preparation method thereof, using the conductive material with nano thread structure
Fuse function material layer is manufactured, the reguline metal relative to homogeneity has lower fusing point；Conduction material with nano thread structure
There is the structure that involves that overlapped, contact resistance is larger herein, and more heat is will produce according to Joule's law, is more easy to send out between material
Raw fusing；Nano wire conductive material is due to the diameter of its Nano grade, and under this microstate, electromigration effect can make nano wire
It is more easy to fuse.Therefore, nano wire conductive material can promote the generation of fusing to greatest extent, make circuit in lower electricity
It fuses under pressure, current conditions.Meanwhile by covering heat insulation packed floor in fuse function area, to optimize operating chacteristics.Root
According to Joule's law, electric current by when conductor will produce heat, heat causes the rising of conductor temperature, reach occur after fusing point it is molten
It is disconnected.Heat insulation packed floor is covered in fuse function area can effectively reduce thermal losses, further promote the generation of fusing, shorten
Fusing time.
Description of the drawings
Attached drawing 1 is the overlooking structure diagram of Fuse Type printed memory in the first specific implementation mode of the invention；
Attached drawing 2 is the side structure schematic view of Fuse Type printed memory in the first specific implementation mode of the invention；
Attached drawing 3 is the preparation method flow chart of Fuse Type printed memory in the first specific implementation mode of the invention；
Attached drawing 4A-4D is the preparation method main technique of Fuse Type printed memory in the first specific implementation mode of the invention
Flow vertical view；
Attached drawing 5A-5D is the preparation method main technique of Fuse Type printed memory in the first specific implementation mode of the invention
Flow side view；
Attached drawing 6 is the overlooking structure diagram of Fuse Type printed memory in the second specific implementation mode of the invention.
Specific implementation mode
Below in conjunction with the accompanying drawings to the specific implementation mode of Fuse Type printed memory provided by the invention and preparation method thereof
It elaborates.
First specific implementation mode
Present embodiment provides a kind of Fuse Type printed memory, and attached drawing 1 is in the specific embodiment of the invention
The overlooking structure diagram of Fuse Type printed memory, attached drawing 2 are Fuse Type printed memories in the specific embodiment of the invention
Side structure schematic view.
As shown in Figure 1, 2, present embodiment provide Fuse Type printed memory, including substrate 11 and be located at substrate
At least one Fuse Type device on 11 surfaces；Wherein, the Fuse Type device includes：Fuse function material layer 12 is set to institute
11 surface of substrate is stated, and the fuse function material layer 12 is fabricated using the conductive material with nano thread structure；It is multiple
Electrode 13 is set to 12 surface of fuse function material layer, has a gap between adjacent electrode 13, exposed by the gap
The fuse function material layer 12 constitute fuse function area；Heat insulation packed layer 14 is placed in the gap and covers described molten
Disconnected functional areas.In this embodiment, each Fuse Type device represents one bit of binary data, the Fuse Type device
Whether generation fusing can be embodied by the variation of its resistance value, fed back in circuit, be can be exchanged into two by respective handling
Binary data 1 or 0, to realize the store function of data.For example, when the Fuse Type device fuses, two are represented
Binary data 0；When not fusing, binary data 1 is represented.Preferably, the conductive material with nano thread structure is received for silver
Rice noodles, copper nano-wire, nanowires of gold or nickel nano wire.Wherein, the specific number of electrode 13 described in each Fuse Type device
Amount, those skilled in the art may set according to actual needs, and present embodiment is not construed as limiting this.
In order to improve the electric property of the Fuse Type printed memory, the substrate 11 should have good insulating properties
Energy.Preferably, the material of the substrate 11 is polyethylene terephthalate (PET), polyethylene naphthalate (PEN)
Or the printed electronics device such as polyimides (PI) often uses substrate.Those skilled in the art can also select other according to actual needs
Non-conductive hard material is as substrate 11.
In order to ensure the fusing performance of Fuse Type printed memory, it is preferred that the gap width between adjacent electrode 13 is
100 μm~1000 μm.Gap area between adjacent two electrode 13 is fuse function area, i.e., the width in the described fuse function area
It is 100 μm~1000 μm.
In order to further decrease thermal losses, the heat insulation packed layer 14 preferably using with good insulation performance and every
The material of hot property.Specifically, the material of the heat insulation packed layer 14 is polytetrafluoroethylene (PTFE), polystyrene or polyurethane.
Moreover, present embodiment additionally provides a kind of preparation method of Fuse Type printed memory, and attached drawing 3 is
The preparation method flow chart of Fuse Type printed memory in first specific implementation mode of the invention, attached drawing 4A-4D are the present invention the
The preparation method technical process vertical view of Fuse Type printed memory in one specific implementation mode, attached drawing 5A-5D is this hair
The preparation method technical process side view of Fuse Type printed memory in bright first specific implementation mode.As Fig. 3,4A-4D,
Shown in 5A-5D, the preparation method for the Fuse Type printed memory that present embodiment provides includes the following steps：
Step S31 provides a substrate 11, as shown in Fig. 4 A, 5A.The substrate 11 is cleaned, and carries out oxygen etc. from
Sub (Plasma) processing.
Step S32, using bar coating process by nano wire conductive material solution coating to 11 surface of the substrate, with shape
At fuse function material layer 12, as shown in Fig. 4 B, 5B.Specifically, using bar coating process, on 11 surface of the substrate
First end is coated with suitable nano wire conductive material solution, band textured bar in surface is coated with from 11 surface of the substrate molten
The first end of liquid is drawn to the second end opposite with the first end so that nano wire conductive material solution is evenly distributed in institute
11 surface of substrate is stated, while making nano wire that there is more uniform directionality to arrange；It is made annealing treatment after the completion of coating, with
The solvent in nano wire conductive material solution is dried, leaves the conductive material of nano thread structure to form fuse function material layer
12。
Step S33 prepares multiple electrodes 13 on 12 surface of fuse function material layer, has one between adjacent electrode 13
Gap constitutes fuse function area, as shown in Fig. 4 C, 5C by the fuse function material layer 12 that the gap exposes.It is specific next
It says, using gluing process, silk-screen printing technique, evaporation process or InkJet printing processes, the electrode 13 will be used to prepare
Conductive material is prepared in the fuse function material layer 12, and has a gap between adjacent electrode 13.Wherein, the fusing
A part of the part covered by the electrode 13 in function material layer 12 as electrode；The fuse function material layer 12 is located at
The part covered in the gap, not by the electrode 13 constitutes fuse function area, the fuse function in the fuse function area
Material layer 12 causes rising to for the Fuse Type device resistance value suitable for that can fuse under the action of electric current.Wherein, the electricity
Pole 13 may be used conductive silver paste, conductive copper paste, conducting aluminum paste, electric-conducting nickel paste, conductive carbon paste or conductive gold paste and be fabricated；Or
Person, the electrode 13 may be used the conductive metals such as nickel, lead, gold, silver, aluminium or copper and be fabricated；Alternatively, the electrode 13 can be with
It is fabricated using conductive oxides such as ruthenium-oxide, manganese oxide, lead oxide or nickel oxide；Alternatively, the electrode 13 can be adopted
It is fabricated with conductive materials such as carbon black or graphenes.
Step S34 forms the heat insulation packed floor 14 in a covering fuse function area, such as Fig. 4 D, 5D in the gap
It is shown.Specifically, using techniques such as dispensing, bar coating, blade coatings, by heat insulation packed material preparation between adjacent electrode
In gap, and cover the fuse function area；It is made annealing treatment later so that heat insulation packed material solidification forms heat-insulated envelope
Fill layer 14.Later, those skilled in the art can cut structure shown in Fig. 4 D, Fig. 5 D according to the needs of actual use
It cuts, obtains the independent Fuse Type printed memory of corresponding size.
The Fuse Type printed memory and preparation method thereof that present embodiment provides, using with nano thread structure
Conductive material manufactures fuse function material layer, and the reguline metal relative to homogeneity has lower fusing point；With nano thread structure
Conductive material between there is the structure that involves that overlapped, contact resistance is larger herein, and more heat is will produce according to Joule's law
Amount, is more easy to fuse；Nano wire conductive material due to its Nano grade diameter, under this microstate, electromigration effect
Nano wire can be made to be more easy to fuse.Therefore, nano wire conductive material can promote the generation of fusing to greatest extent, and circuit is made to exist
It fuses under lower voltage, current conditions.It is molten to optimize meanwhile by covering heat insulation packed floor in fuse function area
Disconnected characteristic.According to Joule's law, electric current by when conductor will produce heat, heat causes the rising of conductor temperature, reaches fusing point
It fuses afterwards.Heat insulation packed floor is covered in fuse function area can effectively reduce thermal losses, further promote the hair of fusing
It is raw, shorten fusing time.
Embodiment 1
Present embodiments provide a kind of preparation method of Fuse Type printed memory.The present embodiment uses poly terephthalic acid
Glycol ester (PET) is used as substrate, and nano silver wire is as the conduction material with nano thread structure for preparing fuse function material layer
Material, conductive silver paste is as the material for preparing electrode, and polytetrafluoroethylene (PTFE) is as the material for preparing heat insulation packed layer.Specifically, originally
The preparation method for the Fuse Type printed memory that embodiment provides, includes the following steps：
(1) PET film of a 5mm × 10mm is provided as substrate, cleans the surface of substrate described in simultaneously wiped clean；
(2) it is coated with appropriate nano silver wire solution in the first end of the substrate, and utilizes bar coating process, described in dragging
Bar is moved to the second end opposite with the first end from the first end of the substrate so that nano silver wire is uniformly layered on institute
Substrate surface is stated, silver nanowire layer (i.e. fuse function material layer) is formed；
(3) dispenser is utilized, by conductive silver paste dispensing in the nano silver wire layer surface, forms multiple electrodes, and adjacent
The gap that a spacing is 100 μm~1000 μm is constituted between electrode；It is made of the silver nanowire layer that the gap exposes molten
Disconnected functional areas；
(4) dispenser is utilized, polytetrafluoroethylsolution solution is prepared in the gap to and is covered the fuse function area,
To form one layer of stable heat insulation packed layer；
(5) structure prepared to step (4) is cut, and forms the independent Fuse Type printed memory of corresponding size.Extremely
This, prepared by the Fuse Type printed memory based on nano-material completes.It in use, will be with a fuse function area both ends
Adjacent electrode is respectively connected to the anode of circuit, cathode, and gives specific voltage.After electric current is by the fuse function area,
Silver nanowire layer in fuse function area fuses, and is risen to so as to cause resistance value.
Second specific implementation mode
Present embodiment provides a kind of Fuse Type printed memory, and attached drawing 6 is the second specific embodiment party of the invention
The overlooking structure diagram of Fuse Type printed memory in formula.For with the first specific implementation mode something in common, this is specific real
The mode of applying repeats no more, below the difference of main narration and the first specific implementation mode.
As shown in fig. 6, present embodiment provide Fuse Type printed memory, including substrate 21 and be located at substrate 21
Multiple Fuse Type devices on surface, and multiple Fuse Type devices are arranged in array on 21 surface of the substrate；Wherein, each described
Fuse Type device includes：Fuse function material layer 22 is set to 21 surface of the substrate, and the fuse function material layer 22 is adopted
It is fabricated with the conductive material with nano thread structure；Multiple electrodes 23 are set to 22 surface of fuse function material layer,
There is a gap between adjacent electrode 23, fuse function area is constituted by the fuse function material layer 22 that the gap exposes；
Heat insulation packed layer 24 is placed in the gap and covers the fuse function area.Each Fuse Type device represents binary one
Position data form Fuse Type device array by the multiple Fuse Type devices being arranged in array in the setting of 21 surface of the substrate,
The storage that multi-bit data may be implemented, to effectively increase the memory capacity of Fuse Type printed memory.
In order to avoid influencing each other for multiple Fuse Type devices, it is preferred that as shown in fig. 6, present embodiment provides
Fuse Type device further include patterned dielectric isolation layer 25；There are multiple ditches being mutually parallel in the dielectric isolation layer 25
Road, the raceway groove is for accommodating Fuse Type device, to realize the mutually isolated of Fuse Type device in adjacent channel.Wherein, each
One or more Fuse Type device can be accommodated in raceway groove.The dielectric isolation layer 25 preferably uses the good material of insulation performance
Material is prepared, such as resinae, rubber, shellac class, polytetrafluoroethylene (PTFE), polystyrene, dimethyl silicone polymer etc..It is more excellent
Choosing, the dielectric isolation layer 25 includes a plurality of insulating isolation belt being mutually parallel, and it is wide to form one between adjacent insulating isolation belt
Degree is 100 μm~1000 μm raceway grooves.It is furthermore preferred that the dielectric isolation layer 25 include it is a plurality of be mutually parallel it is linear insulate every
From band.
Moreover, present embodiment additionally provides a kind of preparation method of Fuse Type printed memory, including such as
Lower step：
Step S61 provides a substrate 21.The substrate 21 is cleaned, and carries out oxygen plasma (Plasma) processing.
Step S62, in 21 surface of substrate formation, one patterned dielectric isolation layer 25, the dielectric isolation layer 25
With multiple raceway grooves being mutually parallel.Specifically, using gluing process, patterned insulation is prepared on 21 surface of the substrate
Separation layer 25, the dielectric isolation layer 25 include a plurality of insulating isolation belt being mutually parallel, and the length of the insulating isolation belt can
To be configured according to actual needs, such as it is adjusted to 20mm or more, to accommodate more Fuse Type device in a raceway groove；And
Annealing solidification is carried out after the completion of dispensing.
Step S63, using bar coating process by nano wire conductive material solution coating to the raceway groove, in described
Fuse function material layer 22 is formed in raceway groove.Specifically, it is prepared and is fused on 21 surface of the substrate using bar coating method
Function material layer 22, by nano wire conductive material solution coating at 21 surface of the substrate and the raceway groove first end, dragging
Bar moves on 21 surface of the substrate as the opposite second end of the first end along the length direction of the raceway groove so that receives
Rice noodles conductive material solution is evenly spaced in the raceway groove, formation be evenly distributed, the arrangement state that directionality is more uniform；It applies
It is made annealing treatment after the completion of cloth so that the solvent volatilization in the nano wire conductive material solution leaves nano thread structure
Conductive material is to form fuse function material layer 22.
Step S64 prepares multiple electrodes 23 on 22 surface of fuse function material layer, has one between adjacent electrode 23
Gap constitutes fuse function area by the fuse function material layer 22 that the gap exposes.Specifically, dispensing work is utilized
Skill, silk-screen printing technique, evaporation process or InkJet printing processes prepare the conductive material for being used to prepare the electrode 23
In the fuse function material layer 22 in the raceway groove, and there is a gap between adjacent electrode 23.Wherein, the fusing work(
A part of the part covered by the electrode 23 in energy material layer 22 as electrode；The fuse function material layer 22 is located at institute
It states the part covered in gap, not by the electrode 23 and constitutes fuse function area, the fuse function material in the fuse function area
The bed of material 22 causes rising to for the Fuse Type printed memory resistance value suitable for that can fuse under the action of electric current.
Step S65 forms the heat insulation packed floor 24 in a covering fuse function area in the gap.Specifically,
Using techniques such as dispensing, bar coating, blade coatings, by gap of the heat insulation packed material preparation between adjacent electrode, and cover
The fuse function area；It is made annealing treatment later so that heat insulation packed material solidification forms heat insulation packed layer 24.Later, originally
Field technology personnel can be according to the needs of actual use, and the structure to being covered with heat insulation packed layer 24 is sheared, and phase is obtained
Answer the independent Fuse Type printed memory of size.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of Fuse Type printed memory, which is characterized in that at least one Fuse Type including substrate and positioned at substrate surface
Device；Wherein, the Fuse Type device includes：
Fuse function material layer is set to the substrate surface, and the fuse function material layer is used with nano thread structure
Conductive material be fabricated；
Multiple electrodes are set to the fuse function material surface, have a gap between adjacent electrode, sudden and violent by the gap
The fuse function material layer of dew constitutes fuse function area；
Heat insulation packed layer is placed in the gap and covers the fuse function area.
2. Fuse Type printed memory according to claim 1, which is characterized in that the material of the substrate is poly- to benzene two
Formic acid glycol ester, polyethylene naphthalate or polyimides.
3. Fuse Type printed memory according to claim 1, which is characterized in that the gap width between adjacent electrode is
100 μm~1000 μm.
4. Fuse Type printed memory according to claim 1, which is characterized in that the conductive material with nano thread structure
For nano silver wire, copper nano-wire, nanowires of gold or nickel nano wire.
5. Fuse Type printed memory according to claim 1, which is characterized in that the material of the heat insulation packed layer is poly-
Tetrafluoroethene, polystyrene or polyurethane.
6. Fuse Type printed memory according to claim 1, which is characterized in that at least one Fuse Type device includes more
A Fuse Type device, and multiple Fuse Type devices are arranged in array in the substrate surface.
7. Fuse Type printed memory according to claim 6, which is characterized in that further include patterned be dielectrically separated from
Layer；There are multiple raceway grooves being mutually parallel, the raceway groove is for accommodating Fuse Type device, to realize phase in the dielectric isolation layer
Fuse Type device is mutually isolated in adjacent raceway groove.
8. Fuse Type printed memory according to claim 7, which is characterized in that the dielectric isolation layer includes a plurality of phase
Mutually parallel insulating isolation belt, it is 100 μm~1000 μm raceway grooves to form a width between adjacent insulating isolation belt.
9. a kind of preparation method of Fuse Type printed memory, which is characterized in that include the following steps：
One substrate is provided；
Using bar coating process by nano wire conductive material solution coating to the substrate surface, to form fuse function material
Layer；
Multiple electrodes are prepared in the fuse function material surface, there is a gap between adjacent electrode, and by the gap
The exposed fuse function material layer constitutes fuse function area；
The heat insulation packed floor in a covering fuse function area is formed in the gap.
10. the preparation method of Fuse Type printed memory according to claim 9, which is characterized in that further include walking as follows
Suddenly：
In the substrate surface a patterned dielectric isolation layer is formed, there is in the dielectric isolation layer multiple be mutually parallel
Raceway groove；
Using bar coating process by nano wire conductive material solution coating to the raceway groove, melted with being formed in the raceway groove
Disconnected function material layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810116634.1A CN108364669A (en) | 2018-02-06 | 2018-02-06 | Fuse Type printed memory and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810116634.1A CN108364669A (en) | 2018-02-06 | 2018-02-06 | Fuse Type printed memory and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108364669A true CN108364669A (en) | 2018-08-03 |
Family
ID=63004568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810116634.1A Pending CN108364669A (en) | 2018-02-06 | 2018-02-06 | Fuse Type printed memory and preparation method thereof |
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Citations (3)
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| CN102738114A (en) * | 2011-04-11 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Non-salicide polysilicon fuse |
| CN105161617A (en) * | 2015-09-23 | 2015-12-16 | 复旦大学 | Resistive random access memory with planar structure and manufacturing method thereof |
| CN105990519A (en) * | 2015-02-05 | 2016-10-05 | 中国科学院微电子研究所 | Nonvolatile resistive random access memory device and preparation method thereof |
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2018
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|---|---|---|---|---|
| CN102738114A (en) * | 2011-04-11 | 2012-10-17 | 台湾积体电路制造股份有限公司 | Non-salicide polysilicon fuse |
| CN105990519A (en) * | 2015-02-05 | 2016-10-05 | 中国科学院微电子研究所 | Nonvolatile resistive random access memory device and preparation method thereof |
| CN105161617A (en) * | 2015-09-23 | 2015-12-16 | 复旦大学 | Resistive random access memory with planar structure and manufacturing method thereof |
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Application publication date: 20180803 |