CN108346572A - The surface treatment method of silicon oxide film and silicon nitride film - Google Patents
The surface treatment method of silicon oxide film and silicon nitride film Download PDFInfo
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- CN108346572A CN108346572A CN201810134901.8A CN201810134901A CN108346572A CN 108346572 A CN108346572 A CN 108346572A CN 201810134901 A CN201810134901 A CN 201810134901A CN 108346572 A CN108346572 A CN 108346572A
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- silicon nitride
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 102
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004381 surface treatment Methods 0.000 title claims abstract description 41
- 239000007789 gas Substances 0.000 claims abstract description 149
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 238000005530 etching Methods 0.000 claims abstract description 105
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 40
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001257 hydrogen Substances 0.000 claims abstract description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052786 argon Inorganic materials 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 claims 4
- 239000008246 gaseous mixture Substances 0.000 claims 2
- 230000008719 thickening Effects 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 6
- 239000000047 product Substances 0.000 description 17
- 230000008439 repair process Effects 0.000 description 13
- 239000007795 chemical reaction product Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000009418 renovation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000338 in vitro Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- HYXIRBXTCCZCQG-UHFFFAOYSA-J [C+4].[F-].[F-].[F-].[F-] Chemical compound [C+4].[F-].[F-].[F-].[F-] HYXIRBXTCCZCQG-UHFFFAOYSA-J 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Drying Of Semiconductors (AREA)
Abstract
A kind of surface treatment method of silicon oxide film and silicon nitride film, includes the following steps：In vacuum chamber, ionization for the first time is carried out to the first mixed gas and is operated, the first plasma is obtained, using the first plasma to the silicon oxide film and silicon nitride film progress first time etching operation on substrate；First mixed gas is oxygen and carbon tetrafluoride, and the first mixed gas air inlet corresponds to the center of substrate；In vacuum chamber, second of ionization is carried out to the second mixed gas and is operated, the second plasma is obtained, using the second plasma to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Second mixed gas is carbon fluorine gas, hydrogen and argon gas, four corners one-to-one correspondence of four the second mixed gas air inlets and substrate.Above-mentioned surface treatment method can solve the problems, such as silicon oxide film and silicon nitride film layer thickening, more plating problems preferably so that the silicon oxide film and silicon nitride film of substrate surface are further etched reparations.
Description
Technical field
The present invention relates to display equipment manufacturing technology fields, more particularly to the surface of a kind of silicon oxide film and silicon nitride film
Processing method.
Background technology
With the development of science and technology, LTPS (Low Temperature Poly-silicon, low-temperature polysilicon silicon technology)
Higher and higher to etching pattern required precision in production, the corresponding film layer structure also the next complicated, current general circuit pattern system
As flow, to complete one of pattern production process, wanted to obtain design by film forming-imaging-etching-demoulding
Etching pattern.
However, in film forming SiN2(silicon nitride) and/or SiO2In (silica) film production process, it may appear that because of process/equipment
The problems such as caused silicon oxide film and/or silicon nitride film layer thicken, or because operational issue leads to silicon oxide film and silicon nitride film
Layer there are problems that plating more.The film layer of thickening or the film layer more plated can reduce product yield, and film layer thickening can influence subsequent etching
Time, cause to occur remaining when follow-up normal etching or etched membrane layer be not in place, quality problems occur so as to cause product, very
To the problem of scrapping, increase manufacturing cost on foot.And film thickness is excessively high, also results in device circuitry characteristic and generates variation, it is such as parasitic
Capacitance, insulating passivation layer ability etc., can seriously affect product yield so that design requirement is not achieved in product.And silicon oxide film and
It is, because that cannot reprocess, to often result in production because operation error or board failure cause to have plated a tunic layer more that silicon nitride film film layer is plated more
Product are scrapped, and product yield is influenced, and improve the manufacturing cost of product.
Invention content
Based on this, it is necessary to which providing one kind can solve the problems, such as that silicon oxide film and silicon nitride film layer thicken, can solve oxygen
The preferable silicon oxide film of film surface uniformity and silicon nitride film after SiClx film and silicon nitride film layer plate problem more and repair
Surface treatment method.
A kind of surface treatment method of silicon oxide film and silicon nitride film, includes the following steps：
In vacuum chamber, ionization for the first time is carried out to the first mixed gas and is operated, the first plasma is obtained, using institute
The first plasma is stated to the silicon oxide film and silicon nitride film progress first time etching operation on substrate；Wherein, described first is mixed
It is oxygen and carbon tetrafluoride to close gas, is provided with the first mixed gas air inlet on the vacuum chamber madial wall, described first
Mixed gas air inlet corresponds to the center of the substrate；
In vacuum chamber, second of ionization is carried out to the second mixed gas and is operated, the second plasma is obtained, using institute
The second plasma is stated to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Wherein, described second is mixed
It is carbon fluorine gas, hydrogen and argon gas to close gas, is arranged on the vacuum chamber madial wall there are four the second mixed gas air inlet,
Four corners of four the second mixed gas air inlets and the substrate correspond.
The first time etching operation etches on the substrate 65%~75% region in one of the embodiments,
Second of etching operation etches the region of remainder on the substrate.
In one of the embodiments, on the first time etching operation etch substrate 70% region, described second
Etching operation etches the region of remainder on the substrate.
It is C that the carbon fluorine gas, which is the carbon fluorine gas, in one of the embodiments,2H5、C2HF5、C4F8、C5F8、CHF3
And CH2F2At least one of.
In one of the embodiments, in first mixed gas, the flow of the oxygen be 20sccm~
The flow of 200sccm, the carbon tetrafluoride are 300~2000sccm.
In one of the embodiments, in second mixed gas, the flow of the carbon fluorine gas be 80sccm~
The flow of 200sccm, the hydrogen are 20sccm~60sccm, and the flow of the argon gas is 100sccm~300sccm.
In one of the embodiments, in the first time ionization operation, the indoor pressure of vacuum chamber is 1.33 pas.
In one of the embodiments, in second of the ionization operation, the indoor pressure of vacuum chamber is 5.32 pas.
In one of the embodiments, after second of etching operation, the surface treatment method further include as
Lower step：To the silicon oxide film and silicon nitride film progress dilute hydrogen fluoride acid water washing operations on substrate.
The mass concentration of hydrofluoric acid is 0.1%-1% in the diluted hydrofluoric acid in one of the embodiments,.
The surface treatment method of above-mentioned silicon oxide film and silicon nitride film, by using first plasma on substrate
Silicon oxide film and silicon nitride film carry out first time etching operation so that the silicon oxide film and silicon nitride film of substrate surface are quickly
Be etched reparation, can shorten etch period.By using second plasma on substrate silicon oxide film and nitridation
Silicon fiml carries out second of etching operation, can be preferably so that the silicon oxide film and silicon nitride film of substrate surface are further carved
Erosion is repaired, and can solve the problems, such as silicon oxide film and silicon nitride film layer thickening, more plating problems.The of carbon fluorine gas, hydrogen and argon gas
Two mixed gas form CF through ionizationx +、F+、H+、Ar+Equal particles, F+Presence Si can be caused largely to etch, by be added hydrogen,
The H generated after ionization+With F+In conjunction with largely consuming F+, etching selection ratio is improved, it is relatively good that film quality uniformity can be formed
Film layer so that the film surface after reparation is more uniform.Especially, the first mixed gas air inlet corresponds to the substrate
Center, the etch rate that the silicon oxide film of substrate intermediate region and silicon nitride film be etched can be made to accelerate, and substrate
The etch rate that the silicon oxide film and silicon nitride film of surrounding are etched is slower；By by four the second mixed gas air inlets
It is corresponded with four corners of the substrate so that the second mixed gas comes out from surrounding areole, can make peripheral regions
Etch rate is accelerated, and intermediate region etch rate is slower；By corresponding to institute in combination with the first mixed gas air inlet
It states the center of substrate and corresponds four corners of four the second mixed gas air inlets and the substrate, energy
Enough the advantages of combining the two, solve to etch because of etch rate unevenness equal so that whole etching is more uniform
The poor problem of even property meets renovation technique requirement so that the film surface after reparation to preferably improve etching homogeneity
Uniformity is preferable.It is to be particularly noted that rehabilitation cost, compared with scrap cost, cost can save 80% or more.
Description of the drawings
Fig. 1 be an embodiment of the present invention silicon oxide film and silicon nitride film surface treatment method the step of scheme；
Fig. 2 is the signal of the silicon oxide film of an embodiment of the present invention and the substrate in the surface treatment method of silicon nitride film
Figure；
Fig. 3 is surface treatment method treated schematic diagram of the sample under Electronic Speculum of the embodiment of the present invention 1；
Fig. 4 is surface treatment method treated schematic diagram of the sample under Electronic Speculum of the embodiment of the present invention 1；
Fig. 5 is surface treatment method treated the sample of the embodiment of the present invention 1 using the number of results after calibrator test
According to figure；
Fig. 6 is surface treatment method treated schematic diagram of the sample under Electronic Speculum of the embodiment of the present invention 2；
Fig. 7 is surface treatment method treated schematic diagram of the sample under Electronic Speculum of the embodiment of the present invention 2.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose of providing these embodiments is that making to understand more the disclosure
Add thorough and comprehensive.Certainly, they are merely examples, and is not intended to limit the present invention.In addition, the present invention can be in difference
Repeat reference numerals and/or letter in example.This repetition is for purposes of simplicity and clarity, itself not indicate to be discussed
Relationship between various embodiments and/or setting.It should be noted that when element is referred to as " being fixed on " another element, it
It can be directly on another element or there may also be elements placed in the middle.When an element be considered as " connection " another
Element, it can be directly to another element or may be simultaneously present centering elements.Term as used herein " is hung down
It is straight ", " horizontal ", "left", "right" and similar statement for illustrative purposes only, be not offered as being uniquely to implement
Mode.In the description of the present invention, it should be noted that unless otherwise specified and limited, term " installation ", " connects " connected "
Connect " it shall be understood in a broad sense, for example, it may be mechanical connection or electrical connection, can also be the connection inside two elements, Ke Yishi
It is connected directly, can also indirectly connected through an intermediary, for the ordinary skill in the art, it can be according to specific
Situation understands the concrete meaning of above-mentioned term.In addition, term " first ", " second " are used for description purposes only, and should not be understood as
It indicates or implies relative importance or implicitly indicate the quantity of indicated technical characteristic." first ", " are defined as a result,
Two " feature can explicitly or implicitly include at least one of the features.In the description of invention, the meaning of " plurality " is extremely
It is two few, such as two, three etc., unless otherwise specifically defined.In the description of the present invention, " several " are meant that
It is at least one, such as one, two etc., unless otherwise specifically defined.Unless otherwise defined, used herein all
Technical and scientific term have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.Made herein
Term is intended merely to the purpose of description specific embodiment, it is not intended that in the limitation present invention.Art used herein
Language " and/or " include one or more relevant Listed Items any and all combinations.
For example, the surface treatment method of a kind of silicon oxide film and silicon nitride film, includes the following steps：In vacuum chamber,
Ionization operation for the first time is carried out to the first mixed gas, the first plasma is obtained, using first plasma to substrate
On silicon oxide film and silicon nitride film carry out first time etching operation；Wherein, first mixed gas is oxygen and tetrafluoride
Carbon is provided with the first mixed gas air inlet on the vacuum chamber madial wall, and the first mixed gas air inlet corresponds to
The center of the substrate；In vacuum chamber, second ionization is carried out to the second mixed gas and is operated, obtain second it is equal from
Daughter, using second plasma to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Wherein,
Second mixed gas is carbon fluorine gas, hydrogen and argon gas, and there are four the second mixing for setting on the vacuum chamber madial wall
Four corners of gas inlet, four the second mixed gas air inlets and the substrate correspond.For example, the oxygen
SiClx film and silicon nitride film are the silicon oxide film or/and silicon nitride film formed in substrate surface.It should be noted that how in base
Silicon oxide film or/and silicon nitride film are formed on plate, refer to the prior art, and details are not described herein by the application.
In order to further illustrate the surface treatment method of above-mentioned silicon oxide film and silicon nitride film, another example is please to join
Fig. 1 is read, the surface treatment method of silicon oxide film and silicon nitride film includes the following steps：
S110：In vacuum chamber, ionization for the first time is carried out to the first mixed gas and is operated, the first plasma is obtained,
Using first plasma to the silicon oxide film and silicon nitride film progress first time etching operation on substrate；Wherein, described
First mixed gas is oxygen and carbon tetrafluoride, is provided with the first mixed gas air inlet on the vacuum chamber madial wall, asks
In conjunction with Fig. 2, the first mixed gas air inlet corresponds to the center 31 of the substrate 30；In other words, from the vacuum
On chamber madial wall respectively at the second mixed gas air inlet of one-to-one four of four corners of the substrate
Simultaneously or separately input second mixed gas.
In the present embodiment, by using first plasma on substrate silicon oxide film and silicon nitride film carry out the
Etching operation so that the silicon oxide film and silicon nitride film of substrate surface are etched reparation quickly, when can shorten etching
Between.Referring to Fig. 2, it is schematic diagram of a substrate, substrate 30 have center 31 and four corner location 32a, 32b,
32c and 32d.In the present embodiment, the center of the air inlet counterpart substrate of the first mixed gas.Certainly, the first mixed gas
Air inlet it can be appreciated that nozzle.
In one embodiment, in first mixed gas, the flow of the oxygen is 20sccm~200sccm, described four
The flow of fluorocarbons is 300~2000sccm, so, it is possible preferably to form first plasma, described the of formation
One plasma can be preferably to the silicon oxide film and silicon nitride film progress first time etching operation on substrate so that substrate table
The silicon oxide film and silicon nitride film in face are quickly etched reparation, can shorten etch period, and make subsequent processing film layer more
It is uniform.Preferably, in first mixed gas, the flow of the oxygen is 50sccm, and the flow of the carbon tetrafluoride is
450sccm so, it is possible preferably to form first plasma, and first plasma of formation can be preferably
To the silicon oxide film and silicon nitride film progress first time etching operation on substrate so that the silicon oxide film and silicon nitride of substrate surface
Film is quickly etched reparation, can shorten etch period, and subsequent processing film layer is more uniformly distributed.
In one embodiment, the radio-frequency signal source (RF Source) for forming first plasma is 4000W-7000W,
Rf bias (RF Bias) is 2000W-4000W, so, it is possible preferably to form the first plasma, described the first of formation
Plasma can be preferably to the silicon oxide film and silicon nitride film progress first time etching operation on substrate so that substrate surface
Silicon oxide film and silicon nitride film be quickly etched reparation, etch period can be shortened, and make subsequent processing film layer more
Uniformly.Preferably, the radio-frequency signal source (RF Source) for forming second plasma is 7000W, rf bias (RF
Bias it is) 3000W, so, it is possible preferably to form the first plasma, first plasma of formation can be preferably
To the silicon oxide film and silicon nitride film progress first time etching operation on substrate so that the silicon oxide film and silicon nitride of substrate surface
Film is quickly etched reparation, can shorten etch period, and subsequent processing film layer is more uniformly distributed.
In one embodiment, in the first time ionization operation, the indoor pressure of vacuum chamber is 1.33 pas, in this way, energy
Enough preferably formation first is equal in vitro, and can preferably carry out the first time etching operation.
For example, the first time etching operation is RIE (Reactive Ion Etching, reactive ion etching) or ICP
(inductive coupled plasma, inductive coupling plasma etching).It so, it is possible preferably to carry out first time etching
Operation.
S120：In vacuum chamber, second of ionization is carried out to the second mixed gas and is operated, the second plasma is obtained,
Using second plasma to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Wherein, described
Second mixed gas is carbon fluorine gas, hydrogen and argon gas, and there are four the second mixed gas for setting on the vacuum chamber madial wall
Four corners (32a, 32b, 32c and 32d) of air inlet, four the second mixed gas air inlets and the substrate 30 are one by one
It is corresponding.
In the present embodiment, by using second plasma on substrate silicon oxide film and silicon nitride film carry out the
Secondarily etched operation, can be preferably so that the silicon oxide film and silicon nitride film of substrate surface be further etched reparation, energy
Enough solve the problems, such as that silicon oxide film and silicon nitride film layer thicken, plate problem more.Second mixed gas of carbon fluorine gas, hydrogen and argon gas
CF is formed through ionizationx +、F+、H+、Ar+Equal particles, F+Presence Si can be caused largely to etch, by be added hydrogen, generated after ionization
H+With F+In conjunction with largely consuming F+, etching selection ratio is improved, the relatively good film layer of uniformity can be formed so that after reparation
Film surface it is more uniform.Certainly, the second mixed gas air inlet in the present embodiment also can be regarded as nozzle.
It is to be particularly noted that when by only with carbon fluorine gas and hydrogen treat, etching ratio is relatively small, still
It is easy so that the membrane uniformity after repairing is poor.In the present embodiment, electrify by using argon gas and carbon fluorine gas and hydrogen one
Second of ionization operation is formed from operation, the second plasma is formed, by using second plasma on substrate
Silicon oxide film and silicon nitride film carry out second of etching operation；In the process, by the way that argon gas is added, F can be further reduced+
Can be further increased by etching ratio, made when to compared to carbon fluorine gas and hydrogen treat is only used only for the etching of non-crystalline silicon
Must be minimum for the damage of substrate and silicon oxide film and silicon nitride film, so that the membrane uniformity after repairing is preferable, it can
Improve product quality.
It should be noted that when in the first etching operation, the first mixed gas air inlet corresponds to the substrate 30
Center 31, the etch rate that the silicon oxide film of substrate intermediate region and silicon nitride film be etched can be made to accelerate, and base
The etch rate that the silicon oxide film and silicon nitride film of plate surrounding are etched is slower.By by four the second mixed gas air inlets
Mouthful with four corners (32a, 32b, 32c and 32d) of the substrate 30 one-to-one correspondence so that the second mixed gas is from surrounding side wall
Hole comes out, and peripheral regions etch rate can be made to accelerate, and intermediate region etch rate is slower；By mixed in combination with described first
It closes gas inlet and corresponds to the center of the substrate and by four the second mixed gas air inlets and the substrate
Four corners correspond, can in conjunction with both the advantages of so that whole etching is more uniform, solve because of etching
The problem that rate is uneven and makes etching homogeneity poor meets renovation technique requirement to preferably improve etching homogeneity,
So that the film surface uniformity after repairing is preferable.
For example, it is C that the carbon fluorine gas, which is the carbon fluorine gas,2H5、C2HF5、C4F8、C5F8、CHF3And CH2F2In at least
It is a kind of.Preferably, the carbon fluorine gas is C2HF5, so, it is possible that the film layers plated or thickeied preferably are carved more
Erosion is repaired, and enables to the film surface uniformity after repairing preferable.
In one embodiment, in second mixed gas, the flow of the carbon fluorine gas is 80sccm~200sccm, institute
The flow for stating hydrogen is 20sccm~60sccm, and the flow of the argon gas is 100sccm~300sccm, be so, it is possible preferably
The second plasma is formed, the film layers that enables to plate more or thicken can preferably be etched reparation, enable to repair
Film surface uniformity afterwards is preferable.Preferably, the flow of the carbon fluorine gas is 100sccm, and the flow of the hydrogen is
50sccm, the flow of the argon gas are 200sccm, so, it is possible preferably to form the second plasma, enable to plate or
The film layer that person thickeies can preferably be etched reparations, enable to the film surface uniformity after reparation preferable.
In one embodiment, the radio-frequency signal source (RF Source) for forming second plasma is 4000W-7000W,
Rf bias (RF Bias) is 1500W-3000W, so, it is possible preferably to form the second plasma, described the second of formation
Plasma can enable to plate more preferably to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate
Or the film layer thickeied can preferably be etched reparations, enable to the film surface uniformity after reparation preferable.Preferably,
The radio-frequency signal source (RF Source) for forming second plasma is 5000W, and rf bias (RF Bias) is 2000W,
It so, it is possible preferably to form the second plasma, second plasma of formation can be preferably to the oxygen on substrate
SiClx film and silicon nitride film carry out second of etching operation, and the film layer that enables to plate more or thicken can preferably be etched
It repairs, enables to the film surface uniformity after repairing more preferable.
In one embodiment, in second of the ionization operation, the indoor pressure of vacuum chamber is 5.32 pas.In this way, energy
Enough preferably formation second is equal in vitro, and can preferably carry out second of etching operation.
For example, second of etching operation is RIE (Reactive Ion Etching, reactive ion etching) or ICP
(inductive coupled plasma, inductive coupling plasma etching).It so, it is possible preferably to carry out second of etching
Operation.
The surface treatment method of above-mentioned silicon oxide film and silicon nitride film, by using first plasma on substrate
Silicon oxide film and silicon nitride film carry out first time etching operation so that the silicon oxide film and silicon nitride film of substrate surface are quickly
Be etched reparation, can shorten etch period.By using second plasma on substrate silicon oxide film and nitridation
Silicon fiml carries out second of etching operation, can be preferably so that the silicon oxide film and silicon nitride film of substrate surface are further carved
Erosion is repaired, and can solve the problems, such as silicon oxide film and silicon nitride film layer thickening, more plating problems.The of carbon fluorine gas, hydrogen and argon gas
Two mixed gas form CF through ionizationx +、F+、H+、Ar+Equal particles, F+Presence Si can be caused largely to etch, by be added hydrogen,
The H generated after ionization+With F+In conjunction with largely consuming F+, etching selection ratio is improved, it is relatively good that film quality uniformity can be formed
Film layer so that the film surface after reparation is more uniform.Especially, the first mixed gas air inlet corresponds to the substrate
Center, the etch rate that the silicon oxide film of substrate intermediate region and silicon nitride film be etched can be made to accelerate, and substrate
The etch rate that the silicon oxide film and silicon nitride film of surrounding are etched is slower；By by four the second mixed gas air inlets
It is corresponded with four corners of the substrate so that the second mixed gas comes out from surrounding areole, can make peripheral regions
Etch rate is accelerated, and intermediate region etch rate is slower；By corresponding to institute in combination with the first mixed gas air inlet
It states the center of substrate and corresponds four corners of four the second mixed gas air inlets and the substrate, energy
Enough the advantages of combining the two, solve to etch because of etch rate unevenness equal so that whole etching is more uniform
The poor problem of even property meets renovation technique requirement so that the film surface after reparation to preferably improve etching homogeneity
Uniformity is preferable.It is to be particularly noted that rehabilitation cost, compared with scrap cost, cost can save 80% or more.
In order to enable the surface treatment method of silicon oxide film and silicon nitride film be applicable in etching object area it is big, that is, be etched
Region accounts for 95% or more entire display screen, and etching repairs repairing for the silicon oxide film that thickness is 400 angstroms -10000 angstroms and silicon nitride film
Multiple, in an embodiment, the first time etching operation etches on the substrate 65%~75% region, second of etching
Operation etches the region of remainder on the substrate.For another example, on the first time etching operation etch substrate 70% region,
Second of etching operation etches the region of remainder on the substrate.It should be noted that first time etching operation is carved
It is 100% that the percentage in the region on erosion substrate and the region on the second etching operation etch substrate, which adds up,.In this way, through reality
It tests, the surface treatment method of silicon oxide film and silicon nitride film can be enable to be applicable in, and etching object area is big, that is, be etched region
95% or more entire display screen is accounted for, etching repairs the reparation of silicon oxide film and silicon nitride film that thickness is 400 angstroms -10000 angstroms.Especially
It should be noted that it is by the first time etching operation etch substrate 70% region, second of etching operation
The region for etching remainder on the substrate enables to the uniformity of film layer after repairing fabulous.It needs to further illustrate
It is, by the duration for controlling the first time etching operation, you can control the first time etching operation and etch the base
Surface area on plate.By the duration for controlling second of etching operation, you can control second of etching behaviour
Make to etch the surface area on the substrate.Certainly, those skilled in the art are according to limited trials and substrate area size
Or pore opening can be set according to actual needs the duration of second of etching operation.
In one embodiment, after the step S110, and before the step 120, i.e., specifically, described
After etching operation, and in second of the ionization operation, the surface treatment side of the silicon oxide film and silicon nitride film
Method further includes following steps：First time air suction process is carried out to vacuum chamber using air pump, so, it is possible preferably to remove film layer
It will produce a large amount of reaction product in first time etching operations so that reaction product is taken out by air pump by main pipeline
Walk, to reduce it is new at membrane material caused by pollute, the influence to product quality can be reduced.For another example, the pumping behaviour
The duration of work is 50 seconds, so, it is possible preferably to remove to will produce in first time etching operations largely to react life
At object.It is to be particularly noted that in large area repair, when first time etching operation, will produce more reaction products,
If be not clean, chamber contamination problem can be caused, while can also influence to repair the uniformity of film layer.By the way that the pumping is grasped
The duration of work is 50 seconds, so, it is possible preferably to remove to will produce in first time etching operations largely to react life
At object so that reaction product is taken away by air pump by main pipeline, to reduce it is new at membrane material caused by pollute, can
Reduce the influence to product quality.
In one embodiment, after second of etching operation, the surface treatment of the silicon oxide film and silicon nitride film
Method further includes following steps：Second of air suction process is carried out to vacuum chamber using air pump, so, it is possible preferably to remove the
The reaction product generated in secondarily etched operating process so that reaction product is taken away by air pump by main pipeline, to subtract
It is polluted caused by less new at membrane material, the influence to product quality can be reduced.For another example, second of air suction process
Duration is 20 seconds~50 seconds, so, it is possible preferably to remove the reaction product generated in second of etching operations.
It should be noted that film layer will produce a large amount of reaction product during being repaired, can largely be led to by air pump
It crosses main pipeline to take away, fraction still can rest on above film layer, if do not removed, can cause dirt at membrane material to new
Dye, influences product quality.In order to preferably remove the reaction product rested on above film layer, in an embodiment, described
After secondarily etched operation, the surface treatment method further includes following steps：To the silicon oxide film and silicon nitride film on substrate
Carry out dilute hydrogen fluoride acid water washing operations.For another example, the mass concentration of hydrofluoric acid is 0.1%-1% in the diluted hydrofluoric acid.For another example, described
The mass concentration of hydrofluoric acid is 0.5%.It so, it is possible preferably to remove the reaction product rested on above film layer.
The surface treatment method of above-mentioned silicon oxide film and silicon nitride film, by using first plasma on substrate
Silicon oxide film and silicon nitride film carry out first time etching operation so that the silicon oxide film and silicon nitride film of substrate surface are quickly
Be etched reparation, can shorten etch period.By using second plasma on substrate silicon oxide film and nitridation
Silicon fiml carries out second of etching operation, can be preferably so that the silicon oxide film and silicon nitride film of substrate surface are further carved
Erosion is repaired, and can solve the problems, such as silicon oxide film and silicon nitride film layer thickening, more plating problems.The of carbon fluorine gas, hydrogen and argon gas
Two mixed gas form CF through ionizationx +、F+、H+、Ar+Equal particles, F+Presence Si can be caused largely to etch, by be added hydrogen,
The H generated after ionization+With F+In conjunction with largely consuming F+, etching selection ratio is improved, it is relatively good that film quality uniformity can be formed
Film layer so that the film surface after reparation is more uniform.Especially, the first mixed gas air inlet corresponds to the substrate
Center, the etch rate that the silicon oxide film of substrate intermediate region and silicon nitride film be etched can be made to accelerate, and substrate
The etch rate that the silicon oxide film and silicon nitride film of surrounding are etched is slower；By by four the second mixed gas air inlets
It is corresponded with four corners of the substrate so that the second mixed gas comes out from surrounding areole, can make peripheral regions
Etch rate is accelerated, and intermediate region etch rate is slower；By corresponding to institute in combination with the first mixed gas air inlet
It states the center of substrate and corresponds four corners of four the second mixed gas air inlets and the substrate, energy
Enough the advantages of combining the two, solve to etch because of etch rate unevenness equal so that whole etching is more uniform
The poor problem of even property meets renovation technique requirement so that the film surface after reparation to preferably improve etching homogeneity
Uniformity is preferable.It is to be particularly noted that rehabilitation cost, compared with scrap cost, cost can save 80% or more.
Continue to be explained the present invention with reference to specific embodiment.
Embodiment 1
Processing sample is because operational issue leads to the sample substrate that silicon oxide film and silicon nitride film layer plate more, wherein on substrate
Form silicon oxide film and silicon nitride film layer.
The surface treatment method of a kind of silicon oxide film and silicon nitride film includes the following steps in vacuum chamber：
Ionization operation for the first time is carried out to the first mixed gas, the first plasma is obtained, using first plasma
Body is to the silicon oxide film and silicon nitride film progress first time etching operation on substrate；Wherein, first mixed gas is oxygen
And carbon tetrafluoride, the first mixed gas air inlet, the first mixed gas air inlet are provided on the vacuum chamber madial wall
Mouth corresponds to the center of the substrate；Wherein, the radio-frequency signal source (RF Source) of formation second plasma is
7000W, rf bias (RF Bias) are 3000W, and in the first time ionization operation, the indoor pressure of vacuum chamber is
1.33 pas, in first mixed gas, the flow of the oxygen is 50sccm, and the flow of the carbon tetrafluoride is 450sccm；
In vacuum chamber, second of ionization is carried out to the second mixed gas and is operated, the second plasma is obtained, using institute
The second plasma is stated to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Wherein, described second is mixed
It is carbon fluorine gas, hydrogen and argon gas to close gas, is arranged on the vacuum chamber madial wall there are four the second mixed gas air inlet,
Four corners of four the second mixed gas air inlets and the substrate correspond, wherein the carbon fluorine gas is
C2HF5, the flow of the carbon fluorine gas is 100sccm, and the flow of the hydrogen is 50sccm, and the flow of the argon gas is
200sccm, the radio-frequency signal source (RF Source) for forming second plasma are 5000W, rf bias (RF Bias)
For 2000W, in second of the ionization operation, the indoor pressure of vacuum chamber is 5.32 pas.
By after reparation silicon oxide film and silicon nitride film layer it is electric under the microscope, result is as shown in Figure 3 and Figure 4.
By Fig. 3 repair after film layer picture pattern it can be seen from repair after membrane uniformity it is preferable, although foraminate flaw,
Do not influence film performance.As seen from Figure 4, thicknesses of layers disclosure satisfy that technological requirement after reparation.
In order to further test the homogeneity of the film layer after repairing, the film layer sampling site test after reparation is repaiied using calibrator
The thickness of film layer after multiple, the results are shown in Figure 5, is thickness test result of the calibrator to the film layer after reparation, by 25
The test result of point is it is found that its unifit (UNI in figure, equally distributed parameter) is 9.4742, the film layer after surface reconditioning
Uniformity is preferable, disclosure satisfy that technological requirement needs.AVG is average, and MAX is maximum value.
Embodiment 2
Handle sample be because of the process/equipment the problems such as caused by the sample substrate that thickeies of silicon oxide film and silicon nitride film layer,
Wherein silicon oxide film and silicon nitride film layer are formd on substrate.
The surface treatment method of a kind of silicon oxide film and silicon nitride film includes the following steps in vacuum chamber：
Ionization operation for the first time is carried out to the first mixed gas, the first plasma is obtained, using first plasma
Body is to the silicon oxide film and silicon nitride film progress first time etching operation on substrate；Wherein, first mixed gas is oxygen
And carbon tetrafluoride, the first mixed gas air inlet, the first mixed gas air inlet are provided on the vacuum chamber madial wall
Mouth corresponds to the center of the substrate；Wherein, the radio-frequency signal source (RF Source) of formation second plasma is
7000W, rf bias (RF Bias) are 3000W, and in the first time ionization operation, the indoor pressure of vacuum chamber is
1.33 pas, in first mixed gas, the flow of the oxygen is 50sccm, and the flow of the carbon tetrafluoride is 450sccm；
In vacuum chamber, second of ionization is carried out to the second mixed gas and is operated, the second plasma is obtained, using institute
The second plasma is stated to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Wherein, described second is mixed
It is carbon fluorine gas, hydrogen and argon gas to close gas, is arranged on the vacuum chamber madial wall there are four the second mixed gas air inlet,
Four corners of four the second mixed gas air inlets and the substrate correspond, wherein the carbon fluorine gas is
C2HF5, the flow of the carbon fluorine gas is 100sccm, and the flow of the hydrogen is 50sccm, and the flow of the argon gas is
200sccm, the radio-frequency signal source (RF Source) for forming second plasma are 5000W, rf bias (RF Bias)
For 2000W, in second of the ionization operation, the indoor pressure of vacuum chamber is 5.32 pas.
By after reparation silicon oxide film and silicon nitride film layer it is electric under the microscope, result is as shown in Figure 6 and Figure 7.
By Fig. 6 repair after film layer picture pattern it can be seen from repair after membrane uniformity it is preferable, although foraminate flaw,
Do not influence film performance.As seen from Figure 7, thicknesses of layers disclosure satisfy that technological requirement after reparation.
The surface treatment method of above-mentioned silicon oxide film and silicon nitride film, by using first plasma on substrate
Silicon oxide film and silicon nitride film carry out first time etching operation so that the silicon oxide film and silicon nitride film of substrate surface are quickly
Be etched reparation, can shorten etch period.By using second plasma on substrate silicon oxide film and nitridation
Silicon fiml carries out second of etching operation, can be preferably so that the silicon oxide film and silicon nitride film of substrate surface are further carved
Erosion is repaired, and can solve the problems, such as silicon oxide film and silicon nitride film layer thickening, more plating problems.The of carbon fluorine gas, hydrogen and argon gas
Two mixed gas form CF through ionizationx +、F+、H+、Ar+Equal particles, F+Presence Si can be caused largely to etch, by be added hydrogen,
The H generated after ionization+With F+In conjunction with largely consuming F+, etching selection ratio is improved, it is relatively good that film quality uniformity can be formed
Film layer so that the film surface after reparation is more uniform.Especially, the first mixed gas air inlet corresponds to the substrate
Center, the etch rate that the silicon oxide film of substrate intermediate region and silicon nitride film be etched can be made to accelerate, and substrate
The etch rate that the silicon oxide film and silicon nitride film of surrounding are etched is slower；By by four the second mixed gas air inlets
It is corresponded with four corners of the substrate so that the second mixed gas comes out from surrounding areole, can make peripheral regions
Etch rate is accelerated, and intermediate region etch rate is slower；By corresponding to institute in combination with the first mixed gas air inlet
It states the center of substrate and corresponds four corners of four the second mixed gas air inlets and the substrate, energy
Enough the advantages of combining the two, solve to etch because of etch rate unevenness equal so that whole etching is more uniform
The poor problem of even property meets renovation technique requirement so that the film surface after reparation to preferably improve etching homogeneity
Uniformity is preferable.It is to be particularly noted that rehabilitation cost, compared with scrap cost, cost can save 80% or more.
Surface treatment method provided by the invention is suitable for the dry etching large area film layer reparation of 2.5 generation lines to 6 generation lines,
And rehabilitation cost saves 80 or more percent compared with product rejection cost.Surface treatment method provided by the invention is in reality
It tests and solves the problems, such as that silicon oxide film and silicon nitride film thicken or plate more well with production, make entire big plate can be very
Good etches away, the film quality and uniformity of one film layer under the influence of not, improves On-line Product yield, therefore reduce and scrap, together
When rehabilitation cost compared with scrap cost, saved 80 or more percent, largely reduced product cost, improve
Economic benefit.It can solve, because plated film thickeies in film formation process or film layer plates phenomenon more, to improve plant production yield..
This technique is big (region that is etched accounts for 95% or more entire display screen) in view of the object area that is etched, and etching is repaired thick
It spends (400 angstroms -10000 angstroms), especially uses following lithographic method.The first step：Etching uses CF4+O2About 70% area of etched membrane layer
Domain can save the time faster, if excessive etching, film quality uniformity can be caused bad, pattern is coarse.Second step：Increase
Pumpdown time, Purge times increase to 50S by 20S, because in large area repair, will produce more products, if row is not
Totally, chamber contamination problem can be caused, while can also influence to repair the uniformity of film layer.Third walks：Etching uses C2HF5+H2+
Ar etches about 30% region, improves the selection ratio of etching, prevents the part for causing lower part to be repaired because F ion is excessively high, uniformity
It is bad.And this combination gas contains H ions, can generate HF, reduces the etching of F ion, forms the relatively good film layer of uniformity,
Convenient large area film layer reparation.4th step：Cleaning machine is cleaned using diluted hydrofluoric acid, and it is remaining that removal is repaired film layer
Reaction product.Film layer will produce a large amount of reaction product during being repaired, and can largely be taken away by main pipeline by pumping,
Fraction rests on above film layer, if do not removed, can be polluted at membrane material to new, influence product quality.It needs
Illustrate, CF4+O2Reaction gas is passed through chamber from stomata among chamber and carries out about 70% region of reactive ion etching.C2HF5+H2+AR
Gas flows into chamber by surrounding areole, is reacted, and about 30% region is etched.The advantage of doing so is that avoiding single gas
Body flow distribution causes etching homogeneity bad.Gas comes out from intermediate stomata, and intermediate region etch rate can be caused to accelerate, from
Surrounding areole comes out, and peripheral regions etch rate can be caused to accelerate, therefore both comprehensive advantage, and it is uniform can to improve etching
Property, meet renovation technique requirement.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.It should be noted that " in an embodiment ", " example of the application
Such as ", " for another example ", it is intended to the application is illustrated, rather than for limiting the application.Embodiment described above only table
The several embodiments of the present invention, the description thereof is more specific and detailed have been reached, but can not be therefore interpreted as to patent of invention
The limitation of range.It should be pointed out that for those of ordinary skill in the art, in the premise for not departing from present inventive concept
Under, various modifications and improvements can be made, these are all within the scope of protection of the present invention.Therefore, the protection of patent of the present invention
Range should be determined by the appended claims.
Claims (10)
1. the surface treatment method of a kind of silicon oxide film and silicon nitride film, which is characterized in that include the following steps：
In vacuum chamber, ionization for the first time is carried out to the first mixed gas and is operated, the first plasma is obtained, using described the
One plasma is to the silicon oxide film and silicon nitride film progress first time etching operation on substrate；Wherein, first gaseous mixture
Body is oxygen and carbon tetrafluoride, and the first mixed gas air inlet, first mixing are provided on the vacuum chamber madial wall
Gas inlet corresponds to the center of the substrate；
In vacuum chamber, second ionization is carried out to the second mixed gas and is operated, the second plasma is obtained, using described the
Two plasmas are to the silicon oxide film and silicon nitride film second of etching operation of progress on substrate；Wherein, second gaseous mixture
Body is carbon fluorine gas, hydrogen and argon gas, and setting is there are four the second mixed gas air inlet on the vacuum chamber madial wall, four
Four corners of the second mixed gas air inlet and the substrate correspond.
2. surface treatment method according to claim 1, which is characterized in that the first time etching operation etches the base
65%~75% region on plate, second of etching operation etch the region of remainder on the substrate.
3. surface treatment method according to claim 2, which is characterized in that on the first time etching operation etch substrate
70% region, second of etching operation etch the region of remainder on the substrate.
4. surface treatment method according to claim 1, which is characterized in that the carbon fluorine gas is that the carbon fluorine gas is
C2H5、C2HF5、C4F8、C5F8、CHF3And CH2F2At least one of.
5. surface treatment method according to claim 1, which is characterized in that in first mixed gas, the oxygen
Flow be 20sccm~200sccm, the flow of the carbon tetrafluoride is 300sccm~2000sccm.
6. surface treatment method according to claim 1, which is characterized in that in second mixed gas, the carbon fluorine
The flow of gas is 80sccm~200sccm, and the flow of the hydrogen is 20sccm~60sccm, and the flow of the argon gas is
100sccm~300sccm.
7. surface treatment method according to claim 1, which is characterized in that described true in the first time ionization operation
The indoor pressure of cavity is 1.33 pas.
8. surface treatment method according to claim 1, which is characterized in that described true in second of the ionization operation
The indoor pressure of cavity is 5.32 pas.
9. surface treatment method according to claim 1, which is characterized in that after second of etching operation, institute
It further includes following steps to state surface treatment method：
To the silicon oxide film and silicon nitride film progress dilute hydrogen fluoride acid water washing operations on substrate.
10. surface treatment method according to claim 9, which is characterized in that the quality of hydrofluoric acid in the diluted hydrofluoric acid
A concentration of 0.1%-1%.
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| CN114284368A (en) * | 2021-12-17 | 2022-04-05 | 通合新能源(金堂)有限公司 | Film coating process of solar cell |
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| US20010009245A1 (en) * | 1998-05-18 | 2001-07-26 | Allen Tuman Earl | Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers |
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