CN108344532A - 压力传感器及其制造方法 - Google Patents
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Abstract
本发明提供压力传感器及其制造方法。压力传感器包括一薄膜晶体管阵列以及覆盖所述薄膜晶体管阵列的一感压层。所述感压层包括在相同平面排列的一维材料或二维材料以及数层绝缘层，所述绝缘层与一维或二维材料交替堆叠，因此能够有效提高压力解析度。
Description
技术领域
本发明涉及一种压力感测技术，且特别涉及一种压力传感器及其制造方法。
背景技术
在现有技术中，压力传感器中的感压层大多是在树脂中混合导电粒子的方式形成，其是通过在受压时，厚度变薄，输出电阻降低，而可以作为感压层使用。但由于导电粒子的导电特性没有方向性，所以除了受压的区域会产生电阻变化之外，未受压的区域也容易受到影响，导致压力解析度变差。因此，如何改善压力传感器的前述问题，使其能提供优异解析度乃当前重要研发的课题。
发明内容
本发明提供一种压力传感器，能够有效提高压力解析度。
本发明另提供一种压力传感器，也能够有效提高压力解析度。
本发明又提供一种压力传感器的制造方法，能制作出压力解析度高的压力传感器。
本发明的一种压力传感器包括一薄膜晶体管阵列以及覆盖所述薄膜晶体管阵列的一感压层。其中，所述感压层包括在相同平面排列的数个一维材料以及数层绝缘层，所述一维材料和所述绝缘层交替堆叠。
本发明的另一种压力传感器包括一薄膜晶体管阵列以及覆盖所述薄膜晶体管阵列的一感压层。其中，所述感压层包括数个二维材料以及数层绝缘层，所述二维材料和所述绝缘层交替堆叠。
在本发明的上述实施例中，所述感压层可为感应电阻式。
在本发明的一实施例中，所述一维材料的直径可为5nm-100nm。
在本发明的一实施例中，所述一维材料的长径比可大于100。
在本发明的一实施例中，所述一维材料可包括金属纳米线、纳米碳管或金属氧化物半导体。
在本发明的一实施例中，所述金属纳米线的金属可包括金、银或铜。
在本发明的一实施例中，所述金属氧化物半导体可包括氧化锌、氧化钛、氧化钨、氧化钼、氧化钒、氧化铜、氧化镍、氧化钴、氧化铁或氧化锡。
在本发明的另一实施例中，所述二维材料可包括石墨烯氧化物或二硫化钼。
本发明的压力传感器的制造方法，包括形成一薄膜晶体管阵列以及在所述薄膜晶体管阵列上利用3D打印形成一感压层。所述感压层包括交替堆叠的数层绝缘层以及于相同平面排列的数个一维材料或数个二维材料。
基于上述，本发明的压力传感器通过在感压层中设置交替堆叠的绝缘层以及于相同平面排列的一维材料或二维材料，使得感压层内的导电结构成为具有方向性的导电层，来提高压力传感器的压力解析度。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所示附图作详细说明如下。
附图说明
图1是依照本发明的一实施例的一种压力传感器的立体示意图；
图2A是图1的压力传感器，在未受压情况下的剖面示意图；
图2B是图2A的压力传感器，在受压情况下的剖面示意图；
图3是依照本发明的另一实施例的一种压力传感器的制造流程步骤图。
附图标记说明：
100：压力传感器；
102：薄膜晶体管阵列；
104：感压层；
206：一维材料；
208：绝缘层；
210：第一薄膜晶体管元件；
212：第二薄膜晶体管元件；
214：压力；
216：区域；
300、302：步骤。
具体实施方式
图1是依照本发明的一实施例的一种压力传感器的立体示意图。
请参照图1。本实施例的一种压力传感器100包括薄膜晶体管阵列102以及覆盖所述薄膜晶体管阵列102的感压层104。感压层104例如是感应电阻式。
以下，配合图2A和图2B示例性地说明图1的压力传感器的详细结构及其实施方式。
请先参照图2A。本实施例的压力传感器100包括薄膜晶体管阵列102以及覆盖所述薄膜晶体管阵列102的感压层104。所述感压层104包括在相同平面排列的数个一维材料206以及数层绝缘层208，所述一维材料206和所述绝缘层208交替堆叠，使得层与层之间的一维材料206不会互相接触。
在本实施例中，所述一维材料的直径通常为5nm-100nm，较佳为20nm-80nm，更佳为40nm-60nm。此外，就良好导电性质而言，只要所述一维材料的长径比(aspect ratio)大于100，所述一维材料的长度没有特别限制。举例来说，所述一维材料可包括金属纳米线、纳米碳管或金属氧化物半导体。金属纳米线的金属可包括金、银或铜，但不限于此。所述金属氧化物半导体可包括氧化锌、氧化钛、氧化钨、氧化钼、氧化钒、氧化铜、氧化镍、氧化钴、氧化铁或氧化锡，但不限于此。
在图2A和图2B中，为方便说明仅示出相邻的两个薄膜晶体管元件(第一薄膜晶体管元件210、第二薄膜晶体管元件212)，但应理解，薄膜晶体管阵列可包含更多的薄膜晶体管元件，而非仅限于图2A或图2B中所显示的数量。
在未施加压力时，如图2A所示，第一薄膜晶体管元件210上的和第二薄膜晶体管元件212上的一维材料206之间因为有绝缘层208隔开，电流难以在其间传递，所以呈现高电阻的状态。当在第一薄膜晶体管元件210的区域施加压力214时，如图2B所示，第一薄膜晶体管元件210上的感压层104因受压而形变，使得一维材料206之间的距离缩短，电流容易在一维材料206之间传递，感压层104的电阻下降。而第二薄膜晶体管元件212上的感压层104虽然也因为压力214而产生形变，但因为不是直接位于施力点上，故即使产生形变，但是具有方向性的一维材料206之间并不容易接触，所以在远离施力点的区域216的感压层104仍维持高电阻。因此，相较于以导电粒子形成感压层的现有技术，本发明能提供较佳的压力解析度，可应用于指纹识别、足压感测之类的压力图像感测技术范畴，但不限于此。但凡需要应用压力感测的场合，均可使用本发明。
此外，上述一维材料206也可改以二维材料(未显示)取代，使二维材料和绝缘层208交替堆叠而成感应层。所述二维材料可列举包括石墨烯氧化物(graphene oxide)或二硫化钼(MoS2)等，但不限于此。由于二维材料的结构也能通过和绝缘层208交替堆叠，使得层与层之间的二维材料不会互相接触，所以其实施方式与一维材料相似，故不再赘述。
以下，将说明依照本发明的另一实施例的压力传感器的制造方法，请参照图3。
首先，进行步骤300，形成一薄膜晶体管阵列(TFT array)，且形成薄膜晶体管阵列的方式可采用任何已知的制造方法。
然后，进行步骤302，在所述薄膜晶体管阵列上利用3D打印形成一感压层，所述感压层包括交替堆叠的数层绝缘层以及于相同平面排列的一维材料或二维材料，且所述一维材料与所述二维材料可参照上述各实施例所记载，故不再赘述。在感压层为一维材料的情况下，是在薄膜晶体管阵列上交替形成绝缘层与一维材料，所以层与层的一维材料之间均未受压的情况下是不会接触的，并在感压层受到一定程度的压力后，才能让电流在一维材料之间传递，而改变(降低)压力传感器的电阻。
而在感压层包括二维材料的情况下，同样是在薄膜晶体管阵列上交替形成绝缘层与二维材料，其结果也与一维材料所构成的感压层一样。
另外，形成感压层的方法除3D打印之外，也可采用网版印刷、凹版(gravure)印刷等适用于卷对卷(roll to roll)的制造方法。
综上所述，本发明的压力传感器通过在感压层中将在相同平面排列的数个一维材料与绝缘层交替堆叠，或者将数个二维材料与绝缘层交替堆叠，能够提高压力传感器的压力解析度。这是因为一维材料之间或二维材料之间的电流传递具有方向性，所以相较于以导电粒子形成感压层的现有技术，本发明能提供较佳的压力解析度。
虽然本发明已以实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作些许的更改与润饰，但这些更改与润饰均应落入本发明的保护范围内。
Claims (15)
1.一种压力传感器，其特征在于，包括：
薄膜晶体管阵列；以及
感压层，覆盖所述薄膜晶体管阵列，其中所述感压层包括在相同平面排列的多个一维材料以及多层绝缘层，所述多个一维材料和所述多层绝缘层交替堆叠。
2.根据权利要求1所述的压力传感器，其特征在于，所述感压层为感应电阻式。
3.根据权利要求1所述的压力传感器，其特征在于，所述一维材料的直径为5nm-100nm。
4.根据权利要求1所述的压力传感器，其特征在于，所述一维材料的长径比大于100。
5.根据权利要求1所述的压力传感器，其特征在于，所述一维材料包括金属纳米线、纳米碳管或金属氧化物半导体。
6.根据权利要求5所述的压力传感器，其特征在于，所述金属纳米线的金属包括金、银或铜。
7.根据权利要求5所述的压力传感器，其特征在于，所述金属氧化物半导体包括氧化锌、氧化钛、氧化钨、氧化钼、氧化钒、氧化铜、氧化镍、氧化钴、氧化铁或氧化锡。
8.一种压力传感器，其特征在于，包括：
薄膜晶体管阵列；以及
感压层，覆盖所述薄膜晶体管阵列，其中所述感压层包括多个二维材料以及多层绝缘层，所述多个二维材料和所述多层绝缘层交替堆叠。
9.根据权利要求8所述的压力传感器，其特征在于，所述二维材料包括石墨烯氧化物或二硫化钼。
10.根据权利要求8所述的压力传感器，其特征在于，所述感压层为感应电阻式。
11.一种压力传感器的制造方法，其特征在于，包括：
形成一薄膜晶体管阵列；以及
在所述薄膜晶体管阵列上利用3D打印形成一感压层，所述感压层包括交替堆叠的多层绝缘层以及于相同平面排列的多个一维材料或多个二维材料。
12.根据权利要求11所述的压力传感器的制造方法，其特征在于，所述一维材料的直径为5nm-100nm。
13.根据权利要求11所述的压力传感器的制造方法，其特征在于，所述一维材料的长径比大于100。
14.根据权利要求11所述的压力传感器的制造方法，其特征在于，所述一维材料包括金属纳米线、纳米碳管或金属氧化物半导体，所述二维材料包括石墨烯氧化物或二硫化钼。
15.根据权利要求14所述的压力传感器的制造方法，其特征在于，所述金属纳米线的金属包括金、银或铜，所述金属氧化物半导体包括氧化锌、氧化钛、氧化钨、氧化钼、氧化钒、氧化铜、氧化镍、氧化钴、氧化铁或氧化锡。
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