CN108337774A - A kind of high-power MOS FET light adjusting circuits - Google Patents
A kind of high-power MOS FET light adjusting circuits Download PDFInfo
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- CN108337774A CN108337774A CN201810120719.7A CN201810120719A CN108337774A CN 108337774 A CN108337774 A CN 108337774A CN 201810120719 A CN201810120719 A CN 201810120719A CN 108337774 A CN108337774 A CN 108337774A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/37—Converter circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Abstract
The invention discloses a kind of high-power MOS FET light adjusting circuits; on the basis of existing light adjusting circuit; add grid source overvoltage crowbar, MOSFET pipe drain-source overvoltage protections and peak absorbing circuit, protection circuit against input over-voltage, output overvoltage protection circuit and adjustable short protection control circuit; the fast and inexpensive safeguard measure with simple and reliable, reaction speed; the durability for improving MOSFET light adjusting circuits, to solve the fragile and narrow technical problem of application range existing for existing MOSFET light adjusting circuits.
Description
Technical field
It is the present invention relates to household and storied building light control field, more particularly to a kind of for exempting to connect up LED light modulation engineerings
High-power MOS FET light adjusting circuits.
Background technology
Existing market mainly dims there are two types of products：Forward position controllable silicon light modulation and after along small-power MOSFET dim.
Before cut controllable silicon light modulation, it is preceding to cut that light modulator is high, efficient, small, light-weight with degree of regulation, easy long distance
From manipulate the advantages that, but before cut controllable silicon light modulation, be only applicable to it is resistive and it is perceptual be responsible for, with existing market mainstream LED lamp produce
The driver of product mismatches, and it is big that there are dash currents, the problems such as being easy to flicker when being transferred to low-light level, becomes this at present and exempts to connect up
The problem that LED dimming modes are promoted.
Light modulator is controlled along cut phase MOSFET afterwards, using field-effect transistor (FET) or insulated gate bipolar transistor
(IGBT) equipment is made.It is suitble to capacitive and resistive load light modulation to be applied in LED illumination without minimum load requirement along light modulation afterwards
In equipment, better performance can be realized on single lighting apparatus or very small load；Although MOS light modulations, which have, adjusts essence
Degree is high, efficient, small, light-weight, adapts to capacitive load, is easy the advantages that remote operation, but driving power is done less,
Currently, the general single light organ for only making knob, is not suitable for engineering field；High-power main IGBT, high expensive,
The problems such as volume is big, calorific value is big and light adjusting circuit is relative complex, unstable is seldom applied to light adjusting system, rear along light modulation side
Formula does not grow up, and controllable silicon dimmer still occupies the light adjusting system market of the overwhelming majority.
IGBT is mostly used along cut phase MOSFET control light modulators after existing, but IGBT has conduction voltage drop constant higher,
Thus thermal losses is big, needs larger heat dissipation cost and volume, is unfavorable for minimizing；Meanwhile MOSFET element is more quick to heat
Sense, due to its characteristic with low-resistance conducting, in the course of work, MOSFET increases with temperature, and high conduction impedance is caused to become larger,
Thus cycle, which is risen progressively, is easy to cause electric current cause thermal damage；Existing market LED product is substantially capacitive product, especially cut phase when work
The peak point current of dimming state is very big, when peak current reaches certain value, it is easy to cause the heat of MOSFET excessive, circuit
It cannot radiate and scatter in time, so as to cause thermal damage；Another aspect MOSFET high current product pressure resistances are not high, at present usually
Pressure-resistant 600-700V.But since circuit power utilization environment is relative complex, product is dimmed, usually in dimming state, because of circuit long transmission line
On will produce very high induced voltage spike>600V easily causes MOSFET over-voltage breakdowns to damage.
Invention content
Technical problem to be solved by the invention is to provide a kind of MOSFET light adjusting circuits, on the basis of existing light adjusting circuit
On, four kinds of overvoltage crowbars are set and adjustable short protects control circuit, use is simple and reliable, reaction speed is fast and inexpensive
Safeguard measure, the durability of MOSFET light adjusting circuits is improved, to solve existing for existing MOSFET light adjusting circuits fragile and answer
The technical issues of with narrow range.
In order to solve the above technical problems, the present invention proposes a kind of MOSFET light adjusting circuits, including：Zero cross detection circuit
100, phase corner cut power control circuit 200, current detection circuit 300, grid source overvoltage crowbar 400, MOSFET pipe drain-sources
Overvoltage protection and peak absorbing circuit 500, protection circuit against input over-voltage 600, output overvoltage protection circuit 700, adjustable short are protected
Protect control circuit；
100 input terminal of zero cross detection circuit connects AC power AC, and zero cross detection circuit output end connects microprocessor all the way
The A/D mouth AVC feet of device MCU make input voltage measurement, and it is defeated that the VPA mouths of another way connection Micro-processor MCV deal with phase controlling
The time reference coordinate point and interrupt processing synchronous triggering signal gone out；
Phase corner cut power control circuit 200 include Micro-processor MCV, the special optocoupler isolation drive chip U10 of MOSFET,
MOSFET pipes QA2, QA1 and resistance RA10, RA9, RA7, RA8；The signal that Micro-processor MCV inputs zero cross detection circuit turns
It is changed to pwm signal and MOSFET light-coupled isolation driving chip U10 is exported and be connected to from TRGA feet, believe to be driven to MOSFET
Number；
Current detection circuit 300 is by the drain-source current of MOSFET pipes Q1, Q2 through 3, the 4 of Hall current sensing device UA1
Foot flows into, the outflow of 1,2 feet, induced voltage export from the 7th foot and process resistance RA17, RA19, RA18, RA23, RA24, RA25,
RA21, capacitance CA8 connect A/D mouthfuls of the IA of Micro-processor MCV with operational amplifier circuit U11A, U11D；
Grid source overvoltage crowbar 400 is composed in parallel by resistance RA3 and Transient Suppression Diode TVSA1；One end connects
Driving to light-coupled isolation driving chip U10 exports 11 foot PWMOUT, and the other end is connected with MOSFET pipe Q1, Q2 source electrodes are connect,
And it connects with reference to zero level point COMA；
MOSFET pipe drain-source overvoltage protections and peak absorbing circuit 500 are in parallel with capacitance CA1 by resistance RA1, then with it is two-way
Transient Suppression Diode DA5 is composed in series；One end connects power cord input, and the other end connects Hall current inductor UA1's
1st the 2nd foot, the over-pressed spike for eliminating load end generation, it is ensured that loop voltage safety；
Protection circuit against input over-voltage 600 is made of varistor；One end connects the alternating current ACL other ends and connects alternating current
Zero curve ACN further ensures that input voltage safety for realizing the clamper of input voltage.
Output overvoltage protection circuit 700 is in parallel with capacitance CA7 by resistance RA20, then with two-way Transient Suppression Diode DA1
It is composed in series；Its both ends is connected respectively between output end and zero curve, forms output overvoltage protection circuit, inhibits output overvoltage sense
Answer due to voltage spikes.
The present invention is adjustable to protect control circuit can be according to MOSFET tube powers size in actual circuit and conducting resistance RDS not
Together, two different protected modes are provided.
When apply to it is low power in the case of, usual RDS>50m Ω, adjustable protection control circuit only select non-precision electric current
Limit value adjustable short protects control circuit 900A；The circuit includes three ends, wherein one end and the 14 of light-coupled isolation driving chip U10
Foot connects, and in addition both ends are connect by fast recovery diode with the error of omission of MOSFET pipes QA1, QA2 respectively；Light-coupled isolation drives core
14 feet of piece U10 provide constant-current bias, are made up of respectively resistance RA5, fast recovery diode DA2, switching diode DA6
The source and drain conducting voltage detection circuit of QA2；Resistance RA6, RA12, fast recovery diode DA3, switching diode DA4 constitute QA1's
Source and drain conducting voltage detection circuit；Triode QA3, resistance RA12, RA29, RA11 constitute current limit and adjust circuit；By setting
It sets non-precision current limit adjustable short protection control circuit 900A and can avoid the abnormal high current of circuit load end appearance, cause
MOSFET QA1, QA2 are damaged.
When apply to it is powerful in the case of, usual RDS<50m Ω, in order to avoid circuit actual deviation value exceeds device energy
The range born, causes circuit to damage.Control circuit is protected precision current limit value adjustable short can be added on above-mentioned basis
900B.Its current sense voltage exported using accurate the 7th foot VO of sensing device UA1 of Hall current, respectively through RA33 to by transporting
The positive peak comparator of U11C, resistance RA30, RA34 composition is put, and is formed to by amplifier U11B, resistance RA37, RA38 through RA28
Negative peak comparator, by two comparator circuit voltages setting accurately control limit value；
As the further of the present invention, MOSFET pipes QA1, QA2 selection meets following key parameter requirement：
A) according to specific rated current Io specification demands, the MOSFET of different Iar specification values is selected：Iar≥Io；
B) according to peak point current Ip ranges are applicable in, MOSFET drain current Id, wherein Ip values specification are selected：Id≥Ip；
c)VDSS≥600V；
d)MOSFET dv/dt≥50V/ns；
E) power consumption umbrella curve meets the electric current ID of 10 μ s safe voltage current curves 580V>ISHORT short circuit current protections；
f)IDSS≦50μA；
Wherein, Iar, Io, Id, Ip, VDSS, ID, ISHORT, IDSS are respectively the avalanche current of MOSFET, light modulator volume
Constant current, the drain current of MOSFET, peak point current, drain-source voltage, drain current, short circuit current protection are saturated drain-source current.
The selection of above-mentioned parameter can make full use of device property in conjunction with circuit of the present invention, it is ensured that switch performance；
As the further of the present invention, circuit of the present invention further includes by the 1st the 2nd feet of inductance L2 connections UA1 and output end, electricity
Hold the both ends CA11 to be connected between the 1st the 2nd feet of UA1 and zero curve, the output end high-frequency filter circuit 800 of composition；
The present invention proposes a kind of MOSFET light adjusting circuits, by the way that four kinds of overvoltage crowbars of the present invention and adjustable are arranged
Short-circuit protection circuit can realize the matching for dimming irrealizable LED dimming lamps relative to silicon-controlled forward position, avoid flickering
And small-power limitation, and it is high, efficient, small, light-weight, easy to be remote to maintain silicon-controlled forward position light modulation degree of regulation
Manipulation exempts to connect up the characteristics such as LED light modulations；Meanwhile MOSFET light adjusting circuits of the invention, it is protected using the boundary adjustable short of innovation
Protection circuit and protection against excessive pressure, can effectively protect device are operated in safe range；It can also be resetted by the tolerance of chip
Setting, avoids malfunctioning, and effectively expands power application range, it can be achieved that the power light modulation of bigger and higher reliability and device
Part utilization ratio.
Description of the drawings
The invention will be further described with example below in conjunction with the accompanying drawings.
Fig. 1 is one circuit diagram of the embodiment of the present invention.
Fig. 2 is that the present invention crosses two circuit diagram of embodiment.
Specific implementation mode
Specific embodiment is described to explain the present invention below with reference to attached drawing, the embodiment is exemplary,
And it is not construed as limiting the claims.
The present invention includes two kinds of different embodiments
Embodiment one：
As shown in Fig. 1, amplifier U5B and U5D, voltage transformer TA, resistance R11, R8, R9, R12, R17, R18, R23,
R24, R25, R26, R29, capacitance C14, C15 form zero cross detection circuit 100.AC power is accessed by terminal DZA, through resistance
R26, R29 connect voltage transformer TA input terminals, coupled output matching connection resistance R28 and coupling resistance R23, through capacitance
It is amplified to be exported from the 7th foot through resistance R25 connection U5B amplifiers input pin 5 after C14 High frequency filters, it is sent all the way through resistance R12
To the A/D mouth AVC feet of Micro-processor MCV in phase corner cut power control circuit 200, input voltage calculating is done, is used for power meter
Calculate application parameter；Another way is sent through resistance R18 to the 12 feet input of amplifier U5D, amplifier U5D and resistance R18, the electricity of 13 feet connection
Hinder the comparator of R27 and capacitance C15 compositions；When the current potential of 12 feet of input U5D is more than the mid point level 2.5V of 13 feet input
When, high level is exported from 14 feet of U5D, conversely, when inputting the current potential of 12 feet of U5 less than the mid point level that 13 feet input, from
14 feet of U5D export zero level, and zero passage, the 14 foot output levels transformation of U5D are primary each time for input AC electricity；From the 14 of U5D
Foot output signal send the VPA mouths of the microprocessor MSP430FR6972IPMR into phase corner cut power control circuit 200；Zero passage is examined
The characteristics of slowdown monitoring circuit 100 has zero passage detection accurate, strong antijamming capability；Type commonly used in the art can be used in the MCU of the present invention
MCU, be not limited merely to the concrete model used in embodiment.
MCU, MOSFET light-coupled isolation driving chip U10, resistance RA7, RA8, RA9, RA10, capacitance EA1, CA4 are formed
Isolation drive control circuit.The time that the zero cross signal that MCU is received is exported as phase controlling calculate reference coordinate point and in
Disconnected processing synchronous triggering signal, when zero passage, which triggers, controls procedure operation per the half period.When MCU receives dimming commands, CLOSA
Foot exports high level, and MCU carries out operation according to control instruction, current state and setting, from the output of the TRGA mouths of MCU and zero passage
The exchange corner cut pwm signal that signal synchronizes；The pwm signal is output to MOSFET by connected resistance RA10, RA9 connection coupling
PWM+ mouthfuls of the 1st foot input of light-coupled isolation driving chip U10, the inner couplings driving through U10 from the PWMOUT mouthful outputs of 11 foot and
Then the matched PWM drive signals of MOSFET pass through the grid that RA7 and RA8 is coupled to MOSFET pipes QA1, QA2, with driving
QA1, QA2 ON/OFF.Capacitance EA1, CA4 are the power filtering capacitors of U10；In this implementation, light-coupled isolation driving chip is selected
A316J chips, but not limited to this.
The drain electrode of N-channel power MOSFET tube QA2 is connect with AC line input terminal, source electrode and the sources MOSFET pipe QA1 of QA2
Extremely it is connected, and connects with reference to zero level point COMA；The drain electrode of MOSFET pipes QA1 connects Hall current inductor UA1 (in present case
Select A712 or A714) 3IP-, 4IP- foot as input signal, 1IP+, 2IP+ foot and inductance L2 of UA1 are connected to output
End forms power control switching major loop；Ensure no matter alternating current can reliably cut off or be connected in positive-negative half-cycle, reaches pair
The precision digitization forward position of AC power/after along corner cut brightness adjustment control；In this implementation, Hall current inductor select A712 or
A714 chips, but not limited to this.
When short-circuit protection alarm triggering, the low level alarm signal of the 6th foot ERR outputs of U10 is coupled to microprocessor through RA14
The OVERA feet of the MCU of device.Normal conditions, if load is linear pure resistance load, protection act is appropriate, if but what is connected be
Capacitive load, for example when connecting many LED lamps, because of the power supply rectification filter capacitance of driver, initial power-on dash current is very
Greatly, possible trigger protection, but when normal work, electric current is simultaneously little, there is erroneous judgement problem；For this purpose, setting Micro-processor MCV
VPA feet level often converts once, is detected to the OVERA feet of MCU primary；If it is height to detect level, to protecting counter O reset；
Once the OVERA feet of Micro-processor MCV detect protection triggering low level, protection counter adds 1, and judges whether counter is small
In certain value, the 5th pin preset U10 of U10 is drawn high after dragging down 1us by the CLOSA feet of MCU less than if；Conversely, being judged as
Short circuit starts timer, and the TRGA feet of Micro-processor MCV export low level in timing, and CLOSA pins are constant, do not reset
U10, driving is in protection lock-out state, and after the completion of timing, the TRGA feet of Micro-processor MCV are exported by normal condition, zero crossing
Triggering protects counter O reset, CLOSA pins to be drawn high after dragging down 1us, resets U10.Reach and avoids capacitive load or other temperature-sensitives
Device load judge by accident short-circuit protection, while again can break down when it is fast and reliable when protect, avoid short-circuit damage MOSFET
Device Q1, Q2.Ensure capacitive load and other nonlinear loads, can be spaced in transient process and generate limit value high current, that is, kept away
Exempt from device damage, and can effectively expand application range.
In phase corner cut power control circuit 200, when MOSFET pipes Q1, Q2 are opened, load current incudes Hall from electric current
3IP-, 4IP- foot of device UA1 enters, and 1IP+, 2IP+ foot go out, and flows through the induced electricity that electric current induction hall device UA1 is generated
Pressure is exported from the 7th foot VO of UA1.It is sent to amplifier integrated chip through resistance RA17 on mono- tunnels voltage VIA1 exported from the 7th foot VO of UA1
The 2nd foot reverse input end of U11A inputs, and RA23 is connected across between the 1st output end of U11A and 2 foot reverse input ends, composition ratio
Example amplifier.The voltage VIA1 of output is exported through amplifier U11A amplifications from the 1st foot output ends of U11A.The signal warp exported from U11A
Resistance RA19 is inputted from the 12nd foot positive input of amplifier U11D, is amplified through amplifier U11D, is exported from the 14th foot output end.From
The signal of U11D outputs send the input ports the A/D IA of Micro-processor MCV through resistance RA18, does A/D detection samplings, does current detecting essence
True value, and voltage detecting value is combined, by MCU operations, power judges, and does normal output by the TRGA of MCU controls
Or constant low level does overpower protection.The 14 foot DESAT connection capacitance CA5 and electricity of MOSFET drive control integrated chips U10
RA11 is hindered, the resistance RA11 other ends are separately connected resistance RA5, RA6, RA12；RA5 connection fast recovery diode DA2, DA2 connections
The QA2 drain electrodes of MOSFET pipes, constitute the source and drain conduction voltage drop detection circuit of QA2；RA6 connection fast recovery diodes DA3, RA6 is another
End connection MOSFET pipes QA1 drain electrodes, constitute the source and drain conduction voltage drop detection circuit of QA1；Switching diode DA4 anodes connect RA6
With the intermediate connection point of DA3, switching diode DA6 anodes connect the intermediate connection point of RA5 and DA2, the negative terminal company of DA4 and DA6
It connects and is connected together with the base stage of triode QA3, and in the base stage of QA3 and inter-collector and connecting resistance RA29；The other end of RA12
It is connected with the emitter-base bandgap grading of QA3, the adjustable gate circuit of voltage limits is formed with constant-current source inside 14 feet of U10；Inside 14 feet for coordinating U10
Permanent level comparator and MOSFET driving gate latch controllers circuits, the adjustable protection control of non-precision short circuit current is collectively formed
Circuit 900A processed.When the 1st foot input high levels of U10, Micro-processor MCV exports the 5th foot of connection U10 by CLOSA pins
RST.When voltage is high level, U10 drives QA1, QA2 to open by 11 foot PWMOUT, while the 14th foot DESAT exports 0.25mA
Constant current, the electric current provide DA2 forward currents through R11, a part through RA5, and the drain-to-source through QA2 detects QA2 drain-source pressures
Difference, and provide QA3 base levels through DA6；A part provides DA3 forward currents, the drain-to-source through QA1, detection through RA6
QA1 drain-source pressure differences, and provide QA3 base levels through DA4；Because of the characteristic of the one-way conduction of diode DA4, DA6, QA3 base stage electricity
The flat drain electrode high potential equipotential with QA1, QA2.The current drain of voltage drop detection circuit part, maximum current are about I1=
(calculating formula is selected according to existing to (7-0.7-0.25*RA11) * (RA5+RA6)/(RA5*RA6)=5.48/50K=0.11mA
The threshold level 7V of device inside comparator and one group of outside matched design parameter, are not limited to the selection parameter)；Another portion
Divide electric current minimum about I2=0.25-I1, is depressured (minimum pressure drop VRA12=I2*RA12) through RA12, arrives the emitter-base bandgap grading of QA3, arrive current collection
Pole returns to COMA；From the minimum stagnation pressure V2=0.25*RA11+I2*RA12 of the emitter-base bandgap grading of 14 foot DESAT to the QA3 of U10, then U10
14 foot voltage VU14=V2+0.7+VDS, when circuit parameter determines, pressure drop V2 is constant, the size of VU14 with VDS size
Change and change, VDS=RDS*IO, RDS is determined by selected component, therefore V14 sizes directly react the size of IO；Work as load
When abnormal high current occurs in end, the drain-source of QA1, QA2 are opened pressure drop VDS and are risen, and U10 passes through constant voltage ratio inside 14 foot DESAT
11 feet of U10 are dragged down by inner lock storage circuit, reach quick when recognizing load end appearance exception short circuit current compared with device
Hardware protection function；CA5 plays a part of to filter out instantaneous interference pulse；Alarm level is exported from the 6th foot of U10 simultaneously, through RA14
It exports to the OVERA feet of MCU, informs MCU exceptions.
Short circuit current protection can be set by metal-oxide-semiconductor source and drain resistance RDS, RA11 and RA12 parameter；The protection circuit, tool
Have that circuit is simple and reliable, the fast feature of reaction speed；But the on-resistance because of size of current detection dependent on MOSFET itself
RDS, RDS are smaller, and it is bigger that protective current threshold value with the deviation of device VZ parameters just acts discreteness；Because VZ values are 7 ± 0.5V, when
When output control power reaches 2000W or more, RDS<When 0.025 Ω, maximum deviation reaches>20A, deviation are very big；It adds
MOSFET element parameter tolerances, deviation are easy the range that can be born beyond device, and the risk of shielding failure increases.Usually work as
The RDS that the MOSFET pipes that Q1, Q2 are selected are selected>When 50m Ω, the current protecting circuit can be singly used.Otherwise it needs to increase accurate limit
It is worth adjustable protection control circuit.
Transient Suppression Diode TVSA1 and resistance RA3 composes in parallel grid source overvoltage crowbar 400, which connects
14 feet of U10 are connect, the source electrode of the other end connection QA1, QA2 are simultaneously connect with reference to zero level point COMA.Grid source overvoltage crowbar
400 ensure Vgs voltages in specification limit, not by over-voltage breakdown.
Resistance RA1 is in parallel with capacitance CA1, then connects with two-way Transient Suppression Diode DA5, and the both ends DA5 are separately connected friendship
1st the 2nd foot of streamline input terminal and UA1 forms MOSFET pipe drain-source overvoltages peak absorbing circuit 600；Rear along dimming state
Under, when QA1, QA2 switch to closing by opening, due to circuit induction reactance, the voltage being added between QA1, QA2 drain-source foot occurs significantly
Variation, when voltage exceeds the threshold voltage of DA5 (selecting two-way TVS), DA5 conductings charge to CA1, are less than DA5 threshold voltages
When CA1 discharged by RA1, eliminate over-pressed spike between QA1, QA2 drain-source foot, it is ensured that between MOSFET pipe QA1, QA2 drain-source feet not by
Overvoltage impulse breakdown injures.
The both ends varistor ZNRA1 connect between online power input and zero curve, form input overvoltage protection 600；Work as input
When there is the threshold voltage that overvoltage is more than varistor ZNRA1 in voltage, ZNRA1 conductings, by input voltage clamper in threshold value electricity
In pressure, it is ensured that input voltage safety, protection MOSFET pipes.
Connect with two-way Transient Suppression Diode DA1 after resistance RA20 and capacitance CA7 parallel connections, both ends be separately connected output and
Zero line side forms output overvoltage protection circuit 900；When load end occurs exceeding DA1 threshold voltages (selecting two-way TVS) sharp pulse
When, DA1 conductings rush electric absorption to CA7 and exceed DA1 threshold voltage sharp pulses, the CA7 when debt terminal voltage is less than DA1 threshold voltages
It is discharged by RA20, it is ensured that loop voltage safety eliminates the over-pressed spike that load end generates.Protect light modulation jointly by various dimensions
Circuit absorbs the overvoltage danger peaking voltage on input and output side and MOSFET, it is ensured that security application.
Light adjusting circuit shown in FIG. 1 further comprises the High frequency filter electricity of the output end of the High-frequency Interference for filtering out load end
Road 800, the 1st the 2nd feet of inductance L2 connections UA1 of the circuit and output end, the both ends capacitance CA11 are connected to the 1st the 2nd feet of UA1
Between zero curve；
To further ensure that switch performance, device property is made full use of, QA1, QA2, which can be selected, meets following key parameter
It is required that:
A) according to specific rated current Io specification demands, the MOSFET of different avalanche current Iar specification values is selected：Iar≥
Io；
B) according to peak point current Ip ranges are applicable in, MOSFET drain current Id, wherein Ip values specification are selected：Id≥Ip；
C) VDSS dram-source voltages >=600V；
D) switch mosfet speed dv/dt >=50V/ns；
E) power consumption umbrella curve meets the electric current ID of 10 μ s safe voltage current curves 580V>ISHORT short circuit current protections；
F) zero poles the grid voltage Lou μ of electricity Liu≤50 A of IDSS.
Wherein, Iar, Io, Id, Ip, VDSS, ID, ISHORT, IDSS are respectively the avalanche current of MOSFET, light modulator volume
Constant current, drain current, peak point current, drain-source voltage, drain current, short circuit current protection are saturated drain-source current.
Embodiment two：
With reference to attached drawing 2, embodiment two increases the protection control of precision current limit value adjustable short on the basis of embodiment one
Circuit 900B processed, in high-power MOS FET device circuit.
Precision current limit value adjustable short protects the one end control circuit 900B to connect 7 feet of UA1, and the other end passes through optocoupler core
Piece UA2 is connected to QA3 grids.Specifically, from the 7 foot output current induced voltage VIA1 of UA1, it is reversed to enter U11B through RA28
Input terminal, the resistance that the 5th foot positive input of amplifier U11B is connected to form by RA26 and resistance RA37, RA38, capacitance CA9
Divider is connected, the bias level VP1 (being typically set at the value less than intermediate potential) provided, forms negative peak detection and compares
Device；Work as VIA1<When VP1, high level is exported from the 7th foot output ends of U11B, is coupled to the first feet of UA2 through RA27, DA8；From UA1's
7 foot VO output current induced voltage VIA1, another way enter the positive input of U11C through RA33, and the 9th foot of amplifier U11C is anti-
It is connected to input terminal with resistance RA30, RA34, capacitance the CA10 resitstance voltage divider being connected to form by RA31, the biased electrical provided
Flat VP2 (being typically set at the value higher than intermediate potential) forms positive peak detection comparator；Work as VIA1>When VP2, U11 the 8th
Foot output end exports high level, passes through the 1st foot of resistance RA32 connection DA7, DA7 connection opto-coupler chips UA2；When the 1st feet of UA2 are defeated
When entering high potential, UA2 optocouplers drive the 3rd foot to export high potential, draw high QA3 base potentials, trigger the 14th foot DESAT connections of U10
Comparator export high potential, triggering U10 output protections forbid and alarm, it is ensured that no matter whenever occur more than setting value
Electric current, can timely trigger protection, conversely, then working normally.The circuit because Hall current inductor precision is high, and voltage limits can
It is accurately adjusted by two bias bleeder resistance, thus can realize accurate short circuit current limit value setting, effectively ensure low RDS's
The short circuit current of MOSFET pipe high-power dimming products is accurately and reliably protected.
Above-mentioned only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form.
Claims (7)
1. a kind of MOSFET light adjusting circuits, including：Zero cross detection circuit 100, phase corner cut power control circuit 200, electric current inspection
Slowdown monitoring circuit 300, it is characterized in that further including：Grid source overvoltage crowbar 400, MOSFET pipe drain-source overvoltage protections and peak absorbing electricity
Road 500, protection circuit against input over-voltage 600, output overvoltage protection circuit 700 and adjustable short protect control circuit；
100 input terminal of the zero cross detection circuit connects AC power AC, and output end connects the A/D mouths of Micro-processor MCV all the way
AVC feet make input voltage measurement, and the VPA mouths that output end another way connects the MCU deal with the time ginseng that phase controlling exports
Examine coordinate points and interrupt processing synchronous triggering signal；
The phase corner cut power control circuit 200 mainly include the MCU, MOSFET light-coupled isolation driving chip U10,
MOSFET pipe QA2, QA1, resistance and capacitance；The signal that zero cross detection circuit inputs is converted to pwm signal from TRGA by the MCU
Foot exports and is connected to the MOSFET light-coupled isolations driving chip U10, to give MOSFET drive signals；
The current detection circuit 300 is by the drain-source current of described MOSFET pipes Q1, Q2 through Hall current sensing device UA1's
3,4 feet flow into, the outflow of 1,2 feet, and induced voltage export from the 7th foot of Hall current sensing device and pass through resistance, capacitance with
Operational amplifier circuit is connected to A/D mouthfuls of the IA of the MCU；
Grid source overvoltage crowbar 400 is composed in parallel by resistance RA3 and Transient Suppression Diode TVSA1；One end connects
The driving of the light-coupled isolation driving chip U10 exports 11 foot PWMOUT, the other end with connect MOSFET pipes Q1, Q2 source electrode
It is connected, and connects with reference to zero level point COMA；
The MOSFET pipes drain-source overvoltage protection and peak absorbing circuit 500 are in parallel with capacitance CA1 by resistance RA1, then with it is two-way
Transient Suppression Diode DA5 is composed in series；One end connects power cord input, and the other end connects the Hall current inductor
The the 1st the 2nd foot of UA1；
The protection circuit against input over-voltage 600 is made of varistor；One end connects alternating current input ACL other ends connection and hands over
Galvanic electricity zero curve ACN, for realizing the clamper of input voltage；
The output overvoltage protection circuit 700 is in parallel with capacitance CA7 by resistance RA20, then with two-way Transient Suppression Diode DA1
It is composed in series；Its both ends is connected respectively between output end and zero curve；
Adjustable short protection control circuit includes non-precision current limit adjustable short protection control circuit 900A；The circuit includes
Three ends, wherein one end are connect with 14 feet of the light-coupled isolation driving chip U10, and in addition fast recovery diode is passed through at both ends respectively
It is connect with the error of omission of described MOSFET pipes QA1, QA2；The constant bias electricity that 14 feet of light-coupled isolation driving chip U10 provide
Stream is made up of the source and drain conducting voltage detection electricity of QA2 resistance RA5, fast recovery diode DA2, switching diode DA6 respectively
Road；Resistance RA6, fast recovery diode DA3, switching diode DA4 constitute the source and drain conducting voltage detection circuit of QA1；Triode
QA3, resistance RA12, RA29, RA11 constitute short circuit current limit adjustment circuit.
2. MOSFET light adjusting circuits according to claim 1, which is characterized in that described MOSFET pipes QA1, QA2 selection with
Lower parameter：
a)Iar≥Io, wherein IarFor MOSFET avalanche currents, IoFor light modulator rated current；
b)Id≥Ip, wherein Id is MOSFET drain currents, and Ip is peak point current
c)VDSS>=600V, wherein VDSSFor MOSFET dram-source voltages；
D) switch mosfet speed dv/dt >=50V/ns；
E) power consumption umbrella curve meets the electric current I of 10 μ s safe voltage current curves 580VD>ISHORT, wherein IDIt drains for MOSFET electric
Stream, ISHORTFor short circuit current protection；
f)IDSS≤ 50 μ A, wherein IDSSIt is saturated drain-source current for MOSFET.
3. MOSFET light adjusting circuits according to claim 1, which is characterized in that the light adjusting circuit further includes by inductance L2
With the output end high-frequency filter circuit 800 of capacitance CA11 compositions；The the 1st the 2nd feet of inductance L2 connections UA1 and output end, it is described
The both ends capacitance CA11 are connected between the 1st the 2nd feet of UA1 and zero curve.
4. MOSFET light adjusting circuits according to claim 1, which is characterized in that the adjustable short protection control circuit is also
Including precision current limit value adjustable short protection control circuit 900B；The precision current limit value adjustable short protects control circuit
900B, one end connects accurate the 7th feet of sensing device UA1 of Hall current, respectively through RA33 to by amplifier U11C, resistance
The positive peak comparator of RA30, RA34 composition, and through RA28 to the negative peak ratio being made of amplifier U11B, resistance RA37, RA38
Compared with device；Amplifier U11B, the U11C output end connects and is connected to QA3 base stages by opto-coupler chip UA2.
5. MOSFET light adjusting circuits according to claim 1, which is characterized in that the microprocessor is
MSP430FR6972IPMR chips.
6. MOSFET light adjusting circuits according to claim 1, which is characterized in that the light-coupled isolation driving chip is
A316J chips.
7. MOSFET light adjusting circuits according to claim 1, which is characterized in that the Hall current inductor be A712 or
A714 chips.
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| CN201810120719.7A CN108337774A (en) | 2018-02-07 | 2018-02-07 | A kind of high-power MOS FET light adjusting circuits |
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| CN201810120719.7A CN108337774A (en) | 2018-02-07 | 2018-02-07 | A kind of high-power MOS FET light adjusting circuits |
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| CN112804792A (en) * | 2021-04-13 | 2021-05-14 | 深圳市安规科技有限公司 | Dimming power module and LED dimming device of steady voltage power supply |
| WO2021169348A1 (en) * | 2020-02-25 | 2021-09-02 | 绍兴艾亿科照明电器有限公司 | Drive circuit with intelligent induction function |
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