CN108335967A - A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer - Google Patents

A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer Download PDF

Info

Publication number
CN108335967A
CN108335967A CN201711482223.6A CN201711482223A CN108335967A CN 108335967 A CN108335967 A CN 108335967A CN 201711482223 A CN201711482223 A CN 201711482223A CN 108335967 A CN108335967 A CN 108335967A
Authority
CN
China
Prior art keywords
pva
pdms
container
film
pva film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711482223.6A
Other languages
Chinese (zh)
Inventor
苑伟政
何洋
吕湘连
王圣坤
周子丹
周董涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northwestern Polytechnical University
Original Assignee
Northwestern Polytechnical University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northwestern Polytechnical University filed Critical Northwestern Polytechnical University
Priority to CN201711482223.6A priority Critical patent/CN108335967A/en
Publication of CN108335967A publication Critical patent/CN108335967A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)

Abstract

The present invention discloses a kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer, belongs to MEMS technology field.The present invention proposes a kind of process being based on the solvable intermediate transfer layer of polyvinyl alcohol (PVA), complete across scale micro-nano structure pattern transfer, it establishes and soluble PVA intermediate transfers layer is prepared with silicon substrate original stencil, then in the process route for replicating flexible complicated multilayer micro-nano compound structure with PVA intermediate transfer layers.This method is realizing the preparation completed while the transfer from the positive figure of hard to flexible positive figure across scale flexible material, to reduce the complicated technology for preparing hard negative patterning in conventional procedure, and to realize that the preparation of more complicated structural flexibility material provides technical foundation.

Description

A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer
Technical field
The present invention relates to one kind based in MEMS technology (micromechanics electronic technology) more particularly to a kind of micro-nano electronic technology Micro-nano flexible structure preparation method.
Background technology
Micro-nano functional structure based on flexible material has important in medicine, the fields such as Surface Science and micronano optical Application value.This flexible material with micro-nano functional structure is super-hydrophobic in cell screening, the fields such as opto-electronic device Extensive research is carried out.
When required flexible material its micro-nano structure is sufficiently complex, such as three layers of micro-nano compound structure, if using traditional Process:1. directly preparing this flexible material in the way of pouring by hard negative norm plate.The key of this mode It is to prepare hard negative norm plate, and the corresponding hard negative norm plate of three layers of micro-nano compound structure flexible material will be three layers a kind of The structure of trough of belt in slot, this structure is difficult processing, therefore be cannot achieve.2. using the flexible manufacturing technique repeatedly shifted, with The positive figure of hard is template.This mode there is from the positive figure of hard to soft negative patterning again to the cycle of the positive figure of hard, The hard material with positive figure is can only obtain using the positive figure of hard as template, therefore cannot achieve.3. utilizing the side of coining Formula imprints the flexible material for providing three layers of micro-nano compound structure.This mode can cause to imprint because of the limitation of inherent parameters The micro-nano compound structure gone out loses, to prepare conformal flexible material.Therefore, the application of this flexible material Receive certain limitation.
Entitled with Patent No. CN106268991A《A kind of production method of PDMS micro-fluidic chips》And Patent No. CN107186298A is entitled《A kind of groove array electrochemical machining system and method based on PDMS templates》For a series of of representative The preparation of its PDMS structure is to pour completion under vacuum with hard negative patterning material pattern in patent.Therefore, it is necessary to make PDMS structures can be just obtained for hard negative patterning material pattern is gone out.When required flexible material its structure is originally sufficiently complex, It is often difficult to out hard negative patterning material pattern, this preparation method is just restricted.
It is entitled with patent publication No. CN106799830A《A kind of polymer surfaces micro-structure hot pressing of plasmaassisted Impression method》It is entitled with Patent No. CN104281004A《A kind of method that pressure sintering prepares PDMS seals》For the patent of representative, Can the flexible material with micro-nano structure be printed off in micro-meter scale and nanoscale pushing respectively.However, coining micro-meter scale is soft The parameter of property material and the parameter of imprint nano scale flexible material are inconsistent.It, can not which results in when being imprinted across scale Micron scale construction and nanostructure are taken into account, to necessarily cause the loss of micro-nano functional structure.
Therefore, the present invention proposes a kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer, specifically Be a kind of process being based on the solvable intermediate transfer layer of polyvinyl alcohol (PVA), complete across scale micro-nano structure pattern transfer, It establishes and soluble PVA intermediate transfers layer is prepared with silicon substrate original stencil, then flexible complicated more with the duplication of PVA intermediate transfer layers The process route of layer micro-nano compound structure, can provide effective means for scientific research or industrialized production.
Invention content
The present invention proposes a kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer, its main feature is that It realizes the preparation completed while the transfer from the positive figure of hard to flexible positive figure across scale flexible material, is passed to reduce The complicated technology of hard negative patterning is prepared during system, and to realize that the preparation of more complicated structural flexibility material provides technology base Plinth.
The technical scheme is that:A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer, Include the following steps:
Step 1:PVA powder is added in absolute ethyl alcohol, stirring is allowed to disperse.
Step 2:In 75 DEG C -80 DEG C of water-bath, suspended PVA and ethanol solution are mixed with water, is used in combination and stirs Device stirring is mixed, until obtaining clarifying sticky PVA solution.
Step 3:Passivated silicon substrate template is placed in container, prepared PVA solution is slowly then poured into container In, extra PVA solution is scraped off with scraping blade, its liquid level is made to be flushed with container port, to control the thickness of PVA film.
Step 4:To prevent film warpage, first container is placed in vacuum drying chamber and is toasted, then is drawn off at normal temperatures It stands until forming softer PVA film.
Step 5:PVA film and silicon substrate template are taken out together, slowly rolled up PVA film from one end using silica gel idler wheel It rises, is allowed to be detached from silicon substrate template;At this point, the structure on silicon substrate is transferred on PVA film.
Step 6:After completing step 5, PVA film is gently removed from idler wheel immediately, by PVA film structureless one Container bottom is fixed in face, then it is stood in room temperature and is allowed to further fix.
Step 7:It is stirred after poly dimethyl oxygen alkane (PDMS) performed polymer is mixed in proportion with curing agent, it is then dry in vacuum Vacuum outgas in dry case.
Step 8:PDMS is poured into container 6, extra PDMS is scraped off with scraping blade, its liquid level is made to be flushed with container port, To control the thickness of PDMS material.
Step 9:Container 6 is placed in vacuum drying chamber, baking is allowed to be shaped to PDMS film.
Step 10:PDMS film and PVA film polymer are taken out from container, the ethyl alcohol for then placing it in heat is water-soluble In liquid, until PVA film is dissolved in ethanol water, then PDMS fexible films is taken out and are dried up, obtain having micro-nano structure PDMS fexible films.
The beneficial effects of the invention are as follows:
1. in order to reach " preparation of flexible complexity multilayer micro-nano compound structure " this most important technical purpose, provide It is a kind of " soluble PVA intermediate transfers layer to be prepared with silicon substrate original stencil, flexible complexity is then being replicated with PVA intermediate transfer layers The one-piece pattern of multilayer micro-nano compound structure ".Since the intensity of silicon materials and PVA materials differs larger, complicated multilayer is micro- Compound silicon structure of receiving is transferred to when demoulded on PVA materials, just can guarantee silicon substrate complexity multilayer micro-nano compound structure It is not damaged, while PVA can be demoulded smoothly.To prepare flexible positive graphic structure by the positive graphics template of hard, break through The limitation on the manufacture road of conventional flex technique.
2. during " replicating flexible complicated multilayer micro-nano compound structure with PVA intermediate transfer layers ", PVA film is existed It is directly dissolved in ethanol solution, the process of PVA and PDMS demouldings is eliminated, to reduce figure during pattern transfer Loss, realize the conformal preparation of flexible complicated multilayer micro-nano compound structure.
Description of the drawings
Fig. 1 is the schematic diagram for pouring PVA in silicon substrate template in PVA pours container
Fig. 2 is the schematic diagram for being detached from PVA film and silicon substrate template using idler wheel
Fig. 3 is the schematic diagram for pouring PDMS on PVA film in PDMS pours container
In figure:1-PVA solution, 2- silicon substrate templates, 3-PVA pour container, 4- idler wheels, and 5-PDMS, 6-PDMS pour container
Specific implementation method
Case study on implementation:
A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer is given in the present embodiment, including Following steps:
Step 1:The PVA powder of 3.5g is added in 35ml absolute ethyl alcohols, stirring always is allowed to keep dispersity.
Step 2:In 80 DEG C of water-bath, suspended PVA and ethanol solution are mixed with 60ml water, stirring is used in combination Device stirs 5min, obtains clarifying sticky PVA solution.
Step 3:Passivated silicon substrate template 2 is placed in PVA to pour in container, then slowly by prepared PVA solution It pours into container, extra PVA solution is scraped off with scraping blade, its liquid level is made to be flushed with container port, obtain 200 micron thickness PVA film, as shown in Figure 1.
Step 4:To prevent film warpage, PVA is first poured into container it is placed in vacuum drying chamber at 60 DEG C and toast 4h, then It is drawn off standing 9h 100 microns of thick PVA films of formation at normal temperatures.
Step 5:PVA film and silicon substrate template are taken out together, slowly rolled up PVA film from one end using silica gel idler wheel 4 It rises, is allowed to be detached from silicon substrate template;At this point, the structure on silicon substrate is transferred on PVA film.As shown in Figure 2.
Step 6:After completing step 5, PVA film is gently removed from idler wheel 4 immediately, using double faced adhesive tape by PVA film The upper structureless PDMS that is fixed on one side pours container bottom, then it is stood 2h in room temperature.
Step 7:Stir 3min after 7ml poly dimethyl oxygen alkane (PDMS) performed polymers are mixed with 0.7ml curing agent, then in In vacuum drying chamber under conditions of vacuum degree is less than 0.1bar vacuum outgas 20min.
Step 8:PDMS is poured into PDMS to pour in container, extra PDMS is scraped off with scraping blade, makes its liquid level and container end Mouth flushes, and obtains the PDMS material of 200 micron thickness, as shown in Figure 3.
Step 9:PDMS is poured container to be placed in vacuum drying chamber, 4h, PDMS moldings are toasted at 80 DEG C.
Step 10:Polymer is poured from PDMS in container and is taken out, then places it in 80 DEG C of ethanol water, stirs PVA film is dissolved in ethanol water after mixing 30min, then PDMS fexible films are taken out, and drying obtains having micro-nano structure PDMS fexible films.

Claims (1)

1. a kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer, which is characterized in that including walking as follows Suddenly:
Step 1:PVA powder is added in absolute ethyl alcohol, stirring is allowed to disperse;
Step 2:In 75 DEG C -80 DEG C of water-bath, suspended PVA and ethanol solution are mixed with water, blender is used in combination Stirring, until obtaining clarifying sticky PVA solution;
Step 3:Passivated silicon substrate template is placed in container, is then slowly poured into prepared PVA solution in container, is used Scraping blade scrapes off extra PVA solution, its liquid level is made to be flushed with container port, to control the thickness of PVA film;
Step 4:To prevent film warpage, first container is placed in vacuum drying chamber and is toasted, then is drawn off standing at normal temperatures Until forming softer PVA film;
Step 5:PVA film and silicon substrate template are taken out together, slowly PVA film is rolled from one end using silica gel idler wheel, is made With silicon substrate template be detached from;At this point, the structure on silicon substrate is transferred on PVA film;
Step 6:After completing step 5, PVA film is gently removed from idler wheel immediately, structureless one side on PVA film is consolidated Due to container bottom, then it is stood in room temperature and is allowed to further fix;
Step 7:It is stirred after poly dimethyl oxygen alkane (PDMS) performed polymer is mixed in proportion with curing agent, then in vacuum drying chamber Middle vacuum outgas;
Step 8:PDMS is poured into container 6, extra PDMS is scraped off with scraping blade, its liquid level is made to be flushed with container port, with control The thickness of PDMS material processed;
Step 9:Container 6 is placed in vacuum drying chamber, baking is allowed to be shaped to PDMS film;
Step 10:PDMS film and PVA film polymer are taken out from container, then place it in the ethanol water of heat In, until PVA film is dissolved in ethanol water, then PDMS fexible films are taken out and are dried up, obtains the PDMS for having micro-nano structure Fexible film.
CN201711482223.6A 2017-12-29 2017-12-29 A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer Pending CN108335967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711482223.6A CN108335967A (en) 2017-12-29 2017-12-29 A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711482223.6A CN108335967A (en) 2017-12-29 2017-12-29 A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer

Publications (1)

Publication Number Publication Date
CN108335967A true CN108335967A (en) 2018-07-27

Family

ID=62923868

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711482223.6A Pending CN108335967A (en) 2017-12-29 2017-12-29 A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer

Country Status (1)

Country Link
CN (1) CN108335967A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219992A1 (en) * 2002-05-22 2003-11-27 Schaper Charles Daniel Replication and transfer of microstructures and nanostructures
CN102114682A (en) * 2010-12-31 2011-07-06 山东理工大学 Method for copying epidermis appearance of scaly organism by using copying template made of polyvinyl alcohol
CN104626433A (en) * 2013-11-08 2015-05-20 纳米新能源(唐山)有限责任公司 Polydimethylsiloxane membrane, preparation method thereof, and friction electric generator using same
CN104844814A (en) * 2015-05-29 2015-08-19 北京化工大学 Microneedle template and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219992A1 (en) * 2002-05-22 2003-11-27 Schaper Charles Daniel Replication and transfer of microstructures and nanostructures
CN102114682A (en) * 2010-12-31 2011-07-06 山东理工大学 Method for copying epidermis appearance of scaly organism by using copying template made of polyvinyl alcohol
CN104626433A (en) * 2013-11-08 2015-05-20 纳米新能源(唐山)有限责任公司 Polydimethylsiloxane membrane, preparation method thereof, and friction electric generator using same
CN104844814A (en) * 2015-05-29 2015-08-19 北京化工大学 Microneedle template and preparation method thereof

Similar Documents

Publication Publication Date Title
CN104870198B (en) The structuring transfer belt of patterning
CN101414119B (en) Method for building sub-micron or nano-scale formwork by micrometre scale formwork
TWI342862B (en) Method of micro/nano imprinting
CN105824190A (en) Preparing method for nanoimprint template
CN109724720B (en) Capacitive flexible pressure sensor and preparation method thereof
CN103738913A (en) Method for manufacturing quasi-three-dimensional micron-nanometer column array
CN102145875B (en) Preparation method of polydimethylsiloxane micro-nanofluidic chip
CN103087087B (en) Containing the soft template of sulfydryl multi-functional low power multi-polysiloxane compound and composition and impression
CN102897709B (en) Manufacturing method of low-cost micronano integrated structure
CN109414726A (en) Use the nanostructured pattern of imprint lithography
CN102799066B (en) Method for preparing concave lens array structure on titanium dioxide inorganic-organic photosensitive composite film
CN103354272B (en) Method of reel-to-reel preparation of large-area micro-nano structured generator membrane
CN105731365B (en) PDMS elastomer micro-nano processing method based on crosslinking control control transfer printing
WO2017101465A1 (en) Nanoimprinted photoresist and preparation method therefor
Peng et al. Direct ink writing combined with metal-assisted chemical etching of microchannels for the microfluidic system applications
Matteucci et al. Poly vinyl alcohol re-usable masters for microneedle replication
CN108646520B (en) The method for preparing nanochannel based on proximity uv-exposure and growing film method
Malaquin et al. Using polydimethylsiloxane as a thermocurable resist for a soft imprint lithography process
CN109179312B (en) A kind of preparation method of pattern metal film
CN108335967A (en) A kind of flexible multi-layered nested structure preparation method based on solvable intermediate transfer layer
CN106980228A (en) A kind of method that durability micro-nano structure is prepared on bend glass
CN104708800A (en) Soft imprinting method for manufacturing micro-nano structure in cycloalkene polymer micro-fluidic chip
Shu et al. Near-zero-adhesion-enabled intact wafer-scale resist-transfer printing for high-fidelity nanofabrication on arbitrary substrates
CN104359342B (en) A kind of strengthening boiling micro-structural of metal surface and preparation method thereof
CN104238264A (en) Solution-assisted soft imprinting method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180727