CN108333202A - A kind of detection method that metal is stained - Google Patents
A kind of detection method that metal is stained Download PDFInfo
- Publication number
- CN108333202A CN108333202A CN201710775070.8A CN201710775070A CN108333202A CN 108333202 A CN108333202 A CN 108333202A CN 201710775070 A CN201710775070 A CN 201710775070A CN 108333202 A CN108333202 A CN 108333202A
- Authority
- CN
- China
- Prior art keywords
- detection
- chip
- metal
- stained
- detection method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20091—Measuring the energy-dispersion spectrum [EDS] of diffracted radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
- G01N2223/0563—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction measure of energy-dispersion spectrum of diffracted radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention provides a kind of detection method that metal is stained, detection chip is provided, after being positioned in tested measurement equipment with chip by detection and stood preset time, the epitaxial growth epitaxial layer on detection chip, Defect Scanning is carried out with chip to detection, judges whether that metal is stained by Defect Scanning result.Epitaxial growth is the method along the lattice growth of chip, if there are metallic pollutions, metal pollutant is fallen on chip, can destroy the growth of natural lattice, while the speed of growth is faster without rule than what natural lattice was grown, the specified defect pattern similar to insect can be formed on the surface of epitaxial layer, according to the defect, it can intuitively be made whether that, there are the judgement that metal is stained, the speed of epitaxial growth is fast, than detection device detection time faster, improve detection efficiency.In addition, for the chip not stain, it can also reuse, be detected again, testing cost can be reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to the stained detection method of a kind of metal.
Background technology
In semiconductor fabrication process, there can be the case where metal pollutant in production equipment, this can treat processed wafer
In device cause undesirable influence, influence wafer yield.
Currently, mainly metallic pollution is detected by dedicated detection device, specifically, having metallic pollution entrance in suspection
When production equipment, the blank wafer (bare wafer) for not carrying out any processing is put into production equipment, stands one
After the section time, which is put into detection device, detection device at least needs 90 minutes or the longer time, is examining
After survey, regardless of test result, which is unable to be recycled again.This mode needs longer
Detection time, while the of high cost of detection can be increased.
Invention content
In view of this, the purpose of the present invention is to provide the detection method that a kind of metal is stained, detection efficiency is improved, is reduced
Testing cost.
To achieve the above object, the present invention has following technical solution：
A kind of detection method that metal is stained, including：
S01, provides detection chip, and the detection is blank wafer with chip；
Detection is positioned over chip in tested measurement equipment and stands preset time by S02；
S03, the epitaxial growth epitaxial layer on detection chip；
S04 carries out Defect Scanning to detection with chip, judges whether that metal is stained by Defect Scanning result.
Optionally, if there is no metals to stain for detection chip, further include：The detection chip is utilized again, is carried out
Step S02-S04.
Optionally, the thickness of the epitaxial layer is 800-1200 angstroms.
Optionally, detection is silicon wafer with chip, and the epitaxial growth epitaxial layer includes：
By decomposing Cvd Process Bysilane Pyrolysis epitaxial layer, the temperature range of epitaxial growth is 800-1200 DEG C.
Optionally, the temperature of epitaxial growth is 708 DEG C, and the thickness of epitaxial layer is 1000 angstroms.
Optionally, described to judge whether that metal is stained by Defect Scanning result, including：
The defect for whether having specific shape in Defect Scanning result is judged, if so, then there is metallic pollution；Conversely, then not
There are metallic pollutions.
Optionally, there are when metallic pollution, further include：
Carry out the analysis of metallic pollution ingredient.
Optionally, the analysis of metallic pollution ingredient is carried out by EDX.
The stained detection method of metal provided in an embodiment of the present invention, provides detection chip, will put detection with chip
It is placed in tested measurement equipment and after standing preset time, the epitaxial growth epitaxial layer on detection chip, to detection chip
Defect Scanning is carried out, judges whether that metal is stained by Defect Scanning result.Epitaxial growth is to be given birth to along the lattice of chip
Long method, if there are metallic pollution, metal pollutant is fallen on chip, can destroy the growth of natural lattice, while growing speed
Degree is faster without rule than what natural lattice was grown, and meeting forms the specified defect pattern similar to insect on the surface of epitaxial layer,
According to the defect, it can intuitively be made whether that the speed of epitaxial growth is fast, than detection device there are the judgement that metal is stained
Detection time faster, improves detection efficiency.In addition, for the chip not stain, it can also reuse, be examined again
It surveys, testing cost can be reduced.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows the flow chart of the detection method of metal contamination according to the ... of the embodiment of the present invention；
Fig. 2-3 shows the schematic diagram of grown epitaxial layer in the stained detection method of metal according to the ... of the embodiment of the present invention；
Fig. 4-7 shows the Defect Scanning picture of the metal contamination of detection method detection according to the ... of the embodiment of the present invention.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific implementation mode be described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
Implemented different from other manner described here using other, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, three-dimensional space that should be comprising length, width and depth in actual fabrication.
As the description in background technology, in semiconductor fabrication process, there can be metal pollutant in production equipment
Situation, these metallic pollution pollutants may be carried along into equipment from previous process, it is also possible to the gold of production equipment itself
Belong to pollution, these metal pollutants can treat the device in processed wafer and cause undesirable influence, influence wafer yield.Currently,
Metallic pollution is mainly detected by dedicated detection device, detection device at least needs 90 minutes or the longer time, is detecting
Later, the detected reagent contamination of chip, regardless of test result, which, which is unable to be recycled again, makes
With.This mode needs longer detection time, while can increase the of high cost of detection.
For this purpose, the present invention proposes a kind of detection method that metal is stained, refering to what is shown in Fig. 1, including：
S01, provides detection chip, and the detection is blank wafer with chip；
Detection is positioned over chip in tested measurement equipment and stands preset time by S02；
S03, the epitaxial growth epitaxial layer on detection chip；
S04 carries out Defect Scanning to detection with chip, judges whether that metal is stained by Defect Scanning result.
In epitaxial growth on chip, the direction of growth along the lattice growth of chip method, if there are metallic pollution,
Metal pollutant is fallen on chip, can destroy the growth of natural lattice, while the speed of growth does not have than grow fast of natural lattice
It is regular, it can be made whether to deposit according to the defect similar to the specified defect pattern of insect in the formation of the surface of epitaxial layer
In the judgement that metal is stained.In the detection method, using the method for epitaxial growth, the speed of epitaxial growth is fast, growth 1000
Angstrom 10 minutes or so are substantially needed, it is more many soon than the detection time of detection device, greatly improve detection efficiency.In addition, in detection
The chip not stain can also be reused, is detected again without any reagent, testing cost can be reduced.
Technical solution for a better understanding of the present invention and technique effect are carried out below with reference to specific embodiment
Detailed description.
In step S01, detection chip is provided, the detection is blank wafer with chip.
Blank wafer is that the chip for production uses blank wafer but without the chip Jing Guo any processing technology
As detection chip.The chip is semiconductor wafer, and for example, Si chips, Ge chips, SiGe chips, SOI are (on insulator
Silicon, Silicon On Insulator) or GOI (germanium on insulator, Germanium On Insulator) chip etc..In this reality
It applies in example, the chip is body silicon wafer.
Detection is positioned over chip in tested measurement equipment and stands preset time by S02.
Tested measurement equipment is the production equipment that possible have metal pollutant, and detection is positioned over tested measurement equipment with chip
In, that is, reaction warehouse or reactive tank etc. that detected chip is put into production equipment carry out in the structure of waper fabrication process,
Later, and without preparing, chip is only stood into wherein a period of time, the time of standing can be according to specific equipment and equipment
The technique of offer determines.
S03, the epitaxial growth epitaxial layer on detection chip.
After standing a period of time in tested measurement equipment, takes out chip and be put into the equipment of epitaxial growth, extension life
Long equipment can be reacting furnace, and chip is the substrate of mono-crystalline structures, grows same crystalline substance by epitaxial growth (EPI) on it
The epitaxial layer of body structure.
For different chips, corresponding epitaxial growth technology may be used.In the present embodiment, detection is silicon with chip
Chip, can be by decomposing silane (SiH4) epitaxial growth epitaxial layer, the temperature range in growth can be 800-1200 DEG C,
The thickness range of growth can be 800-1200 angstroms, at the process conditions, grow that the required time is short and metal pollutant
Defect is easy to be found.In one embodiment, the temperature of epitaxial growth can be 708 DEG C, and the thickness of epitaxial layer can be
1000 angstroms.
If not having metal pollutant on chip, when epitaxial growth, grows according to lattice structure, and there is no lack for wafer surface
It falls into.Refering to what is shown in Fig. 2, there are metal pollutants 110 on chip 100, then the growth of natural lattice can be destroyed, on pollutant,
The speed of growth is faster without rule than what natural lattice was grown, can form specified defect pattern 130 on the surface of 120 layers of extension,
The specified defect pattern is different from other region even curfaces, refering to what is shown in Fig. 3, the shape of insect is appeared similar to, from
Epitaxial layer drills out and is located in epi-layer surface.
As shown in figs. 4-7, it is detection method through the invention, after carrying out outer layer growth, the metal detected is dirty
Photo under the microscope of dye, wherein Fig. 4-5 is vertical view, and Fig. 6-7 is sectional view, it can be seen that pollutant prolongs from chip
Extend on the surface of epitaxial layer, it is observed that its pattern on epitaxial layer, be based on this, can by after growth to wafer surface
It is scanned detection, judges whether metal pollutant indirectly, without using any reagent, in addition, after epitaxial growth,
Chip increases only thickness, if metallic pollution is not present, can still be used again, and is used as detection chip, or even production is used
Chip.
S04 carries out Defect Scanning to detection with chip, judges whether that metal is stained by Defect Scanning result.
If from above-mentioned analysis it is recognised that there are metal pollutant, after epitaxial growth, the defect of specific morphology is had
Occur, can carry out Defect Scanning by scanning device (Defect Scan Tool) can by the photo of defect after scanning
Tentatively to judge whether metallic pollution pollutant, there can be lacking for the specific morphology for being similar to insect shape in wafer surface
It falls into and exists, in this way, preliminary judge that there are metal pollutants in tested measurement equipment.
Later, it can also further be judged, by other analysis tools, pass through EDX (Energy
Dispersive X-Ray Spectroscopy, X-ray energy dispersive spectrometer) carry out metallic pollution ingredient analysis, pass through
EDX carries out constituent analysis to the place for defect occur, the specific ingredient of metal pollutant can be further obtained, in order to true
Determine the source of pollutant, can also further carry out the analysis section of TEM (ransmission electron microscope)
Analysis, reaffirms the pattern of defect.
If, can be by this chip in wafer surface and there is no the defect of this specific pattern after Defect Scanning
It is recycled, before recycling, necessary cleaning step can be passed through, which can continue to serve as detection crystalline substance
Piece carries out the detection of metal pollutant, repeats above-mentioned step S02-S04, carries out the stained inspection of other tested measurement equipment metals
It surveys, is also used as other production purposes.
The detection method stained above to the metal of the embodiment of the present invention is described in detail, and this method can be intuitive
Ground be made whether there are metal stain judgement, the speed of epitaxial growth is fast, than detection device detection time faster, improve inspection
Survey efficiency.In addition, for the chip not stain, it can also reuse, be detected again, testing cost can be reduced.
The above is only a preferred embodiment of the present invention, although the present invention has been disclosed in the preferred embodiments as above, so
And it is not limited to the present invention.Any technical person familiar with the field is not departing from technical solution of the present invention ambit
Under, many possible changes and modifications all are made to technical solution of the present invention using the methods and technical content of the disclosure above,
Or it is revised as the equivalent embodiment of equivalent variations.Therefore, every content without departing from technical solution of the present invention, according to the present invention
Technical spirit any simple modification, equivalent variation and modification made to the above embodiment, still fall within the technology of the present invention side
In the range of case protection.
Claims (8)
1. a kind of stained detection method of metal, which is characterized in that including：
S01, provides detection chip, and the detection is blank wafer with chip；
Detection is positioned over chip in tested measurement equipment and stands preset time by S02；
S03, the epitaxial growth epitaxial layer on detection chip；
S04 carries out Defect Scanning to detection with chip, judges whether that metal is stained by Defect Scanning result.
2. detection method according to claim 1, which is characterized in that if there is no metals to stain for detection chip, also wrap
It includes：The detection chip is utilized again, carries out step S02-S04.
3. detection method according to claim 1, which is characterized in that the thickness of the epitaxial layer is 800-1200 angstroms.
4. detection method according to claim 2, which is characterized in that detection is silicon wafer with chip, the epitaxial growth
Epitaxial layer includes：
By decomposing Cvd Process Bysilane Pyrolysis epitaxial layer, the temperature range of epitaxial growth is 800-1200 DEG C.
5. detection method according to claim 4, which is characterized in that the temperature of epitaxial growth is 708 DEG C, the thickness of epitaxial layer
Degree is 1000 angstroms.
6. according to the detection method described in any one of claim 1-6, which is characterized in that described to be sentenced by Defect Scanning result
It is disconnected to be stained with the presence or absence of metal, including：
The defect for whether having specific shape in Defect Scanning result is judged, if so, then there is metallic pollution；Conversely, being then not present
Metallic pollution.
7. detection method according to claim 6, which is characterized in that there are when metallic pollution, further include：
Carry out the analysis of metallic pollution ingredient.
8. detection method according to claim 7, which is characterized in that carry out the analysis of metallic pollution ingredient by EDX.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710775070.8A CN108333202B (en) | 2017-08-31 | 2017-08-31 | Method for detecting metal contamination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710775070.8A CN108333202B (en) | 2017-08-31 | 2017-08-31 | Method for detecting metal contamination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108333202A true CN108333202A (en) | 2018-07-27 |
| CN108333202B CN108333202B (en) | 2021-08-10 |
Family
ID=62923215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710775070.8A Active CN108333202B (en) | 2017-08-31 | 2017-08-31 | Method for detecting metal contamination |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108333202B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110646451A (en) * | 2019-08-27 | 2020-01-03 | 中国电子科技集团公司第十一研究所 | Beam proportion detection method and detection equipment |
| CN114018930A (en) * | 2021-10-26 | 2022-02-08 | 上海新昇半导体科技有限公司 | Method for detecting primary defects of silicon crystal |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540327A (en) * | 2003-04-22 | 2004-10-27 | 旺宏电子股份有限公司 | Method for detecting metal pollution and corpuscle in processing device |
| CN104078378A (en) * | 2014-07-02 | 2014-10-01 | 武汉新芯集成电路制造有限公司 | Method for detecting metal contamination |
| CN104241158A (en) * | 2014-09-15 | 2014-12-24 | 上海华力微电子有限公司 | Method for monitoring small-size particle defects on annealing device |
| US20160097144A1 (en) * | 2014-10-02 | 2016-04-07 | Sumco Corporation | Contamination control method of vapor deposition apparatus and method of producing epitaxial silicon wafer |
| CN106558508A (en) * | 2015-09-24 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | The method that detecting metal ion stains |
-
2017
- 2017-08-31 CN CN201710775070.8A patent/CN108333202B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540327A (en) * | 2003-04-22 | 2004-10-27 | 旺宏电子股份有限公司 | Method for detecting metal pollution and corpuscle in processing device |
| CN104078378A (en) * | 2014-07-02 | 2014-10-01 | 武汉新芯集成电路制造有限公司 | Method for detecting metal contamination |
| CN104241158A (en) * | 2014-09-15 | 2014-12-24 | 上海华力微电子有限公司 | Method for monitoring small-size particle defects on annealing device |
| US20160097144A1 (en) * | 2014-10-02 | 2016-04-07 | Sumco Corporation | Contamination control method of vapor deposition apparatus and method of producing epitaxial silicon wafer |
| CN106558508A (en) * | 2015-09-24 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | The method that detecting metal ion stains |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110646451A (en) * | 2019-08-27 | 2020-01-03 | 中国电子科技集团公司第十一研究所 | Beam proportion detection method and detection equipment |
| CN114018930A (en) * | 2021-10-26 | 2022-02-08 | 上海新昇半导体科技有限公司 | Method for detecting primary defects of silicon crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108333202B (en) | 2021-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108333202A (en) | A kind of detection method that metal is stained | |
| CN110517946A (en) | The manufacturing method of SiC substrate | |
| Cariou et al. | Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates | |
| US6417015B2 (en) | Semiconductor processing methods and semiconductor defect detection methods | |
| Fleck et al. | Etch Pit Density Reduction in POCl3 and Atmospheric Pressure Chemical Vapor Deposition‐Gettered mc‐Si | |
| US11081407B2 (en) | Methods for assessing semiconductor structures | |
| CN117642530A (en) | Method for determining suitability of Czochralski growth conditions for producing substrates for epitaxy | |
| Sumner et al. | Practical issues in carrier‐contrast imaging of GaN structures | |
| Kreuzer et al. | In situ defect etching of strained-Si layers with HCl gas | |
| Villa | Silicon properties and crystal growth | |
| CN106558508B (en) | Detect the method that metal ion stains | |
| Krawczyk et al. | Inspection of n-type InP crystals by scanning photoluminescence measurements | |
| Lamhamdi et al. | Carrier profiling in Si-implanted gallium nitride by Scanning Capacitance Microscopy | |
| Kato et al. | Preparation and Characterization of Ultraclean H: Si (111)-(1× 1) Surfaces Studied by HREELS, AFM and STM-STS | |
| Higgs et al. | Correlation between oxygen distribution and luminescence efficiency in SiGe/Si layer structures measured by cathodoluminescence imaging and spectroscopy | |
| JP2022175082A (en) | Crystal defect evaluation method for semiconductor single crystal substrate | |
| Smyntyna et al. | Factors influencing the yield stress of silicon | |
| Rozgonyi et al. | Correlation of modulated optical reflectance with silicon carrier lifetime and impurity concentration | |
| Inoue et al. | EVALUATION OF THE STRESS IN A ULSI STRUCTURE BY RAMAN MICROPROBE TECHNIQUE | |
| Cai et al. | Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration | |
| Zoellner et al. | Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for | |
| Bertram | Nanoscale Characterization of Structural and Optical Properties of Nitride Nanostructures Using Helium Temperature Scanning Electron Microscopy Cathodoluminescence | |
| Mitchell | Defect reduction in gallium nitride using cantilever epitaxy. | |
| Ardila et al. | Study of doping in GaAs layers by local probe techniques: micro-Raman, micro-photoluminescence and cathodoluminescence | |
| Popov et al. | Surface morphology of thin Si layers in SOI structures studied by scaling analysis and Fourier transformation of AFM images |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |