CN108321276A - A kind of PV film layers and adhesiveness ameliorative way improving electrode retaining collar adhesiveness - Google Patents
A kind of PV film layers and adhesiveness ameliorative way improving electrode retaining collar adhesiveness Download PDFInfo
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- CN108321276A CN108321276A CN201810092423.9A CN201810092423A CN108321276A CN 108321276 A CN108321276 A CN 108321276A CN 201810092423 A CN201810092423 A CN 201810092423A CN 108321276 A CN108321276 A CN 108321276A
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- film layers
- adhesiveness
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- electrode
- insulating layer
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- 239000013049 sediment Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 241001012508 Carpiodes cyprinus Species 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 230000009172 bursting Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052681 coesite Inorganic materials 0.000 description 12
- 229910052906 cristobalite Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 229910052682 stishovite Inorganic materials 0.000 description 12
- 229910052905 tridymite Inorganic materials 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910006293 Si—N—O Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of ameliorative way for the PV film layers and electrode retaining collar adhesiveness improving electrode retaining collar adhesiveness, the PV film layers are：The ITO ring external sediment SiNO film layers of epitaxial wafer are as transparent insulating layer.Because SiNO film layers can completely be covered in electrode outer surface, phenomenon of bursting apart is not will produce, effective protection electrode prevents from being taken up by soldered ball, to reduce the probability that the PAD on ITO rings falls off when heated.
Description
Technical field
The present invention relates to the preparing technical fields of LED electrode structure, particularly, are related to a kind of adhesiveness improving electrode retaining collar
PV film layers and adhesiveness ameliorative way.
Background technology
In transparent insulating layer (PV layers) hole pattern manufacturing process, the SiO outside the ITO rings of epitaxial wafer2Layer is heated with Au
Afterwards, SiO2Layer can burst apart from the surfaces Au, cause the PAD on ITO rings to fall off, cause product quality problem.
The PAD being badly in need of in the industry on a kind of reduction ITO rings falls off the new technique of probability.
Invention content
Present invention aims at a kind of the PV film layers and adhesiveness ameliorative way of the adhesiveness improving electrode retaining collar is provided, with solution
The technical issues of certainly PAD on ITO rings falls off when heated.
To achieve the above object, the present invention provides a kind of PV film layers for the adhesiveness improving electrode retaining collar, the ITO of epitaxial wafer
The outer and exposed N-GaN layer external sediment SiNO film layers of ring are as transparent insulating layer.The PV film layers protect the electrode on ITO rings not
It is easy to fall off, it is preferable with P-GaN adhesion strengths because electrode and ITO ring adhesion strengths are poor, and SiNO film layers and Au adhesion strengths are preferable.
Preferably, the refractive index of SiNO film layers is 1.74.
Preferably, the deposition thickness of transparent insulating layer existsBetween.
Preferably, the deposition thickness of transparent insulating layer is
A kind of ameliorative way of electrode retaining collar adhesiveness deposits SiNO on electrode and ITO layer surface using PECVD device
As transparent insulating layer；The process conditions of deposition process are：260 DEG C, chamber pressure 800mtorr of substrate temperature, the gas being passed through
Ratio is SiH4:NH3:N2O=1.5:1:6, use high-purity N2It is carrier gas, total gas couette 2000sccm..
The invention has the advantages that：
Because of SiO2Film layer is easily split with Au contact areas, and SiNO film layers can completely be covered in electrode outer surface, will not be produced
Raw phenomenon of bursting apart, effective protection electrode prevent from being taken up by soldered ball.
The result compared in the experiment of electrode adhesiveness bonding wire is as follows：SiO2The verification of thin-film technique bonding wire occurs once in a while
Power down polar ring, SiNO films then can effectively improve ring problem.The reason of causing this situation may be：SiO2For positive tetrahedron
The bond energy of structure, Si-O keys is very big, and under heating condition, the amplitude caused by atom thermal vibration is smaller with displacement, this just makes
Obtain its coefficient of thermal expansion very little.And the Si-N-O bond energys in SiNO are weaker, the ability for resisting thermal vibration is poor, leads to its thermal expansion
Coefficient is larger.Therefore, in PV hole pattern manufacturing process, SiNO and Au will not lead to PV layers because of thermal expansion mismatch and burst apart, ITO
PAD on ring will not fall off when heated naturally.
SiNO films do transparent insulating layer, also following advantage：
1, matched refractive index (between GaN layer and packaging plastic)：The low main problem of LED light extraction efficiency is the angle of emergence
Bore too small, equally, high refractive index GaN layer and low-refraction packaging plastic mismatch cause total reflection ratio high, even if subsequently through
Light extraction after DBR layer can also be lost, i.e. loss at total reflection in GaN layer multiple reflection inside.Increase outgoing pyramid, folding need to be chosen
It is n to penetrate rate2=n1*n2=2.43*1.5, i.e. the medium of n=1.9 is proper as transparent insulating layer, and the folding of SiNO films
Rate is penetrated between 1.46~2.0, meets all features, the application is by adjusting NH3Ratio obtains the film layer of appropriate index.
After actual tests verification the verifying results, the film layer of refractive index 1.74 is chosen.
2, higher penetrance：Light to eliminate two surface reflections of film or more interferes with each other, and increases transmission luminous energy.It is thin
The refractive index and thickness of film also must satisfy certain condition.Two beam reflected lights can all generate half-wave loss in interface, therefore
When optical path difference=1/2 wavelength, thicknesses of layers is minimum.The application corresponds to penetrance by measurement different-thickness film and selects best
With thickness
3, good insulating properties, hardness etc..
Other than objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is described in further detail.
Description of the drawings
The attached drawing constituted part of this application is used to provide further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is the structural schematic diagram of the preferred embodiment of the present invention；
Fig. 2 is the experimental result line chart of the preferred embodiment of the present invention；
Wherein, 1, substrate material, 2, buffer layer, 3, N-GaN layers, 4, mqw layer, 5, P-GaN layers, 6, CB layers, 7, ITO layer,
8, transparent insulating layer, 9, P electrode, 10, N electrode.
Specific implementation mode
The embodiment of the present invention is described in detail below in conjunction with attached drawing, but the present invention can be limited according to claim
Fixed and covering multitude of different ways is implemented.
Referring to Fig. 1, the structure of epitaxial wafer can be found in Fig. 1, include substrate material 1, buffer layer 2, N-type half successively from bottom to up
Conductor layer (N-GaN layers) 3, multiple quantum well layer (MQW) 4, p type semiconductor layer (P-GaN layers) 5, current barrier layer (CB layers) 6, electricity
Flow extension layer (ITO layer) 7, transparent insulating layer (PV layers) 8 and P electrode 9 and N electrode 10.Wherein, transparent insulating layer (PV layers) 8
For SiNO film layers.
Preparation process is as follows：
Layer of transparent conductive layer ITO materials are deposited as current expansion using evaporation coating method in the epitaxial wafer for preparing CB figures
Layer.Be prepared into current extending pattern (ITO layer) by yellow light photoetching process and etch process, using photoetching process and
ICP etching technics etches N-GaN layers.
Be deposited one layer of electrode in electrode position using the method for metal evaporation, the thickness of metal electrode 1.2-2.0um it
Between.Then pass through Tube alloys technique, metal alloy is carried out between 150 DEG C -200 DEG C, forms alloy electrode.
PECVD device and yellow light photoetching process are used with exterior domain in electrode, prepare transparent insulating layer, it is used transparent exhausted
The material of edge layer is SiNO film layers, and the thickness of transparent insulating layer existsBetween.
SiO2＆SiNO membrane deposition methods：Using gas glow discharge, generate low density gas ionization under high-frequency electric field
Plasma, these ions are accelerated in the electric field obtains energy, and wherein electronics obtains temperature after energy due to its quality very little
Increase it is very much, can one to two order of magnitude higher than general environment temperature, could usually be reacted, had at high temperature
Under conditions of gas ions, low temperature can deposit, and growth rate is fast and film layer is fine and close.
SiO2＆SiNO process conditions：260 DEG C of substrate temperature, chamber pressure 800mtorr, SiO2The gas ratio of process conditions
Example SiH4:N2O=1:The gas ratio of 4, SiNO process conditions is SiH4:NH3:N2O=1.5:1:6, use high-purity N2Carrier gas is done, always
Gas flow 2000sccm, deposition thickness are
The variation of gas ratio mainly obtains the film layer of the refractive index needed, does not influence light extraction, ensures the promotion of LOP.
After SiNO is prepared as the epitaxial wafer of transparent insulating layer, takes extension to tear batch comparison open with circle epitaxial wafer odd even with stove and test
Card.PAD deposits SiO respectively after being deposited2PV layers are with SiNO, compares photoelectric properties and the verification of electrode adhesion strength.
Two kinds of property of thin film comparisons：SiO2Film all has high rigidity, high light transmission rate, good dielectric with SiNO films
Property and the characteristics such as wear-resisting, against corrosion.SiO2Film refractive index 1.46, SiNO film refractive indexs 1.74.
Photoelectric parameter compares：The LOP ratio SiO2 techniques of VF1 no significant differences, SiNO techniques are high by about 1.5%, encapsulation LOP without
Notable difference, concrete outcome can be found in following table.
Electrode adhesiveness bonding wire compares：There is power down polar ring once in a while in the verification of SiO2 thin-film technique bonding wires, and SiNO films can have
Effect, which improves, falls ring problem.
Experimentation is as follows：Select 4 epitaxial wafers (1 SiO of PV layers2, 3 SiNO), weld diameter with the automatic bonding equipments of ASM
0.8mil gold threads are compared thrust magnitude and are pushed away electrode condition after gold goal with XX thrusts machine inspecting electrode solderability and adhesion strength.Specifically
Numerical value can be found in following table and Fig. 2, experiment -1, experiment -2, experiment -3 for SiNO film layers as random 3 of PV layers, normally
Experiment refers to SiO2Film layer is as PV layers of epitaxial wafer sample.
| Normally | Experiment -1 | Experiment -2 | Experiment -3 | |
| 1 | 51.89 | 48 | 46.05 | 51.21 |
| 2 | 35.76 | 43.6 | 45.45 | 53.28 |
| 3 | 52.88 | 48.1 | 40.15 | 46.1 |
| 4 | 38.32 | 54.87 | 42.45 | 52.64 |
| 5 | 42.71 | 31.9 | 34.23 | 38.61 |
| 6 | 36 | 43.1 | 31.25 | 32.39 |
| 7 | 41.29 | 49.87 | 42.81 | 42.57 |
| 8 | 51.99 | 39.97 | 47.09 | 52.28 |
| 9 | 47.38 | 47.57 | 34.56 | 46.2 |
| 10 | 34.13 | 57.51 | 34.85 | 42.14 |
| Average value | 43.235 | 46.449 | 39.889 | 45.742 |
It can be seen that from the data of bonding wire thrust magnitude：
1, normal condition and experiment condition do not have abnormal factors in this engineer testing, and thrust magnitude is in normal range (NR)；
2, the bonding wire in this engineer testing is opposite stable with experiment condition for normal condition, is not introduced into its dependent variable；
3, the numerical value difference that normal condition and experiment condition measure in the case of this bonding wire thrust magnitude, can reflect electrode
Adhesiveness difference.
For the above experimental data all in normal range (NR), average value shows that bonding wire is normal.SiNO films under the conditions of i.e. same bonding wire
Layer can effectively improve the adhesion strength of PAD rings.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of PV film layers improving electrode retaining collar adhesiveness, which is characterized in that the outer and exposed N-GaN layers of the ITO rings of epitaxial wafer
External sediment SiNO film layers are as transparent insulating layer.
2. PV film layers according to claim 1, which is characterized in that the refractive index of SiNO film layers is 1.74.
3. PV film layers according to claim 1, which is characterized in that the deposition thickness of transparent insulating layer exists It
Between.
4. PV film layers according to claim 1, which is characterized in that the deposition thickness of transparent insulating layer is
5. a kind of ameliorative way of electrode retaining collar adhesiveness, which is characterized in that on electrode and ITO layer surface, utilize PECVD device
SiNO is deposited as transparent insulating layer；
The process conditions of deposition process are：260 DEG C, chamber pressure 800mtorr of substrate temperature, the gas ratio being passed through are SiH4:
NH3:N2O=1.5:1:6, use high-purity N2It is carrier gas, total gas couette 2000sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810092423.9A CN108321276A (en) | 2018-01-31 | 2018-01-31 | A kind of PV film layers and adhesiveness ameliorative way improving electrode retaining collar adhesiveness |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810092423.9A CN108321276A (en) | 2018-01-31 | 2018-01-31 | A kind of PV film layers and adhesiveness ameliorative way improving electrode retaining collar adhesiveness |
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| Publication Number | Publication Date |
|---|---|
| CN108321276A true CN108321276A (en) | 2018-07-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113284997A (en) * | 2021-05-13 | 2021-08-20 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
| JP7470607B2 (en) | 2020-09-18 | 2024-04-18 | 旭化成エレクトロニクス株式会社 | Nitride semiconductor devices |
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| CN101222015A (en) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN102723417A (en) * | 2012-07-03 | 2012-10-10 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) chip convenient to route and preparation method thereof |
| CN103325913A (en) * | 2013-05-27 | 2013-09-25 | 江苏晶瑞半导体有限公司 | Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
| CN104882523A (en) * | 2014-02-27 | 2015-09-02 | 山东浪潮华光光电子股份有限公司 | GaN-based light-emitting diode chip with gradually-changed refractive index of passivation layer, and manufacturing method of GaN-based light-emitting diode chip |
-
2018
- 2018-01-31 CN CN201810092423.9A patent/CN108321276A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101222015A (en) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN102723417A (en) * | 2012-07-03 | 2012-10-10 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) chip convenient to route and preparation method thereof |
| CN103325913A (en) * | 2013-05-27 | 2013-09-25 | 江苏晶瑞半导体有限公司 | Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
| CN104882523A (en) * | 2014-02-27 | 2015-09-02 | 山东浪潮华光光电子股份有限公司 | GaN-based light-emitting diode chip with gradually-changed refractive index of passivation layer, and manufacturing method of GaN-based light-emitting diode chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7470607B2 (en) | 2020-09-18 | 2024-04-18 | 旭化成エレクトロニクス株式会社 | Nitride semiconductor devices |
| CN113284997A (en) * | 2021-05-13 | 2021-08-20 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
| CN113284997B (en) * | 2021-05-13 | 2022-07-29 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
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