CN108321165A - The method for forming imaging sensor - Google Patents
The method for forming imaging sensor Download PDFInfo
- Publication number
- CN108321165A CN108321165A CN201810211512.0A CN201810211512A CN108321165A CN 108321165 A CN108321165 A CN 108321165A CN 201810211512 A CN201810211512 A CN 201810211512A CN 108321165 A CN108321165 A CN 108321165A
- Authority
- CN
- China
- Prior art keywords
- layer
- optical isolator
- optically isolated
- groove
- method described
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000003384 imaging method Methods 0.000 title claims abstract description 45
- 230000003287 optical effect Effects 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000012545 processing Methods 0.000 description 29
- 238000005530 etching Methods 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000000151 deposition Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This disclosure relates to a kind of method forming imaging sensor, including：First layer is formed in substrate, the substrate includes the semi-conducting material for being used to form photodiode；Groove is formed in the region that form optical isolator of the first layer, the optical isolator is for being optically isolated between pixel unit；And filling is optically isolated material to form the optical isolator in the groove.Disclosed method can reduce the lateral dimension of optical isolator, to reduce influence of the optical isolator to the photosensitive area of pixel unit.
Description
Technical field
This disclosure relates to technical field of semiconductors, it particularly relates to a kind of method forming imaging sensor.
Background technology
In the image sensor, there may be the crosstalks of light between each pixel unit.
Accordingly, there exist the demands to new technology.
Invention content
One purpose of the disclosure is to provide a kind of method of new formation imaging sensor.
According to one aspect of the disclosure, a kind of method forming imaging sensor is provided, including：In substrate shape
At first layer, the substrate includes the semi-conducting material for being used to form photodiode；Optics is formed in the first layer
The region of separator forms groove, and the optical isolator is for being optically isolated between pixel unit；And in the groove
Middle filling is optically isolated material to form the optical isolator.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description with reference to attached drawing, wherein：
Fig. 1 to 5 is to schematically show forming image sensing according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at some exemplary steps of a method of device.
Fig. 6 is the image schematically shown at a step of the method for the formation imaging sensor of the prior art
The schematic diagram in the section of sensor.
Fig. 7 is to schematically show forming one of imaging sensor according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at the exemplary step of method.
Fig. 8 to 10 is schematically to respectively illustrate forming image sensing according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at some exemplary steps of a method of device.
Figure 11 to 13 is schematically to respectively illustrate passed to form image according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at some exemplary steps of a method of sensor.
Figure 14 to 17 is schematically to respectively illustrate passed to form image according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at some exemplary steps of a method of sensor.
Figure 18 is to schematically show forming the one of imaging sensor according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at a exemplary step of method.
Figure 19 to 26 is schematically to respectively illustrate passed to form image according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at some exemplary steps of a method of sensor.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, the position of each structure, size and range etc. shown in attached drawing etc. do not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific implementation mode
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition having
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the disclosure, mean to combine embodiment description to " one embodiment ", referring to for " some embodiments "
Feature, structure or characteristic are included at least one embodiment of the disclosure, at least some embodiments.Therefore, phrase is " at one
In embodiment ", the appearance of " in some embodiments " everywhere in the disclosure be not necessarily referring to it is same or with some embodiments.This
It outside, in one or more embodiments, can in any suitable combination and/or sub-portfolio comes assemblage characteristic, structure or characteristic.
Fig. 1 to 5 is to schematically show forming image sensing according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at some exemplary steps of a method of device.
Method according to the formation imaging sensor of one exemplary embodiment of the disclosure includes：It is formed on substrate 10
First layer 20, as shown in Figure 1, wherein substrate 10 includes the semi-conducting material for being used to form photodiode；As shown in Fig. 2,
The region that form optical isolator 31 of first layer 20 forms groove 21, and optical isolator 31 is used for the light between pixel unit
Learn isolation；And material is optically isolated to form optical isolator 31 as shown in figure 3, being filled in groove 21.Forming optics
After separator 31, all or part of first layer 20 is removed, as shown in Figure 4；Then, as shown in figure 5, adjacent optics every
Colour filter 40 is formed between off member 31.
Although in the embodiment shown by Fig. 1 to 5, optical isolator 31 formation before just substrate 10 include partly
Photodiode 11 is formd in conductor material, it will be appreciated by a person skilled in the art that can also optical isolator formed
31 later formation photodiode 11, there is no restriction to this for the disclosure.In addition, it will be understood by those skilled in the art that this public affairs
Substrate 10 in opening is in addition to including for forming the semi-conducting material of photodiode (such as silicon, germanium, germanium silicon etc.) layer wherein
Except, can also include the other structures being formed on semiconductor material layer, such as high dielectric constant material layer, anti-reflecting layer
Deng.
In some embodiments, first layer 20 is formed by dielectric substance, such as silica etc..Dielectric substance ratio is easier to
In being etched, therefore first layer 20 is formed by dielectric substance, is more advantageous to the formation groove 21 in first layer 20, it is also more advantageous
In removal (such as being formed by etching processing) first layer 20 after forming optical isolator 31.Remove the complete of first layer 20
Portion or part can be carried out by dry etching processing and/or wet etching treatment.It can be handled by selective etch, example
The etching agent high to the etching selection ratio of the material of the material and optical isolator 31 of first layer 20 can be such as used to select
Selecting property etching processing can not so use photoresist, hard to remove first layer 20 in the step of removing first layer 20
Mask etc. etches masking material, and the influence to optical isolator 31 can be also reduced during removing first layer 20.One
In a little embodiments, the whole of first layer 20 is removed after forming optical isolator 31, as shown in Figure 4；In some embodiments,
The part of first layer 20 is removed after forming optical isolator 31, such as is removed the upper part of first layer 20 and retained first layer
20 lower part, the situation with reference to shown in figure 16.
As shown, the region that form optical isolator 31 of first layer 20 is located at the peripheral region of photodiode 11
On.In some embodiments, it is light-proof material to be optically isolated material.For example, be optically isolated material can be it is opaque and
Material with reflection function can also be material opaque and with light absorbing function.Described in the disclosure " no
Light transmission " refers to light transmittance, and less than threshold value, (such as the light transmittance of the optical isolator 31 required by the design of imaging sensor is upper
Limit), it is not limited in referring to light transmittance being 0.Since optical isolator 31 is opaque, then light is not had and (or only has only a few
Light) neighbouring pixel unit can be reached through optical isolator 31, to reduce the string of the light between pixel unit
The possibility disturbed.
Fig. 6 and 7 is schematically shown in the prior art and according to the shape of one exemplary embodiment of the disclosure
At the schematic diagram in the section of the imaging sensor at a step of the method for imaging sensor.
In the prior art, the method for forming imaging sensor includes：It is formed to be used as on substrate L1 ' and is optically isolated material
Then the part for being not used as optical isolator of metal layer L2 ' is removed by etching processing, is retained by the metal layer L2 ' of material
Part (being located at the part on the peripheral region of photodiode) be for the optoisolated light between pixel unit
Learn separator.Due to the limitation of technique, metal layer L2 ' cannot form enough thickness, it is also necessary to be formed on metal layer L2 '
Increase a layer L3 '.Increasing layer L3 ' can be by dielectric substance, such as silica, to be formed.After foring and increasing layer L3 ',
Layer L3 ' will be increased and metal layer L2 ' is performed etching together, to formed for the optoisolated optics between pixel unit every
Off member.In above process, to metal layer L2 ' and increase layer L3 ' etching processing be based on exposure imaging after photoresist
Oxidant layer L4 ' is carried out.
Present inventor has found after having carefully studied the prior art, as shown in fig. 6, in the formation figure of the prior art
As sensor method in, it is photic anti-after exposure imaging since the depth-width ratio of the optical isolator needed to form is larger
The depth-width ratio for losing oxidant layer L4 ' is also larger (such as forming " high-wall " of photoresist as shown in FIG. 6), and depth-width ratio is larger
The risk that " high-wall " of photoresist collapses is also larger, causes the possibility of defect larger.In addition, being optically isolated to reduce
Influence of the part to the photosensitive area of pixel unit, it is often desirable that the lateral dimension of optical isolator (refers to shown in the drawings regard
Size under angle in the horizontal direction) as possible small under the premise of lighttight, this requires the photoresists after exposure imaging
Lateral dimension as possible small of " high-wall " in layer L4 ', so in the case where height is constant, it is desirable that photic after exposure imaging
The depth-width ratio of " high-wall " in resist layer L4 ' further increases, to further increase the possibility for causing defect.This
Outside, in the prior art, the limitation of the technique or equipment of development, the photoresist layer L4 ' after exposure imaging are exposed
In the lateral dimension of " high-wall " may not reach requirement so small, therefore also need to increase photoresist after exposure imaging
The step of (photoresist trim), is trimmed in agent, so that the lateral dimension of " high-wall " in photoresist layer L4 ' meets
It is required which further increases the difficulty of technique and risks.Further, due to the limitation of photoresist self-characteristic, i.e.,
Make the lateral dimension of " high-wall " in the photoresist layer L4 ' after have passed through exposure imaging and trimming that can not also accomplish enough
Small, which makes the lateral dimension of the optical isolator formed in the prior art that can not further decrease.
As shown in fig. 7, in the method according to the formation imaging sensor of one exemplary embodiment of the disclosure, in substrate
First layer L3 is formed on L1, and the groove for being used to form optical isolator is then formed in first layer L3.In this way, in the disclosure
Method in, it is only necessary in first layer L3 formed groove the step of in use photoresist.Therefore, the light if desired formed
The depth-width ratio for learning separator is larger, it is necessary to which the depth-to-width ratio of the groove formed in first layer L3 is larger, then needs to pass through exposure
The groove that development treatment is formed in photoresist layer L4 has enough depth-to-width ratios.In this way, depth-width ratio can be avoided the formation of
" high-wall " of larger photoresist reduces so as to avoid " high-wall " risk for collapsing of photoresist and causes to lack
Sunken possibility.In addition, handling the lateral dimension of the groove formed in photoresist layer L4 by exposure imaging can do
To sufficiently small, so that being formed in the size of the optical isolator formed in the groove and subsequent step in first layer L3 all
It is sufficiently small, so as to minimize influence of the optical isolator to the photosensitive area of pixel unit, that is, increase pixel unit
Photosensitive area.
In some embodiments, it can be metal to be optically isolated material.Metal usually has preferable reflectivity and relatively low
Light transmittance.When it is metal to be optically isolated material, optical isolator 31 may be to other component (for example, being formed in adjacent
Optical isolator 31 between colour filter 40 and the lenticule (not shown) etc. that is formed on colour filter 40) generate metal
Pollution.In some embodiments, as shown in Figures 8 to 10, the method for forming imaging sensor can also be included in removal first layer
After 20 all or part and before forming colour filter 40, the third layer 50 of covering optical isolator 31 is formed, is such as schemed
Shown in 8.It can be carried out by deposition processes to form third layer 50, then can be optically isolated not covering for third layer 50
The part on 31 surface of part removes, as shown in Figure 9；Then colour filter is formed between the optical isolator 31 covered by third layer 50
Device 40, as shown in Figure 10, so that colour filter 40 is contacted with third layer 50 without being contacted with optical isolator 31, to avoid
Optical isolator 31 causes metallic pollution to colour filter 40.Third layer 50 can carry out shape by dielectric substance, such as silica
At.Third layer 50 has certain thickness to guarantee pollution of the metal of isolation optical isolator 31 to other component.
In some embodiments, filling, which is optically isolated material, in groove 21 is carried out by deposition processes.This field
Technical staff is appreciated that filling is optically isolated material and can also be carried out by other suitable processing procedures in a groove,
Such as when being optically isolated material can also to be carried out by electroless plating processing when metal.By deposition processes to groove 21
Middle filling is optically isolated in the embodiment of material, and deposition processes (including pixel region and are patrolled the whole surface of imaging sensor
Collect area's (not shown)) carry out, then it is optically isolated material and has not been only deposited in groove 21, also deposited to the upper of first layer 20
On surface, at this point, the method for forming imaging sensor further includes being located on first layer 20 for removal deposition being optically isolated material
Material.In some embodiments, remove deposition be located at first layer 20 on the material that is optically isolated include：First deposition is located at
The material that is optically isolated on first layer 20 carries out planarization process (such as chemical-mechanical planarization (CMP) processing), by flat
Imaging sensor after smoothization processing can refer to the situation shown in Figure 21；Then, to being optically isolated by planarization process
Material performs etching processing and is optically isolated material to remove being located on first layer 20 for deposition, which stops at
First layer only retains hence for pixel region and is optically isolated material, i.e. optical isolator 31 in groove 21.
In some embodiments, heavy in the whole surface to imaging sensor such as when it is metal to be optically isolated material
After product metal, it may be necessary to retain the metal positioned at logic area, such as can be used for the metal connecting line etc. in subsequent step, this
When removal first layer 20 on the etching processing for being optically isolated material only to the pixel region of imaging sensor carry out.For example, can
Processing only is performed etching to pixel region to realize to block logic area by using photoresist.
In some embodiments, it is tungsten to be optically isolated material.In these cases, the method for forming imaging sensor
Further include before filling tungsten in groove 21, being formed on the first layer 20 for form groove 21 for binding and/or hindering
The second layer 60 of gear, as shown in figure 11, the second layer 60 cover groove 21 side wall and bottom wall, wherein the second layer 60 include titanium and/
Or titanium nitride etc..Since the second layer 60 needs the side wall and bottom wall of covering groove 21, in some embodiments, the second layer 20
(such as atomic layer deposition ALD processing etc.) can be handled by conformal deposit to be formed.Then in groove 21 fill tungsten with
Optical isolator 31 is formed, as shown in figure 12, then the part of the second layer 60 being located on first layer 20 is removed, such as Figure 13
It is shown.Fluoride can be used when due to deposits tungsten, if the fluorine that the process of deposition processes generates touches substrate 10 or first layer 20,
Then cause the damage to these structures.Therefore, before deposits tungsten, be initially formed covering first layer 20 all surface by nitrogenizing
Titanium formed the second layer 60, can barrier against fluorine other structures are caused to damage, that is, play the role of blocking.If in addition, the second layer
60 include titanium, then can increase the binding force between tungsten and first layer 20, that is, play the role of bonding.
In some embodiments, that is filled in being not intended to groove 21 is optically isolated material and is located under first layer 20
It, can be in first layer 20 when substrate 10 (including semiconductor material layer, high dielectric constant material layer, anti-reflecting layer etc.) is in direct contact
The depth of groove 21 is controlled when middle formation groove 21 so that the bottom of the groove 21 of formation is higher than the bottom of first layer 20, such as schemes
Shown in 14.Then filling is optically isolated material to form optical isolator 31, as shown in figure 15 in groove 21.Then is removed
One layer 20 of all or part as shown in figure 16, such as can be removed by dry etching processing and/or wet etching treatment
The upper part of first layer 20 and the lower part for retaining first layer 20, then between adjacent optical isolator 31 and
Colour filter 40 is formed on one layer 20 of lower part, can be connect in this way with substrate 10 to avoid the colour filter 40 formed in subsequent step
It touches.It will be understood by those skilled in the art that in the case where colour filter 40 and substrate 10 can contact, first layer can also be removed
20 all exposed part only retains the part 23 of first layer 20 being located under optical isolator 31, so as shown in figure 18
Colour filter 40 is formed between adjacent optical isolator 31 afterwards.Therefore, according to these embodiments of the disclosure, it is being not intended to light
In the case that separator 31 and/or colour filter 40 are in direct contact with substrate 10, also one need not be formed on substrate 10 again
Optical isolator 31 and/or colour filter 40 could be formed after layer separation layer, it is only necessary to when forming groove 21 and/or be gone
Being isolated between optical isolator 31 and/or colour filter 40 and substrate can be realized in controlling depth when except first layer 20, this
Significantly simplify technological process.
One specific example of the method for the formation imaging sensor of the disclosure is described with reference to Figure 19 to 26.
As shown in figure 19, first layer 20 is formed on substrate 10, and to form optical isolator 31 in first layer 20
Region formed groove 21.Wherein, substrate 10 include for formed wherein the semi-conducting material of photodiode (such as silicon,
Germanium, germanium silicon etc.) layer may include additionally the other structures being formed on semiconductor material layer, such as high-k material
The bed of material, anti-reflecting layer etc..First layer 20 is formed by dielectric substance, such as silica etc..Dielectric substance is relatively easy and is carved
Erosion, therefore first layer 20 is formed by dielectric substance, it is more advantageous to the formation groove 21 in first layer 20, is more favorable in shape
At removal (such as being formed by etching processing) first layer 20 after optical isolator 31.Groove 21 is formed in first layer 20
It can be carried out by photoetching treatment and etching processing, then it is larger will not to form depth-width ratio for the photoetching treatment of formation groove 21
" high-wall " of photoresist, so as to avoid " high-wall " risk for collapsing of photoresist, reduce cause defect can
It can property.
Groove 21 is formed on the peripheral region of photodiode 11, for forming optical isolator 31.Although figure
Situation shown in 19 has formd photodiode when being the formation of groove 21, it will be appreciated by a person skilled in the art that
Can be in the later formation photodiode 11 for forming optical isolator 31, there is no restriction to this for the disclosure.In addition, what is formed is recessed
The bottom of slot 21 is higher than the bottom of first layer 20, this makes the optical isolator that will be formed in groove 21 31 and for binding
And/or the structure 61 of blocking and substrate 10 (including semiconductor material layer, the high dielectric constant material under the first layer 20
Layer, anti-reflecting layer etc.) it will not be in direct contact.
As shown in figure 20, (such as atomic layer deposition ALD processing etc.) is handled by conformal deposit, is foring groove 21
The second layer 60 for binding and/or stopping is formed on first layer 20, the second layer 60 covers the side wall and bottom wall of groove 21, wherein
The second layer 60 includes titanium, and/or titanium nitride etc..The second layer 60 can increase the binding force between tungsten and first layer 20, i.e.,
Play the role of bonding；Fluorine causes to damage to structures such as substrates 10 when can also stop to form optical isolator 31, that is, plays resistance
The effect of gear.
As shown in figure 21, material 30, such as tungsten are optically isolated to be filled in groove 21 by deposition processes.Deposition
Processing is carried out to the whole surface of imaging sensor, then is optically isolated material and has not been only deposited in groove 21, also deposit
It has arrived on the upper surface of first layer 20.It is optically isolated material 30 for the ease of removing to be located on first layer 20, it can be first right
The material 30 that is optically isolated of deposition being located on first layer 20 carries out planarization process (such as chemical-mechanical planarization (CMP)
Processing), the imaging sensor after planarization process is as shown in figure 21.
Then, as shown in figure 22, the part for being optically isolated material 30 and the second layer 60 on first layer 20 is equal
Removal, to formed optical isolator 31 and positioned at optical isolator 31 side wall and bottom wall for binding and/or stopping
Structure 61.The part that is optically isolated material 30 and the second layer 60 of the removal on first layer 20 can by etching processing come
It carries out, which can be controlled as stopping at first layer 20.
As shown in figure 23, can then remove all or part of first layer 20, for example, can be by selective etch at
It manages to carry out, without using photoresist, hard mask etc. to etch masking material.In the selection etching processing,
Using the high etching agent of the etching selection ratio of the material of material and optical isolator 31 to first layer 20, at dry etching
Reason and/or wet etching treatment can be completed.In the case of shown in Figure 23, it is undesirable to by colour filter 40 to be formed and substrate
10 are in direct contact, and therefore, without all removing the first layer 20 exposed, but remove the upper part of first layer 20 and retain the
One layer 20 of lower part 22, so that colour filter 40 to be formed will not be in direct contact with substrate 10.It should be noted that
It, can will be positioned at the side of optical isolator 31 while removing all or part of first layer 20 in the case of shown in Figure 23
Wall for binding and/or the structure 61 that stops also while removing, the only remaining part-structure under optical isolator 31
62。
As shown in figure 24, the third layer 50 of covering optical isolator 31 is formed.It can pass through deposition to form third layer 50
What processing carried out, then the part for not covering 31 surface of optical isolator of third layer 50 can be removed, as shown in figure 25, only
Retain the isolation structure 51 of the roof and side wall of covering optical isolator 31.Then can adjacent optical isolator 31 it
Between, on the lower part 22 of first layer 20 that retains form colour filter 40 and lenticule (not shown), as shown in figure 26.
Although the imaging sensor of pixel region is only schematically shown in the attached drawing of the disclosure in sectional view
Structure, those skilled in the art can obtain the entirety of the imaging sensor involved by the disclosure based on the content that the disclosure is recorded
Structure and forming method.
Word " A or B " in specification and claim includes " A and B " and " A or B ", rather than is exclusively only wrapped
Include " A " or only include " B ", unless otherwise specified.
Word "front", "rear", "top", "bottom" in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other, which is orientated in other different orientations, to be operated.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific implementation mode
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual realization method with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including profit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include following example：
1. a kind of method forming imaging sensor, which is characterized in that including：
First layer is formed in substrate, the substrate includes the semi-conducting material for being used to form photodiode；
Groove is formed in the region that form optical isolator of the first layer, the optical isolator is used for pixel list
Being optically isolated between member；And
Filling is optically isolated material to form the optical isolator in the groove.
2. the method according to 1, which is characterized in that further include：
After forming the optical isolator, all or part of the first layer is removed；And
Colour filter is formed between the adjacent optical isolator.
3. the method according to 1, which is characterized in that the first layer is formed by dielectric substance.
4. the method according to 1, which is characterized in that the area that form the optical isolator of the first layer
Domain is located on the peripheral region of the photodiode.
5. the method according to 1, which is characterized in that the material that is optically isolated is metal.
6. the method according to 2, which is characterized in that the material that is optically isolated is metal, further includes：
After all or part for removing the first layer and before forming the colour filter, covering institute is formed
State the third layer of optical isolator.
7. the method according to 6, which is characterized in that the third layer is formed by dielectric substance.
8. the method according to 5, which is characterized in that it is by heavy to be optically isolated material described in filling in the groove
Product processing carries out.
9. the method according to 8, which is characterized in that the deposition processes are to the pixel region of described image sensor and patrol
Area is collected to carry out.
10. the method according to 8, which is characterized in that be optically isolated material described in filling to be formed in the groove
The optical isolator includes：
Removal deposition be located on the first layer described be optically isolated material.
11. the method according to 10, which is characterized in that being located at for the removal deposition is described on the first layer
Being optically isolated material includes：
To deposition be located at the first layer on described in be optically isolated material carry out planarization process；And
To performing etching processing by being optically isolated material described in the planarization process to remove being located at for deposition
It is optically isolated material described on the first layer.
12. the method according to 11, which is characterized in that the etching processing stops at the first layer.
13. the method according to 11, which is characterized in that
The etching processing only carries out the pixel region of described image sensor.
14. the method according to 13, which is characterized in that block the logic area by using photoresist to realize
Processing only is performed etching to the pixel region.
15. the method according to 5, which is characterized in that the metal is tungsten.
16. the method according to 15, which is characterized in that further include：
In the groove fill tungsten before, on the first layer for form the groove formed for bind and/
Or the second layer of blocking, the second layer cover the side wall and bottom wall of the groove.
17. the method according to 16, which is characterized in that the second layer includes titanium nitride.
18. the method according to 16, which is characterized in that the second layer is formed by conformal deposit processing.
19. the method according to 1, which is characterized in that the bottom of the groove of formation is higher than the bottom of the first layer
Portion.
20. the method according to 2, which is characterized in that the removal first layer fully or partially through dry method
Etching processing and/or wet etching treatment carry out.
21. the method according to 2, which is characterized in that all or part of the removal first layer includes：Removal
The upper part of the first layer and the lower part for retaining the first layer.
22. the method according to 21, which is characterized in that between the adjacent optical isolator and described
The colour filter is formed on the lower part of first layer.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of method forming imaging sensor, which is characterized in that including：
First layer is formed in substrate, the substrate includes the semi-conducting material for being used to form photodiode；
The first layer to form optical isolator region formed groove, the optical isolator for pixel unit it
Between be optically isolated；And
Filling is optically isolated material to form the optical isolator in the groove.
2. according to the method described in claim 1, it is characterized in that, further including：
After forming the optical isolator, all or part of the first layer is removed；And
Colour filter is formed between the adjacent optical isolator.
3. according to the method described in claim 1, it is characterized in that, the first layer is formed by dielectric substance.
4. according to the method described in claim 1, it is characterized in that, the institute that form the optical isolator of the first layer
Region is stated to be located on the peripheral region of the photodiode.
5. according to the method described in claim 1, it is characterized in that, the material that is optically isolated is metal.
6. according to the method described in claim 2, it is characterized in that, the material that is optically isolated further includes for metal：
After all or part for removing the first layer and before forming the colour filter, is formed and cover the light
Learn the third layer of separator.
7. according to the method described in claim 6, it is characterized in that, the third layer is formed by dielectric substance.
8. according to the method described in claim 5, it is characterized in that, it is logical to be optically isolated material described in filling in the groove
Cross deposition processes progress.
9. according to the method described in claim 8, it is characterized in that, the deposition processes are to the pixel region of described image sensor
It is carried out with logic area.
10. according to the method described in claim 8, it is characterized in that, in the groove filling described in be optically isolated material with
Forming the optical isolator includes：
Removal deposition be located on the first layer described be optically isolated material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810211512.0A CN108321165A (en) | 2018-03-15 | 2018-03-15 | The method for forming imaging sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810211512.0A CN108321165A (en) | 2018-03-15 | 2018-03-15 | The method for forming imaging sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108321165A true CN108321165A (en) | 2018-07-24 |
Family
ID=62901584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810211512.0A Pending CN108321165A (en) | 2018-03-15 | 2018-03-15 | The method for forming imaging sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108321165A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904182A (en) * | 2019-02-25 | 2019-06-18 | 德淮半导体有限公司 | The method for forming imaging sensor |
| CN115995478A (en) * | 2023-03-24 | 2023-04-21 | 合肥新晶集成电路有限公司 | Image sensor and method for manufacturing the same |
| CN116247069A (en) * | 2023-05-09 | 2023-06-09 | 合肥新晶集成电路有限公司 | Semiconductor structure, preparation method thereof and back-illuminated image sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456683A (en) * | 2012-05-30 | 2013-12-18 | 三星电子株式会社 | Methods of forming a through via structure, image sensor and integrated circuit |
| CN104637959A (en) * | 2013-11-08 | 2015-05-20 | 苏州东微半导体有限公司 | Semiconductor light sensing device and method for manufacturing same |
| CN104733488A (en) * | 2013-12-20 | 2015-06-24 | 中芯国际集成电路制造(上海)有限公司 | Organic image sensor and forming method thereof |
| US20170179171A1 (en) * | 2013-05-24 | 2017-06-22 | Sony Corporation | Solid-state imaging device and electronic apparatus |
| CN106920810A (en) * | 2015-12-11 | 2017-07-04 | 台湾积体电路制造股份有限公司 | Image sensor devices and manufacture method |
| US20180012944A1 (en) * | 2016-07-08 | 2018-01-11 | Japan Display Inc. | Display device |
-
2018
- 2018-03-15 CN CN201810211512.0A patent/CN108321165A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456683A (en) * | 2012-05-30 | 2013-12-18 | 三星电子株式会社 | Methods of forming a through via structure, image sensor and integrated circuit |
| US20170179171A1 (en) * | 2013-05-24 | 2017-06-22 | Sony Corporation | Solid-state imaging device and electronic apparatus |
| CN104637959A (en) * | 2013-11-08 | 2015-05-20 | 苏州东微半导体有限公司 | Semiconductor light sensing device and method for manufacturing same |
| CN104733488A (en) * | 2013-12-20 | 2015-06-24 | 中芯国际集成电路制造(上海)有限公司 | Organic image sensor and forming method thereof |
| CN106920810A (en) * | 2015-12-11 | 2017-07-04 | 台湾积体电路制造股份有限公司 | Image sensor devices and manufacture method |
| US20180012944A1 (en) * | 2016-07-08 | 2018-01-11 | Japan Display Inc. | Display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904182A (en) * | 2019-02-25 | 2019-06-18 | 德淮半导体有限公司 | The method for forming imaging sensor |
| CN115995478A (en) * | 2023-03-24 | 2023-04-21 | 合肥新晶集成电路有限公司 | Image sensor and method for manufacturing the same |
| CN116247069A (en) * | 2023-05-09 | 2023-06-09 | 合肥新晶集成电路有限公司 | Semiconductor structure, preparation method thereof and back-illuminated image sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9773676B2 (en) | Lithography using high selectivity spacers for pitch reduction | |
| US9099530B2 (en) | Methods of patterning small via pitch dimensions | |
| US9831117B2 (en) | Self-aligned double spacer patterning process | |
| TWI505324B (en) | Method for forming high density patterns | |
| CN108321165A (en) | The method for forming imaging sensor | |
| KR101719867B1 (en) | Photomask with three states for forming multiple layer patterns with a single exposure | |
| US20170338116A1 (en) | Method for Patterning a Substrate Using a Layer with Multiple Materials | |
| JP2007150257A (en) | Method for forming storage node contact plug of semiconductor device | |
| CN107068610B (en) | It is formed to have and reduces the tapered interconnection feature of side wall | |
| TW201737309A (en) | Method and system for forming memory FIN patterns | |
| JP6928764B2 (en) | Method of spin-on deposition of metal oxides | |
| EP3618103A1 (en) | A patterning method | |
| CN108447820B (en) | Apparatus for multiple patterning with non-chamfered vias and method of forming non-chamfered vias | |
| TW200929328A (en) | Method for fabricating semiconductor device | |
| TW540096B (en) | Fabrication of optical waveguides for reduction of minimum waveguide spacing | |
| CN109904182A (en) | The method for forming imaging sensor | |
| US6156460A (en) | Photo-mask and method of fabricating the same | |
| US20130037918A1 (en) | Semiconductor Structure and Manufacturing Method Thereof | |
| CN108598101A (en) | The method for manufacturing back side illumination image sensor | |
| US20080305635A1 (en) | Method for fabricating a pattern | |
| CN106082109B (en) | MEMS structure with round edge brake and its manufacturing method | |
| KR20060136174A (en) | Method for manufacturing fine pattern | |
| EP0508759A2 (en) | Method of producing submicron contacts with unique etched slopes | |
| US20080090156A1 (en) | Photo mask having assist pattern and method of fabricating the same | |
| KR100640966B1 (en) | A method for cleaning a semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180724 |
|
| WD01 | Invention patent application deemed withdrawn after publication |