CN108315792A - A kind of wafer electro-plating method and electroplanting device - Google Patents
A kind of wafer electro-plating method and electroplanting device Download PDFInfo
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- CN108315792A CN108315792A CN201710032460.6A CN201710032460A CN108315792A CN 108315792 A CN108315792 A CN 108315792A CN 201710032460 A CN201710032460 A CN 201710032460A CN 108315792 A CN108315792 A CN 108315792A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
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Abstract
The present invention relates to a kind of wafer electro-plating method and electroplanting device, the method includes：Wafer to be electroplated is provided, and is powered to the wafer；Reaction chamber is provided, barrier layer is provided in the reaction chamber, upper chamber and lower chambers will be divided between the reaction chamber, wherein being provided with electroplate liquid in the bottom chamber, the non-electrical plating solution not reacted with the wafer is provided in the upper chamber；The wafer is put into the upper chamber, when the wafer is completely immersed in the non-electrical plating solution, removes the barrier layer, so that the upper chamber is connected to lower chambers and executes electroplating technology to the wafer.The wafer can be isolated in the moment for immersing the reaction chamber with electroplate liquid by the barrier layer, to solve the problems, such as that immediate current is excessive, further increases the performance and yield of device.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of wafer electro-plating method and electroplanting device.
Background technology
With the sustainable development of integrated circuit technique, more devices will be integrated on chip, chip will also use speed faster
Degree.Under the propulsion of these requirements, the geometric dimension of device will constantly reduce, and green wood is constantly used in the manufacturing process of chip
Material, new technology and new manufacturing process.The preparation of semiconductor devices at present has evolved to Nano grade, while conventional device
Preparation process is gradually ripe.
In the preparation process of semiconductor devices, it will usually use electroplating technology, such as formed metal layer, contact hole or
When the interconnection structures such as through-hole, the electroplating technology is typically that wafer is put into electroplating pool to be electroplated.
When wafer is in reaction chamber, wafer was connected before entering under liquid level, in the wafer
On be provided with electric current, the purpose of the electric current is that whether normal, solution meets conducting demand to detection wafer conduction, and 3 ° of cooperation enters
Liquid level reduces the step current of crystal column surface.In a flash into liquid level, the transient current of conducting is larger, the wafer of energization
It can react with solution, it is possible to the defect that (plating) can not make up be electroplated after causing.
Therefore it needs to be improved the wafer electro-plating method, the problem of to eliminate current technique.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
The present invention provides a kind of wafer electro-plating method, the method includes：
Wafer to be electroplated is provided, and is powered to the wafer；
Reaction chamber is provided, barrier layer is provided in the reaction chamber, epicoele will be divided between the reaction chamber
Room and lower chambers are provided in the upper chamber and do not occur with the wafer wherein being provided with electroplate liquid in the bottom chamber
The non-electrical plating solution of reaction；
The wafer is put into the upper chamber, when the wafer is completely immersed in the non-electrical plating solution, described in removal
Barrier layer, so that the upper chamber is connected to lower chambers and executes electroplating technology to the wafer.
Optionally, the non-electrical plating solution includes pure water.
Optionally, the material for stopping the electroplate liquid is chosen on the barrier layer.
Optionally, cattail and reed waterproof ventilated membrane is chosen on the barrier layer.
Optionally, being additionally provided in the lower chambers below the barrier layer supports the high value on the barrier layer virtual
Anode.
The present invention also provides a kind of electroplanting device, described device includes：
Main body is equipped with reaction chamber；
Barrier layer, setting on the body, and can switch between stretching state, retracted state：
The barrier layer is set under the stretching state inside the reaction chamber, will be between the reaction chamber
It is divided into upper chamber and lower chambers, wherein the lower chambers are not sent out for holding with wafer for holding electroplate liquid, the upper chamber
The non-electrical plating solution of raw reaction；
Under the retracted state, the upper chamber is connected to lower chambers on the barrier layer.
Optionally, the material for stopping the electroplate liquid is chosen on the barrier layer.
Optionally, cattail and reed waterproof ventilated membrane is chosen on the barrier layer.
Optionally, the high value virtual anodes for supporting the barrier layer, the blocking are additionally provided in the reaction chamber
For layer under the stretching state, the high value virtual anodes are located at the bottom chamber, the barrier layer under the stretching state
It is set to above the high value virtual anodes.
Optionally, cathode electrode and anode electrode are additionally provided in the reaction chamber, the barrier layer is in the stretching
Under state, the cathode electrode is located in the upper chamber, and the anode electrode is located at the bottom chamber.
Optionally, it is provided with cathode electrode in the upper chamber, anode electrode is provided in the lower chambers.
Optionally, further include：The indoor reel of the reaction chamber is can be rotatably set in the main body and is located at, it is described
Barrier layer is wrapped on the reel.
The present invention provides a kind of electro-plating method and devices, in order to avoid wafer is in the moment electricity for immersing the reaction chamber
Flow through big, one layer of barrier layer of setting inside the reaction chamber.Wafer is before entering liquid level, and barrier layer is always in the reaction
Chamber interior, after wafer immersed in liquid level, barrier layer is withdrawn.It can be described anti-in immersion by the wafer by the barrier layer
Answer the moment of chamber to be isolated with electroplate liquid, to solve the problems, such as that immediate current is excessive, further increase device performance and
Yield.
Description of the drawings
The following drawings of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 is the flow diagram of electro-plating method of the present invention；
Fig. 2 is that wafer is entered to the structural schematic diagram before reaction chamber in the present invention；
Fig. 3 is that wafer is entered to the structural schematic diagram after reaction chamber in the present invention.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical scheme of the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiment.
Embodiment one
Below with reference to the accompanying drawings the electro-plating method of the present invention is described in detail, Fig. 1 is the stream of electro-plating method of the present invention
Journey schematic diagram；Fig. 2 is that wafer is entered to the structural schematic diagram before reaction chamber in the present invention；Fig. 3 be the present invention in by wafer into
Enter the structural schematic diagram after reaction chamber.
The present invention provides a kind of electro-plating method, as shown in Figure 1, the key step of the preparation method includes：
Step S1：Wafer to be electroplated is provided, and is powered to the wafer；
Step S2：Reaction chamber is provided, barrier layer is provided in the reaction chamber, by the reaction chamber interval
It is provided in the upper chamber and the wafer for upper chamber and lower chambers wherein being provided with electroplate liquid in the bottom chamber
The non-electrical plating solution not reacted；
Step S3：The wafer is put into the upper chamber, when the wafer is completely immersed in the non-electrical plating solution, is moved
Except the barrier layer, so that the upper chamber is connected to lower chambers and executes electroplating technology to the wafer.
In the following, being described in detail to the specific implementation mode of the electro-plating method of the present invention.
First, step 1 is executed, provides wafer 207 to be electroplated, and be powered to the wafer.
Wherein, the wafer 207 to be electroplated can be following at least one of the material being previously mentioned：Silicon, insulator
Silicon (SSOI), stacking SiGe (S-SiGeOI), germanium on insulator SiClx on insulator are laminated on upper silicon (SOI), insulator
(SiGeOI) and germanium on insulator (GeOI) etc..
Wherein, various device patterns be could be formed on the wafer to be electroplated, for example, can be formed cmos device or
Person's MEMS device etc..
Specifically, in one embodiment of this invention, contact hole opening, via openings are could be formed in the wafer
And the various openings or groove of metal layer are used to form, by contact hole opening, via openings and various openings
Or execute electroplating technology in groove and then fill the opening or groove, to form interconnection structure.
Optionally, in contact hole opening, via openings and be used to form in various openings or the groove of metal layer
Diffusion impervious layer (barrier) is formed, such as forms copper diffusion barrier layer, the forming method of the copper diffusion barrier layer can be
It is main that physical vaporous deposition and chemical vapour deposition technique is selected specifically can to select evaporation, electron beam evaporation, plasma
Body jet deposition and sputtering select plasma spray deposition and sputtering method to form the copper diffusion barrier in the present invention
Layer.The thickness of the copper diffusion barrier layer is not limited in a certain numerical value or range, can be adjusted as needed.
Optionally, the diffusion barrier material can be one or more in TaN, Ta, TiN, Ti, to reduce
The RC delay times caused by dead resistance and parasitic capacitance.Optionally, it is selected in of the invention one specifically embodiment
TaN and/or Ta.
Then the deposited seed layer on the diffusion impervious layer, for example, metallic copper seed layer, the deposition of the seed layer
Method can select chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or atomic layer deposition (ALD) method etc..
In addition, in order to detect wafer conduction, whether normal, solution meets conducting demand, applies electricity to the wafer
Stream makes the wafer be in energized state, has a certain size electric current on the crystal column surface.
There is electric current just because of on the surface of the wafer, include copper ion in electroplate liquid, immersed by the wafer
In a flash, the transient current of conducting is larger for the liquid level of electroplate liquid, and the wafer of energization can react with solution, it is possible to cause
The defect that plating (plating) can not make up later.
For this purpose, the application has done further improvement to the method：
Step 2 is executed, reaction chamber is provided, barrier layer 206 is provided in the reaction chamber, by the reaction chamber
Interventricular septum is upper chamber and lower chambers, wherein be provided with electroplate liquid in the bottom chamber, is provided in the upper chamber and institute
State the non-electrical plating solution that wafer does not react.
Wherein, the lower chambers are surrounded by the lower sides of reaction chamber 201, as shown in figure 3, the barrier layer is described
Under stretching state, the electroplate liquid 203 and anode electrode 202 are provided in the lower chambers, and the high value is empty
Quasi- anode (High Resistance Virtual Anode, HRVA) 208 is also disposed on the bottom chamber, and is located at institute
State the top of lower chambers.
Wherein, under the stretching state, the upper chamber (is not shown in figure and surrounds the upper chamber on the barrier layer
Side wall) in be provided with cathode electrode 204 and non-electrical plating solution 205.
Wherein, the shape of the upper chamber and the lower chambers is not limited to a certain kind, such as the upper chamber and institute
The vertical view for stating lower chambers is round, rectangular (square, rectangle) or polygon etc., and details are not described herein.
In addition, the size of the upper chamber and the lower chambers can be identical, difference is may be set to be, in the embodiment
In, although as shown in figure 3, the side wall of upper chamber is not shown in figure, the opening size of the lower chambers is less than on described
The opening size of chamber, formation are up big and down small structure.
Specifically, as shown in Fig. 2, there are two types of liquid for tool in the reaction chamber main body 201, below the barrier layer
For electroplate liquid 203 (virgin makeup solution, VMS), the composition of the electroplate liquid includes water, sulfuric acid, copper ion, chlorine
Ion and some organic additives etc..
Wherein, the additive includes some macromolecular additives, such as flat dose (LEVELER), accelerator
(ACCELERATORE) and inhibitor (SUPPRESSOR).
And the liquid above the barrier layer is the non-electrical plating solution 205 not reacted with the wafer, including it is various
Inactive reagents, wherein being preferably pure water in the present invention, as a part for electroplate liquid, after removing the barrier layer not
Electroplate liquid can be impacted, the diffusion of various ions in electroplate liquid will not be hindered, to make electroplating technology be smoothed out.
It should be noted that the liquid above the barrier layer is not limited to pure water, can also be it is various not
The inertia solution to react with wafer, specifically how using can select according to actual needs.
Wherein, the material for stopping electroplate liquid (including water, copper sulphate and additive) is chosen on the barrier layer.
Optionally, cattail and reed waterproof ventilated membrane is chosen on the barrier layer.
Wherein, since cattail and reed waterproof ventilated membrane, hardness and finite thickness are chosen in the barrier layer, in order to be better achieved
High value virtual anodes (High Resistance Virtual Anode, HRVA) are arranged in isolation effect in the lower chambers
208, under the stretching state, the high value virtual anodes are located at the bottom chamber, the stretching shape on the barrier layer
Barrier layer under state is set to above the high value virtual anodes, to play a supporting role to the barrier layer.
Wherein, the shape of the high value virtual anodes 208 is not limited to a certain kind, but the high value is virtually positive
Pole 208 is at least porous structure, so that the fluid connection in the upper chamber and lower chambers.Such as the high value virtual anodes
208 can select the porous skeleton structure not reacted with electroplate liquid, play a supporting role.
Step 3 is executed, the wafer 207 is put into the upper chamber.
Specifically, the wafer is immersed in the indoor liquid of the epicoele, it can be with by the setting on the barrier layer
Electroplate liquid below and the reagent above it are kept apart, or can stop that the electroplate liquid of lower section passes through the resistance
Barrier enters upper chamber, and whether the indoor reagent of epicoele does not limit into lower chambers.
The indoor reagent of the epicoele does not react with the wafer in this step, therefore even if by the wafer of energization
It immerses in the indoor reagent of epicoele, the wafer of energization will not react with solution and cause the defect that can not be made up.
It executes step 4 and the barrier layer is removed, so that described when the wafer is completely immersed in the non-electrical plating solution
Upper chamber is connected to lower chambers and executes electroplating technology to the wafer.
Specifically, as described in Figure 3, it after the wafer is completely immersed in the non-electrical plating solution, then can remove described
Barrier layer is connected to after removing the barrier layer between the upper chamber and lower chambers, to ion can with free diffusing, on
Chamber and the solution of bottom chamber may eventually form the uniform electroplate liquid of concentration.
Wherein, it is also rotatably arranged in the main body of the reaction chamber positioned at the indoor reel of the reaction chamber, institute
Barrier layer is stated to be wrapped on the reel.
Specifically, realize that the switching of state and retracted state is stretched out on the barrier layer by shaking the reel.Wherein institute
Common various reels in machinery field can be selected by stating reel, not further to be limited.
Wherein, anode electrode 202 and cathode electrode 204 are additionally provided in the reaction chamber.
Optionally, the cathode electrode is set to the top of the reaction chamber, is located at the top on the barrier layer, such as
Positioned at the top of the upper chamber.The anode electrode is set to the bottom of the reaction chamber, is located under the barrier layer
Side, such as positioned at the bottom of the lower chambers.
The anode electrode selects the metal material needed to form in electroplating process, such as when electro-coppering, the anode
Electrode selects metallic copper.
Become being electroplated after uniform solution in the electroplate liquid, such as plating forms metallic copper, plating specifically
Technique can select conventional method, repeat no more.
Optionally, the step of can also further include annealing after the metallic copper is formed, annealing can 80 DEG C-
It is carried out 2-4 hours at 160 DEG C, to promote copper to recrystallize, long big crystal grain reduces resistance and improves stability.
Step 5 is executed, after completing the plating, the barrier layer is returned in the reaction chamber, and will be described
It is divided into upper chamber and lower chambers between reaction chamber, while injecting a small amount of pure water in the upper chamber, in case lower wafer soaks
Enter.
So far, the introduction of the correlation step of the electro-plating method of the embodiment of the present invention is completed.After the above step, may be used also
To include other correlation steps, details are not described herein again.Also, in addition to the foregoing steps, the preparation method of the present embodiment may be used also
To include other steps among above-mentioned each step or between different steps, these steps can be by the prior art
Various techniques realize that details are not described herein again.
The present invention provides a kind of electro-plating method and devices, in order to avoid wafer is in the moment electricity for immersing the reaction chamber
Flow through big, one layer of barrier layer of setting inside the reaction chamber.Wafer is before entering liquid level, and barrier layer is always in the reaction
Chamber interior, after wafer immersed in liquid level, barrier layer is withdrawn.It can be described anti-in immersion by the wafer by the barrier layer
Answer the moment of chamber to be isolated with electroplate liquid, to solve the problems, such as that immediate current is excessive, further increase device performance and
Yield.
Embodiment two
The present invention also provides a kind of electroplanting device, described device includes：
Main body is equipped with reaction chamber；
Barrier layer, setting on the body, and can switch between stretching state, retracted state：
The barrier layer is set under the stretching state inside the reaction chamber, will be between the reaction chamber
It is divided into upper chamber and lower chambers, wherein the lower chambers are not sent out for holding with wafer for holding electroplate liquid, the upper chamber
The non-electrical plating solution of raw reaction；
Under the retracted state, the upper chamber is connected to lower chambers on the barrier layer.
Wherein, the lower chambers are surrounded by the lower sides of reaction chamber 201, as shown in figure 3, the barrier layer is described
Under stretching state, the electroplate liquid 203 and anode electrode 202 are provided in the lower chambers, and the high value is empty
Quasi- anode (High Resistance Virtual Anode, HRVA) 208 is also disposed on the bottom chamber, and is located at institute
State the top of lower chambers.
Wherein, under the stretching state, the upper chamber (is not shown in figure and surrounds the upper chamber on the barrier layer
Side wall) in be provided with cathode electrode 204 and non-electrical plating solution 205.
Wherein, the shape of the upper chamber and the lower chambers is not limited to a certain kind, such as the upper chamber and institute
The vertical view for stating lower chambers is round, rectangular (square, rectangle) or polygon etc., and details are not described herein.
In addition, the size of the upper chamber and the lower chambers can be identical, difference is may be set to be, in the embodiment
In, although as shown in figure 3, the side wall of upper chamber is not shown in figure, the opening size of the lower chambers is less than on described
The opening size of chamber, formation are up big and down small structure.
Specifically, as shown in Fig. 2, there are two types of liquid for tool in the reaction chamber main body 201, below the barrier layer
For electroplate liquid 203 (virgin makeup solution, VMS), the composition of the electroplate liquid includes water, sulfuric acid, copper ion, chlorine
Ion and some organic additives etc..
Wherein, the additive includes some macromolecular additives, such as flat dose (LEVELER), accelerator
(ACCELERATORE) and inhibitor (SUPPRESSOR).
And the liquid above the barrier layer is the reagent 205 not reacted with the wafer, including various inertia
Reagent, wherein being preferably that pure water will not be right after removing the barrier layer as a part for electroplate liquid in the present invention
Electroplate liquid impacts, and will not hinder the diffusion of various ions in electroplate liquid, to make electroplating technology be smoothed out.
It should be noted that the liquid above the barrier layer is not limited to pure water, can also be it is various not
The inertia solution to react with wafer, specifically how using can select according to actual needs.
Wherein, the material for stopping electroplate liquid (including water, copper sulphate and additive) is chosen on the barrier layer.
Optionally, cattail and reed waterproof ventilated membrane is chosen on the barrier layer.
Wherein, since cattail and reed waterproof ventilated membrane, hardness and finite thickness are chosen in the barrier layer, in order to be better achieved
High value virtual anodes (High Resistance Virtual Anode, HRVA) are arranged in isolation effect in the lower chambers
208, under the stretching state, the high value virtual anodes are located at the bottom chamber, the stretching shape on the barrier layer
Barrier layer under state is set to above the high value virtual anodes, to play a supporting role to the barrier layer.
Wherein, the shape of the high value virtual anodes 208 is not limited to a certain kind, but the high value is virtually positive
Pole 208 is at least porous structure, so that the fluid connection in the upper chamber and lower chambers.Such as the high value virtual anodes
208 can select the porous skeleton structure not reacted with electroplate liquid, only play a supporting role.
Described device further includes：It can be rotatably set in the main body and be located at the indoor reel of the reaction chamber, institute
Barrier layer is stated to be wrapped on the reel.
Specifically, realize that the switching of state and retracted state is stretched out on the barrier layer by shaking the reel.Wherein institute
Common various reels in machinery field can be selected by stating reel, not further to be limited.
Be connected between the upper chamber and lower chambers after removing the barrier layer, to ion can with free diffusing,
The solution of upper chamber and bottom chamber may eventually form the uniform electroplate liquid of concentration.
Wherein, anode electrode 202 and cathode electrode 204 are additionally provided in the reaction chamber.
Optionally, the cathode electrode is set to the top of the reaction chamber, is located at the top on the barrier layer, such as
Positioned at the top of the upper chamber.The anode electrode is set to the bottom of the reaction chamber, is located under the barrier layer
Side, such as positioned at the bottom of the lower chambers.
The anode electrode selects the metal material needed to form in electroplating process, such as when electro-coppering, the anode
Electrode selects metallic copper.
The present invention provides a kind of electro-plating method and devices, in order to avoid wafer is in the moment electricity for immersing the reaction chamber
Flow through big, one layer of barrier layer of setting inside the reaction chamber.Wafer is before entering liquid level, and barrier layer is always in the reaction
Chamber interior, after wafer immersed in liquid level, barrier layer is withdrawn.It can be described anti-in immersion by the wafer by the barrier layer
Answer the moment of chamber to be isolated with electroplate liquid, to solve the problems, such as that immediate current is excessive, further increase device performance and
Yield.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (11)
1. a kind of wafer electro-plating method, which is characterized in that the method includes：
Wafer to be electroplated is provided, and is powered to the wafer；
There is provided reaction chamber, be provided with barrier layer in the reaction chamber, will be divided between the reaction chamber upper chamber and
Lower chambers are provided in the upper chamber and do not react with the wafer wherein being provided with electroplate liquid in the bottom chamber
Non-electrical plating solution；
The wafer is put into the upper chamber, when the wafer is completely immersed in the non-electrical plating solution, removes the blocking
Layer, so that the upper chamber is connected to lower chambers and executes electroplating technology to the wafer.
2. according to the method described in claim 1, it is characterized in that, the non-electrical plating solution includes pure water.
3. according to the method described in claim 1, it is characterized in that, the material for stopping the electroplate liquid is chosen on the barrier layer
Material.
4. according to the method described in claim 3, it is characterized in that, cattail and reed waterproof ventilated membrane is chosen on the barrier layer.
5. according to the method described in claim 1, it is characterized in that, being additionally provided in lower chambers below the barrier layer
Support the high value virtual anodes on the barrier layer.
6. a kind of electroplanting device, which is characterized in that described device includes：
Main body is equipped with reaction chamber；
Barrier layer, setting on the body, and can switch between stretching state, retracted state：
The barrier layer is set under the stretching state inside the reaction chamber, will be divided between the reaction chamber
Upper chamber and lower chambers, wherein the lower chambers do not occur instead for holding electroplate liquid, the upper chamber for holding with wafer
The non-electrical plating solution answered；
Under the retracted state, the upper chamber is connected to lower chambers on the barrier layer.
7. device according to claim 6, which is characterized in that choose the material for stopping the electroplate liquid in the barrier layer
Material.
8. device according to claim 7, which is characterized in that choose cattail and reed waterproof ventilated membrane in the barrier layer.
9. device according to claim 6, which is characterized in that be additionally provided with the support barrier layer in the reaction chamber
High value virtual anodes, under the stretching state, the high value virtual anodes are located at the lower chambers on the barrier layer
Interior, the barrier layer under the stretching state is set to above the high value virtual anodes.
10. device according to claim 6, which is characterized in that be additionally provided with cathode electrode and sun in the reaction chamber
Pole electrode, the barrier layer is under the stretching state, and the cathode electrode is located in the upper chamber, the anode electrode position
In the bottom chamber.
11. device according to claim 6, which is characterized in that further include：It can be rotatably set in the main body and position
In the indoor reel of the reaction chamber, the barrier layer is wrapped on the reel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710032460.6A CN108315792A (en) | 2017-01-16 | 2017-01-16 | A kind of wafer electro-plating method and electroplanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710032460.6A CN108315792A (en) | 2017-01-16 | 2017-01-16 | A kind of wafer electro-plating method and electroplanting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113363152A (en) * | 2020-03-06 | 2021-09-07 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
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| US20100147679A1 (en) * | 2008-12-17 | 2010-06-17 | Novellus Systems, Inc. | Electroplating Apparatus with Vented Electrolyte Manifold |
| CN102459717B (en) * | 2009-06-09 | 2014-12-10 | 诺发系统有限公司 | Method and apparatus for electroplating |
| CN105821457A (en) * | 2015-01-22 | 2016-08-03 | 朗姆研究公司 | Apparatus and method for dynamic control of plated uniformity with the use of remote electric current |
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| CN1961099A (en) * | 2003-12-05 | 2007-05-09 | 塞米用具公司 | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US20100147679A1 (en) * | 2008-12-17 | 2010-06-17 | Novellus Systems, Inc. | Electroplating Apparatus with Vented Electrolyte Manifold |
| CN102459717B (en) * | 2009-06-09 | 2014-12-10 | 诺发系统有限公司 | Method and apparatus for electroplating |
| CN105821457A (en) * | 2015-01-22 | 2016-08-03 | 朗姆研究公司 | Apparatus and method for dynamic control of plated uniformity with the use of remote electric current |
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| CN113363152A (en) * | 2020-03-06 | 2021-09-07 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
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