CN108315722A - A kind of arc-shaped electrode plasma enhanced chemical vapor deposition unit - Google Patents
A kind of arc-shaped electrode plasma enhanced chemical vapor deposition unit Download PDFInfo
- Publication number
- CN108315722A CN108315722A CN201711416199.6A CN201711416199A CN108315722A CN 108315722 A CN108315722 A CN 108315722A CN 201711416199 A CN201711416199 A CN 201711416199A CN 108315722 A CN108315722 A CN 108315722A
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- arc
- electrode
- shaped electrode
- circular electrode
- circular
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of arc-shaped electrode plasma CVD device, can avoid the opposite sliding of cable and electrode between plate, eliminate scratch defects.The device unreel room, coating chamber, the winding chamber of room three are connected, form vacuum cavity, vacuum pump is connected with the vacuum cavity, formation extract system；Winding mechanism is connected with deviation correction mechanism, and circular electrode and arc-shaped electrode are mounted in coating chamber, and base material is close to circular electrode surface and is rotated synchronously with circular electrode；Supply gas unit, radio frequency power source is connected with arc-shaped electrode, working gas is sent between circular electrode and arc-shaped electrode by unit of supplying gas, under the action of radio frequency power source, plasma is generated between circular electrode and arc-shaped electrode, basement membrane is tightly attached on circular electrode, the movement of basement membrane, the depositing coating on basement membrane are controlled by winding mechanism and deviation correction mechanism.
Description
Technical field
The present invention relates to a kind of arc-shaped electrode plasma activated chemical vapour deposition (PECVD) devices, belong to Surface Engineering skill
Art field.Silicon coating is prepared on a variety of base materials using the present invention, for low orbit spacecraft surfacing
Elemental oxygen protects and the high-barrier coating of the product for civilian use.
Background technology
Plasma enhanced chemical vapor deposition (PECVD) technology is to utilize plasma auxiliary chemical vapor deposition
(CVD) one of mode is widely used in obtaining low temperature thin film of good performance.Generally use parallel plate electrode, in low pressure
On the two poles of the earth in container plus high frequency voltage, generation radio frequency discharge form plasma, and radio-frequency power supply is used and inductively or capacitively coupled
Mode.In commercial Application, it usually needs higher deposition rate simultaneously ensures the uniformity of film on large area substrates, film it is uniform
Property includes the uniformity consistency of film thickness being uniformly distributed with film performance.The equipment applied at present is to be coated with large area thin
Existing main problem is when film：1) radio-frequency current causes plasma electric in the inhomogeneities of plasma electrode edge distribution
Position is unevenly distributed with power density.2) when the size of plasma or substrate is much larger than wavelength, standing wave effect causes etc.
The uneven distribution of gas ions.3) due in the mobility of plasma and gas injection process and field distribution it is uneven
Property, cause the heterogeneity of film thickness and structure.4) during continuous coating, plate electrode is easy to generate base material and draw
Wound.
The film of high quality in order to obtain depends on the optimization of plurality of devices and process conditions.Including：Chamber structure, electricity
The mutual matchings such as pole shape, interelectrode distance, gas flow distribution, field distribution, plasma electrical source running parameter
And optimization.And these parameters influence the performances such as defects count, adhesive force, compactness, the uniformity of depositing coating.
With the increase of takeup type PECVD plated film demands, parallel flat plasma enhanced chemical vapor deposition equipment is sudden and violent
Expose many technological deficiencies, such as：Non-uniform electric, upper/lower electrode scratch basement membrane, coating temperature is difficult to control etc., not
Can meet the needs of high quality P ECVD plated films.Space is with cable between solar battery array plate by the copper foil and thickness of thickness 0.28mm
Two kinds of Material claddings of 25um polyimides form, and are a kind of semirigid structure, width about 0.25m, length 40m.If using
Parallel flat PECVD filming equipments, in coating process, electrode is easy the polyimide material of cable surface between scuffing plate, leads
Cause the film quality being coated with not high.
Invention content
The present invention provides a kind of arc-shaped electrode plasma CVD device, can avoid cable and electrode between plate
Opposite sliding, eliminate scratch defects.
A kind of arc-shaped electrode plasma CVD device, which is characterized in that the device is by unreeling room, up- coiler
Structure, ion source, circular electrode, coating chamber wind room, deviation correction mechanism, vacuum system, arc-shaped electrode, unit of supplying gas, radio-frequency power
Source forms；
Wherein, unreel room, coating chamber, the winding chamber of room three are connected, form vacuum cavity, vacuum pump and the vacuum chamber
Body is connected, and forms extract system；Winding mechanism is connected with deviation correction mechanism, and circular electrode and arc-shaped electrode are mounted in coating chamber,
Base material is close to circular electrode surface and is rotated synchronously with circular electrode；Supply gas unit by working gas be sent into circular electrode with
Between arc-shaped electrode, under the action of radio frequency power source, plasma is generated between circular electrode and arc-shaped electrode, basement membrane is tight
It is attached on circular electrode, the movement of basement membrane, the depositing coating on basement membrane is controlled by winding mechanism and deviation correction mechanism.
Winding mechanism is made of unreeling shaft and Scroll, realizes the winding of base material.
A kind of arc-shaped electrode plasma activated chemical vapour deposition method, by supplying gas, working gas is sent into coating chamber by unit
In circular electrode and arc-shaped electrode between, and by vacuum unit by between circular electrode and arc-shaped electrode vacuum degree maintain technique
It is required that vacuum degree；After opening radio-frequency power supply, under the action of rf electric field, generated between circular electrode and arc-shaped electrode etc.
Working gas is dissociated into active group by gas ions, and the speed of service of base material is controlled by winding mechanism and deviation correction mechanism
And tension, the active group are deposited on base material, form the film layer of needs, realization is wound on semi-rigid base material
Plated film.
Beneficial effects of the present invention：
1, the present invention is since discharge electrode is using round and arcuate structure, and circular electrode is rotated with certain speed,
Base material is close to circular electrode and is rotated synchronously with circular electrode, is slided relatively with interelectrode so as to avoid base material
It is dynamic, it eliminates electrode and scuffing defect is generated to base material, effectively improve film quality.
2, of the invention since base material is close to circular electrode, control base can be reached by controlling the temperature of circular electrode
The purpose of bottom material temperature achievees the purpose that improve film quality so as to accurately control coating temperature parameter.
3, the present invention forms three Chamber vacuum rooms by unreeling room, coating chamber and winding room, and plating is evacuated down to by vacuum system
Film vacuum degree only generates plasma in arc chamber, can avoid the pollution of other rooms.
Description of the drawings
Fig. 1 PECVD filming equipment structural schematic diagrams.
Specific implementation mode
The invention will be described further below in conjunction with the accompanying drawings.
As shown in Figure 1, the present invention uses arc-shaped electrode PECVD filming equipments, it is characterised in that：By unreeling room 1, up- coiler
Structure 2, ion source 3, circular electrode 4, coating chamber 5 wind room 6, deviation correction mechanism 7, vacuum system 8, arc-shaped electrode 9, unit of supplying gas
10, radio frequency power source 11 forms.
Wherein：Unreel room 1, coating chamber 5, the winding chamber of room 6 three are connected, form vacuum cavity, vacuum pump with it is described true
Cavity body is connected, and forms extract system；Winding mechanism 2 is connected with deviation correction mechanism 7, and winding mechanism 2 is by unreeling shaft and Scroll group
At realizing the winding of base material；Circular electrode 4 and arc-shaped electrode 9 are mounted in coating chamber 5, and liquid is passed through inside circular electrode
State medium, may be temperature controlled, and diameter 1mm stomatas below are laid on arc-shaped electrode surface, and pitch of holes is not less than 30mm, together
When arc-shaped electrode appearance carry out electric field shielding processing, so that discharge electric field is limited between circular electrode and arc-shaped electrode, substrate
Material is close to 4 surface of circular electrode and is rotated synchronously with circular electrode 4；Working gas is sent into circular electrode 4 by unit 10 of supplying gas
Between arc-shaped electrode 9, under the action of radio frequency power source 11, plasma, the film layer needed are generated.It supplies gas unit 10
Working gas is sent into vacuum chamber, radio frequency power source 3 is opened, plasma is generated between circular electrode 4 and arc-shaped electrode 9
Body, basement membrane are tightly attached on circular electrode 4, and the movement of basement membrane is controlled by winding mechanism 2 and deviation correction mechanism 7, is deposited on basement membrane
The coating of thickness is needed, while electrode being avoided to generate cut to base material, improves coating quality.
A kind of arc-shaped electrode plasma activated chemical vapour deposition method, by supplying gas, working gas is sent into circular electric by unit
Between pole and arc-shaped electrode, and by vacuum unit by between circular electrode and arc-shaped electrode vacuum degree maintain technological requirement vacuum
Degree；After opening radio-frequency power supply, under the action of rf electric field, plasma is generated between circular electrode and arc-shaped electrode, it will
Working gas is dissociated into active group, and the active group is deposited on base material, forms the film layer of needs；And winding mechanism
The speed of service and tension that base material is controlled with deviation correction mechanism, to realize the winding film plating on semi-rigid base material.
In deposition process, hexamethyldisiloxane (monomer) and oxygen are as working gas.Unit supply gas by monomer and oxygen
Pneumatic transmission enters between circular electrode and arc-shaped electrode, and under radio-frequency power supply effect, the chemical bond of hexamethyldisiloxane and oxygen is beaten
It is disconnected, plasma is generated, a variety of siliceous active groups are formed.These active groups cable surface between plate deposits, and is caused
Close siloxanes film layer.
As a result as follows：
Silicon coating technique is prepared on 1 Kapton of table
2 thicknesses of layers test result of table
Claims (6)
1. a kind of arc-shaped electrode plasma CVD device, which is characterized in that the device is by unreeling room, up- coiler
Structure, ion source, circular electrode, coating chamber wind room, deviation correction mechanism, vacuum system, arc-shaped electrode, unit of supplying gas, radio-frequency power
Source forms；
Wherein, unreel room, coating chamber, the winding chamber of room three are connected, form vacuum cavity, vacuum pump and the vacuum cavity phase
Even, extract system is formed；Winding mechanism is connected with deviation correction mechanism, and circular electrode and arc-shaped electrode are mounted in coating chamber, substrate
Material is close to circular electrode surface and is rotated synchronously with circular electrode；Working gas is sent into circular electrode and arc by unit of supplying gas
Between electrode, under the action of radio frequency power source, plasma is generated between circular electrode and arc-shaped electrode, basement membrane is tightly attached to
On circular electrode, the movement of basement membrane, the depositing coating on basement membrane are controlled by winding mechanism and deviation correction mechanism.
2. a kind of arc-shaped electrode plasma CVD device as described in claim 1, which is characterized in that the volume
It is made of unreeling shaft and Scroll around mechanism, realizes the winding of base material.
3. a kind of arc-shaped electrode plasma CVD device as claimed in claim 1 or 2, which is characterized in that institute
It states and is passed through liquid medium inside circular electrode, can be controlled into trip temperature.
4. a kind of arc-shaped electrode plasma CVD device as claimed in claim 1 or 2, which is characterized in that institute
It states arc-shaped electrode surface and lays diameter 1mm stomatas below, pitch of holes is not less than 30mm.
5. a kind of arc-shaped electrode plasma CVD device as claimed in claim 4, which is characterized in that the arc
Shape electrode appearance carries out electric field shielding processing, and discharge electric field is made to be limited between circular electrode and arc-shaped electrode.
6. a kind of arc-shaped electrode plasma activated chemical vapour deposition method, which is characterized in that by unit of supplying gas by working gas
It is sent between circular electrode and arc-shaped electrode in coating chamber, and by vacuum unit by the vacuum between circular electrode and arc-shaped electrode
Degree maintains the vacuum degree of technological requirement；After opening radio-frequency power supply, under the action of rf electric field, circular electrode and arc-shaped electrode
Between generate plasma, working gas is dissociated into active group, passes through winding mechanism and deviation correction mechanism and controls base material
The speed of service and tension, the active group be deposited on base material, form the film layer of needs, realize in semi-rigid substrate
Winding film plating on material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711416199.6A CN108315722A (en) | 2017-12-25 | 2017-12-25 | A kind of arc-shaped electrode plasma enhanced chemical vapor deposition unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711416199.6A CN108315722A (en) | 2017-12-25 | 2017-12-25 | A kind of arc-shaped electrode plasma enhanced chemical vapor deposition unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108315722A true CN108315722A (en) | 2018-07-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711416199.6A Pending CN108315722A (en) | 2017-12-25 | 2017-12-25 | A kind of arc-shaped electrode plasma enhanced chemical vapor deposition unit |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537749A (en) * | 2022-09-08 | 2022-12-30 | 核工业西南物理研究院 | Ion irradiation device for continuous artificial magnetic flux pinning preparation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1072734A (en) * | 1991-09-27 | 1993-06-02 | 美国Boc氧气集团有限公司 | Equipment and method that rapid plasma is handled |
| CN101629283A (en) * | 2009-07-16 | 2010-01-20 | 江苏双登集团有限公司 | Roll-to-roll plasma enhanced chemical vapor deposition device |
-
2017
- 2017-12-25 CN CN201711416199.6A patent/CN108315722A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1072734A (en) * | 1991-09-27 | 1993-06-02 | 美国Boc氧气集团有限公司 | Equipment and method that rapid plasma is handled |
| CN101629283A (en) * | 2009-07-16 | 2010-01-20 | 江苏双登集团有限公司 | Roll-to-roll plasma enhanced chemical vapor deposition device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537749A (en) * | 2022-09-08 | 2022-12-30 | 核工业西南物理研究院 | Ion irradiation device for continuous artificial magnetic flux pinning preparation |
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Application publication date: 20180724 |