CN108306725A - FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit - Google Patents

FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit Download PDF

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CN108306725A
CN108306725A CN201810173408.7A CN201810173408A CN108306725A CN 108306725 A CN108306725 A CN 108306725A CN 201810173408 A CN201810173408 A CN 201810173408A CN 108306725 A CN108306725 A CN 108306725A
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diode
memristor
connects
capacitance
anode
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杜玮嘉
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/60—Methods or arrangements for performing computations using a digital non-denominational number representation, i.e. number representation without radix; Computing devices using combinations of denominational and non-denominational quantity representations, e.g. using difunction pulse trains, STEELE computers, phase computers
    • G06F7/64—Digital differential analysers, i.e. computing devices for differentiation, integration or solving differential or integral equations, using pulses representing increments; Other incremental computing devices for solving difference equations
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/50—Adding; Subtracting
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/001—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols using chaotic signals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/556—Logarithmic or exponential functions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Amplifiers (AREA)

Abstract

The diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, it is characterised in that：The circuit is made of diode (1N4148), capacitance and resistance, and diode (1N4148) realizes that Wien bridge circuit function, capacitance and resistance form RC oscillating circuits.The present invention proposes based on the diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, realize reverse phase, addition, integral, differential, index and the logarithm operation in analog circuit, for the sine wave RC oscillating circuits for being widely used general, have many advantages, such as that the wien-bridge oscillator that oscillation is relatively stablized, waveform is good, frequency of oscillation can be continuously adjusted easily in a wider scope provides a kind of platform.

Description

FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit
Technical field
The present invention relates to a kind of computing circuit, more particularly to a kind of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor reverse phase electricity based on Wien bridge circuit Road.
Background technology
Since the physical realizability of nanoscale memristor report, in the various application circuits based on memristor, memristor Chaos circuit has obtained relatively broad research, and has a large amount of achievement to report that memristor is a kind of nonlinear circuit element, with Other three kinds of basic circuit elements carry out organic linkings, it is easy to construct it is various be based on memristor, memristor is used for chaos Research, which has produced, compares far-reaching influence, but memristor is individually applied in analog circuit, realizes mathematics In basic operation it is also fewer at home and abroad, for this purpose, the present invention proposes the diode Wen electricity with FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor Based on bridge circuit, reverse phase, addition, integral, differential, index and the logarithm operation in analog circuit are realized, to be widely used There is general sine wave RC oscillating circuits oscillation relatively to stablize, waveform is good, frequency of oscillation can easily connect in a wider scope The wien-bridge oscillator of continuous the advantages that adjusting provides a kind of platform.
Invention content
1. the FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit, it is characterised in that：The circuit is by diode (1N4148), capacitance and resistance composition, diode (1N4148) realize Wien bridge circuit function, capacitance and resistance composition RC concussions Circuit；The anode of the diode D1 connects the anode of diode D4, connects the input terminal of memristor, the cathode of the diode D1 The one end for meeting capacitance C0, connects the cathode of diode D2, and the anode of the diode D2 connects the cathode of diode D3, connects memristor The cathode of output end, the diode D2 connects one end of capacitance, and the cathode of the diode D3 connects the anode of diode D2, connects and recall The output end of device is hindered, the anode of the diode D3 connects the anode of diode D4, connects the other end of capacitance C0, is grounded, described two The anode of pole pipe D4 connects the anode of diode D3, connects the other end of capacitance C0, and ground connection, the cathode of the diode D4 connects diode The anode of D1 connects the input terminal of memristor, one end of a terminating resistor R0 of the capacitance C0, another termination of the capacitance C0 The other end of resistance R0, ground connection；Following relationship is obtained according to the circuit of diode Wien bridge circuit：
It is respectively Vm and Im, capacitance C to set broad sense memristor both ends input voltage and electric current0Both end voltage is V0, mathematics Model is：
Wherein, ρ=1/ (2nVT)；Is, n and VTDiode reverse saturation current, emission ratio and thermal voltage are indicated respectively, Thus, it is possible to derive that recalling for broad sense memristor leads expression formula and be
Electric routing resistance, memristor and operational amplifier (LF347BN) form, operational amplifier (LF347BN) U1 Negative input end by the input of the reversed circuitry phases of resistance Ri1, connect operational amplifier (LF347BN) U1's by memristor Rm Output end, the positive input terminal ground connection of operational amplifier (LF347BN) U1, the positive supply termination of operational amplifier (LF347BN) U1 The negative supply of VCC, operational amplifier (LF347BN) U1 terminate VEE；Following relationship is obtained according to negative circuit：
If the electric current on resistance Ri1 is IRi1, the electric current on memristor Rm is IRm1, voltage Vm1,
It is obtained according to empty short and empty disconnected principle：
Advantageous effect：The present invention proposes based on the diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, realizes Reverse phase, addition, integral, differential, index in analog circuit and logarithm operation, for the sine wave RC oscillation electricity for being widely used general Road has many advantages, such as the Wen that oscillation is relatively stablized, waveform is good, frequency of oscillation can be continuously adjusted easily in a wider scope Bridge oscillator provides a kind of platform.
Description of the drawings
Fig. 1 is the diode Wien Bridge Circuit for realizing FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor.
Fig. 2 is to realize the reverse phase computing circuit based on memristor.
Specific implementation mode
The present invention is further described in detail with preferred embodiment below in conjunction with the accompanying drawings, referring to Fig. 1-Fig. 2.
1. the diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, it is characterised in that：The circuit is by diode (1N4148), capacitance and resistance composition, diode (1N4148) realize Wien bridge circuit function, capacitance and resistance composition RC concussion electricity Road；The anode of the diode D1 connects the anode of diode D4, connects the input terminal of memristor, and the cathode of the diode D1 connects electricity The one end for holding C0, connects the cathode of diode D2, the anode of the diode D2 connects the cathode of diode D3, connects the output of memristor End, the cathode of the diode D2 connect one end of capacitance, and the cathode of the diode D3 connects the anode of diode D2, connects memristor Output end, the anode of the diode D3 connects the anode of diode D4, connects the other end of capacitance C0, is grounded, the diode The anode of D4 connects the anode of diode D3, connects the other end of capacitance C0, and ground connection, the cathode of the diode D4 meets diode D1 Anode, connect the input terminal of memristor, one end of a terminating resistor R0 of the capacitance C0, another termination electricity of the capacitance C0 Hinder the other end of R0, ground connection；Following relationship is obtained according to the circuit of diode Wien bridge circuit：
It is respectively Vm and Im, capacitance C to set broad sense memristor both ends input voltage and electric current0Both end voltage is V0, mathematics Model is：
Wherein, ρ=1/ (2nVT)；Is, n and VTDiode reverse saturation current, emission ratio and thermal voltage are indicated respectively, Thus, it is possible to derive that recalling for broad sense memristor leads expression formula and be
2, the diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor according to claim 1, based on the anti-of memristor Circuitry phase it is characterized in that：The electricity routing resistance, memristor and operational amplifier (LF347BN) composition, the operational amplifier (LF347BN) negative input end of U1 connects operational amplifier by the input of the reversed circuitry phases of resistance Ri1 by memristor Rm (LF347BN) output end of U1, the positive input terminal ground connection of operational amplifier (LF347BN) U1, operational amplifier (LF347BN) The positive supply of U1 terminates VCC, and the negative supply of operational amplifier (LF347BN) U1 terminates VEE；It is obtained with ShiShimonoseki according to negative circuit It is formula：
If the electric current on resistance Ri1 is IRi1, the electric current on memristor Rm is IRm1, voltage Vm1,
It is obtained according to empty short and empty disconnected principle：
Certainly, above description is not limitation to invention, and the present invention is also not limited to the example above, the art it is general The variations, modifications, additions or substitutions that logical technical staff is made in the essential scope of the present invention, also belong to the protection of the present invention Range.

Claims (1)

1. the FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit, it is characterised in that：The FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER of the Wien bridge circuit Memristor is made of diode (1N4148), capacitance and resistance, and diode (1N4148) realizes Wien bridge circuit function, capacitance and electricity Resistance composition RC oscillating circuits；The anode of the diode D1 connects the anode of diode D4, connects the input terminal of memristor, two pole The cathode of pipe D1 connects one end of capacitance C0, connects the cathode of diode D2, and the anode of the diode D2 connects the cathode of diode D3, The output end of memristor is connect, the cathode of the diode D2 connects one end of capacitance, and the cathode of the diode D3 meets diode D2 Anode, connect the output end of memristor, the anode of the diode D3 connects the anode of diode D4, connects the other end of capacitance C0, Ground connection, the anode of the diode D4 connect the anode of diode D3, connect the other end of capacitance C0, are grounded, the diode D4's Cathode connects the anode of diode D1, connects the input terminal of memristor, one end of a terminating resistor R0 of the capacitance C0, the capacitance The other end of another terminating resistor R0 of C0, ground connection；Following relationship is obtained according to the circuit of diode Wien bridge circuit：
It is respectively Vm and Im, capacitance C to set broad sense memristor both ends input voltage and electric current0Both end voltage is V0, mathematical model For：
Wherein, ρ=1/ (2nVT)；Is, n and VTDiode reverse saturation current, emission ratio and thermal voltage are indicated respectively, as a result, It can derive that recalling for broad sense memristor leads expression formula and be
FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit is by resistance, memristor and operational amplifier (LF347BN) group At the negative input end of operational amplifier (LF347BN) U1 passes through memristor by the input of the reversed circuitry phases of resistance Ri1 Rm connects the output end of operational amplifier (LF347BN) U1, the positive input terminal ground connection of operational amplifier (LF347BN) U1, and operation is put The positive supply of big device (LF347BN) U1 terminates VCC, and the negative supply of operational amplifier (LF347BN) U1 terminates VEE；According to reverse phase Circuit obtains following relationship：
If the electric current on resistance Ri1 is IRi1, the electric current on memristor Rm is IRm1, voltage Vm1,
It is obtained according to empty short and empty disconnected principle：IRi1=IRm1
Uo1=Vm1
CN201810173408.7A 2016-05-24 2016-05-24 FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit Pending CN108306725A (en)

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CN201810173836.XA Withdrawn CN108399062A (en) 2016-05-24 2016-05-24 Differentiator computing circuit based on memristor
CN201810173408.7A Pending CN108306725A (en) 2016-05-24 2016-05-24 FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor negative circuit based on Wien bridge circuit
CN201810173840.6A Pending CN108279862A (en) 2016-05-24 2016-05-24 Index device computing circuit based on memristor
CN201610348685.8A Active CN106020767B (en) 2016-05-24 2016-05-24 Adder computing circuit based on FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor
CN201810173470.6A Pending CN108388419A (en) 2016-05-24 2016-05-24 Logarithm device computing circuit based on memristor
CN201810173543.1A Withdrawn CN108304157A (en) 2016-05-24 2016-05-24 Integrator computing circuit based on memristor

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CN201610348685.8A Active CN106020767B (en) 2016-05-24 2016-05-24 Adder computing circuit based on FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor
CN201810173470.6A Pending CN108388419A (en) 2016-05-24 2016-05-24 Logarithm device computing circuit based on memristor
CN201810173543.1A Withdrawn CN108304157A (en) 2016-05-24 2016-05-24 Integrator computing circuit based on memristor

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CN107909146B (en) * 2017-11-13 2021-09-17 中国科学院微电子研究所 Neuron circuit based on volatile threshold transition device
CN109117590B (en) * 2018-09-12 2022-11-08 成都师范学院 Voltage fractional order integral control type memristor
CN111337811B (en) * 2020-03-23 2021-03-30 电子科技大学 Memristor test circuit

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CN108304157A (en) 2018-07-20
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CN108388419A (en) 2018-08-10
CN108279862A (en) 2018-07-13

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Application publication date: 20180720