CN108306425A - Restructural CMOS RF energy acquisition systems - Google Patents
Restructural CMOS RF energy acquisition systems Download PDFInfo
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- CN108306425A CN108306425A CN201810189965.8A CN201810189965A CN108306425A CN 108306425 A CN108306425 A CN 108306425A CN 201810189965 A CN201810189965 A CN 201810189965A CN 108306425 A CN108306425 A CN 108306425A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/20—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Abstract
The invention discloses a kind of restructural CMOS RF energy acquisition systems, including：Low-power branch, for the RF energy of lower-wattage to be converted into DC energy；High power branch, for the RF energy of higher-wattage to be converted into DC energy, including：Rectifier structure and tunable impedance matching networks, the rectifier structure includes several rectifier units for carrying out series, parallel connection switching, the high power branch can configure different tunable impedance matching networks and rectifier structure according to the RF energy of different input power, and the RF energy of different input power is maximumlly converted into DC energy；And control circuit, the switching of low-power branch and high power branch is automatically controlled according to the RF energy of different input power and controls the configuration of tunable impedance matching networks and rectifier structure in high power branch.The system is realized to RF energy wide dynamic range, efficient energy acquisition, and can effectively improve the sensitivity of energy acquisition.
Description
Technical field
The disclosure belongs to field of radio frequency circuit design, is related to a kind of restructural CMOS RF energy acquisition systems.
Background technology
In recent years, wireless sensor network (WSN) is widely applied.Wireless sensor node not only needs smaller ruler
Very little and lower power consumption, and may be applied in more severe natural environment either implantable medical device in view of it,
Replacement and the wired charging that can not carry out battery, this requires wireless sensor nodes should also have stronger self-powered ability.
RF energy acquisition technique is the preferred option for solving the problems, such as energy constraint in WSN at present, i.e., by capturing in ambient enviroment
Faint radio frequency energy, is converted into electric energy, and the supply voltage needed for work is provided for low-power consumption sensor node.
Although RF energy acquisition technique has good application prospect, it is also encountered by lot of challenges：First, environment
In available RF signal power it is very faint, the only magnitude of μ W, needed for being collected from the source of radio frequency energy of μ W magnitudes
DC voltage, RF energy acquisition system must have highly sensitive and high efficiency should reduce to improve system sensitivity
The cut-in voltage of rectifier；Secondly, unpredictable variation can occur at any time for the RF input power of RF energy acquisition system,
These variations can influence the energy conversion efficiency of system indirectly.Therefore, the raising of RF energy acquisition system efficiency cannot be
Solely improve the efficiency under a certain specific input power, but should consider how solve efficiency with input power variation without
It is disconnected to change this problem, try to keep relatively high energy conversion efficiency in broader input power range.This is just needed
RF energy acquisition system has self-tuning function, internal system rectification can be adaptively adjusted according to the variation of input power
The structure or parameter of device and impedance matching network keep system effectiveness in a relatively high value.
Thus, it, efficiently can self-adapting tuning there is an urgent need for one for the above RF energy acquisition system problem encountered
RF energy acquisition system, make system that can keep a higher energy conversion efficiency in wide input power range.
Invention content
(1) technical problems to be solved
It is set forth above at least partly to solve present disclose provides a kind of restructural CMOS RF energy acquisition systems
The technical issues of.
(2) technical solution
According to one aspect of the disclosure, a kind of restructural CMOS RF energy acquisition systems are provided, including：Low work(
Rate branch, for the RF energy of lower-wattage to be converted into DC energy；High power branch is used for the radio frequency of higher-wattage
Energy is converted into DC energy, including：Rectifier structure and tunable impedance matching networks, the rectifier structure include it is several can
The rectifier unit of series, parallel connection switching is carried out, which can match according to the RF energy of different input power
Different tunable impedance matching networks and rectifier structure are set, the RF energy of different input power is maximumlly converted into
DC energy；And control circuit, low-power branch and high power branch are automatically controlled according to the RF energy of different input power
The configuration of tunable impedance matching networks and rectifier structure in the switching on road and control high power branch.
In some embodiments of the present disclosure, low-power branch has input, output end and control terminal, input
End is connected with radio-frequency antenna, and output end is connected with the output end of CMOS RF energy acquisition systems；High power branch has defeated
Enter end, output end and control terminal, input terminal is connected with radio-frequency antenna, output end and CMOS RF energy acquisition systems
Output end be connected；There is control circuit input terminal and control word output end, input terminal to be acquired respectively with CMOS RF energies
The output end of system is connected with reference voltage, control word output end respectively with the control terminal of low-power branch and high power branch
Control terminal be connected.
In some embodiments of the present disclosure, high power branch also includes：Switch S1, switch S1With tunable impedance matching
Network is connected；And switch S2, it is connected with the output end of rectifier structure；Wherein, rectifier structure, with tunable impedance matching
Network is connected, including：Second rectifier, third rectifier and switching group, wherein switching group be set to the second rectifier with
Between third rectifier, realizes that the second rectifier and the series and parallel of third rectifier are converted, make the second rectifier, third rectification
Device constitutes changeable rectifier structure in series or in parallel with each other.
In some embodiments of the present disclosure, the second rectifier is identical with the structure of third rectifier.
In some embodiments of the present disclosure, rectifier unit is cross coupling structure RF-DC rectifiers.
In some embodiments of the present disclosure, tunable impedance matching networks include：Capacitance C1~C4, inductance L1~L4,
NMOS switch pipe Mn1~Mn4, two rf inputs RFin +、RFin -, two RF output end RFout +、RFout -It is controlled with two
Hold G1、G2；Wherein, capacitance C1With NMOS switch pipe Mn1Connection constitutes the first branch；Capacitance C2With NMOS switch pipe Mn2Connection, structure
At the second branch；The first branch is in parallel with the second branch, capacitance C1、C2Respectively with rf inputs RFin +It is connected, NMOS switch pipe
Mn1、Mn2Respectively with rf inputs RFin -It is connected；Capacitance C3With NMOS switch pipe Mn3Connection constitutes third branch；Capacitance C4With
NMOS switch pipe Mn4Connection constitutes the 4th branch；Third branch and the 4th branch circuit parallel connection, in capacitance C2、C3Between be provided with electricity
Feel L1, in NMOS switch pipe Mn2、Mn3Between be provided with inductance L3；Include capacitance C in the 4th branch4One end be connected with inductance L2,
Inductance L2With RF output end RFout +It is connected；Include NMOS switch pipe M in the 4th branchn4One end be connected with inductance L4, should
Inductance L4With RF output end RFout -It is connected；Control terminal G1Respectively with switching tube Mn1, switching tube Mn3Grid connection, control terminal G2
Respectively with switching tube Mn2, switching tube Mn4Grid connection.
In some embodiments of the present disclosure, rectifier unit includes：Capacitance C1、C2, NMOS tube Mn1、Mn2, PMOS tube Mp1、
Mp2；Wherein, C1One end and tunable impedance matching networks RF output end RFout +Be connected, the other end respectively with Mn1Source
Pole and Mp1Source electrode be connected；C2One end and tunable impedance matching networks RF output end RFout -It is connected, other end difference
With Mn2Source electrode and Mp2Source electrode be connected；Mn1Drain electrode and Mn2Drain electrode be connected, Mn1Grid and Mp1Grid be connected, simultaneously
It is connected to Mn2And Mp2Source electrode, Mn1Source electrode and Mp1Source electrode be connected；Mn2Drain electrode and Mn1Drain electrode be connected, Mn2Grid with
Mp2Grid be connected, while being connected to Mn1And Mp1Source electrode, Mn2Source electrode and Mp2Source electrode be connected；Mp1With Mp2Drain electrode be connected
It connects.
In some embodiments of the present disclosure, when the input power of RF energy is between -25dBm~-17dBm,
The CMOS RF energies acquisition system generates control word by control circuit, opens low-power branch, turns off high power branch；
When the input power of RF energy is between -17dBm~0dBm, which is produced by control circuit
Raw control word, opens high power branch, turns off low-power branch.
In some embodiments of the present disclosure, when the input power of RF energy is between -17dBm~-7dBm, control
Circuit processed generates control word, and control rectifier unit carries out parallel connection, makes the CMOS RF energies acquisition system in this power model
Efficiency in enclosing is maximum, meanwhile, impedance matching network also be tuned to match with rectifier structure in parallel；When RF energy
When input power is between -7dBm~0dBm, control circuit generates control word, and control rectifier unit is connected, this is made
Efficiency of the CMOS RF energies acquisition system in this power bracket is maximum, meanwhile, impedance matching network also be tuned to string
The rectifier structure of connection matches.
In some embodiments of the present disclosure, low-power branch includes the first rectifier, and first rectifier is using medium
Threshold mos pipe.
(3) advantageous effect
It can be seen from the above technical proposal that the restructural CMOS RF energy acquisition systems that the disclosure provides, have
Following advantageous effect：
By the way that low-power branch, high power branch and control circuit is arranged, low-power branch is controlled using control circuit
With high power branch open and shut off and high power branch in rectifier and impedance matching network connection type, can
Self-adapting tuning is realized according to different input powers, is realized to RF energy wide dynamic range, height by restructural mode
The energy acquisition of efficiency；The rectifier in low-power branch uses intermediate. threshold metal-oxide-semiconductor simultaneously, can acquire fainter radio frequency
Energy can effectively improve the sensitivity of energy collecting system.
Description of the drawings
Fig. 1 is the structural representation according to CMOS RF energy acquisition systems restructural shown in one embodiment of the disclosure
Figure.
Fig. 2 is the structural schematic diagram according to the first rectifier in low-power branch shown in one embodiment of the disclosure.
Fig. 3 is the structural schematic diagram according to tunable impedance matching networks shown in one embodiment of the disclosure.
Fig. 4 is the structure according to the second rectifier and third rectifier in high power branch shown in one embodiment of the disclosure
Schematic diagram.
【Symbol description】
CMOS RF energy acquisition systems restructural 100-；
110- low-power branches；
The first rectifiers of 111-；
120- high power branches；
121- switches S1；122- tunable impedance matching networks；
The second rectifiers of 123-；124- third rectifiers；
125- switching groups；126- switches S2；
130- control circuits.
Specific implementation mode
Present disclose provides a kind of restructural CMOS RF energy acquisition systems, by the way that low-power branch, Gao Gong is arranged
Rate branch and control circuit control opening and shutting off for low-power branch and high power branch, Yi Jigao using control circuit
The connection type of rectifier and impedance matching network in power leg can realize adaptive adjust according to different input powers
It is humorous, it is realized to RF energy wide dynamic range, efficient energy acquisition by restructural mode；Simultaneously in low-power branch
Rectifier use intermediate. threshold metal-oxide-semiconductor, fainter RF energy can be acquired, the spirit of energy collecting system can be effectively improved
Sensitivity.
Following will be combined with the drawings in the embodiments of the present invention, is carried out to the technical solution in the embodiment of the present disclosure clear, complete
Site preparation describes, it is clear that described embodiment is only disclosure a part of the embodiment, instead of all the embodiments.Based on this
Embodiment in open, the every other implementation that those skilled in the art are obtained without making creative work
Example belongs to the range of disclosure protection.
To make the purpose, technical scheme and advantage of the disclosure be more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.In the disclosure, term " CMOS RF energies acquisition system " and " system " meaning phase
When；" intermediate. threshold metal-oxide-semiconductor " refers to：Threshold voltage than common threshold voltage be at half left and right metal-oxide-semiconductor, such as common threshold value electricity
Pressure is 400mV-500mV, and the threshold voltage of intermediate. threshold metal-oxide-semiconductor is 200mV or so；" RF energy of lower-wattage " with " compared with
High-power RF energy " refer in the common RF input power range of this field the RF energy of lower-wattage with compared with
High-power RF energy, such as：The range of -25dBm~-17dBm belongs to the RF energy of lower-wattage；- 7dBm~0dBm
Range belong to the RF energy of higher-wattage in specific application can be according to practical feelings compared with the RF energy of broad power band
Condition is adaptively adjusted, within the protection domain of the disclosure.
In first exemplary embodiment of the disclosure, a kind of restructural CMOS RF energies acquisition system is provided
System.
Fig. 1 is the structural representation according to CMOS RF energy acquisition systems restructural shown in one embodiment of the disclosure
Figure.
The restructural CMOS RF energy acquisition systems of the disclosure, including：Low-power branch is used for lower-wattage
RF energy is converted into DC energy；High power branch, for the RF energy of higher-wattage to be converted into DC energy, including
Rectifier structure and tunable impedance matching networks, the rectifier structure include that several series, parallel that carry out connect switching
Rectifier unit, the high power branch can configure different tunable impedance matching nets according to the RF energy of different input power
The RF energy of different input power is maximumlly converted into DC energy by network and rectifier structure；And control circuit, root
Switching and the control high power branch of low-power branch and high power branch are automatically controlled according to the RF energy of different input power
The configuration of tunable impedance matching networks and rectifier structure in road.
Shown in referring to Fig.1, restructural CMOS RF energies acquisition system 100, including：Low-power branch 110 has defeated
Enter end, output end and control terminal, input terminal is connected with radio-frequency antenna, output end and CMOS RF energy acquisition systems
Output end vo ut be connected；High power branch 120 has input, output end and control terminal, input terminal and radio frequency day
Line is connected, and output end is connected with the output end vo ut of CMOS RF energy acquisition systems；And control circuit 130, have defeated
Enter end and control word output end, input terminal respectively with the output end vo ut and reference voltage phase of CMOS RF energy acquisition systems
Even, control word output end is connected with the control terminal of the control terminal of low-power branch 110 and high power branch 120 respectively.
The restructural CMOS RF energy acquisition systems of the disclosure, in wider input power range, such as：-
25dBm~0dBm can tune the rectifier inside the CMOS RF energy acquisition systems and impedance automatically according to input power
Distribution network structure makes it all have higher power conversion efficiency in wide input power range.Specifically, when input power compared with
When faint, for example, input power value is ranging from：- 25dBm~-17dBm, the CMOS RF energies acquisition system is by controlling electricity
Road 130 generates control word, opens low-power branch 110, shutdown high power branch 120, wherein the in low-power branch 110
One rectifier 111 uses intermediate. threshold metal-oxide-semiconductor, can acquire fainter RF energy, can effectively improve energy collecting system
Sensitivity, so that the CMOS RF energies acquisition system is had higher efficiency when compared with low input power；With input power
Increase, the power conversion efficiency of the first rectifier 111 of low-power branch 110 can be gradually reduced, therefore, in order to maintain system
High efficiency, need that system is made to be switched to high power branch 120 at this time, simultaneously turn off low-power branch 110, pass through control circuit
130 generate control word, open high power branch 120, turn off low-power branch 110, and automatic according to different input powers
The connection type for adjusting rectifier and impedance matching network in high power branch 120, can realize self-adapting tuning, by that can weigh
The mode of structure is realized to RF energy wide dynamic range, efficient energy acquisition.
Below in conjunction with the accompanying drawings, each section of the restructural CMOS RF energy acquisition systems of the present embodiment is carried out detailed
It introduces.
Shown referring to Fig.1 in the present embodiment, low-power branch 110 includes the first rectifier 111, first rectifier 111
Input terminal and low-power branch 110 input terminal, i.e., be connected with radio-frequency antenna；The output end of first rectifier 111 with it is low
The output end of power leg 110 is connected with the output end vo ut of CMOS RF energy acquisition systems；First rectifier 111
Ground terminal be connected with earth signal.
Fig. 2 is the structural schematic diagram according to the first rectifier in low-power branch shown in one embodiment of the disclosure.
In order to further increase system sensitivity, intermediate. threshold is used to the first rectifier 111 of low-power branch 110
Metal-oxide-semiconductor is realized, is reduced the cut-in voltage of rectifier, can the RF energy of more low input power be converted into DC energy, had
The sensitivity for improving RF energy acquisition system of effect.
With reference to shown in Fig. 2, in the present embodiment, the first rectifier 111 includes：One direct-flow input end VinDC, a direct current
Output end VoutDC, two rf inputs RFin +And RFin -, first order rectification unit, second level rectification unit and the third level
Rectification unit；
Wherein, the direct-flow input end V of the direct-flow input end of first order rectification unit and the first rectifier 111inDCIt is connected, the
The DC output end of level-one rectification unit is connected with the direct-flow input end of second level rectification unit, two of first order rectification unit
Rf inputs respectively with two rf inputs RF of the first rectifier 111in +And RFin -It is connected.
Wherein, the direct-flow input end of second level rectification unit is connected with the DC output end of first order rectification unit, and second
The DC output end of grade rectification unit is connected with the direct-flow input end of third level rectification unit, and two of second level rectification unit penetrate
Frequency input terminal respectively with two rf inputs RF of the first rectifier 111in +And RFin -It is connected.
Wherein, the direct-flow input end of third level rectification unit is connected with the DC output end of second level rectification unit, third
The DC output end V of the DC output end and the first rectifier 111 of grade rectification unitoutDCIt is connected, the two of third level rectification unit
A rf inputs respectively with two rf inputs RF of the first rectifier 111in +And RFin -It is connected.
Shown in referring to Fig.1, in the present embodiment, high power branch 120 includes：Switch S1121, tunable impedance matching net
Network 122, the second rectifier 123, third rectifier 124, switching group 125 and switch S2126；Wherein, switch S1121 with can
Tuned impedance matching network 122 be connected, tunable impedance matching networks 122 respectively with the second rectifier 123, third rectifier
124 are connected, and switching group 125 is set between the second rectifier 123 and third rectifier 124, realize the second rectifier 123 and the
The series and parallel of three rectifiers 124 is converted, and the second rectifier 123, the composition of third rectifier 124 are connected in series or in parallel changeable
Rectifier structure, the output end of the rectifier structure and switch S2126 are connected.
The series and parallel that high power branch 120 can carry out rectifier unit according to specific input power situation is converted, example
Such as, when input power is in -17dBm~-7dBm ranges, control circuit 130, which can export control word, makes 123 He of the second rectifier
The two rectifier units of third rectifier 124 carry out parallel connection, and it is maximum to make efficiency of the system in this power bracket, together
When, tunable impedance matching networks 122 also need be tuned to match with rectifier structure in parallel.When input power continues to increase
Greatly, the efficiency of parallel-connection structure has no longer been optimal, and system then exports control word by control circuit, and rectifier structure is become the
Two rectifiers 123 and the concatenated form of the two rectifier units of third rectifier 124, make it in high input power range,
Such as：- 7dBm~0dBm, has a maximum power conversion efficiency, at the same impedance matching network also need be tuned to it is concatenated whole
Stream device structure matches.RF energy acquisition system is achieved that all have maximum power in wider input power range in this way
Transfer efficiency.
The circuit structure of high power branch 120 is specifically introduced below according to Fig. 1.
It is shown referring to Fig.1 in the present embodiment, switch S1The input terminal of 121 one end and high power branch 120, i.e. radio frequency
Antenna is connected；Switch S1121 other end is connected with the input terminal of tunable impedance matching networks 122；Tunable impedance matching
The output end of network 122 is connected with the input terminal of the second rectifier 123 and third rectifier 124 simultaneously；Second rectifier, 123 He
Switching group 125 is provided between third rectifier 124, switching group 125 includes switch SA、SBAnd SC, wherein switch SAOne end
It is connected with the output end of third rectifier 124, switch SAThe other end be connected with the ground terminal of the second rectifier 123；Switch SBOne
End is connected with the ground terminal of the second rectifier 123, switch SBThe other end be connected with earth signal；Switch SCOne end and third rectification
The output end of device 124 is connected, switch SCThe other end be connected with the output end of the second rectifier 123；Second rectifier 123 it is defeated
Outlet and switch S2126 one end is connected, at the same also with switch S in switching group 125CThe other end be connected；Second rectifier 123
Ground terminal and switching group 125 in switch SBOne end be connected, while with switch S in switching group 125AThe other end be connected；Third is whole
Flow device 124 output end simultaneously with switch S in switching group 125AAnd SCOne end be connected；Switch S2126 other end and Gao Gong
The output end of rate branch 120, i.e. the output end vo ut of CMOS RF energies acquisition system are connected.
Fig. 3 is the structural schematic diagram according to tunable impedance matching networks shown in one embodiment of the disclosure.
With reference to shown in Fig. 3, tunable impedance matching networks 122 include：Capacitance C1~C4, inductance L1~L4, NMOS switch pipe
Mn1~Mn4, two rf inputs RFin +、RFin -, two RF output end RFout +、RFout -With two control terminal G1、G2；Its
In, capacitance C1With NMOS switch pipe Mn1Connection constitutes the first branch；Capacitance C2With NMOS switch pipe Mn2Connection constitutes second
Road；Wherein, the first branch is in parallel with the second branch, capacitance C1、C2Respectively with rf inputs RFin +It is connected, NMOS switch pipe
Mn1、Mn2Respectively with rf inputs RFin -It is connected；Capacitance C3With NMOS switch pipe Mn3Connection constitutes third branch；Capacitance C4With
NMOS switch pipe Mn4Connection constitutes the 4th branch；Wherein, third branch and the 4th branch circuit parallel connection, in capacitance C2、C3Between be arranged
There is inductance L1, in NMOS switch pipe Mn2、Mn3Between be provided with inductance L3；Include capacitance C in the 4th branch4One end, be connected with
Inductance L2, inductance L2With RF output end RFout +It is connected；Include NMOS switch pipe M in the 4th branchn4One end, be connected with electricity
Feel L4, inductance L4With RF output end RFout -It is connected；Control terminal G1Respectively with switching tube Mn1, switching tube Mn3Grid connection,
Control terminal G2Respectively with switching tube Mn2, switching tube Mn4Grid connection.
The circuit structure of tunable impedance matching networks 122 is specifically introduced below according to Fig. 3.
In the present embodiment, with reference to shown in Fig. 3, C1One end and rf inputs RFin +It is connected, while and L1And C2One end
It is connected, C1The other end and switching tube Mn1Drain electrode connection；Switching tube Mn1Grid and control terminal G1It is connected, source electrode and radio frequency
Input terminal RFin -It is connected, while and L3One end, with switching tube Mn2Drain electrode connection；L1The other end simultaneously and C3、C4And L2's
One end is connected；C2The other end and switching tube Mn2Drain electrode connection；Switching tube Mn2Grid and control terminal G2Be connected, source electrode with penetrate
Frequency input terminal RFin -It is connected；L3The other end and L4One end be connected, while with switching tube Mn3And Mn4Source electrode be connected；C3's
The other end and switching tube Mn3Drain electrode connection；Switching tube Mn3Grid and control terminal G1It is connected；C4The other end and Mn4Drain electrode
It is connected；Switching tube Mn4Grid and control signal G2It is connected；L2The other end and RF output end RFout+ be connected；L4The other end
With RF output end RFout -It is connected.
Fig. 4 is the structure according to the second rectifier and third rectifier in high power branch shown in one embodiment of the disclosure
Schematic diagram.
In the present embodiment, the second rectifier 123 and third rectifier 124 in high power branch 120 preferably use identical
Rectifier unit, be cross coupling structure RF-DC rectifiers, using mutually isostructural rectifier unit, its advantage is that only
The series and parallel mode that switch changes between rectifier unit need to be controlled, different rectifier structures can be realized, covered different
Input power range saves chip area by structure multiplexing.
As shown in figure 4, the rectifier unit of cross coupling structure includes：Capacitance C1、C2, NMOS tube Mn1、Mn2, PMOS tube
Mp1、Mp2；Wherein, C1One end and tunable impedance matching networks 122 RF output end RFout +Be connected, the other end respectively with
Mn1Source electrode and Mp1Source electrode be connected；C2One end and tunable impedance matching networks 122 RF output end RFout -It is connected,
The other end respectively with Mn2Source electrode and Mp2Source electrode be connected；Mn1Drain electrode and Mn2Drain electrode be connected, Mn1Grid and Mp1Grid
Extremely it is connected, while is connected to Mn2And Mp2Source electrode, Mn1Source electrode and Mp1Source electrode be connected；Mn2Drain electrode and Mn1Drain electrode phase
Even, Mn2Grid and Mp2Grid be connected, while being connected to Mn1And Mp1Source electrode, Mn2Source electrode and Mp2Source electrode be connected；Mp1
With Mp2Drain electrode be connected, and with output VoutDCIt links together.
It is shown in Figure 1, in the present embodiment, the input terminal of control circuit 130 respectively with CMOS RF energy acquisition systems
Output end vo ut be connected with reference voltage Vref 1, Vref2, Vref3, the control with low-power branch respectively of control word output end
End processed is connected with the control terminal of high power branch.
The control circuit 130 can tune the rectifier inside the CMOS RF energy acquisition systems automatically according to input power
With impedance matching network structure, make it that all there is higher power conversion efficiency in wide input power range.Work as input power
When fainter, for example, input power value is ranging from：- 25dBm~-17dBm, the CMOS RF energy acquisition systems pass through control
Circuit 130 generates control word, opens low-power branch 110, shutdown high power branch 120, wherein in low-power branch 110
First rectifier 111 uses intermediate. threshold metal-oxide-semiconductor, can acquire fainter RF energy, can effectively improve energy acquisition system
The sensitivity of system makes the CMOS RF energies acquisition system have higher efficiency when compared with low input power；With input work
The power conversion efficiency of the increase of rate, the first rectifier 111 of low-power branch 110 can be gradually reduced, therefore, in order to maintain to be
The high efficiency of system needs that system is made to be switched to high power branch 120 at this time, simultaneously turns off low-power branch 110, by controlling electricity
Road 130 generates control word, opens high power branch 120, turns off low-power branch 110, and certainly according to different input powers
The connection type of rectifier and impedance matching network in dynamic adjustment high power branch 120.When input power is in -17dBm~-7dBm
When in range, control circuit 130, which can export control word, makes the second rectifier 123 and third rectifier 124 the two rectifier lists
Member carries out in parallel, and it is maximum to make efficiency of the system in this power bracket, meanwhile, impedance matching network 122 also need be tuned to
Match with rectifier structure in parallel.When input power continues to increase, the efficiency of parallel-connection structure has no longer been optimal, and system is then
Control word is exported by control circuit, rectifier structure is become into the second rectifier 123 and third rectifier 124 the two rectifications
The concatenated form of device unit, makes it in high input power range, such as：- 7dBm~0dBm has maximum power conversion effect
Rate, at the same impedance matching network also need be tuned to match with concatenated rectifier structure, can realize self-adapting tuning, pass through
Restructural mode is realized to RF energy wide dynamic range, efficient energy acquisition.
In conclusion present disclose provides a kind of restructural CMOS RF energy acquisition systems, by the way that low-power is arranged
Branch, high power branch and control circuit control unlatching and the pass of low-power branch and high power branch using control circuit
The connection type of rectifier and impedance matching network, can realize according to different input powers in disconnected and high power branch
Self-adapting tuning is realized by restructural mode to RF energy wide dynamic range, efficient energy acquisition；Low work(simultaneously
Rectifier in rate branch uses intermediate. threshold metal-oxide-semiconductor, can acquire fainter RF energy, can effectively improve energy acquisition
The sensitivity of system.
It should be noted that word "comprising" or " comprising " do not exclude the presence of element not listed in the claims or step
Suddenly.Word "a" or "an" before element does not exclude the presence of multiple such elements.
The word of specification and ordinal number such as " first ", " second ", " third " etc. used in claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used for enabling the element with certain name and another tool
There is the element of identical name that can make clear differentiation.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough required characteristic changings according to as obtained by content of this disclosure.Specifically, all be used in specification and claim
The number of the middle content for indicating composition, reaction condition etc., it is thus understood that repaiied by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to including by specific quantity ± 10% variation in some embodiments, at some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Particular embodiments described above has carried out further in detail the purpose, technical solution and advantageous effect of the disclosure
It describes in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, is not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of restructural CMOS RF energy acquisition systems, including：
Low-power branch, for the RF energy of lower-wattage to be converted into DC energy；
High power branch, for the RF energy of higher-wattage to be converted into DC energy, including：Rectifier structure and tunable
Impedance matching network, the rectifier structure include several rectifier units for carrying out series, parallel connection switching, the high power
Branch can configure different tunable impedance matching networks and rectifier structure according to the RF energy of different input power, will not
RF energy with input power is maximumlly converted into DC energy；And
Control circuit, according to the RF energy of different input power automatically control low-power branch and high power branch switching,
And control the configuration of tunable impedance matching networks and rectifier structure in high power branch.
2. CMOS RF energies acquisition system according to claim 1, wherein：
There is the low-power branch input, output end and control terminal, input terminal to be connected with radio-frequency antenna, export
End is connected with the output end of CMOS RF energy acquisition systems；
There is the high power branch input, output end and control terminal, input terminal to be connected with radio-frequency antenna, export
End is connected with the output end of CMOS RF energy acquisition systems；
The control circuit, have input terminal and control word output end, input terminal respectively with CMOS RF energy acquisition systems
Output end be connected with reference voltage, the control with the control terminal of low-power branch and high power branch respectively of control word output end
End processed is connected.
3. CMOS RF energies acquisition system according to claim 1, wherein the high power branch also includes：
Switch S1, switch S1It is connected with tunable impedance matching networks；And switch S2, it is connected with the output end of rectifier structure；
Wherein, rectifier structure is connected with tunable impedance matching networks, including：Second rectifier, third rectifier and
Switching group, wherein switching group is set between the second rectifier and third rectifier, realizes the second rectifier and third rectifier
Series and parallel conversion, so that the second rectifier, third rectifier is constituted changeable rectifier structure in series or in parallel with each other.
4. CMOS RF energies acquisition system according to claim 3, wherein second rectifier and third rectifier
Structure it is identical.
5. CMOS RF energies acquisition system according to claim 1, wherein the rectifier unit is cross-couplings knot
Structure RF-DC rectifiers.
6. CMOS RF energies acquisition system according to claim 1, wherein the tunable impedance matching networks packet
Contain：
Capacitance C1~C4, inductance L1~L4, NMOS switch pipe Mn1~Mn4, two rf inputs RFin +、RFin -, two radio frequencies are defeated
Outlet RFout +、RFout -With two control terminal G1、G2；
Wherein, capacitance C1With NMOS switch pipe Mn1Connection constitutes the first branch；Capacitance C2With NMOS switch pipe Mn2Connection is constituted
The second branch；The first branch is in parallel with the second branch, capacitance C1、C2Respectively with rf inputs RFin +It is connected, NMOS switch pipe
Mn1、Mn2Respectively with rf inputs RFin -It is connected；
Capacitance C3With NMOS switch pipe Mn3Connection constitutes third branch；Capacitance C4With NMOS switch pipe Mn4Connection constitutes the 4th
Road；Third branch and the 4th branch circuit parallel connection, in capacitance C2、C3Between be provided with inductance L1, in NMOS switch pipe Mn2、Mn3Between set
It is equipped with inductance L3；Include capacitance C in the 4th branch4One end be connected with inductance L2, inductance L2With RF output end RFout +Phase
Even；Include NMOS switch pipe M in the 4th branchn4One end be connected with inductance L4, inductance L4With RF output end RFout -It is connected；
Control terminal G1Respectively with switching tube Mn1, switching tube Mn3Grid connection, control terminal G2Respectively with switching tube Mn2, switching tube Mn4
Grid connection.
7. CMOS RF energies acquisition system according to claim 6, wherein the rectifier unit includes：
Capacitance C1、C2, NMOS tube Mn1、Mn2, PMOS tube Mp1、Mp2；
Wherein, C1One end and tunable impedance matching networks RF output end RFout +Be connected, the other end respectively with Mn1Source
Pole and Mp1Source electrode be connected；C2One end and tunable impedance matching networks RF output end RFout -It is connected, other end difference
With Mn2Source electrode and Mp2Source electrode be connected；Mn1Drain electrode and Mn2Drain electrode be connected, Mn1Grid and Mp1Grid be connected, simultaneously
It is connected to Mn2And Mp2Source electrode, Mn1Source electrode and Mp1Source electrode be connected；Mn2Drain electrode and Mn1Drain electrode be connected, Mn2Grid with
Mp2Grid be connected, while being connected to Mn1And Mp1Source electrode, Mn2Source electrode and Mp2Source electrode be connected；Mp1With Mp2Drain electrode be connected
It connects.
8. CMOS RF energies acquisition system according to claim 1, wherein：
When the input power of RF energy is between -25dBm~-17dBm, which passes through control
Circuit processed generates control word, opens low-power branch, turns off high power branch；
When the input power of RF energy is between -17dBm~0dBm, which passes through control
Circuit generates control word, opens high power branch, turns off low-power branch.
9. CMOS RF energies acquisition system according to claim 8, wherein when RF energy input power between-
When between 17dBm~-7dBm, control circuit generates control word, and control rectifier unit carries out parallel connection, makes the CMOS RF energies
Efficiency of the acquisition system in this power bracket is maximum, meanwhile, impedance matching network also be tuned to rectifier knot in parallel
Structure matches；When the input power of RF energy is between -7dBm~0dBm, control circuit generates control word, and control is whole
Stream device unit is connected, and keeps efficiency of the CMOS RF energies acquisition system in this power bracket maximum, meanwhile, impedance
Matching network also be tuned to match with concatenated rectifier structure.
10. according to claim 1 to 9 any one of them CMOS RF energy acquisition systems, wherein the low-power branch packet
The first rectifier is included, which uses intermediate. threshold metal-oxide-semiconductor.
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