CN108300153A - High energy storage density dielectric substance and preparation method thereof - Google Patents

High energy storage density dielectric substance and preparation method thereof Download PDF

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Publication number
CN108300153A
CN108300153A CN201710951390.4A CN201710951390A CN108300153A CN 108300153 A CN108300153 A CN 108300153A CN 201710951390 A CN201710951390 A CN 201710951390A CN 108300153 A CN108300153 A CN 108300153A
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nano
organic
oxide
energy storage
nanometer
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杨文虎
李峰
卢星华
李雪
周智勇
郭欧平
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Shenzhen Peak Swimming Technology Co Ltd
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Shenzhen Peak Swimming Technology Co Ltd
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Priority to CN201710951390.4A priority Critical patent/CN108300153A/en
Publication of CN108300153A publication Critical patent/CN108300153A/en
Priority to CN201811190936.XA priority patent/CN109486106B/en
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Abstract

High energy storage density dielectric substance and its preparation method and application, it is related to a kind of high energy storage density organic/inorganic composite material of multilayered structure and its preparation method and application.It is low the invention aims to solve the dielectric constant of the polymer composites of existing high energy storage density, the low problem of compressive resistance.A kind of high energy storage density dielectric substance is made of organic/inorganic composite film and organic film superposition, or is made of the superposition of multilayer organic/inorganic composite film.Method：Organo-mineral complexing slurry is first prepared, is then coated on base material, require to be sequentially coated with machine inorganic compounding slurry according to lamination or puts one layer of organic form membrane superposition, then passes through that hot pressing is compound successively and solidification is to get to high energy storage density dielectric substance.Present invention is mainly used for prepare high energy storage density dielectric substance.

Description

High energy storage density dielectric substance and preparation method thereof
Technical field
A kind of high energy storage density composite organic-inorganic material of multilayered structure of the present invention and preparation method thereof.
Background technology
Dielectric capacitor with high charge-discharge speed and high power density is in electric system, impulse power electrical source etc. Play key player.It is in recent years the generation information technology of representative and industry to electricity using Intelligent internet of things and wearable technology The high integration of subsystem, miniaturization, lightweight and densification demand drive traditional ceramics dielectric substance to be thinned rapidly, Leakage current sharply increases.Therefore it finds novel high energy storage density dielectric substance and has become information functional material and microelectronics neck The perspective study project in domain.High energy storage density polymer composite dielectric material is due to simple for process, of low cost, Yi Yurou Property the advantages that matrix is compatible and suitable large area production have become the hot spot of academic and industrial circle concern.
According to the definition (formula 1) of dielectric material energy storage density, the energy density of dielectric material depends primarily on electric-field strength E and electric displacement vector D is spent, for the energy storage density U of general linear dielectric materialeFormula 2, wherein ε can be then reduced to0With εrIt is vacuum and dielectric constant of the dielectric material, E respectivelyBIt is dielectric breakdown strength.
Therefore the energy storage of dielectric material can be improved to the maximum extent by improving the dielectric constant of material and breakdown strength simultaneously Density.
In order to obtain the polymer composites of high energy storage density, method general at present includes：The first, according to effectively Jie Matter is theoretical, fills all kinds of high dielectric ceramic fillers in a polymer matrix and constructs the high dielectric polymer composite material of 0-3 types.But This additive amount by ceramics regulates and controls raising of the method for composite material dielectric constant of the dielectric property of composite material Still limited, while the introducing of mass filler necessarily leads to a large amount of defects, to reduce the compressive resistance of material.
Invention content
It is low the invention aims to solve the dielectric constant of the polymer composites of existing high energy storage density, resistance to pressure Spend low problem, and high energy storage density dielectric substance is provided and preparation method thereof.
A kind of high energy storage density dielectric substance, it is characterised in that high energy storage density dielectric substance is answered by organic and inorganic It closes film and organic film superposition is made, and the outermost layer of high energy storage density dielectric substance is Organic inorganic film, the high storage The thickness of energy density dielectric substance is 8 μm~500 μm.
A kind of a kind of preparation method of high energy storage density dielectric substance, it is characterised in that high energy storage density dielectric substance Preparation method complete according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., organic matrix is added in solvent A, at 30~60 DEG C of temperature Ultrasound 10min~120min is stirred, organic matrix solution is obtained；2., by inorganic filler ultrasonic agitation be scattered in solvent B, obtain To suspension, then suspension ultrasonic agitation is scattered in organic matrix solution, adds auxiliary agent, ultrasonic agitation mixing is equal It is even, mixture is obtained, rotating speed ball milling 10h~22h with 300rpm~700rpm in ball grinder is poured the mixture into, is had Machine-inorganic compounding slurry；The solvent B and solvent A are same substances；
Two, step 1 operation preparation several pieces Organic-inorganic composite slurry is repeated, and several pieces Organic-inorganic composite is starched The material of material is identical or material is different；
Three, two parts are taken out in several pieces Organic-inorganic composite slurry to be respectively coated on two base materials, waits for that solvent is waved completely After hair, two sheets are obtained；
Four, one is taken in the two sheets that step 3 obtains to be used as matrix sheet material, another is as topsheet, in matrix It requires to be sequentially coated with machine-inorganic compounding slurry according to high energy storage density dielectric substance lamination on the coating of sheet material or puts one Layer organic film coats Organic-inorganic composite slurry and first carries out solvent volatilization process, continue to grasp after solvent volatilizees completely every time Make, be finally superimposed topsheet in the form of lower by coating, hot pressing is compound, cures at being then 80~200 DEG C in temperature 60min~180min is to get to high energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 8 μm ~500 μm；
The high energy storage density dielectric substance lamination requires as follows：
When there is Organic inorganic film and Organic-inorganic composite in the lamination of the high energy storage density dielectric substance When the adjacent superposition of film, the material of two layers of Organic inorganic film of adjacent superposition is different；
When in the high energy storage density dielectric substance including multilayer organic film, at least alternating floor between two layers of organic film Organic inorganic film.
Above-mentioned material advantage：One, in above-mentioned material structure, due to the presence of organic film, composite material is substantially increased Resistance to breakdown strength, therefore energy storage density greatly improves.Two, above-mentioned material is in taking full advantage of interface both sides opposed polarity or electricity The component of conductance is under the action of external electric field, polarization effect caused by electronics or ion in dielectric are easy aggregation in interface It answers, and then improves the principle of the dielectric constant of material, while organic film is introduced in composite inner, such as high-insulativity PI can then improve the breakdown voltage resistant of composite material and improve the dielectric loss of composite material, therefore root to a certain extent According to the product effect of material, which can improve the energy storage density of material simultaneously.Three, the dielectric of above-mentioned material Constant ＞ 85, energy storage density reaches 22J/cm3, compressive resistance is 200MV/m~600MV/m.
A kind of high energy storage density dielectric substance, it is characterised in that high energy storage density dielectric substance by multilayer it is organic-nothing The superposition of machine composite membrane is made, and the thickness of the high energy storage density dielectric substance is 8 μm~500 μm；The high energy storage density electricity The material at least two of multilayer Organic inorganic film in dielectric material, and two layers of Organic inorganic film of adjacent superposition Material it is different.
A kind of a kind of preparation method of high energy storage density dielectric substance, it is characterised in that high energy storage density dielectric substance Preparation method complete according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., organic matrix is added in solvent A, at 30~60 DEG C of temperature Ultrasound 10min~120min is stirred, organic matrix solution is obtained；2., by inorganic filler ultrasonic agitation be scattered in solvent B, obtain To suspension, then suspension ultrasonic agitation is scattered in organic matrix solution, adds auxiliary agent, ultrasonic agitation mixing is equal It is even, mixture is obtained, rotating speed ball milling 10h~22h with 300rpm~700rpm in ball grinder is poured the mixture into, is had Machine-inorganic compounding slurry；The solvent B and solvent A are same substances；
Two, step 1 operation preparation several pieces Organic-inorganic composite slurry is repeated, and several pieces Organic-inorganic composite is starched The material at least two of material；
Three, two parts are taken out in several pieces Organic-inorganic composite slurry to be respectively coated on two base materials, waits for that solvent is waved completely After hair, two sheets are obtained；
Four, one is taken in the two sheets that step 3 obtains to be used as matrix sheet material, another is as topsheet, in matrix It is sequentially coated with machine-inorganic compounding slurry according to the requirement of high energy storage density dielectric substance lamination on the coating of sheet material, is applied every time It covers Organic-inorganic composite slurry and first carries out solvent volatilization process, continue to operate after solvent volatilizees completely, finally by topsheet Be superimposed in the form of lower by coating, hot pressing is compound, then temperature be 80~200 DEG C at solidification 60min~180min to get to High energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 8 μm~500 μm.
Above-mentioned material advantage：The dielectric constant of above-mentioned material reaches 100, and energy storage density reaches 36.5J/cm3, compressive resistance For 200MV/m~600MV/m.
High energy storage density dielectric substance prepared by the present invention as dielectric material for embedded capacitor, microphone or In Pulsed power device.
Specific implementation mode
Specific implementation mode one：Present embodiment is a kind of high energy storage density dielectric substance, it is by Organic-inorganic composite Film and organic film superposition are made, and the outermost layer of high energy storage density dielectric substance is Organic inorganic film, the high energy storage The thickness of density dielectric substance is 8 μm~500 μm.
Specific implementation mode two：The difference of present embodiment and specific implementation mode one is：The Organic-inorganic composite The thickness of film is 3 μm~30 μm；The thickness of the organic film is 2 μm~20 μm.Other are same as the specific embodiment one.
Specific implementation mode three：Present embodiment and the difference of one of specific implementation mode one or two are：The high storage The material for the multilayer Organic inorganic film for including in energy density dielectric substance is identical or material is different.Other with it is specific Embodiment one or two is identical.
Specific implementation mode four：The difference of present embodiment and one of specific implementation mode one to three is：When the height It is adjacent when occurring adjacent with the Organic inorganic film superposition of Organic inorganic film in the lamination of energy storage density dielectric substance The material of two layers of Organic inorganic film of superposition is different.Other are identical as specific implementation mode one to three.
Specific implementation mode five：The difference of present embodiment and one of specific implementation mode one to four is：When the height When in energy storage density dielectric substance including multilayer organic film, at least alternating floor Organic inorganic film between two layers of organic film. Other are identical as specific implementation mode one to four.
Specific implementation mode six：The difference of present embodiment and one of specific implementation mode one to five is：When the height When in energy storage density dielectric substance including multilayer organic film, the material of the multilayer organic film is identical or material is different.Other It is identical as specific implementation mode one to five.
Specific implementation mode seven：The difference of present embodiment and one of specific implementation mode one to six is：It is described it is organic- Inorganic substances compound membrane is made of organic matrix, inorganic filler and auxiliary agent.Other are identical as specific implementation mode one to six.
Specific implementation mode eight：The difference of present embodiment and specific implementation mode seven is：The organic matrix is Epoxy resin, liquid crystal epoxy resin, polybutadiene, polystyrene, polytetrafluoroethylene (PTFE), Kynoar, bismaleimide Polyimide resin, bismaleimide-triazine resin, acrylic resin, polyimides, phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene Type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon.Other are identical as specific implementation mode seven.
Specific implementation mode nine：The difference of present embodiment and specific implementation mode seven is：The inorganic filler is One-dimensional filler, two-dimentional filler or granular powder filler.Other are identical as specific implementation mode seven.
Specific implementation mode ten：The difference of present embodiment and specific implementation mode nine is：The one-dimensional filler is Barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3Nanofiber, rare earth doped BaTiO3Nanometer Line, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, barium strontium titanate Nanowire Dimension, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, barium calcium titanate Nanowire Dimension, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nano-tube, nitridation Boron nanowire, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, titanium dioxide are received Rice noodles, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide nanowires, oxygen Change stannum nanowire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal nanometer line. Other are identical as specific implementation mode nine.
Specific implementation mode 11：The difference of present embodiment and specific implementation mode ten is：The metal nano Metal is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin in line.Other are identical as specific implementation mode ten.
Specific implementation mode 12：The difference of present embodiment and specific implementation mode ten is：The rare earth element Adulterate BaTiO3Nanofiber rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other and specific embodiment party Formula ten is identical
Specific implementation mode 13：The difference of present embodiment and specific implementation mode ten is：The rare earth element Adulterate BaTiO3Nano wire rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other and specific implementation mode Ten is identical
Specific implementation mode 14：The difference of present embodiment and specific implementation mode nine is：The two-dimentional filler For boron nitride nanosheet, graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, titanium disulfide Nanometer sheet, tungsten disulfide nano slices, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C nano piece, WC nanometer sheets, WS2Nanometer sheet, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene.Other are identical as specific implementation mode nine.
Specific implementation mode 15：The difference of present embodiment and specific implementation mode nine is：The granular powder Filler is barium titanate nano particle, rare earth doped BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanates nanometer Grain, barium strontium titanate nano particle, calcium titanate nanoparticles, barium calcium titanate nano particle, potassium-sodium niobate nano particle, zinc oxide nano Rice grain, aluminum oxide nanoparticle, boron nitride nano-tube, silicon nitride nano particles, nano SiO 2 particle, aluminum nitride nanometer Particle, titania nanoparticles, nanometer silicon carbide particle, cuprous oxide nano particle, copper oxide nanometer particle, manganese dioxide Nano particle, nickel oxide nanoparticle, tin oxide nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, iron oxide are received Rice grain, ferrous oxide nano particle or metal nanoparticle.Other are identical as specific implementation mode nine.
Specific implementation mode 16：The difference of present embodiment and specific implementation mode nine to one of 15 is：It is described One-dimensional filler a diameter of 20nm~1000nm, length be 100nm~100 μm.Other and specific implementation mode nine to 15 It is identical.
Specific implementation mode 17：The difference of present embodiment and specific implementation mode nine to one of 15 is：It is described Two-dimentional filler length be 50nm~10 μm, width be 50nm~10 μm, thickness be 10nm~5 μm.Other and specific implementation Mode nine to 15 is identical.
Specific implementation mode 18：The difference of present embodiment and specific implementation mode nine to one of 15 is：It is described The shape of granular powder filler be spherical or spherical, average grain diameter is 10nm~3 μm.Other and specific implementation mode nine It is identical to 15.
Specific implementation mode 19：The difference of present embodiment and specific implementation mode seven is：The auxiliary agent is dispersion At least one of agent, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent.Other are identical as specific implementation mode seven.
Dispersant described in present embodiment is nonionic emulsifier, cationic emulsifier or anionic emulsifier.
Coupling agent described in present embodiment is silane coupling agent, silane coupling agent be domestic KH550, KH560, KH570 or KH551 or Dow Corning CorporationOFS-6020、OFS-6030 orOFS-6040 or the U.S. step figureA-186Silane、A-171Silane、A-1120Silane orA-1100Silane, or Japan SHIN-ETSU HANTOTAI KBM303, KBM503, KBM603, KBM403, KBE1003 or KBE903.
Coupling agent described in present embodiment is titanate coupling agent, and titanate coupling agent is that the titanate esters of flag space chemistry are even Join agent -101, titanate coupling agent -102, titanate coupling agent -105, titanate coupling agent -130 or titanate coupling agent - 133 either the TytanAP100 of Du Pont or the U.S. agree Leech KENRICH R-TTS, KR-38S, KR-12, KR-9S or The TC-70 of TTOP-38S or day occasion chemical industry.
Coupling agent described in present embodiment is aluminate coupling agent, and aluminate coupling agent is Hangzhou Jesse's card chemical industry HY-133, HY-1804, HY-1805, HY-1108, HY-999 or HY-988.
Coupling agent described in present embodiment is phosphate coupling agent, and phosphate coupling agent is DN-27, DN-37 of the country Or DN-307.
Levelling agent described in present embodiment is silicone levelling agent, and silicone levelling agent isWE-D9000、 Ou Chen KLE-41, BYK-300, BYK-306, BYK-307 or BYK-310.
Levelling agent described in present embodiment is fluorocarbons class levelling agent, and carbon compound species levelling agent is EFKA- 3600 or EFKA-E3500.
Specific implementation mode 20：The difference of present embodiment and specific implementation mode seven is：The organic and inorganic is multiple It is 0.5%~80% to close inorganic filler mass fraction in film, and the mass fraction of auxiliary agent is 0.5%~15%, the matter of organic matrix It is 5%~99% to measure score.Other are identical as specific implementation mode seven.
Specific implementation mode 21：The difference of present embodiment and specific implementation mode one to one of 20 is：Institute The organic film stated is selected from polyimide film, epoxy resin film, polytetrafluoroethylene film, polyvinylidene fluoride film, bismaleimide tree Adipose membrane, bismaleimide-triazine resin film and acrylic resin film.Other are identical as specific implementation mode one to 20.
Specific implementation mode 22：Present embodiment is a kind of preparation method of high energy storage density dielectric substance, it It completes according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., organic matrix is added in solvent A, at 30~60 DEG C of temperature Ultrasound 10min~120min is stirred, organic matrix solution is obtained；2., by inorganic filler ultrasonic agitation be scattered in solvent B, obtain To suspension, then suspension ultrasonic agitation is scattered in organic matrix solution, adds auxiliary agent, ultrasonic agitation mixing is equal It is even, mixture is obtained, rotating speed ball milling 10h~22h with 300rpm~700rpm in ball grinder is poured the mixture into, is had Machine-inorganic compounding slurry；The solvent B and solvent A are same substances；
Two, step 1 operation preparation several pieces Organic-inorganic composite slurry is repeated, and several pieces Organic-inorganic composite is starched The material of material is identical or material is different；
Three, two parts are taken out in several pieces Organic-inorganic composite slurry to be respectively coated on two base materials, waits for that solvent is waved completely After hair, two sheets are obtained；
Four, one is taken in the two sheets that step 3 obtains to be used as matrix sheet material, another is as topsheet, in matrix It requires to be sequentially coated with machine-inorganic compounding slurry according to high energy storage density dielectric substance lamination on the coating of sheet material or puts one Layer organic film coats Organic-inorganic composite slurry and first carries out solvent volatilization process, continue to grasp after solvent volatilizees completely every time Make, be finally superimposed topsheet in the form of lower by coating, hot pressing is compound, cures at being then 80~200 DEG C in temperature 60min~180min is to get to high energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 8 μm ~500 μm；
The high energy storage density dielectric substance lamination requires as follows：
When there is Organic inorganic film and Organic-inorganic composite in the lamination of the high energy storage density dielectric substance When the adjacent superposition of film, the material of two layers of Organic inorganic film of adjacent superposition is different；
When in the high energy storage density dielectric substance including multilayer organic film, at least alternating floor between two layers of organic film Organic inorganic film.
Specific implementation mode 23：The difference of present embodiment and specific implementation mode 22 is：Step 1 is 1. Described in the mass ratio of organic matrix and solvent A be 1:(1~30).Other are identical as specific implementation mode one to 22.
Specific implementation mode 24：The difference of one of present embodiment and specific implementation mode 22 or 23 It is：Step 1 2. described in suspension the mass ratio of inorganic filler and solvent B be 1:(1~10).Other and specific embodiment party Formula 22 or 23 is identical.
Specific implementation mode 25：The difference of present embodiment and specific implementation mode 22 to one of 24 It is：Inorganic filler mass fraction is 0.5% in Organic inorganic film in the high energy storage density dielectric substance that step 4 obtains ~80%, the mass fraction of auxiliary agent is 0.5%~15%, and the mass fraction of organic matrix is 5%~99%.Other and specific reality It is identical to apply mode 22 to 24.
Specific implementation mode 26：The difference of present embodiment and specific implementation mode 22 to one of 25 It is：The thickness for the high energy storage density dielectric substance that step 4 obtains is 8 μm~500 μm.Other and specific implementation mode 20 Two to 25 is identical.
Specific implementation mode 27：The difference of present embodiment and specific implementation mode 22 to one of 26 It is：The thickness of Organic inorganic film is 3 μm~30 μm in the high energy storage density dielectric substance that step 4 obtains, organic film Thickness be 2 μm~20 μm.Other are identical as specific implementation mode 22 to 26.
Specific implementation mode 28：The difference of present embodiment and specific implementation mode 22 to one of 27 It is：Base material described in step 3 is non-conductive substrate or conductive base.Other and 22 to 27 phase of specific implementation mode Together.
Specific implementation mode 29：The difference of present embodiment and specific implementation mode 28 is：It is described non-to lead Electric base material is polyethylene terephthalate or polyimides.Other are identical as specific implementation mode 28.
Specific implementation mode 30：The difference of present embodiment and specific implementation mode 28 is：The conductive base Material is aluminium foil, copper foil, goldleaf, silver foil, nickel foil or tinfoil paper.Other are identical as specific implementation mode 28.
Specific implementation mode 31：The difference of present embodiment and specific implementation mode 22 to one of 30 It is：Step 1 1. described in solvent A be butanone, acetone, N,N-dimethylformamide or DMAC N,N' dimethyl acetamide.Other and tool Body embodiment 22 to 30 is identical.
Specific implementation mode 32：The difference of present embodiment and specific implementation mode 22 to one of 31 It is：Step 1 2. described in auxiliary agent be dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent at least one Kind.Other are identical as specific implementation mode 22 to 31.
Specific implementation mode 33：The difference of present embodiment and specific implementation mode 32 is：The dispersion Agent is nonionic emulsifier, cationic emulsifier or anionic emulsifier.Other are identical as specific implementation mode 32.
Specific implementation mode 34：The difference of present embodiment and specific implementation mode 33 is：The idol Connection agent is silane coupling agent, titanate coupling agent, aluminate coupling agent or phosphate coupling agent.Other and specific implementation mode three 13 is identical.
Coupling agent described in present embodiment is silane coupling agent, silane coupling agent be domestic KH550, KH560, KH570 or KH551 or Dow Corning CorporationOFS-6020、OFS-6030 orOFS-6040 or the U.S. step figureA-186Silane、A-171Silane、A-1120Silane orA-1100Silane, or Japan SHIN-ETSU HANTOTAI KBM303, KBM503, KBM603, KBM403, KBE1003 or KBE903.
Coupling agent described in present embodiment is titanate coupling agent, and titanate coupling agent is that the titanate esters of flag space chemistry are even Join agent -101, titanate coupling agent -102, titanate coupling agent -105, titanate coupling agent -130 or titanate coupling agent - 133 either the TytanAP100 of Du Pont or the U.S. agree Leech KENRICH R-TTS, KR-38S, KR-12, KR-9S or The TC-70 of TTOP-38S or day occasion chemical industry.
Coupling agent described in present embodiment is aluminate coupling agent, and aluminate coupling agent is Hangzhou Jesse's card chemical industry HY-133, HY-1804, HY-1805, HY-1108, HY-999 or HY-988.
Coupling agent described in present embodiment is phosphate coupling agent, and phosphate coupling agent is DN-27, DN-37 of the country Or DN-307.
Specific implementation mode 35：The difference of present embodiment and specific implementation mode 34 is：The stream Flat agent is silicone levelling agent or fluorocarbons class levelling agent.Other are identical as specific implementation mode 34.
Levelling agent described in present embodiment is silicone levelling agent, and silicone levelling agent isWE-D9000、 Ou Chen KLE-41, BYK-300, BYK-306, BYK-307 or BYK-310.
Levelling agent described in present embodiment is fluorocarbons class levelling agent, and carbon compound species levelling agent is EFKA- 3600 or EFKA-E3500.
Specific implementation mode 36：The difference of present embodiment and specific implementation mode 22 to one of 35 It is：Step 1 1. described in organic matrix be epoxy resin, liquid crystal epoxy resin, polybutadiene, polystyrene, poly- four Vinyl fluoride, Kynoar, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyimides, Phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon.Other with it is specific Embodiment 22 to 35 is identical.
Specific implementation mode 37：The difference of present embodiment and specific implementation mode 22 to one of 36 It is：Step 1 2. described in inorganic filler be one-dimensional filler, two-dimentional filler or granular powder filler.Other and specific embodiment party Formula 22 to 36 is identical.
Specific implementation mode 38：The difference of present embodiment and specific implementation mode 37 is：Described one Dimension filler is barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3It is nanofiber, rare earth doped BaTiO3Nano wire, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, metatitanic acid Strontium barium nanofiber, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, calcium titanate Barium nanofiber, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nanometer Pipe, boron nitride nanometer line, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, two Titanium oxide nano wire, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide are received Rice noodles, tin oxide nano-wire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal Nano wire.Other are identical as specific implementation mode 37.
Specific implementation mode 39：The difference of present embodiment and specific implementation mode 38 is：The gold It is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin to belong to metal in nano wire.Other are identical as specific implementation mode 38.
Specific implementation mode 40：The difference of present embodiment and specific implementation mode 38 is：The rare earth Element doping BaTiO3Nanofiber rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other and specific reality It is identical to apply mode 38.
Specific implementation mode 41：The difference of present embodiment and specific implementation mode 38 is：Described is dilute Earth elements adulterate BaTiO3Nano wire rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other and specific reality It is identical to apply mode 38.
Specific implementation mode 42：The difference of present embodiment and specific implementation mode 37 is：Described two Dimension filler is boron nitride nanosheet, graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, two Titanium sulfide nanometer sheet, tungsten disulfide nano slices, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C Nanometer sheet, WC nanometer sheets, WS2Nanometer sheet, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene.Other and specific implementation mode 37 is identical.
Specific implementation mode 43：The difference of present embodiment and specific implementation mode 37 is： Grain powder stuffing is barium titanate nano particle, rare earth doped BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanates Nano particle, barium strontium titanate nano particle, calcium titanate nanoparticles, barium calcium titanate nano particle, potassium-sodium niobate nano particle, oxygen Change zinc nanoparticles, aluminum oxide nanoparticle, boron nitride nano-tube, silicon nitride nano particles, nano SiO 2 particle, nitridation Aluminum nanoparticles, titania nanoparticles, nanometer silicon carbide particle, cuprous oxide nano particle, copper oxide nanometer particle, two Manganese oxide nano granule, nickel oxide nanoparticle, tin oxide nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, oxygen Change iron nano-particle, ferrous oxide nano particle or metal nanoparticle.Other are identical as specific implementation mode 37.
Specific implementation mode 44：The difference of present embodiment and specific implementation mode 22 to one of 43 It is：A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm.Other and specific implementation mode two 12 to 43 is identical.
Specific implementation mode 45：The difference of present embodiment and specific implementation mode 22 to one of 43 It is：The length of the two-dimentional filler is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm.Other and tool Body embodiment 22 to 43 is identical.
Specific implementation mode 46：The difference of present embodiment and specific implementation mode 22 to one of 43 It is：The shape of the granular powder filler is spherical or spherical, and average grain diameter is 10nm~3 μm.Other and specific reality It is identical to apply mode 22 to 43.
Specific implementation mode 47：The difference of present embodiment and specific implementation mode 22 to one of 46 It is：Organic film described in step 4 is selected from polyimide film, epoxy resin film, polytetrafluoroethylene film, polyvinylidene fluoride film, double Maleimide resin film, bismaleimide-triazine resin film and acrylic resin film.Other and specific implementation mode 20 Two to 46 is identical.
Specific implementation mode 48：Present embodiment is a kind of high energy storage density dielectric substance, it by multilayer it is organic- Inorganic substances compound membrane superposition is made, and the thickness of the high energy storage density dielectric substance is 8 μm~500 μm；The high energy storage density The material at least two of multilayer Organic inorganic film in dielectric substance, and two layers of Organic-inorganic composite of adjacent superposition The material of film is different.
Specific implementation mode 49：The difference of present embodiment and specific implementation mode 48 is：It is described it is organic- The thickness of inorganic substances compound membrane is 3 μm~30 μm.Other are identical as specific implementation mode 48.
Specific implementation mode 50：The difference of one of present embodiment and specific implementation mode 48 or 49 It is：The Organic inorganic film is made of organic matrix, inorganic filler and auxiliary agent.Other and specific implementation mode 48 Or 49 is identical.
Specific implementation mode 51：The difference of present embodiment and specific implementation mode 48 to one of 50 It is：The organic matrix is epoxy resin, liquid crystal epoxy resin, polybutadiene, polystyrene, polytetrafluoroethylene (PTFE), gathers Vinylidene, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyimides, phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon.Other and specific implementation mode 48 to 50 is identical.
Specific implementation mode 52：The difference of present embodiment and specific implementation mode 48 to one of 51 It is：The inorganic filler is one-dimensional filler, two-dimentional filler or granular powder filler.Other with specific implementation mode 48 to 51 is identical.
Specific implementation mode 53：The difference of present embodiment and specific implementation mode 52 is：Described one Dimension filler is barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3It is nanofiber, rare earth doped BaTiO3Nano wire, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, metatitanic acid Strontium barium nanofiber, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, calcium titanate Barium nanofiber, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nanometer Pipe, boron nitride nanometer line, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, two Titanium oxide nano wire, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide are received Rice noodles, tin oxide nano-wire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal Nano wire.Other are identical as specific implementation mode 52.
Specific implementation mode 54：The difference of present embodiment and specific implementation mode 53 is：The gold It is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin to belong to metal in nano wire.Other are identical as specific implementation mode 53
Specific implementation mode 55：The difference of present embodiment and specific implementation mode 53 is：Described is dilute Earth elements adulterate BaTiO3Nanofiber rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other with it is specific Embodiment 53 is identical
Specific implementation mode 56：The difference of present embodiment and specific implementation mode 53 is：Described is dilute Earth elements adulterate BaTiO3Nano wire rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other and specific reality It is identical to apply mode 53
Specific implementation mode 57：The difference of present embodiment and specific implementation mode 52 is：Described two Dimension filler is boron nitride nanosheet, graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, two Titanium sulfide nanometer sheet, tungsten disulfide nano slices, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C Nanometer sheet, WC nanometer sheets, WS2Nanometer sheet, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene.Other and specific implementation mode 52 is identical.
Specific implementation mode 58：The difference of present embodiment and specific implementation mode 52 is： Grain powder stuffing is barium titanate nano particle, rare earth doped BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanates Nano particle, barium strontium titanate nano particle, calcium titanate nanoparticles, barium calcium titanate nano particle, potassium-sodium niobate nano particle, oxygen Change zinc nanoparticles, aluminum oxide nanoparticle, boron nitride nano-tube, silicon nitride nano particles, nano SiO 2 particle, nitridation Aluminum nanoparticles, titania nanoparticles, nanometer silicon carbide particle, cuprous oxide nano particle, copper oxide nanometer particle, two Manganese oxide nano granule, nickel oxide nanoparticle, tin oxide nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, oxygen Change iron nano-particle, ferrous oxide nano particle or metal nanoparticle.Other are identical as specific implementation mode 52.
Specific implementation mode 59：The difference of present embodiment and specific implementation mode 52 to one of 58 It is：A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm.Other and specific implementation mode five 12 to 58 is identical.
Specific implementation mode 60：The difference of present embodiment and specific implementation mode 52 to one of 59 It is：The length of the two-dimentional filler is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm.Other and tool Body embodiment 52 to 59 is identical.
Specific implementation mode 61：The difference of present embodiment and specific implementation mode 52 to one of 60 It is：The shape of the granular powder filler is spherical or spherical, and average grain diameter is 10nm~3 μm.Other and specific reality It is identical to apply mode 52 to 60.
Specific implementation mode 62：The difference of present embodiment and specific implementation mode 52 to one of 61 It is：The auxiliary agent is at least one of dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent.Other and tool Body embodiment 52 to 61 is identical.
Dispersant described in present embodiment is nonionic emulsifier, cationic emulsifier or anionic emulsifier.
Coupling agent described in present embodiment is silane coupling agent, silane coupling agent be domestic KH550, KH560, KH570 or KH551 or Dow Corning CorporationOFS-6020、OFS-6030 orOFS-6040 or the U.S. step figureA-186Silane、A-171Silane、A-1120Silane orA-1100Silane, or Japan SHIN-ETSU HANTOTAI KBM303, KBM503, KBM603, KBM403, KBE1003 or KBE903.
Coupling agent described in present embodiment is titanate coupling agent, and titanate coupling agent is that the titanate esters of flag space chemistry are even Join agent -101, titanate coupling agent -102, titanate coupling agent -105, titanate coupling agent -130 or titanate coupling agent - 133 either the TytanAP100 of Du Pont or the U.S. agree Leech KENRICH R-TTS, KR-38S, KR-12, KR-9S or The TC-70 of TTOP-38S or day occasion chemical industry.
Coupling agent described in present embodiment is aluminate coupling agent, and aluminate coupling agent is Hangzhou Jesse's card chemical industry HY-133, HY-1804, HY-1805, HY-1108, HY-999 or HY-988.
Coupling agent described in present embodiment is phosphate coupling agent, and phosphate coupling agent is DN-27, DN-37 of the country Or DN-307.
Levelling agent described in present embodiment is silicone levelling agent, and silicone levelling agent isWE-D9000、 Ou Chen KLE-41, BYK-300, BYK-306, BYK-307 or BYK-310.
Levelling agent described in present embodiment is fluorocarbons class levelling agent, and carbon compound species levelling agent is EFKA- 3600 or EFKA-E3500.
Specific implementation mode 63：The difference of present embodiment and specific implementation mode 52 to one of 62 It is：Inorganic filler mass fraction is 0.5%~80% in the Organic inorganic film, the mass fraction of auxiliary agent is 0.5%~ 15%, the mass fraction of organic matrix is 5%~99%.Other are identical as specific implementation mode 52 to 62.
Specific implementation mode 64：Present embodiment is a kind of preparation method of high energy storage density dielectric substance, it It completes according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., organic matrix is added in solvent A, at 30~60 DEG C of temperature Ultrasound 10min~120min is stirred, organic matrix solution is obtained；2., by inorganic filler ultrasonic agitation be scattered in solvent B, obtain To suspension, then suspension ultrasonic agitation is scattered in organic matrix solution, adds auxiliary agent, ultrasonic agitation mixing is equal It is even, mixture is obtained, rotating speed ball milling 10h~22h with 300rpm~700rpm in ball grinder is poured the mixture into, is had Machine-inorganic compounding slurry；The solvent B and solvent A are same substances；
Two, step 1 operation preparation several pieces Organic-inorganic composite slurry is repeated, and several pieces Organic-inorganic composite is starched The material at least two of material；
Three, two parts are taken out in several pieces Organic-inorganic composite slurry to be respectively coated on two base materials, waits for that solvent is waved completely After hair, two sheets are obtained；
Four, one is taken in the two sheets that step 3 obtains to be used as matrix sheet material, another is as topsheet, in matrix It is sequentially coated with machine-inorganic compounding slurry according to the requirement of high energy storage density dielectric substance lamination on the coating of sheet material, is applied every time It covers Organic-inorganic composite slurry and first carries out solvent volatilization process, continue to operate after solvent volatilizees completely, finally by topsheet Be superimposed in the form of lower by coating, hot pressing is compound, then temperature be 80~200 DEG C at solidification 60min~180min to get to High energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 8 μm~500 μm.
Specific implementation mode 65：The difference of present embodiment and specific implementation mode 64 is：Step 1 is 1. Described in the mass ratio of organic matrix and solvent A be 1:(1~30)；Step 1 2. described in inorganic filler and solvent in suspension The mass ratio of B is 1:(1~10).Other are identical as specific implementation mode 64.
Specific implementation mode 66：The difference of one of present embodiment and specific implementation mode 64 or 65 It is：Inorganic filler mass fraction is 0.5% in Organic inorganic film in the high energy storage density dielectric substance that step 4 obtains ~80%, the mass fraction of auxiliary agent is 0.5%~15%, and the mass fraction of organic matrix is 5%~99%.Other and specific reality It is identical to apply mode 64 or 65.
Specific implementation mode 67：The difference of present embodiment and specific implementation mode 64 to one of 66 It is：The thickness of Organic inorganic film is 3 μm~30 μm in the high energy storage density dielectric substance that step 4 obtains, organic film Thickness be 2 μm~20 μm.Other are identical as specific implementation mode 64 to 66.
Specific implementation mode 68：The difference of present embodiment and specific implementation mode 64 to one of 67 It is：Base material described in step 3 is non-conductive substrate or conductive base, and the non-conductive substrate is polyethylene terephthalate Ester or polyimides；The conductive base is aluminium foil, copper foil, goldleaf, silver foil, nickel foil or tinfoil paper.Other and specific implementation mode 64 to 67 is identical.
Specific implementation mode 69：The difference of present embodiment and specific implementation mode 64 to one of 68 It is：Step 1 1. described in solvent A be butanone, acetone, N,N-dimethylformamide or DMAC N,N' dimethyl acetamide.Other and tool Body embodiment 64 to 68 is identical.
Specific implementation mode 70：The difference of present embodiment and specific implementation mode 64 to one of 69 It is：Step 1 2. described in auxiliary agent be dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent at least one Kind.Other are identical as specific implementation mode 64 to 69.
Specific implementation mode 71：The difference of present embodiment and specific implementation mode 70 is：The dispersant For nonionic emulsifier, cationic emulsifier or anionic emulsifier.Other are identical as specific implementation mode 70.
Specific implementation mode 72：The difference of present embodiment and specific implementation mode 70 is：The coupling Agent is silane coupling agent, titanate coupling agent, aluminate coupling agent or phosphate coupling agent.Other and specific implementation mode 70 It is identical.
Coupling agent described in present embodiment is silane coupling agent, silane coupling agent be domestic KH550, KH560, KH570 or KH551 or Dow Corning CorporationOFS-6020、OFS-6030 orOFS-6040 or the U.S. step figureA-186Silane、A-171Silane、A-1120Silane orA-1100Silane, or Japan SHIN-ETSU HANTOTAI KBM303, KBM503, KBM603, KBM403, KBE1003 or KBE903.
Coupling agent described in present embodiment is titanate coupling agent, and titanate coupling agent is that the titanate esters of flag space chemistry are even Join agent -101, titanate coupling agent -102, titanate coupling agent -105, titanate coupling agent -130 or titanate coupling agent - 133 either the TytanAP100 of Du Pont or the U.S. agree Leech KENRICH R-TTS, KR-38S, KR-12, KR-9S or The TC-70 of TTOP-38S or day occasion chemical industry.
Coupling agent described in present embodiment is aluminate coupling agent, and aluminate coupling agent is Hangzhou Jesse's card chemical industry HY-133, HY-1804, HY-1805, HY-1108, HY-999 or HY-988.
Coupling agent described in present embodiment is phosphate coupling agent, and phosphate coupling agent is DN-27, DN-37 of the country Or DN-307.
Specific implementation mode 73：The difference of present embodiment and specific implementation mode 70 is：The levelling Agent is silicone levelling agent or fluorocarbons class levelling agent.Other are identical as specific implementation mode 70.
Levelling agent described in present embodiment is silicone levelling agent, and silicone levelling agent isWE-D9000、 Ou Chen KLE-41, BYK-300, BYK-306, BYK-307 or BYK-310.
Levelling agent described in present embodiment is fluorocarbons class levelling agent, and carbon compound species levelling agent is EFKA- 3600 or EFKA-E3500.
Specific implementation mode 74：The difference of present embodiment and specific implementation mode 64 to one of 73 It is：Step 1 1. described in organic matrix be epoxy resin, liquid crystal epoxy resin, polybutadiene, polystyrene, poly- four Vinyl fluoride, Kynoar, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyimides, Phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon.Other with it is specific Embodiment 64 to 73 is identical.
Specific implementation mode 75：The difference of present embodiment and specific implementation mode 64 to one of 74 It is：Step 1 2. described in inorganic filler be one-dimensional filler, two-dimentional filler or granular powder filler.Other and specific embodiment party Formula 64 to 74 is identical.
Specific implementation mode 76：The difference of present embodiment and specific implementation mode 75 is：Described one Dimension filler is barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3It is nanofiber, rare earth doped BaTiO3Nano wire, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, metatitanic acid Strontium barium nanofiber, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, calcium titanate Barium nanofiber, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nanometer Pipe, boron nitride nanometer line, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, two Titanium oxide nano wire, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide are received Rice noodles, tin oxide nano-wire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal Nano wire.Other are identical as specific implementation mode 75.
Specific implementation mode 77：The difference of present embodiment and specific implementation mode 76 is：The gold It is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin to belong to metal in nano wire.Other are identical as specific implementation mode 76.
Specific implementation mode 78：The difference of present embodiment and specific implementation mode 76 is：Described is dilute Earth elements adulterate BaTiO3Nanofiber rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other with it is specific Embodiment 76 is identical.
Specific implementation mode 79：The difference of present embodiment and specific implementation mode 76 is：Described is dilute Earth elements adulterate BaTiO3Nano wire rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu.Other and specific reality It is identical to apply mode 76.
Specific implementation mode 80：The difference of present embodiment and specific implementation mode 75 is：The two dimension Filler is boron nitride nanosheet, graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, two sulphur Change titanium nanometer sheet, tungsten disulfide nano slices, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C receives Rice piece, WC nanometer sheets, WS2Nanometer sheet, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene.Other and specific implementation mode seven 15 is identical.
Specific implementation mode 81：The difference of present embodiment and specific implementation mode 75 is： Grain powder stuffing is barium titanate nano particle, rare earth doped BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanates Nano particle, barium strontium titanate nano particle, calcium titanate nanoparticles, barium calcium titanate nano particle, potassium-sodium niobate nano particle, oxygen Change zinc nanoparticles, aluminum oxide nanoparticle, boron nitride nano-tube, silicon nitride nano particles, nano SiO 2 particle, nitridation Aluminum nanoparticles, titania nanoparticles, nanometer silicon carbide particle, cuprous oxide nano particle, copper oxide nanometer particle, two Manganese oxide nano granule, nickel oxide nanoparticle, tin oxide nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, oxygen Change iron nano-particle, ferrous oxide nano particle or metal nanoparticle.Other are identical as specific implementation mode 75.
Specific implementation mode 82：The difference of present embodiment and specific implementation mode 75 to 81 is： A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm.Other and specific implementation mode 70 Five to 81 is identical.
Specific implementation mode 83：The difference of present embodiment and specific implementation mode 75 to 81 is： The length of the two-dimentional filler is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm.Other with it is specific Embodiment 75 to 81 is identical.
Specific implementation mode 84：The difference of present embodiment and specific implementation mode 75 to 81 is： The shape of the granular powder filler is spherical or spherical, and average grain diameter is 10nm~3 μm.Other and specific embodiment party Formula 75 to 81 is identical.
Specific implementation mode 85：Present embodiment is a kind of application of high energy storage density dielectric substance, feature It is high energy storage density dielectric substance as dielectric material in embedded capacitor, microphone or Pulsed power device.
Using following verification experimental verifications effect of the present invention
Embodiment 1：A kind of preparation method of high energy storage density dielectric substance, it is completed according to the following steps：
One, Organic-inorganic composite slurry A is prepared：1., prepare material：Weigh in parts by weight 30 parts of epoxy resin E-51, 30 parts of CaCu 3 Ti 4 O nanofibers, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 60 parts of butanone, 0.27 part of triethyl phosphate, 3 partsOFS-6020 and 2 part of Resiflow P-67；The diameter 400nm of the CaCu 3 Ti 4 O nanofiber, length are 20μm；2., 30 parts of epoxy resin E-51 are added in 30 parts of butanone, ultrasonic agitation is to epoxy resin E-51 under temperature 45 C It is completely dissolved, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 0.27 part of triethyl phosphate and 2 parts of Resiflow P- is then added 67, low whipping speed is to stir 60min under 300 revs/min, obtains organic matrix solution；2., by 30 parts of CaCu 3 Ti 4 O Nanowires Dimension ultrasonic agitation is scattered in 30 parts of butanone, obtains suspension, and suspension ultrasonic agitation is then scattered in organic matrix solution In, add 3 partsOFS-6020, low whipping speed are to stir 60min under 300 revs/min, obtain mixture Mixture A is poured into the rotating speed ball milling 16h in ball grinder with 500rpm, obtains Organic-inorganic composite slurry A by A；
Two, Organic-inorganic composite slurry B is prepared：1., prepare material：Weigh in parts by weight 30 parts of epoxy resin E-51, 10 parts of barium titanate nano fibers, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 60 parts of butanone, 0.27 part of triethyl phosphate, 2 partsOFS-6020 and 2 part of Resiflow P-67；The diameter 100nm of the barium titanate nano fiber, length 15 μm；2., 30 parts of epoxy resin E-51 are added in 30 parts of butanone, be stirred by ultrasonic under temperature 45 C complete to epoxy resin E-51 Then 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 0.27 part of triethyl phosphate and 2 parts of Resiflow P-67 are added in fully dissolved, Low whipping speed is to stir 60min under 300 revs/min, obtains organic matrix solution；2., 10 parts of barium titanate nano fibers are surpassed Sound is dispersed with stirring in 30 parts of butanone, obtains suspension, and then suspension ultrasonic agitation is scattered in organic matrix solution, then It is added 2 partsOFS-6020, low whipping speed are to stir 60min under 300 revs/min, obtain mixture B, will Mixture B pours into the rotating speed ball milling 16h with 500rpm in ball grinder, obtains Organic-inorganic composite slurry B；
Three, Organic-inorganic composite slurry A and Organic-inorganic composite slurry B are respectively coated on two copper foil base materials, After solvent completely volatilization, sheet material A and sheet material B are obtained；
Four, it is sub- to put a strata acyl as topsheet as matrix sheet material, sheet material A on the coating of matrix sheet material by sheet material B Topsheet is finally superimposed by coating in the form of lower by amine film, and hot pressing is compound, is cured at being then 200 DEG C in temperature 180min is to get to high energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 15 μm.
It is detected by the high energy storage density dielectric substance prepared to embodiment 1, it is known that high storage prepared by embodiment 1 The dielectric constant of energy density dielectric substance is 100, energy storage density 23.5J/cm3。
Embodiment 2：A kind of preparation method of high energy storage density dielectric substance, it is completed according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., prepare material：Weigh in parts by weight 30 parts of epoxy resin E-51, 30 parts of barium titanate nano fibers, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 60 parts of butanone, 0.27 part of triethyl phosphate, 3 partsOFS-6020 and 2 part of Resiflow P-67；The diameter 100nm of the barium titanate nano fiber, length 15 μm；2., 30 parts of epoxy resin E-51 are added in 30 parts of butanone, be stirred by ultrasonic under temperature 45 C complete to epoxy resin E-51 Then 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 0.27 part of triethyl phosphate and 2 parts of Resiflow P-67 are added in fully dissolved, Low whipping speed is to stir 60min under 300 revs/min, obtains organic matrix solution；2., 30 parts of barium titanate nano fibers are surpassed Sound is dispersed with stirring in 30 parts of butanone, obtains suspension, and then suspension ultrasonic agitation is scattered in organic matrix solution, then It is added 3 partsOFS-6020, low whipping speed are to stir 60min under 300 revs/min, obtain mixture, will mix It closes object and pours into the rotating speed ball milling 16h in ball grinder with 500rpm, obtain Organic-inorganic composite slurry；
Three, Organic-inorganic composite slurry is respectively coated on two copper foil base materials, after solvent completely volatilization, is obtained Sheet material A and sheet material B；
Four, it is sub- to put a strata acyl as topsheet as matrix sheet material, sheet material A on the coating of matrix sheet material by sheet material B Topsheet is finally superimposed by coating in the form of lower by amine film, and hot pressing is compound, is cured at being then 180 DEG C in temperature 180min is to get to high energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 15 μm.
It is detected by the high energy storage density dielectric substance prepared to embodiment 2, it is known that high storage prepared by embodiment 2 The dielectric constant of energy density dielectric substance is 85, energy storage density 20J/cm3。
Embodiment 3：A kind of preparation method of high energy storage density dielectric substance, it is completed according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., prepare material：Weigh in parts by weight 30 parts of epoxy resin E-51, 30 parts of barium titanate nano fibers, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 60 parts of butanone, 0.27 part of triethyl phosphate, 3 partsOFS-6020 and 2 part of Resiflow P-67；The diameter 100nm of the barium titanate nano fiber, length 15 μm；2., 30 parts of epoxy resin E-51 are added in 30 parts of butanone, be stirred by ultrasonic under temperature 45 C complete to epoxy resin E-51 Then 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 0.27 part of triethyl phosphate and 2 parts of Resiflow P-67 are added in fully dissolved, Low whipping speed is to stir 60min under 300 revs/min, obtains organic matrix solution；2., 30 parts of barium titanate nano fibers are surpassed Sound is dispersed with stirring in 30 parts of butanone, obtains suspension, and then suspension ultrasonic agitation is scattered in organic matrix solution, then It is added 3 partsOFS-6020, low whipping speed are to stir 60min under 300 revs/min, obtain mixture, will mix It closes object and pours into the rotating speed ball milling 16h in ball grinder with 500rpm, obtain Organic-inorganic composite slurry；
Three, Organic-inorganic composite slurry is respectively coated on two copper foil base materials, after solvent completely volatilization, is obtained Sheet material A and sheet material B；
Four, it is sub- to put a strata acyl as topsheet as matrix sheet material, sheet material A on the coating of matrix sheet material by sheet material B Amine film is then coated with one layer of Organic-inorganic composite slurry, and one layer of polyimide film is put after solvent completely volatilization, finally will top Facesheet is superimposed by coating in the form of lower, and hot pressing is compound, and solidification 180min stores up to get to height at being then 200 DEG C in temperature It can density dielectric substance；The thickness of the high energy storage density dielectric substance is 25 μm.
It is detected by the high energy storage density dielectric substance prepared to embodiment 3, it is known that high storage prepared by embodiment 3 The dielectric constant of energy density dielectric substance is 85, energy storage density 33J/cm3。
Embodiment 4：A kind of preparation method of high energy storage density dielectric substance, it is completed according to the following steps：
One, Organic-inorganic composite slurry A is prepared：1., prepare material：Weigh in parts by weight 30 parts of epoxy resin E-51, 30 parts of CaCu 3 Ti 4 O nanofibers, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 60 parts of butanone, 0.27 part of triethyl phosphate, 3 partsOFS-6020 and 2 part of Resiflow P-67；The diameter 400nm of the CaCu 3 Ti 4 O nanofiber, length are 20μm；2., 30 parts of epoxy resin E-51 are added in 30 parts of butanone, ultrasonic agitation is to epoxy resin E-51 under temperature 45 C It is completely dissolved, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 0.27 part of triethyl phosphate and 2 parts of Resiflow P- is then added 67, low whipping speed is to stir 60min under 300 revs/min, obtains organic matrix solution；2., by 30 parts of CaCu 3 Ti 4 O Nanowires Dimension ultrasonic agitation is scattered in 30 parts of butanone, obtains suspension, and suspension ultrasonic agitation is then scattered in organic matrix solution In, add 3 partsOFS-6020, low whipping speed are to stir 60min under 300 revs/min, obtain mixture Mixture A is poured into the rotating speed ball milling 16h in ball grinder with 500rpm, obtains Organic-inorganic composite slurry A by A；
Two, Organic-inorganic composite slurry B is prepared：1., prepare material：Weigh in parts by weight 30 parts of epoxy resin E-51, 10 parts of barium titanate nano fibers, 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 60 parts of butanone, 0.27 part of triethyl phosphate, 2 partsOFS-6020 and 2 part of Resiflow P-67；The diameter 100nm of the barium titanate nano fiber, length 15 μm；2., 30 parts of epoxy resin E-51 are added in 30 parts of butanone, be stirred by ultrasonic under temperature 45 C complete to epoxy resin E-51 Then 0.3 part of 2-methylimidazole, 3 parts of dicyandiamides, 0.27 part of triethyl phosphate and 2 parts of Resiflow P-67 are added in fully dissolved, Low whipping speed is to stir 60min under 300 revs/min, obtains organic matrix solution；2., 10 parts of barium titanate nano fibers are surpassed Sound is dispersed with stirring in 30 parts of butanone, obtains suspension, and then suspension ultrasonic agitation is scattered in organic matrix solution, then It is added 2 partsOFS-6020, low whipping speed are to stir 60min under 300 revs/min, obtain mixture B, will Mixture B pours into the rotating speed ball milling 16h with 500rpm in ball grinder, obtains Organic-inorganic composite slurry B；
Three, Organic-inorganic composite slurry A is respectively coated on two copper foil base materials, after solvent completely volatilization, is obtained Sheet material A and sheet material B；
Four, as matrix sheet material, sheet material A overlies one layer as topsheet, in the coating of matrix sheet material to be had sheet material B Topsheet is superimposed by coating in the form of lower by machine-inorganic compounding slurry B after solvent completely volatilization, and hot pressing is compound, then Solidification 180min is to get to high energy storage density dielectric substance at being 200 DEG C in temperature；The high energy storage density dielectric substance Thickness be 25 μm.
It is detected by the high energy storage density dielectric substance prepared to embodiment 4, it is known that high storage prepared by embodiment 4 The dielectric constant of energy density dielectric substance is 100, energy storage density 36.5J/cm3。

Claims (10)

1. a kind of high energy storage density dielectric substance, it is characterised in that high energy storage density dielectric substance is by Organic-inorganic composite Film and organic film superposition are made, and the outermost layer of high energy storage density dielectric substance is Organic inorganic film, the high energy storage The thickness of density dielectric substance is 8 μm~500 μm.
2. a kind of high energy storage density dielectric substance according to claim 1, it is characterised in that the Organic-inorganic composite The thickness of film is 3 μm~30 μm；The thickness of the organic film is 2 μm~20 μm.
3. a kind of high energy storage density dielectric substance according to claim 1, it is characterised in that the high energy storage density electricity The material for the multilayer Organic inorganic film for including in dielectric material is identical or material is different；
When there is Organic inorganic film and Organic inorganic film phase in the lamination of the high energy storage density dielectric substance When neighbour's superposition, the material of two layers of Organic inorganic film of adjacent superposition is different；
When in the high energy storage density dielectric substance including multilayer organic film, there is at least alternating floor between two layers of organic film Machine-inorganic substances compound membrane.
4. a kind of high energy storage density dielectric substance according to claim 1, it is characterised in that the Organic-inorganic composite Film is made of organic matrix, inorganic filler and auxiliary agent；
The organic matrix is epoxy resin, liquid crystal epoxy resin, polybutadiene, polystyrene, polytetrafluoroethylene (PTFE), gathers Vinylidene, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyimides, phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon；
The inorganic filler is one-dimensional filler, two-dimentional filler or granular powder filler；
The one-dimensional filler is barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3It is nanofiber, dilute Earth elements adulterate BaTiO3Nano wire, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates Nano wire, barium strontium titanate nanofiber, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate are received Rice noodles, barium calcium titanate nanofiber, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, aluminium oxide nano Line, boron nitride nano-tube, boron nitride nanometer line, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide Titanium nanofiber, titanium dioxide nano thread, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide are received Rice noodles, nickel oxide nanowires, tin oxide nano-wire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, oxidation are sub- Fe nanowire or metal nanometer line, metal is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin in the metal nanometer line, described Rare earth doped BaTiO3Nanofiber rare earth elements be La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu, it is described Rare earth doped BaTiO3Nano wire rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu；
A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm；
The two-dimentional filler is boron nitride nanosheet, graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, two sulphur Change molybdenum nanometer sheet, titanium disulfide nanometer sheet, tungsten disulfide nano slices, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C nano piece, WC nanometer sheets, WS2Nanometer sheet, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene；
The length of the two-dimentional filler is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm；
The granular powder filler is barium titanate nano particle, rare earth doped BaTiO3Nano particle, CaCu 3 Ti 4 O nanometer Particle, strontium titanate nanoparticles, barium strontium titanate nano particle, calcium titanate nanoparticles, barium calcium titanate nano particle, potassium-sodium niobate Nano particle, Zinc oxide nanoparticle, aluminum oxide nanoparticle, boron nitride nano-tube, silicon nitride nano particles, silica are received Rice grain, aluminum nitride nanometer particle, titania nanoparticles, nanometer silicon carbide particle, cuprous oxide nano particle, copper oxide Nano particle, manganese dioxide nano particle, nickel oxide nanoparticle, tin oxide nanoparticles, tungsten oxide nanoparticles, zirconium oxide Nano particle, ferric oxide nanometer particle, ferrous oxide nano particle or metal nanoparticle；
The shape of the granular powder filler is spherical or spherical, and average grain diameter is 10nm~3 μm；
The auxiliary agent is at least one of dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent, the dispersion Agent is nonionic emulsifier, cationic emulsifier or anionic emulsifier, and the coupling agent is silane coupling agent, metatitanic acid Ester coupling agent, aluminate coupling agent or phosphate coupling agent, the levelling agent are silicone levelling agent or fluorocarbons Class levelling agent；
Inorganic filler mass fraction is 0.5%~80% in the Organic inorganic film, and the mass fraction of auxiliary agent is 0.5% ~15%, the mass fraction of organic matrix is 5%~99%；
The organic film carrys out acyl selected from polyimide film, epoxy resin film, polytetrafluoroethylene film, polyvinylidene fluoride film, span Imide resin film, bismaleimide-triazine resin film and acrylic resin film.
5. a kind of preparation method of high energy storage density dielectric substance, it is characterised in that a kind of high energy storage density dielectric substance Preparation method is completed according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., organic matrix is added in solvent A, stirred at 30~60 DEG C of temperature Ultrasonic 10min~120min obtains organic matrix solution；2., by inorganic filler ultrasonic agitation be scattered in solvent B, hanged Then suspension ultrasonic agitation is scattered in organic matrix solution by supernatant liquid, add auxiliary agent, and ultrasonic agitation is uniformly mixed, obtains To mixture, rotating speed ball milling 10h~22h with 300rpm~700rpm in ball grinder is poured the mixture into, organic and inorganic is obtained Composite mortar；The solvent B and solvent A are same substances；
Two, repetition step 1 operation preparation several pieces Organic-inorganic composite slurry, and several pieces Organic-inorganic composite slurry Material is identical or material is different；
Three, two parts are taken out in several pieces Organic-inorganic composite slurry to be respectively coated on two base materials, waits for that solvent volatilizees completely Afterwards, two sheets are obtained；
Four, one is taken in the two sheets that step 3 obtains to be used as matrix sheet material, another is as topsheet, in matrix sheet material Coating on require to be sequentially coated with machine-inorganic compounding slurry or put one layer and have according to high energy storage density dielectric substance lamination Machine film coats Organic-inorganic composite slurry and first carries out solvent volatilization process, continues to operate after solvent volatilizees completely, most every time Topsheet is superimposed by coating in the form of lower afterwards, hot pressing is compound, then temperature be 80~200 DEG C at solidification 60min~ 180min is to get to high energy storage density dielectric substance；The thickness of the high energy storage density dielectric substance is 8 μm~500 μm；
The high energy storage density dielectric substance lamination requires as follows：
When there is Organic inorganic film and Organic inorganic film phase in the lamination of the high energy storage density dielectric substance When neighbour's superposition, the material of two layers of Organic inorganic film of adjacent superposition is different；
When in the high energy storage density dielectric substance including multilayer organic film, there is at least alternating floor between two layers of organic film Machine-inorganic substances compound membrane.
6. a kind of preparation method of high energy storage density dielectric substance according to claim 5, it is characterised in that step 1 1. the mass ratio of organic matrix described in and solvent A is 1:(1~30)；Step 1 2. described in suspension inorganic filler with it is molten The mass ratio of agent B is 1:(1~10)；
Inorganic filler mass fraction is in Organic inorganic film in the high energy storage density dielectric substance that step 4 obtains 0.5%~80%, the mass fraction of auxiliary agent is 0.5%~15%, and the mass fraction of organic matrix is 5%~99%；
The thickness of Organic inorganic film is 3 μm~30 μm in the high energy storage density dielectric substance that step 4 obtains, organic film Thickness be 2 μm~20 μm；
Base material described in rapid three is non-conductive substrate or conductive base, and the non-conductive substrate is polyethylene terephthalate Or polyimides；The conductive base is aluminium foil, copper foil, goldleaf, silver foil, nickel foil or tinfoil paper；
Step 1 1. described in solvent A be butanone, acetone, N,N-dimethylformamide or DMAC N,N' dimethyl acetamide；
Step 1 2. described in auxiliary agent be dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent at least one Kind, the dispersant is nonionic emulsifier, cationic emulsifier or anionic emulsifier, and the coupling agent is silane Coupling agent, titanate coupling agent, aluminate coupling agent or phosphate coupling agent, the levelling agent be silicone levelling agent or Fluorocarbons class levelling agent；
Step 1 1. described in organic matrix be epoxy resin, it is liquid crystal epoxy resin, polybutadiene, polystyrene, poly- Tetrafluoroethene, Kynoar, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyamides are sub- Amine, phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon；
Step 1 2. described in inorganic filler be one-dimensional filler, two-dimentional filler or granular powder filler；The one-dimensional filler For barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3Nanofiber, rare earth doped BaTiO3It receives Rice noodles, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, barium strontium titanate nanometer Fiber, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, barium calcium titanate Nanowire Dimension, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nano-tube, nitridation Boron nanowire, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, titanium dioxide are received Rice noodles, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide nanowires, oxygen Change stannum nanowire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal nanometer line, Metal is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin, the rare earth doped BaTiO in the metal nanometer line3 Nanofiber rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu, the rare earth doped BaTiO3It receives Rice noodles rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu；The two-dimentional filler be boron nitride nanosheet, Graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, titanium disulfide nanometer sheet, tungsten disulfide Nanometer sheet, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C nano piece, WC nanometer sheets, WS2It receives Rice piece, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene；The granular powder filler is barium titanate nano particle, rare earth Element doping BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanate nanoparticles, barium strontium titanate nano particle, metatitanic acid Calcium nano, barium calcium titanate nano particle, potassium-sodium niobate nano particle, Zinc oxide nanoparticle, aluminum oxide nanoparticle, nitrogen Change boron nanotube, silicon nitride nano particles, nano SiO 2 particle, aluminum nitride nanometer particle, titania nanoparticles, carbon SiClx nano particle, cuprous oxide nano particle, copper oxide nanometer particle, manganese dioxide nano particle, nickel oxide nanoparticle, Tin oxide nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, ferric oxide nanometer particle, ferrous oxide nano particle Or metal nanoparticle；A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm；Described two The length for tieing up filler is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm；The granular powder filler Shape be spherical or spherical, average grain diameter is 10nm~3 μm；
Organic film described in step 4 be selected from polyimide film, epoxy resin film, polytetrafluoroethylene film, polyvinylidene fluoride film, Bismaleimide Resin Film, bismaleimide-triazine resin film and acrylic resin film.
7. a kind of high energy storage density dielectric substance, it is characterised in that high energy storage density dielectric substance is by multilayer organic and inorganic Composite membrane superposition is made, and the thickness of the high energy storage density dielectric substance is 8 μm~500 μm；The high energy storage density electricity is situated between The material at least two of multilayer Organic inorganic film in material, and two layers of Organic inorganic film of adjacent superposition Material is different.
8. a kind of high energy storage density dielectric substance according to claim 7, it is characterised in that the Organic-inorganic composite The thickness of film is 3 μm~30 μm；
The Organic inorganic film is made of organic matrix, inorganic filler and auxiliary agent；
The organic matrix is epoxy resin, liquid crystal epoxy resin, polybutadiene, polystyrene, polytetrafluoroethylene (PTFE), gathers Vinylidene, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyimides, phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon；
The inorganic filler is one-dimensional filler, two-dimentional filler or granular powder filler；The one-dimensional filler is received for barium titanate Rice fiber, barium titanate nano line, rare earth doped BaTiO3Nanofiber, rare earth doped BaTiO3Nano wire, copper titanate Calcium nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, barium strontium titanate nanofiber, strontium titanates Barium nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, barium calcium titanate nanofiber, potassium-sodium niobate Nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nano-tube, boron nitride nanometer line, nitrogen SiClx nano wire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, titanium dioxide nano thread, silicon carbide Nano wire, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide nanowires, tin oxide nano-wire, Tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal nanometer line, the metal Metal is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin, the rare earth doped BaTiO in nano wire3In nanofiber Rare earth element is La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu, the rare earth doped BaTiO3Nano wire middle rare earth Element is La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu；The two-dimentional filler is boron nitride nanosheet, graphene nano Piece, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, titanium disulfide nanometer sheet, tungsten disulfide nano slices, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C nano piece, WC nanometer sheets, WS2Nanometer sheet, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene；The granular powder filler is barium titanate nano particle, rare earth element Adulterate BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanate nanoparticles, barium strontium titanate nano particle, calcium titanate are received Rice grain, barium calcium titanate nano particle, potassium-sodium niobate nano particle, Zinc oxide nanoparticle, aluminum oxide nanoparticle, boron nitride Nanotube, silicon nitride nano particles, nano SiO 2 particle, aluminum nitride nanometer particle, titania nanoparticles, silicon carbide Nano particle, cuprous oxide nano particle, copper oxide nanometer particle, manganese dioxide nano particle, nickel oxide nanoparticle, oxidation Tin nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, ferric oxide nanometer particle, ferrous oxide nano particle or gold Metal nano-particle；A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm；The two dimension is filled out The length of material is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm；The shape of the granular powder filler Shape is spherical or spherical, and average grain diameter is 10nm~3 μm；
The auxiliary agent is at least one of dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent, the dispersion Agent is nonionic emulsifier, cationic emulsifier or anionic emulsifier, and the coupling agent is silane coupling agent, metatitanic acid Ester coupling agent, aluminate coupling agent or phosphate coupling agent, the levelling agent are silicone levelling agent or fluorocarbons Class levelling agent；
Inorganic filler mass fraction is 0.5%~80% in the Organic inorganic film, and the mass fraction of auxiliary agent is 0.5% ~15%, the mass fraction of organic matrix is 5%~99%.
9. a kind of preparation method of high energy storage density dielectric substance as claimed in claim 7, it is characterised in that a kind of high storage The preparation method of energy density dielectric substance is completed according to the following steps：
One, Organic-inorganic composite slurry is prepared：1., organic matrix is added in solvent A, stirred at 30~60 DEG C of temperature Ultrasonic 10min~120min obtains organic matrix solution；2., by inorganic filler ultrasonic agitation be scattered in solvent B, hanged Then suspension ultrasonic agitation is scattered in organic matrix solution by supernatant liquid, add auxiliary agent, and ultrasonic agitation is uniformly mixed, obtains To mixture, rotating speed ball milling 10h~22h with 300rpm~700rpm in ball grinder is poured the mixture into, organic and inorganic is obtained Composite mortar；The solvent B and solvent A are same substances；
Two, repetition step 1 operation preparation several pieces Organic-inorganic composite slurry, and several pieces Organic-inorganic composite slurry Material at least two；
Three, two parts are taken out in several pieces Organic-inorganic composite slurry to be respectively coated on two base materials, waits for that solvent volatilizees completely Afterwards, two sheets are obtained；
Four, one is taken in the two sheets that step 3 obtains to be used as matrix sheet material, another is as topsheet, in matrix sheet material Coating on according to high energy storage density dielectric substance lamination require be sequentially coated with machine-inorganic compounding slurry, be coated with every time Machine-inorganic compounding slurry first carries out solvent volatilization process, continues to operate after solvent volatilizees completely, finally by topsheet to apply Form superposition of the layer under, hot pressing is compound, and solidification 60min~180min stores up to get to height at being then 80~200 DEG C in temperature It can density dielectric substance；The thickness of the high energy storage density dielectric substance is 8 μm~500 μm.
10. a kind of preparation method of high energy storage density dielectric substance according to claim 9, it is characterised in that step 1 1. the mass ratio of organic matrix described in and solvent A is 1:(1~30)；Step 1 2. described in suspension inorganic filler with it is molten The mass ratio of agent B is 1:(1~10)；
Inorganic filler mass fraction is in Organic inorganic film in the high energy storage density dielectric substance that step 4 obtains 0.5%~80%, the mass fraction of auxiliary agent is 0.5%~15%, and the mass fraction of organic matrix is 5%~99%；
The thickness of Organic inorganic film is 3 μm~30 μm in the high energy storage density dielectric substance that step 4 obtains, organic film Thickness be 2 μm~20 μm；
Base material described in step 3 is non-conductive substrate or conductive base, and the non-conductive substrate is polyethylene terephthalate Ester or polyimides；The conductive base is aluminium foil, copper foil, goldleaf, silver foil, nickel foil or tinfoil paper；
Step 1 1. described in solvent A be butanone, acetone, N,N-dimethylformamide or DMAC N,N' dimethyl acetamide；
Step 1 2. described in auxiliary agent be dispersant, coupling agent, levelling agent, antifoaming agent, curing agent and accelerating agent at least one Kind, the dispersant is nonionic emulsifier, cationic emulsifier or anionic emulsifier, and the coupling agent is silane Coupling agent, titanate coupling agent, aluminate coupling agent or phosphate coupling agent, the levelling agent be silicone levelling agent or Fluorocarbons class levelling agent；
Step 1 1. described in organic matrix be epoxy resin, it is liquid crystal epoxy resin, polybutadiene, polystyrene, poly- Tetrafluoroethene, Kynoar, bimaleimide resin, bismaleimide-triazine resin, acrylic resin, polyamides are sub- Amine, phenolic resin, Polyurethane, bicyclic penta the eleventh of the twelve Earthly Branches diene type cyanate ester resin, polyphenylene oxide resin, nitrile rubber or nylon；
Step 1 2. described in inorganic filler be one-dimensional filler, two-dimentional filler or granular powder filler；The one-dimensional filler For barium titanate nano fiber, barium titanate nano line, rare earth doped BaTiO3Nanofiber, rare earth doped BaTiO3It receives Rice noodles, CaCu 3 Ti 4 O nanofiber, CaCu 3 Ti 4 O nano wire, strontium titanates nanofiber, strontium titanates nano wire, barium strontium titanate nanometer Fiber, barium strontium titanate nano wire, calcium titanate nanofiber, calcium titanate nano wire, barium calcium titanate nano wire, barium calcium titanate Nanowire Dimension, potassium-sodium niobate nano wire, zinc oxide nanowire, alumina nano fiber, alumina nanowires, boron nitride nano-tube, nitridation Boron nanowire, beta-silicon nitride nanowire, nanometer silica line, aluminum nitride nanowire, titanium dioxide nanofiber, titanium dioxide are received Rice noodles, silicon carbide nanometer line, nano cuprous oxide wire, cupric oxide nano line, manganese dioxide nanowire, nickel oxide nanowires, oxygen Change stannum nanowire, tungsten oxide nano, zirconium oxide nano wire, iron oxide nano-wire, ferrous oxide nano wire or metal nanometer line, Metal is silver, copper, iron, aluminium, silicon, nickel, titanium, tungsten or tin, the rare earth doped BaTiO in the metal nanometer line3 Nanofiber rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu, the rare earth doped BaTiO3It receives Rice noodles rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Ga, Dy, Er or Lu；The two-dimentional filler be boron nitride nanosheet, Graphene nanometer sheet, graphene nanobelt, tin oxide nano piece, molybdenum disulfide nano sheet, titanium disulfide nanometer sheet, tungsten disulfide Nanometer sheet, TiO2Nanometer sheet, CuO nanometer sheet, Nano silver piece, black squama, Ti2C nano piece, W2C nano piece, WC nanometer sheets, WS2It receives Rice piece, MoSe2Nanometer sheet, WSe2Nanometer sheet, boron alkene or phosphorus alkene；The granular powder filler is barium titanate nano particle, rare earth Element doping BaTiO3Nano particle, CaCu 3 Ti 4 O nano particle, strontium titanate nanoparticles, barium strontium titanate nano particle, metatitanic acid Calcium nano, barium calcium titanate nano particle, potassium-sodium niobate nano particle, Zinc oxide nanoparticle, aluminum oxide nanoparticle, nitrogen Change boron nanotube, silicon nitride nano particles, nano SiO 2 particle, aluminum nitride nanometer particle, titania nanoparticles, carbon SiClx nano particle, cuprous oxide nano particle, copper oxide nanometer particle, manganese dioxide nano particle, nickel oxide nanoparticle, Tin oxide nanoparticles, tungsten oxide nanoparticles, Zirconium oxide nano grain, ferric oxide nanometer particle, ferrous oxide nano particle Or metal nanoparticle；A diameter of 20nm~1000nm of the one-dimensional filler, length are 100nm~100 μm；Described two The length for tieing up filler is 50nm~10 μm, and width is 50nm~10 μm, and thickness is 10nm~5 μm；The granular powder filler Shape be spherical or spherical, average grain diameter is 10nm~3 μm.
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