CN108290321A - Carrier-substrate adhesive systems - Google Patents
Carrier-substrate adhesive systems Download PDFInfo
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- CN108290321A CN108290321A CN201680072220.2A CN201680072220A CN108290321A CN 108290321 A CN108290321 A CN 108290321A CN 201680072220 A CN201680072220 A CN 201680072220A CN 108290321 A CN108290321 A CN 108290321A
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- carrier
- cement
- substrate
- film
- permeable
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/60—Releasing, lubricating or separating agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/003—Cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/18—Handling of layers or the laminate
- B32B38/1825—Handling of layers or the laminate characterised by the control or constructional features of devices for tensioning, stretching or registration
- B32B38/1833—Positioning, e.g. registration or centering
- B32B38/1841—Positioning, e.g. registration or centering during laying up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/04—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving separate application of adhesive ingredients to the different surfaces to be joined
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
- B29C63/0004—Component parts, details or accessories; Auxiliary operations
- B29C63/0013—Removing old coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/0007—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality
- B32B37/003—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality to avoid air inclusion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Micromachines (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Disclose a kind of system and method for creating 3-D nano, structure.The system includes that the substrate of carrier is joined to using cement.Cement can be vaporizable or sublimable.Carrier can be glass or class glass substance.In some embodiments, carrier can be permeable, can pass through one or more holes of its effusion when being converted into gaseous state using heat, pressure, light or other methods with cement.Substrate is engaged to carrier using cement.Then processing substrate is to form film.The processing can include grinding, polishing, etching, patterning or other steps.Then processed film is aligned and is attached to the film for receiving substrate or previously having deposited.After being suitably attached, then its distillation or vaporization are heated, depressurized or be otherwise result in cement, thus discharges processed film from carrier.
Description
Technical field
This application claims the U.S. Provisional Patent Application Serial No. 62/238,930 and 62/ submitted on October 8th, 2015
238,764 and the U.S. Patent Application Serial Number 15/161,646 submitted on May 23rd, 2016 priority, it is open logical
Reference is crossed to be incorporated herein with its entirety.
Background technology
3-D nano, structure has a function in various applications, photonic crystal such as with embedded devices, three-dimensionally integrated
Semi-conductor electronic device, three-dimensional semiconductor memory, organization bracket, progressive optical index components, heterogeneous single-crystal lattice mismatch
Structure etc..
In some embodiments, these 3-D nano, structures be by by the film being pre-patterned it is aligned with each other and stack or
Person is aligned and is stacked to receive and made on substrate.Typically, some in these films are patterned.This patterning can be with
Including introduction hole, channel, region, electronics or the photonic device or other structures for injecting chemical element.Additionally, patterning can be with
Including film is divided into multiple disjoint parts.
The various technologies of the film to stack pattern have been described.For example, each film can be arranged on frame.
In such embodiment, film can be coupled to external frame by using cracking point.Patterned film and the frame of attachment one
The film with substrate or previously deposited is played to be aligned.After being aligned, cracking point can be cut off, thus by frame and UF membrane.
However, although this technology may be acceptable in some applications, it may be unsuitable for that there is pressure to answer
The film of power or disjoint film.
Therefore, if there is for being transported and being aligned to film to create the improved carrier system of 3-D nano, structure
System, then will be beneficial.
Invention content
Disclose a kind of system and method for creating 3-D nano, structure.The system includes that use can be vaporized
Or sublimable cement is joined to the substrate of carrier.Carrier can be glass or class glass substance, silicon, another inorganic material,
Or itself can be that can vaporize or sublimable material.In other embodiments, carrier can be sintering, aeroge or
Capillary array.In some embodiments, carrier can be permeable.It is heated in cement for example, carrier can have
Or it can be by one or more holes of its effusion when being otherwise converted into gas.It will such as silicon, arsenic using cement
Gallium, gallium nitride, graphene or another material substrate be joined to carrier.Then substrate can be handled to form desired film.It should
Processing can include grinding, slice, polish, via the patterning of means of photolithography, etching, metallization or other patterned hands
Section.Then the substrate or processed film that will herein be referred to as product are registered to the film for receiving substrate or previously depositing.
Its distillation or vaporization after being appropriately aligned, are then heated, depressurized or are otherwise result in cement, thus from carrier
Release liners or processed film.The process can be repeated as many times to build desired membrane stack.
In one embodiment, a kind of method for the product for detaching and being attached to carrier using cement is disclosed.This method
Including making cement be changed into liquid from solid；And liquid is wicked（wick）The gap between carrier and product is left, with
Just from carrier delivery article.In certain embodiments, carrier is permeable.In some embodiments, cement is via decomposition
Or fusing at least one of and be changed into liquid.In some embodiments, be stored at least partially in can for the cement of liquid
In the carrier of infiltration.In some embodiments, the cement of liquid is changed into gas and passes through permeable carrier.
In some embodiments, the cement of liquid is changed into gas, and at least some of gas in its liquid or solid-state extremely
Few one kind accumulates in permeable carrier.
In another embodiment, a kind of method of Separation Product is disclosed.This method includes：By via increase part or
The temperature of whole atmosphere or reducing its pressure makes cement be changed from solid and from cement delivery article.In certain realities
It applies in example, cement is vaporizable or sublimable.In some embodiments, cement include have one or more cores and
One or more handles（handle）Molecule, to optimize Solvent Solubility, chemical resistance, cohesive force, adhesiveness, fusing point, thermal capacitance
At least one of with vapour pressure.In some embodiments, cement decompose or be modified in structure it is one or more can
Distillation or vaporizable species（species）.In some embodiments, the light-initiated fracture of cement experience or structural change are at tool
There are one or more reagents of higher vapor pressure.In certain embodiments, cement attaches the article to carrier.In certain implementations
In example, carrier is permeable.In certain embodiments, permeable carrier includes aeroge, xerogel or from sol gel
At least one of other materials of generation.In certain embodiments, permeable carrier include capillary array, frit or
At least one of porous fibrous material.In certain embodiments, permeable carrier is including being not porous at least one embedding
Enter formula structure.In some embodiments, damascene structures adjust heat, electromagnetism, fluid or the engineering properties of permeable carrier.
In another embodiment, a kind of method handling substrate to form film is disclosed.This method includes will have first
First cement of fusing point and the second junction with the second fusing point higher than the first fusing point are mixed to form engagement
Agent composition；Melt joint compound mix；Carrier is bonded to substrate using the joint compound mix of fusing；Make the first cement
Evaporation distils or is otherwise removed from joint compound mix, leaves the second cement；From joint compound mix
The post-processing substrate of the first cement of middle removal is to form film；And make after the treatment joint compound mix distil or evaporate with
Membrane removal is gone from carrier.In certain embodiments, the temperature for engaging generation is less than the temperature that film is removed from carrier.
Description of the drawings
The disclosure in order to better understand, refer to the attached drawing, attached drawing are herein incorporated by reference and in the accompanying drawings：
Figure 1A shows the carrier and substrate before attachment；
Figure 1B shows the substrate for being joined to carrier；
Fig. 2A shows the film for being joined to carrier after grinding；
Fig. 2 B show the film of Fig. 2A after patterning；
Fig. 2 C show the top view of the film of Fig. 2 B；
Fig. 3 A show the film and carrier of Fig. 2 B when the film and carrier alignment of Fig. 2 B are to reception substrate；
Fig. 3 B show the nanostructure created after membrane stack；
Fig. 4 shows the flow chart according to one embodiment；
Fig. 5 shows the porous carrier according to one embodiment；
Fig. 6 shows the close-up illustration of the material that may be used as carrier according to one embodiment；
Fig. 7 compares the fusing point and standard steam pressure for various possible cements；And
Fig. 8 shows the flow chart of the mixture using cement.
Specific implementation mode
Substrate is attached to carrier using cement, and then substrate can be handled to create film.Then can
It is enough by the substrate for being referred to as product or membrane stack on the top for receiving substrate or other products previously deposited to create three-dimensional
Nanostructure.
Through the disclosure, the attachment and film with reference to substrate are from the separation of carrier.It is, however, to be noted that in certain realities
It applies in example, substrate is not processed after being attached to carrier.For example, carrier can be used for such as supporting lining during transportation
Bottom.Therefore, although the present disclosure describes wherein substrate processed embodiments before separation, it is to be appreciated that, at this
In each of a little embodiments, the product detached can be initial substrates or processed film.
Figure 1A shows carrier 10 and substrate 20 before treatment.Carrier 10 can be any semi-rigid amorphous or crystallization
Material or compound.In some embodiments, carrier 10 can be flexible glass or similar material.The size of carrier 10 can be with
Variation.For example, its length and width can be based on the size for the film being created.In one embodiment, carrier 10 can have
There is the diameter of 25 mm, however other sizes are within the scope of this disclosure.The thickness of carrier 10 can also change, but at some
In embodiment, which can be between 0.1 mm and 10 mm, however other thickness are also possible.
In some embodiments, carrier 10 can be permeable.In one embodiment, the permeability of carrier 10 can be with
More than 1x10-12Millidarcy.Permeable carrier 10 can have various constructions and material.For example, in one embodiment, carrying
Body 10 contains the one or more holes 12 for the thickness for extending through carrier 10, as illustrated in FIG. 5.This some holes 12 can have
There is diameter in the range of nanometer to hundreds of microns, however the diameter can change.The porosity of carrier 10 can be more than
20%.In some embodiments, porosity is more than 50%.The purpose in hole 12 is described in more detail below.
In another embodiment, carrier 10 following material due to being made of but porous：The material includes only having
It is in contact with each other at the point of limit, to leave in the path for being large enough that gas can pass through carrier between particles
Grain.For example, Fig. 5 shows the view of such material, in this embodiment, which is sintered glass.Fig. 5 shows material
Close-up illustration so that the path between particle is visible.Of course, it is possible to using the path between particle or molecule is included
Other materials, and the present disclosure is not limited to the material or any other certain materials.
In another embodiment, carrier 10 can be distilled or vaporizable material is made by one or more.In the reality
It applies in example, carrier can directly be attached to substrate 20 without the cement layers of any intervention.In one embodiment, carrier material
Material is melted to attach it to substrate.In one embodiment, carrier material is vaporized and condenses on substrate.Pass through painting
Cover lining bottom, carrier encase some or all of surface of substrate, which can be patterned as having prominent and/or recess
Structure.Can be that the product of substrate or film is benefited from during subsequent processing steps and can be vaporized or the branch of sublimable cement
Support, because some in these cements form hard crystalline solid.
In another embodiment, carrier 10 can be made of the permeable material without hole and path.For example, such as poly-
Dimethyl siloxane（PDMS）Material permeable gas.Certainly, other materials can also have this property, and the disclosure
It is not limited to any certain material.
In order to obtain nature described above, permeable carrier 10 can be made of a variety of materials, including paper, aeroge
Or similar material, capillary array, frit and porous polymer.Furthermore, it is possible to promote the hole of transport cement by processing
And/or surface channel and permeable carrier is made in solid material.In general, paper includes fibre bundle, typically cellulose or
Glass.Aeroge, xerogel or by sol-gel process generate other materials be included in removal liquid after leave come from
The texture of the residue of gel-type vehicle.Capillary array includes the one or more for being transmitted in entity and passing through entity
Channel, including wherein channel along material surface and by material surface there is a situation where.Frit includes being sintered together
Particle.It is described in more detail below each in these materials.
Permeable carrier 10 can include not be porous damascene structures.These damascene structures can be used for adjusting
Thermal property, electromagnetic property, fluid properties or the engineering properties of carrier.Selectively added another example is the region of carrier is allowed
The embedded heating element of heat.Another example will be stacked comprising promotion（It can include the group of substrate, cement and carrier
It closes）Cut into the breaking point of small pieces or other branches or embedded feature.
As noted above, paper is the porous fibrous material of liquid permeable and gas.Their fiber, which forms, makes it
It is more compatible than other carrier types, to make its for some application for be ideal in terms of carrier.Paper passes through hair
The ability of capillary action and wicking fluid is also likely to be advantageous for some applications.
Aeroge, xerogel and the other materials by sol-gel process or the generation of class sol-gel process are by mixed
It closes, catalysis and heating chemical product and the porous material that is formed.In entire solidification process, gel sets and drying it is more to be formed
Porous materials.Made of aeroge carrier can be manufactured with several means.
One manufacturing process is each carrier of molding.Aeroge can contain the gradient in terms of hole size and porosity.Ladder
Degree can be sharp, and the large hole in block is advanced to from the aperture near material surface.This gradient has modified aeroge
Capillarity and fluid mobility matter.
Second manufacturing process is described below.Instead of forming each carrier, it is usually to justify that aerogel process, which can be used in creating,
Cylindrical " crystal ingot " provides aspect ratio evenly.Then, after curing, scroll saw or another slice tool can be used
Aeroge crystal ingot is cut into the thin piece of chip, can further be polished Heisei aeroge carrier.
Capillary array is to include by the porous material of many adjacency channels of the block of material, typically via quarter
Erosion, ultrasonic drilling dust or laser directly patterning is formed.In general, hole have can be with unequal inlet diameter and outlet
Diameter, and the shapes and sizes in hole can vary along its length.When hole cross section streamwise keeps uniform enough, this
The permeability of a little materials can be calculated directly according to Darcy's law or Poiseuille's law.
Frit is porous material comprising thin material powder, typically glass, metal, organic or inorganic powder,
It is kept together by binder.Binder is dissolved in solvent.The binder of dissolving and powder are mixed into cream, then cast
Shape.After casting, solvent is dehydrated or otherwise removes to create wet frit.Term is " wet " for indicating
Material is not yet through Overheating Treatment.Then wet frit is heat-treated or is annealed so that binder melts and combines powder
Together at porous material block.Frit can preferably keep its form than aeroge, be usually more readily formed than aeroge
And molding, and can commercially obtain on a large scale.
Finally, polymer and elastomer are the another kind of materials that may be used as permeable carrier.The infiltration of these materials
Rate and rigidity can be adjusted, but their maximum temperature is restricted.
Therefore, term " permeable carrier " refer to allow the cement of liquid or gaseous form by any material.
This permeability can be realized in various ways；Described above is some of them.However, other permeable carriers are also at this
In scope of disclosure.
Substrate 20 can be any suitable material or compound, and can be semi-conducting material.In some embodiments
In, substrate can included patterned micro-structure.In certain embodiments, substrate 20 can be silicon substrate.In processing
The size of preceding substrate 20 can change.In some embodiments, substrate 20 has convenient for manipulating and being not easy to the big of breakage
It is small.For example, in some embodiments, the diameter of substrate 20 before treatment can be about 1 cm.In some embodiments,
Substrate 20 can be much bigger, across tens centimetres of measurements.The thickness of substrate before treatment can be about half millimeter, however it
It can be thicker or thinner.
As shown in Figure 1B, substrate 20 is then attached to carrier 10 using cement 15.The cement 15 can be can vapour
Change or sublimable adhesive or multiple adhesive phases.Term " can vaporize " can be readily transformed into gaseous material for specified
Material.Term " can distil " can be directly translated into gaseous material in the case of no fusing first for specified from solid-state.
In one embodiment, liquid cement is changed into gas phase when being heated, being depressurized or being otherwise stimulated.Another
In embodiment, solid cement is when being heated, being depressurized or being otherwise stimulated by being fused into liquid first then
It evaporates and is changed into gas phase.In another embodiment, solid cement is when being heated, being depressurized or being otherwise stimulated
It is directly sublimed into gas phase.
In the presence of the inhomogeneous cement 15 that can be used for detaching permeable carrier 10 from product, the product can be with
It is substrate 20 or processed substrate, is referred to as film.In the first kind, engagement agent molecule is made by directly distilling or vaporizing
Product is discharged from permeable carrier 10.In the second class, engagement agent molecule is decomposed or is modified in structure a kind of or more
Kind is volatile, can distil or then vaporizable species, the species can partly or entirely vaporize or distil.In third class material
In, engagement agent molecule undergo light-initiated fracture or structural change with formed more easily distil or vaporize with higher vapour pressure
One or more cements.It is described in more detail below each class.
Within the first kind, cement 15 may include the molecule with " core " and side group or " handle "." core " molecule is most aobvious
Material cohesion and standard steam pressure of the ground influence as intermolecular linkage are write, is the vapour pressure at 25 DEG C.Side group or " handle "
Most significantly influence the adhesiveness to carrier and to substrate.Some examples of core molecule are naphthalene or pentacene；And the one of handle molecule
A little examples are hydroxyl or carboxyl.It is of course also possible to use other " core " molecules and " handle ".
The selection of core molecule and side group is the important feature for the cement design for influencing material/process compatibility.Different
Core molecule has different fusing points, solubility, chemical resistance and makes it for the steady stability of various process.Vapour pressure and
Release process therefore is influenced by side group selection to a certain extent；Larger nuclear mass reduces vapour pressure and increases molten
Point.This is shown in FIG. 7, and Fig. 7 compares the fusing point and standard steam pressure of several potential cements.Therefore, the selection of core and handle
At least one of Solvent Solubility, chemical resistance, cohesive force, adhesiveness, fusing point, thermal capacitance and vapour pressure can be optimized.
The flexibility of core molecule and side group system can be used in broadly thinking deeply how to change system with by molecule from low
Vapour pressure, high molecular weight and materials with high melting point are converted to high vapour pressure, low molecular weight material.Here is mechanism as two kinds.
Second class cement include decompose or be modified in structure it is one or more it is volatile, can distil or can vaporize
Those of species.For example, in the case of 1- pyrene carboxylic acids, observe that material distils in the case of substantial vacuum at 206 DEG C, and
And start to smolder in 235 DEG C of atmosphere, wherein its theoretical vapour pressure is 0.56 support, is less than 1 atmospheric pressure.It is believed that the material
The positive experience thermal induction decarboxylation of material, so as to cause pyrene, the species of 1- hydroxyls pyrene, carbon monoxide and carbon dioxide.Pyrene and 1- hydroxyl pyrenes
Corresponding vapour pressure be about 1E4 supports and 9E3 supports at 235 °C, be both more than 1 atm.
Third class includes that the wherein light-initiated fracture of engagement agent molecule experience or construction/configuration changes to be formed in different heating power
Those of the one or more high vapour pressure cements for distilling or vaporizing under the conditions of.
For example, in the case of polymers, being broken using the light of ester bond to weaken polymethyl methacrylate（PMMA）, with
It is allowed preferentially to be removed from the unexposed region of photoresist.Instead, having can the side group of light switching or the molecule of key
It can become easier to distil when using up irradiation or later.This with wherein using light come make material heat and vaporization the case where not
Together；Instead, in the disclosure, the molecular structure of cement changes before vaporization or distillation, this is because retouching herein
The mechanism stated and occur.
In another embodiment, two or more cements 15 may be mixed together.For example, can will have first
First cement of fusing point and the second cement with the second fusing point higher than the first fusing point mix.In mixture
Component can be combined in proportion to create the minimum possible fusing point or eutectic point of the fusing point for being likely lower than the first cement.Fig. 8 shows
How gone out can use the mixture of first cement and the second cement in the processing of substrate.First, such as process 500
Shown, by the first cement and the combination of the second cement to form joint compound mix.This mixture is heated to it
Eutectic point becomes liquid at eutectic point.The eutectic point can be less than the first fusing point, thus reduce during engaging process
It is applied to the heat-induced stress of substrate 20.After mixture fusing, substrate 20 is arrived into engagement of permeable carrier 10 using it,
As shown by process 510.After substrate 20 is joined to permeable carrier 10, the first cement can evaporate, distils, lead to
It crosses and is removed using solvent or otherwise partly eliminated from mixture, it is thus most of to leave the second cement,
As shown by process 520.In other words, the first cement has vapour pressure more lower than the second cement and therefore can
It is removed without removing the second cement.Then it can etch, subtract optionally when substrate 20 is joined to permeable carrier 10
Thin, manipulation stacks, assembles or otherwise handle substrate 20, as shown by process 530.As explained above, this
When, permeable carrier 10 and substrate 20 are mainly bonded together by the second cement.Then by making remaining mixture
Distillation or evaporation can be substrates 20（If not completing processing）Or the product of film is discharged from permeable carrier 10, such as mistake
Shown by journey 540.
One of this method has an advantage that be occurred due to being bonded under lower temperature, so there is smaller answer in substrate
Power.The removal of first cement leaves more steady second cement when substrate optionally undergoes additional treatments.Although eutectic
Point is the known parameters of mixture, but is provided fusing point and unsticking point using a kind of element in it then preferential removal mixture
The ability of decoupling.
In addition, this method can be used in mixture of the design with specific fusing point.In other words, cement can be selected
To realize the fusing point between the eutectic point and maximum fusing point of component cement.In another embodiment, two or more connect
The mixture of mixture can be adjusted to the specific fusing point more than or equal to eutectic point.Some processes will both be benefited from low
Low stress engagement under temperature, while the higher melt of mixture is maintained again.
Joint compound mix another feature is that：Compared with low melting point cement, in fusing, potentially acts as to distil and connect
Mixture and/or higher melt can vaporize the solvent of both cements.For example has it been observed that the pentacene decomposed before melting
It is easy to be dissolved into the naphthalene of fusing.
In addition, joint compound mix also can be used in that product is made to detach from carrier in such a way so that a small amount of
It can vaporize or sublimable residue is left to prevent the sticking action of Van der Waals.Later by evaporation, distillation or its
His cleaning removes the residue.For example, be stacked on receive product on substrate may there are residue, with detached
Those of being used during journey can be easy to distil compared at higher temperature or lower pressure.The cleaning can be able to be
The product of substrate or film be sufficiently engaged with receive substrate after, occur later in processes.
In addition, although Fig. 8 shows the process using two kinds of cements, the present disclosure is not limited to the embodiments.It can also
Combine three or more cements, and in addition, a part as the present invention, it can will be within the above inhomogeneity
Cement is combined.
Cement 15 can be applied to carrier 10 or product in a number of different ways, such as evaporation, spin coating and drop coating.
In another embodiment, sol gel（Sol-gel）It can cure on the product for being pre-coated with cement 15.It can also use
Other technologies, and the other technologies are not limited by the disclosure.
After substrate 20 is attached to carrier 10 using cement 15, cement 15 can solidify.It then can be optional
Ground handles substrate 20.It can be with organic semiconductor device 20 to reduce its thickness.For example, substrate 20 can be ground and be polished to reduce its thickness
Degree, as shown in fig. 2 a.In another embodiment, substrate 20 can be removed to cut film layer from substrate.In another reality
It applies in example, the film of expectation thickness can be formed with etched substrate 20.When thinning process is completed, substrate 20 can have about 300
The thickness of nm, however other sizes are also possible.Substrate 20 can be referred to as film 21 after being thinned.In other embodiment
In, substrate 20 is not processed and remains unaffected in the whole process.
In certain embodiments, if it is desired to, film 21 can be further processed.It is, for example, possible to use lithography and etching
Process on film 21 creates pattern, as illustrated in figure 2 c.The patterning can be used in film 21 creating various types of
Structure, or can be used for film 21 being separated into multiple disjoint parts 22, as illustrated in figure 2 c.For example, substrate can be with
It is further processed to create the micro-structure of pattern or complexity in film or on film.These micro-structures can include electronics, machinery
And photonic device.The type for the micro-structure that can be created is not limited by the disclosure.
Additionally, when film 21 is patterned into its micro-structure, carrier 10 and/or film 21 can also be patterned to
Alignment mark 11 is created, is gone out as illustrated by figures 2 b and 2 c.In this embodiment, alignment mark 11 is created as having relative to film
21 patterned known spatial relationship.These alignment marks 11 are used to make patterned film 21 to be aligned relative to substrate is received,
As described in more detail below.
In another embodiment, alignment mark 11 can be already present on before the processing of product or the patterning of film 21
On carrier 10.In such embodiments, it can be executed to product using pre-existing alignment mark 11 as guidance
Processing or to the patterning of film 21.In other words, patterning executes in such a way, so as to relative to pre-existing pair
11 alignment of fiducial mark note.
Go out as illustrated by figures 2 b and 2 c, alignment mark 11 can be etched into carrier 10.However, in other embodiment
In, alignment mark 11 can be otherwise arranged over the carrier 10, such as relief pattern or as metal pattern.Alignment
Label 11 can also be arranged on disjoint part 22 or be etched into disjoint part 22.
In some embodiments, alignment mark 11 is created at least one direction to be registered to carrier 10
Receive substrate.
Three-dimensional structure is built on receiving substrate.As described below, which can have and be intended to and carrier 10
On alignment mark 11 be aligned alignment mark.
Fig. 3 A show the reception substrate 40 of the stacking 23 with the product being set on it.Substrate 40 is received also to have
There is alignment mark 41, is registered to carrier 10.
Can be that each product of substrate 20 or film 21 is deposited on receives on substrate 40 as in the following manner.First, it uses
Substrate 20 is attached to carrier 10 by cement 15.Then optionally substrate 20 be thinned and handle to create film 21 and at it
It is upper or in which any pattern.In other embodiments, the processing to substrate 20 is not executed.As described above, alignment mark
11 are set over the carrier 10 with the fixation relative to the pattern on film 21 and known spatial relationship.Alignment mark 11 can
To be created during film figure process, or can be pre-existing.
Go out as shown in Figure 3A, carrier 10 is then transported and is arranged near reception substrate 40.In one embodiment
In, carrier 10 and can be that the product of substrate 20 or film 21 is directionally arranged is receiving above substrate 40 downwardly together.Then make
Carrier 10 is registered to alignment mark 11 and 41 and receives substrate 40.As described above, in some embodiments, alignment mark
11 and 41 allow alignment at least one direction.Under this situation, carrier 10 can be in all six degree of freedom
Upper movement, including three translation shafts and two rotary shafts.In other embodiments, alignment can execute on less direction.
For example, in one embodiment, alignment mark 11,41 allows alignment at least one direction.
Alignment can execute in many ways.In some embodiments, using the light for showing to be known in the art those
It learns alignment procedures and carrier 10 is registered to reception substrate 40.It is of course also possible to use other alignment methods.
Then mobile vehicle 10 so that can be the product into contact reception substrate 40 of substrate 20 or film 21.One wherein
Or the stacking 23 of multiple films 21 has been placed in the case of receiving on substrate 40, new film 21 is lowered to existing film
It stacks on 23（Referring to Fig. 3 A）.It is received on substrate 40 although Fig. 3 A show that film 21 is just lowered to, other embodiment is can
Can.For example, carrier 10 can be arranged on the lower section for receiving substrate 40 and be elevated so that film 21 is deposited on reception substrate
On 40.Carrier 10 and receive substrate 40, allow carrier 10 relative to receive substrate 40 position and be aligned so that film 21 can
It is detached from carrier 10 and any orientation being deposited on reception substrate 40 is within the scope of this disclosure.
It can be by optionally using surface to surface contact engagement（So-called van der waals bond）, be followed by improvement film
21 and receive substrate 40 attachment additional heat treatment（Such as hot or laser annealing or quasi- covalent bond are formed）By film 21
It is attached to and receives substrate 40 or stacking 23.In one embodiment, when making the silicon fiml being in contact with each other 21 annealed above be reached at 300 DEG C
When a few minutes, quasi- covalent bond can be formed between contact membranes 21.It in another embodiment, can be using adhesive come by film 21
It is attached to the stacking 23 for receiving substrate 40 or film.In other embodiments, it can be connected in adjacent membranes 21 using solder projection
Access or other metallic conductors.
After film 21 is properly positioned, then cement 15 is removed between film 21 and carrier 10.This can lead to
Heating cement 15 is crossed so that it vaporizes or distils to complete.Alternatively, the pressure that local atmosphere can be reduced, to accelerate vapour
The process changed or distilled.In some embodiments, cement 15 can otherwise be stimulated.It is, for example, possible to use such as light
Electromagnetic radiation come make cement 15 vaporize or accelerate cement 15 distillation.It can use so that cement 15 changes from solid
Cement 15 is removed for any combinations of the mechanism of gas.As depicted in fig. 3b, cement 15 is eliminated so that film 21 and load
Body 10 separates and becomes to be stacked on and receives on substrate 40.Again, although the separation disclosed above for describing film 21, the mistake
Journey is equally applicable to untreated substrate 20.
Hole 12 in carrier 10（Referring to Fig. 5）The gas that vaporization or distillation by cement 15 create is allowed easily to pass
It passs through carrier 10.In the case of no hole 12, the formation of the gas phase of cement 15 is obstructed；The gas of any formation all may be used
It can not be completely removed and keep being trapped between carrier 10 and film 21, this may not be desirable result.
The example of vaporizable cement includes naphthalene, however other cements can be used.
Steam from vaporizable cement 15 may condense and create surface tension, inhibit or make film 21 or
Substrate 20 is more difficult to from separating for carrier 10.Using sublimable adhesive eliminate steam carrier 10 and film 21 or substrate 20 it
Between the possibility that condenses because distillation is the direct conversion from solid to gas.
In some embodiments, sublimable cement can be used.Sublimable cement can be naphthalene, anthracene and four
Benzene or pentacene.In some embodiments, sublimation point can be used to be less than any polycyclic aromatic hydrocarbon of its fusing point.Other cements
Can be sublimable, and the present disclosure is not limited to the above inventories.
Fig. 4 shows the technological process for the establishment for showing 3-D nano, structure.It first, can as shown by process 100
The pending substrate of selection of land is attached to carrier.Using can vaporize or sublimable cement is attached pending substrate.As above
Described in face, pending substrate can be the semiconductor of such as silicon.
After pending substrate is attached to carrier, optionally it is thinned and/or is handled, such as process
Shown by 110.In one embodiment, substrate is ground and is polished so that its thickness is reduced to desired thickness.
It, can be with peeling liner bottom to cut film layer from substrate in another embodiment.It in another embodiment, can be with etched substrate to be formed
The film of expectation thickness.Organic semiconductor device is to form other means of film within the scope of this disclosure.Additionally, it can be further processed
Substrate is to create the micro-structure of pattern or complexity in film or on film.The type of micro-structure can include electronics, machinery and photon
Device, and do not limited by the disclosure.Be performed with created on substrate or film the processing type of pattern and micro-structure not by
The limitation of the disclosure.In certain embodiments, substrate is not processed.In these embodiments, it is convenient to omit process 110.
After substrate is otherwise thinned and/or handles, film can be referred to as.The film passes through in process
The cement that applies in 100 and keep being attached to carrier.Then by the carrier alignment with processed film to substrate is received, such as
Shown by process 120.In order to carry out this, carrier being oriented such that, film is attached to the bottom surface of carrier.Such as institute above
Statement, in other embodiments, receives substrate and be arranged on above carrier, and film is affixed to the top surface of carrier.It can
With any orientation for being attached to carrier using wherein film and being arranged between carrier and reception substrate.
Then carrier is moved to reception substrate proximity.At least one of carrier and reception substrate are relative to another shifting
It is dynamic to be aligned with realizing.Carrier and reception substrate can both contain alignment mark to promote alignment procedures.Vision can be used
System or some other systems execute alignment.
In alignment, carrier is moved towards substrate is received, as shown by process 130.It can use commonly known as
The film for being attached to carrier is attached to the stacking for receiving substrate or film to surface contact engagement by the surface of Van der Waals engagement
The film being previously attached.Permanent adhesive and other adhesivenesses can also be used to promote material during the attach process.Also
It can be using annealing process to allow covalent bond or quasi- covalent bond to be formed in film and receive between substrate or another processed film.
In some embodiments, it is performed both by annealing process after the stacking that each film is added to film.In other embodiments, in heap
It is folded to complete to execute annealing process later.
Between the product for being attached to carrier and reception substrate or in the product for being attached to carrier and on reception substrate
Product between engagement have occurred and that after, then so that cement is changed into gas from solid, as shown by process 140.This
Vaporization or distillation can be relied on.This can be completed using pressure, temperature and/or electromagnetic radiation.Pressure can integrally change
Become, it means that carrier-adhesive-membranous system is enclosed in pressure-reducing chamber, or locally changes, it means that carrier-is viscous
At least part of mixture-membranous system is mounted to pressure-reducing chamber.Temperature can also integrally or locally change.It is in gas now
The cement of body form can be escaped into the hole in carrier and/or be escaped by the hole in carrier, or be escaped into product
Channel and hole in and/or escaped by channel in product and hole, to promote separating for product and carrier.In other implementations
In example, even if carrier may not contain hole, gas is escaped also by carrier.In other embodiments, carrier itself can be by vapour
Change or distillation is fallen.
In one embodiment, then carrier can be re-used for forming a film another substrate processing, allow the mistake for repeating Fig. 4
Journey 100-140.In another embodiment, carrier itself is disposable and is therefore dropped or vaporizes.Although the first product
It can be deposited directly to and receive on substrate, but subsequent product can be deposited on the product being previously attached or nearby, to
Allow to build three-dimensional structure.Annealing process described above can promote adjacent article to mutual engagement.
In certain embodiments, above disclosure describes solid cement, is being heated, is being depressurized or otherwise
It is changed into gas by melting, decomposing or being dissolved into liquid first and then flash to gas phase when being stimulated.
In certain embodiments, for permeable carrier 10 and/or product, having will when cement 15 melts
The cement 15 of liquid, which wicks, to be left the ability in the gap between carrier 10 and product it may be advantageous.The cement 15 of liquid
Can be realized by melting cement, however by another cement of molten state one or more cements it is molten
The decomposition of solution and one or more cements and the liquid that is formed is also possible.Gap between product and carrier 10 is gone
Except a kind of mechanism of cement 15 is to wick into the cement 15 of liquid in carrier 10.This is easy to happen in the case where there：
Gap between product and carrier 10 has the order of magnitude identical with the characteristic length scales of carrier hole or more than carrier hole
Characteristic length scales so that the capillarity of carrier 10 meets or more than the meniscus between carrier 10 and product
（menisci）Surface energy.In other words, when cement 15 is changed into gas, permeable carrier 10 or product can be with
The cement 15 of liquid is entirely or partly wicked to the gap left between carrier 10 and product.The cement 15 of liquid is then
It can evaporate and be transmitted in carrier 10 and/or pass through carrier 10, or be transmitted in product and/or pass through system
Product.
Although known liquid is wicked into permeable carrier, best pore structure is unknown for unsticking
Aobvious.In one embodiment, pore structure has small characteristic length and correspondingly high capillarity, but due to viscosity
Loss and flow velocity is limited.In another embodiment, pore structure length dimension is big, supports higher flow velocity, but capillary
Active force may not enough arrive by force wicking completely and fall cement.In another embodiment, the voidage of carrier is sufficiently high, it is made to fill
Work as collection vessel, enabling cement is made to vaporize or rise in product side due to thermal gradient or pressure gradient in carrier 10
China, and built up in block or along back surface.In another embodiment, pore structure has several length dimensions, to draw
Higher porosity and capillarity are played, it is made to be more suitable for that patterned surface is made to accumulate big product unsticking.In another embodiment
In, carrier is expanded because its pore structure absorbs cement, this allows carrier to deviate product during unsticking process.
If the cement 15 of liquid at least soaks carrier 10 or product, the capillary at least in carrier 10 or product is made
Firmly sufficiently large it can escape at least carrier 10 to draw region of the cement 15 of liquid between product and carrier 10
Hole in or product surface.In enough porositys（The ratio of voidage and total volume）In the case of, carrier 10 or system
Product can be used for storing the most of or whole of the cement 15 of liquid phase.Typical open area score for capillary array is
About 20%.In contrast, the porosity of porous network can be up to 95%, or about five times big.In the first example, institute
The absorber thickness of the carrier needed fully absorbs the carrier thickness needed for the cement to layer thickness, therefore be the second example
In substantially 5 times of thickness.For needing the application of thick-layer cement and thin carrier, it may be desirable to high porosity carrier；For requiring
The application of thin layer cement, capillary array may be enough to collect cement.
In one embodiment, carrier 10 can absorb cement 15 by convection current or diffusion.For example, poly dimethyl silicon
Oxygen alkane（PDMS）Naphtho- and permeable gas can be absorbed.It was found that the PDMS carriers for being joined to silicon substrate are inhaled when cement vaporizes
Cement is received, this causes PDMS to expand away from substrate.After making substrate unsticking, PDMS carriers are cooled down, and cement exists
It becomes visible when curing.Therefore, in this embodiment, carrier serves as the collector of the cement of vaporization.In other words, it engages
In agent vaporization to carrier 10, but not necessarily pass through carrier 10.In addition, carrier can be served as some or all cements
Storage medium.
The liquid of known infiltration porous material may be by the gas occluding of the trapping in hole.This phenomenon is referred to as vapour lock
（vapor lock）.The sucking of liquid is defined as the ratio of the fluid volume in the voidage and porous material of porous material
Rate.Due to the possible block flow of the formation of bubble in hole, it is thus possible to incomplete sucking occur due to vapour lock.It may use
Cement is come to improve sucking in the presence of vapour lock not be apparent.In one embodiment, the liter of the cement 15 in hole
China, vaporization and/or decomposition generate the bubble with meniscus.With the growth of bubble, meniscus can contact hole wall, adhesion
Hole wall simultaneously hinders to flow.Meniscus can be divided into upstream meniscus and downstream meniscus.Referred to as Gibbs-Marangoni effects,
Upstream meniscus is in different temperature and therefore different surface energies compared with the meniscus of downstream, and statistically,
Ratio occurs more to condense at the meniscus of upstream at the meniscus of downstream.This causes cement transmission by bubble, to prevent
Vapour lock.
Compared with the transmission purely driven by Darcy's law, cement 15 is being transferred to carrier by the wetting property of carrier 10
In aspect can play the role of prior, which describes flow velocity of the fluid by porous material.Aeroge or
The result of different hole sizes in xerogel is that nano-pore will more strongly wick material compared with micropore.Although aeroge carries
Body may not support the larger flow velocity by the material, but it flows into the caused surface tension of capillary array with fluid
Compared to the capillarity of the notable bigger of presentation, and it usually can support larger porosity.Although two kinds of equal energy of pore structure
Enough transmit liquid vaporizes cement, but in some embodiments, sol-gel can be beneficial, because it can
Containing more cements and cement will be absorbed with the power of bigger.
Therefore, it is possible to use various carriers come keep, collect and store condensation or curdled appearance cement 15.At these
In embodiment, when cement 15 is transferred in permeable carrier 10（Herein, the hole in carrier 10 is occupied）When, cement
15 will partly or entirely melt, will evaporate, will vaporize, decompose or distil.Since substrate 20 is remained to load almost without surface tension
Body 10, so this transmission in cement 15 to carrier ensures that substrate 20 is detached from the low stress of carrier 10.In other words,
Since liquid cement core is sucked away from out substrate 20, so substrate 20 can be detached easily from carrier 10.
In certain embodiments, after in the hole that cement 15 has been transferred into permeable carrier 10, cement
15 vaporizations, evaporation, distillation decompose and can pass through carrier 10.In other embodiments, cement 15 can be with gas
Phase, liquid phase or solid phase, which are retained in the hole of permeable carrier 10, reaches the longer duration.
In this way, vaporizable cement can be used together with the flow chart of Fig. 4, and wherein process 140 includes and connects
Mixture is transferred to the intermediate change of its liquid, wherein liquid in carrier.
As described above, pass through the temperature for increasing ambient enviroment, the pressure or both for reducing the environment, or part
Ground or integrally, can be such that cement vaporizes.This make cement first its be exposed to ambient enviroment outer surface vaporize.With
The vaporization of those outer surfaces, which continues.
The scope of the present disclosure is not limited by specific embodiment described herein.In fact, in addition to described herein
Except embodiment, according to foregoing description and attached drawing, other various embodiments of the disclosure and to the modification of the disclosure for ability
It will be apparent for the those of ordinary skill in domain.Therefore, such other embodiment and modification are intended to fall within the model of the disclosure
In enclosing.In addition, although being described in certain circumstances, under the background of specific implementation for specific purpose herein
The disclosure, but it will be appreciated by those of ordinary skill in the art that its serviceability is without being limited thereto, and the disclosure can valuably for
Any amount of purpose is realized in any amount of environment.Therefore, it should consider the complete of the disclosure as described herein
The situation of whole range and spirit gets off to explain claims set forth below.
Claims (20)
1. a kind of method detaching the product that carrier is attached to using cement, including：
The cement is set to be changed into liquid from solid；And
Liquid core is sucked away from out the gap between the carrier and the product, to discharge the product from the carrier.
2. according to the method described in claim 1, wherein, the carrier is permeable.
3. according to the method described in claim 2, wherein, the cement changes via at least one of decomposition or fusing
For liquid.
4. according to the method described in claim 2, wherein, the cement of liquid is stored at least partially in permeable load
In vivo.
5. according to the method described in claim 2, wherein, the cement of liquid is changed into gas, and pass through it is described can
The carrier of infiltration.
6. according to the method described in claim 2, wherein, the cement of liquid is changed into gas, and in the gas extremely
Some are accumulated in at least one of its liquid or solid-state in permeable carrier less.
7. according to the method described in claim 1, wherein, the cement of liquid is changed into gas.
8. a kind of method of Separation Product, including：
By via increase the partly or wholly temperature of atmosphere or reduce that its pressure makes cement be changed from solid by from
The cement discharges the product.
9. according to the method described in claim 8, wherein, the cement is vaporizable or sublimable.
10. according to the method described in claim 9, wherein, the cement includes having one or more cores and one or more
The molecule of a handle, to optimize in Solvent Solubility, chemical resistance, cohesive force, adhesiveness, fusing point, thermal capacitance and vapour pressure at least
One.
11. according to the method described in claim 9, wherein, the cement is decomposed or is modified in structure a kind of or more
Kind can distil or vaporizable species.
12. according to the method described in claim 9, wherein, the light-initiated fracture of the cement experience or structural change at
One or more reagents of higher vapor pressure.
13. according to the method described in claim 8, wherein, the product is attached to carrier by the cement.
14. according to the method for claim 13, wherein the carrier is permeable.
15. according to the method for claim 14, wherein permeable carrier include aeroge, xerogel or from
At least one of the other materials that sol gel generates.
16. according to the method for claim 14, wherein permeable carrier include capillary array, frit or
At least one of porous fibrous material.
17. according to the method for claim 14, wherein permeable carrier is including being not porous embedded junction
Structure.
18. according to the method for claim 17, wherein the damascene structures adjust permeable carrier heat,
Electromagnetism, fluid or engineering properties.
19. a kind of method of processing substrate to form film, including：
The first cement with the first fusing point and the second junction with the second fusing point higher than first fusing point are mixed
It is combined to form joint compound mix；
Melt the joint compound mix；
Carrier is bonded to the substrate using the joint compound mix of fusing；
Make the first cement evaporation, distil or otherwise removed from the joint compound mix, leaves second and connect
Mixture；
, after removing first cement in the joint compound mix, processing substrate is to form film；And
Joint compound mix is set to distil or evaporate to remove the film from the carrier after such treatment.
20. according to the method for claim 19, wherein the temperature that the engagement occurs is molten less than any ingredient of mixture
The temperature of change.
Applications Claiming Priority (7)
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| US201562238930P | 2015-10-08 | 2015-10-08 | |
| US62/238764 | 2015-10-08 | ||
| US62/238930 | 2015-10-08 | ||
| US15/161646 | 2016-05-23 | ||
| US15/161,646 US10046550B2 (en) | 2013-08-22 | 2016-05-23 | Carrier-substrate adhesive system |
| PCT/US2016/053719 WO2017062202A1 (en) | 2015-10-08 | 2016-09-26 | Carrier-substrate adhesive system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108290321A true CN108290321A (en) | 2018-07-17 |
Family
ID=58488354
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| CN201680072220.2A Pending CN108290321A (en) | 2015-10-08 | 2016-09-26 | Carrier-substrate adhesive systems |
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| EP (1) | EP3359364A1 (en) |
| JP (1) | JP2018532850A (en) |
| KR (1) | KR20180067550A (en) |
| CN (1) | CN108290321A (en) |
| WO (1) | WO2017062202A1 (en) |
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| CN114050172A (en) * | 2021-05-10 | 2022-02-15 | 友达光电股份有限公司 | Light emitting device and method for transferring light emitting chips in large quantities |
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| Publication number | Publication date |
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| JP2018532850A (en) | 2018-11-08 |
| WO2017062202A1 (en) | 2017-04-13 |
| EP3359364A1 (en) | 2018-08-15 |
| KR20180067550A (en) | 2018-06-20 |
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