CN108287418A - A kind of automatically controlled modulator of THz wave - Google Patents
A kind of automatically controlled modulator of THz wave Download PDFInfo
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- CN108287418A CN108287418A CN201810145037.1A CN201810145037A CN108287418A CN 108287418 A CN108287418 A CN 108287418A CN 201810145037 A CN201810145037 A CN 201810145037A CN 108287418 A CN108287418 A CN 108287418A
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- vanadium dioxide
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention provides a kind of automatically controlled modulators of THz wave, including：Substrate layer and multiple rows of metal micro structure array；The metal micro structure array includes the conductiving metal strip for being set to substrate layer surface and multiple metal frames, and the metal frame is arranged along the conductiving metal strip length direction, and the conductiving metal strip forms closed pattern with the metal frame；The metal frame is at least made of two sections of heat-conducting metal items, and the heat-conducting metal item is connected by vanadium dioxide particles block.The present invention controls the metal-insulator phase transformation of particle vanadium dioxide by impressed current, that is, regulates and controls the conductivity of vanadium dioxide particles block, to change the resonant frequency of metal micro structure, realizes efficient, the quick regulation and control to THz wave intensity in transmission.
Description
Technical field
The present invention relates to Terahertz function element field more particularly to it is a kind of based on metal-vanadium dioxide micro-structure too
The automatically controlled modulator of Hertz wave.
Background technology
Active control electromagnetic wave amplitude device is many electromagnetic waves such as microwave, Terahertz, mid and far infrared and optical-fibre communications
Very important device in section.Terahertz wave band (0.1-10THz) is to apply a kind of wider electromagnetic wave band, this is because naturally
Material is weaker to the response of THz wave, therefore often manipulates THz wave using the Meta Materials of artificial cycle structure.In order to
Realize the active control of THz wave, researcher is Meta Materials and some regulatable materials such as graphene, vanadium dioxide etc.
Combine regulation and control THz wave.
Vanadium dioxide is a kind of phase-change material haveing excellent performance, and at 68 DEG C or so, there is from insulation state to metallic state
First order phase change.Corresponding to Terahertz wave spectrum, be from insulation state when high transmittance be changed into the low transmission of metallic state；And phase
Change process is reversible, i.e., when temperature is reduced to low temperature from high temperature, vanadium dioxide can be then changed into insulation state by metallic state.Meanwhile it is logical
Overcurrent heating also can induce vanadium dioxide and undergo phase transition.
Existing metal and vanadium dioxide composite construction for regulating and controlling THz wave intensity is all based on metal micro structure
And vanadium dioxide film, therefore by electric current to vanadium dioxide heat generate phase transformation when, what is consumed is more powerful, and modulate speed
Degree is very slow.
Invention content
Present invention solves the technical problem that being to provide a kind of automatically controlled modulator of THz wave, Terahertz provided by the present application
The automatically controlled modulator of wave can carry out THz wave the amplitude modulation of frequency selectivity, and with smaller power consumption and high modulation speed
Degree.
In view of this, this application provides a kind of automatically controlled modulators of THz wave, including：
Substrate layer and multiple rows of metal micro structure array；
The metal micro structure array includes the conductiving metal strip for being set to substrate layer surface and multiple metal frames, the gold
Belong to frame along the conductiving metal strip length direction to be arranged, the conductiving metal strip forms closed pattern with the metal frame；
The metal frame is at least made of two sections of heat-conducting metal items, and the heat-conducting metal item is connected by vanadium dioxide particles block
It connects.
Preferably, the metal frame is made of three sections of heat-conducting metal items, and three sections of heat-conducting metal items are 2 bullions
Item and 1 U-shaped metal strip.
Preferably, the closed pattern is rectangular or square.
Preferably, the metal frame is made of three sections of heat-conducting metal items, and three sections of heat-conducting metal items are 2 length differences
The bullion item being oppositely arranged and 1 U-shaped metal strip.
Preferably, the thickness of the substrate layer is 100 μm~1mm, and the thickness of the metal micro structure array is more than or equal to
The thickness of 100nm, the vanadium dioxide particles block are more than or equal to 90nm.
Preferably, the vanadium dioxide particles block is monocrystalline vanadium dioxide block or polycrystalline vanadium dioxide.
Preferably, the metal material of the metal micro structure array is gold, silver or aluminium.
Preferably, the substrate layer is transparency material, the material of the substrate layer in 100Ghz~10THz frequency ranges
For silicon or aluminium oxide.
Preferably, the metal micro structure array is uniformly arranged, and the metal frame is uniformly arranged.
Preferably, further include electrode, lead, conductive coil and the Constant Electric Current for applying electric current to the metal micro structure array
Stream source.
This application provides a kind of automatically controlled modulators of THz wave, by metal micro structure array and vanadium dioxide particles block
It combines, this kind of structure plays the role of providing electromagentic resonance simultaneously and connect impressed current two greatly, has reached outer power-up
The purpose introduced is flowed, the electric current of introducing heats particle vanadium dioxide and it is made to generate phase transformation, thus the device can pass through control
The intensity of electric current processed controls vanadium dioxide particles phase transition process, and then realizes the active tune to different frequency THz wave amplitude
It saves, the energy consumption needed for vanadium dioxide particles phase transformation is less；On the other hand, the adjusting based on electric current, the tune to compare through temperature
Section, there is more flexible and convenient frequency regulation characteristics, in Terahertz frequency range, can carry out frequency selectivity to electromagnetic wave
Amplitude modulation.
Description of the drawings
Fig. 1 is the structural schematic diagram of the automatically controlled modulator of THz wave of the present invention；
Fig. 2 is the cellular construction schematic diagram of the automatically controlled modulator of THz wave of the present invention；
Fig. 3 is the structural schematic diagram that the present invention is the automatically controlled modulator of 1 THz wave of embodiment；
Fig. 4 is the transmitance frequency spectrum of the automatically controlled modulator of 1 THz wave of the embodiment of the present invention；
Fig. 5 is the modulation range and modulation depth curve graph of the automatically controlled modulator of 1 THz wave of the embodiment of the present invention；
Fig. 6 is time of the automatically controlled modulator of 1 THz wave of the embodiment of the present invention in the intensity in transmission outside plus under square wave current
Response curve.
Specific implementation mode
For a further understanding of the present invention, the preferred embodiment of the invention is described with reference to embodiment, still
It should be appreciated that these descriptions are only the feature and advantage further illustrated the present invention, rather than to the claims in the present invention
Limitation.
The composite construction of the metal and vanadium dioxide of the automatically controlled modulator of THz wave in the prior art is micro- based on metal
Structure and vanadium dioxide film, it is higher that this kind of modulator vanadium dioxide undergoes phase transition consumed power, and modulating speed is very slow；
For the problem, this application provides a kind of automatically controlled tune of THz wave based on metal micro structure array Yu vanadium dioxide micro-structure
Device processed can carry out THz wave the amplitude modulation of frequency selectivity, and with preferable power consumption and higher modulation speed
Degree.Specifically, the automatically controlled modulator of THz wave provided by the present application includes：
Substrate layer and multiple rows of metal micro structure array；
The metal micro structure array includes the conductiving metal strip for being set to substrate layer surface and multiple metal frames, the gold
Belong to frame along the conductiving metal strip length direction to be arranged, the conductiving metal strip forms closed pattern with the metal frame；
The metal frame is at least made of two sections of heat-conducting metal items, and the heat-conducting metal item is connected by vanadium dioxide particles block
It connects.
In the above-mentioned automatically controlled modulator of THz wave provided by the present application, the micro-structure refers to thickness within 1 μm, one
Each structural parameters of a structural unit are in the range of tens to hundreds of microns；Array refers to a structural unit in x/y plane
Interior continuous expansion.The application builds the array of metal and vanadium dioxide composite microstructure, is to make the structure institute of last entirety
The area accounted for is more than the wave surface of THz wave, i.e., so that Terahertz is passed through from this array completely；Because the structure of structure is to too
The regulation and control of Hertz wave are the effects of an entirety, and not being a structural unit can realize, need it is sufficiently large, theoretically
The collective effect of the structural unit of unlimited periodic arrangement.And when the gross area of micro structure array is more than the wave surface of THz wave
When, the effect of generation is just close to the structural unit with unlimited periodic arrangement.
In the application, the substrate layer is substrate layer well known to those skilled in the art, and exemplary, the substrate layer exists
It is transparency material in 100Ghz~10THz frequency ranges, material includes but are not limited to titanium dioxide, mica, silicon or oxidation
Aluminium.The thickness of the substrate layer is 100 μm~1mm, and in a particular embodiment, the thickness of the substrate layer is 300~800 μm.
The substrate layer surface is provided with multiple rows of metal micro structure array, in a particular embodiment, the micro- knot of metal
Structure array is uniformly arranged on the substrate layer.Specifically, the metal micro structure array includes being set to substrate layer surface
Conductiving metal strip and multiple metal frames, the metal frame are arranged along the conductiving metal strip length direction, the conductive metal
Item forms closed pattern with the metal frame.In this application, the number for the metal frame being arranged on the conductiving metal strip can root
It needs to be arranged according to practical application, the setting direction of the metal frame is preferably placed at the same side of metal strip, and the metal frame is preferred
The size for being uniformly arranged the i.e. described metal frame is preferably consistent.
In this application, the metal frame is at least made of two sections of heat-conducting metal items, and the heat-conducting metal item passes through dioxy
Change the connection of vanadium corpuscular eclipse.In this application, the metal frame can be made of two sections of heat-conducting metal items, can also be by three sections of heat conduction
Metal strip forms, and the number of the heat-conducting metal item determines that then the number of the vanadium dioxide particles block also determines that.
In certain specific embodiments, the metal frame is made of three sections of heat-conducting metal items, and three sections of heat-conducting metal items are 2 bar shaped gold
Belong to item and 1 U-shaped metal strip.
In certain specific embodiments, the metal frame is made of three sections of heat-conducting metal items, three sections of heat-conducting metal items
For the different bullion item being oppositely arranged of 2 length and 1 U-shaped metal strip；The automatically controlled modulator of this kind of Terahertz it is simple
Structural schematic diagram is as shown in Figure 1 and Figure 2, and 1 is metal micro structure array in figure, and 2 be vanadium dioxide particles block, and 3 be substrate layer.
In the application, the vanadium dioxide particles block can only be connect with heat-conducting metal item, and cannot be connect with conductiving metal strip, otherwise can
It causes to open a way, it can not electrified regulation.
In this application, thickness >=100nm of the metal micro structure array, in certain specific embodiments, the gold
The thickness for belonging to micro structure array is 150~300nm；Thickness >=90nm of the vanadium dioxide particles block, in certain specific implementations
In example, the thickness of the vanadium dioxide particles block is 100~200nm.The vanadium dioxide particles vanadium dioxide in the block is single
Brilliant or polycrystalline.
Further include in the herein described automatically controlled modulator of THz wave left and right electrode, lead, conductive coil, encapsulating structure,
Any external structure that may be needed such as continuous current source, external structure is well known to those skilled in the art, to this application
The setting and connection relation of external structure are not particularly limited.
The above-mentioned automatically controlled modulator of THz wave is prepared in the following way：On substrate layer, pass through molecular beam epitaxy
The vanadium dioxide monocrystal thin films of technology or pulsed laser deposition technology growth a layer thickness in 90nm or more；Then by ultraviolet
It is arrays of microparticles that photoetching technique and reactive ion etching technology, which etch vanadium dioxide film,；Finally by secondary set lithography
And electron beam evaporation deposition technology, by the metal micro-nano resonant structure array of 100nm or more and vanadium dioxide particles array junctions
It closes.
Fig. 1 is the structural schematic diagram of a specific embodiment of the automatically controlled modulator of THz wave of the present invention, and Fig. 2 is invention one
The cellular construction schematic diagram of a specific embodiment.In wherein Fig. 11 be metal micro structure array, 2 be vanadium dioxide particles block, 3
For substrate layer.For this kind of modulator, when obstructed electric current or smaller electric current, temperature in phase transition temperature of vanadium dioxide hereinafter,
Vanadium dioxide is in insulation state, and heat-conducting metal frame is an asymmetrical split ring, and there are a formants；When increase electric current
When, make temperature more than phase transition temperature of vanadium dioxide, vanadium dioxide particles block is in metallic state, heat-conducting metal frame and dioxy at this time
Change vanadium particle and constitute a silent ring, THz wave can then be moved through the resonant positions of spectrum, be utilized such structure
Design realizes transformation of the THz wave through spectrum formant of current control.
In the automatically controlled modulator of practical application THz wave provided by the present application, constant-current source is applied to gold by left and right electrode
Belong to micro structure array, by electric current to METAL HEATING PROCESS, and metal leads to heat transfer and contacts the heat to vanadium dioxide particles, makes dioxy
Change thus phase transformation that vanadium heating controls vanadium dioxide；By the size for adjusting electric current, you can control the metal-insulator of vanadium dioxide
The process of phase transformation, therefore the conductivity of vanadium dioxide particles can be adjusted, so as to control the transmitance of THz wave.
For a further understanding of the present invention, with reference to embodiment to the automatically controlled modulator of THz wave provided by the invention into
Row is described in detail, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
The structural schematic diagram of the automatically controlled modulator of the present embodiment THz wave is as shown in figure 3, the wherein automatically controlled modulation of THz wave
Shown in 3D structures such as Fig. 3 (a) of device, upper layer is metal micro structure array and vanadium dioxide particles array composite construction, and lower layer is
Substrate layer；Wherein vanadium dioxide thickness is 100nm, and Au thickness is 150nm, and 500 μm of substrate layer thickness, substrate layer material is three oxygen
Change two aluminium；The external constant-current source of two electrodes in left and right.Fig. 3 (b) is that metal micro structure array and vanadium dioxide particles array are compound
The details of structure, wherein：P=100 μm, a=70 μm, b=54 μm, gap=3 μm, d=20 μm (d is two vanadium dioxide particles
The distance of the center of block in vertical direction).
Fig. 4 is the result data figure of the experiment test of the automatically controlled modulator of THz wave provided in this embodiment, wherein five
It is corresponding THz wave under electric current 0A through spectrum that curve, which represents and is passed through different electric current ■ curves, ● curve is electric current 0.58A
Under corresponding THz wave through spectrum, ★ curves be under electric current 0.62A corresponding THz wave through spectrum,For electric current 0.64A
Under corresponding THz wave through spectrum, ◆ curve be under electric current 0.70A corresponding THz wave through spectrum；As shown in Figure 4, work as electricity
For stream in 0A, i.e., when vanadium dioxide is in insulation state, through spectrum, there are formants at 0.864THz, and when electric current increases to arriving
When 0.7A, i.e., when vanadium dioxide is in metallic state, red had been moved at 0.63THz through the formant of spectrum.
Fig. 5 is the analysis result of the experiment test of the automatically controlled modulator of THz wave provided in this embodiment；Fig. 5 (a) is too
The resonant frequency of hertz transmission spectrum with impressed current value change curve, as seen from the figure, before 0.45A, resonant frequency
To change, i.e. the temperature of vanadium dioxide is not up to transformation temperature before 0.45A；After 0.45A, phase takes place in vanadium dioxide
Become.To after 0.7A, resonant frequency also no longer changes, i.e. vanadium dioxide mutually changes to metallic state completely when 0.7A.Fig. 5 (b)
In ▲ curve be 0.864THz resonant positions modulation depth with impressed current change curve, ● curve 0.63THz
The modulation depth of resonant positions with impressed current change curve, as seen from the figure, when electric current reaches 0.7A, modulation depth
Reach maximum, at this point, it is 54% that the modulation depth at 0.864THz, which is modulation depth at 36%, 0.63THz,.
Fig. 6 is that the automatically controlled modulator of the present embodiment THz wave is bent in the time response of the intensity in transmission outside plus under square wave current
Line chart, as seen from the figure, the automatically controlled modulator of THz wave provided in this embodiment can complete transmission wave modulation in several seconds.
The explanation of above example is only intended to facilitate the understanding of the method and its core concept of the invention.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvements and modifications, these improvement and modification are also fallen within the protection scope of the claims of the present invention.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (10)
1. a kind of automatically controlled modulator of THz wave, which is characterized in that including：
Substrate layer and multiple rows of metal micro structure array；
The metal micro structure array includes the conductiving metal strip for being set to substrate layer surface and multiple metal frames, the metal frame
It is arranged along the conductiving metal strip length direction, the conductiving metal strip forms closed pattern with the metal frame；
The metal frame is at least made of two sections of heat-conducting metal items, and the heat-conducting metal item is connected by vanadium dioxide particles block.
2. the automatically controlled modulator of THz wave according to claim 1, which is characterized in that the metal frame is by three sections of heat conduction gold
Belong to item composition, three sections of heat-conducting metal items are 2 bar shaped metal strips and 1 U-shaped metal strip.
3. the automatically controlled modulator of THz wave according to claim 1 or 2, which is characterized in that the closed pattern is rectangle
Or square.
4. the automatically controlled modulator of THz wave according to claim 1, which is characterized in that the metal frame is by three sections of heat conduction gold
Belong to item composition, three sections of heat-conducting metal items are the different bullion items being oppositely arranged and 1 U-shaped metal strip of 2 length.
5. the automatically controlled modulator of THz wave according to claim 1,2 or 4, which is characterized in that the thickness of the substrate layer
Thickness for 100 μm~1mm, the metal micro structure array is more than or equal to 100nm, and the thickness of the vanadium dioxide particles block is big
In equal to 90nm.
6. the automatically controlled modulator of THz wave according to claim 1,2 or 4, which is characterized in that the vanadium dioxide particles
Block is monocrystalline vanadium dioxide block or polycrystalline vanadium dioxide.
7. the automatically controlled modulator of THz wave according to claim 1,2 or 4, which is characterized in that the metal micro structure battle array
The metal material of row is gold, silver or aluminium.
8. the automatically controlled modulator of THz wave according to claim 1,2 or 4, which is characterized in that the substrate layer exists
It is transparency material in 100Ghz~10THz frequency ranges, the material of the substrate layer is silicon or aluminium oxide.
9. the automatically controlled modulator of THz wave according to claim 1,2 or 4, which is characterized in that the metal micro structure battle array
Row are uniformly arranged, and the metal frame is uniformly arranged.
10. the automatically controlled modulator of THz wave according to claim 1,2 or 4, which is characterized in that further include to the metal
Micro structure array applies electrode, lead, conductive coil and the continuous current source of electric current.
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Cited By (10)
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|---|---|---|---|---|
| CN110133759A (en) * | 2019-04-23 | 2019-08-16 | 电子科技大学 | One kind being based on VO2Dynamic Terahertz super lens |
| TWI673554B (en) * | 2018-08-22 | 2019-10-01 | 國立清華大學 | Liquid crystal photoelectric apparatus and optical imaging processing system |
| CN110426867A (en) * | 2019-07-31 | 2019-11-08 | 电子科技大学 | A kind of broadband Terahertz modulator based on gradual change opening |
| CN110488509A (en) * | 2019-07-31 | 2019-11-22 | 电子科技大学 | A kind of dynamic control super surface device of Terahertz based on vanadium dioxide |
| CN110515223A (en) * | 2019-07-31 | 2019-11-29 | 电子科技大学 | A kind of Terahertz dynamic phase modulation device based on vanadium dioxide |
| CN110911850A (en) * | 2019-11-29 | 2020-03-24 | 中国人民解放军空军工程大学 | Wave-absorbing characteristic regulation and control method for regulating local strain of flexible metamaterial film |
| CN111910154A (en) * | 2020-07-29 | 2020-11-10 | 华中科技大学 | Dynamic frequency selection surface structure and preparation method thereof |
| CN111928781A (en) * | 2020-06-22 | 2020-11-13 | 成都信息工程大学 | Gus Hansen displacement-based regulation and control device and regulation and control method |
| CN112882259A (en) * | 2021-01-13 | 2021-06-01 | 天津大学 | Vanadium dioxide-based adjustable reflection-type terahertz polarization converter |
| CN113451719A (en) * | 2021-03-22 | 2021-09-28 | 电子科技大学 | Design of dual electrical regulation super-surface switch filter |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI673554B (en) * | 2018-08-22 | 2019-10-01 | 國立清華大學 | Liquid crystal photoelectric apparatus and optical imaging processing system |
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| CN110133759B (en) * | 2019-04-23 | 2020-06-16 | 电子科技大学 | Based on VO2Dynamic terahertz superlens |
| CN110133759A (en) * | 2019-04-23 | 2019-08-16 | 电子科技大学 | One kind being based on VO2Dynamic Terahertz super lens |
| CN110488509B (en) * | 2019-07-31 | 2020-08-11 | 电子科技大学 | Vanadium dioxide-based dynamic control terahertz super-surface device |
| CN110515223A (en) * | 2019-07-31 | 2019-11-29 | 电子科技大学 | A kind of Terahertz dynamic phase modulation device based on vanadium dioxide |
| CN110488509A (en) * | 2019-07-31 | 2019-11-22 | 电子科技大学 | A kind of dynamic control super surface device of Terahertz based on vanadium dioxide |
| CN110426867A (en) * | 2019-07-31 | 2019-11-08 | 电子科技大学 | A kind of broadband Terahertz modulator based on gradual change opening |
| CN110515223B (en) * | 2019-07-31 | 2020-08-11 | 电子科技大学 | Vanadium dioxide-based terahertz dynamic phase modulator |
| CN110426867B (en) * | 2019-07-31 | 2020-09-25 | 电子科技大学 | Broadband terahertz modulator based on gradual change opening |
| CN110911850A (en) * | 2019-11-29 | 2020-03-24 | 中国人民解放军空军工程大学 | Wave-absorbing characteristic regulation and control method for regulating local strain of flexible metamaterial film |
| CN111928781A (en) * | 2020-06-22 | 2020-11-13 | 成都信息工程大学 | Gus Hansen displacement-based regulation and control device and regulation and control method |
| CN111910154A (en) * | 2020-07-29 | 2020-11-10 | 华中科技大学 | Dynamic frequency selection surface structure and preparation method thereof |
| CN111910154B (en) * | 2020-07-29 | 2022-08-02 | 华中科技大学 | Dynamic frequency selection surface structure and preparation method thereof |
| CN112882259A (en) * | 2021-01-13 | 2021-06-01 | 天津大学 | Vanadium dioxide-based adjustable reflection-type terahertz polarization converter |
| CN113451719A (en) * | 2021-03-22 | 2021-09-28 | 电子科技大学 | Design of dual electrical regulation super-surface switch filter |
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