CN108286073A - A kind of method of original position optics gas phase super-saturation precipitation method fast-growth ultra-thin-wall Zinc oxide single crystal micron tube - Google Patents
A kind of method of original position optics gas phase super-saturation precipitation method fast-growth ultra-thin-wall Zinc oxide single crystal micron tube Download PDFInfo
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- CN108286073A CN108286073A CN201810046007.5A CN201810046007A CN108286073A CN 108286073 A CN108286073 A CN 108286073A CN 201810046007 A CN201810046007 A CN 201810046007A CN 108286073 A CN108286073 A CN 108286073A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
Abstract
The present invention relates to a kind of methods of optics gas phase super-saturation precipitation method fast-growth ultra-thin-wall Zinc oxide single crystal micron tube in situ, belong to semi-conducting material preparation field.Include the following steps：Prepare the uniform ZnO powders of particle size；ZnO powders are put into and obtain fine and close biscuit rod under 70MPa isostatic presseds；Plain embryo stick one end is worn into coniform and is installed at the stove halogen lamp focusing of optics floating region, plain embryo material stick optics pre-burning, 1200 2400W of pre-burning power, burn-in time 26 hours are directly carried out；The growth that halogen lamp power carries out zinc oxide micrometer pipe is improved after the completion of pre-burning, growth power is 3600 4200W, growth time is 8 10 hours, it obtains pattern completely and there is the ultra-thin-wall Zinc oxide single crystal micron tube of regular hexagon geometry, its wall thickness is most thin can to reach~450nm, diameter~230 μm.The method of the present invention can fast-growth high-quality ultra-thin wall Zinc oxide single crystal micron tube realize prepared by structural semiconductor, there is potential application in Photoelectric Detection and microcavity laser output field.
Description
It is hard that Yan Yinzhou sparkles roc Wang Yue Wang Qiang Xing Cheng Jiang Yi recklessly
Technical field
The invention belongs to technical field of semiconductor material preparation, pass through optics gas phase super-saturation precipitation method fast-growth in situ
High-quality ultra-thin wall Zinc oxide single crystal micron tube.
Background technology
ZnO represents material as II-VI group broad stopband oxide semiconductor, and energy gap is about 3.37eV under room temperature, swashs
Sub- binding energy is about 60meV, in UV/blue LED, ultraviolet laser luminescent device, ultraviolet solar blind light electric explorer, electrically conducting transparent
Oxide electrode, solar cell, gas sensor, the fields such as field-effect transistor have important application.Recent study
It was found that zinc oxide can prepare place's micron tubular structure, section is regular hexagon, is that a kind of potential Low threshold ultraviolet laser is micro-
Chamber, compared to traditional enamel amber chamber, the optical-waveguide-type optics Whispering-gallery-mode of micron tube structural support has higher quality factor
With smaller mode volume, it can be achieved that ultralow threshold value ultraviolet laser lasing, the research and development that ultraviolet laser micrometer is integrated on piece are established
Basis is determined.
Realization Zinc oxide single crystal micron tube, which is grown, mainly hydro-thermal method, chemical vapour deposition technique, microwave heating method etc., wherein
Jiabiao Lian et al. are using hydro-thermal method (Template-free hydrothermal synthesis of hexagonal
ZnO micro-cups and micro-rings assembled by nanoparticles.Crystengcomm.2011,
13 (15), 4822) grown the micron tube of zinc oxide, growth course carries out at a temperature of less than 100 DEG C, reaction temperature compared with
It is low, but step is complicated, relatively high for the acid-base value of solution, temperature requirement, the reaction time needs 15-20 hours, Er Qieyou
In the influence of catalyst and solution, impurity is inevitably introduced in growth, and the diameter of micron tube is usual<40 μm, crystalline
Amount is general poor.Youguo Yan et al. use chemical vapour deposition technique (A feasible route to prepare
hollow ZnO microtube via modulating reagent's vapor pressure and growth
Temperature.Journal of Materials Research.2013,28 (6), 897-904) utilize high-purity Zn,
ZnO and C powder generates high Zn vapour pressures in the heating of tube furnace high temperature, and then Zn atomic depositions are on a silicon substrate and and O2Instead
ZnO micron tubes should be grown, the zinc oxide micrometer pipe size finally grown is smaller and homogeneity is bad, and the length of micron tube is
100-300 μm, a diameter of 5-20 μm.Jiping Cheng et al. have gone out the micron of zinc oxide by microwave heating method successful growth
Pipe (Zinc oxide single-crystal microtubes.Applied Physics Letters.2004,85 (22),
5140-5142), a ceramics ZnO shell is first prepared first, and oxygen is gone out by the method deposition growing of microwave heating inside the housing
Change zinc micron tube, but preliminary preparation is excessively complicated, the structure of ZnO shells is very difficult.
Skill is precipitated by revolving burner pre-burning zinc oxide ceramics stick combination optics gas phase supersaturation in nearest Qiang Wang et al.
Art (A novel ultra-thin-walled ZnO microtube cavity supporting multiple optical
modes for bluish-violet photoluminescence,low-threshold ultraviolet lasing
And microfluidic photodegradation.NPG Asia Materials.2017,9 (10), 442) successful growth
Go out structural integrity and the zinc oxide in large size monocrystalline micron tube of 50-100 μm of diameter, micron thickness of pipe wall is at 1 μm or so, but the party
The entire growth time of method growth is more than 30 hours and micron thickness of pipe wall can not be less than 700nm.The present invention proposes a kind of original position
Optics gas phase super-saturation precipitation method fast-growth high-quality ultra-thin wall Zinc oxide single crystal micron tube is used in optics floating region stove first
The mode of optics pre-burning, it is uniform in size to be quickly obtained grain size, the second best in quality charge bar, directly improves optics floating region stove later
Halogen lamp power simultaneously increases growth soaking time, and fast-growth in situ has the ultra-thin-wall Zinc oxide single crystal of both whole hexagons structure
Micron tube (wall thickness~450nm), this ultra-thin-wall Zinc oxide single crystal micron tube are realizing ultralow threshold value ultraviolet laser lasing and height
There is important potential application in terms of the preparation of sensitive detection device.
Invention content
It is an object of the invention to realize the fast-growth in situ of the Zinc oxide single crystal micron tube of high-quality ultra-thin wall, wall
Thickness is most thin can to reach~450nm, and its diameter~230 μm, overcome and grow wall using conventional gas-phase super-saturation precipitation method at present
The problems such as thicker and preparation time is long.
A kind of method of original position optics gas phase super-saturation precipitation method fast-growth ultra-thin-wall Zinc oxide single crystal micron tube, it is special
Sign is, includes the following steps：
(1) the plain embryo stick that one end is worn into the ZnO powder preparation of cone is placed directly within optics floating region stove halogen light
At focusing, charge bar optics pre-burning is carried out；For halogen lamp power between 1200-2400W, burn-in time is small in 2-6 in burn-in process
When between,
(2) halogen lamp power is directly improved after the completion of optics pre-burning to 3600-4200W, growth time 8-10h, is obtained
The Zinc oxide single crystal micron tube of ultra-thin-wall；Micron thickness of pipe wall is 400~800nm；
The speed of rotation of plain embryo stick is 5-20rpm in whole process, and air is pumped into floating region furnace chamber with the rate of 1-4L/min
It is interior.
Further, halogen lamp is 2-4 in step (1) optics burn-in process.
Further, alcohol is added in ZnO powder by (1), and ball milling, drying cross 200 mesh sieve, it is uniform to obtain particle size
ZnO powders.
(2) ZnO powders are fitted into balloon and are vacuumized, 1-2h is compacted under 70MPa isostatic presseds, obtain fine and close zinc oxide
The length of ceramic powder biscuit rod, plain embryo stick is about 4-5cm, a diameter of 1-2cm.
(3) plain embryo stick one end is worn into coniform, places it in four halogen lamp focal positions of optics floating region stove, setting element
The speed of rotation of embryo stick is 5-20rpm, and halogen lamp power is set as 1200-2400W, and air is pumped into floating region with the rate of 1-4L/min
In furnace chamber, soaking time is 2-6 hours, realizes the optics pre-burning of zinc oxide element embryo.
(4) after the completion of optics pre-burning, halogen lamp power is directly improved to 3600-4200W, keeps other conditions constant, (sets
The speed of rotation for setting plain embryo stick is 5-20rpm, and air is pumped into the rate of 1-4L/min in the furnace chamber of floating region) to carry out zinc oxide micro-
The growth of mitron, growth time 8-10h obtain ultra-thin-wall Zinc oxide single crystal micron tube.
Compared with the existing stove optics gas phase super-saturation precipitation method developing zinc oxide micron tube using optics floating region, the present invention
It has an advantageous effect in that：
1. preparing zinc oxide ceramics stick using optics pre-burning mode, ceramic charge bar is prepared instead of rotating furnace electric thermo-couple heating,
Charge bar preparation time is substantially reduced, while fast using optics pre-burning mode heating rate, prepared charge bar crystal grain is uniform, size is suitable
Preferably, it is that the growth of high-quality zinc oxide micron tube lays the foundation.
2. after the completion of optics pre-burning that floating region stove halogen lamp power is direct using optics gas phase supersaturation precipitation mode in situ
It increases, growth in situ Zinc oxide single crystal micron tube, avoids charge bar transfer and charge bar sintering cooling and growth heating-up time, subtract
Few preparation time, simplifies preparation flow.
3. Zinc oxide single crystal micron tube is thinner with wall thickness, it is more also easy to produce structural failure, is satiated using optics gas phase in situ
With the technology of precipitation, the charge bar of good quality can be obtained, and then high-quality ultra-thin wall zinc oxide list is grown under long soaking time
Brilliant micron tube, this cannot achieve by other methods.
Description of the drawings
Fig. 1 is that gas phase super-saturation precipitation method in situ prepares ultra-thin-wall Zinc oxide single crystal micron tube flow chart；
Fig. 2 be using halogen lamp power 1200W pre-burning zinc oxide element embryos stick 2 hours after, directly promoted lamp power arrive
3600W keeps the temperature the scanning electron microscopic picture of 8 hours Zinc oxide single crystal micron tubes grown；
Fig. 3 be using halogen lamp power 1800W pre-burning zinc oxide element embryos stick 4 hours after, directly promoted lamp power arrive
3600W keeps the temperature the scanning electron microscopic picture of 9 hours Zinc oxide single crystal micron tubes grown；
Fig. 4 be using halogen lamp power 2400W pre-burning zinc oxide element embryos stick 6 hours after, directly promoted lamp power arrive
3800W keeps the temperature the scanning electron microscopic picture of 10 hours Zinc oxide single crystal micron tubes grown；
Fig. 5 be using halogen lamp power 1800W pre-burning zinc oxide element embryos stick 4 hours after, directly promoted lamp power arrive
3800W keeps the temperature the scanning electron microscopic picture of 8 hours Zinc oxide single crystal micron tubes grown；
Fig. 6 be using halogen lamp power 1800W pre-burning zinc oxide element embryos stick 6 hours after, directly promoted lamp power arrive
4000W keeps the temperature the scanning electron microscopic picture of 10 hours Zinc oxide single crystal micron tubes grown；
Fig. 7 be using halogen lamp power 2400W pre-burning zinc oxide element embryos stick 4 hours after, directly promoted lamp power arrive
4200W keeps the temperature the scanning electron microscopic picture of 8 hours Zinc oxide single crystal micron tubes grown；
Fig. 8 be using halogen lamp power 2400W pre-burning zinc oxide element embryos stick 6 hours after, directly promoted lamp power arrive
4200W keeps the temperature the scanning electron microscopic picture of 10 hours Zinc oxide single crystal micron tubes grown.
Specific implementation mode
For goal of the invention, technical solution and the advantage of the clear present invention, with reference to the accompanying drawings and embodiments, to the present invention
It is further elaborated.It should be noted that described herein, specific examples are only used to explain the present invention, is not used to limit
The fixed present invention.
Embodiment 1
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 1h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 4cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 1200W, and air is pumped into the rate of 2L/min in the furnace chamber of floating region, and optics burn-in time 2 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 3600W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 8 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, pattern
As shown in Fig. 2, micron thickness of pipe wall is~700nm, it is a diameter of~110 μm.
Embodiment 2
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 2h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 5cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 1800W, and air is pumped into the rate of 1L/min in the furnace chamber of floating region, and optics burn-in time 4 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 3600W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 9 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, pattern
As shown in figure 3, micron thickness of pipe wall is~650nm, it is a diameter of~130 μm.
Embodiment 3
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 1h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 5cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 2400W, and air is pumped into the rate of 4L/min in the furnace chamber of floating region, and optics burn-in time 6 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 3800W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 10 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, shape
Looks as shown in figure 4, micron thickness of pipe wall be~600nm, it is a diameter of~150 μm.
Embodiment 4
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 2h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 4cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 1800W, and air is pumped into the rate of 3L/min in the furnace chamber of floating region, and optics burn-in time 4 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 3800W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 8 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, pattern
As shown in figure 5, micron thickness of pipe wall is~570nm, it is a diameter of~165 μm.
Embodiment 5
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 1h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 4cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 1800W, and air is pumped into the rate of 2L/min in the furnace chamber of floating region, and optics burn-in time 6 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 4000W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 10 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, shape
Looks as shown in fig. 6, micron thickness of pipe wall be~530nm, it is a diameter of~210 μm.
Embodiment 6
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 1h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 4cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 2400W, and air is pumped into the rate of 2L/min in the furnace chamber of floating region, and optics burn-in time 4 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 4200W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 8 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, pattern
As shown in fig. 7, micron thickness of pipe wall is~500nm, it is a diameter of~185 μm.
Embodiment 7
Alcohol is added in ZnO powder, ball milling, drying cross 200 mesh sieve, obtain the uniform ZnO powders of particle size；By ZnO
Powder is fitted into balloon and vacuumizes, and 1h is compacted under 70MPa isostatic presseds, obtains fine and close zinc oxide ceramics powder biscuit rod, plain embryo
The length of stick is about 4cm, a diameter of 1cm；Plain embryo stick one end is worn into coniform, places it in four halogen lamp of optics floating region stove
Focal position so that ceramic rod with thermally equivalent, can obtain the zinc oxide ceramics stick of high quality.The speed of rotation of plain embryo stick is set
For 10rpm, halogen lamp power is set as 2400W, and air is pumped into the rate of 2L/min in the furnace chamber of floating region, and optics burn-in time 6 is small
When, obtain zinc oxide ceramics stick；Continue to improve halogen lamp power to 4200W, carries out the growth of zinc oxide micrometer pipe, growth time
It is 10 hours, cools down later, until after entire furnace body temperature reaches room temperature, obtains ultra-thin-wall Zinc oxide single crystal micron tube, shape
Looks are as shown in figure 8, micron thickness of pipe wall~450nm, diameter~230 μm.
The foregoing is merely a few class embodiments of the present invention, are not intended to limit the invention, all bases in the present invention
All any modification, equivalent and improvement etc. done in this method and principle, should be included in protection scope of the present invention it
It is interior.
Claims (2)
1. a kind of method of original position optics gas phase super-saturation precipitation method fast-growth ultra-thin-wall Zinc oxide single crystal micron tube, feature
It is, includes the following steps：
(1) the plain embryo stick that one end is worn into the ZnO powder preparation of cone is placed directly within the stove halogen light focusing of optics floating region
Place carries out charge bar optics pre-burning；Halogen lamp power is between 1200-2400W in burn-in process, and burn-in time is in 2-6 hours
Between,
(2) halogen lamp power is directly improved after the completion of optics pre-burning to 3600-4200W, growth time 8-10h, is obtained ultra-thin
The Zinc oxide single crystal micron tube of wall；Micron thickness of pipe wall is 400~800nm；
The speed of rotation of plain embryo stick is 5-20rpm in whole process, and air is pumped into the rate of 1-4L/min in the furnace chamber of floating region.
2. a kind of optics gas phase super-saturation precipitation method fast-growth ultra-thin-wall Zinc oxide single crystal in situ described in accordance with the claim 1
The method of micron tube, which is characterized in that halogen lamp is 2-4 in step (1) optics burn-in process.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115321584A (en) * | 2022-07-21 | 2022-11-11 | 北京工业大学 | Preparation of beta-Ga 2 O 3 Method of making micro-tape |
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| JP2008169053A (en) * | 2007-01-09 | 2008-07-24 | National Institute Of Advanced Industrial & Technology | ZnO SELF-SUPPORTED CRYSTAL FILM HAVING HIGH C-AXIS ORIENTATION AND HIGH SPECIFIC SURFACE AREA AND METHOD OF MANUFACTURING THE SAME |
| CN102061522A (en) * | 2010-11-05 | 2011-05-18 | 北京工业大学 | Two-step preparation method of large Al2O3-based crystal |
| CN104313690A (en) * | 2014-10-10 | 2015-01-28 | 北京工业大学 | Method for growing GZO(ZnO: Ga) crystals |
| CN105858715A (en) * | 2016-05-28 | 2016-08-17 | 北京工业大学 | Preparation method of rich acceptor type ZnO microtube |
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2018
- 2018-01-17 CN CN201810046007.5A patent/CN108286073A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008169053A (en) * | 2007-01-09 | 2008-07-24 | National Institute Of Advanced Industrial & Technology | ZnO SELF-SUPPORTED CRYSTAL FILM HAVING HIGH C-AXIS ORIENTATION AND HIGH SPECIFIC SURFACE AREA AND METHOD OF MANUFACTURING THE SAME |
| CN102061522A (en) * | 2010-11-05 | 2011-05-18 | 北京工业大学 | Two-step preparation method of large Al2O3-based crystal |
| CN104313690A (en) * | 2014-10-10 | 2015-01-28 | 北京工业大学 | Method for growing GZO(ZnO: Ga) crystals |
| CN105858715A (en) * | 2016-05-28 | 2016-08-17 | 北京工业大学 | Preparation method of rich acceptor type ZnO microtube |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115321584A (en) * | 2022-07-21 | 2022-11-11 | 北京工业大学 | Preparation of beta-Ga 2 O 3 Method of making micro-tape |
| CN115321584B (en) * | 2022-07-21 | 2023-06-23 | 北京工业大学 | Preparation of beta-Ga 2 O 3 Method of micro-banding |
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