CN108269920A - A kind of solar cell and preparation method based on fullerene derivate - Google Patents

A kind of solar cell and preparation method based on fullerene derivate Download PDF

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Publication number
CN108269920A
CN108269920A CN201810030313.XA CN201810030313A CN108269920A CN 108269920 A CN108269920 A CN 108269920A CN 201810030313 A CN201810030313 A CN 201810030313A CN 108269920 A CN108269920 A CN 108269920A
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layer
fullerene derivate
solar cell
buffer layer
pffbt4t
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于军胜
张晓华
范谱
高瞻
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Priority to CN201810030313.XA priority Critical patent/CN108269920A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211Fullerenes, e.g. C60
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of solar cells and preparation method based on fullerene derivate, it is related to photovoltaic device preparation field, it is intended to solve the problems, such as in the active layer in solar cell in the prior art that thermal crystalline material is difficult to form a film at low temperature and film forming can destroy other functional layers under high temperature;Solar cell of the present invention includes photoactive layer, and the photoactive layer includes electron donor, electron acceptor and fullerene derivate;The electron donor uses thermal crystalline material;The present invention in the photoactive layer of solar cell by increasing fullerene derivate, fullerene derivate material is as " dispersant ", make the polymer molecule easily reunited that can equably " disperse " in organic solution at low temperature, so that polymer molecule can form a film at low temperature;In terms of the present invention is suitable for organic polymer photovoltaic device or organic semiconductor thin-film solar cell.

Description

A kind of solar cell and preparation method based on fullerene derivate
Technical field
The invention belongs to organic semiconductor thin-film area of solar cell, and in particular to a kind of based on fullerene derivate Solar cell and preparation method.
Background technology
With the sharp increase of global energy requirements, human society is faced with severe energy crisis and environmental degradation etc. Social concern, social development are continuously increased the demand of the energy, but the reserves of traditional energy are extremely limited.Meanwhile it passes The use of the system energy also results in very serious environmental problem, including atmosphere pollution, water pollution, greenhouse effects and PM2.5 Etc. hot issues.Solar energy is research field with fastest developing speed in recent years, most active as a kind of regenerative resource, is most One of project to attract attention.It, can be by photoactive layer material point according to the difference of the property of solar cell photoactive layer material For inorganic semiconductor material and organic semiconducting materials.Inorganic semiconductor material is studied than wide, base since development starting is early Leading position is occupied in solar cell application in the inorganic solar cell of inorganic semiconductor material.But it inorganic partly leads Body material has its shortcoming in itself, for example processing technology is extremely complex, material requirements is harsh, is not easy to carry out large area flexible to add Work, certain materials have toxicity etc., these shortcomings constrain the further development of inorganic solar cell.With inorganic semiconductor material It compares, the organic solar batteries based on organic semiconducting materials, not only there is the highest identical with inorganic solar cell to manage By photoelectric conversion efficiency, but also with light weight, can water-laid film, specific character can be processed into, flexible device, very is easily made It can extremely realize the significant advantages such as all plastic, oneself is through becoming one of hot spot studied both at home and abroad and solving energy danger at present Where the hope of machine.
However, compared with inorganic solar cell has mass produced, organic solar batteries are due to its current light Photoelectric transformation efficiency is also relatively low, and also it will take time for commercialization.In various raising organic solar batteries photoelectric conversion efficiencies Measure in, since the organic solar batteries of thick film systems can absorb more light, more excitons are generated, so as to very big Raising device photoelectric conversion efficiency, therefore by the common concern of people.But it is used to prepare thick film organic solar electricity The traditional active layer PffBT4T-2OD in pond:The roughness of PCBM films is big, and the reunion of electron donor (PffBT4T-2OD) is serious, More it is difficult to based on PffBT4T-2OD:The active layer solution of PCBM is at room temperature glue, it is necessary to be heated to very high temperature Could prepare film forming well, this high temperature preparation process can not only destroy other functional layers, and with printing at low temperature Technique is incompatible, it is difficult to realize large-scale production, i.e., thermal crystalline material is difficult to form a film at low temperature.Therefore, pass through optimization The preparation process of active layer reduces the defects of active layer, active layer thickness is promoted to the magnitude convenient for industrialized production, from And the photoelectric conversion efficiency of device is further promoted, it is one of emphasis and difficult point of current organic solar batteries area research.
Invention content
It is an object of the invention to:For thermal crystalline material in the active layer in solar cell in the prior art in low temperature Under be difficult to form a film and film forming the problem of destroying other functional layers under high temperature, the present invention provides one kind based on fullerene derivative The solar cell and preparation method of object.
The technical solution adopted by the present invention is as follows:
One aspect of the present invention provides a kind of solar cell based on fullerene derivate, described including photoactive layer Photoactive layer includes electron donor, electron acceptor and fullerene derivate;The electron donor uses thermal crystalline material.
In said program, specifically, substrate layer, first electrode, first buffer layer, second buffer layer and the second electricity are further included Pole, first electrode, first buffer layer, photoactive layer, second buffer layer and second electrode are set gradually from top to bottom.
In said program, specifically, the fullerene derivate accounts for the 0-25% of the quality of photoactive layer;The electronics is given Body accounts for the 39-39.5% of the quality of photoactive layer, and the electron acceptor accounts for the 58-60% of the quality of photoactive layer.
In said program, specifically, the fullerene derivate is C60 indole derivatives, C60 Hete rocyclic derivatives, C60 contain It is one or more in azepine derivatives or C60-TFT derivatives.
In said program, specifically, the electron donor is PffBT4T-2OD, PffBT4T-C9C13、PffBT4T- C10C14It is or one or more in PffBX4T-2DT.
In said program, specifically, the electron acceptor is PC71BM。
In said program, specifically, the photoactive layer thickness is 200~300nm.
In said program, the first electrode is transparent conductive cathode ITO, and the first buffer layer is cathode buffer layer, The cathode buffer layer is TPBi, BCP, Bphen, Alq3, ZnO or TiO2In it is one or more;
The second buffer layer is anode buffer layer, and the anode buffer layer is PEDOT:PSS, aqueous dispersions or MoO3In It is one or more;
The second electrode is one or more in Ag, Al or Cu.
The present invention provide a kind of preparation method of solar battery based on fullerene derivate from another point of view, including with Lower step:
Step 1:Substrate layer and transparent conductive cathode the ITO substrate formed are cleaned, dried up after cleaning with nitrogen;
Step 2:First buffer layer is prepared, it is slow to coat first in the transparent conductive cathode ITO surfaces of substrate prepared by step 1 Rush layer;
Step 3:Photoactive layer is prepared in first buffer layer in step 2, the photoactive layer includes electron donor, electricity Sub- receptor and fullerene derivate, the electron donor use thermal crystalline material;
Step 4:Under vacuum, photoactive layer surface vapor deposition MoO in step 33, the second buffering is prepared Layer;
Step 5:Evaporation metal anode in second buffer layer in step 4;
In said program, specifically, the fullerene derivate is C60 indole derivatives, C60 Hete rocyclic derivatives, C60 contain It is one or more in azepine derivatives or C60-TFT derivatives;The electron donor is PffBT4T-2OD, PffBT4T-C9C13、 PffBT4T-C10C14It is or one or more in PffBX4T-2DT;The electron acceptor is PC71BM。
In conclusion by adopting the above-described technical solution, the beneficial effects of the invention are as follows:
1. the present invention in the photoactive layer of solar cell by increasing fullerene derivate, fullerene derivate material As " dispersant ", make the polymer molecule easily reunited that can equably " disperse " in organic solution at low temperature, from And polymer molecule is formed a film at low temperature, enormously simplify preparation process, be advantageously implemented it is extensive, high-throughput, Roll-to-roll industrial production, so as to the production cost for effectively improving production efficiency, reducing organic solar batteries;
2. the present invention has also filled up the gap of polymer in the film by increasing fullerene derivate material, greatly increase The contact area of receptor is given, significantly improves the generation rate of carrier, so as to effectively improve the performance of device;
3. the present invention also provides the preparation method of the solar cell with fullerene derivate, prepared by this method Solar battery process is simple, and the comprehensive performance of the solar cell obtained is preferable.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings Obtain other attached drawings.Attached drawing does not deliberately draw attached drawing by actual size equal proportion scaling, it is preferred that emphasis is shows the master of the present invention Purport.
Fig. 1 is the structure diagram of the present invention;
Fig. 2 is the effect diagram that active layer of the present invention is distributed to receptor;
Reference numeral:
1- substrate layers, 2- transparent conductive cathodes ITO, 3- cathode buffer layer, 4- photoactive layers, 5- anode buffer layers, 6- gold Belong to anode.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention In attached drawing, the technical solution in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is Part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art All other embodiments obtained without making creative work shall fall within the protection scope of the present invention.
One kind is based on PffBT4T-2OD:The fullerene derivate ternary organic solar batteries of PCBM systems and preparation side Method, which is characterized in that the solar cell uses reciprocal form structure, is followed successively by from top to bottom:Substrate layer 1, transparent conductive cathode ITO2, cathode buffer layer 3, photoactive layer 4, anode buffer layer 5 and metal anode 6.
Preferably, the photoactive layer 4 is by electron donor material [(5,6-difluoro-2,1,3- benzothiadiazol-
4,7-diyl)-alt-(3,3000-di(2-octyldodecyl)-2,20,50,200,500,2000- Quaterthiophen-5,5000-diyl)] (PffBT4T-2OD) and electron acceptor material [6,6]-phenyl-C71- butyric acid methylester(PC71BM mixed solution) is prepared, and thickness range is 200~300nm;It is described mixed Close PffBT4T-2OD and PC in solution71The mass percent of BM is:Electron donor 39-39.5%, electron acceptor 58-60% are rich Strangle ene derivative 0-25%, a concentration of 10~30mg/ml of the mixed solution.The Fullerene C20 derivative is C60 indoles Derivative, C60 Hete rocyclic derivatives, C60 nitrogen containing derivatives or C60-TFT derivatives it is one or more.
Preferably, in the photoactive layer 4, electron donor material PffBT4T-2OD, PffBT4T-C9C13、 PffBT4T-C10C14, it is one or more in PffBX4T-2DT.
Preferably, in the photoactive layer 4, electron acceptor material PC71BM。
Preferably, 5 material of cathode buffer layer is TPBi, BCP, Bphen, Alq3, ZnO or TiO2In one kind or A variety of, 3 thickness of cathode buffer layer is 15nm.
Preferably, 3 material of anode buffer layer is MoO3, 5 thickness of anode buffer layer is 30nm.
Preferably, 6 material of metal anode is one or more in Ag, Al or Cu, 6 thickness of metal anode is 100nm。
Preferably, 1 material of substrate layer is glass or transparent polymer, the transparent polymer material is poly- second One kind in alkene, polymethyl methacrylate, makrolon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic acid It is or a variety of.
Preferably, preparation process includes the following steps:
1) substrate being made of transparent substrates and transparent conductive cathode ITO is cleaned, is dried up after cleaning with nitrogen;
2) it by sol-gal process ZnO precursor solution, is placed on mixing platform and stirs 12h;
3) it in transparent conductive cathode ITO surfaces rotary coating, printing or sprayed cathode buffer layer mixing ZnO solution, goes forward side by side Row thermal annealing;
4) it is prepared by the way of spin coating or spraying or self assembly or inkjet printing or silk-screen printing on cathode buffer layer Photoactive layer, and inversion thermal annealing is carried out, the temperature of annealing is 85 DEG C, and the time of annealing is 5min~25min;
5) it is 3*10 in vacuum degree3Under the conditions of Pa, MoO is deposited on photoactive layer surface3, anode buffer layer is prepared;
6) the evaporation metal anode on anode buffer layer.
Preferably, step (2) the sol-gal process ZnO precursor weight composition is zinc acetate 60%~80%, second Hydramine 20%~40%.
Preferably, the temperature range of step (3) described thermal annealing, at 150~250 DEG C, time range is 40~80min.
Preferably, the thermal annealing mode is using Thermostatic platform heating, baking oven heating, Far-infrared Heating, Hot-blast Heating It is one or more.
Embodiment one
Fullerene derivate ternary organic solar batteries and preparation method are based on the technical scheme is that providing, such as Shown in Fig. 1, which uses reciprocal form structure, is followed successively by from top to bottom:Substrate layer 1, transparent conductive cathode ITO2, cathode Buffer layer 3, photoactive layer 4, anode buffer layer 5, metal anode 6;The weight percent of photoactive layer 4 forms:Electron donor 39-39.5%, electron acceptor 58-60%, fullerene derivate 0-25%;The fullerene C60Derivative is C60Indoles derives Object, C60Hete rocyclic derivatives, C60Nitrogen containing derivative, C60- TFT derivatives it is one or more.In the photoactive layer 4, electronics is given Body material is PffBT4T-2OD, PffBT4T-C9C13、PffBT4T-C10C14, one or more, electronics in PffBX4T-2DT Acceptor material is PC71BM.3 material of cathode buffer layer is TPBi, BCP, Bphen, Alq3, ZnO or TiO2In one kind or A variety of, 3 thickness of cathode buffer layer is 15nm.5 material of anode buffer layer is MoO3, 5 thickness of anode buffer layer is 30nm.Institute 6 material of metal anode is stated to be one or more in Ag, Al or Cu, 6 thickness of metal anode is 100nm.1 material of substrate layer For glass or transparent polymer, the transparent polymer material is polyethylene, polymethyl methacrylate, makrolon, poly- ammonia It is one or more in carbamate, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic acid.
The invention will be further described with reference to the accompanying drawings and embodiments:
The substrate that transparent substrate 1 and transparent conductive cathode ITO2 is made of of the surface roughness less than 1nm is carried out Cleaning, is dried up after cleaning with nitrogen;The ZnO that on transparent conductive cathode ITO2 surfaces prepared by rotary coating sol-gal process (4000rpm, 40s, 15nm) prepares cathode buffer layer 3, and PffBT4T-2OD is prepared using spin coating on cathode buffer layer 3:PCBM (1:1.5,15mg/ml) photoactive layer 4 (800rpm, 90s, 300nm) is inverted 85 DEG C, 5min of annealing, on 4 surface of photoactive layer Anode buffer layer 5MoO is deposited3(30nm);The evaporation metal anode 6Ag (100nm) on anode buffer layer 5.
Table 1 is under standard test condition:AM 1.5,100mW/cm2, fullerene derivate is prepared based on different mixing proportion The performance parameter of ternary solar cell device.It can be seen from Table 1 that it is mixed into the active layer of fullerene derivate, Neng Gouyou Effect promotes the fill factor of organic solar batteries, short circuit current, so as to promote its photoelectric conversion efficiency.
The effect diagram that Fig. 2 active layers of the present invention are distributed to receptor, what the small circle in figure represented is exactly that fullerene spreads out Biology is illustrated the principle of the present invention with reference to Fig. 2:
PffBT4T-2OD:PCBM systems, which are easily reunited, becomes colloid, belongs to reunion long-chain, and fullerene derivate category The spherical small molecule of fullerene derivate is added in spherical small molecule, the present invention, PffBT4T-2OD can be opened:PCBM bodies Reunion long-chain in system, increases intermolecular contact area, so that photoactive layer 4 can preferably form a film at low temperature, That is fullerene derivate material makes the polymer molecule easily reunited that can equably " divide at low temperature as " dispersant " Dissipate " in organic solution, so that polymer molecule can form a film at low temperature;
Technical scheme of the present invention can be used for eurymeric or transoid solar cell, and above-described embodiment is with transoid solar cell For;
What wherein above-mentioned " transparent conductive cathode ITO2 " was represented is " transparent conductive cathode ITO " and its corresponding mark Number;
Wherein above-mentioned chemical formula or chemical name be area of solar cell prepare common chemical substance, institute To be directed to its specific chemical formula or title does not do detailed explanation, but according to those skilled in the art should be beyond all doubt determine The substance and structure;
The above description is merely a specific embodiment, but protection scope of the present invention is not limited thereto, any Belong to those skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in all should It is included within the scope of the present invention.

Claims (10)

1. a kind of solar cell based on fullerene derivate, which is characterized in that including photoactive layer (4), the photolytic activity Layer (4) includes electron donor, electron acceptor and fullerene derivate;The electron donor uses thermal crystalline material.
2. a kind of solar cell based on fullerene derivate as described in claim 1, which is characterized in that further include substrate Layer (1), first electrode, first buffer layer, second buffer layer and second electrode;
The substrate layer (1), the first electrode, the first buffer layer, the photoactive layer (4), the second buffer layer It is set gradually from top to bottom with the second electrode.
A kind of 3. solar cell based on fullerene derivate as claimed in claim 2, which is characterized in that the fullerene Derivative accounts for the 0-25% of photoactive layer (4) quality;The electron donor accounts for the 39-39.5% of photoactive layer (4) quality, described Electron acceptor accounts for the 58-60% of photoactive layer (4) quality.
4. a kind of solar cell based on fullerene derivate as described in claim 1-3 any one claims, It is characterized in that, the fullerene derivate is C60 indole derivatives, C60 Hete rocyclic derivatives, C60 nitrogen containing derivatives or C60-TFT It is one or more in derivative.
5. a kind of solar cell based on fullerene derivate as described in claim 1, which is characterized in that the electronics is given Body is PffBT4T-2OD, PffBT4T-C9C13、PffBT4T-C10C14It is or one or more in PffBX4T-2DT.
6. a kind of solar cell based on fullerene derivate as described in claim 1, which is characterized in that the electronics by Body is PC71BM。
A kind of 7. solar cell based on fullerene derivate as described in claim 1, which is characterized in that the photolytic activity Layer (4) thickness is 200~300nm.
8. a kind of solar cell based on fullerene derivate as claimed in claim 2, which is characterized in that
The first electrode is transparent conductive cathode I TO, and the first buffer layer is cathode buffer layer (3), the cathode buffering Layer (3) is TPBi, BCP, Bphen, Alq3, ZnO or TiO2In it is one or more;
The second buffer layer is anode buffer layer (5), and the anode buffer layer (5) is PEDOT:PSS, aqueous dispersions or MoO3 In it is one or more;
The second electrode is metal anode (6), and metal anode (6) is one or more in Ag, Al or Cu.
9. a kind of preparation method of solar battery based on fullerene derivate, which is characterized in that include the following steps:
Step 1:Substrate layer (1) and transparent conductive cathode I TO (2) substrate formed are cleaned, blown after cleaning with nitrogen It is dry;
Step 2:First buffer layer is prepared, it is slow to coat first in transparent conductive cathode ITO (2) surface of substrate prepared by step 1 Rush layer;
Step 3:Prepare photoactive layer (4) in first buffer layer in step 2, the photoactive layer (4) including electron donor, Electron acceptor and fullerene derivate, the electron donor use thermal crystalline material;
Step 4:Under vacuum, in step 3 photoactive layer (4) surface vapor deposition MoO3, second buffer layer is prepared;
Step 5:Evaporation metal anode in second buffer layer in step 4.
10. a kind of preparation method of solar battery based on fullerene derivate as claimed in claim 9, which is characterized in that The fullerene derivate is in C60 indole derivatives, C60 Hete rocyclic derivatives, C60 nitrogen containing derivatives or C60-TFT derivatives It is one or more;The electron donor is PffBT4T-2OD, PffBT4T-C9C13、PffBT4T-C10C14Or PffBX4T- It is one or more in 2DT;The electron acceptor is PC71BM。
CN201810030313.XA 2018-01-12 2018-01-12 A kind of solar cell and preparation method based on fullerene derivate Pending CN108269920A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140116510A1 (en) * 2012-10-26 2014-05-01 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan Structure for improving thermal stability of bulk heterojunction solar cells and related photovoltaic apparatus and method for making the same
CN106025079A (en) * 2016-07-13 2016-10-12 电子科技大学 Organic solar cell based on small organic molecule additive and preparation method thereof
CN107565028A (en) * 2017-08-30 2018-01-09 电子科技大学 A kind of thick film organic solar batteries based on low temperature preparation thermal crystalline active layer and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140116510A1 (en) * 2012-10-26 2014-05-01 Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan Structure for improving thermal stability of bulk heterojunction solar cells and related photovoltaic apparatus and method for making the same
CN106025079A (en) * 2016-07-13 2016-10-12 电子科技大学 Organic solar cell based on small organic molecule additive and preparation method thereof
CN107565028A (en) * 2017-08-30 2018-01-09 电子科技大学 A kind of thick film organic solar batteries based on low temperature preparation thermal crystalline active layer and preparation method thereof

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Application publication date: 20180710