CN108269878A - A kind of photodetector based on novel hole transport layer and preparation method thereof - Google Patents
A kind of photodetector based on novel hole transport layer and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
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- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims abstract description 11
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- 238000004528 spin coating Methods 0.000 claims description 15
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000011368 organic material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052593 corundum Inorganic materials 0.000 claims description 10
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 9
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- 239000010949 copper Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 230000026267 regulation of growth Effects 0.000 claims description 9
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 6
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- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- 230000005540 biological transmission Effects 0.000 claims description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical group [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention belongs to technical field of photoelectric detection, specially a kind of photodetector based on novel hole transport layer and preparation method thereof, the detector includes electrically conducting transparent basal layer (1), novel hole transport layer (2), detection photosensitive layer (3), electron transfer layer (4) and reflection electrode layer (5), it is characterised in that：The novel hole transport layer (2) is four-layer structure, including first medium layer (201), second dielectric layer (202), third nano metal layer (203) and the 4th dielectric layer (204), and the first medium layer (201) is layered on electrically conducting transparent basal layer (1), the second dielectric layer (202) is layered on first medium layer (201), the third nano metal layer (203) is layered on second dielectric layer (202), 4th dielectric layer (204) is layered on third nano metal layer (203).
Description
Technical field
The invention belongs to technical field of photoelectric detection, specially a kind of photodetector based on novel hole transport layer and
Preparation method.
Background technology
Photodetector has the function of to convert light signals into electric signal, is the basic device for supporting optical information technology field
Part has a wide range of applications in fields such as optic communication, sensing, safety and bio-sensings.The photodetector of commercialization at present
It is mainly based upon the inorganic semiconductor materials such as Si, GaN, InGaAs.This kind of detector is in response speed, sensitivity and stability
Aspect is respectively provided with good performance.But at the same time, based on Si, the photodetector preparation process of GaN, InGaAs is complicated, into
This height.Therefore, exploitation is functional, and the photodetector of low cost is to the development important in inhibiting in optical information field.
Due to having flexible, cheap and many merits such as being easily integrated, it is produced organic photodetector in consumer electronics
The necks such as product, household appliance, Intelligent building lighting, industry, production safety, health care and life science, environment, toy and education
Domain will be widely used.But the organic photodetector reported at present is all relatively low in the responsiveness of response range, particularly
There is larger gap in its service life compared with inorganic detector.
It to be solved the problems, such as so providing a kind of photodetector of new responsiveness high life length and becoming us.
Invention content
A kind of wide spectrum the purpose of the present invention is to provide high-responsivity responds photodetector, to solve above-mentioned background
The problem of being proposed in technology.
To achieve the above object, the present invention provides following technical solution：
A kind of photodetector based on novel hole transport layer is provided as one aspect of the present invention, including transparent
Conductive basal layer, novel hole transport layer, detection photosensitive layer, electron transfer layer and reflection electrode layer, it is characterised in that：It is described new
Type hole transmission layer is four-layer structure, including first medium layer, second dielectric layer, third nano metal layer and the 4th dielectric layer,
And the first medium layer stackup, on electrically conducting transparent basal layer, the second dielectric layer is layered on first medium layer,
The third nano metal layer stackup on second dielectric layer, the 4th dielectric layer be stacked in third nano metal layer it
On, the first medium layer be technique for atomic layer deposition growth Al2O3, Al2O3 thickness be 2nm, the second medium
Layer is CH3NH3PbI3, and the thickness of CH3NH3PbI3 is 10-50nm, and the third nano metal layer is the nanometer of metallic copper
Grain, the nominal thickness of the third nano metal layer are 2nm, and the grain size of the nano particle of metallic copper is in 10-20nm, described the
Four dielectric layers are PEDOT:The composite material of PSS and NPB is prepared, wherein PEDOT:The molar ratio of PSS and NPB is 5：(1-
2), the thickness of the 4th dielectric layer is 30-50nm.
As preference, the electrically conducting transparent basal layer 1 includes the first substrate of glass and is deposited on the first substrate of glass
On tin indium oxide form, the thickness 0.5-7mm of first substrate of glass, the thickness of the tin indium oxide is 100-
300nm, the visible light transmittance of the electrically conducting transparent basal layer 1 are more than 80%, and square resistance is less than 10 ohm.
As preference, the detection photosensitive layer 3 is PIN type structure, including the first P-type layer, the first I types layer and first
N-type layer, first P-type layer is hole-transporting type organic material, and the energy gap of hole-transporting type organic material is more than
2eV, the thickness of first P-type layer are 20-50nm, and first N-type layer is electron-transporting type organic material, and electron-transport
The energy gap of type organic material is more than 2.4eV, and the thickness of first N-type layer is 20-50nm, and the first I type layers are
Tri compound structure is 0.5 including molar ratio：0.5：0.5 the first P-type layer material, the first N-type layer material and visible ray photosensitive layer
Material, the energy gap ranging from 1-2eV of the visible light-sensitive layer material, it is seen that the light absorption peak wavelength model of light-sensitive material
It encloses for 360-760nm.
As preference, the electron transfer layer 4 is prepared using PC61BM or PC71BM, the electron-transport
The thickness of layer 4 is 10-100nm.
As preference, the reflection electrode layer (5) is prepared using aluminium, silver or gold, the reflection electrode layer
(5) thickness is 100-1000nm.
As another aspect of the present invention, a kind of preparation of the photodetector based on novel hole transport layer is provided
Method, the preparation of detector include the following steps,
S1, the pretreatment of electrically conducting transparent basal layer；
S2, growth novel hole transport layer；
S3, growth detection photosensitive layer；
S4, growth electron transfer layer；
S5, growth reflection electrode layer.
As preference, the pretreatment of step S1, electrically conducting transparent basal layer includes step, electrically conducting transparent basal layer uses acetone
It is cleaned with ethyl alcohol cotton balls, then with acetone, ethyl alcohol and each ultrasound of deionized water after ten minutes, 100 DEG C of drying.
As preference, S2, growth novel hole transport layer include step,
S21, one dielectric layer of growth regulation grow the Al2O3 of 2nm as first medium layer in atomic layer deposition apparatus；
S22, growth second dielectric layer, using liquid phase one-step method, 80 DEG C of the substrate that growth has first medium layer preheats 10 points
Clock, by PbI2 and CH3NH3I according to molar ratio be 1:1 is dissolved in the in the mixed solvent of dimethyl sulfoxide (DMSO) and gamma-butyrolacton, PbI2
The 10% of solution gross mass is accounted for CH3NH3I, wherein DMSO and GBL volume ratios are 3:7, CH3NH3PbI3 spin coating liquid is obtained, it will
CH3NH3PbI3 spin coatings drop is on first medium layer, with the spin coating at once of the rotating speed of 2000rpm, after spin coating 90s, it is placed on 90
It anneals 60 minutes in DEG C thermal station；
S23, three nano metal layer of growth regulation, the method that copper wire is deposited in vacuum coating equipment obtain the nanometer of metallic copper
Grain, evaporation condition are rate 0.05nm/s, and background vacuum is less than 10-4Pa；
S24, four dielectric layer of growth regulation, by PEDOT:The composite material of PSS and NPB is grown in third using the method for spin coating
On nano metal layer.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention is passed by device overall structure and novel hole
The matching design of defeated layer can improve responsiveness and the service life of detector.Pass through the setting of fine and close Al2O3, a side in the present invention
Face blocking steam enters device, on the other hand, prevents from causing detector performance since the indium metal in ITO enters device inside
Decline.It is acted on using the surface plasmon resonance of third nano metal layer, it can be as much as possible into photosensitive by incident light
It is absorbed in layer by detector, so as to improve the responsiveness of detector.Using CH3NH3PbI3 second dielectric layer, promote the receipts in hole
Collection stops leakage current using the 4th dielectric layer, finally greatly improves the responsiveness of detector.Meanwhile the 4th dielectric layer can rise
To the effect that exciton is avoided to be quenched in third nano metal layer.
Description of the drawings
Fig. 1 is schematic structural view of the invention；
Fig. 2 is novel hole transport layer structure diagram of the present invention；
In figure：1- electrically conducting transparent basal layers, 2- novel hole transport layers, 3- detection photosensitive layers, 4- electron transfer layers, 5- are anti-
Penetrate electrode layer, 201- first medium layers, 202- second dielectric layer, 203- third nano metal layers, the 4th dielectric layers of 204-.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that term " on ", " under ", "front", "rear", "left", "right", " top ",
The orientation or position relationship of the instructions such as " bottom ", " interior ", " outer " are based on orientation shown in the drawings or position relationship, merely to just
In the description present invention and simplify description rather than instruction or imply signified device or element must have specific orientation, with
Specific azimuth configuration and operation, therefore be not considered as limiting the invention.
- 2 are please referred to Fig.1, the present invention provides a kind of technical solution：A kind of photodetection based on novel hole transport layer
Device including electrically conducting transparent basal layer 1, novel hole transport layer 2, detects photosensitive layer 3, electron transfer layer 4 and reflection electrode layer 5,
Novel hole transport layer 2 is four-layer structure, including first medium layer 201, second dielectric layer 202,203 and of third nano metal layer
4th dielectric layer 204, and the first medium layer 201 is layered on electrically conducting transparent basal layer 1, second dielectric layer 202 is laminated
On first medium layer 201, third nano metal layer 203 is layered on second dielectric layer 202, the 4th 204 layers of dielectric layer
Be stacked on third nano metal layer 203, first medium layer 201 be technique for atomic layer deposition growth Al2O3, Al2O3 is thick
It spends for 2nm, the second dielectric layer 202 is CH3NH3PbI3, and the thickness of CH3NH3PbI3 is 10-50nm, the third
Nano metal layer 203 is the nano particle of metallic copper, and the nominal thickness of third nano metal layer 203 is 2nm, the nanometer of metallic copper
For the grain size of particle in 10-20nm, the 4th dielectric layer 204 is PEDOT:The composite material of PSS and NPB is prepared, wherein
PEDOT:The molar ratio of PSS and NPB is 5：(1-2), the thickness of the 4th dielectric layer 204 is 30-50nm.
Further, electrically conducting transparent basal layer 1 includes the first substrate of glass and is deposited on the first substrate of glass
Tin indium oxide is formed, the thickness 0.5-7mm of first substrate of glass, and the thickness of the tin indium oxide is 100-300nm, institute
The visible light transmittance for stating electrically conducting transparent basal layer 1 is more than 80%, and square resistance is less than 10 ohm.
Further, detection photosensitive layer 3 is PIN type structure, including the first P-type layer, the first I types layer and the first N-type layer, and institute
The first P-type layer is stated as hole-transporting type organic material, and the energy gap of hole-transporting type organic material is more than 2eV, described the
The thickness of one P-type layer is 20-50nm, and first N-type layer is electron-transporting type organic material, and electron-transporting type organic material
Energy gap be more than 2.4eV, the thickness of first N-type layer is 20-50nm, and the first I types layer is tri compound knot
Structure is 0.5 including molar ratio：0.5：0.5 the first P-type layer material, the first N-type layer material and visible light-sensitive layer material, it is described
Visible light-sensitive layer material energy gap ranging from 1-2eV, it is seen that the light absorption peak value wave-length coverage of light-sensitive material be 360-
760nm。
Further, electron transfer layer 4 is prepared using PC61BM or PC71BM, the thickness of the electron transfer layer 4
It spends for 10-100nm.
Further, reflection electrode layer 5 is prepared using aluminium, silver or gold, and the thickness of the reflection electrode layer (5) is
100-1000nm。
A kind of preparation method of the photodetector based on novel hole transport layer, the preparation of detector include following step
Suddenly,
S1, the pretreatment of electrically conducting transparent basal layer；
S2, growth novel hole transport layer；
S3, growth detection photosensitive layer；
S4, growth electron transfer layer；
S5, growth reflection electrode layer.
Further, step S1, the pretreatment of electrically conducting transparent basal layer includes step, electrically conducting transparent basal layer using acetone and
Ethyl alcohol cotton balls is cleaned, then with acetone, ethyl alcohol and each ultrasound of deionized water after ten minutes, 100 DEG C of drying.
Further, S2, growth novel hole transport layer include step,
S21, one dielectric layer of growth regulation grow the Al2O3 of 2nm as first medium layer in atomic layer deposition apparatus；
S22, growth second dielectric layer, using liquid phase one-step method, 80 DEG C of the substrate that growth has first medium layer preheats 10 points
Clock, by PbI2 and CH3NH3I according to molar ratio be 1:1 is dissolved in the in the mixed solvent of dimethyl sulfoxide (DMSO) and gamma-butyrolacton, PbI2
The 10% of solution gross mass is accounted for CH3NH3I, wherein DMSO and GBL volume ratios are 3:7, CH3NH3PbI3 spin coating liquid is obtained, it will
CH3NH3PbI3 spin coatings drop is on first medium layer, with the spin coating at once of the rotating speed of 2000rpm, after spin coating 90s, it is placed on 90
It anneals 60 minutes in DEG C thermal station；
S23, three nano metal layer of growth regulation, the method that copper wire is deposited in vacuum coating equipment obtain the nanometer of metallic copper
Grain, evaporation condition are rate 0.05nm/s, and background vacuum is less than 10-4Pa；
S24, four dielectric layer of growth regulation, by PEDOT:The composite material of PSS and NPB is grown in third using the method for spin coating
On nano metal layer.
This is using the responsiveness of the detector of the novel hole transport layer in the present embodiment with not using novel hole transport
Compared to that can improve 20%, the service life can be enhanced about more than once the parametric device of layer.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (8)
1. a kind of photodetector based on novel hole transport layer, including electrically conducting transparent basal layer (1), novel hole transport layer
(2), detection photosensitive layer (3), electron transfer layer (4) and reflection electrode layer (5), it is characterised in that：The novel hole transport layer
(2) it is four-layer structure, is situated between including first medium layer (201), second dielectric layer (202), third nano metal layer (203) and the 4th
Matter layer (204), and the first medium layer (201) is layered on electrically conducting transparent basal layer (1), the second dielectric layer
(202) be layered on first medium layer (201), the third nano metal layer (203) be layered in second dielectric layer (202) it
On, the 4th dielectric layer (204) is layered on third nano metal layer (203), and the first medium layer (201) is original
The Al2O3 of sublayer deposition technique growth, Al2O3 thickness are 2nm, and the second dielectric layer (202) is CH3NH3PbI3,
The thickness of CH3NH3PbI3 is 10-50nm, and the third nano metal layer (203) is the nano particle of metallic copper, described
The nominal thickness of third nano metal layer (203) is 2nm, and the grain size of the nano particle of metallic copper is situated between in 10-20nm, the described 4th
Matter layer (204) is PEDOT:The composite material of PSS and NPB is prepared, wherein PEDOT:The molar ratio of PSS and NPB is 5：(1-
2), the thickness of the 4th dielectric layer (204) is 30-50nm.
2. a kind of photodetector based on novel hole transport layer according to claim 1, it is characterised in that：It is described
Bright conductive basal layer (1) is formed including the first substrate of glass and the tin indium oxide being deposited on the first substrate of glass, described
The first substrate of glass thickness 0.5-7mm, the thickness of the tin indium oxide is 100-300nm, the electrically conducting transparent basal layer
(1) visible light transmittance is more than 80%, and square resistance is less than 10 ohm..
3. a kind of photodetector based on novel hole transport layer according to claim 1, it is characterised in that：Described
It is PIN type structure to detect photosensitive layer (3), and including the first P-type layer, the first I types layer and the first N-type layer, first P-type layer are sky
Cave mode transmission organic material, and the energy gap of hole-transporting type organic material is more than 2eV, the thickness of first P-type layer is
20-50nm, first N-type layer is electron-transporting type organic material, and the energy gap of electron-transporting type organic material is more than
2.4eV, the thickness of first N-type layer is 20-50nm, and the first I types layer is tri compound structure, is including molar ratio
0.5：0.5：0.5 the first P-type layer material, the first N-type layer material and visible light-sensitive layer material, the visible light-sensitive layer material
Energy gap ranging from 1-2eV, it is seen that the light absorption peak value wave-length coverage of light-sensitive material be 360-760nm.
4. a kind of photodetector based on novel hole transport layer according to claim 1, it is characterised in that：Described
Electron transfer layer (4) is prepared using PC61BM or PC71BM, and the thickness of the electron transfer layer (4) is 10-100nm.
5. a kind of photodetector based on novel hole transport layer according to claim 1, it is characterised in that：Described
Reflection electrode layer (5) is prepared using aluminium, silver or gold, and the thickness of the reflection electrode layer (5) is 100-1000nm.
6. a kind of preparation method of photodetector based on novel hole transport layer according to claim 1, feature
It is：The preparation of detector includes the following steps,
S1, the pretreatment of electrically conducting transparent basal layer；
S2, growth novel hole transport layer；
S3, growth detection photosensitive layer；
S4, growth electron transfer layer；
S5, growth reflection electrode layer.
7. a kind of preparation method of photodetector based on novel hole transport layer according to claim 6, feature
It is：Step S1, the pretreatment of electrically conducting transparent basal layer includes step, and electrically conducting transparent basal layer is wiped using acetone and ethyl alcohol cotton balls
It washes, then with acetone, ethyl alcohol and each ultrasound of deionized water after ten minutes, 100 DEG C of drying.
8. a kind of preparation method of photodetector based on novel hole transport layer according to claim 6, feature
It is：S2, growth novel hole transport layer include step,
S21, one dielectric layer of growth regulation grow the Al2O3 of 2nm as first medium layer in atomic layer deposition apparatus；
S22, growth second dielectric layer, using liquid phase one-step method, 80 DEG C of the substrate that growth has first medium layer preheats 10 minutes, will
PbI2 and CH3NH3I is 1 according to molar ratio:1 is dissolved in the in the mixed solvent of dimethyl sulfoxide (DMSO) and gamma-butyrolacton, PbI2 and
CH3NH3I accounts for the 10% of solution gross mass, and wherein DMSO and GBL volume ratios are 3:7, CH3NH3PbI3 spin coating liquid is obtained, it will
CH3NH3PbI3 spin coatings drop is on first medium layer, with the spin coating at once of the rotating speed of 2000rpm, after spin coating 90s, it is placed on 90
It anneals 60 minutes in DEG C thermal station；
S23, three nano metal layer of growth regulation, the method that copper wire is deposited in vacuum coating equipment obtain the nano particle of metallic copper, steam
Plating condition is rate 0.05nm/s, and background vacuum is less than 10-4Pa；
S24, four dielectric layer of growth regulation, by PEDOT:The composite material of PSS and NPB is grown in third nanometer using the method for spin coating
On metal layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010008271A1 (en) * | 2000-01-12 | 2001-07-19 | Kabushiki Kaisha Toshiba | Planar X-ray detector |
| CN103746078A (en) * | 2014-01-27 | 2014-04-23 | 北京大学 | Perovskite solar cell and preparation method thereof |
| KR20170038397A (en) * | 2015-09-30 | 2017-04-07 | 광주과학기술원 | Solar cell of hybrid type and method for fabricating thereof |
| CN106876589A (en) * | 2017-01-16 | 2017-06-20 | 浙江大学 | The perovskite solar cell of novel hole transport layer material and its composition |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010008271A1 (en) * | 2000-01-12 | 2001-07-19 | Kabushiki Kaisha Toshiba | Planar X-ray detector |
| CN103746078A (en) * | 2014-01-27 | 2014-04-23 | 北京大学 | Perovskite solar cell and preparation method thereof |
| KR20170038397A (en) * | 2015-09-30 | 2017-04-07 | 광주과학기술원 | Solar cell of hybrid type and method for fabricating thereof |
| CN106876589A (en) * | 2017-01-16 | 2017-06-20 | 浙江大学 | The perovskite solar cell of novel hole transport layer material and its composition |
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