CN108267888A

CN108267888A - A kind of quantum dot backlight module, display device and electronic equipment

Info

Publication number: CN108267888A
Application number: CN201611257585.0A
Authority: CN
Inventors: 刘政; 杨行; 杨一行; 曹蔚然; 钱磊
Original assignee: TCL Corp
Current assignee: TCL Corp
Priority date: 2016-12-30
Filing date: 2016-12-30
Publication date: 2018-07-10

Abstract

The invention discloses a kind of quantum dot backlight module, display device and electronic equipments.Wherein, the quantum dot backlight module includes quantum dot diaphragm, the material of the quantum dot diaphragm is quanta point material, the quanta point material includes at least one quantum-dot structure unit arranged successively in radial directions, and the quantum-dot structure unit is the graded alloy component structure of level width variation or the in the radial direction consistent homogeneous components structure of level width in the radial direction.The quantum dot diaphragm uses quanta point material, and coloured light can be inspired under the irradiation of backlight, improves the colour gamut of display.

Description

A kind of quantum dot backlight module, display device and electronic equipment

Technical field

The present invention relates to quantum dot field, more particularly to a kind of quantum dot backlight module, display device and electronic equipment.

Background technology

At present, liquid crystal display (TFT-LCD) has developed quite ripe as the display of current more mainstream. In existing liquid crystal display device, generally use white light emitting diode (LED) passes through light guide plate and light as back light Learn the backlight needed for the reasonably combined realization liquid crystal of diaphragm.As people are to lightening, high colour gamut, high color saturation and section The requirement of energy is higher and higher, realizes that white light source, high colour gamut, the scheme of high color saturation have in backlight at present：Using ultraviolet LED cooperation RGB fluorescent powders are realized；Coordinate red green fluorescence powder using blue-ray LED；Add feux rouges using blue-ray LED plus green light LED.Though These right schemes can improve colour gamut, but implement more difficult, and cost is higher.

Thus the prior art could be improved and improve.

Invention content

Part in view of above-mentioned deficiencies of the prior art the purpose of the present invention is to provide a kind of quantum dot backlight module, is shown Showing device and electronic equipment, it is intended to improve the colour gamut of display.

In order to achieve the above object, this invention takes following technical schemes：

A kind of quantum dot backlight module, including quantum dot diaphragm, wherein, the material of the quantum dot diaphragm is quanta point material, The quanta point material includes at least one quantum-dot structure unit arranged successively in radial directions, the quantum-dot structure Graded alloy component structure or in the radial direction level width consistent uniform of the unit for the variation of level width in the radial direction Component structure.

The quantum dot backlight module, wherein, the quantum dot backlight module further includes：Backlight, light guide plate and anti- Mating plate；The reflecting piece, light guide plate and quantum dot diaphragm stack setting successively from top to bottom；The backlight is arranged on described lead The incident side of tabula rasa.

The quantum dot backlight module, wherein, the quantum dot backlight module further includes：Overlay the quantum dot film The optical diaphragm of piece upper surface.

The quantum dot backlight module, wherein, the quantum dot backlight module further includes glue frame, the backlight, anti- Mating plate, light guide plate, quantum dot diaphragm and optical diaphragm are arranged in the glue frame.

The quantum dot backlight module, wherein, the quantum dot diaphragm includes main body and positioned at the opposite both ends of main body Extension, the main body of the quantum dot diaphragm overlays the upper surface of the light guide plate, and an extension is relative to the master The incident side of the light guide plate is arranged on after body bending, another extension is arranged on described lead after being bent relative to the main body The oncoming lane of tabula rasa incident side.

The quantum dot backlight module, wherein, the quanta point material further includes polymer, prepolymer, oligomer, small It is one or more in molecule, inorganic material.

The quantum dot backlight module, wherein, the quanta point material further includes matrix, the quantum-dot structure unit Random dispersion is dispersed in the matrix.

The quantum dot backlight module, wherein, the quantum-dot structure unit includes red quantum dot structural unit, green It is one or more in color quantum dot structural unit and blue quantum dot structural unit.

The quantum dot backlight module, wherein, the quantum-dot structure unit include red quantum dot structural unit and Green quantum dot structural unit.

The quantum dot backlight module, wherein, the matrix includes one kind in polymer, glass, gel.

The quantum dot backlight module, wherein, the matrix include melmac, phenolic resin, alkyl resin, Epoxy resin, polyurethane resin, maleic resin, polyamide, polymethacrylates, polyacrylate, poly- carbon The copolymerization that is formed of monomer of acid esters, polyethylene, pyrrolidones, hydroxyethyl cellulose, hydroxymethyl cellulose and aforementioned resin Object.

The quantum dot backlight module, wherein, the quantum-dot structure unit is more outside energy level in the radial direction The wider graded alloy component structure of width, and the energy level of quantum-dot structure unit adjacent in radial directions is continuous.

The quantum dot backlight module, wherein, the quanta point material includes at least three in radial directions successively The quantum-dot structure unit of arrangement, wherein, at least three quantum-dot structure units, the quantum-dot structure positioned at center and surface Unit is the graded alloy component structure that more outside level width is wider in the radial direction, and in radial directions it is adjacent gradually The energy level for becoming the quantum-dot structure unit of alloy compositions structure is continuous；Positioned at the quantum-dot structure unit on center and surface it Between a quantum-dot structure unit be homogeneous components structure.

The quantum dot backlight module, wherein, the quanta point material includes two kinds of quantum-dot structure unit, The quantum-dot structure unit of one of which type is the wider graded alloy component structure of more outside level width in the radial direction, Another type of quantum-dot structure unit is the narrower graded alloy component structure of more outside level width in the radial direction, institute It states two kinds of quantum-dot structure unit to be radially alternately distributed successively, and quantum dot knot adjacent in radial directions The energy level of structure unit is continuous.

The quantum dot backlight module, wherein, the quantum-dot structure unit is more outside energy level in the radial direction The wider graded alloy component structure of width, and the energy level of adjacent quantum-dot structure unit is discontinuous.

The quantum dot backlight module, wherein, the quantum-dot structure unit is more outside energy level in the radial direction The narrower graded alloy component structure of width, and the energy level of adjacent quantum-dot structure unit is discontinuous.

The quantum dot backlight module, wherein, the quanta point material includes two amounts point structural unit, wherein one Quantum-dot structure unit is planted as the wider graded alloy component structure of more outside level width in the radial direction, another quantum dot Structural unit is homogeneous components structure, and the inside of the quanta point material includes one or more graded alloy component knot The quantum-dot structure unit of structure, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions It is continuous；The outside of the quanta point material includes the quantum-dot structure list of one or more homogeneous components structure Member.

The quantum dot backlight module, wherein, the quanta point material includes two amounts point structural unit, wherein one Kind quantum-dot structure unit is homogeneous components structure, and another quantum-dot structure unit is more outside level width in the radial direction Wider graded alloy component structure, the inside of the quanta point material include one or more homogeneous components structure Quantum-dot structure unit, the outside of the quanta point material include the quantum of one or more graded alloy component structure Point structural unit, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous 's.

The quantum dot backlight module, wherein, the quantum-dot structure unit be comprising II races and VI races element gradually Become alloy compositions structure or uniform alloy compositions structure.

The quantum dot backlight module, wherein, the quantum-dot structure unit includes 2-20 layers of monoatomic layer, Huo Zhesuo State the structure cell layer that quantum-dot structure unit includes 1-10 layers.

The quantum dot backlight module, wherein, the glow peak wave-length coverage of the quanta point material for 400 nanometers extremely 700 nanometers.

The quantum dot backlight module, wherein, the peak width at half height of the glow peak of the quanta point material for 12 nanometers extremely 80 nanometers.

A kind of display device, including quantum dot backlight module as described above and liquid crystal display panel, the liquid crystal display panel setting On the quantum dot backlight module.

A kind of electronic equipment, including display device as described above.

The electronic equipment, wherein, the electronic equipment is mobile phone, laptop, tablet computer, television set, is shown Show one kind in device, wearable display equipment.

Compared to the prior art, the present invention provides a kind of quantum dot backlight module, display device and electronic equipment.Wherein, The quantum dot backlight module includes quantum dot diaphragm, and the material of the quantum dot diaphragm is quanta point material, the quantum dot Material includes at least one quantum-dot structure unit arranged successively in radial directions, and the quantum-dot structure unit is radially The graded alloy component structure or the consistent homogeneous components structure of level width in the radial direction that level width changes on direction.Institute Quantum dot diaphragm is stated using quanta point material, coloured light can be inspired under the irradiation of backlight, improves display Colour gamut.

Description of the drawings

Fig. 1 is the structure diagram of display device that one embodiment of the invention provides.

Fig. 2 is the energy level knot of quanta point material concrete structure 1 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 3 is the energy level knot of quanta point material concrete structure 2 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 4 is the energy level knot of quanta point material concrete structure 3 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 5 is the energy level knot of quanta point material concrete structure 4 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 6 is the energy level knot of quanta point material concrete structure 5 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 7 is the energy level knot of quanta point material concrete structure 6 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 8 is the energy level knot of quanta point material concrete structure 7 in the quantum dot backlight module that one embodiment of the invention provides Structure curve.

Fig. 9 is quantum-dot structure unit in quanta point material in the quantum dot backlight module that one embodiment of the invention provides With the distribution schematic diagram of diffusion particle.

Specific embodiment

The present invention provides a kind of quantum dot backlight module, display device and electronic equipment.To make the purpose of the present invention, technology Scheme and effect are clearer, clear and definite, and the present invention is described in more detail for the embodiment that develops simultaneously referring to the drawings.It should manage Solution, specific embodiment described herein only to explain the present invention, are not intended to limit the present invention.

Referring to Fig. 1, the present invention provides a kind of display device, it is described including quantum dot backlight module and liquid crystal display panel 100 Liquid crystal display panel 100 is arranged on the quantum dot backlight module.The quantum dot backlight module includes quantum dot diaphragm（Film material Material）120, wherein, the material of the quantum dot diaphragm 120 is quanta point material, the quanta point material include it is at least one The quantum-dot structure unit arranged successively in the radial direction, the quantum-dot structure unit change for level width in the radial direction Graded alloy component structure or the consistent homogeneous components structure of level width in the radial direction.

Further, in the present invention, the quantum-dot structure unit includes II races and VI races element.The quantum-dot structure Unit is the graded alloy component structure comprising II races and VI races element or uniform alloy compositions structure.II races element includes But it is not limited to Zn, Cd, Hg, Cn etc.；VI races element includes but not limited to O, S, Se, Te, Po, Lv etc..Specifically, Mei Geliang The alloy compositions composition of son point structural unit is Cd_xZn_1-xSe_yS_1-y, wherein 0≤x≤1,0≤y≤1, and during x with y differences It is 0 and be asynchronously 1.It should be noted that the above situation is preferable case, for the quantum-dot structure of graded alloy component structure For unit, component is alloy compositions；And for the quantum-dot structure unit of homogeneous components structure, component can be with It is alloy compositions or non-alloyed component, but currently preferred is alloy compositions, i.e., described homogeneous components structure is equal One alloy compositions structure, it is further preferred that comprising II races and VI races element, subsequent embodiment of the present invention is with uniform alloy compositions It is illustrated for structure, it will be clear that can equally implement for unalloyed homogeneous components structure.

Radial direction herein refers to the center outwardly direction from the quanta point material, it is assumed for example that amount of the invention Son point material is spherical or similar spherical structure, then the radial direction refers to the direction along radius, the center of quanta point material （It is or internal）Refer to the center of its physical arrangement, the surface of quanta point material（It is or external）Refer to the surface of its physical arrangement.Institute Coloured light can be inspired under the irradiation of backlight by stating quantum dot diaphragm, improve the colour gamut of display.

Further, the quantum dot backlight module further includes：Backlight（It is not shown in figure）, light guide plate 130 and reflective Piece 140；The reflecting piece 140, light guide plate 130 and quantum dot diaphragm 120 stack setting successively from top to bottom；The backlight is set Put the incident side in the light guide plate 130.

Certainly, the quantum dot backlight module can also include：Overlay the optics of 120 upper surface of quantum dot diaphragm Diaphragm 110.The liquid crystal display panel 100 is covered on the optical diaphragm 110.

The quantum dot backlight module further includes glue frame 150 and backboard（It is not shown in figure）, the backlight, reflecting piece 140th, light guide plate 130, quantum dot diaphragm 120 and optical diaphragm 110 are arranged in the glue frame 150.The glue frame 150 is set In the backboard.The backboard is preferably metal backing.

Further, the quantum dot diaphragm 120 includes main body 121 and the extension positioned at the opposite both ends of main body 121 122, the main body 121 of the quantum dot diaphragm overlays the upper surface of the light guide plate 130, and an extension 122 is relative to institute Main body 121 is stated to bend（Specially bend downward）It is arranged on the incident side of the light guide plate 130 afterwards, another 122 phase of extension The main body 121 is bent（Specially bend downward）After set（Preferably it is bonded）In 130 incident side of light guide plate Oncoming lane.The quantum dot diaphragm edge easily to fail in cutting process is set on the glue frame by the backlight module of the present invention Between 150 and light guide plate 130, both do not interfered with the light guide plate 130 enters light and light extraction, in turn avoids going out for light guide plate 130 The quantum dot film of smooth surface marginal portion fails and influences display device and show picture effect.

Structure existing for the quanta point material of the present invention is described in detail below：

Specifically, as shown in Fig. 2, the present invention provides a kind of quanta point material with funnel type level structure, positioned at described Quantum-dot structure unit alloy constituent inside quanta point material corresponds to level width and is less than positioned at external quantum dot knot Structure unit alloy constituent corresponds to level width；Specifically, quanta point material provided by the invention include it is at least one The quantum-dot structure unit arranged successively in the radial direction, the quantum-dot structure unit are wide for more outside energy level in the radial direction The wider graded alloy component structure of degree, and the quantum-dot structure unit of graded alloy component structure adjacent in radial directions Energy level be continuous；The structure of quanta point material shown in Fig. 2 is known as concrete structure 1 in subsequent embodiment.Quantum in Fig. 2 Point material, the level width of each adjacent quantum-dot structure unit have continuous structure, i.e., each adjacent quantum-dot structure The level width of unit has the characteristics that consecutive variations rather than mutation structure, that is to say, that the synthesis component of quantum dot is also tool There is continuity, subsequent continuous structure principle is identical.

Further, in radial directions in adjacent quantum-dot structure unit, by paracentral quantum-dot structure unit Level width is less than the level width of deep quantum-dot structure unit；That is, in the quanta point material, from The level width of center to face gradually broadens, so as to form the funnel type structure that opening becomes larger, opening therein It becomes larger and refers in level structure as shown in Figure 1, the energy level from quanta point material center to quanta point material surface is to connect Continuous.Meanwhile the quanta point material in the present invention, the energy level of each adjacent quantum-dot structure unit are continuous, that is, Saying the synthesis component of quantum dot also has the characteristic of consecutive variations, and this characteristic is more advantageous to realizing high luminous efficiency.

That is, the concrete structure 1 of the quanta point material be with from inside to outside radially it is continuous gradually Become the quantum-dot structure of alloy compositions；This quantum-dot structure has radially continuous from inside to outside become in constituent The characteristics of change；Correspondingly, energy level distribution on also on there are from inside to outside radially consecutive variations；This quantum Point structure in constituent and energy level distribution on consecutive variations the characteristics of, relative to quantum dot core and shell with clear and definite boundary Relationship, quanta point material of the invention not only contributes to realize more efficient luminous efficiency, while also can more meet semiconductor The comprehensive performance requirement of device and corresponding display technology to quanta point material, is a kind of suitable semiconductor devices and display technology Preferable quantum dot luminescent material.

Further, in the quanta point material provided such as Fig. 2, the alloy compositions of A points are Cd_x0 ^AZn_1-x0 ^ASe_y0 ^AS_1-y0 ^A, B The alloy compositions of point are Cd_x0 ^BZn_1-x0 ^BSe_y0 ^BS_1-y0 ^B, wherein A points relative to B points closer to quanta point material center, and A points and The composition of B points meets：_x0 ^A≥_x0 ^B,_y0 ^A ≥_y0 ^B.That is, for any two points A points and B points in quanta point material, and A Point is relative to B points closer to quanta point material center, then_x0 ^A≥_x0 ^B,_y0 ^A ≥_y0 ^B, i.e. the Cd that the Cd contents of A points are more than B points contains Amount, the Zn contents of A points are less than the Zn contents of B points, and the Se contents of A points are more than the Se contents of B points, and the S contents of A points are less than the S of B points Content.In this way, in the quanta point material, grading structure is just formd in radial directions, and due in radial directions, It is more outside（I.e. far from quanta point material center）Then Cd and Se contents are lower, Zn and S contents are higher, then according to these types of element Characteristic, level width will be wider.

In the quanta point material of follow-up difference concrete structure, if quantum-dot structure unit is more outside energy level in the radial direction The wider graded alloy component structure of width, then its alloy compositions be both preferably Cd_x0Zn_1-x0Se_y0S_1-y0, wherein, the alloy of A points Component is Cd_x0 ^AZn_1-x0 ^ASe_y0 ^AS_1-y0 ^A, the alloy compositions of B points are Cd_x0 ^BZn_1-x0 ^BSe_y0 ^BS_1-y0 ^B, wherein A points relative to B points more Close to quanta point material center, and the composition of A points and B points meets：_x0 ^A>_x0 ^B,_y0 ^A >_y0 ^B.If quantum-dot structure unit is radial direction side The upward narrower graded alloy component structure of more outside level width, then its alloy compositions be both preferably Cd_x0Zn_1-x0Se_y0S_1-y0, Wherein, the alloy compositions of C points are Cd_x0 ^CZn_1-x0 ^CSe_y0 ^CS_1-y0 ^C, the alloy compositions of D points are Cd_x0 ^DZn_1-x0 ^DSe_y0 ^DS_1-y0 ^D, wherein C It puts relative to D points closer to quanta point material center, and the composition of C points and D points meets：_x0 ^C＜_x0 ^D,_y0 ^C＜_y0 ^D.If quantum dot knot Structure unit is uniform alloy compositions structure（I.e. level width is consistent in the radial direction）, then its alloy compositions be both preferably Cd_x0Zn_1-x0Se_y0S_1-y0, wherein, the alloy compositions of E points are Cd_x0 ^EZn_1-x0 ^ESe_y0 ^ES_1-y0 ^E, the alloy compositions of F points are Cd_x0 ^FZn_1-x0 ^FSe_y0 ^FS_1-y0 ^F, wherein E points expire relative to F points closer to quanta point material center, and the composition of E points and F points Foot：_x0 ^E=_x0 ^F,_y0 ^E=_y0 ^F。

Further, as shown in figure 3, having inner alloy constituent the present invention also provides one kind, to correspond to level width little It is corresponded between level width and quantum-dot structure bosom and most external region containing at least one layer in exterior alloy constituent The quanta point material of the quantum-dot structure unit of uniform alloy compositions structure；That is, quanta point material provided by the invention The quantum-dot structure unit arranged successively in radial directions including at least three, wherein, at least three quantum-dot structure In unit, the quantum-dot structure unit positioned at center and surface is that the gradual change that more outside level width is wider in the radial direction is closed Golden component structure, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous , a quantum-dot structure unit between center and the quantum-dot structure unit on surface is uniform alloy compositions structure. The structure of quanta point material shown in Fig. 3 is known as concrete structure 2 in subsequent embodiment.

Specifically, as Fig. 3 provide quanta point material in, it is described between center and the quantum-dot structure unit on surface One layer of uniform alloy compositions structure quantum-dot structure unit on, the alloy compositions of any point are Cd_x1Zn_1-x1Se_y1S_1-y1, In 0≤x1≤1,0≤y1≤1, and be 0 during x1 with y1 differences and be asynchronously 1, and x1 and y1 is fixed value.It is such as a certain The alloy compositions of point are Cd_0.5Zn_0.5Se_0.5S_0.5, and the alloy compositions of another point also should be in the radial direction Cd_0.5Zn_0.5Se_0.5S_0.5；In another example in the quantum-dot structure unit of a certain uniform alloy compositions structure certain point homogeneous components For Cd0.7Zn0.3S, and the alloy compositions of another point also should be Cd0.7Zn0.3S in the quantum-dot structure unit；In another example certain The homogeneous components of certain point are CdSe in the quantum-dot structure unit of one uniform alloy compositions structure, and the quantum-dot structure unit The alloy compositions of interior another point also should be CdSe.

Further, as in the quanta point material of Fig. 3 offers, the quantum-dot structure unit positioned at center and surface is radially The wider graded alloy component structure of more outside level width on direction, and graded alloy component knot adjacent in radial directions The energy level of the quantum-dot structure unit of structure is continuous；I.e. in the quantum-dot structure unit with graded alloy component structure In, radially the corresponding level width of alloy constituent of upper any point is greater than adjacent and closer to quantum dot The corresponding level width of alloy constituent of structure centre another point.The quantum dot knot with graded alloy component structure Alloy compositions composition in structure unit is Cd_x2Zn_1-x2Se_y2S_1-y2, wherein 0≤x2≤1,0≤y2≤1, and x2 and y2 differences When be 0 and be asynchronously 1.Such as the alloy compositions of certain point are Cd0.5Zn0.5Se0.5S0.5, and the alloy compositions of another point For Cd0.3Zn0.7Se0.4S0.6.

Further, as shown in figure 4, the present invention also provides a kind of quantum of the full graded alloy component with quantum well structure Point material；That is, quanta point material provided by the invention includes two kinds of quantum-dot structure unit（A1 types and A2 Type）, the wherein quantum-dot structure unit of A1 types is the wider graded alloy component of more outside level width in the radial direction Structure, the quantum-dot structure unit of A2 types is the narrower graded alloy component structure of more outside level width in the radial direction, Described two quantum-dot structure units are radially alternately distributed successively, and quantum-dot structure list adjacent in radial directions The energy level of member is continuous.That is, the quantum-dot structure cell distribution of the quanta point material can be：A1、A2、A1、 A2, A1 ... or A2, A1, A2, A1, A2 ..., that is, the quantum-dot structure unit originated can be A1 types or A2 types.In the quantum-dot structure unit of A1 types, level width is more more outside wider, in the quantum-dot structure of A2 types In unit, level width is more more outside narrower, both level structures are like the form of wave is prolonged in radial directions It stretches, the structure of quanta point material shown in Fig. 4 is known as concrete structure 3 in subsequent embodiment.

Further, as shown in figure 5, the present invention also provides a kind of full graded alloys of the quantum well structure with energy level mutation The quanta point material of component, specifically, the quantum-dot structure unit be in the radial direction more outside level width it is wider Graded alloy component structure, and adjacent quantum-dot structure unit is discontinuous, i.e., each adjacent quantum-dot structure unit Level width there is discontinuous variation, that is, be mutated feature, that is to say, that the alloy compositions of quantum dot be also have it is prominent Denaturation, subsequent mutation structure principle are identical；The structure of quanta point material shown in Fig. 5 is known as concrete structure in subsequent embodiment 4。

Specifically, the quanta point material described in Fig. 5 is arranged successively by way of mutation by multiple quantum-dot structure units Cloth is formed, these quantum-dot structure units are the graded alloy component structure that more outside level width is wider in the radial direction. Further, in the quanta point material, it is less than deep quantum by the level width of paracentral quantum-dot structure unit The level width of point structural unit.It is gradual from the level width of center to face that is, in the quanta point material It broadens, so as to the funnel type structure that the opening for forming interruption becomes larger, certainly, in the quanta point material, also not It is limited to aforesaid way, i.e., the level width of deep quantum-dot structure unit might be less that by paracentral quantum dot knot The level width of structure unit, in this structure, the level width of adjacent quantum-dot structure unit has the place being overlapping.

Further, as shown in fig. 6, the full gradual change the present invention also provides another quantum well structure that there is energy level to be mutated is closed The quanta point material of golden component, specifically, the quantum-dot structure unit be in the radial direction more outside level width it is narrower Graded alloy component structure, and the energy level of adjacent quantum-dot structure unit is discontinuous, i.e., each adjacent quantum dot The level width of structural unit has the characteristics that discontinuous variation, that is, is mutated feature, that is to say, that the alloy compositions of quantum dot It is with mutability, subsequent mutation structure principle is identical；The structure of quanta point material shown in Fig. 6 is known as in subsequent embodiment Concrete structure 5.

Specifically, the quanta point material described in Fig. 6 is arranged successively by way of mutation by multiple quantum-dot structure units Cloth is formed, these quantum-dot structure units are the graded alloy component structure that more outside level width is narrower in the radial direction. Further, in the quanta point material, it is more than deep quantum by the level width of paracentral quantum-dot structure unit The level width of point structural unit.It is gradual from the level width of center to face that is, in the quanta point material Narrow, so as to form the gradually smaller funnel type structure of the opening of interruption, certainly, in the quanta point material, also not It is limited to aforesaid way, i.e., the level width of deep quantum-dot structure unit can also be more than by paracentral quantum dot knot The level width of structure unit, in this structure, the level width of adjacent quantum-dot structure unit has the place being overlapping.

Further, as shown in fig. 7, the present invention also provides a kind of quanta point material, inside the quanta point material The level width of alloy constituent is become larger by center to outside, and quantum-dot structure most external region is uniform alloy group Point；Specifically, the quanta point material includes two amounts point structural unit（A3 types and A4 types）, wherein, A3 types Quantum-dot structure unit is the wider graded alloy component structure of more outside level width in the radial direction, the quantum dot of A4 types Structural unit is uniform alloy compositions structure, and the inside of the quanta point material includes one or more graded alloy group The quantum-dot structure unit of separation structure, and the quantum-dot structure unit of graded alloy component structure adjacent in radial directions Energy level is continuous；The outside of the quanta point material includes the quantum dot of one or more uniform alloy compositions structure Structural unit；The structure of quanta point material shown in Fig. 7 is known as concrete structure 6 in subsequent embodiment.

Specifically, in quanta point material as shown in Figure 7, quantum-dot structure unit is distributed as A3 ... A3A4 ... A4, The inside of i.e. described quanta point material is made of the quantum-dot structure unit of A3 types, the outside of the quanta point material be by The quantum-dot structure unit composition of A4 types, and the quantum-dot structure of the quantity of the quantum-dot structure unit of A3 types and A4 types The quantity of unit is all higher than being equal to 1.

Further, as shown in figure 8, the present invention also provides another quanta point material, inside the quanta point material Alloy constituent level width to be uniform, the level width of the alloy constituent outside the quantum dot by Center is to outside to become larger；Specifically, the quanta point material includes two amounts point structural unit（A5 types and A6 classes Type）, wherein, the quantum-dot structure unit of A5 types is uniform alloy compositions structure, and the quantum-dot structure unit of A6 types is diameter The wider graded alloy component structure of more outside level width on direction, the inside of the quanta point material include one or one The quantum-dot structure unit of a above uniform alloy compositions structure；The outside of the quanta point material include one or one with On graded alloy component structure quantum-dot structure unit, and the amount of graded alloy component structure adjacent in radial directions The energy level of son point structural unit is continuous；The structure of quanta point material shown in Fig. 8 is known as concrete structure in subsequent embodiment 7。

Specifically, in quanta point material as shown in Figure 8, monoatomic layer is distributed as A5 ... A5A6 ... A6 is that is, described The inside of quanta point material is made of the quantum-dot structure unit of A5 types, and the outside of the quanta point material is by A6 types Quantum-dot structure unit composition, and the quantum-dot structure unit of the quantity and A6 types of the quantum-dot structure unit of A5 types Quantity is all higher than being equal to 1.

Further, quantum-dot structure unit provided by the present invention includes 2-20 layers of monoatomic layer.Preferably, the amount Son point structural unit includes 2-5 monoatomic layer, and the preferred number of plies can ensure that quantum dot realizes good photoluminescence quantum yield And efficient charge injection efficiency.

Further, the quantum dot light emitting unit includes 1-10 layer crystals born of the same parents layer, preferably 2-5 layer crystals born of the same parents layer；The structure cell layer For minimum structural unit, i.e., its alloy compositions of each layer of structure cell layer are fixed, i.e., have the phase isomorphous in each structure cell layer Lattice parameter and element, the closed unit cell curved surface that each quantum-dot structure unit is the connection of structure cell layer and forms, adjacent cell layer Between level width have continuous structure or mutation structure.

The quanta point material of the present invention using the above structure, the photoluminescence quantum yield that can be realized ranging from 1% to 100%, Preferred photoluminescence quantum yield ranging from 30% to 100% can ensure the good of quantum dot in the range of preferred photoluminescence quantum yield Good application.

The quanta point material, wherein, the glow peak wave-length coverage of the quanta point material is received for 400 nanometers to 700 Rice.

The quanta point material of the present invention using the above structure, the glow peak wave-length coverage that can be realized are 400 nanometers to 700 Nanometer, preferred glow peak wave-length coverage are 430 nanometers to 660 nanometers, and preferred quantum dot light emitting peak wave-length coverage can protect Demonstrate,prove photoluminescence quantum yield of the realization more than 30% within this range of quantum dot diaphragm 120.

Further, in the present invention, the peak width at half height of the glow peak of the quanta point material is 12 nanometers to 80 nanometers.

Quantum dot diaphragm 120 and its quanta point material provided by the present invention have the advantages that：First, contribute to The lattice tension between the quantum dot crystal of different-alloy component is reduced to the full extent and alleviates lattice mismatch, so as to reduce boundary The formation of planar defect improves the luminous efficiency of quantum dot.Second, what quantum dot diaphragm 120 provided by the present invention was formed Level structure is more advantageous to effective constraint to electron cloud in quantum dot, and the diffusion for greatly reducing electron cloud to quantum dot surface is several Rate so as to which the auger recombination of quantum dot radiationless transition greatly be inhibited to lose, reduces quantum dot and flickers and improve quantum dot Luminous efficiency.The raising of quantum dot light emitting efficiency effectively raises brightness and the colour gamut of display device.

The present invention also provides a kind of preparation method of the quanta point material of quantum dot diaphragm 120 as described above, wherein, packet Include step：

The first compound is synthesized in pre-position；

Second of compound, the first described compound and second of compound are synthesized on the surface of the first compound Alloy compositions are identical or different；

Make cation exchange reaction formation quanta point material, the amount occur between the first compound and second of chemical combination object Son point glow peak wavelength occur blue shift, red shift and it is constant in it is one or more.

Quantum dot SILAR synthetic methods incorporating quantum point one-step synthesis is generated quantum dot, tool by the preparation method of the present invention Body is using quantum dot successively grows and forms graded component transitional crust using quantum dot one-step synthesis.I.e. in precalculated position Place, which is successively formed two layers, has identical or different-alloy component compound thin film, and sun occurs between two layers of compound by making Ion-exchange reactions is distributed so as to fulfill in the alloy compositions of pre-position.Repeating above procedure can constantly realize in diameter It is distributed to the alloy compositions of direction pre-position.

Described the first compound and second of compound can be binary or binary more than compound.

Further, when blue shift occurs in the glow peak wavelength of the quantum dot, illustrate that glow peak is moved to shortwave direction, energy Level width broadens；When red shift occurs in the glow peak wavelength of the quantum dot, represent glow peak and moved to long wave direction, energy level is wide Degree narrows；When the glow peak wavelength of the quantum dot is constant, illustrate that level width is constant.

The cationic presoma of the first described compound and/or second of compound includes：The presoma of Zn, institute The presoma for stating Zn is zinc methide（dimethyl Zinc）, diethyl zinc（diethyl Zinc）, zinc acetate（Zinc acetate）, zinc acetylacetonate（Zinc acetylacetonate）, zinc iodide（Zinc iodide）, zinc bromide（Zinc bromide）, zinc chloride（Zinc chloride）, zinc fluoride（Zinc fluoride）, zinc carbonate（Zinc carbonate）、 Zinc cyanide（Zinc cyanide）, zinc nitrate（Zinc nitrate）, zinc oxide（Zinc oxide）, zinc peroxide（Zinc peroxide）, zinc perchlorate（Zinc perchlorate）, zinc sulfate（Zinc sulfate）, zinc oleate（Zinc oleate） Or zinc stearate（Zinc stearate）At least one of Deng, but not limited to this.

The cationic presoma of the first described compound and/or second of compound includes the presoma of Cd, institute The presoma for stating Cd is dimethyl cadmium（dimethyl cadmium）, diethyl cadmium（diethyl cadmium）, cadmium acetate （cadmium acetate）, acetylacetone,2,4-pentanedione cadmium（cadmium acetylacetonate）, cadmium iodide（cadmium iodide）、 Cadmium bromide（cadmium bromide）, caddy（cadmium chloride）, cadmium fluoride（cadmium fluoride）, carbon Sour cadmium（cadmium carbonate）, cadmium nitrate（cadmium nitrate）, cadmium oxide（cadmium oxide）, perchloric acid Cadmium（cadmium perchlorate）, cadmium phosphate（cadmium phosphide）, cadmium sulfate（cadmium sulfate）, oil Sour cadmium（cadmium oleate）Or cadmium stearate（cadmium stearate）At least one of Deng, but not limited to this.

The anion presoma of the first described compound and/or second of compound includes the presoma of Se, example As Se with some organic matters arbitrarily combines formed compound, specifically Se-TOP (selenium- trioctylphosphine)、Se-TBP (selenium-tributylphosphine)、Se-TPP (selenium- triphenylphosphine)、Se-ODE (selenium-1-octadecene)、Se-OA (selenium-oleic acid)、Se-ODA (selenium-octadecylamine)、Se-TOA (selenium-trioctylamine)、Se- In ODPA (selenium-octadecylphosphonic acid) or Se-OLA (selenium-oleylamine) etc. At least one, but not limited to this.

The anion presoma of the first described compound and/or second of compound includes the presoma of S, such as S arbitrarily combines formed compound, specifically S-TOP (sulfur-trioctylphosphine), S- with some organic matters TBP(sulfur-tributylphosphine) 、S-TPP(sulfur-triphenylphosphine)、S-ODE (sulfur-1-octadecene) 、S-OA (sulfur-oleic acid)、S-ODA(sulfur-octadecylamine)、 S-TOA (sulfur-trioctylamine), S-ODPA (sulfur-octadecylphosphonic acid) or S-OLA At least one of (sulfur-oleylamine) etc., but not limited to this；The presoma of the S is alkyl hydrosulfide (alkyl Thiol), the alkyl hydrosulfide is hexyl mercaptan (hexanethiol), spicy thioalcohol (octanethiol), decyl mercaptan (decanethiol), lauryl mercaptan (dodecanethiol), hexadecyl mercaptan (hexadecanethiol) or mercaptos At least one of propyl silane (mercaptopropylsilane) etc., but not limited to this.

The anion presoma of the first described compound and/or second of compound further includes the presoma of Te, The presoma of the Te is Te-TOP, Te-TBP, Te-TPP, Te-ODE, Te-OA, Te-ODA, Te-TOA, Te-ODPA or Te- At least one of OLA.

In the preparation process in accordance with the present invention, the condition that cation exchange reaction occurs is to carry out heating reaction, such as heat Temperature is between 100 DEG C to 400 DEG C, between preferred heating temperature is 150 DEG C to 380 DEG C.Heating time 2s to for 24 hours it Between, preferred heating time is 5min between 4h.

Above-mentioned cation precursor and anion presoma can form to determine to select it according to final nanocrystal One or more of：Such as it needs to synthesize Cd_xZn_1-xSe_yS_1-yNanocrystal when, then need the presoma of Cd, the forerunner of Zn Body, the presoma of Se, S presoma；If desired for synthesis Cd_xZn_1-xDuring the nanocrystal of S, then the presoma of Cd, Zn are needed The presoma of presoma, S；If desired for synthesis Cd_xZn_1-xDuring the nanocrystal of Se, then need the presoma of Cd, the presoma of Zn, The presoma of Se.

Heating temperature is higher, and the rate of cation exchange reaction is faster, the thickness range of cation exchange and exchange degree Also it is bigger, but thickness and extent and scope can progressively reach the degree of relative saturation；Similar, heating time is longer, and cation is handed over The thickness range and exchange degree changed is also bigger, but thickness and extent and scope can also progressively reach the degree of relative saturation.Sun from The thickness range and degree that son exchanges directly determine formed graded alloy component distribution.Cation exchange is formed gradually Become alloy compositions distribution also to be determined by the binary or the thickness of multi-element compounds nanocrystal that are respectively formed simultaneously.

When forming each layer compound, the molar ratio of cationic presoma and anion presoma can be 100:1 to 1: 50（The specially molar feed ratio of cation and anion）, such as when forming first layer compound, cationic presoma with The molar ratio of anion presoma is 100:1 to 1:50；When forming second layer compound, before cationic presoma and anion The molar ratio for driving body is 100:1 to 1:50, preferred ratio is 20:1 to 1:10, preferred cation presoma with before anion Driving the molar ratio of body can ensure reaction rate in easily controllable range.

By the quanta point material prepared by above-mentioned preparation method, glow peak wave-length coverage is received for 400 nanometers to 700 Rice, preferred glow peak wave-length coverage are 430 nanometers to 660 nanometers, and preferred quantum dot light emitting peak wave-length coverage can ensure Quantum dot realizes the photoluminescence quantum yield more than 30% within this range.

Quanta point material prepared by method made above, photoluminescence quantum yield ranging from 1% to 100% are preferred to shine Quantum yield ranging from 30% to 100% can ensure the applications well of quantum dot in the range of preferred photoluminescence quantum yield.

Other than the quanta point material of the present invention is prepared according to above-mentioned preparation method, the present invention also provides another such as The preparation method of the upper quanta point material, including step：

Pre-position adds in one or more kinds of cationic presomas in radial directions；It adds in simultaneously under certain condition One or more kinds of anion presomas, makes cationic presoma react forming quantum dot material with anion presoma Material, and there is blue shift and constant during the reaction in the glow peak wavelength of the quanta point material, so as to fulfill being pre-positioned Put the alloy compositions distribution at place.

The difference of such method and former approach is, former is successively to form two layers of compound, Ran Houfa Raw cation exchange reaction, is distributed so as to fulfill alloy compositions needed for the present invention, and later approach is directly controlled predetermined The synthesis cationic presoma of alloy compositions and anion presoma needed for being added at position carry out reaction and form quantum dot material Material, is distributed so as to fulfill alloy compositions needed for the present invention.For later approach, reaction principle is the high cation of reactivity Presoma and anion presoma first react, and occur after the low cationic presoma of reactivity and anion presoma anti- Should, and during the reaction, cation exchange reaction occurs for different cations, so as to fulfill alloy compositions needed for the present invention Distribution.It has been described in detail in preceding method as the type of cationic presoma and anion presoma.As for reaction temperature, instead Between seasonable and proportioning etc. can the quanta point material of synthesis according to needed for specific it is different and different, with aforementioned former side Method is substantially the same, and is subsequently illustrated with specific embodiment.

The present invention also provides the preparation method of different structure, the quanta point material of type, described in following examples.

Embodiment 1：Preparation based on CdZnSeS/CdZnSeS quantum dots

First the presoma of the presoma of cationic Cd, the presoma of cation Zn, the presoma of anion Se and anion S are noted Enter into reaction system, form Cd_yZn_1-ySe_bS_1-bLayer（Wherein 0≤y≤1,0≤b≤1）；Continue the forerunner of cationic Cd Body, the presoma of cation Zn, the presoma of anion Se and the presoma of anion S are injected into reaction system, above-mentioned Cd_yZn_1-ySe_bS_1-bLayer surface forms Cd_zZn_1-zSe_cS_1-cLayer（Wherein 0≤z≤1, and z is not equal to y, 0≤c≤1）；Certain Heating temperature and the reaction conditions such as heating time under, ectonexine nanocrystal occurs（I.e. above-mentioned two layers of compound）Middle Cd and Zn The exchange of ion；The probability migrated due to the limited and more remote migration distance of migration distance of cation with regard to smaller, It can be in Cd_yZn_1-ySe_bS_1-bLayer and Cd_zZn_1-zSe_cS_1-cThe near interface of layer forms the graded alloy component of Cd contents and Zn contents Distribution, i.e. Cd_xZn_1-xSe_aS_1-a, wherein 0≤x≤1,0≤a≤1.

Embodiment 2：Preparation based on CdZnS/CdZnS quantum dots

First the presoma of the presoma of cationic Cd, the presoma of cation Zn and anion S is injected into reaction system, It is initially formed Cd_yZn_1-yS layers（Wherein 0≤y≤1）；Continue by the presoma of cationic Cd, cation Zn presoma and it is cloudy from The presoma of sub- S is injected into reaction system, can be in above-mentioned Cd_yZn_1-yS layer surfaces form Cd_zZn_1-zS layers（Wherein 0≤z≤1, And z is not equal to y）；Under the reaction conditions such as certain heating temperature and heating time, ectonexine nanocrystal occurs（It is i.e. above-mentioned Two layers of compound）The exchange of middle Cd and Zn ions；Since the limited and more remote migration distance of the migration distance of cation is moved The probability of shifting, therefore can be in Cd with regard to smaller_yZn_1-yS layers and Cd_zZn_1-zS layers of near interface forms Cd contents and Zn contents gradually Become alloy compositions distribution, i.e. Cd_xZn_1-xS, wherein 0≤x≤1.

Embodiment 3：Preparation based on CdZnSe/CdZnSe quantum dots

First the presoma of the presoma of cationic Cd, the presoma of cation Zn and anion Se is injected into reaction system It is initially formed Cd_yZn_1-ySe layers（Wherein 0≤y≤1）；Continue the presoma and the moon of the presoma of cationic Cd, cation Zn The presoma of ion Se is injected into reaction system, can be in above-mentioned Cd_yZn_1-ySe layer surfaces form Cd_zZn_1-zSe layers（Wherein 0≤z ≤ 1, and z is not equal to y）；Under the reaction conditions such as certain heating temperature and heating time, Cd in ectonexine nanocrystal occurs With the exchange of Zn ions；The probability migrated due to the limited and more remote migration distance of migration distance of cation with regard to smaller, It therefore can be in Cd_yZn_1-ySe layers and Cd_zZn_1-zSe layers of near interface forms the graded alloy component point of Cd contents and Zn contents Cloth, i.e. Cd_xZn_1-xSe, wherein 0≤x≤1.

Embodiment 4：Preparation based on CdS/ZnS quantum dots

First the presoma of the presoma of cationic Cd and anion S is injected into reaction system, is initially formed CdS layer；Continuing will The presoma of cationic Zn and the presoma of anion S are injected into reaction system, can form ZnS layers on above-mentioned CdS layer surface； Under the reaction conditions such as certain heating temperature and heating time, the Zn cations of outer layer can gradual inner layer migration, and and Cd Cation exchange reaction occurs for cation, i.e. Cd ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation The probability that migrates of the limited and more remote migration distance of migration distance with regard to smaller, therefore can be in CdS layer and ZnS layers of interface Be formed about Cd contents it is radially outward gradually decrease, the radially outward graded alloy component gradually increased point of Zn contents Cloth, i.e. Cd_xZn_1-xS, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 0 from 1 monotone decreasing.

Embodiment 5：Preparation based on CdSe/ZnSe quantum dots

First the presoma of the presoma of cationic Cd and anion Se is injected into reaction system and is initially formed CdSe layers；Continuing will The presoma of cationic Zn and the presoma of anion Se are injected into reaction system, can form ZnSe in above-mentioned CdSe layer surfaces Layer；Under the reaction conditions such as certain heating temperature and heating time, the Zn cations of outer layer can gradual inner layer migration, and with Cation exchange reaction occurs for Cd cations, i.e. Cd ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to sun from The probability that the limited and more remote migration distance of migration distance of son migrates, therefore can be in CdSe layers and ZnSe layer with regard to smaller Near interface formed Cd contents it is radially outward gradually decrease, the radially outward graded alloy group gradually increased of Zn contents Distribution, i.e. Cd_xZn_1-xSe, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 0 from 1 monotone decreasing.

Embodiment 6：Preparation based on CdSeS/ZnSeS quantum dots

First the presoma of the presoma of cationic Cd, the presoma of anion Se and anion S is injected into reaction system It is initially formed CdSe_bS_1-bLayer（Wherein 0≤b≤1）；Continue by the presoma of cationic Zn, anion Se presoma and it is cloudy from The presoma of sub- S is injected into reaction system, can be in above-mentioned CdSe_bS_1-bLayer surface forms ZnSe_cS_1-cLayer（Wherein 0≤c≤1）； Under the reaction conditions such as certain heating temperature and heating time, the Zn cations of outer layer can gradual inner layer migration, and and Cd Cation exchange reaction occurs for cation, i.e. Cd ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation The probability that migrates of the limited and more remote migration distance of migration distance with regard to smaller, therefore can be in CdSe_bS_1-bLayer with ZnSe_cS_1-cThe near interface of layer formed Cd contents it is radially outward gradually decrease, Zn contents are radially outward gradually increases Graded alloy component distribution, i.e. Cd_xZn_1-xSe_aS_1-a, wherein 0≤x≤1 and x is from inside to outside（Radial direction）From 1 monotone decreasing It is 0,0≤a≤1.

Embodiment 7：Preparation based on ZnS/CdS quantum dots

First the presoma of the presoma of cationic Zn and anion S is injected into reaction system and is initially formed ZnS layers；Continuing will be positive The presoma of ion Cd and the presoma of anion S are injected into reaction system, can form CdS layer in above-mentioned ZnS layer surfaces； Under the reaction conditions such as certain heating temperature and heating time, the Cd cations of outer layer can gradual inner layer migration, and with Zn sun Cation exchange reaction occurs for ion, i.e. Zn ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation The probability that the limited and more remote migration distance of migration distance migrates, therefore can be attached with the interface of CdS layer at ZnS layers with regard to smaller It is near formed Zn contents it is radially outward gradually decrease, the radially outward graded alloy component point gradually increased of Cd contents Cloth, i.e. Cd_xZn_1-xS, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 1 from 0 monotonic increase.

Embodiment 8：Preparation based on ZnSe/CdSe quantum dots

First the presoma of the presoma of cationic Zn and anion Se is injected into reaction system and is initially formed ZnSe layer；Continuing will The presoma of cationic Cd and the presoma of anion Se are injected into reaction system, can form CdSe on above-mentioned ZnSe layer surface Layer；Under the reaction conditions such as certain heating temperature and heating time, the Cd cations of outer layer can gradual inner layer migration, and with Cation exchange reaction occurs for Zn cations, i.e. Zn ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to sun from The probability that the limited and more remote migration distance of migration distance of son migrates, therefore can be in ZnSe layer and CdSe layers with regard to smaller Near interface formed Zn contents it is radially outward gradually decrease, the radially outward graded alloy group gradually increased of Cd contents Distribution, i.e. Cd_xZn_1-xSe, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 1 from 0 monotonic increase.

Embodiment 9：Preparation based on ZnSeS/CdSeS quantum dots

First the presoma of the presoma of cationic Zn, the presoma of anion Se and anion S is injected into reaction system It is initially formed ZnSe_bS_1-bLayer（Wherein 0≤b≤1）；Continue by the presoma of cationic Cd, anion Se presoma and it is cloudy from The presoma of sub- S is injected into reaction system, can be in above-mentioned ZnSe_bS_1-bLayer surface forms CdSe_cS_1-cLayer（Wherein 0≤c≤1）； Under the reaction conditions such as certain heating temperature and heating time, the Cd cations of outer layer can gradual inner layer migration, and and Zn Cation exchange reaction occurs for cation, i.e. Zn ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation The probability that migrates of the limited and more remote migration distance of migration distance with regard to smaller, therefore can be in ZnSe_bS_1-bLayer with CdSe_cS_1-cThe near interface of layer formed Zn contents it is radially outward gradually decrease, Cd contents are radially outward gradually increases Graded alloy component distribution, i.e. Cd_xZn_1-xSe_aS_1-a, wherein 0≤x≤1 and x are from inside to outside 1 from 0 monotonic increase, 0≤a≤ 1。

Embodiment 10：The preparation of blue quantum dot with concrete structure 1

It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)₂], 8 mL Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur Octadecylene presoma.

By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In, Obtain trioctylphosphine sulfide presoma.

By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1- Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil Sour cadmium presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, after reacting 10 min, by trioctylphosphine sulfide presoma and cadmium oleate presoma respectively with 3 mL/h and The rate of 10 mL/h is added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and nothing Product is dissolved, precipitated by water methanol repeatedly, is then centrifuged for purifying, and obtains the blue quantum dot with concrete structure 1（Cd_xZn_1- _xS）.

Embodiment 11：The preparation of green quantum dot with concrete structure 1

It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 8 mmol zinc acetates [Zn (acet)₂], 10 ML oleic acid（Oleic acid）It is placed in 100 mL three-necked flasks, 60 min of vacuum outgas is carried out at 80 DEG C.Then it is cut It changes under nitrogen atmosphere, and in preservation at this temperature in case for use.

By 2 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in the three of 4 mL Octyl group phosphine（Trio ctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.

By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 2 mL（Trioctylphosphine）In, Obtain trioctylphosphine sulfide presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three Octyl group phosphine presoma is rapidly injected in reaction system, first generates Cd_xZn_1-xSe_yS_1-y, after reacting 10 min, by the vulcanization of 2mL Tri octyl phosphine presoma is added dropwise to the rate of 8 mL/h in reaction system, until presoma has injected.After reaction, After reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains having tool The green quantum dot of body structure 1（Cd_xZn_1-xSe_yS_1-y/Cd_zZn_1-zS）, prepared green quantum is represented before "/" herein The composition of the inside of point, "/" then represents the composition outside prepared green quantum dot below, and "/" representative is not It is apparent boundary, but the structure of gradual change from inside to outside, this quantum dot representation method meaning subsequently occurred are identical.

Embodiment 12：Red quantum dot with concrete structure 1（Structural unit）Preparation

It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)₂], 14 mL oleic acid（Oleic acid）It is placed in 100 mL three-necked flasks, 60 min of vacuum outgas is carried out at 80 DEG C.Then by it It switches under nitrogen atmosphere, and in preservation at this temperature in case for use.

By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4 mL（Trioctylphosphine）In, it obtains To selenizing tri octyl phosphine presoma.

By 0.2 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast Speed is injected into reaction system, first generates Cd_xZn_1-xSe, it is after reacting 10 min, selenizing tri octyl phosphine-vulcanization three of 2mL is pungent Base phosphine presoma is added dropwise to the rate of 4 mL/h in reaction system.After reaction, after reaction solution is cooled to room temperature, Product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains the red fluorescence quantum with concrete structure 1 Point（Cd_xZn_1-xSe_yS_1-y/CdzZn_1-zS）.

Embodiment 13：The influence that cadmium oleate charge velocity synthesizes the blue quantum dot with concrete structure 1

On the basis of embodiment 10, the graded of quantum dot component can be regulated and controled by the charge velocity for adjusting cadmium oleate Slope, so as to influence its level structure, the final regulation and control realized to quantum dot light emitting wavelength.

It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)₂], 8 mL oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xS, react 10 min after, by trioctylphosphine sulfide presoma with 3 mL/h rates by It is added dropwise in reaction system, while cadmium oleate presoma is added dropwise to different charge velocities in reaction system.Instead After answering, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains To the blue quantum dot with level structure 1（Cd_xZn_1-xS/Cd_yZn_1-yS）.

Based on identical quantum dot center（Alloy quantum dot glow peak 447nm）And the injection speed of different cadmium oleate presomas Under rate, quantum dot light emitting wavelength tuning control is listed as follows：

Embodiment 14：The influence that cadmium oleate injection rate synthesizes the blue quantum dot with concrete structure 1

On the basis of embodiment 10 and embodiment 13, by adjusting the injection rate of cadmium oleate presoma, quantum dot can be regulated and controled Ingredient graded section, so as to influence the variation of its level structure, the final tune realized to quantum dot light emitting wavelength Control.Based on identical quantum dot center（Alloy quantum dot glow peak 447nm）And the injection rate of different cadmium oleate presomas（It is identical 1 mmol/h under charge velocity）Under rate, quantum dot light emitting wavelength tuning control is listed as follows.

Embodiment 15：The preparation of blue quantum dot with concrete structure 2

It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)₂], 8 mL Oleic acid（Oleic acid）With 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xTemperature of reaction system after reacting 10 min, is down to 280 DEG C, then by 2mL by S Trioctylphosphine sulfide presoma and 6mL cadmium oleates presoma reaction is injected into the rate of 3 mL/h and 10mL/h simultaneously respectively In system.After injecting 40 min, temperature of reaction system is warming up to 310 DEG C, by 1mL trioctylphosphine sulfides presoma with 3 mL/h Rate be injected into reaction system, after reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol by product It dissolves, precipitate repeatedly, centrifugation purification obtains the blue quantum dot of concrete structure 2.

Embodiment 16：Green quantum dot with concrete structure 2（Structural unit）Preparation

It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 8 mmol zinc acetates [Zn (acet) 2], 10 ML oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）Be placed in 100 mL three-necked flasks, at 80 DEG C into 60 min of row vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

By 2 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in the three of 4mL Octyl group phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.

By 2mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 2mL（Trioctylphosphine）In, it obtains To trioctylphosphine sulfide presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three Octyl group phosphine presoma is rapidly injected in reaction system, first generates Cd_xZn_1-xSe_yS_1-y, after reacting 10 min, by reaction system temperature Degree is down to 280 DEG C, then by the trioctylphosphine sulfide presoma of 1.2mL and 6mL cadmium oleates presoma respectively with 2 mL/h and The rate of 10mL/h is injected into reaction system, until presoma has injected.Temperature of reaction system is warming up to 310 DEG C, by 0.8 ML trioctylphosphine sulfides presoma is injected into the rate of 2 mL/h in reaction system.After reaction, treat that reaction solution is cooled to After room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains the amount of green color with concrete structure 2 Sub- point.

Embodiment 17：The preparation of red quantum dot with concrete structure 2

It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)₂], 14 mL oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4mL（Trioctylphosphine）In, it obtains To selenizing tri octyl phosphine presoma.

By 0.2 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.

By 0.3 mmol cadmium oxides（CdO）, 0.3mL oleic acid（Oleic acid）With 2.7 mL octadecylenes（1- Octadecene）It is placed in 50 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil Sour cadmium presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast Speed is injected into reaction system, first generates Cd_xZn_1-xTemperature of reaction system after reacting 10 min, is down to 280 DEG C, then by Se By 1mL selenizings tri octyl phosphine-trioctylphosphine sulfide presoma and 3mL cadmium oleates presoma respectively with the speed of 2 mL/h and 6 mL/h Rate is injected into reaction system.Temperature of reaction system is warming up to 310 DEG C, before 1mL selenizings tri octyl phosphine-trioctylphosphine sulfide Body is driven to be injected into reaction system with the rate of 4 mL/h.After reaction, after reaction solution is cooled to room temperature, with toluene and nothing Product is dissolved, precipitated by water methanol repeatedly, and centrifugation purification obtains the red quantum dot with concrete structure 2.

Embodiment 18：Blue quantum dot with concrete structure 3（Structural unit）Preparation

By 0.2 mmol selenium powders（Selenium powder）It is dissolved in the tri octyl phosphine of 1 mL （Trioctylphosphine）In, obtain selenizing tri octyl phosphine presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xS, after reacting 10 min, by cadmium oleate presoma and trioctylphosphine sulfide presoma It is continuously injected into 20 min to reaction system with the rate of 0.6 mmol/h, 4 mmol/h respectively.Then by cadmium oleate presoma, Trioctylphosphine sulfide presoma and selenizing tri octyl phosphine presoma are respectively with 0.4 mmol/h, 0.6 mmol/h and 0.2 mmol/h Rate be continuously injected into 1 h to reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and without water beetle Product is dissolved, precipitated by alcohol repeatedly, and centrifugation purification is obtained with Quantum Well（Concrete structure 3）Blue quantum dot (CdZnS/CdZnS/CdZnSeS₃)。

Embodiment 19：The preparation of green quantum dot with concrete structure 3

It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 6 mmol zinc acetates [Zn (acet)₂], 10 ML oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）Be placed in 100 mL three-necked flasks, at 80 DEG C into 60 min of row vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

By 0.4 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in 4 mL's Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 1.

By 0.1 mmol selenium powders（Selenium powder）, 0.3 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 2.

By 0.8 mmol sulphur powders（Sulfur powder）, 0.8 mmol selenium powders（Selenium powder）It is dissolved in 3 mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 3.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three Octyl group phosphine presoma 1 is rapidly injected in reaction system, first generates Cd_xZn_1-xSeyS_1-y, after reacting 5 min, by the selenizing of 2mL Tri octyl phosphine-trioctylphosphine sulfide presoma 2 is added dropwise to the rate of 6 mL/h in reaction system.Then, by the selenium of 3mL Change the cadmium oleate presoma of tri octyl phosphine-trioctylphosphine sulfide presoma 3 and 6mL respectively with 3 mL/h and 6 mL/h rates after It is continuous to be added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol by product It dissolves, precipitate repeatedly, centrifugation purification obtains the green quantum dot (CdZn with concrete structure 3₃SeS₃/Zn₄SeS₃/ Cd₃Zn₅Se₄S₄)。

Embodiment 20：The preparation of red quantum dot with concrete structure 3

By 0.9 mmol cadmium oxides（CdO）, 0.9 mL oleic acid（Oleic acid）With 8.1 mL octadecylenes（1- Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil Sour cadmium presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast Speed is injected into reaction system, first generates Cd_xZn_1-xSe, it is after reacting 10 min, selenizing tri octyl phosphine-vulcanization three of 2 mL is pungent Base phosphine presoma is added dropwise to the rate of 2 mL/h in reaction system.When being injected into 30 min, before the cadmium oleate of 3 mL Body is driven to be added dropwise in reaction system with 6 mL/h rates simultaneously.After reaction, after reaction solution is cooled to room temperature, first is used Product is dissolved, precipitated by benzene and absolute methanol repeatedly, and centrifugation purification obtains the red quantum dot with concrete structure 3 （Cd_xZn_1-xSe/ZnSe_yS_1-y/Cd_zZn_1-zSeS）.

Embodiment 21：The preparation of blue quantum dot with concrete structure 4

By 0.2mmol selenium powders（Selenium powder）It is dissolved in the tri octyl phosphine of 1mL（Trioctylphosphine） In, obtain selenizing tri octyl phosphine presoma.

By 0.6 mmol cadmium oxides（CdO）, 0.6mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1- Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil Sour cadmium presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xS, after reacting 10 min, by cadmium oleate presoma and selenizing tri octyl phosphine presoma It is continuously injected into 20 min to reaction system with the rate of 0.6 mmol/h, 0.6 mmol/h respectively.Then by cadmium oleate forerunner Body and trioctylphosphine sulfide presoma are continuously injected into the rate of 0.4 mmol/h and 6 mmol/h in 1h to reaction system respectively. After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification, It obtains with Quantum Well（Concrete structure 4）Blue quantum dot（CdZnS/CdZnSe/CdZnS）.

Embodiment 22：The preparation of green quantum dot with concrete structure 4

By 0.4 mmol selenium powders（Selenium powder）It is dissolved in the tri octyl phosphine of 2 mL （Trioctylphosphine）In, obtain selenizing tri octyl phosphine presoma.

By 0.8 mmol cadmium oxides（CdO）, 1.2 mL oleic acid（Oleic acid）With 4.8 mL octadecylenes（1- Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil Sour cadmium presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xS, after reacting 10 min, by cadmium oleate presoma and selenizing tri octyl phosphine presoma It is continuously injected into 40 min to reaction system with the rate of 0.6 mmol/h, 0.6 mmol/h respectively.Then by cadmium oleate forerunner Body and trioctylphosphine sulfide presoma are continuously injected into 1 h to reaction system with the rate of 0.4 mmol/h and 6 mmol/h respectively In.After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation carries It is pure, it obtains with Quantum Well（Concrete structure 4）Green quantum dot（CdZnS/CdZnSe/CdZnS）.

Embodiment 23：The preparation of red quantum dot with concrete structure 4

By 1.5 mmol selenium powders（Selenium powder）, 1.75 mmol sulphur powders（Sulfur powder）It is dissolved in 3mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 1.

By 1 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 2mL（Trioctylphosphine）In, it obtains To selenizing tri octyl phosphine presoma.

By 0.2 mmol selenium powders（Selenium powder）, 0.8 mmol sulphur powders（Sulfur powder）It is dissolved in 2mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 2.

By 3 mmol cadmium oxides（CdO）, 3mL oleic acid（Oleic acid）With 6 mL octadecylenes（1-Octadecene）It is placed in In 100 mL three-necked flasks, it is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent cadmium oleate presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three Octyl group phosphine presoma 1 is injected into reaction system, first generates Cd_xZn_1-xSe, after reacting 10 min, by the selenizing trioctylphosphine of 2 mL The cadmium oleate presoma of phosphine presoma and 3mL are added dropwise to the rate of 4 mL/h and 6 mL/h in reaction system respectively.Note When entering to 30 min, by the cadmium oleate presoma of selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 2 of 2mL and 3mL respectively with 2 mL/h and 3 mL/h rates are added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, toluene is used Product is dissolved repeatedly with absolute methanol, is precipitated, centrifugation purification obtains the red quantum dot of concrete structure 4（Cd_xZn_1-xSe/ CdZnSe/Cd_zZn_1-zSeS）.

Embodiment 24：The preparation of blue quantum dot with concrete structure 5

By 1 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur Octadecylene presoma.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xS, after reacting 10 min, by 3 mL trioctylphosphine sulfides presomas with 3 mL/h's Rate is continuously injected into 1h to reaction system, when trioctylphosphine sulfide presoma injects 20 min, by 2 mL cadmium oleate forerunners Body is injected into 6 mL/h in reaction system, when trioctylphosphine sulfide presoma injects 40 min, by 4 mL cadmium oleate forerunners Body is injected into 12 mL/h in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol Product is dissolved repeatedly, is precipitated, centrifugation purification is obtained with Quantum Well（Concrete structure 5）Blue quantum dot （CdZnS/ZnS/CdZnS）.

Embodiment 25：The preparation of green quantum dot with concrete structure 5

By 0.4 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in 4mL's Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 1.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three Octyl group phosphine presoma is rapidly injected in reaction system, first generates Cd_xZn_1-xSe_yS_1-y, after reacting 10 min, 3 mL are vulcanized three Octyl group phosphine presoma is continuously injected into the rate of 3 mL/h in 1h to reaction system, injects 20 in trioctylphosphine sulfide presoma During min, 2 mL cadmium oleates presomas are injected into 6 mL/h in reaction system, inject 40 in trioctylphosphine sulfide presoma During min, 4 mL cadmium oleates presomas are injected into 12 mL/h in reaction system.After reaction, treat that reaction solution is cooled to room Product with toluene and absolute methanol is dissolved, precipitated by Wen Hou repeatedly, and centrifugation purification is obtained with Quantum Well（Specifically Structure 5）Green quantum dot（CdZnSeS/ZnS/CdZnS）.

Embodiment 26：The preparation of red quantum dot with concrete structure 5

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast Speed is injected into reaction system, first generates Cd_xZn_1-xSe, after reacting 10 min, by trioctylphosphine sulfide presoma with 6 mmol/ The rate of h is continuously injected into 1h to reaction system, when S-TOP injects 20 min, by 0.2 mmol cadmium oleate presomas with 0.6 Mmol/h is injected into reaction system, when S-TOP injects 40 min, by 0.4 mmol cadmium oleates presoma with 1.2 mmol/h It is injected into reaction system.After reaction, it is with toluene and absolute methanol that product is repeatedly molten after reaction solution is cooled to room temperature Solution, precipitation, centrifugation purification, obtain with Quantum Well（Concrete structure 5）Red quantum dot（CdZnSe/ZnS/ CdZnS）.

Embodiment 27：The preparation of blue quantum dot with concrete structure 6

It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet) 2], 8 mL Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted Enter into reaction system, first generate Cd_xZn_1-xS, after reacting 10 min, by trioctylphosphine sulfide presoma and cadmium oleate presoma It is added dropwise in reaction system with the rate of 6mmol/h and 0.6 mmol/h respectively.After 30 min, temperature of reaction system is dropped To 280 DEG C, by remaining trioctylphosphine sulfide presoma and cadmium oleate presoma respectively with the speed of 6mmol/h and 0.6 mmol/h Rate is added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol by product It dissolves, precipitate repeatedly, centrifugation purification obtains the blue quantum dot with concrete structure 6（Cd_xZn_1-xS）.

Embodiment 28：The preparation of green quantum dot with concrete structure 6

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three Octyl group phosphine presoma is rapidly injected in reaction system, first generates Cd_xZn_1-xSeyS_1-y, after reacting 10 min, by reaction system Temperature is down to 280 DEG C, and trioctylphosphine sulfide presoma is added dropwise to the rate of 4 mL/h in reaction system.Reaction terminates Afterwards, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification is had The green quantum dot of concrete structure 6（Cd_xZn_1-xSe_yS_1-y/ZnS）.

Embodiment 29：The preparation of red quantum dot with concrete structure 6

Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast Speed is injected into reaction system, first generates Cd_xZn_1-xTemperature of reaction system after reacting 10 min, is down to 280 DEG C, by selenium by Se Change tri octyl phosphine-trioctylphosphine sulfide presoma to be added dropwise in reaction system with the rate of 4 mL/h.After reaction, it treats After reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains having specific The red quantum dot of structure 6（Cd_xZn_1-xSe/ZnSeS）.

Embodiment 30：The preparation of green quantum dot with concrete structure 7

It is prepared by the first presoma of cadmium oleate：By 1 mmol cadmium oxides（CdO）, 1 mL oleic acid（Oleic acid）With 5 mL octadecylenes （1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then it switches it to Into under nitrogen atmosphere, and in preservation at this temperature in case for use.

It is prepared by the second presoma of cadmium oleate：By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 for 250 DEG C under nitrogen atmosphere Mins obtains transparent the second presoma of cadmium oleate.

It is prepared by oleic acid zinc precursor：By 9 mmol zinc acetates [Zn (acet)₂], 7 mL oleic acid（Oleic acid）And 10 ML octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then It switches it under nitrogen atmosphere, and is heated to reflux preserving in case for use in lower 250 DEG C of nitrogen atmosphere.

Under nitrogen atmosphere, the first presoma of cadmium oleate is warming up to 310 DEG C, sulphur octadecylene presoma is rapidly injected Into reaction system, CdS is quickly generated, after reacting 10 mins, oleic acid zinc precursor is all injected into reaction system, then by 3 The trioctylphosphine sulfide presoma of mL and 6 the second presomas of mL cadmium oleates are noted simultaneously with the rate of 3 mL/h and 10 mL/h respectively Enter into reaction system.

After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, Centrifugation purification, obtains the blue quantum dot with Quantum Well.

Embodiment 31：The preparation of green quantum dot with concrete structure 7

It is prepared by cadmium oleate presoma：By 0.4 mmol cadmium oxides（CdO）, 1 mL oleic acid（Oleic acid）With 5 mL octadecylenes （1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then by it in nitrogen Atmosphere is enclosed lower 250 DEG C and is heated to reflux, and in preservation at this temperature in case for use.

By 0.4 mmol selenium powders（Selenium powder）, it is dissolved in the tri octyl phosphine of 4 mL （Trioctylphosphine）In, obtain selenizing tri octyl phosphine.

It is prepared by oleic acid zinc precursor：By 8 mmol zinc acetates [Zn (acet)₂], 9 mL oleic acid（Oleic acid）With 15 ML octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.In nitrogen Atmosphere encloses lower 250 DEG C and is heated to reflux 120 mins, obtains transparent oleic acid zinc precursor.

By 2 mmol sulphur powders（Sulfur powder）With 1.6 mmol selenium powders（Selenium powder）It is dissolved in 2 mL Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.

Under nitrogen atmosphere, cadmium oleate presoma is warming up to 310 DEG C, selenizing tri octyl phosphine presoma is rapidly injected Into reaction system, CdSe is quickly generated, after reacting 5 mins, oleic acid zinc precursor is all injected into reaction system, by 2 Selenizing tri octyl phosphine-trioctylphosphine sulfide presoma of mL is added dropwise to the rate of 2 mL/h in reaction system, until before Body is driven to have injected.After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is sunk It forms sediment, centrifugation purification obtains the green fluorescence quantum dot with Quantum Well.

Embodiment 32：The preparation of red quantum dot with concrete structure 7

It is prepared by cadmium oleate presoma：By 0.8 mmol cadmium oxides（CdO）, 4 mL oleic acid（Oleic acid）With 10 mL octadecylenes （1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then by it in nitrogen Atmosphere is enclosed lower 250 DEG C and is heated to reflux, and in preservation at this temperature in case for use.

It is prepared by oleic acid zinc precursor：12 mmol zinc acetates [Zn (acet)₂], 10 mL oleic acid（Oleic acid）With 10 ML octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.

By 0.8 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4 mL（Trioctylphosphine）In, Obtain selenizing tri octyl phosphine presoma.

By 1 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL's Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.

Under nitrogen atmosphere, cadmium oleate presoma is warming up to 310 DEG C, selenizing tri octyl phosphine presoma is rapidly injected Into reaction system, CdSe is quickly generated, after reacting 10 mins, oleic acid zinc precursor is all injected into reaction system, it will Selenizing tri octyl phosphine-trioctylphosphine sulfide presoma of 2 mL is added dropwise to the rate of 4 mL/h in reaction system.Reaction After, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains Red fluorescence quantum dot with Quantum Well.

Further, the quanta point material further includes polymer, prepolymer (pre-polymer), oligomer (oligomer), it is one or more in small molecule (small molecule), inorganic material.

Further, referring to Fig. 9, the quanta point material further includes matrix 124 and diffusion particle 125, the quantum Point structural unit（123、126）With 125 random dispersion of diffusion particle or be dispersed in the matrix 124.

The quantum-dot structure unit includes red quantum dot structural unit 126, green quantum dot structural unit 123 and indigo plant It is one or more in color quantum dot structural unit.In embodiment illustrated in fig. 9, the quantum-dot structure unit includes red quantum Point structural unit 126 and green quantum dot structural unit 123.The red quantum dot structural unit 126, green quantum-dot structure Unit 123 and diffusion particle 125 are dispersed in the matrix 124, specifically, three is in horizontal direction successively staggered row Row, are staggered successively in longitudinal direction.The quantum dot diaphragm 120 coordinates blue light backlight to use, and inspires feux rouges and green Light improves the colour gamut of backlight module and display device.

The matrix may include there are one or more organic or inorganic materials.In one embodiment, the matrix can wrap It includes：Polymer（For example, polystyrene, epoxy resin etc.）Or glass（For example, silica glass, ito glass etc.）Or gel （For example, Silica hydrogel）Or the material of other all-transparents/partially transparent, it is at least nanocrystalline for alloy semiconductor（Quantum dot knot Structure unit）The fluorescence bands sent out are transparent.The matrix does not have electrical conductance.Preferred matrix includes but is not limited to glass Glass, resin.In specific embodiment of the matrix for resin, the matrix can be a kind of oligomer or polymer form, Such as melmac, phenolic resin, alkyl resin, epoxy resin, polyurethane resin, maleic resin, polyamide resin Fat, polymethacrylates, polyacrylate, makrolon, polyethylene, pyrrolidones, hydroxyethyl cellulose, hydroxylmethyl cellulose The copolymer that the monomer of one kind or aforementioned resin in element is formed.

In other embodiments, the matrix can be photopolymerization resin, and photopolymerization resin includes olefin(e) acid or metering system Sour base resin, active vinyl groups or a kind of resin of smooth cross-coupling, generally comprise photosensitive Group, such as polyethylene cinnamic acid and similar.Certainly, thermosetting resin also can be selected in the host material.In certain embodiment In, matrix may include the resin material of some scatterers, metal or metal oxide particle, air bubble, glass, polymer microballoon （It is solid or hollow）And or other selectivity additives be commonly used in final use.

In certain embodiments, the quanta point material may include alloy semiconductor can be made nanocrystalline（Quantum-dot structure list Member）Disperse nonpolar liquid therein or polar liquid.

Based on the display device that above-described embodiment provides, the present invention also provides a kind of electronic equipment, including as described above Display device.Preferably, the electronic equipment be mobile phone, it is laptop, tablet computer, television set, display, wearable Formula shows one kind in equipment, can also be the equipment that other have used display device certainly, and the present invention does not repeat.

It, can according to the technique and scheme of the present invention and its hair it is understood that for those of ordinary skills Bright design is subject to equivalent substitution or change, and all these changes or replacement should all belong to the guarantor of appended claims of the invention Protect range.

Claims

1. a kind of quantum dot backlight module, including quantum dot diaphragm, which is characterized in that the material of the quantum dot diaphragm is quantum Point material, the quanta point material include at least one quantum-dot structure unit arranged successively in radial directions, the amount Son point structural unit is the graded alloy component structure of level width variation or in the radial direction level width one in the radial direction The homogeneous components structure of cause.

2. quantum dot backlight module according to claim 1, which is characterized in that the quantum dot backlight module further includes： Backlight, light guide plate and reflecting piece；The reflecting piece, light guide plate and quantum dot diaphragm stack setting successively from top to bottom；It is described Backlight is arranged on the incident side of the light guide plate.

3. quantum dot backlight module according to claim 2, which is characterized in that the quantum dot backlight module further includes： Overlay the optical diaphragm of the quantum dot diaphragm upper surface.

4. quantum dot backlight module according to claim 3, which is characterized in that the quantum dot backlight module further includes glue Frame, the backlight, reflecting piece, light guide plate, quantum dot diaphragm and optical diaphragm are arranged in the glue frame.

5. quantum dot backlight module according to claim 2, which is characterized in that the quantum dot diaphragm includes main body and position Extension in the opposite both ends of main body, the main body of the quantum dot diaphragm overlay the upper surface of the light guide plate, and one is prolonged Extending portion is arranged on the incident side of the light guide plate after being bent relative to the main body, another extension is curved relative to the main body The oncoming lane of the light guide plate incident side is arranged on after folding.

6. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quanta point material further includes poly- It closes one or more in object, prepolymer, oligomer, small molecule, inorganic material.

7. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quanta point material further includes base Matter, the quantum-dot structure unit random dispersion or is dispersed in the matrix.

8. quantum dot backlight module according to claim 7, which is characterized in that the quantum-dot structure unit includes red It is one or more in quantum-dot structure unit, green quantum dot structural unit and blue quantum dot structural unit.

9. quantum dot backlight module according to claim 7, which is characterized in that the quantum-dot structure unit includes red Quantum-dot structure unit and green quantum dot structural unit.

10. quantum dot backlight module according to claim 7, which is characterized in that the matrix include polymer, glass, One kind in gel.

11. quantum dot backlight module according to claim 7, which is characterized in that the matrix include melmac, Phenolic resin, alkyl resin, epoxy resin, polyurethane resin, maleic resin, polyamide, polymethylacrylic acid Ester, polyacrylate, makrolon, polyethylene, pyrrolidones, hydroxyethyl cellulose, hydroxymethyl cellulose and aforementioned resin Monomer formed copolymer.

12. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quantum-dot structure unit is The wider graded alloy component structure of more outside level width in the radial direction, and quantum-dot structure adjacent in radial directions The energy level of unit is continuous.

13. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quanta point material is included at least Three quantum-dot structure units arranged successively in radial directions, wherein, at least three quantum-dot structure units, in being located at The heart and the quantum-dot structure unit on surface are the graded alloy component structure that more outside level width is wider in the radial direction, and The energy level of the quantum-dot structure unit of adjacent graded alloy component structure is continuous in radial directions；Positioned at center and table A quantum-dot structure unit between the quantum-dot structure unit in face is homogeneous components structure.

14. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quanta point material includes two kinds The quantum-dot structure unit of type, the quantum-dot structure unit of one of which type for more outside level width in the radial direction more Wide graded alloy component structure, another type of quantum-dot structure unit are narrower for more outside level width in the radial direction Graded alloy component structure, the quantum-dot structure unit of described two types is radially alternately distributed, and successively in diameter The energy level of adjacent quantum-dot structure unit is continuous on direction.

15. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quantum-dot structure unit is The wider graded alloy component structure of more outside level width in the radial direction, and the energy level of adjacent quantum-dot structure unit is It is discontinuous.

16. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quantum-dot structure unit is The narrower graded alloy component structure of more outside level width in the radial direction, and the energy level of adjacent quantum-dot structure unit is It is discontinuous.

17. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quanta point material includes two kinds Quantum-dot structure unit, one of which quantum-dot structure unit are the wider graded alloy of more outside level width in the radial direction Component structure, another quantum-dot structure unit are homogeneous components structure, and the inside of the quanta point material includes one or one The quantum-dot structure unit of a above graded alloy component structure, and graded alloy component structure adjacent in radial directions The energy level of quantum-dot structure unit be continuous；The outside of the quanta point material includes one or more uniform group The quantum-dot structure unit of separation structure.

18. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quanta point material includes two kinds Quantum-dot structure unit, one of which quantum-dot structure unit are homogeneous components structure, and another quantum-dot structure unit is diameter The wider graded alloy component structure of more outside level width on direction, the inside of the quanta point material include one or one The quantum-dot structure unit of a above homogeneous components structure, the outside of the quanta point material is including one or more The quantum-dot structure unit of graded alloy component structure, and the quantum dot of graded alloy component structure adjacent in radial directions The energy level of structural unit is continuous.

19. quantum dot backlight module according to claim 1 or 2, which is characterized in that the quantum-dot structure unit is packet The graded alloy component structure or uniform alloy compositions structure of race containing II and VI races element.

20. quantum dot backlight module according to claim 1, which is characterized in that the quantum-dot structure unit includes 2- 20 layers of monoatomic layer or the quantum-dot structure unit include 1-10 layers of structure cell layer.

21. quantum dot backlight module according to claim 1, which is characterized in that the luminous spike of the quanta point material It is ranging from 400 nanometers to 700 nanometers long.

22. quantum dot backlight module according to claim 1, which is characterized in that the glow peak of the quanta point material Peak width at half height is 12 nanometers to 80 nanometers.

23. a kind of display device, which is characterized in that including the quantum dot backlight module as described in claim 1-22 any one And liquid crystal display panel, the liquid crystal display panel are arranged on the quantum dot backlight module.

24. a kind of electronic equipment, which is characterized in that including display device as claimed in claim 23.

25. electronic equipment according to claim 24, which is characterized in that the electronic equipment for mobile phone, laptop, One kind in tablet computer, television set, display, wearable display equipment.