CN108258568A - 一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源 - Google Patents
一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源 Download PDFInfo
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Abstract
一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，属于通信调制技术领域。至少包括磁致伸缩薄膜、相变材料薄膜、隔热层和防氧化层；磁致伸缩薄膜与相变材料薄膜叠加，且在两薄膜之间夹有隔热层，最上层磁致伸缩薄膜上还有防氧化层。使用简便，结构简单，能耗小，制作成本低廉。
Description
技术领域
本发明涉及一种电磁波辐射源，具体为一种靠相变材料的体积效应和磁致伸缩材料的磁致伸缩逆效应辐射出太赫兹光波，属于通信调制技术领域。
背景技术
太赫兹波(又称太赫兹辐射、THz波等)是频率0.3THz-30THz(波长约为10μm-1mm，光子能量约为1.2meV-120meV)的电磁波，它处于红外波与毫米波之间，是电磁波谱中一个很重要的波段。与传统光源相比，太赫兹波辐射源具有相干、低能、穿透力强等独特优异的性质，所以它在物理、化学、天文学、生命科学和医药科学等基础研究领域，以及有机分子检测、无损成像、分子电子学、新材料研究和雷达通讯方面有重要的应用前景。然而通常产生THz波的光子学和电子学方法都存在频率不可调、或工作温度低、或体积大、或价格昂贵的严重缺点，至今还没有一个较成熟的室温工作的微型固态廉价发射源。这一空白的填补将大幅推动THz技术的发展和应用。
相变材料是一种可以在晶态和非晶态之间来回变换的材料，通常用于存储器件。相变材料的物理性质在晶态时和非晶态时的差异巨大。例如常用相变材料GaSbTe-225(简称GST)的晶态时的密度是其非晶态时密度的1.06倍，产生所谓的体积效应。相变材料需要受外界激发进行相变。常用激发手段为激光辐射、通电流和退火炉退火。相变材料的相变速度超快，一般为10-9～10-12s。
磁致伸缩材料是一种磁致伸缩效应非常强的材料。将铁磁材料置于外磁场中时，铁磁材料会产生和磁场方向一致的形变。这种由外磁场导致的形变叫做磁致伸缩效应。常用磁致伸缩材料有Fe7Ga2B1(简称FGB)合金、Fe-Co合金等。磁致伸缩材料也适用于磁致伸缩逆效应，即当铁磁材料发生形变时，其磁导率将发生改变。
发明内容
为实现可调频率廉价小型固态发射源，本发明的技术方案为：
一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，至少包括磁致伸缩薄膜、相变材料薄膜、隔热层和防氧化层；磁致伸缩薄膜与相变材料薄膜叠加，且在两薄膜之间夹有隔热层，最上层磁致伸缩薄膜上还有防氧化层。
进一步地，前述一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，所述相变材料为能够使用激光激发或电激发，在晶态和非晶态之间来回变换的材料，进一步且体积效应明显。如相变材料GaSbTe-225(简称GST)。
更进一步地，前述一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其中通过调节所述相变材料的相变频率达到太赫兹级别来辐射出太赫兹光波。
更进一步地优选，前述一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其中通过调节所述磁致伸缩薄膜厚度是所要求太赫兹光半波长的整数倍。如Fe7Ga2B1(简称FGB)合金、Fe-Co合金等。优选相变材料薄膜的厚度为10nm-1微米。
进一步优选，隔热层和防氧化层均为Al2O3氧化层，厚度优选10nm-1微米。
进一步优选，还包括基底，在基底上为相变材料，相变材料上为隔热层，隔热层上为磁致伸缩薄膜，磁致伸缩薄膜上为防氧化层。
制备工艺：包括以下步骤：
(1)清洗基底，先后将基底置于丙酮、乙醇、异丙醇、甲醇等进行超声波清洗。之后用去离子水冲洗
(2)使用磁控溅射技术，在基底表面蒸镀相变薄膜层；
(3)将步骤(2)得到的相变薄膜层进行退火晶化；
(4)使用磁控溅射技术，在相变薄膜层上蒸镀中间隔热层；
(5)使用磁控溅射技术，在中间隔热层上蒸镀磁致伸缩薄膜层；
(6)使用磁控溅射技术，在磁致伸缩薄膜上蒸镀防氧化层；
(7)将该器件放入外磁场中，施加延FGB易磁化方向的磁场，使其磁化。
本发明上述技术方案投入应用后，其显著优点是：
仅通过两层薄膜即可完成光源的制作。使用简便，结构简单，能耗小，制作成本低廉。本发明使用激光或电流诱导相变薄膜不断进行相变。由于相变时的体积效应产生震荡波。之后震荡波传导至磁致伸缩薄膜，改变磁致伸缩薄膜局部磁导率从而使得其内部磁场变化，激发出太赫兹光。
附图说明
图1为本发明使用相变材料和磁致伸缩材料的薄膜太赫兹光源的结构示意图；
1为单晶硅或SiO2双面抛光基底；2为GST相变材料薄膜层；3为隔热层Al2O3层；4为FGB磁致伸缩材料薄膜层；5为防氧化层Al2O3层。
具体实施方式
下面结合实施例对本发明作进一步说明，但本发明并不限于以下实施例。
实施例1
如图1所示，这种使用相变材料和磁致伸缩材料的薄膜太赫兹光源由6部分组成。其中1为单晶硅或SiO2双面抛光基底。2为GST相变材料薄膜层。3为隔热层Al2O3层，用于隔热和保护GST。4为FGB磁致伸缩材料薄膜层。5为防氧化层Al2O3层，用于保护FGB不被氧化。
具体来看本发明的制作工艺：
1.清洗基底，先后将基底置于丙酮、乙醇、异丙醇、甲醇等进行超声波清洗。之后用去离子水冲洗
2.使用磁控溅射技术，在基底表面蒸镀GST相变薄膜层。控制蒸镀时间，使得薄膜厚度在50nm左右。
3.将基片加温到180℃，持续30分钟，实现GST退火晶化。
4.使用磁控溅射技术，在GST上蒸镀Al2O3氧化层，厚度为5nm。
5.使用磁控溅射技术，在Al2O3氧化层上蒸镀FGB磁致伸缩薄膜层。控制蒸镀时间，以控制薄膜厚度，使得FGB厚度为所需太赫兹光波波长的一半。
6.使用磁控溅射技术，在FGB等磁致伸缩薄膜上蒸镀Al2O3氧化层，厚度为5nm。
7.将该器件放入外磁场中，施加延FGB易磁化方向的磁场，使其磁化。
之后该薄膜使用激光或电流诱导相变薄膜不断进行相变，由于体积效应产生震荡波；之后震荡波传导至磁致伸缩薄膜，改变磁致伸缩薄膜局部磁导率从而产生其内部磁场变化，激发出电磁波。同时磁致伸缩也成为太赫兹波和震荡波的波导，实现太赫兹波的单模输出。
Claims (9)
1.一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，至少包括磁致伸缩薄膜、相变材料薄膜、隔热层和防氧化层；磁致伸缩薄膜与相变材料薄膜叠加，且在两薄膜之间夹有隔热层，最上层磁致伸缩薄膜上还有防氧化层；
相变材料为能够使用激光激发或电激发，在晶态和非晶态之间来回变换的材料。
2.按照权利要求1所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，相变材料为GaSbTe-225(简称GST)；磁致伸缩薄膜选自Fe7Ga2B1(简称FGB)合金、Fe-Co合金。
3.按照权利要求1所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，通过调节所述相变材料的相变频率达到太赫兹级别来辐射出太赫兹光波。
4.按照权利要求1所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，通过调节所述磁致伸缩薄膜厚度是所要求太赫兹光半波长的整数倍。
5.按照权利要求1所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，相变材料薄膜的厚度为10nm-1微米。
6.按照权利要求1所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，隔热层和防氧化层均为Al2O3氧化层。
7.按照权利要求6所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，隔热层和防氧化层厚度为10nm-1微米。
8.按照权利要求6所述的一种使用相变材料和磁致伸缩材料的薄膜太赫兹光源，其特征在于，还包括基底，在基底上为相变材料，相变材料上为隔热层，隔热层上为磁致伸缩薄膜，磁致伸缩薄膜上为防氧化层。
9.制备权利要求1-8任一项所述的使用相变材料和磁致伸缩材料的薄膜太赫兹光源的方法，其特征在于，包括以下步骤：
(1)清洗基底，先后将基底置于丙酮、乙醇、异丙醇、甲醇等进行超声波清洗。之后用去离子水冲洗
(2)使用磁控溅射技术，在基底表面蒸镀相变薄膜层；
(3)将步骤(2)得到的相变薄膜层进行退火晶化；
(4)使用磁控溅射技术，在相变薄膜层上蒸镀中间隔热层；
(5)使用磁控溅射技术，在中间隔热层上蒸镀磁致伸缩薄膜层；
(6)使用磁控溅射技术，在磁致伸缩薄膜上蒸镀防氧化层；
(7)将该器件放入外磁场中，施加延FGB易磁化方向的磁场，使其磁化。
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