CN108258125B - Method for improving performance of novel organic solar cell of interface recombination generated current carrier - Google Patents
Method for improving performance of novel organic solar cell of interface recombination generated current carrier Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
A method for improving the performance of a novel organic solar cell of carriers generated by interface recombination. The novel organic solar cell comprises a substrate anode, a hole transport layer, an organic light absorption layer 1, an organic light absorption layer 2, an electron transport layer and a cathode electrode from bottom to top. The organic light absorption layer is characterized in that an effective interface layer is interposed between the organic light absorption layer 1 and the organic light absorption layer 2, so that the interaction of excitons in the organic light absorption layer 1 and the organic light absorption layer 2 at the interface is effectively promoted, the generation of free carriers is facilitated, and the conversion efficiency of the battery is improved. The invention intervenes in C by using an interfacial layer Alq360And the organic solar cell made of the F16ZnPc material improves the conversion efficiency of the cell. Intervention of Alq3, increasing C60The excitons and the excitons of the F16ZnPc are interacted on the interface to obtain more free carriers, so that the current and the voltage of the cell are improved, and the conversion efficiency of the organic solar cell is finally improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for improving the conversion efficiency of a novel organic solar cell for obtaining free carriers by interface recombination by using an interface layer to intervene in an organic light absorption layer.
Background
Organic solar cells are favored by researchers due to the advantages of simple preparation, light weight, low cost and large-area production. At present, although the efficiency of organic solar cells has broken through the energy conversion efficiency of 13%, the efficiency of cells needs to be further improved for realizing industrialization. In order to further improve the efficiency of organic solar cells, it is important to understand the interfacial processes of such cells, including interfacial free carrier generation, exciton recombination, charge and exciton interaction, etc. Among these processes, the generation process of free carriers is very important. It is generally believed that for a cell with a p-n junction, the mechanism for free carrier generation is exciton dissociation at the interface. However, in 2010, the teaching of song group beam proposed a new mechanistic process: the generation of free carriers can also come from the interaction of interfacial excitons and excitons, a mechanism that is realized by using a novel cell composed of two n-type organic materials (Q.L. Song, et al, evaluation of harvesting electric conductivity byexsitionbinding in an n-n type solar cell, J. Am. chem. Soc., 132 (2010) 4554-4555.). This new free carrier cell has significant potential research value. On the one hand, the novel battery can theoretically provide a large Voc, and therefore, a high-efficiency battery is obtained. On the other hand, the novel battery brings a large potential window due to the difference between the two energy levels, and is expected to be used for improving the catalytic performance in catalysis. However, the generation process of free carriers of the novel solar cell is that excitons and excitons are generated together, so that the conversion efficiency of the solar cell is low at present. How to improve the conversion efficiency is a big research focus of the novel battery.
Disclosure of Invention
The invention aims to provide a method for improving the performance of a novel organic solar cell for generating carriers by interface recombination.
The technical scheme of the invention is realized as follows:
the method for improving the performance of the novel organic solar cell of the carrier generated by the interface recombination comprises the following steps:
firstly, cleaning a substrate; putting the patterned ITO glass into acetone, ethanol, isopropanol and deionized water, respectively performing ultrasonic treatment for 20 minutes, and then drying by using nitrogen for later use;
secondly, spin-coating a layer of PEDOT with the thickness of 39-41 nm on the solution, namely, baking PSS on the processed ITO substrate for 30 min at the temperature of 150 ℃; transferring the dried ITO substrate coated with PEDOT, PSS into a vacuum cavity to sequentially grow an active layer, an interface modification layer and an electrode;
thirdly, growing a 20 nm F16ZnPc film on the PEDOT, PSS at the speed of 0.7 nm/min;
fourthly, growing another n-type material C on the F16ZnPc layer60The growth rate is 1.5 nm/min, and the growth thickness is 50 nm;
fifthly, growing a layer of LiF cathode interface modification layer with the thickness of 1nm on the active layer, wherein the growth rate is 0.2 nm/min; the vacuum degree of the vacuum cavity is controlled to be 10 in general during the growth process of the materials-6 Pa below;
sixthly, finally growing an Al electrode with the thickness of 100 nm on the modification layer LiF, wherein the growth rate is 8 nm/min; the vacuum degree of the growth electrode is generally controlled below 8.5 x 10-5 Pa; the effective area of the battery is controlled to be 0.09 cm by adopting a mask plate2。
The method for improving the performance of the novel organic solar cell of the carrier generated by the interface recombination comprises the following steps:
firstly, cleaning a substrate; putting the patterned ITO glass into acetone, ethanol, isopropanol and deionized water, respectively performing ultrasonic treatment for 20 minutes, and then drying by using nitrogen for later use;
secondly, spin-coating a layer of PEDOT with the thickness of 39-41 nm on the solution, namely, baking PSS on the processed ITO substrate for 30 min at the temperature of 150 ℃; transferring the dried ITO substrate coated with PEDOT, PSS into a vacuum cavity to sequentially grow an active layer, an interface modification layer and an electrode;
thirdly, growing a 20 nm F16ZnPc film on the PEDOT, PSS at the speed of 0.7 nm/min;
fourthly, Alq3 with the growth thicknesses of 1nm, 5nm and 10 nm of the F16ZnPc film is used as a barrier layer, the thickness of Alq3 is controlled by a mask plate, and the growth rate is controlled at 0.5 nm/min;
fifthly, growing an n-type material C on the Alq3 layer60The growth rate is 1.5 nm/min, and the growth thickness is 50 nm;
sixthly, growing a layer of LiF cathode interface modification layer with the thickness of 1nm on the active layer, wherein the growth rate is 0.2 nm/min; the vacuum degree of the vacuum cavity is controlled to be 10 in general during the growth process of the materials-6 Pa below;
seventhly, finally growing an Al electrode with the thickness of 100 nm on the modification layer LiF, wherein the growth rate is 8 nm/min; the vacuum degree of the growth electrode is generally controlled below 8.5 x 10-5 Pa; the effective area of the battery is controlled to be 0.09 cm by adopting a mask plate2。
The beneficial effect of adopting above-mentioned technical scheme is:
the invention utilizes the HOMO energy level in C60And Alq3 between the HOMO levels of F16ZnPc intervenes as an interface layer in the organic light-absorbing layer, promoting C60The meson excitons and the excitons in the F16ZnPc interact at an organic interface to obtain more free carriers, so that the conversion efficiency of the organic solar cell is improved.
Drawings
Fig. 1 is a block diagram of an embodiment of a novel organic solar cell for increasing generation of carriers by interface recombination according to the present invention.
Fig. 2 is a block diagram of a second structure of the novel organic solar cell for improving the generation of carriers by interface recombination according to the present invention.
FIG. 3 is a graph showing I-V curves of organic solar cells manufactured in comparative example 1 and example 2.
Detailed Description
The invention is described in further detail below:
as shown in fig. 1 and 2, a novel organic solar cell includes an anode electrode, a hole transport layer, an organic light absorption layer 1, an organic interface layer, an organic light absorption layer 2, an electron transport layer, and a cathode electrode. The anode is formed by coating ITO, FTO or graphene on glass, the hole transport layer is MoO or PEDOT: PSS, the organic light absorption layer 1 is perfluoro zinc phthalocyanine (F16ZnPc) or F16CuPc, and the organic light absorption layer 2 is fullerene (C)60) Or PCBM, and the organic interface layer is Alq3 or TPD. The material of the electron transport layer uses common lithium fluoride (LiF), Alq3, ZnO or TiO2. The cathode material is selected from common metal aluminum (Al), calcium and magnesium.
The first embodiment is as follows:
the method for improving the performance of the novel organic solar cell of the carrier generated by the interface recombination comprises the following steps:
firstly, cleaning a substrate; putting the patterned ITO glass into acetone, ethanol, isopropanol and deionized water, respectively performing ultrasonic treatment for 20 minutes, and then drying by using nitrogen for later use;
in the second step, a 39nm-41nm layer of PEDOT: PSS (available from Heraeus) was spin coated onto the treated ITO substrate and baked at 150 ℃ for 30 min. Transferring the dried ITO substrate coated with PEDOT, PSS into a vacuum cavity to sequentially grow an active layer, an interface modification layer and an electrode;
thirdly, growing a 20 nm F16ZnPc (purchased from Sigma Aldrich) film on the PEDOT: PSS at the rate of 0.7 nm/min;
fourthly, growing another n-type material C on the F16ZnPc layer60(purchased from Sigma Aldrich) at a growth rate of 1.5 nm/min and a growth thickness of 50 nm;
fifthly, growing a layer of LiF cathode interface modification layer with the thickness of 1nm on the active layer, wherein the growth rate is 0.2 nm/min; the vacuum degree of the vacuum cavity is controlled to be 10 in general during the growth process of the materials-6 Pa below;
sixthly, finally growing an Al electrode with the thickness of 100 nm on the modification layer LiF, wherein the growth rate is 8 nm/min; the vacuum degree of the growth electrode is generally controlled below 8.5 x 10-5 Pa; the effective area of the battery is controlled to be 0.09 cm by adopting a mask plate2。
Through the above preparation process, the current of the organic solar cell is recorded as Alq3-0, and the current-voltage (I-V) graph 2 shows.
Example two:
the method for improving the performance of the novel organic solar cell of the carrier generated by the interface recombination comprises the following steps:
firstly, cleaning a substrate; putting the patterned ITO glass into acetone, ethanol, isopropanol and deionized water, respectively performing ultrasonic treatment for 20 minutes, and then drying by using nitrogen for later use;
in the second step, a 39nm-41nm layer of PEDOT: PSS (available from Heraeus) was spin coated onto the treated ITO substrate and baked at 150 ℃ for 30 min. Transferring the dried ITO substrate coated with PEDOT, PSS into a vacuum cavity to sequentially grow an active layer, an interface modification layer and an electrode;
thirdly, growing a 20 nm F16ZnPc (purchased from Sigma Aldrich) film on the PEDOT: PSS at the rate of 0.7 nm/min;
fourthly, Alq3 with the growth thicknesses of 1nm, 5nm and 10 nm respectively is used as a barrier layer for the growth of the F16ZnPc film, the thickness of Alq3 (Sigma Aldrich) is controlled by a mask plate, and the growth rate is controlled at 0.5 nm/min.
Fifthly, growing an n-type material C on the Alq3 layer60 (Sigma Aldrich), growth rate of 1.5 nm/min, growth thickness of 50 nm;
sixthly, growing a layer of LiF cathode interface modification layer with the thickness of 1nm on the active layer, wherein the growth rate is 0.2 nm/min; the vacuum degree of the vacuum cavity is controlled to be 10 in general during the growth process of the materials-6 Pa below;
seventhly, finally growing an Al electrode with the thickness of 100 nm on the modification layer LiF, wherein the growth rate is 8 nm/min; the vacuum degree of the growth electrode is generally controlled below 8.5 x 10-5 Pa. The effective area of the battery is controlled to be 0.09 cm by adopting a mask plate2。
The current-voltage (I-V) graph 2 of the batteries with Alq3 thicknesses of 1nm, 5nm and 10 nm is shown by the above preparation process and is respectively designated as Alq3-1, Alq3-5 and Alq 3-10.
The results obtained from the above embodiments 1, 2 are shown in fig. 2, and it can be seen that, when Alq3 intervenes between the organic light absorbing layer 1 and the organic light absorbing layer 2, the short-circuit current and the open-circuit voltage of the battery are both improved, increasing with the increase of the thickness of Alq3, obtaining an optimum value when increasing to 5nm, and further increasing the thickness of Alq3, the performance of the battery starts to decline. This is explained by the fact that with the introduction of Alq3, the interaction of the interfacial excitons and excitons (shown in fig. 2) is promoted, generating more free carriers, thereby improving the performance of the cell. However, if the thickness is further increased, the interface exciton and exciton are too far apart, which is not favorable for the interaction between the interface exciton and exciton, and the generated free carrier is reduced, resulting in the degradation of the battery performance.
Claims (1)
1. The method for improving the performance of the novel organic solar cell of the carrier generated by the interface recombination is characterized by comprising the following steps: it comprises the following steps:
firstly, cleaning a substrate; putting the patterned ITO glass into acetone, ethanol, isopropanol and deionized water, respectively performing ultrasonic treatment for 20 minutes, and then drying by using nitrogen for later use;
secondly, spin-coating a layer of PEDOT with the thickness of 39-41 nm on the solution, namely, baking PSS on the processed ITO substrate for 30 min at the temperature of 150 ℃; transferring the dried ITO substrate coated with PEDOT, PSS into a vacuum cavity to sequentially grow an active layer, an interface modification layer and an electrode;
thirdly, growing a 20 nm F16ZnPc film on the PEDOT, PSS at the speed of 0.7 nm/min;
fourthly, Alq3 with the growth thicknesses of 1nm, 5nm and 10 nm of the F16ZnPc film is used as a barrier layer, the thickness of Alq3 is controlled by a mask plate, and the growth rate is controlled at 0.5 nm/min;
fifthly, growing an n-type material C on the Alq3 layer60The growth rate is 1.5 nm/min, and the growth thickness is 50 nm;
sixthly, growing a layer of LiF cathode interface modification layer with the thickness of 1nm on the active layer, wherein the growth rate is 0.2 nm/min; the vacuum degree of the vacuum cavity is controlled to be 10 in general during the growth process of the materials-6 Pa below;
seventhly, finally growing an Al electrode with the thickness of 100 nm on the modification layer LiF, wherein the growth rate is 8 nm/min; the vacuum degree of the growth electrode is generally controlled below 8.5 x 10-5 Pa; the effective area of the battery is controlled to be 0.09 cm by adopting a mask plate2。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521261A (en) * | 2009-04-09 | 2009-09-02 | 西南大学 | Novel organic solar cell producing free carriers based on interface recombination |
| CN102694123A (en) * | 2011-03-22 | 2012-09-26 | 中国科学院长春应用化学研究所 | An organic semiconductor micro-nanocrystalline array, a preparation method thereof and application thereof in a photovoltaic cell |
| CN103219468A (en) * | 2013-04-12 | 2013-07-24 | 中南大学 | Order bulk phase heterojunction organic solar cell and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521261A (en) * | 2009-04-09 | 2009-09-02 | 西南大学 | Novel organic solar cell producing free carriers based on interface recombination |
| CN102694123A (en) * | 2011-03-22 | 2012-09-26 | 中国科学院长春应用化学研究所 | An organic semiconductor micro-nanocrystalline array, a preparation method thereof and application thereof in a photovoltaic cell |
| CN103219468A (en) * | 2013-04-12 | 2013-07-24 | 中南大学 | Order bulk phase heterojunction organic solar cell and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| Evidences of photocurrent generation by hole–exciton interaction at organic semiconductor interfaces;ping Li等;《Organic Electonics》;20150714;正文第2.2节 * |
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