CN108258113A - The resistance-variable storing device that a kind of performance is controllable and stability is high - Google Patents
The resistance-variable storing device that a kind of performance is controllable and stability is high Download PDFInfo
- Publication number
- CN108258113A CN108258113A CN201810114114.7A CN201810114114A CN108258113A CN 108258113 A CN108258113 A CN 108258113A CN 201810114114 A CN201810114114 A CN 201810114114A CN 108258113 A CN108258113 A CN 108258113A
- Authority
- CN
- China
- Prior art keywords
- resistance
- storing device
- variable storing
- performance
- stability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Abstract
The controllable and high stability resistance-variable storing device the invention discloses a kind of performance, it is followed successively by substrate, hearth electrode, change resistance layer, top electrode from top to bottom, it is characterized in that, the resistance-variable storing device further includes conductive oxide film, it is set between hearth electrode and change resistance layer, is set between hearth electrode and change resistance layer between top electrode and change resistance layer between top electrode and change resistance layer or simultaneously, realize to the activation voltage of resistance-variable storing device and prevent the regulation and control of ratio by the content of thickness and Lacking oxygen for changing conductive oxide film.The resistance-variable storing device improves the stability of resistance-variable storing device, and can regulate and control the change resistance performance of resistance-variable storing device.
Description
Technical field
The invention belongs to resistive memory fields, and in particular to the resistance-change memory that a kind of performance is controllable and stability is high
Device.
Background technology
Resistance-variable storing device (Resistive Random Access Memory, RRAM) is to utilize certain thin-film materials outside
Switching characteristic under the action of added electric field realizes that data store, and is a kind of novel nonvolatile memory.Resistance-variable storing device
Structure is usually simple three-decker, i.e., the medium material of one layer of insulating properties or semiconductor property is clipped between double layer of metal
Material is formed.Its is simple in structure, unit size is small, and erasable speed is fast, storage density is high, repetition is erasable often, multivalue stores etc.
Advantage, and preparation process and existing semiconductor technology compatibility are good, it is considered to be the strong competition of next-generation mainstream memory
Person.Memory is with a wide range of applications, and such as is required for using in wireless radio-frequency identification chip and wearable system readable
Nonvolatile storage is write to store data.
Existing resistance-variable storing device directly affects the resistance value of its high and low resistance state and erasable voltage since performance is unstable,
So as to occur misreading, accidentally write phenomenon, the reliability of data is influenced, and then lead to the practical application of resistance-variable storing device.
Invention content
The controllable and high stability resistance-variable storing device the present invention provides a kind of performance.The resistance-variable storing device is included by leading
The regulation and control layer of electroxidation object composition, and then the stability of resistance-variable storing device is improved, and the resistive of resistance-variable storing device can be regulated and controled
Performance.
For achieving the above object, the present invention provides following technical scheme：
The resistance-variable storing device that a kind of performance is controllable and stability is high, be followed successively by from top to bottom substrate, hearth electrode, insulation
Change resistance layer, top electrode, the resistance-variable storing device further include conductive transparent oxide film, be set to hearth electrode and change resistance layer it
Between, be set between top electrode and change resistance layer or simultaneously between hearth electrode and change resistance layer between top electrode and change resistance layer, pass through
The content of thickness and Lacking oxygen for changing conductive oxide film is realized to the activation voltage of resistance-variable storing device and the tune of resistance value ratio
Control.
The conductive filament mechanism of Lacking oxygen type resistance-variable storing device thinks：Its electric resistance changing mechanism is to be based on anion, mainly
It is the electromigration of oxonium ion, the defects of electromigration of oxonium ion causes inside film redistributes, and forms leading based on Lacking oxygen
Electric filament.The distribution of Lacking oxygen in the operation of subsequent voltage of such device causes device high and low resistance state occur.Oxygen is empty
Migration of the position under electric field action can be converted with control device between high and low resistance state.
Conductive oxide film belongs to the semiconductor of Lacking oxygen conduction, has the spy of storage Lacking oxygen and oxonium ion well
Property, it is preferable that the conductive oxide film is tin indium oxide (ITO), zinc oxide aluminum (AZO), indium zinc oxide (IZO), is aoxidized
Zinc gallium (GZO) or indium gallium zinc (IGZO) film.
It being obtained through many experiments, the thickness of conductive oxide film has a major impact the stability of resistance-variable storing device, and
By adjusting thickness, can realize to the activation voltage of resistance-variable storing device and the regulation and control of resistance value ratio.Preferably, the electrically conducting transparent
The thickness of sull is 3nm~200nm, further preferably, the thickness of the transparent conductive oxide film for 60nm~
160nm。
Preferably, the hearth electrode and top electrode are compound using one or more of gold, silver, platinum, aluminium, copper, titanium.
The thickness of hearth electrode and top electrode can influence the performance of resistance-variable storing device, it is preferable that the hearth electrode and top electricity
The thickness of pole is 20nm~500nm.
Change resistance layer uses metal oxide and nitride, which can be binary oxide, ternary oxide
With multivariant oxide etc., it is specifically as follows the oxides such as Al, Ni, Zn, Sn of insulating properties.
Preferably, the thickness of the change resistance layer is 2nm~300nm.
Magnetron sputtering method, chemical vapor deposition, thermal evaporation, atomic layer deposition, pulse may be used in the resistance-variable storing device
Laser deposition, chemical solution or epitaxial growth prepare.
Compared with prior art, the device have the advantages that being：
The present invention increases by one layer of conductive oxide film and regulates and controls as performance on the basis of original resistance-variable storing device
Layer, substantially increases the stability of device, and by changing the thickness of conductive oxide film, the content of Lacking oxygen is realized to device
The resistance value ratio of part is regulated and controled, and preparation process is simple, easily operated, technological temperature it is relatively low (<400 DEG C, it might even be possible to room temperature),
Reduce manufacture cost.
Description of the drawings
Fig. 1 is the structure diagram of comparative example, wherein, (a) is the front view of structure, and (b) is the vertical view of structure；
Fig. 2 is the preparation technology flow chart for the resistance-variable storing device that embodiment 1 provides；
Fig. 3 is the performance test figure of resistance-variable storing device prepared by embodiment 1；
Fig. 4 is the structure diagram for the resistance-variable storing device that embodiment 2 provides；
Fig. 5 is the structure diagram for the resistance-variable storing device that embodiment 3 provides；
Fig. 6 is the performance test figure for the resistance-variable storing device that embodiment 4 provides.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, with reference to the accompanying drawings and embodiments to this
Invention is described in further detail.It should be appreciated that the specific embodiments described herein are only used to explain the present invention,
Do not limit protection scope of the present invention.
Comparative example
The structure diagram of resistance-variable storing device prepared by this comparative example is as shown in Figure 1, specific preparation process is as follows：
First, the depositing Al conductive film in glass substrate 4, and being performed etching to Al conductive films forms hearth electrode 3；
Then, the Al that deposition thickness is 10nm on hearth electrode 32O3Film forms change resistance layer 2；
Finally, in depositing Al conductive film on change resistance layer, top electrode 1 is formed, obtains resistance-variable storing device.
The resistance-variable storing device prepared to this comparative example is tested, and the activation voltage for obtaining the resistance-variable storing device is 8-9V,
The voltage-current relationship figure fluctuation of multiple measurement device is larger.
Embodiment 1
In the resistance-variable storing device prepared in the present embodiment, conductive oxide film is ito thin film, and thickness 60nm is placed in
Between hearth electrode and change resistance layer.
Specific preparation process is as shown in Figure 2：
First, in depositing Al conductive film in glass substrate 4, and Al conductive films are performed etching, form hearth electrode 3,
As shown in Fig. 2 (a)；
Then, in the ito thin film that deposition thickness on hearth electrode 3 is 60nm, forming properties regulation and control layer 5, such as Fig. 2 (b) institutes
Show；
Next, in the Al that deposition thickness is 10nm on performance regulation and control layer 52O3Film forms change resistance layer 2, such as Fig. 2 (c) institutes
Show；
Finally, in depositing Al conductive film on change resistance layer 2, top electrode 1 is formed, as shown in Fig. 2 (d), obtains resistance-change memory
Device.
Resistance-variable storing device manufactured in the present embodiment is tested, test result such as Fig. 3 (a) and (b) are shown.From Fig. 3
(a) it can obtain, the activation voltage of the resistance-variable storing device is in 4V or so, and compared with comparative example, activation voltage is obviously reduced, abundant table
Bright, activation voltage can be reduced by increasing conductive oxide film.It can be obtained from Fig. 3 (b), the resistance value ratio of the resistance-variable storing device is 600-
The variation range of 700 or so, set voltage shows that device has good stability in 0.2V.
Embodiment 2
The present embodiment prepare resistance-variable storing device technical process and parameter it is same as Example 1, unlike, this implementation
In resistance-variable storing device prepared by example, thickness is that the ito thin film of 60nm is placed between top electrode and change resistance layer, as shown in Figure 4.
Resistance-variable storing device manufactured in the present embodiment is tested, test result is：The activation voltage of the resistance-variable storing device
In 4V or so, in 0.2V, the resistance value ratio of the resistance-variable storing device is 600-700 or so for the variation ranges of set voltages.
Embodiment 3
The present embodiment prepare resistance-variable storing device technical process and parameter it is same as Example 1, unlike, this implementation
Example prepare resistance-variable storing device in, thickness be 30nm ito thin film be placed in simultaneously between hearth electrode and change resistance layer and top electrode and
Between change resistance layer, as shown in Figure 5.
Resistance-variable storing device manufactured in the present embodiment is tested, test result is：The activation voltage of the resistance-variable storing device
In 4V or so, in 0.2V, the resistance value ratio of the resistance-variable storing device is 600-700 or so for the variation ranges of set voltages.
Embodiment 4
In resistance-variable storing device manufactured in the present embodiment, performance regulation and control are placed between hearth electrode and change resistance layer, film thickness
Difference, by preparing the film of different-thickness by controlling sputtering time, and then realize in the preparation of oxide film layer
The different performance of device.
Specifically, (1) deposits layer of conductive film (being Au in the present embodiment) on the substrate 4, and etches and form memory
Hearth electrode 3；
(2) oxide electroconductive film (thickness of ITO films point in the present embodiment of two kinds of thickness is deposited on hearth electrode
Wei 80nm and 160nm) as performance regulate and control layer；
(3) deposition change resistance layer 2 (being 10nm aluminum oxide films in the present embodiment) on performance regulation and control layer；
(4) layer of conductive film is deposited on change resistance layer and forms top electrode 1 (being Ti films in the present embodiment), is completed
The preparation of main technique.
Resistance-variable storing device manufactured in the present embodiment is tested, test result is as shown in Figure 6.It can be obtained from Fig. 6, ITO is thick
The resistance value ratio of the transition storage part for 80nm is spent 104Left and right, ITO thickness are the resistance value ratio of the device of 160nm 102Left and right, fills
Divide the thickness for showing to regulate and control by performance of control layer, can realize the regulation and control to the resistance value ratio of device.
Technical scheme of the present invention and advantageous effect is described in detail in above-described specific embodiment, Ying Li
Solution is the foregoing is merely presently most preferred embodiment of the invention, is not intended to restrict the invention, all principle models in the present invention
Interior done any modification, supplementary, and equivalent replacement etc. are enclosed, should all be included in the protection scope of the present invention.
Claims (8)
- The resistance-variable storing device that 1. a kind of performance is controllable and stability is high, be followed successively by from top to bottom substrate, hearth electrode, change resistance layer, Top electrode, which is characterized in that the resistance-variable storing device further includes transparent conductive oxide film, is set to hearth electrode and change resistance layer Between, be set between top electrode and change resistance layer or simultaneously between hearth electrode and change resistance layer between top electrode and change resistance layer, lead to The content for crossing the thickness for changing conductive oxide film and Lacking oxygen realizes activation voltage and resistance value ratio to resistance-variable storing device Regulation and control.
- The resistance-variable storing device that 2. performance as described in claim 1 is controllable and stability is high, which is characterized in that described transparent to lead Oxide film is ITO, AZO, IZO, GZO or IGZO film.
- The resistance-variable storing device that 3. performance as described in claim 1 is controllable and stability is high, which is characterized in that described transparent to lead The thickness of oxide film is 3nm~200nm.
- The resistance-variable storing device that 4. performance as described in claim 1 is controllable and stability is high, which is characterized in that described transparent to lead The thickness of oxide film is 60nm~160nm.
- The resistance-variable storing device that 5. performance as described in claim 1 is controllable and stability is high, which is characterized in that the hearth electrode It is compound using one or more of gold, silver, platinum, aluminium, copper, titanium with top electrode.
- The resistance-variable storing device that 6. performance as described in claim 1 is controllable and stability is high, which is characterized in that the hearth electrode Thickness with top electrode is 20nm~500nm.
- The resistance-variable storing device that 7. performance as described in claim 1 is controllable and stability is high, which is characterized in that the change resistance layer Thickness be 2nm~300nm.
- The resistance-variable storing device that 8. performance as described in claim 1 is controllable and stability is high, which is characterized in that the resistive is deposited Reservoir uses magnetron sputtering method, chemical vapor deposition, thermal evaporation, atomic layer deposition, pulsed laser deposition, chemical solution or extension Growth prepares.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810114114.7A CN108258113A (en) | 2018-02-05 | 2018-02-05 | The resistance-variable storing device that a kind of performance is controllable and stability is high |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810114114.7A CN108258113A (en) | 2018-02-05 | 2018-02-05 | The resistance-variable storing device that a kind of performance is controllable and stability is high |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108258113A true CN108258113A (en) | 2018-07-06 |
Family
ID=62744196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810114114.7A Pending CN108258113A (en) | 2018-02-05 | 2018-02-05 | The resistance-variable storing device that a kind of performance is controllable and stability is high |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108258113A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931634A (en) * | 2018-08-31 | 2020-03-27 | 清华大学 | Resistive device and preparation method and design method thereof |
| CN114068808A (en) * | 2021-11-03 | 2022-02-18 | 厦门半导体工业技术研发有限公司 | Semiconductor integrated circuit device and method for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207993903U (en) * | 2018-02-05 | 2018-10-19 | 浙江大学 | The resistance-variable storing device that a kind of performance is controllable and stability is high |
-
2018
- 2018-02-05 CN CN201810114114.7A patent/CN108258113A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN207993903U (en) * | 2018-02-05 | 2018-10-19 | 浙江大学 | The resistance-variable storing device that a kind of performance is controllable and stability is high |
Non-Patent Citations (1)
| Title |
|---|
| E O FILATOVA1, A P BARABAN1, A S KONASHUK, ET AL: "Transparent-conductive-oxide (TCO) buffer layer effect on the resistive switching process in metal/ TiO2/TCO/metal assemblies", NEW JOURNAL OF PHYSICS, vol. 16, no. 113014, pages 1 - 16 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931634A (en) * | 2018-08-31 | 2020-03-27 | 清华大学 | Resistive device and preparation method and design method thereof |
| CN110931634B (en) * | 2018-08-31 | 2022-05-31 | 清华大学 | Resistive device and preparation method and design method thereof |
| CN114068808A (en) * | 2021-11-03 | 2022-02-18 | 厦门半导体工业技术研发有限公司 | Semiconductor integrated circuit device and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sun et al. | Performance‐enhancing selector via symmetrical multilayer design | |
| US8227785B2 (en) | Chalcogenide containing semiconductors with chalcogenide gradient | |
| CN108831992A (en) | A kind of resistance-variable storing device and preparation method thereof of hafnium doping zinc-oxide change resistance layer | |
| CN109638153A (en) | A kind of gating tube material, gating tube device and preparation method thereof | |
| Aziz et al. | Discrete memristive levels and logic gate applications of Nb2O5 devices | |
| Bousoulas et al. | Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2− x thin films | |
| TWI501356B (en) | Memristors having mixed oxide phases | |
| CN108258113A (en) | The resistance-variable storing device that a kind of performance is controllable and stability is high | |
| CN105932035A (en) | Gating device for resistive random access memory crossbar array and preparation method thereof | |
| RU149246U1 (en) | ELEMENT OF RESISTIVE ENERGY INDEPENDENT MEMORY | |
| CN207993903U (en) | The resistance-variable storing device that a kind of performance is controllable and stability is high | |
| Park et al. | Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing | |
| US20160155619A1 (en) | Forming memory using high power impulse magnetron sputtering | |
| CN107275480B (en) | A kind of resistance-variable storing device and preparation method thereof of double-layer porous structure amorphous carbon material | |
| Zhou et al. | Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement | |
| CN107579153B (en) | Low-power consumption resistance-variable storing device and preparation method thereof of the one kind based on electrode hafnium (Hf) doping | |
| CN102820428A (en) | Improved oxide-film resistance changing memory and improvement method thereof | |
| EP3588594A1 (en) | Programmable resistive memory element and a method of making the same | |
| CN111326651A (en) | OTS material, gating unit and preparation method thereof | |
| CN105514267A (en) | Low-power-consumption memristor based on amorphous SiC thin-film and preparation method thereof | |
| Bao | Transition metal oxide thin films for nonvolatile resistive random access memory applications | |
| CN102738391B (en) | Resistance random access memory with adjustable dielectric layer magnetic property | |
| Guo et al. | Tuning oxygen vacancies and resistive switching behaviors in amorphous Y2O3 film-based memories | |
| Zhang et al. | Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory | |
| CN104409628A (en) | PCM (phase-change material), phase change memory made of PCM and production method of phase change memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |