CN108257850B - Plasma substrate cutting method and water-soluble photosensitive film used for same - Google Patents
Plasma substrate cutting method and water-soluble photosensitive film used for same Download PDFInfo
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- CN108257850B CN108257850B CN201611248053.0A CN201611248053A CN108257850B CN 108257850 B CN108257850 B CN 108257850B CN 201611248053 A CN201611248053 A CN 201611248053A CN 108257850 B CN108257850 B CN 108257850B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
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Abstract
The invention provides a plasma substrate cutting method and a mask for plasma substrate cutting. The invention utilizes a soluble photosensitive film to be attached to the upper surface of the substrate, and utilizes the photosensitive film as a bottom buffer layer to carry out mechanical thinning treatment on the back surface of the substrate, and simultaneously, the photosensitive film can also carry out exposure process to form an etching pattern. And then, carrying out deep silicon etching on the substrate by using an etching pattern formed by exposure, and dividing different blocks on the substrate. And finally, the substrate after the plasma etching is put into an aqueous solution, and the water-soluble photosensitive film can be removed after being dissolved in the aqueous solution, so that the traditional photoresist oxidation removal step is omitted.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a plasma substrate cutting method and a mask for plasma cutting.
Background
In the semiconductor industry, a semiconductor substrate includes a plurality of processing regions separated by dividing lines. The processing area forms a required semiconductor device after a large number of processing technologies such as etching, deposition, doping and the like, the substrate needs to be cut, the whole substrate is cut into a plurality of semiconductor modules, the modules are internally provided with processed semiconductor functional structures, and finally the semiconductor modules can be packaged into a shell to form chips applied to various fields. The traditional substrate cutting method is to cut the substrate by using mechanical methods such as an electric saw and the like, but the cutting method has obvious disadvantages: the area of the substrate occupied by cutting is large, and a separation line with the width larger than 0.1mm needs to be reserved for cutting; the cutting lines can only be arranged in a straight line, and the two characteristics can cause that a large amount of area of the upper surface of the substrate can not be used as a processing area, thereby forming huge waste. Therefore, plasma dicing is becoming more popular now, because plasma dicing only requires a layer of photoresist to be coated on the surface of the substrate by spin coating or spray coating process, and then exposing and developing to form a pattern mask to be diced on the photoresist. And finally, turning over the substrate, thinning the back of the substrate by mechanical grinding, and finally separating processing areas on two sides of each etched channel. The width of the separation line for forming the cutting pattern by using the photoresist can be far less than 0.1mm (100um) and even can reach several micrometers, so that the occupied area of the separation line is small, simultaneously, the pattern formed on the photoresist can be randomly designed according to needs, the optimal arrangement can be finally achieved, and the processing area with the largest area can be arranged. Plasma dicing can significantly improve the utilization of the substrate. However, plasma etching also has some problems, such as the material of the photoresist is softer, the photoresist is damaged due to the huge pressure on the back surface when the substrate is turned over and thinned, and the semiconductor device on the wafer is damaged, and the photoresist is removed by placing the substrate into a special vacuum reaction chamber, and oxidizing and reacting the photoresist by using plasma and oxygen, and these special reaction chambers occupy a large amount of clean room space and are expensive, and the plasma can also cause potential damage to the surface of the substrate.
Therefore, there is a need in the art to develop a new plasma substrate cutting method while avoiding the above-mentioned disadvantages of cutting using plasma.
Disclosure of Invention
The invention discloses a plasma substrate cutting method, wherein a plurality of processing areas are arranged on a substrate, separation lines are arranged among different processing areas, and the cutting method comprises the following steps: attaching a water-soluble photosensitive film to the surface of a substrate; turning the substrate to enable the back of the substrate to face upwards, and thinning the material layer on the back of the substrate by using mechanical grinding equipment; step three, after the thinning of the back material of the substrate is finished, attaching a cutting protective film to the back of the substrate; after the cutting protective film is attached to the back of the substrate, turning over the substrate, putting the substrate into a plasma etching cavity, and performing plasma etching by using the water-soluble photosensitive film as a mask to form a plurality of deep grooves on the substrate; and fifthly, after the plasma etching is finished, putting the substrate into the water solution to remove the water-soluble photosensitive film. And taking the substrate out of the aqueous solution by using the cutting protective film after the step five is executed, and then removing a plurality of substrate effective parts formed after cutting and attached to the cutting protective film, wherein the effective parts correspond to at least one processing area of the substrate.
The plasma substrate cutting method also comprises a water-soluble photosensitive film exposure step, wherein a cutting pattern is formed on the water-soluble photosensitive film, and the line width of the pattern is less than 30 um. Wherein the water-soluble photosensitive film exposure step can be performed between the first step and the second step or between the third step and the fourth step. And in the plasma etching step, the cutting pattern is used as a mask to etch the substrate downwards, and the cutting pattern is the combination of separation lines among all processing areas.
Wherein the plasma etching step makes the plurality of deep trenches formed in the substrate penetrate through the upper surface and the lower surface of the substrate, so that the processing regions on the substrate are separated from each other. Or the groove formed by plasma etching still has a substrate material layer with the bottom less than 50um, and each processing area is separated by subsequent processes.
The water-soluble photosensitive film for the plasma substrate cutting method is made of water-soluble acrylic resin, and the thickness of the water-soluble photosensitive film is less than or equal to 40 um.
Drawings
FIG. 1 is a schematic view of a process flow of a substrate cutting method according to the present invention;
FIG. 2 is a schematic view of a second embodiment of the processing flow of the substrate cutting method of the present invention.
Detailed Description
The following describes an embodiment of the present invention with reference to fig. 1. The invention discloses a novel substrate cutting method, which comprises a plurality of steps S11-S16 and the like as shown in figure 1. Wherein a region 10a of the substrate 10 near the upper surface with a certain thickness comprises semiconductor devices formed after processing, and the lower substrate 10b layer is mostly crystalline silicon. The photosensitive film 20, being a solid dry film, has a mechanical strength much higher than that of conventional photolithography, and thus can withstand the pressure during the subsequent mechanical thinning process without being damaged.
The step S11 is executed in order during the cutting process: attaching or placing a layer of solid photosensitive film 20 on the upper surface of the substrate 10;
s12: the substrate 10 is turned over so that the back side of the substrate faces upward, and then the crystalline silicon material layer on the back side of the substrate is thinned by using a mechanical grinding device until the thickness of the material layer 10b is reduced to a thickness suitable for plasma deep silicon etching.
S13 attaching the cutting fixing film 30 to the back surface of the thinned substrate, where the cutting fixing film 30 may be made of an organic polymer, and the plurality of semiconductor modules formed after the cutting process is completed can be fixed on the whole cutting protection film, so as to facilitate transfer and prevent scattering of the modules.
S14, the substrate is turned over again so that the photosensitive film 20 faces upward, and then the designed cut pattern exposure is projected onto the photosensitive film 20 so that the cut pattern grooves T1 are formed on the photosensitive film.
S15, putting the substrate with the photosensitive film exposed into the plasma etching chamber, and etching the substrate downwards by using the photosensitive film as a mask until the groove T1 is etched downwards to the surface of the cutting protection film 30 to form a groove T2 with a second depth.
S16: the photosensitive film 20 is water-soluble, the substrate after plasma etching is put into an aqueous solution, so that the water-soluble photosensitive film 20 is dissolved and eliminated, and finally, each semiconductor module on the substrate is taken out of the aqueous solution by cutting the protective film 30 for subsequent processes.
The present invention also provides a cutting method of a second embodiment, including the following respective steps S21 to S26:
s21: the photosensitive film 20 is attached to the upper surface of the substrate, as in S11.
S22: the designed cut pattern exposure is projected onto the photosensitive film 20, as in S14, so that a cut pattern groove T1 is formed on the photosensitive film.
S23: and turning the substrate to enable the back of the substrate to face upwards, and thinning the crystalline silicon material layer on the back of the substrate by using mechanical grinding equipment until the thickness of the 10b material layer is reduced to the thickness suitable for carrying out plasma deep silicon etching.
S24, attaching the dicing fixing film 30 to the back surface of the base sheet.
S25: the substrate is turned over again, so that the photosensitive film 20 faces upward, the substrate 10 is subjected to plasma etching downward by using the cutting pattern formed on the photosensitive film as a mask until the etching trench T1 extends downward to the cutting fixing film 30 to form a deep trench T2, and the semiconductor modules are separated from each other by the mutually communicated deep trenches T2.
S26: similarly to S16, the substrate subjected to the plasma etching is put into an aqueous solution to dissolve and remove the water-soluble photosensitive film 20, and finally, the semiconductor modules on the substrate are taken out of the aqueous solution by the dicing protective film 30 to be subjected to the subsequent processes.
In the above two substrate cutting processes, in the process of etching the substrate by plasma in steps S15 and S25, the etching depth may not be etched through the entire substrate to reach the cutting fixing film 30, but a very thin substrate material layer, such as a silicon material layer smaller than 50um, is left, and the optimum requirement is smaller than 25 um. The connection of different semiconductor modules through the silicon material layer left after etching can enable the substrate to be positioned more accurately in the subsequent transmission process, when the semiconductor modules need to be separated, the cutting fixing film 30 can be placed into special equipment to be stretched, the residual thin layers can be broken under the action of tensile force, and finally all the semiconductor modules are separated from each other.
The invention adopts the water-soluble solid photosensitive film as the etching mask, so that the substrate can be turned over, and the photosensitive film is used as the bottom buffer layer to be thinned on the substrate. Meanwhile, because the photosensitive film is water-soluble, one or more substrates can be directly put into the aqueous solution to directly dissolve the photosensitive film in the removing process. Compared with the prior art that the photoetching cannot perform thinning processing, and expensive equipment and slow processing efficiency are needed for removing the photoresist, the method has obvious advantages by adopting the water-soluble solid photosensitive film. The water-soluble solid photosensitive film material can be water-soluble acrylic resin or other resins which can be used in the field of the invention. The water-soluble photosensitive film used in the invention can be synthesized into the water-soluble resin dry film by a solution polymerization method, the thickness of the acrylic resin film adopted in the invention is about 30um, and a pattern with a line width (critical dimension) of 15-30um can be obtained after exposure and development. Photosensitive resin films with different resolution can be obtained by adopting different raw material proportions and synthesis methods, the photosensitive resin films can be applied to the application field of the invention as long as the line width of the patterns formed by the photosensitive films after exposure can reach 10-30um, and the resolution is far smaller than 100um which can be reached by a substrate cutting device in the prior art. Therefore, the effective processing area on the substrate is obviously increased by adopting the cutting method, the yield is increased, and the cost is reduced.
According to the invention, the water-soluble photosensitive dry film is used as a mask material layer for plasma cutting, so that the mechanical pressure in the thinning process can be resisted, and the photosensitive film can be removed only by dissolving with aqueous solution after the plasma etching is finished, so that the plasma cutting process can be greatly simplified, the damage to the surface of the substrate is avoided, the cost is reduced, and the method has obvious competitive advantages. The substrate of the present invention may be a crystalline silicon substrate or a composite substrate such as a substrate formed by stacking silicon and an insulating material layer (SOI), and the substrate capable of being etched by plasma is within the application scope of the present invention.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (7)
1. A method of plasma cutting a substrate having a plurality of processing regions with a separation line between different processing regions, the method comprising:
attaching a water-soluble photosensitive film to the surface of a substrate, wherein the thickness of the water-soluble photosensitive film is more than 30um and less than 40 um;
turning the substrate to enable the back of the substrate to face upwards, and thinning the material layer on the back of the substrate by using mechanical grinding equipment;
step three, after the thinning of the back material of the substrate is finished, attaching a cutting protective film to the back of the substrate;
after the cutting protective film is attached to the back of the substrate, turning over the substrate and putting the substrate into a plasma etching cavity, and performing plasma etching by using the water-soluble photosensitive film as a mask to form a plurality of deep grooves on the substrate, wherein the bottom of the grooves formed by the plasma etching still remains a substrate material layer smaller than 50 microns;
fifthly, after the plasma etching is finished, putting the substrate into an aqueous solution to remove the water-soluble photosensitive film;
provide the cutting figure, it is right water-soluble photosensitive film exposes, will the projection of cutting figure is on water-soluble photosensitive film form the slot of cutting figure in the water-soluble photosensitive film, the line width of cutting figure is less than 30um, the bottom of slot exposes the surface of substrate.
2. The substrate cutting method according to claim 1, wherein the substrate is etched down by using the cutting pattern, which is a combination of separation lines between the respective processing regions, as a mask in the plasma etching step.
3. The substrate cutting method according to claim 1, wherein the substrate is taken out of the aqueous solution by using the cutting protective film after the step five is performed, and then a plurality of cut substrate effective parts attached to the cutting protective film are removed, the effective parts corresponding to at least one processing area of the substrate.
4. The substrate cutting method according to claim 1, wherein the water-soluble photosensitive film exposure step is performed between the first and second steps.
5. The substrate cutting method according to claim 1, wherein the exposing step of the water-soluble photosensitive film is performed between the third and fourth steps.
6. A water-soluble photosensitive film used in the plasma substrate cutting method of claim 1, said water-soluble photosensitive film being made of a water-soluble acrylic resin.
7. A method of plasma cutting a substrate having a plurality of processing regions with a separation line between different processing regions, the method comprising:
attaching a water-soluble photosensitive film to the surface of a substrate, wherein the thickness of the water-soluble photosensitive film is more than 30um and less than 40 um;
step two, water-soluble photosensitive film exposure step, providing a cutting pattern, exposing the water-soluble photosensitive film, projecting the cutting pattern on the water-soluble photosensitive film, forming a groove of the cutting pattern on the water-soluble photosensitive film, wherein the line width of the cutting pattern is less than 30um, and the bottom of the groove is exposed out of the surface of the substrate;
performing plasma etching by using the water-soluble photosensitive film as a mask to form a plurality of deep grooves on the substrate, wherein the bottom of the grooves formed by the plasma etching still remains a substrate material layer smaller than 50 um;
and step four, after the plasma etching is finished, putting the substrate into the water solution to remove the water-soluble photosensitive film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611248053.0A CN108257850B (en) | 2016-12-29 | 2016-12-29 | Plasma substrate cutting method and water-soluble photosensitive film used for same |
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| CN201611248053.0A CN108257850B (en) | 2016-12-29 | 2016-12-29 | Plasma substrate cutting method and water-soluble photosensitive film used for same |
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| CN108257850A CN108257850A (en) | 2018-07-06 |
| CN108257850B true CN108257850B (en) | 2022-02-15 |
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| CN110098114A (en) * | 2018-01-31 | 2019-08-06 | 东莞新科技术研究开发有限公司 | Semiconductor long strips and its processing method |
| CN109202297A (en) * | 2018-08-01 | 2019-01-15 | 南京理工大学 | A kind of laser wet etch process suitable for arbitrary surface transparent dielectric material |
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| US8703581B2 (en) * | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
| US9721839B2 (en) * | 2015-06-12 | 2017-08-01 | Applied Materials, Inc. | Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch |
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- 2016-12-29 CN CN201611248053.0A patent/CN108257850B/en active Active
Non-Patent Citations (1)
| Title |
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| 水溶性丙烯酸酯类感光干膜的制备及性能研究;李伟杰等;《影像科学与光化学》;20160331;第34卷(第2期);第172-180页 * |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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