CN108251814A - A kind of preparation method for the tungsten alloy for having memory alloy layer - Google Patents

A kind of preparation method for the tungsten alloy for having memory alloy layer Download PDF

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CN108251814A
CN108251814A CN201810187219.5A CN201810187219A CN108251814A CN 108251814 A CN108251814 A CN 108251814A CN 201810187219 A CN201810187219 A CN 201810187219A CN 108251814 A CN108251814 A CN 108251814A
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瞿凌飞
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/067—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds comprising a particular metallic binder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/08—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on tungsten carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5886—Mechanical treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a kind of preparation method for the tungsten alloy for having memory alloy layer, this method significantly improves and controls materials microstructure structure so that the tungsten alloy of preparation；The method that the present invention uses magnetron sputtering, and using the means of zerolling, rare-earth mamem layer, the yield strength that can will promote the alloy are formed on tungsten alloy surface so that the surface even compact of tungsten alloy, film substrate bond strength height, good mechanical performance.

Description

A kind of preparation method for the tungsten alloy for having memory alloy layer
Technical field
A kind of alloy manufacturing field of the present invention, and in particular to preparation method for the tungsten alloy for having memory alloy layer.
Background technology
Tungsten and its alloy are due to fusing point is high, intensity is big, electrical and thermal conductivity performance is good, etch resistant properties are strong and high-temperature mechanics Can be good the advantages that, it is widely used in the high-temperature fields such as high-temperature heating, glass melting, thermal structure support element.
Marmem（Shape Memory Alloy, SMA）Refer to after suitably deforming, in certain physical condition Change the alloy for descending energy automatic working and restoring shape before deforming.Marmem has higher restorability shape because of it Become, it has also become a kind of important functional material is applied widely.NiTi system shape memory has reminiscence original shape, nothing Magnetism, wear-and corrosion-resistant, high temperature resistant, avirulent feature.But, the yield strength of current marmem generally exists Below 700MPa.
Invention content
The present invention provides a kind of preparation method for the tungsten alloy for having memory alloy layer, and this method is significantly improved and controlled Materials microstructure structure so that the tungsten alloy of preparation；The method that the present invention uses magnetron sputtering, and using the hand of zerolling Section forms rare-earth mamem layer, the yield strength that can will promote the alloy so that the surface of tungsten alloy on tungsten alloy surface Even compact, film substrate bond strength are high, good mechanical performance.
To achieve these goals, the present invention provides a kind of preparation methods for the tungsten alloy for having memory alloy layer, should Tungsten alloy base material is made of following components by weight percent：WC powder 90-95 part of the Fisher particle size for 1-1.5um, Fisher particle size 0.5- 8-12 parts of the Co powder of 0.8um, 1-2 parts of Si powder, 0.5-1 parts of graphite powder；
This method comprises the following steps：
（1）Prepare tungsten alloy base material
Each material component is chosen by above-mentioned material formula；
1Kg agitating ball mills are selected, first add in Si powder, C powder and Co powder, amylalcohol is added in as grinding medium in the ratio of 500ml/kg Matter, by ratio of grinding media to material example 5：1 adds in mill ball, is stirred grinding, grinds bulb diameter D7, and ball mill mixing speed 480rpm is filled out It is 0.85 to fill coefficient, is ground 1 hour；
Then it adds tungsten carbide to grind 5-7 hours, forms slurry, form slurry；
Filtering, drying, the mesh number of filtering is 40-50 mesh, and drying temperature is 70-85 DEG C, and carbide alloy mixture grain is made；
By carbide alloy mixture grain by being molded or squeezing or injection molding, hard alloy blank is made；
Hard alloy blank is entered into sintering furnace and is sintered molding, sintering temperature during sinter molding is 1400-1425 DEG C, Ar Pressure is 8-10Mpa, sintering time 30-100min, obtains tungsten alloy base material；
（2）Base material pre-processes
The base material pretreatment can be ground polishing, ultrasonic cleaning and ion source cleaning successively；
（3）Prepare rare-earth mamem target
The rare-earth mamem target is made of titanium, nickel, aluminium, yttrium, chromium, element silicon；
Include following component by weight：55-65 parts of titanium, 10-12 parts of nickel；6-9 parts of aluminium；1-3 parts of yttrium, 4-6 parts of chromium；1-2 parts of silicon；
Rare-earth mamem target is prepared using smelting process；
（4）Using above-mentioned alloy target material, using magnetically controlled sputter method, the rare-earth mamem of film-form is formed on above-mentioned base material Layer：
It is evacuated to 10-4More than Pa is filled with nitrogen, is then evacuated to 10 again-4Pa, adjustment operating voltage are 500V, and sputtering accounts for Sky proceeds by sputtering sedimentation, control thickness is the 150-250 μm of rare-earth mamem layer for obtaining film-form than 65-68%；
Start rolling machine system, set the speed of top and bottom rolls than being 1.2-1.5, set each rolling deformation amount as 2-3%；It sets low The speed of fast roller is 0.05-0.1m/s, starts the operation of rolling with the tungsten nickel of rare-earth mamem layer；Once rolled Afterwards, repeat to roll 3-5 times, in the operation of rolling, it is -30 to -20 degrees Celsius to keep environment temperature；At 150-200 degrees Celsius Low Temperature Heat Treatment 1-2h is carried out, obtains product.
The present invention has advantages below：
（1）This method significantly improves and controls materials microstructure structure so that the tungsten alloy of preparation；
（2）The method that the present invention uses magnetron sputtering, and using the means of zerolling, rare earth memory is formed on tungsten alloy surface Alloy-layer, the yield strength that can will promote the alloy so that the surface even compact of tungsten alloy, film substrate bond strength height, power Learn function admirable.
Specific embodiment
Embodiment one
The present embodiment tungsten alloy base material is made of following components by weight percent：WC powder 90 part of the Fisher particle size for 1-1.5um, Fisher particle size For 8 parts of the Co powder of 0.5-0.8um, 1 part of Si powder, 0.5 part of graphite powder.
Each material component is chosen by above-mentioned material formula.
1Kg agitating ball mills are selected, first add in Si powder, C powder and Co powder, is used as and grinds in the ratio addition amylalcohol of 500ml/kg Grinding media, by ratio of grinding media to material example 5：1 adds in mill ball, is stirred grinding, grinds bulb diameter D7, ball mill mixing speed 480rpm, fill factor 0.85 are ground 1 hour.
Then it adds tungsten carbide to grind 5 hours, forms slurry, form slurry.
Filtering, drying, the mesh number of filtering is 40 mesh, and drying temperature is 70 DEG C, and carbide alloy mixture grain is made.
By carbide alloy mixture grain by being molded or squeezing or injection molding, hard alloy blank is made.
Hard alloy blank is entered into sintering furnace and is sintered molding, sintering temperature during sinter molding is 1400 DEG C, Ar Pressure is 8Mpa, sintering time 30min, obtains tungsten alloy base material.
Base material pre-processes, and the base material pretreatment can be ground polishing, ultrasonic cleaning and ion source cleaning successively.Institute Grinding and polishing is stated, can base material be first subjected to corase grinding 10min on the boart boart wheel disc of 600 mesh, then in the Buddha's warrior attendant of 1200 mesh Fine grinding 10min is carried out on stone sand wheel disc, then be polished with the diamond polishing powder of W2.5 it is uniformly bright to specimen surface, it is described It is cleaned by ultrasonic, the base material after grinding and polishing can be cleaned in the following order, it is clear that acetone is cleaned by ultrasonic 5min → absolute ethyl alcohol ultrasound It is for use to wash 5min → drying, ion source cleaning can be used hall ion source and carry out cleaning 5min to base material, pressure for 2 × 10-2Pa, base material temperature are 300 DEG C, and argon gas flux is 10sccm, is biased as -100V, cathode current 29.5A, and cathode voltage is 19V, anode current 7A, anode voltage 80V to remove the adsorbed gas of substrate surface and impurity, improve depositing coating With the bond strength and quality of forming film of base material.
Rare-earth mamem target is prepared, which is made of titanium, nickel, aluminium, yttrium, chromium, element silicon；It presses Parts by weight include following component：55 parts of titanium, 10 parts of nickel；6 parts of aluminium；1 part of yttrium, 4 parts of chromium；1 part of silicon；It is prepared using smelting process dilute Native memorial alloy target.
Using above-mentioned alloy target material, using magnetically controlled sputter method, the rare earth memory that film-form is formed on above-mentioned base material is closed Layer gold：It is evacuated to 10-4More than Pa is filled with nitrogen, is then evacuated to 10 again-4Pa, adjustment operating voltage are 500V, are sputtered Duty ratio 65%, proceeds by sputtering sedimentation, and control thickness is 150 μm of rare-earth mamem layers for obtaining film-form.
Start rolling machine system, set the speed of top and bottom rolls than being 1.2, set each rolling deformation amount as 2%；Set low speed The speed of roller is 0.05m/s, starts the operation of rolling with the tungsten nickel of rare-earth mamem layer；After primary rolling, weight Rolling 3 times is carried out again, and in the operation of rolling, it is -30 to -20 degrees Celsius to keep environment temperature；It is carried out at Low Temperature Thermal at 150 degrees Celsius 1h is managed, obtains product.
Embodiment two
The tungsten alloy material base material of the present embodiment is made of following components by weight percent：Fisher particle size is 95 parts of the WC powder of 1-1.5um, is taken Co powder 12 part of family name's granularity for 0.5-0.8um, 2 parts of Si powder, 1 part of graphite powder.
Each material component is chosen by above-mentioned material formula.
1Kg agitating ball mills are selected, first add in Si powder, C powder and Co powder, is used as and grinds in the ratio addition amylalcohol of 500ml/kg Grinding media, by ratio of grinding media to material example 5：1 adds in mill ball, is stirred grinding, grinds bulb diameter D7, ball mill mixing speed 480rpm, fill factor 0.85 are ground 1 hour.
Then it adds tungsten carbide to grind 7 hours, forms slurry, form slurry.
Filtering, drying, the mesh number of filtering is 50 mesh, and drying temperature is 85 DEG C, and carbide alloy mixture grain is made.
By carbide alloy mixture grain by being molded or squeezing or injection molding, hard alloy blank is made.
Hard alloy blank is entered into sintering furnace and is sintered molding, sintering temperature during sinter molding is 1425 DEG C, Ar Pressure is 10Mpa, sintering time 100min, obtains tungsten alloy base material.
Base material pre-processes, and the base material pretreatment can be ground polishing, ultrasonic cleaning and ion source cleaning successively.Institute Grinding and polishing is stated, can base material be first subjected to corase grinding 10min on the boart boart wheel disc of 600 mesh, then in the Buddha's warrior attendant of 1200 mesh Fine grinding 10min is carried out on stone sand wheel disc, then be polished with the diamond polishing powder of W2.5 it is uniformly bright to specimen surface, it is described It is cleaned by ultrasonic, the base material after grinding and polishing can be cleaned in the following order, it is clear that acetone is cleaned by ultrasonic 5min → absolute ethyl alcohol ultrasound It is for use to wash 5min → drying, ion source cleaning can be used hall ion source and carry out cleaning 5min to base material, pressure for 2 × 10-2Pa, base material temperature are 300 DEG C, and argon gas flux is 10sccm, is biased as -100V, cathode current 29.5A, and cathode voltage is 19V, anode current 7A, anode voltage 80V to remove the adsorbed gas of substrate surface and impurity, improve depositing coating With the bond strength and quality of forming film of base material.
Rare-earth mamem target is prepared, which is made of titanium, nickel, aluminium, yttrium, chromium, element silicon；It presses Parts by weight include following component：65 parts of titanium, 12 parts of nickel；9 parts of aluminium；3 parts of yttrium, 6 parts of chromium；2 parts of silicon；It is prepared using smelting process dilute Native memorial alloy target.
Using above-mentioned alloy target material, using magnetically controlled sputter method, the rare earth memory that film-form is formed on above-mentioned base material is closed Layer gold：It is evacuated to 10-4More than Pa is filled with nitrogen, is then evacuated to 10 again-4Pa, adjustment operating voltage are 500V, are sputtered Duty ratio 68%, proceeds by sputtering sedimentation, and control thickness is 250 μm of rare-earth mamem layers for obtaining film-form.
Start rolling machine system, set the speed of top and bottom rolls than being 1.5, set each rolling deformation amount as 3%；Set low speed The speed of roller is 0.1m/s, starts the operation of rolling with the tungsten nickel of rare-earth mamem layer；After primary rolling, repeat Rolling 5 times is carried out, in the operation of rolling, it is -20 degrees Celsius to keep environment temperature；Low Temperature Heat Treatment 2h is carried out at 200 degrees Celsius, is obtained To product.

Claims (1)

1. a kind of preparation method for the tungsten alloy for having memory alloy layer, the tungsten alloy base material are made of following components by weight percent：Take WC powder 90-95 part of family name's granularity for 1-1.5um, Co powder 8-12 part of the Fisher particle size for 0.5-0.8um, 1-2 parts of Si powder, graphite 0.5-1 parts of powder；
This method comprises the following steps：
（1）Prepare tungsten alloy base material
Each material component is chosen by above-mentioned material formula；
1Kg agitating ball mills are selected, first add in Si powder, C powder and Co powder, amylalcohol is added in as grinding medium in the ratio of 500ml/kg Matter, by ratio of grinding media to material example 5：1 adds in mill ball, is stirred grinding, grinds bulb diameter D7, and ball mill mixing speed 480rpm is filled out It is 0.85 to fill coefficient, is ground 1 hour；
Then it adds tungsten carbide to grind 5-7 hours, forms slurry, form slurry；
Filtering, drying, the mesh number of filtering is 40-50 mesh, and drying temperature is 70-85 DEG C, and carbide alloy mixture grain is made；
By carbide alloy mixture grain by being molded or squeezing or injection molding, hard alloy blank is made；
Hard alloy blank is entered into sintering furnace and is sintered molding, sintering temperature during sinter molding is 1400-1425 DEG C, Ar Pressure is 8-10Mpa, sintering time 30-100min, obtains tungsten alloy base material；
（2）Base material pre-processes
The base material pretreatment can be ground polishing, ultrasonic cleaning and ion source cleaning successively；
（3）Prepare rare-earth mamem target
The rare-earth mamem target is made of titanium, nickel, aluminium, yttrium, chromium, element silicon；
Include following component by weight：55-65 parts of titanium, 10-12 parts of nickel；6-9 parts of aluminium；1-3 parts of yttrium, 4-6 parts of chromium；1-2 parts of silicon；
Rare-earth mamem target is prepared using smelting process；
（4）Using above-mentioned alloy target material, using magnetically controlled sputter method, the rare-earth mamem of film-form is formed on above-mentioned base material Layer：
It is evacuated to 10-4More than Pa is filled with nitrogen, is then evacuated to 10 again-4Pa, adjustment operating voltage are 500V, and sputtering accounts for Sky proceeds by sputtering sedimentation, control thickness is the 150-250 μm of rare-earth mamem layer for obtaining film-form than 65-68%；
Start rolling machine system, set the speed of top and bottom rolls than being 1.2-1.5, set each rolling deformation amount as 2-3%；It sets low The speed of fast roller is 0.05-0.1m/s, starts the operation of rolling with the tungsten nickel of rare-earth mamem layer；Once rolled Afterwards, repeat to roll 3-5 times, in the operation of rolling, it is -30 to -20 degrees Celsius to keep environment temperature；At 150-200 degrees Celsius Low Temperature Heat Treatment 1-2h is carried out, obtains product.
CN201810187219.5A 2018-03-07 2018-03-07 A kind of preparation method for the tungsten alloy for having memory alloy layer Pending CN108251814A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105671400A (en) * 2014-11-21 2016-06-15 河南省大地合金股份有限公司 Preparation method for high-abrasion-resistance hard alloy
CN105886870A (en) * 2016-06-26 2016-08-24 苏州思创源博电子科技有限公司 Preparation method of tungsten alloy with CrAlSiN composite coating
CN105970063A (en) * 2016-06-04 2016-09-28 苏州思创源博电子科技有限公司 Method for preparing coated tungsten alloy material
CN106319464A (en) * 2016-08-20 2017-01-11 苏州思创源博电子科技有限公司 Method for preparing barium titanate film on tungsten alloy substrate
CN106591627A (en) * 2016-12-31 2017-04-26 镇江市丹徒区硕源材料科技有限公司 High-strength shape memory alloy and preparing method and application thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105671400A (en) * 2014-11-21 2016-06-15 河南省大地合金股份有限公司 Preparation method for high-abrasion-resistance hard alloy
CN105970063A (en) * 2016-06-04 2016-09-28 苏州思创源博电子科技有限公司 Method for preparing coated tungsten alloy material
CN105886870A (en) * 2016-06-26 2016-08-24 苏州思创源博电子科技有限公司 Preparation method of tungsten alloy with CrAlSiN composite coating
CN106319464A (en) * 2016-08-20 2017-01-11 苏州思创源博电子科技有限公司 Method for preparing barium titanate film on tungsten alloy substrate
CN106591627A (en) * 2016-12-31 2017-04-26 镇江市丹徒区硕源材料科技有限公司 High-strength shape memory alloy and preparing method and application thereof

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