CN108242412B - Semiconductor element curing apparatus, substrate processing system, and semiconductor element curing method - Google Patents
Semiconductor element curing apparatus, substrate processing system, and semiconductor element curing method Download PDFInfo
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- CN108242412B CN108242412B CN201611215254.0A CN201611215254A CN108242412B CN 108242412 B CN108242412 B CN 108242412B CN 201611215254 A CN201611215254 A CN 201611215254A CN 108242412 B CN108242412 B CN 108242412B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
Abstract
A semiconductor device curing apparatus, a substrate processing system and a semiconductor device curing method are provided. The semiconductor element curing device comprises a shell and a plurality of lamp cap assemblies. The shell is provided with a ventilation opening and a plurality of lamp holder cover bodies. The lamp cap cover body extends into the shell from the edge of the ventilation opening and is provided with at least one through hole. The lamp cap assembly is arranged in the shell and is configured to emit ultraviolet rays towards a direction which is substantially far away from the ventilation opening. The lamp cap cover body at least partially covers the lamp cap assembly respectively.
Description
Technical Field
The present disclosure relates to a semiconductor device curing apparatus and a substrate processing system, and more particularly, to a semiconductor device curing method.
Background
Silicon-containing materials, such as silicon oxide, carbon silicide, or carbon-doped silicon oxide layers, are often used in the manufacture of semiconductor devices. Silicon-containing layers may be deposited on a semiconductor substrate by various processes, for example, by Chemical Vapor Deposition (CVD). For example, a semiconductor substrate is placed in a chemical vapor deposition chamber and silicon-containing compounds along with an oxygen source are provided to react with each other to deposit a silicon oxide layer over the substrate. In some embodiments, an organosilicate source may also be used to deposit compounds having carbon-silicon bonds. The layers deposited by the chemical vapor deposition process may also be stacked on top of each other to form a composite layer. In some manufacturing processes, one or more layers formed by the deposition process may be cured, densified, and/or released from internal stresses present therein by Ultraviolet (UV) radiation. In addition, some by-products (e.g., hydroxides, organic debris, or off-design bonds) generated during the deposition process may be reduced or eliminated by UV radiation. Curing or densifying layers made by chemical vapor deposition processes using ultraviolet radiation may also reduce heat buildup in the wafer and reduce semiconductor device fabrication time.
Since the uv radiation source used for curing typically generates heat that affects both the semiconductor components being processed and the components that generate the uv radiation source (e.g., reducing the useful life of the components). Therefore, reducing and controlling the amount of heat generated by the ultraviolet radiation source is a problem that those skilled in the art have been faced with.
Disclosure of Invention
According to some embodiments of the present disclosure, a semiconductor device curing apparatus for a semiconductor device includes a housing and a plurality of lamp head assemblies. The shell is provided with a ventilation opening and a plurality of lamp holder cover bodies. The lamp cap cover body extends into the shell from the edge of the ventilation opening and is provided with at least one through hole. The lamp cap assembly is arranged in the shell and is configured to emit ultraviolet rays towards a direction which is substantially far away from the ventilation opening. The lamp cap cover body at least partially covers the lamp cap assembly respectively.
According to other embodiments of the present disclosure, a substrate processing system includes a chamber, a housing, and a plurality of lamphead assemblies. The chamber has a light transmitting portion. The shell is fixed on the cavity and covers the light penetration part. One side of the shell, which is far away from the cavity, is provided with a ventilation opening and a plurality of lamp holder covers. The lamp cap cover body extends into the shell from the edge of the ventilation opening. The lamp cap assembly is arranged in the shell and is configured to emit ultraviolet rays into the cavity through the light penetrating part. The lamp cap cover body at least partially covers the lamp cap assembly respectively and is provided with at least one through hole respectively.
In accordance with still further embodiments of the present disclosure, a method for curing a semiconductor device includes placing a substrate having a dielectric layer formed thereon in a chamber. The chamber has a light transmitting portion. The dielectric layer is cured by irradiating the substrate with ultraviolet rays through the light-transmitting portions by using a plurality of lamp cap assemblies of an ultraviolet curing system. The ultraviolet curing system includes a housing. The shell is fixed on the cavity and covers the light penetration part. One side of the shell body relative to the cavity is provided with an air inlet opening and a plurality of lamp cap covers. The lamp cap cover body extends into the shell from the edge of the air inlet opening. The lamp holder assembly is arranged in the shell. The lamp cap covers at least cover the lamp cap components respectively and are provided with at least one through hole respectively. The heat flow generated by the lamp head assembly is communicated with the cooling air outside the shell through the ventilation opening and the through hole.
Drawings
FIG. 1 illustrates a perspective view of a substrate processing system according to some embodiments of the present disclosure;
fig. 2 illustrates a perspective view of a semiconductor device curing apparatus and chamber in accordance with some embodiments of the present disclosure;
FIG. 3 is a cross-sectional view taken along line 2-2 of FIG. 2;
FIG. 4 illustrates a perspective view of a portion of a housing, according to some embodiments of the present disclosure;
5A-5F illustrate partial, structural top views of a housing according to some embodiments of the present disclosure;
fig. 6 is a flow chart illustrating a method for curing a semiconductor device according to some embodiments of the present disclosure.
Detailed Description
The following description will provide many different embodiments or examples for implementing the subject matter of the present disclosure. Specific examples of components and arrangements are discussed below to simplify the present disclosure. Of course, these descriptions are merely exemplary in nature and the disclosure is not limited thereto. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, as well as embodiments in which other features may be formed between the first and second features, in which case the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and configurations discussed.
Spatially relative terms, such as "below," "lower," "upper," and the like, may be used herein for convenience in describing the relationship of one element or feature to another element or feature in the figures. Spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. That is, when the device is oriented differently than the figures (rotated 90 degrees or at other orientations), the spatially relative terms used herein should be interpreted accordingly.
Please refer to fig. 1. Fig. 1 illustrates a perspective view of a substrate processing system 1 according to some embodiments of the present disclosure. As shown, in the present embodiment, the substrate processing system 1 includes a chamber 16 and a curing system assembly 10. The structure, function, and connection between the elements will be described in detail below.
Please refer to fig. 2. Fig. 2 illustrates a perspective view of the chamber 16 and curing system assembly 10, according to some embodiments of the present disclosure. As shown, in the present embodiment, the chamber 16 includes a main body 162 and a cover 164. The cover 164 is connected to the body 162. In some embodiments, the cover 164 may be hinged to the main body 162, but the disclosure is not limited to this connection. In addition, the curing system assembly 10 includes a first housing 18 (two shown) and a semiconductor device curing apparatus 10a (two shown). The first housing 18 is coupled to an upper surface of the cover 164 of the chamber 16 remote from the body 162. That is, the first housing 18 is coupled to the surface 164a of the cover 164. The semiconductor device curing apparatus 10a is disposed above the first housing 18 and is used to process one or more substrates (not shown) in the chamber 16. Further, the semiconductor element curing device 10a supplies ultraviolet radiation. Ultraviolet radiation passes through first housing 18 and into body 162 of chamber 16. One or more substrates disposed in the body 162 receive the ultraviolet radiation provided by the semiconductor device curing apparatus 10 a.
In the present embodiment, the semiconductor device curing apparatus 10a further includes a vent opening 120. The ventilation opening 120 opens out on the side of the second housing 12 facing away from the chamber 16. That is, the vent opening 120 opens at a top location 126 of the second housing 12. In contrast, the first housing 18 includes an air outlet opening 124. The air outlet opening 124 opens at a side surface 184 of the first housing 18. In practical applications, the ultraviolet lamp 1400 (see fig. 3) of the present embodiment radiates heat energy. The vent opening 120 and the vent opening 124 are configured to flow cooling gas into the semiconductor device curing apparatus 10a to remove excess heat in the semiconductor device curing apparatus 10 a. The temperature of the cooling gas may be room temperature or any temperature suitable for cooling the internal space of the cooling semiconductor element curing device 10 a. Further, a central pressurized gas source (not shown) provides sufficient gas flow to the vent opening 120 to ensure that the ultraviolet bulb 1400 (see fig. 3) or any power source and components associated with the ultraviolet bulb 1400 of the present disclosure can operate properly at operating temperatures.
In contrast, the gas outlet opening 124 receives the gas discharged from the semiconductor element curing apparatus 10 a. The aforementioned exhaust gas is collected by an exhaust system (not shown). The exhaust system may include a scrubber device (not shown). The scrubber device removes ozone generated by the uv bulb 1400. In addition, cooling the ultraviolet bulb 1400 with a cooling gas that does not include oxygen (e.g., nitrogen, argon, helium, any suitable gas, or any combination of the foregoing gases) may avoid ozone that may be generated by the ultraviolet bulb 1400. However, the present disclosure is not limited to the foregoing configurations. In other embodiments, the central pressurized gas source may be configured to provide sufficient gas flow to the gas outlet opening 124, while the vent opening 120 may receive gas exhausted from the semiconductor device curing apparatus 10 a.
In detail, please refer to fig. 3. Fig. 3 is a cross-sectional view taken along line 2-2 of fig. 2. As shown, in this embodiment, the chamber 16 also has a light transmissive portion 160 and a substrate support 166. A substrate support 166 is positioned within the chamber 16. The light transmitting portion 160 is located between the substrate support 166 and the semiconductor device curing apparatus 10 a. For example, the light transmissive portion 160 of the chamber 16 may be a quartz window, but the disclosure is not limited thereto. In other embodiments, any suitable device through which the ultraviolet light provided by the semiconductor device curing apparatus 10a can pass can be used in the present disclosure. In addition, the substrate 15 is placed on the substrate support 166 while the substrate processing system 1 is processing.
In the present embodiment, the first casing 18 further includes a first reflector 180. In detail, the first reflector 180 is disposed between the semiconductor device curing apparatus 10a and the chamber 16. The lower edge of the first reflector 180 has an inner diameter D2 that is less than the diameter D1 of the substrate 15. A gap 182 is formed between the light penetration portion 160 and the bottom of the first reflector 180. The airflow in the semiconductor device curing apparatus 10a may surround the first reflector 180 and further flow into the first reflector 180 through the gap 182, thereby assisting the cooling of the first reflector 180.
In the present embodiment, the semiconductor device curing apparatus 10a further includes a second housing 12, a plurality of lamp head assemblies 14 (two shown), and a controller 19. The second housing 12 of the semiconductor element curing apparatus 10a is fixed to the first housing 18 and covers the light transmitting portion 160 of the chamber 16. In other words, the light transmitting portion 160 is disposed between the lamp head assembly 14 and the substrate support 166. However, the disclosure is not limited thereto. In some embodiments, the second housing 12 of the semiconductor device curing apparatus 10a may also be directly fixed on the cavity 16 to cover the light transmitting portion 160 of the cavity 16, and the first housing 18 is omitted. Therefore, the user can flexibly arrange the first housing 18 according to the actual use situation.
In fig. 3, the lamp head assemblies 14 are disposed in the second housing 12, and each lamp head assembly 14 includes a lamp head 140 and a microwave generator 142. The lower surface of the lamp head 140 is coupled to the first reflector 180, and the lamp head 140 includes an ultraviolet bulb 1400 and a second reflector 144. In the present embodiment, the ultraviolet lamps 1400 are elongated lamps for generating ultraviolet radiation, and each lamp head assembly 14 includes one ultraviolet lamp 1400. However, the structural configuration of the ultraviolet lamp 1400 of the present disclosure is not limited thereto. In other embodiments, the shape of the ultraviolet bulb 1400 may be any suitable shape, and the number of the ultraviolet bulbs 1400 may be plural.
In some embodiments, the UV bulb 1400 may be a microwave arc lamp, a pulsed xenon flash lamp, a high power UV LED array, or any suitable device. In some embodiments, the ultraviolet bulb 1400 may be a sealed plasma bulb filled with one or more gases (e.g., xenon or mercury), and the one or more gases may be excited by the microwave generator 142. For example, a high voltage power supply may provide a voltage to the microwave generator 142, whereby the microwave generator 142 may generate microwaves to excite the gas in the UV bulb 1400, thereby generating UV radiation for curing the substrate 15 being processed.
Further, the ultraviolet bulb 1400 may be designed to emit ultraviolet rays in a wide frequency band. For example, the ultraviolet light may have a wavelength substantially from about 180nm to about 400nm, but the present disclosure is not limited to this bandwidth. In addition, the gas selected for the ultraviolet bulb 1400 may be substantially determined by the wavelength of the radiation emitted by the ultraviolet bulb 1400. Since the shorter wavelength ultraviolet rays easily cause the generation of ozone when oxygen is present in the semiconductor element curing device 10 a. Therefore, the ultraviolet light emitted from the ultraviolet lamp 1400 is adjusted to generate a broad band of ultraviolet light with a wavelength of 200nm or more, so as to avoid the generation of ozone during the curing process.
In addition, the second reflector 144 is disposed above the ultraviolet bulb 1400, surrounds the ultraviolet bulb 1400, and is adapted to guide ultraviolet rays emitted from the ultraviolet bulb 1400 through the light transmitting portion 160 toward the substrate support 166. In some embodiments, the second reflector 144 may have the appearance of a reflective cup, but the disclosure is not limited thereto. In addition, the output or intensity of the uv bulb 1400 is controlled by the respective controller 19, but the disclosure is not limited thereto. In the present embodiment, each lamp head 140 of each lamp head assembly 14 is shown with its own controller 19, but may be controlled using a single controller. As such, the lamp head 140 is configured to emit ultraviolet radiation into the chamber 16 through the light penetration portion 160. That is, the lamp head assembly 14 is configured to emit ultraviolet radiation in a direction substantially away from the vent opening 120 of the second housing 12.
In the present embodiment, the semiconductor device curing apparatus 10a further includes a filter 148. The filter 148 is located under the ultraviolet bulb 1400, the second reflector 144 and the cavity 146. The filter 148 is used to allow the ultraviolet rays to pass through and to block the microwaves from passing through (or other radio frequency from passing through). The aforementioned microwave or radio frequency oscillation frequency range is substantially about 3kHz to about 300 GHz. For example, the material of the filter 148 may be white iron or alloy steel containing 10% to 30% chromium, and the appearance of the filter 148 may be a mesh screen. However, the filter 148 of the present disclosure is not limited to the foregoing materials and structural configurations. In other embodiments, suitable devices that allow uv light to pass through and block microwaves from passing through can be used in the present disclosure.
In some embodiments, the microwave generator 142 may include one or more magnetrons (not shown). The magnetron in the microwave generator 142 is used to excite the gas in the uv bulb 1400 to generate uv radiation. Alternatively, a Radio Frequency (RF) energy source may be used instead of the microwave generator 142 to excite the gas in the uv bulb 1400 to generate uv radiation. Radio frequency and microwave radiation may be considered electromagnetic radiation. The foregoing radio frequencies range substantially from about 3kHz (kilohertz) to about 300MHz (Megaertz). The foregoing microwave radiation may have a frequency in the range of substantially about 300MHz to about 300GHz (gigahertz). However, the radio frequency described in the present disclosure may also include a wider frequency range.
In the present embodiment, the two lamp head assemblies 14 are each tilted in opposite directions by an angle a with respect to the axis Y. With the above-described configuration, there may be more space in the semiconductor device curing apparatus 10a near the lower portion of the ventilation opening 120 to provide cooling air to circulate around the two lamp head assemblies 14, so as to provide more cooling air to remove the excess heat in the semiconductor device curing apparatus 10 a. Thereby, normal operation of the ultraviolet light bulb 1400 of the present disclosure or normal operation of any power supply and components associated with the bulb 1400 may be ensured. In addition, the two lamp heads 140 are substantially closer to the center of the substrate 15, thereby improving the concentration of the ultraviolet radiation.
In some embodiments, the aforementioned inclination angle a may be substantially between about 2 degrees and about 25 degrees. For example, the angle a may be substantially between about 2 degrees and about 5 degrees, between about 5 degrees and about 10 degrees, between about 10 degrees and about 15 degrees, between about 15 degrees and about 20 degrees, or between about 20 degrees and about 25 degrees. However, the present disclosure is not limited to the angle a. In practice, the tilt angles a of the two lamp head assemblies 14 in opposite directions with respect to the axis Y can be flexibly configured according to individual conditions.
In fig. 3, a plurality of cap covers 122 (two are shown) are disposed on a side of the second housing 12 facing away from the cavity 16. The two cap covers 122 extend from the edge of the ventilation opening 120 into the second housing 12, respectively partially cover the microwave generator 142 of the cap assembly 14, and respectively have a first cover 1222 and a second cover 1224. Further, the first cover portion 1222 of the cap cover 122 is substantially parallel to the top portion 126 of the second housing 12, partially covers the top surface 142a of the microwave generator 142, and is partially exposed by the ventilation opening 120.
In other words, when the second housing 12 is viewed from the end of the semiconductor device curing apparatus 10a away from the cavity 16, a portion of the first cover portion 1222 is shielded by the top portion 126 of the second housing 12. In other embodiments, the first cover portion 1222 of the cap cover 122 may completely cover the top surface 142a of the microwave generator 142. In the present embodiment, the first cover 1222 is spaced apart from the ventilation opening 120 by a first distance S1.
In addition, in the present embodiment, the second cover part 1224 of the cap cover 122 is located between the cap assemblies 14 and partitions the microwave generator 142 of the cap assemblies 14. Further, the second cover part 1224 partially covers the side surface 142b of the microwave generator 142, and is substantially parallel to the side surface 142 b. The two second cover parts 1224 are spaced apart from each other by a second distance S2, and the second distance S2 is gradually smaller toward the cavity 16. In other embodiments, the second cover portion 1224 can completely cover the side surface 142b of the microwave generator 142. However, the structural configurations of the first cover portion 1222 and the second cover portion 1224 of the present disclosure are not limited to the foregoing. In other embodiments, the position relationship between the first cover portion 1222, the second cover portion 1224, and other elements may be flexibly configured according to actual requirements.
In detail, please refer to fig. 3 and fig. 4 simultaneously. Fig. 4 illustrates a perspective view of a portion of the second housing 12 according to some embodiments of the present disclosure. As shown in the drawing, in the present embodiment, the cap cover 122 further includes a first curved portion 1221, a second curved portion 1223, and an opening 1228. The first curved portion 1221 is connected between the top portion 126 (see fig. 3) of the second housing 12 and the first cover portion 1222, and is located above the top surface 142a of the microwave generator 142. The center of curvature of the first curved portion 1221 is located on the side of the second housing 12 away from the chamber 16 and outside the second housing 12.
In addition, in the present embodiment, the second curved portion 1223 is connected between the first cover portion 1222 and the second cover portion 1224, and a portion of the second curved portion 1223 is exposed by the ventilation opening 120. The center of curvature of the second curved portion 1223 is close to the top surface 142a of the microwave generator 142 and is located within the second housing 12. In other words, the two second curved portions 1223 are curved respectively in a direction away from the top portion 126 of the second housing 12. The second cover portion 1224 of the lamp head cover 122 has an opening 1228 at an end thereof adjacent the cavity 16, and the opening 1228 is substantially rectangular. However, the structural arrangement of the first curved portion 1221, the second curved portion 1223 and the opening 1228 of the present disclosure is not limited to the foregoing. In other embodiments, the first curved portion 1221, the second curved portion 1223, and the opening 1228 may be configured elastically according to actual requirements. Thus, by structurally configuring the lamp head cover 122, the cooling gas in the curing system assembly 10 can be guided to carry away the excess heat in the curing system assembly 10 to the outside of the curing system assembly 10, so that the components in the curing system assembly 10 can be cooled to a suitable operating temperature.
In the present embodiment, each cap cover 122 has at least one through hole 1220. The through hole 1220 is formed through the first cover portion 1222 of the cap cover 122. In some embodiments, the through hole 1220 may also be formed through the second cover portion 1224 of the cap cover 122. In other embodiments, the through hole 1220 may be disposed at any suitable position on the cap cover 122 according to actual requirements. In addition, in the present embodiment, the through holes 1220 of the cap cover 122 are located between the cap assembly 14 and the ventilation opening 120 of the second housing 12. That is, the orthogonal projection of the ventilation opening 120 of the second casing 12 on the cap cover 122 completely covers the through hole 1220 of the cap cover 122. In other embodiments, the through hole 1220 of the cap cover 122 may be partially located between the cap assembly 14 and the ventilation opening 120 of the second shell 12. That is, the through hole 1220 of the cap cover 122 is partially covered by the orthogonal projection of the ventilation opening 120 of the second housing 12 on the cap cover 122.
In the present embodiment, the through holes 1220 of the cap cover 122 are circular, and the number of the through holes 1220 is one, but the disclosure is not limited thereto. Please refer to fig. 5A to 5F. Fig. 5A-5F illustrate partial structural top views of the second housing 12 according to some embodiments of the present disclosure. As shown, in some embodiments, the through holes 1220 of the cap cover 122 may be triangular, rectangular or prismatic, and the number of the through holes 1220 may be plural, for example: two or three. However, the structural configuration of the through hole 1220 in the present disclosure is not limited to the foregoing. In other embodiments, the shape of the through holes 1220 may be any suitable shape, and the number of the through holes 1220 may be greater than 3.
Please refer back to fig. 3 and 4. Further, as shown in the figure, in the present embodiment, a connection portion 1226 is further disposed between the two cap covers 122. The connecting portion 1226 is located at one end of the second cover portion 1224 near the cavity 16, connects the two second cover portions 1224, and is substantially parallel to the top portion 126 of the second housing 12. In detail, in each cap cover 122, the second cover portion 1224 is located between the connecting portion 1226 and the second curved portion 1223. Further, the two openings 1228 of the cap cover 122 are adjacent to the connection portions 1226. That is, the connecting portion 1226 is located between the two openings 1228.
In this embodiment, the cap cover 122 may form a channel 1225. The passage 1225 is located between the two cap covers 122. The width of the channel 1225 is defined by the distance between the corresponding two first curved portions 1221, the distance between the two first cover portions 1222, the distance between the two second curved portions 1223, and the second distance S2 between the two second cover portions 1224, respectively. Further, the length of the passage 1225 is defined by the distance between the vent opening 120 and the connection 1226.
In fig. 4, the width of the passage 1225 is gradually reduced along the direction C1, so that the pressure and flow rate of the cooling gas are changed. For example, the flow rate near the first curved portion 1221 is greater than the flow rate near the connecting portion 1226. The air pressure near the first curved portion 1221 is smaller than the air pressure near the connecting portion 1226. By the structural configuration of the passage 1225 and through the perforations 1220 and openings 1228 of the lamp head cover 122, cooling gas may flow in the direction C1 and the direction C2 as it enters the curing system assembly 10 through the vent openings 120 (see fig. 2).
Thus, by structurally configuring the lamp head cover 122, the cooling gas in the curing system assembly 10 can be guided to carry away the excess heat in the curing system assembly 10 to the outside of the curing system assembly 10, so that the components (e.g., the lamp head 140, the microwave generator 142, the first reflector 180, or the second reflector 144) in the curing system assembly 10 can be cooled to a suitable operating temperature. In the present embodiment, the temperature in the cooled curing system component 10 may be substantially between about 25 ℃ and about 55 ℃. For example, the aforementioned temperature range may be between about 25 ℃ and about 30 ℃, between about 30 ℃ and about 35 ℃, between about 35 ℃ and about 40 ℃, between about 40 ℃ and about 45 ℃, between about 45 ℃ and about 50 ℃, or between about 50 ℃ and about 55 ℃. However, the present disclosure is not limited to the aforementioned temperature ranges. In other embodiments, any suitable temperature range may be used with the present disclosure. In addition, the above-described configuration also reduces temperature disturbances in the curing system assembly 10, thereby stabilizing the operation of the various components of the curing system assembly 10 and further stabilizing the efficiency of the ultraviolet lamp 1400 in generating ultraviolet radiation.
Please refer to fig. 6. Fig. 6 is a flow chart illustrating a method for curing a semiconductor device according to some embodiments of the present disclosure. Although the disclosed semiconductor device curing methods are depicted and described herein as a series of steps or events, it will be appreciated that the depicted order of such steps or events is not to be interpreted in a limiting sense. For example, some steps may occur in different orders and/or concurrently with other steps or events apart from those illustrated and/or described herein. In addition, not all illustrated acts may be required to implement one or more aspects or implementations described herein. Further, one or more of the steps depicted herein may be implemented in one or more separate steps and/or stages. Specifically, the method for curing a semiconductor device includes steps 1001 to 1003.
In step 1001, the substrate 15 with the dielectric layer formed thereon is placed in a chamber. In addition, the chamber has a light penetration portion 160. Furthermore, fig. 3 shows some embodiments corresponding to steps 1001 to 1003.
In step 1002, the plurality of burner assemblies 14 of the semiconductor device curing apparatus 10a are irradiated with ultraviolet rays toward the substrate 15 through the light transmitting portions 160 to cure the dielectric layer. The ultraviolet curing system includes a second housing 12. The second housing 12 is fixed to the chamber 16 and covers the light transmitting portion 160. The second housing 12 has a vent opening 120 and a plurality of cap covers 122 on a side opposite the cavity 16. The cap cover 122 extends from the edge of the vent opening 120 into the second housing 12. A lamp head assembly 14 is disposed in the second housing 12. The cap covers 122 at least cover the cap assemblies 14 respectively and have at least one through hole 1220 respectively.
In step 1003, the heat generated by the lamp head assembly 14 is exhausted out of the second housing 12 through the through hole 1200 via the vent opening 120. That is, the heat generated by the lamp head assembly 14 is circulated to the cooling gas outside the second housing 12 through the ventilation openings 120 and the through holes 1200.
As is apparent from the above detailed description of the embodiments of the present disclosure, the semiconductor device curing apparatus of the present disclosure includes a cap body. The lamp cap cover body comprises a first cover body part, a second cover body part and a through hole penetrating through the first cover body part. Thus, with the above-described configuration, the cooling gas in the curing system assembly can be directed to carry away excess heat from the curing system assembly, thereby allowing the components in the curing system assembly to be cooled to a suitable operating temperature. In addition, the above-mentioned structural configuration can reduce the temperature disturbance in the curing system component, thereby stabilizing the operation of each element in the curing system component, further stabilizing the efficiency of the ultraviolet lamp for generating the ultraviolet radiation, and prolonging the service life of each element in the curing system component.
The foregoing features of the various embodiments will enable those skilled in the art to better understand the various aspects of the present disclosure, and it will be appreciated by those skilled in the art that, in order to achieve the same purpose and/or achieve the same advantages of the embodiments set forth herein, that other processes and structures may be readily devised or modified based on the present disclosure, and that various changes, substitutions, and alterations may be made hereto without departing from the spirit and scope of the present disclosure.
Claims (8)
1. A semiconductor device curing apparatus, comprising:
the lamp cap comprises a shell, a lamp cap body and a lamp cap cover, wherein the shell is provided with a ventilation opening and a plurality of lamp cap covers, the lamp cap covers extend into the shell from the edge of the ventilation opening, and each lamp cap cover is provided with a first cover body part, a second cover body part and at least one through hole; and
and a plurality of lamp cap assemblies disposed in the housing, wherein each of the lamp cap assemblies includes a microwave generator and is configured to emit ultraviolet light in a direction away from the ventilation opening, and the first cover portion and the second cover portion of each of the plurality of lamp cap covers at least partially a top surface of the corresponding microwave generator and at least one side surface of the corresponding microwave generator.
2. The semiconductor component curing apparatus of claim 1, wherein the perforations are located at least partially between the lamp head assembly and the vent opening.
3. The semiconductor device curing apparatus of claim 1, wherein the through-hole has a circular, oval, rectangular, trapezoidal, or triangular shape.
4. The semiconductor device curing apparatus of claim 1, wherein the second cover portion of the cap cover is positioned between the cap assemblies, separating the microwave generators of the cap assemblies.
5. A substrate processing system, comprising:
a chamber having a light transmitting portion;
the shell is fixed on the cavity and covers the light penetrating part, one side of the shell, which is far away from the cavity, is provided with a ventilation opening and a plurality of lamp cap covers, the lamp cap covers extend into the shell from the edge of the ventilation opening, and each lamp cap cover is provided with a first cover part and a second cover part; and
a plurality of lamp cap assemblies disposed in the housing, each of the lamp cap assemblies including a microwave generator and configured to emit ultraviolet light into the chamber through the light penetration portion, wherein the first cover portion and the second cover portion of each of the plurality of lamp cap covers at least partially cover a top surface of the corresponding microwave generator and at least one side surface of the corresponding microwave generator, and each of the plurality of lamp cap covers has at least one through hole.
6. The substrate processing system of claim 5, wherein the perforation is at least partially located between the microwave generator and the vent opening.
7. The substrate processing system of claim 5, wherein an orthographic projection of the vent opening on the lamp head cover at least partially covers the through hole.
8. A method for curing a semiconductor device, comprising:
placing a substrate with a dielectric layer formed thereon in a chamber, wherein the chamber has a light transmitting portion;
irradiating ultraviolet rays to the substrate through the light transmitting part by using a plurality of lamp cap assemblies of an ultraviolet curing system to cure the dielectric layer, wherein the ultraviolet curing system comprises a shell fixed on the chamber and covering the light penetration part, the shell is provided with a ventilation opening and a plurality of lamp cap covers at one side relative to the cavity, the lamp cap covers extend into the shell from the edge of the ventilation opening, and each has a first cover part and a second cover part, and the plurality of lamp cap components are arranged in the shell, the first cover part and the second cover part of each lamp cap cover respectively cover at least partially a top surface of the corresponding microwave generator and at least one side surface of the corresponding microwave generator, and the lamp cap covers respectively have at least one through hole; and
the heat generated by the lamp head assembly is communicated with the cooling gas outside the shell through the ventilation opening and the through hole.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2468703A (en) * | 2009-03-19 | 2010-09-22 | Gew | Ink curing apparatus with water cooled heat exchanging means |
| CN102017100A (en) * | 2008-04-22 | 2011-04-13 | 应用材料股份有限公司 | Method and apparatus for excimer curing |
| CN102132384A (en) * | 2008-09-18 | 2011-07-20 | 株式会社杰士汤浅国际 | Ultraviolet light irradiation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9287154B2 (en) * | 2012-06-01 | 2016-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | UV curing system for semiconductors |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102017100A (en) * | 2008-04-22 | 2011-04-13 | 应用材料股份有限公司 | Method and apparatus for excimer curing |
| CN102132384A (en) * | 2008-09-18 | 2011-07-20 | 株式会社杰士汤浅国际 | Ultraviolet light irradiation device |
| GB2468703A (en) * | 2009-03-19 | 2010-09-22 | Gew | Ink curing apparatus with water cooled heat exchanging means |
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