CN108242389A - The cleaning method of chip - Google Patents
The cleaning method of chip Download PDFInfo
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- CN108242389A CN108242389A CN201711445707.3A CN201711445707A CN108242389A CN 108242389 A CN108242389 A CN 108242389A CN 201711445707 A CN201711445707 A CN 201711445707A CN 108242389 A CN108242389 A CN 108242389A
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- Prior art keywords
- supply
- pure water
- chip
- ozone water
- hydrofluoric acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
Abstract
The present invention provides the cleaning method of chip, can inhibit to form the difference of height defect as caused by Ozone Water on chip.The present invention is the cleaning method for the chip for supplying cleaning solution on the surface of the chip while afer rotates are made, it is characterized in that, in aforementioned wafer surface, start the supply of hydrofluoric acid, before the supply for stopping aforementioned hydrofluoric acid or while stopping, start the supply of pure water, after the supply for stopping aforementioned hydrofluoric acid and before stopping the supply of aforementioned pure water, start the supply of Ozone Water, it sets in aforementioned wafer surface while during supplying pure water and Ozone Water, thereafter stop the supply of aforementioned pure water, Ozone Water is only supplied in aforementioned wafer surface.
Description
Technical field
The present invention relates to the cleaning method of chip, more particularly to using Ozone Water, hydrofluoric acid and pure water chip monolithic
Formula cleaning method.
Background technology
In the past, in the cleaning step of the semiconductor wafers such as silicon wafer, usually using Ozone Water, hydrofluoric acid, it is proposed that for example
Ozone Water cleaning and hydrofluoric acid clean is repeated to be cleaned the method so as to remove particle.In such method, pass through
Ozone Water cleans and forms oxidation film on a surface of a wafer, then, by hydrofluoric acid clean by oxidation film and of wafer surface
Grain etc. removes together.
But in such method, when switching cleaning solution, Ozone Water and hydrofluoric acid coexist on a surface of a wafer, in crystalline substance
Piece occurs the oxidation film carried out by Ozone Water and is formed and remove (etching) by the oxidation film that hydrofluoric acid carries out simultaneously on the surface,
Thus there are problems that surface roughness deterioration.
In addition, if making a return journey oxide film dissolving by hydrofluoric acid, then expose the naked face of chip, but particle is very easy to be attached to this
The naked face of chip.Therefore, it is smelly in chip peripheral part when reusing Ozone Water and being cleaned after removing oxide film dissolving by hydrofluoric acid
Oxygen water is flicked due to the water repellency in chip naked face, and Ozone Water will not successfully spread all over, as a result, in the presence of in chip peripheral part
The problem of residual particles.
Make technology to solve these problems, the cleaning method of chip has been recorded in patent document 1, has included the use of ozone
The cleaning step of water and using hydrofluoric acid cleaning step chip cleaning method in, by aforementioned using Ozone Water
There is the rotary-cleaning step using pure water, so as to according to (1) between cleaning step and the aforementioned cleaning step using hydrofluoric acid
Using the cleaning step of Ozone Water, (2) using the rotary-cleaning step of pure water, (3) using the cleaning step of hydrofluoric acid sequence
It is cleaned or is used according to (1) using the cleaning step of hydrofluoric acid, (2) using the rotary-cleaning step of pure water, (3) smelly
The sequence of the cleaning step of oxygen water is cleaned, which is characterized in that the stream of pure water in the aforementioned rotary-cleaning step using pure water
It is 1.2L/ minutes or more to measure, and the rotating speed of chip is 1, more than 000rpm.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2015-220284 bulletins.
Invention content
Problems to be solved by the invention
In technology described in patent document 1, by avoid Ozone Water and hydrofluoric acid coexist inhibit the chip after cleaning
The deterioration of surface roughness, in addition, by carrying out pure water rotary-cleaning with specific pure water flow and wafer rotation, it is pure so as to make
Water spreads all over the particle residue at the chip peripheral part after to chip peripheral part, improving cleaning.
However, the inventors of the present invention recognize：Cleaning solution is supplied on the surface of the chip while afer rotates are made
In the cleaning method (hereinafter also referred to as " rotary-cleaning ") of chip, as in the past be repeated Ozone Water cleaning and hydrogen
The method of hydrofluoric acid cleaning, the side for carrying out pure water cleaning between Ozone Water cleaning and hydrofluoric acid clean as described in Patent Document 1
In the case of method, the LPD (fleck defects in wafer inspection step thereafter is reduced：Light point defect) aspect deposit
In the limit.In the technology of patent document 1, the LPD caused by it should be able to reduce by particle, it can be considered that in the presence of by
LPD caused by certain defect in addition to particle.
The inventors of the present invention the chip after grinding is carried out previous cleaning method (Ozone Water cleaning → hydrofluoric acid clean →
Ozone Water is cleaned) after, the LPD observed at the wafer surface is investigated.It finds to exist big the results detailed in aftermentioned
The circular difference of height defect of amount as shown in Figure 6.It has been confirmed that such difference of height defect is regarded as asking with patent document 1
The particle of topic is different, can also be remained even across finishing cleaning step thereafter.Also, it to form the difference of height in order to find and lacks
The reason of falling into, the inventors of the present invention observe wafer surface during rotary-cleaning by high-speed camera in detail.As a result, it has been found that from
Hydrofluoric acid clean switches to the moment of Ozone Water cleaning, has caused following (A), (B) phenomenon.That is, the cleaning in (A) wafer surface
Liquid measure is reduced during only few, partly exposes naked silicon face；(B) when Ozone Water initially sprays from nozzle (injection)
Point, Ozone Water are released in the form of spraying, therefore the spraying is attached to naked silicon face, cause selective oxidation.The selective oxidation portion
Divide in cleaning step behind and be difficult to be etched, therefore shape on chip after cleaning by hydrofluoric acid treatment, SC1 processing
Into difference of height defect.
Therefore, the present invention in view of the above subject, and it is an object of the present invention to provide can inhibit on chip formed as caused by Ozone Water
The cleaning method of the chip of difference of height defect.
The method for solving problem
The inventors of the present invention are based on detailed research as described above, cleaning method are had studied, so that switching from hydrofluoric acid clean
The moment cleaned into Ozone Water even if generating spraying in the time point that Ozone Water is initially sprayed from nozzle, will not adhere to spraying
In naked silicon face.And obtained design is：It will carry out starting to supply to wafer surface supply pure water before Ozone Water is cleaned
To specified time limit is also continued to after Ozone Water, so as to make during supplying pure water to wafer surface with being weighed during ozone supply water
It is folded.According to this method, in the time point for being initially supplied Ozone Water, the whole face of chip is covered, therefore i.e. by the layer of an adequate amount of pure water
Make the spraying of generation Ozone Water, spraying will not be attached to naked silicon face.
Mainly consisting of for the present invention completed based on above-mentioned opinion is shown.
(1) cleaning method of chip is to supply cleaning solution on the surface of the chip while afer rotates are made
The cleaning method of chip, which is characterized in that
In aforementioned wafer surface, start the supply of hydrofluoric acid,
Before the supply for stopping aforementioned hydrofluoric acid or while stopping, starting the supply of pure water,
After the supply for stopping aforementioned hydrofluoric acid and before stopping the supply of aforementioned pure water, start the supply of Ozone Water, set
During pure water and Ozone Water being supplied in aforementioned wafer surface simultaneously,
Thereafter stop the supply of aforementioned pure water, Ozone Water is only supplied in aforementioned wafer surface.
(2) cleaning method of the chip according to above-mentioned (1), wherein, on aforementioned wafer surface, stopping aforementioned hydrogen
Start the supply of aforementioned pure water before the supply of fluoric acid, during setting supplies hydrofluoric acid and pure water simultaneously.
(3) cleaning method of the chip according to above-mentioned (2), wherein, on aforementioned wafer surface, stopping aforementioned hydrogen
Start the supply of aforementioned Ozone Water after the supply of fluoric acid, during setting is only supplied pure water.
(4) cleaning method of the chip according to any one of above-mentioned (1) ~ (3), wherein, before first jet ejection
Hydrofluoric acid is stated, sprays aforementioned pure water and aforementioned Ozone Water from the common nozzle different from aforementioned first jet.
(5) cleaning method of the chip according to any one of above-mentioned (1) ~ (3), wherein, respectively from respective nozzle
Spray aforementioned hydrofluoric acid, aforementioned pure water and aforementioned Ozone Water.
The effect of invention
The cleaning method of chip according to the present invention can inhibit to form the difference of height defect as caused by Ozone Water on chip.
Description of the drawings
Fig. 1 (A), (B) are the cleanings used in the cleaning method for show the chip described in an embodiment of the invention
The figure of the configuration example of the supply nozzle of liquid.
Fig. 2 (A), (B) are the one of the supply sequence of cleaning solution when showing to use the supply nozzle of Fig. 1 (A), (B) respectively
The figure of example.
Fig. 3 (A), (B) are its of the supply sequence of cleaning solution when showing to use the supply nozzle of Fig. 1 (A), (B) respectively
The figure of its example.
Fig. 4 is the figure of an example for the supply sequence for showing the cleaning solution in previous cleaning method.
Fig. 5 is the figure of other of the supply sequence for showing the cleaning solution in previous cleaning method.
Fig. 6 is the image as obtained from atomic force microscope (AFM) observes the difference of height defect as caused by Ozone Water.
Specific embodiment
The present invention relates to the rotary-cleanings by supplying cleaning solution on the surface of the chip while afer rotates are made
To clean the method for chip.The cleaning is suitble to checking and will polish chip obtained from chip progress mirror ultrafinish processing
It is carried out before (polished wafer).
In Fig. 1 (A), (B), the cleaning used in the cleaning method of the chip described in an embodiment of the invention is shown
The configuration example of the supply nozzle of liquid.
Fig. 1 (A) shows to spray the mode of hydrofluoric acid, pure water and Ozone Water from respective nozzle respectively.In this approach, hydrogen
Fluoric acid feed system 10 (being denoted as Nz1) includes：First piping 11, positioned at its front end first jet (ejiction opening) 12 and set
The valve 13 for being used to adjust hydrofluoric acid flow being placed in the first piping 11.Similarly, pure water feed system 20 (being denoted as Nz2) wraps
It includes：Second piping 21, positioned at its front end second nozzle 22 and be set in the second piping 21 for adjusting pure water flow
Valve 23.Similarly, ozone water supply system 30 (being denoted as Nz3) includes：Third piping 31, the third nozzle positioned at its front end
32 and be set in third piping 31 for adjusting the valve 33 of ozone water flow.Each nozzle 12,22,32 may be contained within chip
Supply will be added dropwise to the central part of the chip rotated from the cleaning solution of each nozzle in the top of central part.
Fig. 1 (B) shows to spray the mode of pure water and Ozone Water from common nozzle.In this approach, hydrofluoric acid feed system
10 (being denoted as Nz1) are identical with Fig. 1 (A).Pure water ozone water supply system 40 (being denoted as Nz4) includes：Pure water piping 41, ozone
Water piping 42, as they collaborate obtained from the 4th piping 43, positioned at its front end the 4th nozzle 44, be set to pure water use
In piping 41 for adjust the valve 45 of pure water flow and be set in Ozone Water piping 42 for adjusting ozone water flow
Valve 46.12 and the 4th nozzle 44 of first jet may be contained within the top in center wafer portion, by the cleaning drop from each nozzle
Add supply to the central part of the chip rotated.
Here, with reference to Fig. 2 (A), (B), in the cleaning method for illustrating the chip described in the first embodiment of the present invention
The supply sequence of cleaning solution.Fig. 2 (A) shows the supply sequence during supply nozzle using Fig. 1 (A), and Fig. 2 (B) shows to use Fig. 1
(B) supply sequence during supply nozzle.
As shown in Fig. 2 (A), (B), in present embodiment, in wafer surface, do not carry out in order only spacing
The step of supplying hydrofluoric acid (1) while (2) the step of supply hydrofluoric acid and pure water are only supplied the step of pure water (3) while supply
The step of to pure water and Ozone Water (4), is only supplied the step of Ozone Water (5).In other words, it is as follows.First, to wafer surface
The upper supply for starting hydrofluoric acid.Then, start the supply of pure water before the supply for stopping hydrofluoric acid, set in wafer surface
During supplying hydrofluoric acid and pure water simultaneously.Then, stop the supply of hydrofluoric acid.Then, it is opened before the supply for stopping pure water
The supply of beginning Ozone Water, set in wafer surface and meanwhile supply pure water and Ozone Water during.Then, stop the confession of pure water
It gives.Finally, stop the supply of Ozone Water.
It should be explained that in the case of Fig. 2 (B), make ozone water flow adjustment valve 46 by close to the time point opened with
Start there is the time lag as caused by remaining piping (that is, point at the beginning of step (4)) to the time point of ozone supply water on chip.
Similarly, make pure water flow adjustment valve 45 from open to close time point and stop on chip supply pure water time point (that is,
Point at the beginning of step (5)) there is the time lag as caused by remaining piping.
Then, with reference to Fig. 3 (A), (B), in the cleaning method for illustrating the chip described in second embodiment of the present invention
The supply sequence of cleaning solution.Fig. 3 (A) shows the supply sequence during supply nozzle using Fig. 1 (A), and Fig. 3 (B) shows to use Fig. 1
(B) supply sequence during supply nozzle.
As shown in Fig. 3 (A), (B), in present embodiment, in wafer surface, do not carry out in order only spacing
The step of supplying hydrofluoric acid (1) while the step of supply hydrofluoric acid and pure water (2) while the step of supply pure water and Ozone Water
(4), the step of being only supplied Ozone Water (5).In other words, it is as follows.First, start the supply of hydrofluoric acid in wafer surface.
Then, start the supply of pure water before the supply for stopping hydrofluoric acid, set in wafer surface while supply hydrofluoric acid and pure
During water.Then, stop the supply of hydrofluoric acid.At the same time, do not stop the supply of pure water, start the supply of Ozone Water, if
Put in wafer surface at the same supply pure water and Ozone Water during.Then, stop the supply of pure water.Finally, stop Ozone Water
Supply.
It should be explained that in the case of Fig. 3 (B), make ozone water flow adjustment valve 46 by close to the time point opened with
Start there is the time lag as caused by remaining piping (that is, point at the beginning of step (4)) to the time point of ozone supply water on chip.
Similarly, make pure water flow adjustment valve 45 from open to close time point and stop on chip supply pure water time point (that is,
Point at the beginning of step (5)) there is the time lag as caused by remaining piping.
In order to be compared with these present embodiments, with reference to Fig. 4 and Fig. 5, illustrate the cleaning in previous cleaning method
The supply sequence of liquid.
In first conventional example shown in Fig. 4, in wafer surface, do not carry out being only supplied hydrofluoric acid in order to spacing
Step (1) and the step of be only supplied Ozone Water (5).In other words, it is as follows.First, start hydrofluoric acid in wafer surface
Supply.Then, while the supply for stopping hydrofluoric acid, start the supply of Ozone Water.Finally, stop the supply of Ozone Water.It should
Conventional example is formed using the nozzle of Fig. 1 (A), and the supply of hydrofluoric acid is carried out by first jet 12, ozone is carried out by third nozzle 32
The supply of water.
In second conventional example shown in fig. 5, in wafer surface, do not carry out being only supplied hydrofluoric acid in order to spacing
Step (1), the step of being only supplied the step of pure water (3) and being only supplied Ozone Water (5).In other words, it is as follows.First, Xiang Jing
Start the supply of hydrofluoric acid on piece surface.Then, while the supply for stopping hydrofluoric acid, start the supply of pure water.Then, exist
While stopping the supply of pure water, start the supply of Ozone Water.Finally, stop the supply of Ozone Water.The conventional example uses Fig. 1
(A) nozzle is formed, and the supply of hydrofluoric acid is carried out by first jet 12, carries out the supply of pure water by second nozzle 22, and by the
Three nozzles 32 carry out the supply of Ozone Water.
Embodiment shown in Fig. 2,3 and the conventional example shown in Fig. 4,5 are compared.First conventional example shown in Fig. 4
In, also as is also shown in fig. 4, few period of the cleaning fluid volume after step (5) is only immediately started in wafer surface subtracts
It is few, partly expose naked silicon face.Therefore, the spraying for starting the Ozone Water discharged later in Following step (5) is attached to naked silicon face,
Cause selective oxidation.As a result, difference of height defect is formed in wafer surface after cleaning.Second conventional example shown in fig. 5
In, the phenomenon that similary also occurs, difference of height defect is formed in wafer surface after cleaning.
In contrast, it in Fig. 2 (A), (B) and present embodiment shown in Fig. 3 (A), (B), undergoes in each step following
Such cleaning process.First, in step (1), the oxidation film of removal wafer surface is etched by hydrofluoric acid.In step (2),
It continues through hydrofluoric acid to make a return journey the etching of oxide film dissolving, while additional pure water, thus strengthens the liquid layer of wafer surface.Fig. 2 (A),
(B) in the step (3) shown in, the hydrofluoric acid in wafer surface is excluded by pure water.Ozone Water and hydrofluoric acid are avoided as a result,
It coexists, inhibits the deterioration of the surface roughness of chip.In step (4), maintain to strengthen the liquid layer of wafer surface by pure water
State, while oxidation film is formed by Ozone Water on a surface of a wafer.In step (5), also continue to through Ozone Water in chip table
Oxidation film is formed on face.
In the sequence of Fig. 2 (A) and Fig. 3 (A), in the moment for starting step (4), the spray of Ozone Water is generated from third nozzle 32
Mist.But pure water is continuously fed with step (3) in Fig. 2 (A), pure water is continuously fed with step (2) in Fig. 3 (A),
Therefore, in the moment for starting step (4), the whole face of chip is covered by the layer of an adequate amount of pure water.Therefore, the spraying of Ozone Water is not
Naked silicon face can be attached to.As a result, it can inhibit to form the difference of height defect as caused by Ozone Water on chip.
In the sequence of Fig. 2 (B) and Fig. 3 (B), the pure water to circulate in piping 41 and the ozone to circulate in piping 42 are hydrated
Stream, therefore spray would not be generated originally since moment that the 4th nozzle 44 is ejected (step (4) moment) in Ozone Water
Mist.Moreover, because there are step (2) or step (3), therefore, in the beginning moment of step (4), the whole face of chip is by substantial amount
Pure water layer covering.Therefore, it is possible to inhibit to form the difference of height defect as caused by Ozone Water on chip.
In the present invention, it is important that in the time point for the supply for starting Ozone Water, the whole face of chip is by an adequate amount of pure water
Layer covering.Therefore, other than above-mentioned first embodiment and second embodiment or not spacing in order into
Row step (1), step (3), the sequence of step (4) and step (5).That is, in the present invention, between step (1) and step (5) into
After at least one of row step (2) and step (3), then carry out step (4).
From the viewpoint of being inhibited the deterioration of surface roughness of chip, it is preferably provided with step (3), that is, stopping hydrogen fluorine
Start the supply of Ozone Water after the supply of acid, during setting is only supplied pure water.
The concentration of the hydrofluoric acid supplied in step (1) and step (2) is suitably set according to the level of pollution of chip,
It is not particularly limited, can be 0.5 ~ 3.0 mass %.In addition, for the dense of the Ozone Water that is supplied in step (4) and step (5)
Degree is not particularly limited as long as forming oxidation film on a surface of a wafer, can be 5 ~ 20 mass ppm.It should be explained that for this
The consistency of ozone water at place, in the feelings of embodiment that pure water is mixed with Ozone Water in the 4th piping 43 of Fig. 2 (B) and Fig. 3 (B)
Under condition, refer to mixing before in piping 42 by Ozone Water concentration.
The flow of step (1) and the hydrofluoric acid in step (2) is suitably set according to the level of pollution of chip, is not had
It is particularly limited to, can be 0.5 ~ 1.5L/ minutes.In addition, the pure water flow in step (2), (3), (4) is forming sufficient liquid layer
In the range of suitably set, be not particularly limited, can be 1.0 ~ 2.0L/ minutes.In addition, for step (4) and step
(5) flow of the Ozone Water in is not particularly limited as long as forming oxidation film on a surface of a wafer, can be 1.0 ~ 2.0L/
Minute.
Wafer rotation in each step is not particularly limited, and can be 300 ~ 1000rpm.
The processing time of each step suitably sets also according to the pollution level of chip, is not particularly limited, step
(1) processing time is preferably 10 ~ 60 seconds, processing time of step (2) be preferably 5 seconds hereinafter, the processing time of step (3) it is excellent
It is selected as 10 seconds hereinafter, the processing time of step (4) is preferably 0.5 ~ 2 second, the processing time of step (5) is preferably 10 ~ 30 seconds.
Embodiment
To mirror ultrafinish treated single crystal wafers (a diameter of 300mm), various cleaning solutions is used to carry out rotary-cleaning.
In comparative example and example 1,2, for each rotary-cleaning step, the step shown in table 1 is not carried out spacing.It should be explained that
In table 1, "○" expression has carried out corresponding cleaning step, and "×" expression does not carry out corresponding cleaning step.
[table 1]
。
The condition of each cleaning step is as follows.In addition, the wafer rotation in each cleaning step is 500rpm.
Hydrofluoric acid clean step (HF)
Hydrofluoric acid concentration：1.0 mass %
Flow：0.8L/ minutes
Processing time：10 seconds
Hydrofluoric acid pure water cleaning step (HF/DIW)
Hydrofluoric acid concentration：1.0 mass %
Hydrofluoric acid flow：0.8L/ minutes
Pure water flow：1.2L/ minute
Processing time：3 seconds
Pure water cleaning step (DIW)
Pure water flow：1.2L/ minute
Processing time：10 seconds
Pure water Ozone Water cleaning step (DIW/O3W)
Consistency of ozone water：15 mass ppm
Pure water flow：1.2L/ minute
Ozone water flow：1.2L/ minute
Processing time：1 second
Ozone Water cleaning step (O3W)
Consistency of ozone water：15 mass ppm
Flow：1.2L/ minute
Processing time：20 seconds.
Under each level, 6 wafers are cleaned according to above-mentioned steps, make its rotary drying.Thereafter, to each chip, as
Final cleaning, carries out the monolithic rotary-cleaning of conventional method, makes its rotary drying thereafter.Thereafter, pass through laser particle count instrument
(KLA-Tencor corporations, SP-3) measures the surface of each chip under DCO patterns, is obtained the LPD's that size is more than 26nm
Quantity.Average LPD number summary under each level is shown in table 1.
Can be clear and definite by table 1, compared with comparative example, in example 1,2, it can reduce by LPD number.In addition, in comparative example,
When being detected as the position of LPD by atomic force microscope (AFM) observation, observe that a large amount of difference of height as shown in Figure 6 lacks
It falls into (the substantially dome columnar defects of 3 ~ 12 μm of diameter, 0.05 ~ 0.24nm of height).In contrast, in example 1,2, lead to
AFM observations are crossed when being detected as all sites of LPD, do not observe such difference of height defect.
Industrial applicibility
The cleaning method of chip according to the present invention can inhibit to form the difference of height defect as caused by Ozone Water on chip.
Reference sign
10 hydrofluoric acid feed systems
11 first pipings
12 first jets
13 hydrofluoric acid flow adjustment valves
20 pure water feed systems
21 second pipings
22 second nozzles
23 pure water flow adjustment valves
30 ozone water supply systems
31 third pipings
32 third nozzles
33 ozone water flow adjustment valves
40 pure water ozone water supply systems
41 pure water pipings
42 Ozone Water pipings
43 the 4th pipings
44 the 4th nozzles
45 pure water flow adjustment valves
46 ozone water flow adjustment valves.
Claims (5)
1. the cleaning method of chip is the chip for supplying cleaning solution on the surface of the chip while afer rotates are made
Cleaning method, which is characterized in that
In the wafer surface, start the supply of hydrofluoric acid,
Before the supply for stopping the hydrofluoric acid or while stopping, starting the supply of pure water,
After the supply for stopping the hydrofluoric acid and before stopping the supply of the pure water, start the supply of Ozone Water, set
During pure water and Ozone Water being supplied in the wafer surface simultaneously,
Thereafter stop the supply of the pure water, Ozone Water is only supplied in the wafer surface.
2. the cleaning method of chip according to claim 1, wherein, in the wafer surface, stopping the hydrogen fluorine
Start the supply of the pure water before the supply of acid, during setting supplies hydrofluoric acid and pure water simultaneously.
3. the cleaning method of chip according to claim 2, wherein, in the wafer surface, stopping the hydrogen fluorine
Start the supply of the Ozone Water after the supply of acid, during setting is only supplied pure water.
4. the cleaning method of the chip according to any one of claim 1 ~ 3, wherein, spray the hydrogen fluorine from first jet
Acid sprays the pure water and the Ozone Water from the common nozzle different from the first jet.
5. the cleaning method of the chip according to any one of claim 1 ~ 3, wherein, respectively institute is sprayed from respective nozzle
State hydrofluoric acid, the pure water and the Ozone Water.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016253936A JP2018107338A (en) | 2016-12-27 | 2016-12-27 | Cleaning method of wafer |
| JP2016-253936 | 2016-12-27 |
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|---|---|
| CN108242389A true CN108242389A (en) | 2018-07-03 |
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| CN201711445707.3A Pending CN108242389A (en) | 2016-12-27 | 2017-12-27 | The cleaning method of chip |
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| CN (1) | CN108242389A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6996438B2 (en) * | 2018-07-11 | 2022-01-17 | 株式会社Sumco | A method for cleaning a semiconductor wafer and a method for manufacturing a semiconductor wafer using the cleaning method. |
| JP6996488B2 (en) * | 2018-12-26 | 2022-01-17 | 株式会社Sumco | A method for batch-type cleaning of silicon wafers, a method for manufacturing silicon wafers using the cleaning method, and a method for determining cleaning conditions for silicon wafers. |
| JP2021152762A (en) * | 2020-03-24 | 2021-09-30 | 株式会社Ｓｃｒｅｅｎホールディングス | Learned-model generating method, learned model, abnormality-factor estimating apparatus, substrate treating installation, abnormality-factor estimating method, learning method, learning apparatus, and learning-data preparing method |
| CN114899086B (en) * | 2022-05-15 | 2023-03-24 | 上海申和投资有限公司 | Of a semiconductor wafer method for cleaning contaminated impurities |
| CN117423644B (en) * | 2023-12-18 | 2024-03-05 | 北京青禾晶元半导体科技有限责任公司 | Wafer cleaning method |
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| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
| TW201545229A (en) * | 2014-05-15 | 2015-12-01 | Shinetsu Handotai Kk | Wafer cleaning method |
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| JP4236109B2 (en) * | 2003-03-31 | 2009-03-11 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| KR101232249B1 (en) * | 2004-08-10 | 2013-02-12 | 간또 가가꾸 가부시끼가이샤 | Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process |
| CN102810459B (en) * | 2011-06-03 | 2015-04-08 | 中国科学院微电子研究所 | Method for cleaning wafer after chemical mechanical planarization |
| WO2013140955A1 (en) * | 2012-03-23 | 2013-09-26 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and heater cleaning method |
| JP6493095B2 (en) * | 2014-09-18 | 2019-04-03 | セントラル硝子株式会社 | Wafer cleaning method and chemical solution used for the cleaning method |
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| JPH04287922A (en) * | 1991-01-22 | 1992-10-13 | Dainippon Screen Mfg Co Ltd | Rotation-system surface treatment method and rotation-system surface treatment device for application of said method |
| JP2000037671A (en) * | 1998-07-24 | 2000-02-08 | Mitsubishi Electric Corp | Method of and apparatus for treating surface of substrate |
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| US20040187896A1 (en) * | 2003-03-31 | 2004-09-30 | Nobuo Konishi | Substrate processing method and apparatus |
| JP2007235032A (en) * | 2006-03-03 | 2007-09-13 | Dainippon Screen Mfg Co Ltd | Substrate processing device |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
| TW201545229A (en) * | 2014-05-15 | 2015-12-01 | Shinetsu Handotai Kk | Wafer cleaning method |
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| JP2018107338A (en) | 2018-07-05 |
| TW201831992A (en) | 2018-09-01 |
| TWI657309B (en) | 2019-04-21 |
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