CN108232032A - Organic light-emitting display device, organic electroluminescence device and preparation method thereof - Google Patents
Organic light-emitting display device, organic electroluminescence device and preparation method thereof Download PDFInfo
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- CN108232032A CN108232032A CN201810010052.5A CN201810010052A CN108232032A CN 108232032 A CN108232032 A CN 108232032A CN 201810010052 A CN201810010052 A CN 201810010052A CN 108232032 A CN108232032 A CN 108232032A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
The present invention relates to a kind of organic light-emitting display device, organic electroluminescence device and preparation method thereof, the organic electroluminescence device includes：Conductive reflective, the conductive reflective include the aluminum membranous layer, silver film and the tin indium oxide film layer that stack gradually；Organic luminous layer, the organic luminous layer are formed in the tin indium oxide film layer；Cathode layer, the cathode layer are formed on the organic luminous layer.Tin indium oxide film layer positioned at the upper strata of conductive reflective can prevent silver film large area is exposed to aoxidize in air, aluminum membranous layer has higher reflectivity, the reflectivity of conductive reflective can be improved, effectively improve the reflectivity of organic luminescent device, and effectively reduce the power consumption of device, aluminum membranous layer has higher conductivity, and aluminum membranous layer can improve film layer adhesion strength as underlying film layer, can preferably be connect with the planarization layer of lower floor.
Description
Technical field
The present invention relates to organic light emitting display manufacturing technology field, more particularly to organic light-emitting display device, Organic Electricity
Electroluminescence device and preparation method thereof.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display screen has self-luminous, surpasses
The advantages that frivolous, fast response time, visual angle wide, low in energy consumption, it is considered to be most potential display device.AMOLED
(Active-matrix organic light emitting diode, active matrix organic electroluminescence device) can be abundant
Performance OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) is simple for process, luminous efficiency is high, light
Many advantages, such as thin, rich in color and visual angle is wide both can should have in terms of large-sized monitor, can also be micro- aobvious
It elicits latent faculties in terms of showing device.
The conducting reflective film layer (anode) of organic luminescent device in traditional AMOLED uses ITO (tin indium oxide)/Ag
The laminated construction of (silver)/ITO (tin indium oxide), conducting reflective film layer etching are carried out by the way of wet etching, used
The mixed solution system of HNO3/CH3COOH/H2O/H3PO4, the ito film layer and Ag film layers being corroded are same in solution environmental
Shi Fasheng is chemically reacted, but the solution is high to the etching selection ratio of ito film layer and Ag film layers, and about 1:1000, and since technique needs
Ask lower floor's ito film layer that need to extend etch period without etching residue, lead to Ag film layers etch amount much larger than ito film layer etch amount, Ag
Film layer retreats serious.Ag film layers in an intermediate position can retreat in overlapping film layer, the upper strata ITO of the substrate portion that is etched position
Film layer can lose support and collapse, and play the role of package to the side wall of Ag film layers, influence further work of the solution to Ag film layers
With, and portion upper strata ITO, without collapsing, Ag film layers are exposed and are further corroded, so leading to the Ag of substrate different location
The etch amount of film layer is inhomogenous, figure line width lack of homogeneity after etching, and as a result macro manifestations are uneven for light emission luminance, influence to have
The display effect of machine luminescent device.
Invention content
Based on this, it is necessary to provide a kind of organic light-emitting display device, organic electroluminescence device and preparation method thereof.
A kind of organic electroluminescence device, including：
Conductive reflective, the conductive reflective include the aluminum membranous layer, silver film and the tin indium oxide film layer that stack gradually；
Organic luminous layer, the organic luminous layer are formed in the tin indium oxide film layer；
Cathode layer, the cathode layer are formed on the organic luminous layer.
The thickness of the aluminum membranous layer is 80~120nm in one of the embodiments,.
The thickness of the silver film is 5~15nm in one of the embodiments,.
The thickness of the tin indium oxide film layer is 5~15nm in one of the embodiments,.
A kind of preparation method of organic electroluminescence device, including：
Conductive reflective is prepared, the conductive reflective includes the aluminum membranous layer, silver film and the indium oxide tin film that stack gradually
Layer；
Organic luminous layer is formed in the tin indium oxide film layer；
Cathode layer is formed on the organic luminous layer.
The preparation conductive reflective in one of the embodiments, the conductive reflective include the aluminium stacked gradually
Film layer, silver film and tin indium oxide film layer step include：
It is sequentially depositing the aluminum membranous layer to form stacking, the silver film and the tin indium oxide film layer；
The tin indium oxide film layer, the silver film and the aluminum membranous layer are carved successively using dry etch process
Erosion.
It is described in one of the embodiments, to use dry etch process successively to the tin indium oxide film layer, the silver
The step of film layer and the aluminum membranous layer perform etching includes：
Dry etching is carried out to the tin indium oxide film layer and the silver film using methane gas successively.
It is described in one of the embodiments, to use dry etch process successively to the tin indium oxide film layer, the silver
The step of film layer and the aluminum membranous layer perform etching includes：
The aluminum membranous layer is performed etching using the gas containing chlorine.
The step of gas of the use containing chlorine performs etching the aluminum membranous layer in one of the embodiments, it
After further include：
The silver chlorate generated in chlorine etching process is reacted into line replacement using carbon tetrafluoride gas.
A kind of organic light-emitting display device, including the organic electroluminescence device described in any of the above-described embodiment.
Above-mentioned organic light-emitting display device, organic electroluminescence device and preparation method thereof, positioned at the upper of conductive reflective
The tin indium oxide film layer of layer can prevent silver film large area is exposed to aoxidize in air, and aluminum membranous layer has higher reflection
Rate can improve the reflectivity of conductive reflective, effectively improve the reflectivity of organic luminescent device, and effectively reduce the work(of device
Consumption, aluminum membranous layer has higher conductivity, and aluminum membranous layer can improve film layer adhesion strength as underlying film layer, can be preferably under
The planarization layer connection of layer.
Description of the drawings
Fig. 1 is the part section structural representation of the organic electroluminescence device of one embodiment；
Fig. 2 is the flow diagram of the preparation method of the organic light-emitting display device of one embodiment；
Fig. 3 is the part section structural representation of the organic light-emitting display device of one embodiment.
Specific embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In attached drawing
Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose of providing these embodiments is that make to understand more the disclosure
Add thorough and comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood meaning of technical staff is identical.Term used herein is intended merely to the mesh of description specific embodiment
, it is not intended that in the limitation present invention.Term as used herein " and/or " including one or more relevant Listed Items
Arbitrary and all combination.
For example, a kind of organic electroluminescence device, including：Conductive reflective, the conductive reflective include stacking gradually
Aluminum membranous layer, silver film and tin indium oxide film layer；Organic luminous layer, the organic luminous layer are formed in the tin indium oxide film layer
On；Cathode layer, the cathode layer are formed on the organic luminous layer.
In the present embodiment, the tin indium oxide film layer positioned at the upper strata of conductive reflective can prevent silver film large area exposed
It aoxidizes in air, aluminum membranous layer has higher reflectivity, can improve the reflectivity of conductive reflective, effectively improve organic
The reflectivity of luminescent device, and the power consumption of device is effectively reduced, aluminum membranous layer has higher conductivity, and aluminum membranous layer is as lower floor
Film layer can improve film layer adhesion strength, can preferably be connect with the planarization layer of lower floor.
In one embodiment, as shown in Figure 1, providing a kind of organic electroluminescence device 10, including：Conductive reflective
100, the conductive reflective 100 includes the aluminum membranous layer 110, silver film 120 and the tin indium oxide film layer 130 that stack gradually；It is organic
Luminescent layer 200, the organic luminous layer 200 are formed in the tin indium oxide film layer 130；Cathode layer 300, the cathode layer
300 are formed on the organic luminous layer 200.
Specifically, which is anode layer, i.e. the conductive reflective 100 is used as organic electroluminescence device
10 anode, for example, the conductive reflective 100 is formed on planarization layer 400, for example, aluminium (Al) film layer, silver (Ag) film layer and
Tin indium oxide (ITO) film layer, which stacks gradually, to be formed on planarization layer 400.For example, the silver film 120 includes silver alloy film layer,
For example, being doped with other metal materials in silver film 120, for example, being doped with metallic zinc, therefore, which can also
Referred to as silver alloy film layer.For example, the aluminum membranous layer 110 includes aluminium alloy film layer, for example, being doped with other gold in aluminum membranous layer 110
Belong to material, for example, being doped with metallic zinc, therefore, which is referred to as aluminium alloy film layer.
The tin indium oxide film layer on upper strata can play a protective role to silver film, prevent silver film large area exposed in air
In and aoxidize, the tin indium oxide film layer be transparent film layer, the tin indium oxide film layer be used for transmitted ray, the tin indium oxide film layer
Light transmittance is 90% or so.Silver film is as the first reflective coating, and aluminum membranous layer is as the second reflective coating.Specifically, You Jifa
The light sent out of photosphere is transmitted through by tin indium oxide film layer on silver film and aluminum membranous layer, anti-on silver film and aluminum membranous layer
It penetrates, again passes by tin indium oxide film layer and reflex on the outside of cathode layer.Aluminum membranous layer has higher reflectivity, can improve conductive anti-
The reflectivity of layer is penetrated, effectively improves the reflectivity of organic luminescent device, and effectively reduces the power consumption of device, aluminum membranous layer has higher
Conductivity, in addition, aluminum membranous layer and the planarization layer degree of adhesion of lower floor are higher, compared to silver film and planarization layer degree of adhesion more
Height, aluminum membranous layer can be effectively increased the adhesion strength improved between conductive reflective and planarization layer.
For example, the organic luminous layer is formed on the light-emitting zone of conductive reflective.It is noted that the Organic Electricity
Other functional layers, such as planarization layer, passivation layer and protective layer are further included in electroluminescence device, organic luminous layer includes hole
Layer, electron transfer layer etc., for example, organic electroluminescence device includes the first organic insulator, is formed in the first organic insulator
On planarization layer, the conductive reflective being formed on planarization layer, on the outside of the light-emitting zone that is formed in conductive reflective
Second organic insulator, is formed on organic luminous layer the organic luminous layer being formed in the light-emitting zone in conductive reflective
Cathode layer and the protective layer that is formed on cathode layer.Above-mentioned functional layer is not described to the greatest extent in the present embodiment, can be used
Structure of the prior art is realized.Those skilled in the art should understand that the organic electroluminescence device in above-described embodiment wraps
Include above-mentioned functional layer.
In order to enable the reflecting properties of conductive reflective are more preferably, and cause conductive reflective surface resistance and traditional oxidation
The surface resistance performance of indium tin layer/silver layer/indium tin oxide layer structure is suitable, wherein, surface resistance represents the resistance of unit area film layer
Value, in one embodiment, the thickness of the aluminum membranous layer is 80~120nm, for example, the thickness of the silver film is 5~15nm,
For example, the thickness of the tin indium oxide film layer is 5~15nm.In the present embodiment, since the thickness of aluminum membranous layer is larger, and silver film
It is smaller with the thickness of tin indium oxide film layer so that the surface resistance of aluminum membranous layer is approached with silver film and tin indium oxide film layer, in addition, by
It is smaller in the thickness of silver film, be conducive to the reflectivity that light improves low wavelength light through silver film, so as to improve organic hair
The emissivity of optical device, and effectively reduce the power consumption of device.In addition, in the present embodiment, the surface resistance characteristic of conductive reflective with
The conductive reflective of the structure of conventional oxidation indium tin layer/silver layer/indium tin oxide layer is suitable so that the performance of conductive reflective compared with
It is good.
In order to further improve the reflectivity of organic electroluminescence device, for example, the thickness of the aluminum membranous layer is 100nm,
The thickness of the silver film is 10nm, and the thickness of the tin indium oxide film layer is 10nm, in the present embodiment, tin indium oxide film layer
Thickness is 10nm, can be good at transmitted ray, and the thickness of silver film is 10nm, can improve transmissivity, and causes light
Line improves the reflectivity of low wavelength light through silver film, so as to improve the emissivity of organic luminescent device, effectively reduces device
Power consumption, and cause conductive reflective in each film layer surface resistance it is close so that the electric conductivity of conductive reflective is more preferably.
In the present embodiment, the surface resistance characteristic of conductive reflective further levels off to conventional oxidation indium tin layer/silver layer/indium tin oxide layer
The conductive reflective of structure is suitable so that the performance of conductive reflective is preferable.
In one embodiment, as shown in Fig. 2, providing a kind of preparation method of organic electroluminescence device, including：
Step 202, conductive reflective is prepared, the conductive reflective includes the aluminum membranous layer, silver film and the oxygen that stack gradually
Change indium tin film layer.
For example, aluminum membranous layer, silver film and tin indium oxide film layer are sequentially prepared in array substrate, for example, in planarization layer
On be sequentially prepared aluminum membranous layer, silver film and tin indium oxide film layer.
For example, aluminum membranous layer, silver film and tin indium oxide film layer are sequentially formed using depositing operation, for example, in planarization layer
On be sequentially depositing to form aluminum membranous layer, silver film and tin indium oxide film layer.
The tin indium oxide film layer on upper strata can play a protective role to silver film, prevent silver film large area exposed in air
In and aoxidize, the tin indium oxide film layer be transparent film layer, the tin indium oxide film layer be used for transmitted ray, the tin indium oxide film layer
Light transmittance is 90% or so.Silver film is as the first reflective coating, and aluminum membranous layer is as the second reflective coating.Specifically, You Jifa
The light sent out of photosphere is transmitted through by tin indium oxide film layer on silver film and aluminum membranous layer, anti-on silver film and aluminum membranous layer
It penetrates, again passes by tin indium oxide film layer and reflex on the outside of cathode layer.Aluminum membranous layer has higher reflectivity, can improve conductive anti-
The reflectivity of layer is penetrated, effectively improves the reflectivity of organic luminescent device, and effectively reduces the power consumption of device, aluminum membranous layer has higher
Conductivity, in addition, aluminum membranous layer and the planarization layer degree of adhesion of lower floor are higher, compared to silver film and planarization layer degree of adhesion more
Height, aluminum membranous layer can be effectively increased the adhesion strength improved between conductive reflective and planarization layer.
Step 204, organic luminous layer is formed in the tin indium oxide film layer.
For example, the light-emitting zone in the tin indium oxide film layer forms organic luminous layer.It is noted that this is organic
Electroluminescent device includes light-emitting zone, which is used for luminescence display.
Step 206, cathode layer is formed on the organic luminous layer.
In above-described embodiment, the tin indium oxide film layer on upper strata can prevent the exposed oxygen in air of silver film large area
Change, aluminum membranous layer has higher reflectivity, can improve the reflectivity of conductive reflective, effectively improve the anti-of organic luminescent device
Rate is penetrated, and effectively reduces the power consumption of device, aluminum membranous layer has higher conductivity, and aluminum membranous layer can improve film as underlying film layer
Layer adhesion can preferably be connect with the planarization layer of lower floor.
In order to during each film layer of conductive reflective is prepared, each film layer be etched required pattern, in one embodiment
In, the preparation conductive reflective, the conductive reflective includes the aluminum membranous layer, silver film and the tin indium oxide film layer that stack gradually
Step includes：It is sequentially depositing the aluminum membranous layer to form stacking, the silver film and the tin indium oxide film layer；It is carved using dry method
Etching technique successively performs etching the tin indium oxide film layer, the silver film and the aluminum membranous layer.
For example, be sequentially depositing to form the aluminum membranous layer, the silver film and the tin indium oxide film layer on planarization layer,
For example, dry etching is carried out to the tin indium oxide film layer, the silver film and the aluminum membranous layer.For example, by mask plate to institute
It states tin indium oxide film layer, the silver film and the aluminum membranous layer and carries out dry etching.
For example, organic electroluminescence device is placed into vacuum chamber, etching gas is implanted sequentially in vacuum chamber,
Tin indium oxide film layer, silver layer and aluminum membranous layer are performed etching successively successively, so as to fulfill the quarter of each film layer to conductive reflective
Erosion.For example, the gas being implanted sequentially is methane and chlorine, for example, organic electroluminescence device is placed into vacuum chamber,
Methane and chlorine are implanted sequentially in vacuum chamber, tin indium oxide film layer, silver layer and aluminum membranous layer are performed etching successively successively, so as to
Realize the etching to each film layer of conductive reflective.
In the present embodiment, tin indium oxide film layer, silver film and aluminum membranous layer are performed etching by dry etching, on the one hand,
Dry etching can effective monitoring etching terminal, can accurately control the etch amount to each film layer, on the other hand, to indium oxide tin film
The etching phase of layer and silver film is more uniformly distributed compared with wet etching, that is to say, that dry etching is to tin indium oxide film layer and silverskin
The uniformity of the etching of layer is more preferable, the phenomenon that effectively eliminating MURA (brightness irregularities) generated in wet etching.In each embodiment,
Dry etching is dry etching.
For example, in tin indium oxide film layer, silver film and aluminum membranous layer dry etching process, EPD (End Point are used
Detector, endpoint detector) dry etching process is monitored.It is anti-in the plasma that the EPD generates dry etching reaction
The wavelength answered object or produce object transmitting is monitored, and the number of substance is judged according to its luminous intensity, is so as to judge to react
No completion, you can control the terminal of its etching reaction.
In order to enable to the etching effect of the tin indium oxide film layer and the silver film more preferably, in one embodiment,
The step performed etching successively to the tin indium oxide film layer, the silver film and the aluminum membranous layer using dry etch process
Suddenly include：Dry etching is carried out to the tin indium oxide film layer and the silver film using methane gas successively.
In the present embodiment, using methane (CH4) dry etching is carried out to tin indium oxide film layer and silver film, methane is to indium oxide
Tin film layer and the etching selection ratio of silver film are low, and etching selection ratio refers to the ratio of the etch rate of different film layers to two kinds,
In the present embodiment, methane is relatively low to the ratio of tin indium oxide film layer and silver film etch rate, that is to say, that methane is to indium oxide
Tin film layer and silver film etch rate are close, in this way, can cause the uniformity of indium oxide tin film layer and silver film more preferably, this
Outside, be conducive to the control to the etching degree of the two so that etching terminal is controllable, so that etching effect is more preferably.
In order to enable to the etching effect of aluminum membranous layer more preferably, in one embodiment, it is described using dry etch process according to
Secondary the step of being performed etching to the tin indium oxide film layer, the silver film and the aluminum membranous layer, includes：Using containing chlorine
Gas performs etching the aluminum membranous layer.
Specifically, chlorine (Cl2) chemical attack can be carried out to aluminum membranous layer, so as to fulfill the etching to aluminum membranous layer.For example,
The gas for containing chlorine also contains boron chloride (BCl3), for example, using the mixed gas of chlorine and boron chloride to described
Aluminum membranous layer carries out dry etching.In mixed gas, chlorine carries out chemical etching to aluminum membranous layer, and boron chloride is in the electricity of dry etching chamber
Plasma is generated under the action of pole, plasma plays physical bombardment to aluminum membranous layer under electric field action, realizes to aluminium film
The dry etching of layer, so that the etching effect of aluminum membranous layer is more preferably.On the other hand, silver film, will after the etching by methane
Deposit is generated, in the present embodiment, aluminum membranous layer is performed etching in etching cavity by chlorine, while also etching cavity is risen
To cleaning action, the deposit in etching cavity is effectively removed, reduces the cleaning frequency of chamber.
It is noted that during being performed etching using chlorine to aluminum membranous layer, chlorine simultaneously also carries out silver film
Corrosion, in one embodiment, after the step of gas of the use containing chlorine performs etching the aluminum membranous layer also
Including：The silver chlorate generated in chlorine etching process is reacted into line replacement using carbon tetrafluoride gas.
Specifically, during chlorine is to performing etching aluminum membranous layer, chlorine corrosion silver film generates silver chlorate
(AgCl), in the present embodiment, using carbon tetrafluoride gas and corrosion product chlorination silver reaction, silver chlorate is replaced into silver fluoride
(AgF), prevent silver film from further being corroded.
In one embodiment, it is described that the silver chlorate generated in chlorine etching process is put using carbon tetrafluoride gas
It is further included after the step of changing reaction：The conductive reflective is cleaned.
For example, after the completion of to tin indium oxide film layer, silver film and aluminum membranous layer dry etching, demoulding is masked, to oxidation
Indium tin film layer, silver film and aluminum membranous layer are cleaned, for example, by clear water to tin indium oxide film layer, silver film and aluminum membranous layer into
Row cleaning, in this way, by clear water by silver fluoride so that conductive reflective surface cleaning.
In one embodiment, it is further included after described the step of being cleaned to the conductive reflective：It is led to described
Galvanic reflex layer carries out drying and processing.By drying, moisture remaining after the cleaning in each film layer of conductive reflective is dried, is prevented
Only the oxygen in the moisture dissolved air of each film surface of conductive reflective and element sulphur cause each film to conductive reflective
The corrosion of layer.
In order to enable the reflecting properties of conductive reflective are more preferably, and cause conductive reflective surface resistance and traditional oxidation
The surface resistance performance of indium tin layer/silver layer/indium tin oxide layer structure is suitable, and in one embodiment, the thickness of the aluminum membranous layer is
80~120nm, for example, the thickness of the silver film is 5~15nm, for example, the thickness of the tin indium oxide film layer for 5~
15nm.In the present embodiment, since the thickness of aluminum membranous layer is larger, and silver film and the thickness of tin indium oxide film layer are smaller so that aluminium
The surface resistance of film layer is approached with silver film and tin indium oxide film layer, further, since the thickness of silver film is smaller, it is saturating to be conducive to light
The reflectivity that silver film improves low wavelength light is crossed, so as to improve the emissivity of organic luminescent device, and effectively reduces device
Power consumption.In addition, in the present embodiment, surface resistance characteristic and the conventional oxidation indium tin layer/silver layer/indium tin oxide layer of conductive reflective
The conductive reflective of structure is suitable so that the performance of conductive reflective is preferable.
In order to further improve the reflectivity of organic electroluminescence device, for example, the thickness of the aluminum membranous layer is 100nm,
The thickness of the silver film is 10nm, and the thickness of the tin indium oxide film layer is 10nm, in the present embodiment, tin indium oxide film layer
Thickness is 10nm, can be good at transmitted ray, and the thickness of silver film is 10nm, can improve transmissivity, and causes light
Line improves the reflectivity of low wavelength light through silver film, so as to improve the emissivity of organic luminescent device, effectively reduces device
Power consumption, and cause conductive reflective in each film layer surface resistance it is close so that the electric conductivity of conductive reflective is more preferably.
In the present embodiment, the surface resistance characteristic of conductive reflective further levels off to conventional oxidation indium tin layer/silver layer/indium tin oxide layer
The conductive reflective of structure is suitable so that the performance of conductive reflective is preferable.Further, since the thickness of silver film is smaller, use
The deposit that methane performs etching silver film generation is less, convenient for the cleaning of deposit, is conducive to keep etch chamber indoor
Cleaning.
In one embodiment, a kind of organic light-emitting display device is provided, including described in any of the above-described embodiment
Organic electroluminescence device.
For example, the organic light-emitting display device includes array substrate, specifically, which includes substrate, for example, should
Substrate is glass substrate, and for another example, which is flexible base board.For example, the substrate is with LTPS (Low Temperature
Poly-silicon, low temperature polycrystalline silicon) substrate, as shown in figure 3, the array substrate further includes the circuit being formed on substrate
Layer, for example, the organic light-emitting display device 30 includes substrate 600, the active layer 610 being formed on substrate 600 and is formed in
Thin film transistor (TFT) 700 on active layer 610, the thin film transistor (TFT) 700 include the gate insulating layer being formed on active layer 610
710th, the grid 720 being formed on gate insulating layer 710, the interlayer insulating film 730 being formed on grid 720, the layer insulation
Through-hole 731 is offered on layer 730, source/drain 740 is formed in the through-hole 731.In through-hole 731 in Fig. 3 can be source
Pole or drain electrode 740.The source/drain 740 is connect with the conductive reflective 100 of organic electroluminescence device, that is,
It says, source electrode connect or drains with anode 740 to be connect with anode.For example, source/drain 740 is connect with aluminum membranous layer 110.
The circuit layer is used to implement circuit logic, powers for organic electroluminescence device, which is used to control
It is formed with the work of organic electroluminescence devices.For example, the organic light-emitting display device includes array substrate 600 and is formed in array
Organic electroluminescence device on substrate 600, the first organic insulator of the organic electroluminescence device are formed in film crystal
On pipe 700, first organic insulator 510 and planarization layer 400 offer via 511, and conductive reflective 100 passes through via
511 connect with the source/drain 740 of thin film transistor (TFT) 700.
As shown in figure 3, organic electroluminescence device 10 includes the first organic insulator being formed on thin film transistor (TFT)
510th, the planarization layer 400 being formed on the first insulating layer, the aluminum membranous layer 110, the silver film that are sequentially formed on planarization layer 400
120 and tin indium oxide film layer 130；The organic luminous layer 200 being formed in the light-emitting zone in the tin indium oxide film layer 130,
The second organic insulator 520 being formed in outside the light-emitting zone in the tin indium oxide film layer 130, is formed in the organic light emission
Cathode layer 300 on layer 200.Wherein, other functional layers in the organic electroluminescence device 10 are omitted in Fig. 3.
In above-described embodiment, the tin indium oxide film layer positioned at the upper strata of conductive reflective can prevent silver film large area naked
Dew aoxidizes in air, and aluminum membranous layer has higher reflectivity, can improve the reflectivity of conductive reflective, effectively improve
The reflectivity of machine luminescent device, and the power consumption of device is effectively reduced, aluminum membranous layer has higher conductivity, and under aluminum membranous layer is used as
Tunic layer can improve film layer adhesion strength, can preferably be connect with the planarization layer of lower floor.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come
It says, without departing from the inventive concept of the premise, multiple modification and improvement can also be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of organic electroluminescence device, which is characterized in that including：
Conductive reflective, the conductive reflective include the aluminum membranous layer, silver film and the tin indium oxide film layer that stack gradually；
Organic luminous layer, the organic luminous layer are formed in the tin indium oxide film layer；
Cathode layer, the cathode layer are formed on the organic luminous layer.
2. organic electroluminescence device according to claim 1, which is characterized in that the thickness of the aluminum membranous layer for 80~
120nm。
3. organic electroluminescence device according to claim 1, which is characterized in that the thickness of the silver film for 5~
15nm。
4. organic electroluminescence device according to claim 1, which is characterized in that the thickness of the tin indium oxide film layer is
5~15nm.
5. a kind of preparation method of organic electroluminescence device, which is characterized in that including：
Conductive reflective is prepared, the conductive reflective includes the aluminum membranous layer, silver film and the tin indium oxide film layer that stack gradually；
Organic luminous layer is formed in the tin indium oxide film layer；
Cathode layer is formed on the organic luminous layer.
6. the preparation method of organic electroluminescence device according to claim 5, which is characterized in that described to prepare conduction instead
Layer is penetrated, aluminum membranous layer, silver film and the tin indium oxide film layer step that the conductive reflective includes stacking gradually include：
It is sequentially depositing the aluminum membranous layer to form stacking, the silver film and the tin indium oxide film layer；
The tin indium oxide film layer, the silver film and the aluminum membranous layer are performed etching successively using dry etch process.
7. the preparation method of organic electroluminescence device according to claim 6, which is characterized in that described to be carved using dry method
The step of etching technique successively performs etching the tin indium oxide film layer, the silver film and the aluminum membranous layer includes：
Dry etching is carried out to the tin indium oxide film layer and the silver film using methane gas successively.
8. the preparation method of organic electroluminescence device according to claim 6, which is characterized in that described to be carved using dry method
The step of etching technique successively performs etching the tin indium oxide film layer, the silver film and the aluminum membranous layer includes：
The aluminum membranous layer is performed etching using the gas containing chlorine.
9. the preparation method of organic electroluminescence device according to claim 8, which is characterized in that the use contains chlorine
It is further included after the step of gas of gas performs etching the aluminum membranous layer：
The silver chlorate generated in chlorine etching process is reacted into line replacement using carbon tetrafluoride gas.
10. a kind of organic light-emitting display device, which is characterized in that including the organic electroluminescence described in any one of Claims 1-4
Luminescent device.
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| CN101188887A (en) * | 2006-11-14 | 2008-05-28 | 株式会社日立显示器 | Organic EL display device |
| JP2010092665A (en) * | 2008-10-06 | 2010-04-22 | Toshiba Mobile Display Co Ltd | Organic electroluminescent display |
| US20110215330A1 (en) * | 2005-11-02 | 2011-09-08 | Hyun-Eok Shin | Organic light-emitting display device and method of fabricating the same |
| CN105118924A (en) * | 2015-07-29 | 2015-12-02 | 苏州大学 | Short-circuit-preventing top-emission OLED device and manufacturing method thereof |
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| US20110215330A1 (en) * | 2005-11-02 | 2011-09-08 | Hyun-Eok Shin | Organic light-emitting display device and method of fabricating the same |
| CN101188887A (en) * | 2006-11-14 | 2008-05-28 | 株式会社日立显示器 | Organic EL display device |
| JP2010092665A (en) * | 2008-10-06 | 2010-04-22 | Toshiba Mobile Display Co Ltd | Organic electroluminescent display |
| CN105118924A (en) * | 2015-07-29 | 2015-12-02 | 苏州大学 | Short-circuit-preventing top-emission OLED device and manufacturing method thereof |
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