CN101379885B - Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method - Google Patents
Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method Download PDFInfo
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- CN101379885B CN101379885B CN200780004252XA CN200780004252A CN101379885B CN 101379885 B CN101379885 B CN 101379885B CN 200780004252X A CN200780004252X A CN 200780004252XA CN 200780004252 A CN200780004252 A CN 200780004252A CN 101379885 B CN101379885 B CN 101379885B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
Abstract
The present invention relates to a method for preparing an organic light emitting device, and an organic light emitting device prepared by the method. The method for preparing the organic light emitting device comprises a step of sequentially forming a first electrode made of metal, one layer or a plurality of layers of organic material layers comprising a light emitting layer, and a second electrode on the substrate; the method also comprises a step of forming a layer with a metal with oxidation rate higher than that of the first electrode in the first electrode before the organic material layer is formed.
Description
Technical field
The present invention relates to a kind of organic luminescent device for preparing the organic light-emitting device method and prepare by this method.Particularly, the present invention relates to a kind of organic luminescent device for preparing the organic light-emitting device method and prepare by this method, described method can reduce or remove the native oxide layer on the electrode surface that is formed by metal in the organic light-emitting device preparation process, to improve electronics or hole injection efficiency and luminosity and life characteristic.
The application require the korean patent application No.10-2006-0010722 that submits in Korea S Department of Intellectual Property on February 3rd, 2006 and on March 15th, 2006 at the U.S. Provisional Patent Application No.60 of United States Patent (USP) with trademark office's submission, 782,288 benefit of priority, its full content all is incorporated herein by reference at this.
Background technology
Usually, term organic light emission phenomenon is meant the phenomenon that electric energy is changed into luminous energy by organic material.Utilize the organic luminescent device (OLED) of organic light emission phenomenon to have the structure that comprises anode, negative electrode and insert organic material layer therebetween usually.Herein, for improving organic light-emitting device efficient and stability, can be mainly to comprise the layer of forming by different materials, for example the sandwich construction of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer forms this organic material layer.In having the organic luminescent device of this structure, when between two electrodes, applying voltage, be injected into organic material layer from the hole of anode and electronics from negative electrode, injected holes and electronics are combined together to form exciton.Further, when exciton drops to ground state, then can be luminous.Known this organic luminescent device has as characteristics such as self-luminous, high brightness, high efficiency, low driving voltage, wide visual angle, high-contrast and quick responses.
Disclosed polytype organic luminescent device in association area, it can be used for different purposes.Usually organic luminescent device is categorized as top emission type organic luminescent device, bottom-emission type organic luminescent device and dual-side luminescent type organic luminescent device.
Use in Active Matrix Display under the bottom-emission type organic light-emitting device situation, the front that thin-film transistor (TFT) is arranged on light emitting source is to reduce the aperture opening ratio of display.Under the situation for preparing the meticulousr display that needs a large amount of TFT, this problem is even more serious.Usually, bottom-emission type organic luminescent device has the aperture opening ratio less than 40%.For example, estimate that 14 inches WXGATFT display has the aperture opening ratio less than 20%.This low aperture opening ratio worsens the power consumption of operation OLED and life-span thereof.
By using the top emission type organic luminescent device to address the above problem.In the top emission type organic luminescent device, not with the bottom substrate electrodes in contact, promptly top electrodes is transparent basically in visible-range.For example, the transparent material that is used to form top emission type organic light-emitting device top electrodes is the conductive oxide as IZO (indium zinc oxide) or ITO (tin indium oxide).On the other hand, the electrode with substrate contacts is formed by metal usually.The dual-side luminescent type organic luminescent device also has the transparent top electrode identical with the top emission type organic luminescent device.
Fig. 1 and 2 has respectively illustrated the general structure of base section in the organic luminescent device with reverse geometry and forward structure.As illustrated in fig. 1 and 2, when preparation top emission type organic luminescent device, make in the deposition of metal electrode on the substrate on metal electrode, desirably not generate native oxide layer.Particularly, in the organic light-emitting device preparation process,, on metal electrode, formed native oxide layer via being exposed to outside moisture and oxygen using technology to make in the patterned process of metal electrode as photoetching process and etching method.
The character of described native oxide damage layer metal electrode, promptly electronics injects the hole injection character of character and Fig. 2 among Fig. 1, thereby organic light-emitting device efficient and brightness are worsened.
Prevent one of method that forms native oxide layer on the metal electrode be can be on the metal electrode of deposition original position form the method for organic material layer.In the method, metal electrode is not exposed to air.Therefore, on metal electrode, do not form oxide skin(coating).Yet it must carry out under vacuum, thereby needs higher cost and complicated technology.In addition, the raw material supplier usually provides the substrate that has deposited metal electrode on it, and before the organic material deposition, this exposure of substrates is in air.
Therefore,, need develop top emission type organic luminescent device with improved electronics injection or hole injection character although on metal electrode, there is the native oxide layer that forms, and described organic light-emitting device preparation method.
Summary of the invention
Technical problem
Therefore, the purpose of this invention is to provide a kind of organic luminescent device for preparing the organic light-emitting device method and prepared by this method, the native oxide layer that forms on metal electrode in described method is reduced or removes to improve the luminosity and the life characteristic as electronics or hole injection character of metal electrode.
Technical scheme
In order to achieve the above object, the invention provides and be used to prepare the organic light-emitting device method, described method comprises step: order forms first electrode that is formed by metal on substrate, one or more layers comprises the organic material layer and second electrode of luminescent layer, described method comprises step: before forming organic material layer, use oxidation rate cambium layer than the high metal of first electrode and on first electrode.
In addition, the invention provides a kind of organic luminescent device, described organic luminescent device comprises first electrode, one or more layers organic material layer that comprises luminescent layer and second electrode that are formed by metal of each sequential cascade, and further comprise between first electrode and organic material layer, by use that the oxidation rate metal high than first electrode form layer.
Beneficial effect
As mentioned above, in the present invention, when the preparation organic luminescent device, use oxidation rate metal on metal electrode the cambium layer higher than electrode, and do not need additional technique as dry ecthing, so that reduce effectively or remove the native oxide layer that on metal electrode, forms, thereby character is injected to improve the character as hole injection efficiency, low driving voltage and life-span in the electronics or the hole of having improved electrode.
Description of drawings
Fig. 1 illustrates the cross section of the top emission type organic light-emitting device polycrystalline substance with the conventional reverse geometry that comprises oxide skin(coating) on metal electrode.
Fig. 2 illustrates the cross section of the top emission type organic light-emitting device polycrystalline substance with the conventional forward structure that comprises oxide skin(coating) on metal electrode.
Fig. 3 illustrates the technology that forms additional layer according to an embodiment of the invention in organic luminescent device.
Fig. 4 example have the organic light-emitting device cross-sectional view of reverse geometry according to an embodiment of the invention.
Fig. 5~7 examples according to the organic light-emitting device I-E characteristic of comparing embodiment 1, embodiment 1 and embodiment 5.
Embodiment
Hereinafter, will describe the present invention in detail.
Be used for preparation organic light-emitting device method according to the present invention and comprise step: order forms first electrode that is formed by metal on substrate, one or more layers comprises the organic material layer and second electrode of luminescent layer, and further comprise step: before forming organic material layer, use oxidation rate cambium layer and on first electrode than the high metal of first electrode.Herein, use oxidation rate than the high metal of first electrode on first electrode in the cambial step, even even after formation since oxidation-reduction reaction cause the layer change of shape, cambial metal still is the oxidation rate metal higher than first electrode itself.
In preparation during organic luminescent device, in the process that makes first electrode patternization or afterwards,, can on first electrode, form for example aluminum oxide film (Al by being exposed to air
2O
3) layer native oxide layer.As a result, be difficult to move organic luminescent device.
Yet, in the present invention, in the preparation of devices process, before forming organic material layer, use oxidation rate metal on first electrode the cambium layer high, with minimizing or remove the native oxide layer that on first electrode, forms than first electrode.To be described more specifically below.
In the present invention, oxidation rate represent with respect to oxygen reaction before, the degree that increases with oxygen content behind the oxygen reaction.As mentioned above, using oxidation rate than the high metal of first electrode and under cambial situation on first electrode, this layer forms on the native oxide layer that forms on first electrode basically.At this moment, native oxide layer and forming on the described native oxide layer the layer between the interface, following oxidation-reduction reaction takes place:
[reaction scheme]
M
xO
y+yR→xM+yRO
Wherein M is the type that is used to form the metal of first electrode, and R is the type that is used for cambial metal on first electrode, and it is for having the more metal of high rate of oxidation than the metal that is used to form layer on first electrode, and x and y respectively are mol ratio.
That is to say that if use oxidation rate metal on the native oxide layer that first electrode on form the cambium layer high than first electrode, then native oxide layer has the more metal reaction of high rate of oxidation with metal than formation first electrode.According to this reaction, as shown in Figure 3, new formation metal level on first electrode, rather than the native oxide layer relevant with first electrode, and the metal higher than first electrode by oxidation rate formed metal oxide layer, rather than the oxidation rate metal level higher than first electrode.
Particularly, organic luminescent device as shown in Figure 3 has reverse geometry, and wherein first electrode is the negative electrode that comprises Al.The native oxide layer that forms on first electrode is aluminium oxide (Al
2O
3).Use Ca deposit film on alumina layer.At this moment, the film that uses Ca to form is preferably 1~10nm.Ca and Al
2O
3Carry out following reaction:
Al
2O
3+Ca→2Al+3CaO
As shown in Figure 3, two-layer by the new formation of the reaction between two kinds of materials, inject character thereby improved the organic light-emitting device electronics.
According to above-mentioned principle, in the present invention, the native oxide layer that is formed by metal on first electrode is removed or reduces, and does not have extra process equipment and do not produce from the side electric leakage, injects character or hole injection character with the electronics that improves first electrode that is formed by metal.Therefore, organic luminescent device according to the present invention has fabulous electronics or hole injection efficiency, and fabulous luminosity, life characteristic etc.
The preferred high metal of oxidation speed ratio first electrode has the oxide higher than the formation energy of MgO and forms energy (Δ H
f°)-635.09kJ/mol, but be not limited thereto.
The example of the metal that oxidation rate is higher than first electrode comprises alkali metal, alkaline-earth metal and composition thereof, particularly Ca, Mg, Ca/Ag, Mg/Ag etc.Because Li is unstable in air, it is difficult to deposition.Yet, under the situation of using method that can stably depositing Li, can use Li.
The table 1 of the example of the thermodynamic data of reference demonstration alkali metal oxide and alkaline earth oxide, because its strong oxidizing force, by on the surface of first electrode that forms by metal, absorbing oxygen, alkali metal, alkaline-earth metal or its mixture can prevent to form native oxide layer, and by reducing with the native oxide layer reaction that forms or removing native oxide layer.
Table 1
Material (phase) | ΔH f°(kJ/mol)? | S°(J/mol *K) |
MgO(s)? | -635.09? | 26.85? |
CaO(s)? | -601.24? | 38.19? |
SrO(s)? | -592.04? | 55.42? |
BaO(s)? | -548.10? | 72.05? |
Li 2O(s)? | -598.73? | 37.85? |
Na 2O(s)? | -417.98? | 75.04? |
K 2O(s)? | -363.17? | 94.03? |
Cs 2O(s)? | -92.05? | 318.08? |
Can form by using method by the layer that uses the oxidation rate metal higher to form, but be not limited thereto as thermal evaporation, sputter, electron beam evaporation, ion beam evaporation than first electrode.For instantiation, can pass through about 10 by the layer that uses the oxidation rate metal higher to form than first electrode
-7Vacuum thermal evaporation 10~20 seconds under the holder and the temperature of 600 ℃~900 ℃ of scopes and forming.But in this case, the electrode that has deposited metal preferably remains on normal temperature.In addition, as mentioned above, after using the oxidation rate metal cambium layer higher than first electrode, even described layer becomes oxide layer, cambial material is necessary for the oxidation rate metal higher than first electrode itself.If, then can not obtain according to the described effect of above-mentioned principle by using the metal oxide cambium layer.
Can comprise at least one level layer (sub-layer) by the layer that uses the oxidation rate metal higher to form than first electrode.
Form thin thickness by the layer that uses the oxidation rate metal higher to form, be preferably 1~10nm than first electrode.In above-mentioned scope, prevent that the native oxide layer that electronics or hole are injected from can be reduced or remove effectively.Equally, oxidation rate is higher and can partly or entirely react with the native oxide layer on first electrode that is formed by metal with the cambial metal of the thickness of several nanometers than first electrode, perhaps can by with surrounding air or moisture reaction formation oxide.
In addition, will use oxygen plasma treatment, can become oxide by the metal that oxidation rate is higher than first electrode by the layer that uses the oxidation rate metal higher to form than first electrode.
The metal oxide of the metal that oxidation rate is higher than first electrode works to change the energy level of first electrode surface, thereby by tunnelling (tunneling) electronics or hole is injected easily.
Usually, known in organic luminescent device the electric leakage between the neighbor be worthless.According to an embodiment of the invention, use shadow mask (shadow mask) only to form by the layer that uses the oxidation rate metal higher to form in the selection zone of first electrode than first electrode, the layer that is connected with pixel is not connected with adjacent pixels, thereby has avoided electric leakage from the side.
In active matrix organic light-emitting device, pixel and side can be separated by insulator.According to the present invention, as mentioned above, using shadow mask only under the cambial situation in the selection zone of first electrode, layer does not extend to the side insulation body between adjacent pixels, thereby has avoided electric leakage from the side.
Except the layer that forms by the use oxidation rate metal higher than first electrode is set between first electrode and organic material layer, use known materials, can prepare by method known in the association area have first electrode, one or more layers comprises the organic luminescent device of the luminous organic material layer and second electrode.
Can be top emission type, bottom-emission type or dual-side luminescent type according to organic luminescent device of the present invention.Particularly, preferred described organic luminescent device is top emission type or dual-side luminescent type.
Described first electrode can be formed by one deck metal level at least.The example that is used to form the metal of first electrode includes but not limited to aluminium, molybdenum, chromium, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead or its alloy.Wherein, the aluminium electrode that more preferably has relative high reflectance (>50%).Metal material can be deposited on the substrate by deposition process as thermal evaporation or sputter.Equally, can be by known method in the association area, as photoetching and etched figure formation electrode.
Described second electrode can be formed by transparent conductive material.To similar in first electrode, second electrode can be formed by one deck at least.At organic luminescent device according to the present invention is under the situation of top emission type or dual-side luminescent type, the necessary light conducting of second electrode, therefore use the transparent material with antiradar reflectivity usually, for example tin indium oxide (ITO) or indium zinc oxide (IZO) are as the material of second electrode.
According to the type of organic material, organic material layer can or comprise two-layer at least sandwich construction for single layer structure.That is to say to have hole and electric transmission character, and under the situation of the organic material of luminosity, organic material layer can form single layer structure in use.Simultaneously, inject the two-layer at least organic material layer that the organic material of at least a character of character forms and be deposited by having hole injection, hole transport, luminous, electric transmission and electronics to form sandwich construction.Except luminescent layer, organic material layer can further comprise electron injecting layer or hole injection layer.In these layers, can on by the layer that uses the oxidation rate metal higher to form, form one deck than first electrode.
Can form organic material layer by the organic material that comprises imidazoles, oxazole and thiazole.Organic material layer can have the metal of low work content by deposition, as the organic material of Li, Cs, Na, Mg, Sc, Ca, K, Ce, Eu and form.Alkali metal fluoride can be used for electron injecting layer effectively.Because it is electronics injection character admirably, lithium fluoride (LiF) is preferred.
Can prepare organic material layer by solwution method rather than sedimentation as spin coating, dip-coating, blade coating, silk screen printing, ink jet printing and thermal transfer.
According to organic luminescent device of the present invention can be that anode, second electrode are the forward structure of negative electrode for first electrode.In this case, can improve the hole injection character of device by the layer that between first electrode and organic material layer, forms.In addition, can be that negative electrode, second electrode are the reverse geometry of anode for first electrode according to organic luminescent device of the present invention.In this case, can improve the electronics injection character of device by the layer that between first electrode and organic material layer, forms.
Have according to the present invention the organic light-emitting device reverse geometry device example as shown in Figure 4.
With reference to figure 4, form negative electrode by using sputter or thermal evaporation deposition of aluminum on transparent glass substrate.Then, in photoetching process (photoresistor process) and etching process procedure, on the aluminium electrode, form native oxide (Al
2O
3) layer, thereby reduce electron injection efficiency.Forming on the aluminium electrode of native oxide layer, by deposition metals higher than first electrode such as sputter or thermal evaporations as the oxidation rate of alkali metal, alkaline-earth metal or its mixture.Form organic material layer on it as electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer and hole injection layer.Except being used as the IZO (indium zinc oxide) of second electrode, the deposit transparent anode material is with the preparation organic luminescent device thereon.Equally, organic luminescent device can be prepared into reverse geometry (inverted structure; Top light emitting), sequential cascade negative electrode on substrate wherein; The layer that uses alkali metal, alkaline-earth metal or its mixture and form; Organic material layer and anode.In addition, also can forward structure prepare organic luminescent device, wherein sequential cascade anode on substrate; The layer that uses alkali metal, alkaline-earth metal or its mixture and form; Organic material layer and negative electrode.
Execution mode
Hereinafter, describe organic luminescent device of the present invention in detail and be used to prepare this organic light-emitting device method with reference to embodiment.Yet embodiment will be used to illustrate purpose of the present invention, and therefore, scope of the present invention is not limited.
<embodiment 1〉the organic light-emitting device preparation
On glass substrate, by photoresist and etching, forming thickness is the aluminium electrode layer of 150nm, on the electrode layer of described formation, 10
-7Holder and inert gas (N
2Or Ar) atmosphere, under 700 ℃ by the thermal vacuum deposition apply in 10 seconds calcium (Ca) with formation have 2nm thickness layer.Subsequently, on this layer, form the LiF layer, and sequential cascade thickness is respectively electron transfer layer (following electron transport material), the luminescent layer (Alq of 20nm, 30nm, 40nm and 50nm thereon to thickness 1.5nm
3), hole transmission layer (NPB; 4,4 '-two [N-(1-naphthyl)-N-phenyl amino] biphenyl) and hole injection layer ((six nitriles, six azepine benzo [9,10] phenanthrene are HAT) as organic material layer for following hole-injecting material.Then, forming thickness by sputtering method on above-mentioned organic material layer is that the transparent IZO electrode of 150nm is as hole injecting electrode, with the preparation organic luminescent device.
[electron transport material]
[hole-injecting material]
<embodiment 2〉the organic light-emitting device preparation
Except after with the calcium coating, using O
2Outside the plasma treatment, prepare organic luminescent device in the mode identical with embodiment 1.The diagram and the operating condition of plasma device are as follows:
Audio frequency (the glow discharge device of 1~12kHz) electric capacity coupling model (RF-5S is made by Advanced energy) is used in use under normal pressure.That is to say, (apply the voltage of 7.5kVrms between the spacing=3.5cm) at two parallel poles.At first, in the plasma frequency of 5.0kHz, the helium of 13lpm (rise/minute) is injected in the plasma chamber continuously, to keep the stable state of plasma.At this state, inject the oxygen (O of 0.2lpm
2) with oxidation by calcium form the layer.Processing time is 3 minutes.
<embodiment 3〉the organic light-emitting device preparation
Except using magnesium (Mg) replaced C a, prepare organic luminescent device in the mode identical with embodiment 1.
<embodiment 4〉the organic light-emitting device preparation
Except using Ca/Mg (5: 5) replaced C a, prepare organic luminescent device in the mode identical with embodiment 1.
<embodiment 5〉the organic light-emitting device preparation
Except using caesium (Cs) replaced C a, deposit thickness is outside the 1.5nm, prepares organic luminescent device in the mode identical with embodiment 1.
<comparing embodiment 1〉the organic light-emitting device preparation
On the aluminium electrode, do not use the Ca cambium layer, prepare organic luminescent device by sequential cascade electron injecting layer (LiF), organic material layer and transparent IZO anode.
<comparing embodiment 2〉the organic light-emitting device preparation
Except direct deposition CaO cambium layer on the aluminium electrode, on the aluminium electrode, do not use outside the Ca cambium layer, prepare organic luminescent device in the mode identical with embodiment 1.
<comparing embodiment 3〉the organic light-emitting device preparation
Except direct deposition MgO cambium layer on the aluminium electrode, on the aluminium electrode, do not use outside the Ca cambium layer, prepare organic luminescent device in the mode identical with embodiment 1.
<experimental example 〉
In order relatively to use the oxidation rate metal higher than electrode in cambial situation on the metal electrode with using the effect of removing native oxide layer under the cambial situation of metal oxide, the organic light-emitting device electronics of measuring under the following conditions according to embodiment 1~4 and comparing embodiment 1~3 injects character, luminosity and life properties.
1. electronics injects the test of character
For definite electronics only injects character, determine electronics injection character for the layer/electron transfer layer/electron injecting layer/top of aluminium electrode/uses metal (embodiment) or metal oxide (comparing embodiment) to form as the device of the structure of IZO electrode by having the bottom.
2. lightness properties
PR650 colorimeter/radiometer that use is made by Photo-Research is determined at the organic light-emitting device brightness of preparation in embodiment 1~4 and the comparing embodiment 1~3, and also measures according to electric current variation (10mA/cm
2~100mA/cm
2) brightness.
3. life properties
Measure organic light-emitting device life-span that system measurement prepares useful life to measure scheduled current in embodiment 1~4 and comparing embodiment 1~3 (at 50mA/cm
2) under brightness, voltage etc.
The result summarizes in table 2.
Table 2
? | Quantum efficiency (%) | Voltage (V) | Brightness (cd/m 2)? | Life-span (hour) |
|
4.5? | ?6.5? | 10,077? | 800? |
|
4.1? | ?7.8? | 5,120? | 200? |
|
3.5? | ?6.3? | 2,220? | 1,000? |
|
3.8? | ?6.7? | 3,605? | 1,000? |
Comparing |
2.1? | ?12.5? | 2,100? | 300? |
Comparing |
3.8? | ?7.8? | 7,200? | 500? |
Comparing |
3.2? | ?7.5? | 6,820? | 550? |
As shown in table 2, compare with comparing embodiment 1~3, inject character, driving voltage and life characteristic according to the organic light-emitting device electronics of embodiment 1~4 and be improved.Therefore, find that the native oxide layer on the aluminium electrode is effectively removed.
Simultaneously, Fig. 5~7 have shown the organic light-emitting device I-E characteristic according to comparing embodiment 1 (native oxide film), embodiment 1 (Ca2nm) and embodiment 5 (Cs 1.5nm).As shown in Figure 5, on bottom electrode, form native oxide layer (Al
2O
3) situation under, I-E characteristic performance is asymmetric, and the existence of native oxide layer has prevented that electronics from injecting so that reduce the magnitude of current in positive voltage zone.On the other hand, shown in Fig. 6 and 7, under the situation that forms alkaline-earth metal layer and alkali metal layers, current-voltage character performance symmetry, and do not produce the current disturbing that causes by native oxide layer.
Claims (18)
1. one kind prepares the organic light-emitting device method, comprise step: order forms first electrode, one or more layers organic material layer that comprises luminescent layer and second electrode that is formed by metal on substrate, described method comprises step: before forming organic material layer, use oxidation rate metal on first electrode the cambium layer higher than first electrode, wherein, described layer is to form by oxidation rate metal and the reaction between the native oxide layer that forms on first electrode higher than first electrode.
2. preparation organic light-emitting device method according to claim 1, wherein, described first electrode is that anode and described second electrode are negative electrode.
3. preparation organic light-emitting device method according to claim 1, wherein, described first electrode is that negative electrode and described second electrode are anode.
4. preparation organic light-emitting device method according to claim 1, wherein, described organic luminescent device is top emission type or dual-side luminescent type.
5. preparation organic light-emitting device method according to claim 1, wherein, described first electrode is formed by the material that is selected from by in the group of aluminium, molybdenum, chromium, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead and its alloy composition.
6. preparation organic light-emitting device method according to claim 1, wherein, the metal that oxidation rate is higher than first electrode is selected from alkali metal, alkaline-earth metal and its mixture.
7. preparation organic light-emitting device method according to claim 1, wherein, when using oxidation rate than the high metal cambium layer of first electrode, described layer thickness is 1~10nm.
8. preparation organic light-emitting device method according to claim 1 wherein, when using oxidation rate than the high metal cambium layer of first electrode, is used shadow mask, and described layer is only in the selection zone formation of first electrode.
9. preparation organic light-emitting device method according to claim 1 wherein, in described organic material layer, is electron injecting layer or hole injection layer with the layer that contacts by the layer that uses the oxidation rate metal higher than first electrode to form.
10. preparation organic light-emitting device method according to claim 1, it further comprises step: with the layer of oxygen plasma treatment by using the oxidation rate metal higher than first electrode to form.
11. organic luminescent device, this organic luminescent device is included in first electrode, one or more layers organic material layer that comprises luminescent layer and second electrode that are formed by metal of each sequential cascade wherein, and further be included in layer between first electrode and the organic material layer, that pass through to use the oxidation rate metal formation higher than first electrode, wherein, described layer is to form by oxidation rate metal and the reaction between the native oxide layer that forms on first electrode higher than first electrode.
12. organic luminescent device according to claim 11, wherein, described first electrode is that anode and described second electrode are negative electrode.
13. organic luminescent device according to claim 11, wherein, described first electrode is that negative electrode and described second electrode are anode.
14. organic luminescent device according to claim 11, wherein, described organic luminescent device is top emission type or dual-side luminescent type.
15. organic luminescent device according to claim 11, wherein, described first electrode is formed by the material that is selected from by in the group of aluminium, molybdenum, chromium, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead and its alloy composition.
16. organic luminescent device according to claim 11, wherein, the metal that oxidation rate is higher than first electrode is selected from alkali metal, alkaline-earth metal and composition thereof.
17. organic luminescent device according to claim 11, wherein, by use that the oxidation rate metal higher than first electrode form layer thickness be 1~10nm.
18. organic luminescent device according to claim 11 wherein, in described organic material layer, is electron injecting layer or hole injection layer with the layer that contacts by the layer that uses the oxidation rate metal higher than first electrode to form.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060010722 | 2006-02-03 | ||
KR10-2006-0010722 | 2006-02-03 | ||
KR1020060010722 | 2006-02-03 | ||
US78228806P | 2006-03-15 | 2006-03-15 | |
US60/782,288 | 2006-03-15 | ||
PCT/KR2007/000570 WO2007089117A1 (en) | 2006-02-03 | 2007-02-02 | Fabrication method for organic light emitting device and organic light emitting device fabricated by the same method |
Publications (2)
Publication Number | Publication Date |
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CN101379885A CN101379885A (en) | 2009-03-04 |
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