CN108231436A - A kind of preparation method of micro- capacitance - Google Patents
A kind of preparation method of micro- capacitance Download PDFInfo
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- CN108231436A CN108231436A CN201711495041.2A CN201711495041A CN108231436A CN 108231436 A CN108231436 A CN 108231436A CN 201711495041 A CN201711495041 A CN 201711495041A CN 108231436 A CN108231436 A CN 108231436A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000013461 design Methods 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 16
- 239000002390 adhesive tape Substances 0.000 claims description 10
- 239000007888 film coating Substances 0.000 claims description 8
- 238000009501 film coating Methods 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000003292 glue Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000013475 authorization Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000007540 photo-reduction reaction Methods 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/003—Apparatus or processes for encapsulating capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/006—Apparatus or processes for applying terminals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laser Beam Processing (AREA)
- Micromachines (AREA)
Abstract
The present invention relates to a kind of micro- capacitor fabrication methods, include the following steps：(1) it designs micro- capacitance structure and keeps off film figure accordingly, while the gear film figure is imported in the computer of micro Process platform；(2) sample to be etched is made, which is positioned over treating at photoetching, and carry out negative photo for micro Process platform；(3) the above-mentioned sample processed is once cleaned, to remove no cured photoresist；(4) the above-mentioned sample after once cleaning is packaged, and carries out a plated film；(5) secondary cleaning is carried out to the sample after a plated film, the photoresist after being hardened with removal keeps off film figure to get micro- capacitance pattern；(6) lead is made in micro- capacitance pattern of above-mentioned acquisition.Compared with the preparation method of existing micro- capacitance, the present invention need not prepare specific mask plate, make simply, and fabrication cycle is short, low manufacture cost, and using Fs laser double photon 3D direct writes gear film figure so that the size flexibility and changeability of micro- capacitance.
Description
Technical field
The present invention relates to micro-nano processing technique field more particularly to a kind of micro- capacitor fabrication methods.
Background technology
In recent years, micro- capacitance has extensive use in the fields such as microelectronic component processing and development, and feature sizes are main
In the micron-scale with two ranks of nanoscale.Such as Patent No. ZL200310112933.1 (Authorization Notice No. CN1635820A)
Chinese invention patent disclose a kind of micro- capacitance microphone system and preparation method thereof；Patent No.
The Chinese invention patent of ZL201210466254.3 (Authorization Notice No. CN103822680A) discloses a kind of micro- condenser type water
Table.
It is generally required in the prior art through specific mask plate, is prepared using the method for mask, plated film, however mask
The cost of version is higher, and preparation process is cumbersome, simultaneously because also limiting the diversification of micro- capacitance structure the problem of mask plate.
Invention content
First technical problem to be solved by this invention provides a kind of simple and at low cost for the prior art
Micro- capacitor fabrication method.
Second technical problem to be solved by this invention be for the prior art and to provide a kind of micro- capacitor size flexible
Variable micro- capacitor fabrication method.
Technical solution is used by the present invention solves above-mentioned technical problem：A kind of micro- capacitor fabrication method, feature exist
In including the following steps：
(1) micro- capacitance structure and gear film figure are designed, and the gear film figure is imported in the computer of micro Process platform；
(2) sample to be etched is made, which is positioned over treating at photoetching, and carry out negative photo for micro Process platform；
(3) the above-mentioned sample processed is once cleaned, to remove no cured photoresist；
(4) the above-mentioned sample after once cleaning is packaged, and carries out a plated film；
(5) secondary cleaning is carried out to the sample after a plated film, the photoresist after being hardened with removal keeps off film figure to get micro-
Capacitance pattern；
(6) lead is made in micro- capacitance pattern of above-mentioned acquisition.
Preferably, micro- capacitance structure is interdigital micro- capacitance structure.Interdigital micro- capacitance structure, which has, conducts positive negative electricity
The advantages of lotus is functional, and capacitance can be increased in the case where not reducing electrode gap.
Preferably, the micro Process platform is Fs laser double photon micro Process platform.Fs laser double photon is micro- to be added
Work is that two-photon absorption locally occurs using femtosecond laser induced material, causes the processes such as photo-reduction, photopolymerization and photodissociation, profit
With Three-dimensional Control System so that this process selectively occurs in certain range, then using some subsequent places
Science and engineering skill obtains three-dimensional structure.
Preferably, the gear film figure is space pattern.Gear film figure in this way can be easier to be fixed on glass slide, and
And it is not easy to deform.
Preferably, in the step (2), the manufacturing process of sample is as follows：It is sticked in the middle part of glass slide with frosted
Photoresist, last covered is then added dropwise in the adhesive tape of speciality.Specially：In above-mentioned glass slide middle section, (about 34 carry
The distance of slide width) stick two above-mentioned adhesive tapes with frosted speciality, two adhesive tape interval 1-1.5cm, in two adhesive tapes
Between blank space drip appropriate ultraviolet photoresist, gently coverslip lid is located on ultraviolet photoresist, so that photoresist is with lid
The even drawout of slide, accomplishes bubble-free as possible, so as to obtain required sample to be etched
Preferably, a plated film is carried out using magnetron sputtering method in the step (4).
Preferably, the thickness of a plated film is 50nm.
Draw preferably, being made in above-mentioned micro- capacitance pattern of secondary film coating connection stitch method in the step (6)
Line, wherein secondary film coating use magnetron sputtering method.Specially：Stitch with AB glue is sticked to one end of microelectrode on glass slide, is protected
It demonstrate,proves the one side of stitch upward and is covered without AB glue, stitch will be connected upward with AB glue on one side in this way after secondary film coating,
AB glue is connect again in ramped shaped with microelectrode one end, is finally reached the purpose that stitch is connect with micro- capacitor plate.This method system
The lead of work can more rigid contact and resistance also smaller.
Compared with prior art, the advantage of the invention is that：Fs laser double photon 3D direct writes and magnetic are used in the present invention
The control sputter coating method that is combined makes micro- capacitance, specific without preparing compared with the preparation method of existing micro- capacitance
Mask plate, make simple, fabrication cycle is short, low manufacture cost, and using Fs laser double photon 3D direct writes gear film figure,
So that the size flexibility and changeability of micro- capacitance.
Description of the drawings
Fig. 1 is micro- capacitor design structure diagram in the embodiment of the present invention；
Fig. 2 is to keep off film figure design structure schematic diagram in the embodiment of the present invention on graphics software；
Fig. 3 is the schematic diagram that designs a model that film figure is kept off in the embodiment of the present invention；
Fig. 4 is the preparation of samples schematic diagram before photoetching in the embodiment of the present invention；
Fig. 5 is the preparation of samples schematic diagram after photoetching in the embodiment of the present invention；
Fig. 6 is the sample schematic diagram after a mask encapsulation in the embodiment of the present invention；
Fig. 7 is the sample schematic diagram after once being cleaned in the embodiment of the present invention；
Fig. 8 is the schematic diagram of micro- capacitance finished product in the embodiment of the present invention.
Specific embodiment
The present invention is described in further detail below in conjunction with attached drawing embodiment.
The main manufacturing process of micro- capacitance is as follows in the present embodiment：The design of micro- capacitance structure --- gear film figure system
Make the ----primary plating micro- capacitance of film production --- micro- capacitance leading wire encapsulates to form micro- capacitance sample --- secondary film coating connection needle
Foot.The length for micro- capacitance that the present embodiment makes is 5000 μm, and width is 20 μm.
Major experimental equipment and material used in the present embodiment：Fs laser double photon micro Process platform, laser light source
Equipment, light microscope, lifting platform, horizontal stand, aperture diaphragm, speculum, light-receiving screen, glass slide, coverslip, asphalt mixtures modified by epoxy resin
Fat glue, conducting wire etc..
It is as follows：
(1) first, by theory analysis, according to formulaIt is proposed a kind of interdigital micro- capacitance structure (such as Fig. 1
It is shown).This structure conduction positive and negative charge performance is more preferable, is equivalent in the case where not reducing electrode gap, increases capacitance
Value.Pass through mapping software (mapping software used in the present invention is the software that Laser Two-photon micro Process platform carries) design
Keep off film figure (as shown in Figures 2 and 3), it is seen that gear film figure is designed to space pattern in the present embodiment, in this way when making
Gear film figure can be more easily fixed on glass slide, and be unlikely to deform.Designed gear film figure is imported into control micro Process
In the computer of platform.
(2) then, sample to be etched is made, step is as follows：Prepare glass slide, coverslip, ultraviolet photoresist and there is frosted
The adhesive tape of speciality.First in above-mentioned glass slide middle section (aboutThe distance of glass slide width) stick two it is above-mentioned have mill
The adhesive tape of sand speciality, two adhesive tape interval 1-1.5cm, the blank space between two adhesive tapes drip appropriate ultraviolet photoresist, gently
Coverslip lid is located on ultraviolet photoresist by ground, so that photoresist accomplishes bubble-free (as schemed as possible with the even drawout of coverslip
Shown in 4), so as to obtain required sample to be etched.The sample made is placed on the treating at photoetching of micro Process platform, uses light
Lithography is processed etching.
(3) then, the micro- capacitance pattern processed is put into absolute ethyl alcohol and is once cleaned, so as to be not affected by laser
The ultraviolet photoresist polymerizeing leaves glass slide substrate with the flowing of absolute ethyl alcohol, and the ultraviolet photolithographic for hardening polymerization
Glue is then firmly attached to glass slide substrate, therefore is figuratum micro- capacitance sample (as shown in Figure 5) after cleaning.
(4) it is then packaged (as shown in Figure 6).Encapsulation uses method as mask plate method in the present embodiment, specifically such as
Under：The mask plate processed is covered in the slide specimen after above-mentioned primary cleaning, with spy between glass slide and mask plate
Matter plastic adhesive tape is supported, and prevents mask plate in mask process from touching the gear film figure that photoresist makes.
(5) packaged sample is subjected to a plated film, a plated film is using magnetron sputtering plating, film thickness in the present embodiment
Controllably, coating film thickness 50nm.
(6) mask plate on the sample after plated film is dialled and goes (as shown in Figure 7), glue gone to carry out second with NMP and cleaned,
With the photoresist of removal hardening and silverskin above is covered in, it is micro- capacitance pattern to finally obtain.
(7) obtained micro- capacitance sample is made into line lead.The present embodiment connects stitch method using secondary film coating,
It is as follows：Stitch with AB glue is sticked to one end of microelectrode on glass slide, ensures the one side of stitch upward and does not have
AB glue covers, and stitch will be connected upward with AB glue on one side in this way after secondary film coating, and AB glue is again in ramped shaped and microelectrode one
End connection, is finally reached the purpose (as shown in Figure 8) that stitch is connect with micro- capacitor plate.
Micro- electricity is made in the present invention of the method that Fs laser double photon 3D direct writes and magnetron sputtering plating are combined
Hold.Compared with traditional micro- capacitance processing method, Laser Processing has high precision machining, influences small, process velocity to rapidoprint
The advantages that fast and pollution and relatively small noise.Wherein, femtosecond laser has very high light after over-focusing in focus
Intensity so that when it interacts with material, can make material that significant nonlinear optical effect occur.Two-photon absorption
Refer under the excitation of strong light, the molecule of material absorbs two photons, the process from ground state transition to excitation state simultaneously.Femtosecond swashs
Light two-photon micro Process is that two-photon absorption locally occurs using femtosecond laser induced material, causes photo-reduction, photopolymerization and light
The processes such as dissociation, using Three-dimensional Control System so that this process selectively occurs in certain range, then pass through again
It crosses some subsequent treatment process and obtains three-dimensional structure.
Interdigital micro- capacitance structure is due to carrying the not smooth enough of glass basis piece, surrounding environment change causes laser power unstable etc.
Reason, when leading to the pattern that fabrication cycle number is excessive, overall structure is long, laser spot always deviates substrate and causes what is made
Pattern can usually deform even drift.Thus the present invention is designed to mountain using the method for being segmented 3D direct writes, and by gear film figure
Veiny space pattern, in this way when making, gear film figure can be easier to be fixed on glass slide, and be not easy to deform.This hair
The bright a kind of method that also proposed secondary film coating and make lead, the lead that this method makes can more rigid contact and resistance also more
It is small.
Claims (8)
1. a kind of micro- capacitor fabrication method, which is characterized in that include the following steps：
(1) it designs micro- capacitance structure and keeps off film figure accordingly, while the gear film figure is imported to the computer of micro Process platform
In；
(2) sample to be etched is made, which is positioned over treating at photoetching, and carry out negative photo for micro Process platform；
(3) the above-mentioned sample processed is once cleaned, to remove no cured photoresist；
(4) the above-mentioned sample after once cleaning is packaged, and carries out a plated film；
(5) secondary cleaning is carried out to the sample after a plated film, the photoresist after being hardened with removal keeps off film figure to get micro- capacitance
Pattern；
(6) lead is made in micro- capacitance pattern of above-mentioned acquisition.
2. micro- capacitor fabrication method as described in claim 1, which is characterized in that micro- capacitance structure is interdigital micro- capacitive junctions
Structure.
3. micro- capacitor fabrication method as described in claim 1, which is characterized in that the micro Process platform is the double light of femtosecond laser
Sub- micro Process platform.
4. micro- capacitor fabrication method as described in claim 1, which is characterized in that the gear film figure is space pattern.
5. such as the micro- capacitor fabrication method of claims 1 to 3 any one of them, which is characterized in that in the step (2), sample
Manufacturing process it is as follows：The adhesive tape with frosted speciality is sticked in the middle part of glass slide, photoresist is then added dropwise, finally closes the lid
Slide.
6. such as the micro- capacitor fabrication method of claims 1 to 3 any one of them, which is characterized in that use magnetic in the step (4)
It controls sputtering method and carries out a plated film.
7. micro- capacitor fabrication method as claimed in claim 6, which is characterized in that the thickness of a plated film is 50nm.
8. such as the micro- capacitor fabrication method of claims 1 to 3 any one of them, which is characterized in that use two in the step (6)
Secondary plated film connection stitch method makes lead in above-mentioned micro- capacitance pattern, and wherein secondary film coating uses magnetron sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711495041.2A CN108231436B (en) | 2017-12-31 | 2017-12-31 | Preparation method of micro capacitor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711495041.2A CN108231436B (en) | 2017-12-31 | 2017-12-31 | Preparation method of micro capacitor |
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| Publication Number | Publication Date |
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| CN108231436A true CN108231436A (en) | 2018-06-29 |
| CN108231436B CN108231436B (en) | 2020-02-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711495041.2A Active CN108231436B (en) | 2017-12-31 | 2017-12-31 | Preparation method of micro capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920659A (en) * | 2019-03-19 | 2019-06-21 | 北京理工大学 | A method of based on dynamic control high-precision processing micro super capacitor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751434A (en) * | 2012-06-11 | 2012-10-24 | 湖北大学 | Method for preparing electromechanical transduction element based on potassium-sodium niobate lead-free piezoelectric nanofibers |
| CN103903862A (en) * | 2012-12-27 | 2014-07-02 | 北京大学 | Transparent flexible electrochemical device based on planar comb-shaped electrode structure, and preparation method thereof |
| CN104766724A (en) * | 2015-03-06 | 2015-07-08 | 武汉理工大学 | Microfabrication process for micro capacitor based on cobaltosic oxide nano structure |
| CN105097295A (en) * | 2015-07-23 | 2015-11-25 | 武汉理工大学 | High-performance miniature supercapacitor and fabrication method thereof |
| CN106158411A (en) * | 2016-08-17 | 2016-11-23 | 武汉理工大学 | A kind of high-performance symmetrical expression metal-oxide base micro super capacitor and preparation method thereof |
| CN106252076A (en) * | 2016-08-31 | 2016-12-21 | 北京埃德万斯离子束技术研究所股份有限公司 | High-end miniature thin-film capacitor and preparation method |
-
2017
- 2017-12-31 CN CN201711495041.2A patent/CN108231436B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751434A (en) * | 2012-06-11 | 2012-10-24 | 湖北大学 | Method for preparing electromechanical transduction element based on potassium-sodium niobate lead-free piezoelectric nanofibers |
| CN103903862A (en) * | 2012-12-27 | 2014-07-02 | 北京大学 | Transparent flexible electrochemical device based on planar comb-shaped electrode structure, and preparation method thereof |
| CN104766724A (en) * | 2015-03-06 | 2015-07-08 | 武汉理工大学 | Microfabrication process for micro capacitor based on cobaltosic oxide nano structure |
| CN105097295A (en) * | 2015-07-23 | 2015-11-25 | 武汉理工大学 | High-performance miniature supercapacitor and fabrication method thereof |
| CN106158411A (en) * | 2016-08-17 | 2016-11-23 | 武汉理工大学 | A kind of high-performance symmetrical expression metal-oxide base micro super capacitor and preparation method thereof |
| CN106252076A (en) * | 2016-08-31 | 2016-12-21 | 北京埃德万斯离子束技术研究所股份有限公司 | High-end miniature thin-film capacitor and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| 宋长发: "《电子组装技术》", 31 March 2010 * |
| 谭峭峰: "《激光束二元光学变换及其应用》", 30 November 2016 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920659A (en) * | 2019-03-19 | 2019-06-21 | 北京理工大学 | A method of based on dynamic control high-precision processing micro super capacitor |
| CN109920659B (en) * | 2019-03-19 | 2020-12-01 | 北京理工大学 | Method for high-precision machining of micro super capacitor based on electronic dynamic regulation and control |
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| CN108231436B (en) | 2020-02-07 |
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