CN103399465B - Method for realizing dual-face alignment photoetching by utilization of one-face exposure machine - Google Patents
Method for realizing dual-face alignment photoetching by utilization of one-face exposure machine Download PDFInfo
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- CN103399465B CN103399465B CN201310342944.2A CN201310342944A CN103399465B CN 103399465 B CN103399465 B CN 103399465B CN 201310342944 A CN201310342944 A CN 201310342944A CN 103399465 B CN103399465 B CN 103399465B
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Abstract
The invention provides a method for realizing dual-face alignment photoetching by utilization of a one-face exposure machine, and belongs to the photoelectric and micro-nano processing technical fields. A masking plate A and a masking plate B are designed, and respectively corresponds to the required graphs of a surface a and a surface b of a base sheet. Centrosymmetric alignment marks of inner and outer layers are designed on the masking plate A. The alignment mark of the inner layer is arranged in the base sheet size range. First, photoetching is carried out on the surface a of the base sheet by utilization of the masking plate A. Then photoetching is carried out on a surface of a transparent substrate by utilization of the masking plate A. The surface, with finished photoetched graphs, of the transparent substrate is confronted with the surface a, with finished photoetched graphs, of the base sheet. After the base sheet and the substrate are bonded, photoetching is carried out on the surface b of the base sheet by utilization of the masking plate B. Finally the base sheet and the transparent substrate are separated by utilization of a heating or dissolving method, and a base sheet with dual-face alignment graphs is obtained. Dual-face alignment is achieved by means of a transparent substrate, dual-face photoetching is realized by utilization of a common one-face exposure machine, and the dual-face photoetching process cost is lowered.
Description
Technical field
The invention belongs to photoelectric technology and technical field of micro and nano fabrication, relate to a kind of method utilizing single-side exposure machine to realize double-sided alignment photoetching.
Background technology
Dual surface lithography technology is the micro-nano technology technology that a kind of application makes semiconductor devices and optical device very widely.The manufacture of the devices such as such as pressure transducer, quartz oscillator, microelectron-mechanical processing, hybrid circuit, power semiconductor body, bulk acoustic wave device, discharge diode, all needs to utilize dual surface lithography technology critically to aim at exposure to substrate tow sides.Current dual surface lithography technique utilizes sided exposure machine mostly, two kinds are broadly divided into: a kind of is utilize infrared microscope to aim at the mask of another side through substrate according to the difference of its alignment principles, this method is for the substrate of infrared light is not helpless thoroughly, and need special infreared imaging device to realize, and precision is lower; Another kind utilizes two groups of object lens observe simultaneously substrate upper and lower surface and mask and aim at, and this method is used a kind of more method at present.But these two kinds of methods all depend on complex structure and expensive appliance arrangement has come, process costs is higher, for some unable purchases or small-size laboratory or the workshop of developing sided exposure machine, dual surface lithography technique just cannot be utilized to carry out scientific research or production.Therefore, a kind of method that common single-side exposure machine can be utilized to carry out the simple low cost of dual surface lithography is found to have very high realistic meaning.
Summary of the invention
In order to reduce dual surface lithography process costs, solving the problem utilizing common single-side exposure machine cannot realize dual surface lithography, proposing a kind of straightforward procedure completing double-sided alignment photoetching by transparent substrates.
The technical scheme that technical solution problem of the present invention adopts is as follows:
A kind of method utilizing single-side exposure machine to realize double-sided alignment photoetching.
Be made up of following steps:
One, make the first mask plate and the second mask plate, the first mask plate has centrosymmetric internal layer alignment mark and outer alignment mark, and lay respectively in substrate figure and outside substrate figure, the second mask plate has the outer alignment mark consistent with the first mask plate;
Two, the first mask plate carries out photoetching and etching at substrate upper surface, makes figure;
Three, the first mask plate carries out photoetching and etching on transparent substrates surface, makes figure;
Four, by internal layer alignment mark, the transparent substrates surface and substrate upper surface 3-1 that are manufactured with figure are carried out aiming at and bonding die;
Five, make the outer alignment mark of transparent substrates overlap with the outer alignment mark of the second mask plate, utilize the second mask plate to carry out photoetching and etching at substrate lower surface, make the graphic structure needed;
Six, substrate is separated with transparent substrates, obtains the substrate with double-sided alignment figure.
The invention has the beneficial effects as follows:
Simple novel two-sided aligning photoetching technological method of the present invention, double-sided alignment is completed by transparent substrates (as glass etc.), do not rely on sided exposure machine costly, solve and utilize common single-side exposure machine to realize the problem of dual surface lithography, reduce dual surface lithography process costs.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the first mask plate 1;
Fig. 2 is the schematic diagram of the second mask plate 2;
Fig. 3 is the schematic diagram of the transparent substrates 4 utilizing the first mask plate to make;
Fig. 4 is the schematic diagram utilizing the first mask plate 1 to carry out photoetching on substrate upper surface 3-1;
Fig. 5 utilizes the first mask plate 1 to carry out the schematic diagram of photoetching on transparent substrates surface;
Transparent substrates has been made the surface of figure and substrate upper surface 3-1 to carry out aiming at and the schematic diagram of bonding die by Fig. 6 under the microscope;
Fig. 7 is the schematic diagram utilizing the second mask plate 2 to carry out photoetching at substrate lower surface 3-2.
Embodiment
Below in conjunction with accompanying drawing, this method is described in further detail:
As shown in Figure 1-2, design the first mask plate 1 and the second mask plate 2, figure needed for the upper surface 3-1 of the corresponding substrate of difference and lower surface 3-2, the internal layer alignment mark 1-1 of design centre symmetry and outer alignment mark 1-2 on the first mask plate 1, internal layer alignment mark 1-1 is in substrate 3 range of size, outer alignment mark 1-2 design is outside substrate 3 range of size, be less than the size of transparent substrates 4, by the internal layer alignment mark 4-3 of internal layer alignment mark 1-1 and transparent substrates 4, the transparent substrates surface 4-1 and substrate upper surface 3-1 being manufactured with figure is carried out aiming at and bonding die, and outer alignment mark 1-2 is when being for carrying out photoetching to substrate lower surface 3-2, second mask plate 2 and transparent substrates 4 are manufactured with aiming at of the transparent substrates surface 4-1 of figure.The outer alignment mark 2-1 that on second mask plate 2, then design is identical with the first mask plate 1.Consider that transparent substrates 4 is all made by the first mask plate 1 with the figure of substrate upper surface 3-1, and substrate has the surperficial 4-1 of figure and substrate surface 3-1 to be aspectant when bonding die, the figure of the two is mirror, therefore the alignment mark of mask plate must be designed to centrosymmetric, and guarantee alignment mark under conditions mirror still can play alignment effect.
As shown in Figure 3-4, first the first mask plate 1 is utilized to carry out photoetching at the upper surface 3-1 of substrate, make the graphic structure needed, and by wet method or dry etching, figure is transferred to substrate upper surface 3-1 from photoresist, next the first mask plate 1 is utilized to carry out photoetching on transparent substrates 4 surface, and by etching, Graphic transitions is surperficial to transparent substrates, the figure of the figure after making and substrate upper surface 3-1 is mirror, but alignment mark is consistent.
As shown in Figure 5, by relative with the upper surface 3-1 that litho pattern carried out by substrate 3 for transparent substrates surface 4-1 transparent substrates 4 being manufactured with figure, transparent substrates 4 is upper, because substrate is transparent, therefore the internal layer alignment mark 1-1 in two faces can be utilized under the microscope to aim at, the two is bonded together by recycling transparent cured glue 6, this step can be undertaken by two kinds of modes: a kind of mode first can complete aligning by microscope 5, then from substrate 3 and transparent substrates 4 surface of contact edge instillation transparent cured glue 6, capillary action is utilized naturally to infiltrate between two faces, bonding is completed after solidification, another kind of mode is on substrate 3, first drip transparent cured glue 6, then transparent substrates 4 is pressed on substrate 3, and completed aligning before colloid solidification.The range of choice of transparent cured glue 6 is relatively wider, as ultra-violet curing glue, various instant drying adhesives etc., but must meet two conditions: one is to have certain light transmission, namely transparent, and this in aligning and solidification process, does not affect observation in order to ensureing; Two is convenient removals, can remove as utilized the short-cut methods such as heating, dissolving, to ensure can be successfully separated with transparent substrates 4 by substrate 3 after whole dual surface lithography technique terminates.
As shown in Figure 6, after substrate 3 and transparent substrates 4 bond, the second mask plate 2 is utilized to carry out photoetching on substrate lower surface 3-2, now utilize be outer alignment mark 4-2 in the outer alignment mark 2-1 of the second mask plate 2 and transparent substrates 4 to complete aligning, also achieve the aligning of substrate upper surface 3-1 and substrate lower surface 3-2 simultaneously.Then the figure of needs is produced by being etched in substrate lower surface 3-2.Finally utilize the method for heating or dissolving to be separated with transparent substrates 4 by substrate 3, thus obtain the substrate 3 with double-sided alignment figure.Can see, we only need by a transparent substrates 4 as intermediate medium, make the dual surface lithography technique that expensive sided exposure machine originally can only be relied on just to complete, only need now to utilize common single-side exposure machine to complete, greatly reduce process costs.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of amplifying out or variation be still among the protection domain of the invention.
Claims (2)
1. utilize single-side exposure machine to realize a method for double-sided alignment photoetching, realized by following steps:
One, the first mask plate (1) and the second mask plate (2) is made, first mask plate (1) has centrosymmetric internal layer alignment mark (1-1) and outer alignment mark (1-2), lay respectively in substrate figure and outside substrate figure, the second mask plate (2) has the outer alignment mark (2-1) consistent with the first mask plate (1);
Two, utilize the first mask plate (1) to carry out photoetching and etching at substrate upper surface (3-1), make figure;
Three, utilize the first mask plate (1) to carry out photoetching and etching on transparent substrates (4) surface, make figure;
Four, by the internal layer alignment mark (4-3) of internal layer alignment mark (1-1) and transparent substrates 4, the transparent substrates surface (4-1) and substrate upper surface (3-1) that are manufactured with figure are carried out aiming at and bonding die;
Five, transparent substrates (4) outer alignment mark is made to overlap with the second mask plate (2) outer alignment mark (2-1), utilize the second mask plate (2) to carry out photoetching and etching at substrate lower surface (3-2), make the figure needed;
Six, substrate (3) is separated with transparent substrates (4), obtains the substrate (3) with double-sided alignment figure.
2. a kind of method utilizing single-side exposure machine to realize double-sided alignment photoetching according to claim 1, it is characterized in that: by relative with the upper surface (3-1) that litho pattern carried out by substrate for the surface (4-1) of transparent substrates (4) upper making figure, under microscope (5), utilize the internal layer alignment mark in two faces to aim at, the two is bonded together by recycling transparent cured glue (6), this step can be undertaken by two kinds of modes: a kind of mode first can complete aligning by microscope (5), then from substrate (3) and transparent substrates (4) surface of contact edge instillation transparent cured glue (6), capillary action is utilized naturally to infiltrate between two faces, bonding is completed after solidification, another kind of mode is first at substrate (3) upper upper transparent cured glue (6), then transparent substrates (4) is pressed on substrate (3), and completed aligning before colloid solidification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310342944.2A CN103399465B (en) | 2013-08-08 | 2013-08-08 | Method for realizing dual-face alignment photoetching by utilization of one-face exposure machine |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310342944.2A CN103399465B (en) | 2013-08-08 | 2013-08-08 | Method for realizing dual-face alignment photoetching by utilization of one-face exposure machine |
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| Publication Number | Publication Date |
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| CN103399465A CN103399465A (en) | 2013-11-20 |
| CN103399465B true CN103399465B (en) | 2015-04-22 |
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| CN201310342944.2A Expired - Fee Related CN103399465B (en) | 2013-08-08 | 2013-08-08 | Method for realizing dual-face alignment photoetching by utilization of one-face exposure machine |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109426087A (en) * | 2017-08-25 | 2019-03-05 | 上海微电子装备（集团）股份有限公司 | For the exposure method and device of transparent substrate material |
| CN113608411A (en) * | 2021-07-29 | 2021-11-05 | 华天慧创科技（西安）有限公司 | Preparation method of double-sided graph of glass substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004045933A (en) * | 2002-07-15 | 2004-02-12 | Nikon Corp | Double-sided resist pattern forming method |
| JP4158514B2 (en) * | 2002-12-24 | 2008-10-01 | ウシオ電機株式会社 | Double-sided projection exposure system |
| JP2006278648A (en) * | 2005-03-29 | 2006-10-12 | Nsk Ltd | Double side exposure method |
| CN102262358A (en) * | 2011-04-13 | 2011-11-30 | 合肥芯硕半导体有限公司 | Inner laminate side-to-side aligning apparatus and method |
| CN102968000A (en) * | 2012-11-21 | 2013-03-13 | 京东方科技集团股份有限公司 | Dual-sided processing method and exposure device |
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