CN108228918A - It is a kind of establish for calculate deposition rate theoretical model method - Google Patents
It is a kind of establish for calculate deposition rate theoretical model method Download PDFInfo
- Publication number
- CN108228918A CN108228918A CN201611133632.0A CN201611133632A CN108228918A CN 108228918 A CN108228918 A CN 108228918A CN 201611133632 A CN201611133632 A CN 201611133632A CN 108228918 A CN108228918 A CN 108228918A
- Authority
- CN
- China
- Prior art keywords
- deposition rate
- film
- method described
- film thickness
- fitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 72
- 238000000151 deposition Methods 0.000 claims abstract description 71
- 238000001659 ion-beam spectroscopy Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 32
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 238000002474 experimental method Methods 0.000 abstract description 7
- 238000010884 ion-beam technique Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 238000005315 distribution function Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
- G16Z99/00—Subject matter not provided for in other main groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The embodiment of the invention discloses a kind of methods established for calculating the theoretical model of deposition rate in ion beam sputtering thin-film process, the film thickness data of planar discrete point to be measured are obtained by experiment test, unknown parameter data being fitted in processing acquisition theoretical model, and then the theoretical model can be used and calculate the deposition rate for obtaining the plane any point.Solves the problems, such as the deposition rate that theoretical model can not be used to calculate spatial points during ion beam sputter depositing at present.
Description
Technical field
The present invention relates to film monitoring fields, more particularly to a kind of when preparing optical thin film using ion beam sputtering, build
Stand for calculate film deposition rate theoretical model method.
Background technology
In recent years, it is higher and higher to the performance indicator requirement of thin-film component with the continuous development of optics science and technology, it is thin
Membrane component Film Design becomes to become increasingly complex with preparation, higher and higher to depositing operation required precision.Depositing operation specifically wraps
Include traditional thermal evaporation techniques and ion beam sputtering technology.
Ion beam sputtering technology has broad application prospects compared to traditional thermal evaporation techniques.By ion beam sputtering technology
Prepared film, which has, to be lost small, and technology stability is high, favorable repeatability, and consistency is high, and it is excellent that resisting laser damage performance is good etc.
Point.During ion beam sputtering deposition, the uniformity controlling of film thickness is the spike filter for being coated with high-precision requirement
Wait a critical issue of film products.Film thickness can be usually multiplied acquisition by deposition rate with sedimentation time.
The evaporation source of traditional thermal evaporation techniques is point source, establishes accurate mathematical model to calculate the deposition of space any point
Rate, and uniformity baffle is designed according to deposition rate, so as to accurately adjust the film thickness uniformity of film.Ion beam sputtering
Sputtering source be high energy ion beam be emitted to target material surface formation quadric surface source, quadric surface source occurs a series of multiple on target
Miscellaneous physical chemistry effect, such as sputtered atom, secondary electron and positive and negative example emission of ions, adsorbing contaminant desorption and decomposition, surface
The chemical reaction of etching and substance, ion implanting of target material surface etc..For these reasons, ion beam sputtering technology is difficult to establish
Effective theoretical model directly calculates deposition rate of the target in spatial points.
Therefore, the method for deposition rate when ion beam sputtering is coated with thin-film component is calculated for improving film preparation precision,
It realizes the film thickness uniformity of accurate adjustment film, and finally realizes and design and prepare high performance thin film element with important meaning
Justice.
Invention content
For during ion beam sputtering deposition, theoretical model can not be used to calculate the deposition rate of spatial points, this
Invention proposes a kind of method established for calculating the theoretical model of deposition rate in ion beam sputtering, and the scheme of this method is such as
Under：Adjust the process conditions and substrate location of ion beam sputtering film deposition apparatus；Start ion beam sputtering film deposition apparatus
And perform predetermined time sputtering work；Substrate after plated film is divided into a plurality of small lattice, the plural number is measured using film thickness gauge
A small center of a lattice film thickness and obtain a plurality of film thickness data；The film thickness data divided by the predetermined time are deposited
Speed data；Data fitting is carried out to the deposition rate data, obtains the unknown parameter in theoretical model.
Preferably, the process conditions include line, beam pressure, target angle, the target of ion beam sputtering film deposition apparatus
Material pivot angle.
Preferably, the substrate uses the K9 glass of single-sided polishing.
Preferably, the verticality of the plan-position of the substrate and horizontal plane is less than 0.1 millimeter.
Preferably, the predetermined time of the sputtering work is 50 minutes.
Preferably, the substrate after the plated film is divided into a plurality of small lattice, and the specification of each small lattice is equal.
Preferably, the film thickness gauge takes multiple measurements, and multiple measurement results are averaged single small lattice, with institute
State film thickness data of the average value as the small lattice.
Preferably, the data fitting includes horizontal direction fitting and vertical direction fitting.
Preferably, the theoretical model is Gauss model,
Preferably, the horizontal direction is fitted using Gauss formula, obtains the result parameter of fitting；By the fitting
Result parameter A parameters in Gauss model are vertically obtained using ECS formula, by the result parameter of the fitting along perpendicular
Nogata is to the x parameter obtained using fitting of a polynomial in Gauss model.
As can be seen from the above technical solutions, the embodiment of the present invention has the following advantages：
The film thickness data of planar discrete point to be measured are obtained by experiment test, data are fitted and are managed
By the unknown parameter in model, and then the theoretical model can be used and calculate the deposition rate for obtaining the plane any point.Pass through
Theoretical model calculates the deposition rate of any point, and then the uniformity baffle of thin-film component is directly calculated, without by
The Optimizing Mode that initial baffle is iterated greatly improves conventional efficient.The present invention is easy to operate, is familiar with ion beam sputtering deposition
Machine can measure；Finally, the present invention has the adjustment of curved surface elements uniform film thickness and ion beam sputtering deposition technique important
Practical significance.
Description of the drawings
Fig. 1 is the structure diagram of intermediate ion beam sputtering film deposition apparatus of the embodiment of the present invention；
Fig. 2 is that a kind of foundation is provided in the embodiment of the present invention for calculating the flow chart of the theoretical model of deposition rate；
Fig. 3 is the film thickness data result figure that experiment test obtains；
Fig. 4 is the comparison diagram of experimental data and Gauss curve fitting curve as X=0 and Y=0；
Fig. 5 is the residual plot between the result that theoretical model calculates and the result of experiment test.
Specific embodiment
In order to which those skilled in the art is made to more fully understand the present invention program, below in conjunction in the embodiment of the present invention
The technical solution in the embodiment of the present invention is clearly and completely described in attached drawing, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's all other embodiments obtained without making creative work should all belong to the model that the present invention protects
It encloses.
Term " first ", " second ", " third " " in description and claims of this specification and above-mentioned attached drawing
The (if present)s such as four " are the objects for distinguishing similar, and specific sequence or precedence are described without being used for.It should manage
The data that solution uses in this way can be interchanged in the appropriate case, so that the embodiments described herein can be in addition to illustrating herein
Or the sequence other than the content of description is implemented.In addition, term " comprising " and " having " and their any deformation, it is intended that
Cover it is non-exclusive include, for example, containing the process of series of steps or unit, method, system, product or equipment need not limit
In those steps or unit for clearly listing, but may include not listing clearly or for these processes, method, production
The intrinsic other steps of product or equipment or unit.
Fig. 1 is the structure diagram of intermediate ion beam sputtering film deposition apparatus of the embodiment of the present invention.Ion beam sputtering film
Precipitation equipment 100 includes sputtering source 10, vacuum chamber 20 and condenser pump 30.Be equipped with target 22 in vacuum chamber 20, specimen holder 24 and
The substrate 26 being placed on specimen holder 24.In the present embodiment, sputtering source 10 is generated certain using the radio-frequency ion source of 16cm
The Xe ion streams of beam intensity and certain energy.Xe ion streams form ion beam, and ion beam bombards target with certain incident angle
Material 22 and the atom for sputtering its surface layer, the surface layer atomic deposition that target 22 is sputtered form film to 26 surface of substrate.
Substrate 26 is the substrate of thin film deposition.In the present embodiment, substrate 26 is single made of K9 materials using 400mm × 400mm
Mirror polish glass.Preferably, specimen holder 24 uses rotatable planetary rotation structure, such as planetary plate.Preferably, in order to preferably
Target 22 is bombarded, ion beam sputtering film deposition apparatus 100 further includes auxiliary sputtering source 40.In the present embodiment, auxiliary sputtering
Source 40 uses the radio-frequency ion source of 12cm.
Fig. 2 be the embodiment of the present invention establish for calculate deposition rate theoretical model flow chart.In this embodiment,
The test experiments shown in Fig. 1 first that carried out on ion beam sputtering film deposition apparatus obtain planar discrete point to be measured
Film thickness data, then unknown parameter data being fitted in processing acquisition theoretical model, and then the theoretical model can be used
Calculate the deposition rate for obtaining the plane any point.It is specific steps are as follows described：
Step S11：Adjust the process conditions of ion beam sputtering film deposition apparatus 100 and the position of substrate 26.Technique item
Part includes line, beam pressure, target angle, the target pivot angle of ion beam sputtering film deposition apparatus 100.In this embodiment, from
The line of beamlet sputtered film precipitation equipment 100 is set as 175 milliamperes, and beam pressure is set as 700 volts, and the angle of target 22 is adjusted to
167 °, the pivot angle of target 22 is set as 3.5 °.In this embodiment, substrate 26 uses the K9 of the single-sided polishing of 400mm × 400mm
Glass.26 place plane of substrate is plane to be measured, and substrate 26 is fixed by the bracket on specimen holder 24, and causes plane to be measured
It is 5mm with a distance from disk from specimen holder 24.Adjust the upright position of substrate 26 so that the verticality of plane to be measured is less than
0.1mm.Preferably, plane to be measured is vertical with horizontal plane holding.
Step S12：After the process conditions of ion beam sputtering film deposition apparatus 100 and 26 position of substrate are adjusted in place,
Start ion beam sputtering film deposition apparatus 100 and perform predetermined time sputtering work.In this embodiment, according to substrate 26
Size and ion beam sputter depositing film apparatus 100 parameter, the preset time of sputtering is 50 minutes.Sputtering time can also
For other numerical value, such as 30 minutes, 1 hour etc..
Step S13：Substrate 26 after plated film is divided into a plurality of small lattice, a plurality of small lattice are measured using film thickness gauge
Center film thickness and obtain a plurality of film thickness data.In this embodiment, the specification of substrate 26 is 400mm × 400mm.It is preferred that
, decile is carried out to the substrate 26 after plated film so that the specification of a plurality of small lattice is equal.It in this embodiment, will be after plated film
Substrate 26 is divided into 40 × 40 lattices, and the specification of each lattice is 10mm × 10mm.Using film thickness gauge to 40 × 40
Lattice carries out film thickness measuring, and then obtains 40 × 40 film thickness data, and each film thickness data correspond to the two dimension of a lattice
Position coordinates.Preferably, in the film thickness for measuring each lattice, the method for average is measured using multiple.Specifically such as, to same
The film thickness of lattice carries out 10 measurements, and the measurement result of 10 times is carried out sum-average arithmetic, using average value as the small side
The film thickness data of lattice.
Step S14：The film thickness data divided by the predetermined time are obtained into deposition rate data.In the embodiment
In, detailed process is：By 40 × 40 film thickness data divided by 50 minutes, 40 × 40 deposition rates are obtained.Each deposition rate
The location point of corresponding corresponding lattice.Deposition rate and location point are drawn, obtain two-dimentional deposition rate as shown in Figure 3
Distribution map.X-direction in Fig. 3 is the horizontal direction of planetary plate plane, the direction and the ion beam direction one of the transmitting of sputtering source 10
It causes.Y-direction in Fig. 3 is the vertical direction of planetary plate plane.Fig. 3 data show that the deposition rate in planetary plate plane is presented
Apparent inhomogeneities, the deposition rate near central point is up to 0.7nm/s, and is significantly reduced by the deposition rate of proximal edge,
Respective regions are even lower than 0.2nm/s.During ion beam sputtering target atom deposits to 26 plane of substrate, if target 22
Surface is absolutely smooth, Mass Distribution absolute uniform, and when sputtering process does not change target face structure, the sputtered atom on 22 surface of target leads to
Amount distribution meets cosine angle distribution.At this point, sputtered atom is deposited on the deposition rate distribution of substrate surface formation, meet random become
The Gauss distribution characteristics of amount.
Step S15：Deposition rate distribution rule in analysis chart 3 it is found that deposition rate meets Gauss distribution characteristics, so as to
Dimensional Gaussian model is as the theoretical model for calculating deposition rate.The formula of dimensional Gaussian model is as shown in Equation 1, including 3 not
Know parameter, respectively A, ω and yc.
Deposition rate data in further analysis chart 2 when X (or Y) takes definite value, can obtain a series of Y-directions (or X side
To) one-dimensional deposition rate distribution curve.Using the Hermite series expansions of Gauss distribution functions, it is fitted using data soft
Part is fitted these curves.As Y=0, in X direction heavy that is obtained by the experiment of ion beam sputtering film deposition apparatus
Product rate is as shown in Fig. 4 orbicular spots；In the result such as Fig. 4 that be fitted by the Hermite series expansions using Gauss distribution functions
Shown in Horizontal axis (Y=0) curve.As X=0, obtained edge is tested by ion beam sputtering film deposition apparatus
The deposition rate of Y-direction is as shown in Fig. 4 centers point；The knot being fitted by the Hermite series expansions using Gauss distribution functions
Fruit is as shown in Horizontal axis (X=0) curve in Fig. 4.It can be seen from the figure that using Gauss distribution functions
Hermite series expansions can be fitted the deposition rate distribution curve of X and Y value well.Determining the curve of X-direction expires
Sufficient ECS functions distribution, and the curve of Y-direction is satisfied by standard Gauss distributions.
That further studies two-dimentional deposition rate distribution in Fig. 2 embodies form,
Using standard Gauss function, the one-dimensional deposition rate curve of all discrete Y-directions is fitted respectively, so
Fitting parameter A, ω and the yc of all Gauss functions of final finishing have found that A matches with the variation relation of X values with ECS functions, and
For ω with the functional relation of X in nonlinear change, yc is constant.Therefore, it is fitted to obtain A (x) using ECS function pair A values, adopts
ω values are fitted to obtain ω (x) with 4 order polynomials.The parameter of two-dimentional deposition rate theoretical model has thus been obtained, has been had
Body formula is as follows：
ω (x)=b0+b1x+b2x2+b3x3+b4x4(formula 3)
It, will be using the result of calculation and experimental data of fitting formula for the validity of the two-dimentional deposition rate theoretical model of verification
Subtract each other, obtain the regression criterion figure of two-dimentional deposition rate distribution formula as shown in Figure 5.As shown in Figure 5, regression criterion amplitude exists
Between [- 0.02,0.02].Therefore, the theoretical model obtained by the present embodiment effectively calculates ion beam sputter depositing film
Two-dimentional deposition rate distribution.
It is rotated when specimen holder 24 is in plated film, the equation of motion of specimen holder 24 is substituted into two-dimentional deposition rate theoretical model,
Still the deposition rate of thin-film component arbitrary point can be determined.
In embodiment provided herein, it should be understood that disclosed device and method can pass through others
Mode is realized.The apparatus embodiments described above are merely exemplary, the line, beam pressure, target angle, target pivot angle
Concrete numerical value can be adjusted with Binding experiment condition, such as line is set using 225mA, beam pressure using 900V, target angle
It is set to 287 °；The division of the specification and plated film back substrate of substrate can also use other grade form-separatings, such as using 300mm ×
The substrate of 300mm, and plated film back substrate is divided into the lattice of 50 × 50 6mm × 6mm.
A kind of establish provided by the present invention is carried out for calculating the method for the theoretical model of film deposition rate above
It is discussed in detail, for the thought of those of ordinary skill in the art, according to the present invention embodiment, in specific embodiment and should
With there will be changes in range, in conclusion the content of the present specification should not be construed as limiting the invention.
Claims (10)
1. it is a kind of establish for calculate deposition rate theoretical model method, which is characterized in that including：
Adjust the process conditions and substrate location of ion beam sputtering film deposition apparatus；
Start ion beam sputtering film deposition apparatus and perform predetermined time sputtering work；
Substrate after plated film is divided into a plurality of small lattice, a plurality of small center of a lattice film thickness is measured using film thickness gauge and obtains
Obtain a plurality of film thickness data；
The film thickness data divided by the predetermined time are obtained into deposition rate data；
Data fitting is carried out to the deposition rate data, obtains the unknown parameter in theoretical model.
2. according to the method described in claim 1, it is characterized in that, the process conditions are filled including ion beam sputtering thin film deposition
Line, beam pressure, target angle, the target pivot angle put.
3. according to the method described in claim 1, it is characterized in that, the substrate uses the K9 glass of single-sided polishing.
4. according to the method described in claim 1, it is characterized in that, the plan-position of the substrate and the verticality of horizontal plane are small
In 0.1 millimeter.
5. according to the method described in claim 1, it is characterized in that, the predetermined time of the sputtering work is 50 minutes.
6. according to the method described in claim 1, it is characterized in that, the substrate after the plated film is divided into a plurality of small lattice,
The specification of each small lattice is equal.
7. according to the method described in claim 1, it is characterized in that, the film thickness gauge takes multiple measurements single small lattice, and
Multiple measurement results are averaged, using the average value as the film thickness data of the small lattice.
8. according to the method described in claim 1, it is characterized in that, data fitting includes horizontal direction fitting and vertical side
To fitting.
9. according to the method described in claim 8, it is characterized in that, the theoretical model be Gauss model,
10. according to the method described in claim 9, it is characterized in that, the horizontal direction is fitted using Gauss formula, obtain
The result parameter that must be fitted；The result parameter of the fitting is vertically obtained to the A in Gauss model to join using ECS formula
The result parameter of the fitting is vertically obtained the ω parameters in Gauss model by number using fitting of a polynomial.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611133632.0A CN108228918A (en) | 2016-12-10 | 2016-12-10 | It is a kind of establish for calculate deposition rate theoretical model method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611133632.0A CN108228918A (en) | 2016-12-10 | 2016-12-10 | It is a kind of establish for calculate deposition rate theoretical model method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108228918A true CN108228918A (en) | 2018-06-29 |
Family
ID=62637889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611133632.0A Pending CN108228918A (en) | 2016-12-10 | 2016-12-10 | It is a kind of establish for calculate deposition rate theoretical model method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108228918A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117230416A (en) * | 2023-07-12 | 2023-12-15 | 中国科学院上海光学精密机械研究所 | Baffle design method for correcting film thickness distribution of magnetron sputtering element coating film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101660134A (en) * | 2009-09-22 | 2010-03-03 | 电子科技大学 | Method for improving magnetron-sputtered film thickness uniformity |
| CN102776484A (en) * | 2012-06-27 | 2012-11-14 | 中国科学院光电技术研究所 | Design method of baffle for controlling distribution of film thickness of planar optical element in film coating planetary system |
| CN102787301A (en) * | 2012-07-23 | 2012-11-21 | 中国科学院光电技术研究所 | Design method for baffle plate used for controlling film thickness distribution on conical optical element in film plating planetary system |
| WO2013170455A1 (en) * | 2012-05-16 | 2013-11-21 | 吉林省锐意美科技有限公司 | Pixelized scintillation crystal film, and preparation method and application thereof |
-
2016
- 2016-12-10 CN CN201611133632.0A patent/CN108228918A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101660134A (en) * | 2009-09-22 | 2010-03-03 | 电子科技大学 | Method for improving magnetron-sputtered film thickness uniformity |
| WO2013170455A1 (en) * | 2012-05-16 | 2013-11-21 | 吉林省锐意美科技有限公司 | Pixelized scintillation crystal film, and preparation method and application thereof |
| CN102776484A (en) * | 2012-06-27 | 2012-11-14 | 中国科学院光电技术研究所 | Design method of baffle for controlling distribution of film thickness of planar optical element in film coating planetary system |
| CN102787301A (en) * | 2012-07-23 | 2012-11-21 | 中国科学院光电技术研究所 | Design method for baffle plate used for controlling film thickness distribution on conical optical element in film plating planetary system |
Non-Patent Citations (3)
| Title |
|---|
| ZHANG LI-CHAO 等: "Calibration of deposition rates of multilayer coatings by sputtering depositions", 《OPTICS AND PRECISION ENGINEERING 18》 * |
| 贺健康等: "离子束溅射制备GdF_3光学薄膜沉积速率分布特性", 《中国光学》 * |
| 齐红基等: "溅射粒子能量对金属Mo薄膜表面特性的影响", 《物理学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117230416A (en) * | 2023-07-12 | 2023-12-15 | 中国科学院上海光学精密机械研究所 | Baffle design method for correcting film thickness distribution of magnetron sputtering element coating film |
| CN117230416B (en) * | 2023-07-12 | 2024-03-01 | 中国科学院上海光学精密机械研究所 | Baffle design method for correcting film thickness distribution of magnetron sputtering element coating film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8293126B2 (en) | Method and system for multi-pass correction of substrate defects | |
| CN108441838B (en) | Method for ion beam sputtering deposition of film on surface of medium-large diameter optical element | |
| CN107532290A (en) | For the method for the substrate for producing coating | |
| CN105088171A (en) | Film thickness control method based on quartz oscillatory type film thickness monitor | |
| CN105039875A (en) | Ni-Nb metal thin film with ultra-low roughness and preparation method of Ni-Nb metal thin film | |
| DE102013221029A1 (en) | Method and device for producing uniform layers on moving substrates and layers produced in this way | |
| CN106567044A (en) | Film preparation cavity and method | |
| CN108228918A (en) | It is a kind of establish for calculate deposition rate theoretical model method | |
| CN105132881B (en) | It is a kind of to be used for system design of optical film method of the heavy caliber radius of curvature than lens | |
| US10812035B2 (en) | SAW device and method of manufacture | |
| US8790498B2 (en) | Method and device for ion beam processing of surfaces | |
| US8298432B2 (en) | Method and system for adjusting beam dimension for high-gradient location specific processing | |
| CN106637114B (en) | Cluster beam experimental device and preparation method of nanocluster | |
| CN104020715A (en) | Optimization processing method for preparation of SERS substrate based on FIB direct-writing processing | |
| Sakiew et al. | Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering | |
| CN115790412B (en) | Film thickness test and uniformity adjustment method | |
| JP2009228062A (en) | Sputtering film deposition apparatus and sputtering film deposition method | |
| Bayly et al. | Ellipsometric analysis of refractive index profiles produced by ion implantation in silica glass | |
| CN104878356A (en) | Magnetic control sputtering target material magnet placing angle determining method | |
| CN112025417B (en) | Non-contact ion beam polishing method for surface of optical diamond material | |
| Xu et al. | Be coatings on spherical surface for NIF target development | |
| KR20130136385A (en) | Method for coating with an evaporation material | |
| Tonini et al. | Morphology of niobium films sputtered at different target–substrate Angle | |
| CN111578848B (en) | Method and system for determining line width value of line width standard sample | |
| CN208136320U (en) | The coating apparatus of uniform film thickness |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180629 |
|
| RJ01 | Rejection of invention patent application after publication |