CN108206239B - Based on gold-ferro-electricity single crystal system negative differential resistance effect device and its preparation - Google Patents
Based on gold-ferro-electricity single crystal system negative differential resistance effect device and its preparation Download PDFInfo
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- CN108206239B CN108206239B CN201611167302.3A CN201611167302A CN108206239B CN 108206239 B CN108206239 B CN 108206239B CN 201611167302 A CN201611167302 A CN 201611167302A CN 108206239 B CN108206239 B CN 108206239B
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Abstract
The present invention relates to a kind of based on gold-ferro-electricity single crystal system negative differential resistance effect device and its preparation, the negative differential resistance effect device includes two gold electrodes respectively as source electrode and drain electrode, contact is arranged between two gold electrodes and constitutes the ferro-electricity single crystal of intermediate fringe area, and it is separately connected the grid on the ferro-electricity single crystal both sides, the gold electrode, ferro-electricity single crystal is the layer material constituted in plane positioned at X-axis and Y-axis, two gold electrodes and ferro-electricity single crystal along Z axis periodic arrangement and are constituted the negative differential resistance effect device with " sandwich structure " of " gold electrode-ferro-electricity single crystal-gold electrode " formula.Compared with prior art, CdPbO of the invention3Middle Cd2+4d track the density of states and gold electrode (Au) surface state between couple, the negative differential resistance effect for causing in certain bias range electric current that can reduce instead with bias increase is expected to become the candidate that the next generation prepares high-performance electronic component.
Description
Technical field
The present invention relates to a kind of negative differential resistance effect devices, more particularly, to a kind of based on gold-ferro-electricity single crystal system
Negative differential resistance effect device and its preparation.
Background technique
Semiconductor transistor is one of greatest invention in human history.Traditional silicon-based semiconductor transistor development is answered
With and achieve huge success, but designing and manufacturing for silicon-based semiconductor transistor is mode from top to down, according to rubbing
That law, the density of electronic device are just gradually approaching the limit of physics and size.Scientists and engineers predict single silicon substrate
The actual size of semiconductor transistor and actual range between them will be less than the wavelength of an electronics.Quantum mechanics is told
The wavelength of our electronics is 10nm or so, quantum size effects (such as the tunnel when the size of transistor is less than this length
Channel effect) running parameter for largely effecting on transistor even made into transistor nonfunctional.From manufacturing process, it is traditionally used for making
The laser etching techniques for making transistor can the failure when transistor size is less than optical maser wavelength.These will finally restrict traditional silicon substrate
The size and integrated level of electronic device, theoretically with say silicon-based semiconductor transistor in experimental viewpoint all and will face it is impassable
Obstacle.So finding update, more powerful electronic device has become electronics science field and is badly in need of considering the problems of and solving.
In recent years the coming year research it has also been found that it is some have determine the crystal of space structure and electronic structure with special Electric transport properties,
And the appearance of such device will make up the deficiency based on semiconductor material devices, it is potential to prepare high-performance electric as the next generation
The candidate of sub- component.
Single molecules apparatus theory receives special attention, because this system is the nonequilibrium condition driven by voltage
Under opening quantized system.Under low bias voltage, the non-equilibrium nature of molecule knot is negligible, the electricity of device
Stream-voltage characteristic can be calculated by the electronic structure of equilibrium state.However at higher bias voltages, more advanced processing is
It is required.It, can be by calculating transmission coefficient in elastic tunnelling (tunelling electrons and system do not carry out energy exchange)
So as to calculating current, this transmission coefficient is the function using bias voltage as independent variable.It can for non-resilient tunnelling situation
To be solved with nonequilibrium state Green's function.Negative differential resistance (negative differential resistance) is exactly one
Determining electric current in bias range can reduce instead with bias increase.Because it is many as Esaki diode and vibration two pole of tunnel
The basic effect for managing (resonant tunneling diode) these electronic devices, so negative differential resistance effect has attracted very
The interest of polymolecular electronics researcher.Wherein vibration tunnel diode can be applicable to memory chip, switch and logic function list
In member.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind to be based on gold-ferroelectricity list
The negative differential resistance effect device of crystal system and its preparation, can realize by ferroelectric crystal under the connection of gold electrode, due to
CdPbO3Middle Cd2+4d track the density of states and gold electrode (Au) surface state between couple, cause in certain bias range electric
The negative differential resistance effect that stream can reduce instead with bias increase is expected to become the time that the next generation prepares high-performance electronic component
Choosing.
The purpose of the present invention can be achieved through the following technical solutions:
It is a kind of based on gold-ferro-electricity single crystal system negative differential resistance effect device, including respectively as source electrode and drain electrode
Two gold electrodes, contact are arranged between two gold electrodes and constitute the ferro-electricity single crystal of intermediate fringe area, and are separately connected institute
The grid on ferro-electricity single crystal both sides is stated, the gold electrode, ferro-electricity single crystal are the thin layer material constituted in plane positioned at X-axis and Y-axis
Material, two gold electrodes and ferro-electricity single crystal are with " sandwich structure " of " gold electrode-ferro-electricity single crystal-gold electrode " formula along Z axis
Periodic arrangement simultaneously constitutes the negative differential resistance effect device.
The spacing of two gold electrodes is nanometer scale as a preferred embodiment of the above solution, and the ferro-electricity single crystal is thin
Layer material along Z-direction with a thickness of nanometer scale.
The ferro-electricity single crystal is ferroelectric crystal CdPbO as a preferred embodiment of the above solution,3。
As above-mentioned preferred embodiment it is further preferred that the negative differential resistance effect, is the sun using the ferro-electricity single crystal
It couples and is formed between the density of states of the 4d track of ion Cd and gold electrode surfaces state.
Preparation method based on gold-ferro-electricity single crystal system negative differential resistance effect device, comprising the following steps:
(1) using gold surface as the source electrode and drain electrode of negative differential resistance effect device；
(2) oxygen surface and two end in contact of gold electrode that will constitute the ferro-electricity single crystal of intermediate fringe area, form oxide layer；
(3) X-axis will be located at and the material thin-layer of gold electrode and ferro-electricity single crystal in Y-axis composition plane is arranged in the Z-axis direction
Column form " sandwich structure ", and by described in " sandwich structure " constitutes the bipolar electrode body of layer structure along Z axis periodic arrangement
The electric transportation system of system；
(4) it is designed on the ferro-electricity single crystal both sides of the electric transportation system and gives over to the hole of grid, and made in hole
The grid to get arrive the negative differential resistance effect device.
It is of the invention based on gold-ferro-electricity single crystal system negative differential resistance effect device, source electrode and drain electrode will be made using gold
For electrode material, intermediate fringe area uses ferroelectric crystal CdPbO3As tunnel layer, described one kind is based on gold-ferroelectric single crystal
The negative differential resistance effect device of system is the density of states and gold electrode using the 4d track of the cationic Cd of the ferroelectric crystal
(Au) it couples and is formed between surface state, due to ferroelectric crystal CdPbO3The performances such as the spontaneous polarization having and piezoelectricity, with
Gold electrode surfaces contact forms unique negative differential resistance effect.
Compared with prior art, negative differential resistance effect device provided by the invention works at room temperature, due to iron
Transistor CdPbO3The performances such as the excellent spontaneous polarization and piezoelectricity that have, oxygen surface and gold electrode knot by the compound
It closes, bipolar electrode sandwich structure in the range of nanometer scale can be formed.For the crystal with periodic structure, it is clipped in metal
Electronics device system between electrode is a non-equilibrium acyclic system, and electron transport can be by Density functional side
Method processing.One designed due to hydridization effect between the density of states and gold electrode (Au) surface state of the 4d track of divalent Cd ion
Kind of ferroelectric crystal device, contact with gold electrode surfaces form it is unique with negative differential resistance effect electronics device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of negative differential resistance effect device of the invention；
Fig. 2 is the current-voltage correlation figure of negative differential resistance effect device of the invention；
Fig. 3 transports spectrum for negative differential resistance effect device of the invention.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
It based on gold-ferro-electricity single crystal system negative differential resistance effect device system include that spacing is being received as shown in Figure 1, a kind of
Two gold electrodes of rice magnitude are as source electrode and drain electrode, ferro-electricity single crystal CdPbO3As intermediate fringe area.The wherein left and right electricity
Pole material is gold, is arranged successively in z-axis direction and left and right gold electrode by the ferroelectric crystal thin layer of thickness nanometer scale and constitutes three
Periodic layer structure is tieed up, ferro-electricity single crystal also contacts the source electrode,.In the electronic transport of electronics device, electric current mainly by into
The transmission channels for entering to transport fortune window (transport window) provide.These transmission channels are brilliant by the energy band and ferroelectricity of electrode
The energy level of body matches generation, and ferroelectric crystal energy level here is projection from the-energy level of Hamilton is in harmony, because in the coupling of electrode
Under, each energy level of ferroelectric crystal energy level and folder between the electrodes is different.The energy band of electrode can be flat with the variation of bias
It moves and bending, the energy level of the left-right parts of fringe area can have different responses under the different bias voltage in left and right, if left and right
The energy level of two sides is matched before this under the driving of bias voltage and is not mismatched, and may be made in this way into the saturating of transfer passages
It penetrates channel and first increases and reduce afterwards, that is, electric current first increases and reduces afterwards, thus generates negative differential resistance effect.
Based on the structure of gold-ferro-electricity single crystal system negative differential resistance effect device, current direction is along the direction z.Description
The density matrix of electronics distribution can be obtained from a series of Green's function matrix.The L- of its density matrix and Green's function matrix
C-R (left electrode-centre fringe area-right electrode) part, this part can be obtained from the inverse matrix of finite matrix,
Wherein HL, HRAnd HCIt is L, the Hamiltonian matrix in the region R and C respectively.VL(VR) it is the mutual of the region (R) L and the region C
Effect.Other parts for being coupled in semi-infinite long electrode between L, R are all by be in harmony certainly can ΣLAnd ΣRIt is included in.For for gold
Electrode and ferroelectric crystal contact surface part are by full relaxation, until interatomic active force is less thanElectric current by
Following formula obtains
WhereinIt is Fermi-Dirac (Fermi-Dirac) distribution, μL,R
It is the chemical potential of left and right electrode.T (E, Vb) it is in ENERGY E and bias voltage VbUnder transmission coefficient.The electron temperature that we use
It is 1000K.
The current-voltage correlation figure of negative differential resistance effect device of the present invention shown in Fig. 2；The figure shows electric current
Change as follows: in the range of 0~0.3V, electric current increase is very slow；In the range of 0.50~0.70V, electric current is relatively fast
Increase fastly；However in the range of 0.70~0.80V, electric current, which reaches, to be saturated and slightly drops with the increase of bias voltage
It is low；In the range of 0.80~1.00V, electric current increases sharply.According to the above results, it can be seen that 0.7~0.8V of bias it
Between, with the increase of bias, electric current but declines therewith, forms interesting negative differential resistance effect.
Negative differential resistance effect device of the present invention shown in Fig. 3 transports spectrum, and the figure illustrates the transport systems
Several different biasings in transmission spectrum.Electricity when several finite bias are applied to left and right electrode, in the electrode of left and right
Chemical potential separately down and moves up Vb/2.Different bias (V between 0.00~1.00Vb) in, discovery transmission spectrum is in
Now similar peak and characteristic.By comparing the peak value under different biass near fermi level, it has been found that with bias by
Cumulative to add, peak moves down.It is worth noting that, existing for the zero-bias for being higher than fermi level and being located at 0.50 He
Small T (the V of two of 0.90eVb, E) and peak.When being biased in the range of 0.20~1.00V, two T (Vb, E) and peak Xiang Zuoyi
It is dynamic.Especially in the range of 0.70~0.80V, it is noted that a small T (Vb, E) and peak value enters biography near 0.20eV
Defeated window simultaneously gradually dies down, this is the origin of NDR effect in the transport system.In view of Au electrode and lithium niobate type CdPbO3In
The coupling of adjacent O atom, with the increase of bias voltage, the combination of molecular orbit energy state dies down, and leads to the ferroelectric tunnel junction shape
At negative differential resistance effect.
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (2)
1. a kind of based on gold-ferro-electricity single crystal system negative differential resistance effect device, which is characterized in that including respectively as source electrode
With two gold electrodes of drain electrode, contact is arranged between two gold electrodes and constitutes the ferro-electricity single crystal of intermediate fringe area, Yi Jifen
The grid on the ferro-electricity single crystal both sides is not connected, and the gold electrode, ferro-electricity single crystal are to constitute in plane positioned at X-axis and Y-axis
Layer material, two gold electrodes and ferro-electricity single crystal are with " the sandwich knot of " gold electrode-ferro-electricity single crystal-gold electrode " formula
Structure " is along Z axis periodic arrangement and constitutes the negative differential resistance effect device；
The spacing of two gold electrodes is nanometer scale, the thickness along Z-direction of the ferro-electricity single crystal layer material
For nanometer scale；
The ferro-electricity single crystal is ferroelectric crystal CdPbO3；
Negative differential resistance effect is the density of states and gold electrode surfaces state of the 4d track using the cationic Cd of the ferro-electricity single crystal
Between couple and formed.
2. the preparation method as described in claim 1 based on gold-ferro-electricity single crystal system negative differential resistance effect device, special
Sign is, comprising the following steps:
(1) using gold surface as the source electrode and drain electrode of negative differential resistance effect device；
(2) oxygen surface and two end in contact of gold electrode that will constitute the ferro-electricity single crystal of intermediate fringe area, form oxide layer；
(3) material thin-layer of the gold electrode being located in X-axis and Y-axis composition plane and ferro-electricity single crystal is arranged into shape in the Z-axis direction
At " sandwich structure ", and will described in " sandwich structure " the bipolar electrode system of layer structure is constituted along Z axis periodic arrangement
Electric transportation system；
(4) it is designed on the ferro-electricity single crystal both sides of the electric transportation system and gives over to the hole of grid, and in hole described in production
Grid to get arrive the negative differential resistance effect device.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094478A (en) * | 2013-01-21 | 2013-05-08 | 中国科学技术大学 | Unimolecule negative differential resistance device based on silicon-molecule compound system and preparation method |
| CN103842562A (en) * | 2011-08-02 | 2014-06-04 | 意大利理工学院 | Ordered superstructures of octapod-shaped nanocrystals, their process of fabrication and use thereof |
| CN104779275A (en) * | 2015-04-30 | 2015-07-15 | 湖北工业大学 | Self-excited spinning single-electron electromagnetic field effect transistor, preparation method and application |
| CN105103322A (en) * | 2013-03-14 | 2015-11-25 | 沙特基础工业公司 | Ferroelectric capacitor with improved fatigue and breakdown properties |
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2016
- 2016-12-16 CN CN201611167302.3A patent/CN108206239B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103842562A (en) * | 2011-08-02 | 2014-06-04 | 意大利理工学院 | Ordered superstructures of octapod-shaped nanocrystals, their process of fabrication and use thereof |
| CN103094478A (en) * | 2013-01-21 | 2013-05-08 | 中国科学技术大学 | Unimolecule negative differential resistance device based on silicon-molecule compound system and preparation method |
| CN105103322A (en) * | 2013-03-14 | 2015-11-25 | 沙特基础工业公司 | Ferroelectric capacitor with improved fatigue and breakdown properties |
| CN104779275A (en) * | 2015-04-30 | 2015-07-15 | 湖北工业大学 | Self-excited spinning single-electron electromagnetic field effect transistor, preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| First-principles study on the dielectric and transport properties of the LiNbO3-type CdPbO3;Jing Zhang等;《International Journal of Modern Physics B》;20161213;权利要求6；说明书第[0010]-[0016]段 * |
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