CN108206204B - Spin filtering heterojunction device based on cobalt-molecular multiferroic material and preparation thereof - Google Patents
Spin filtering heterojunction device based on cobalt-molecular multiferroic material and preparation thereof Download PDFInfo
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Abstract
The invention relates to a spin filtering heterojunction device based on a cobalt-molecular multiferroic material and a preparation method thereof, wherein the spin filtering heterojunction device comprises two cobalt electrodes which are respectively used as a source electrode and a drain electrode, and a molecular multiferroic material (NH) which forms a middle scattering region material thin layer between the two cobalt electrodes4)3Cr2O8And a linker molecule multiferroic material (NH)4)3Cr2O8And the two cobalt electrodes are thin layers formed by metal material cobalt. Compared with the prior art, the invention has the advantages that the molecular multiferroic material Cs (NH) is adopted4)CrO8Magnetic center chromium ion (Cr)5+) The 3d orbit is in spin interaction with the surface of the Co electrode to form a unique spin filtering effect, and in addition, the spin filtering effect has good and stable performance, is independent of the type of a semiconductor substrate of the device, is easy to realize, and can be generally applied to molecular semiconductor electronic devices.
Description
Technical Field
The invention relates to the technical field of spin electronics devices, in particular to a spin filtering heterojunction device based on a cobalt-molecular multiferroic material system and a preparation method thereof.
Background
Molecular electronics research is electronics at the molecular level, with the goal of using single molecules, supramolecules, or molecular clusters to assemble logic circuits, and even complete molecular computers, instead of solid electronic components such as silicon-based semiconductor transistors. Its research content includes the synthesis of various molecular electronic devices, performance testing, and how to assemble them together to achieve certain logical functions. Compared with the traditional solid electronics, the molecular electronics has strong advantages. The existing microelectronic processing technology is close to the development limit after 10 years, and the continuous reduction of the line width ensures that the solid electronic device does not conform to the traditional operation rule any more; meanwhile, the reduction of the line width also increases the processing cost. Molecular electronics is expected to solve these problems 1cm in the Pentium computer chip2Can integrate 107-108 electronic components, while molecular electronics allows integration of 1 on the same size area014 single-molecule electronic element, the improvement of integration level will greatly improve the operation speed. Meanwhile, since the molecular electronics adopts a bottom-up mode to assemble a logic circuit, and the used elements are synthesized in a large scale through chemical reaction, the production cost is greatly reduced compared with the traditional photoetching method.
The combination of both molecular and spintronics to create a new discipline would bring the advantages of both molecular and spintronics to great advantage. This new interdisciplinary discipline is called molecular spintronics from a fundamental and technical perspective, the ability to manipulate the electron spin of organic molecular materials provides a new convenient route to the study of spintronics. This is due to the advantage of very weak spin-orbit coupling and hyperfine interaction (hyperfine interaction) of organic molecules, which allows spin coherence (spin coherence) times and distances to be much longer than conventional metals and semiconductors. The energy required to change the spin state of an electron is only one-thousandth of the energy required to push the electron to move, and obviously, the energy consumed by a spin electronics device is very little compared with the traditional silicon-based semiconductor electronics. At present, in order to capture the high point of future science and technology, a special plan for developing nano electronics and molecular electronics is established in many developed countries, huge manpower and material resources are invested, and a series of breakthroughs are made. Day 21 of 12/2001, a series of achievements from molecular electronics were rated by the journal of science as the first decade of technology development in 2001.
Disclosure of Invention
The present invention aims to overcome the defects of the prior art and provide a spin filtering heterojunction device based on a cobalt-molecular multiferroic material and a preparation method thereof, wherein the device can be made of a molecular multiferroic material (NH)4)3Cr2O8Under the connection of cobalt electrode, due to molecular multiferroic material (NH)4)3Cr2O8Magnetic center chromium ion (Cr)5+) The spin interaction between the 3d orbitals of (a) and (b) leads to the coupling between the surface of its oxygen atom and the surface state of the cobalt electrode (Co), resulting in a multiferroic moleculeThe heterojunction has a spin filtering effect, and the molecular multiferroic tunnel junction is expected to be used for preparing high-performance molecular spin electronic crystal devices.
The purpose of the invention can be realized by the following technical scheme:
a spin filtering heterojunction device based on cobalt-molecular multiferroic material comprises two cobalt electrodes respectively used as a source electrode and a drain electrode, and a molecular multiferroic material (NH) forming a middle scattering region material thin layer between the two cobalt electrodes4)3Cr2O8And a linker molecule multiferroic material (NH)4)3Cr2O8And the two cobalt electrodes are thin layers formed by metal material cobalt.
Preferably, the two cobalt electrodes and the molecular multiferroic material (NH) are4)3Cr2O8Along the z-axis direction as "cobalt electrode-molecule multiferroic material (NH)4)3Cr2O8-cobalt electrodes "arranged periodically and constituting a spin-filtering heterojunction device of three-dimensional periodic structure, wherein said molecular multiferroic material (NH)4)3Cr2O8Perpendicular to the line between the two cobalt electrodes and in contact with the source and drain electrodes.
More preferably, the molecular multiferroic material (NH) is4)3Cr2O8The thickness along the z-axis is on the order of nanometers.
Preferably, the spin filtering effect of the spin filtering heterojunction device is achieved by using the molecular multiferroic material (NH)4)3Cr2O8The magnetic center chromium ions are subjected to magnetoelectric coupling interaction, so that the oxygen surface of the molecular multiferroic material and the surface state of the cobalt electrode are hybridized to form a unique spin filtering effect.
The preparation method of the spin filtering heterojunction device based on the cobalt-molecular multiferroic material comprises the following steps:
(1) the cobalt surface is used as a source electrode and a drain electrode of the spin filtering heterojunction device;
(2) a molecular multiferroic material (NH) to constitute an intermediate scattering region between the source and the drain4)3Cr2O8The oxygen surface of the anode is contacted with the two cobalt electrodes to form an oxide layer;
(3) two cobalt electrodes and a molecular multiferroic material (NH)4)3Cr2O8Cobalt electrode-molecular multiferroic material (NH) in a manner to form a "sandwich structure4)3Cr2O8-cobalt electrodes "are periodically arranged in a manner to make a spin-polarized electric transport system of a two-electrode system;
(4) molecular multiferroic material (NH) in spin-polarized electrotransport systems4)3Cr2O8Holes for manufacturing the grid electrodes are reserved on the two sides of the substrate, and the grid electrodes are manufactured in the holes, so that the spin filtering heterojunction device based on the cobalt-molecular multiferroic material is obtained.
Preferably, the two cobalt electrodes and the middle scattering region are made of molecular multiferroic material (NH)4)3Cr2O8The thickness formed is on the order of nanometers.
The invention adopts magnetic material cobalt atoms as left and right electrodes, and adopts molecular multiferroic material (NH) in the middle4)3Cr2O8As a tunneling area, the electrode and the tunneling area are sequentially arranged along the z-axis direction to form a three-dimensional structure. In the dual-electrode spin-polarized electrotransport system, a molecular multiferroic material (NH)4)3Cr2O8The oxygen surface of the anode is in contact with the left and right cobalt electrodes. Due to molecular multiferroic material (NH)4)3Cr2O8Magnetic center chromium ion (Cr)5+) The spin interaction between the 3d orbitals, the coupling hybridization between the oxygen atoms of the molecular multiferroic material and the electrode surface formed by the cobalt atoms forms an interesting spin filtering effect. Wherein the length of the intermediate scattering region is kept in the order of nanometers. The left and right cobalt electrodes and the molecular multiferroic material (NH)4)3Cr2O8The three-dimensional periodic structure is satisfied in the x-axis and y-axis directions.
Compared with the prior artCompared with the prior art, the spin filtering heterojunction device based on the cobalt-molecular multiferroic material provided by the invention has the advantages that the working condition is at room temperature, and the preparation is easy. Due to molecular multiferroic material (NH)4)3Cr2O8Containing paramagnetic central chromium ions (Cr)5 +) The intermolecular neighboring Cr5+Magnetic exchange effect exists, and a spin polarization transport system with a double-electrode sandwich structure can be formed by combining the oxygen surface of the molecular multiferroic material and a cobalt electrode. The length of the electric transportation system is in the nanometer scale range. Due to molecular multiferroic material (NH)4)3Cr2O8The magnetic metal cobalt heterojunction is a three-dimensional periodic structure and is positioned between magnetic metal cobalt electrodes, and a molecular semiconductor heterojunction formed by the magnetic metal cobalt electrodes and the magnetic metal cobalt electrodes belongs to a non-equilibrium aperiodic system. The double-electrode spin polarization electric transport system can be solved by adopting an idea based on an unbalanced state green function method and a density functional theory, and further, the electric transport problem of a molecular multiferroic device is researched. Due to molecular multiferroic material (NH)4)3Cr2O8The unique magnetoelectric coupling effect and the spin interaction form a molecular electronic device with a spin filtering effect when in contact with the surface of the cobalt electrode.
Drawings
FIG. 1 is a schematic diagram of the structure of a spin-filtered heterojunction device of the present invention;
FIG. 2 is a diagram of a spin-filtering heterojunction device of the present invention as a molecular multiferroic material (NH)4)3Cr2O8A current-voltage relationship diagram when in a ferromagnetic state (ferromagnetic state);
FIG. 3 is a diagram of a spin-filtering heterojunction device of the present invention as a molecular multiferroic material (NH)4)3Cr2O8Current-voltage dependence in the ferrimagnetic state (ferrimagnetic state).
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
Example 1
As shown in fig. 1, a spin based cobalt-molecular multiferroic materialThe filtering heterojunction device comprises left and right electrodes made of magnetic metal cobalt as source and drain, and molecular multiferroic material (NH)4)3Cr2O8As an intermediate tunneling region. The left and right electrode materials are both magnetic metal cobalt, and the length of the left and right electrode materials is nano-scale molecular multiferroic material (NH)4)3Cr2O8And the double electrodes are sequentially arranged to form a sandwich structure. Molecular multiferroic material (NH)4)3Cr2O8Both sides are connected with the grid.
In the above spin polarization transport heterojunction transistor, the source and the drain are respectively constituted by ferromagnets that play the roles of a spin injection device and a spin induction device. The spin and the transport direction of electrons injected into the drain are consistent. The electrons are transported ballistically through the intermediate channel and when they reach the drain, their spin can be detected. When the electron spin passing through the middle channel is parallel to the magnetization direction of the drain, the system is in an Open (ON) state, and when the electron spin is antiparallel to the drain, the system is in an OFF (OFF) state. The gate (i.e., gate) functions to generate an effective magnetic field that is generated by the spin-orbit coupling of the substrate material, the structural confinement of the transport channel, or the static potential of the gate. This effective magnetic field can precess the electron spin. By adjusting the bias voltage, the precession can be influenced to cause the electron spin passing through the middle channel to be parallel or antiparallel to the drain electrode, so that the current can be effectively controlled.
The electrical conductance when the magnetization directions of the two ferromagnetic layers are the same is larger than the electrical conductance when the magnetization directions of the two ferromagnetic layers are opposite, which is called Tunneling Magnetoresistance (TMR), and can be defined as the following formula
Where conductance and resistance are labeled the relative magnetization directions of the two ferromagnetic layers (applying a small magnetic field of about 10 gauss to the system causes the relative magnetization directions of the two ferromagnetic layers to switch between ↓ and ↓ to ℃ ↓ to and ℃ ×). Structure of a spin filter device based on molecular multiferroic heterojunctions, spinThe polarization current flows in the z direction. The density matrix describing the electron distribution can be derived from a series of green's function matrices. The density matrix of the non-equilibrium state is a core part for calculating transport properties, and the relation between the Green function expression of the non-equilibrium state and the density matrix is established from the scattering state. Wave function psi of scattering statelStarting from the left electrode, the incident state of the unperturbed beam (marked l) is defined by the uncoupled semi-infinite electrode
A deferred green function is generated and used. Wherein the electronic state of the non-equilibrium situation starts from the deep energy of the electrodes and is charged to the electrochemical potential (μ) of the left and right electrodesL，μR) The density matrix is constructed from the states of the left and right electrodes. The electronic structure of the extended molecule (the molecule and a part of metal electrodes connected with the two ends of the molecule) is calculated based on a density functional theory method, and the surface Green function of the molecule is obtained on the level of the density functional. Potential distribution and voltage drop (voltage drop) of the molecular device are calculated based on an electron density self-consistent iteration method, and then the current-voltage curve, the transport spectrum and other spin polarized electron transport properties of the molecular device are solved by combining a non-equilibrium state Green's function method with a density functional theory method. For cobalt electrodes and molecular multiferroic materials (NH)4)3Cr2O8The moieties are sufficiently relaxed until the interatomic force is less than
A converged state is reached. The current is obtained by the following formula
Wherein f isL，R(E-μL)＝1/(1+e(E-μL,R)/κBT) represents the Fermi-Dirac distribution, μL,RRepresenting the chemical potentials of the left and right electrodes. T (E, V)b) At energy E and bias voltage VbThe transmission coefficient of (b).
FIG. 2 shows a molecular polypeptide of the present inventionIron material (NH)4)3Cr2O8Current-voltage dependence of the spin filter device in the ferromagnetic state (ferrimagnetic state). The graph shows that the voltage variation range is-2V, firstly, in the range of forward bias voltage 0-1V, along with the increase of voltage, the spin polarization upward current increases very slowly, the value is close to 0, and the spin downward current value is larger; within the range of 1-2V, the spin polarization upward current is increased to some extent, the spin downward current is relatively large in value, and certain oscillation is generated. In the bias voltage range of 0 to-2V, the spin-up current value is nearly equal to 0, while the spin-down current value is larger.
FIG. 3 shows a molecular multiferroic material (NH) according to the present invention4)3Cr2O8The current-voltage relationship of the spin filter device in the ferrimagnetic state (ferrimagnetic state). The voltage variation range shown in FIG. 3 is also-2 to 2V. First, for spin-up current: in the range of forward bias voltage 0-2V and 0-2V, along with the increase of the absolute value number of the voltage, the current increases very slowly, and the value approaches to 0; for spin-down electrons: within the range of 0-1V, the numerical value is steadily increased, within the range of 1-2V, the numerical value has certain oscillation, the voltage range is 1.25-1.5V, the current is reduced along with the increase of the voltage, and an interesting negative differential resistance effect is generated; in the range of 0 to-1V, the absolute value of the spin-up current continuously increases, and in the range of-1 to-2V bias voltage, the value of the current has certain oscillation.
From a review of FIGS. 2 and 3, it can be seen that the cobalt-molecular multiferroic material (NH) is based on either the ferromagnetic or ferrimagnetic state4)3Cr2O8In the spin filter device of the heterojunction, the spin-up current and the spin-down current generate obvious splitting, the spin filter effect with good performance is generated in the ranges of bias voltage of 0-1V and 0-1V, and the spin filter device of the molecular multiferroic material can be widely applied to molecular spin electronics devices.
The embodiments described above are described to facilitate an understanding and use of the invention by those skilled in the art. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above embodiments, and those skilled in the art should make improvements and modifications within the scope of the present invention based on the disclosure of the present invention.
Claims (6)
1. A spin filtering heterojunction device based on a cobalt-molecular multiferroic material is characterized by comprising two cobalt electrodes which are respectively used as a source electrode and a drain electrode, and a molecular multiferroic material (NH) which forms a thin layer of a material in a middle scattering region between the two cobalt electrodes4)3Cr2O8And a linker molecule multiferroic material (NH)4)3Cr2O8And the two cobalt electrodes are thin layers formed by metal material cobalt.
2. The device of claim 1, wherein the two cobalt electrodes, the molecular multiferroic material (NH), are configured as two cobalt electrodes4)3Cr2O8Along the z-axis direction as "cobalt electrode-molecule multiferroic material (NH)4)3Cr2O8-cobalt electrodes "arranged periodically and constituting a spin-filtering heterojunction device of three-dimensional periodic structure, wherein said molecular multiferroic material (NH)4)3Cr2O8Perpendicular to the line between the two cobalt electrodes and in contact with the source and drain electrodes.
3. The spin-filtered heterojunction device as claimed in claim 1 wherein said molecular multiferroic material (NH)4)3Cr2O8The thickness along the z-axis is on the order of nanometers.
4. A cobalt-based molecule according to claim 1The spin filtering heterojunction device of multiferroic material is characterized in that the spin filtering effect of the spin filtering heterojunction device utilizes the molecular multiferroic material (NH)4)3Cr2O8The magnetic center chromium ions are subjected to magnetoelectric coupling interaction, so that the oxygen surface of the molecular multiferroic material and the surface state of the cobalt electrode are hybridized to form a unique spin filtering effect.
5. The method for preparing a spin-filtering heterojunction device based on a cobalt-molecular multiferroic material as claimed in any one of claims 1 to 4, comprising the steps of:
(1) the cobalt surface is used as a source electrode and a drain electrode of the spin filtering heterojunction device;
(2) a molecular multiferroic material (NH) to constitute an intermediate scattering region between the source and the drain4)3Cr2O8The oxygen surface of the anode is contacted with the two cobalt electrodes to form an oxide layer;
(3) two cobalt electrodes and a molecular multiferroic material (NH)4)3Cr2O8Cobalt electrode-molecular multiferroic material (NH) in a manner to form a "sandwich structure4)3Cr2O8-cobalt electrodes "are periodically arranged in a manner to make a spin-polarized electric transport system of a two-electrode system;
(4) molecular multiferroic material (NH) in spin-polarized electrotransport systems4)3Cr2O8Holes for manufacturing the grid electrodes are reserved on the two sides of the substrate, and the grid electrodes are manufactured in the holes, so that the spin filtering heterojunction device based on the cobalt-molecular multiferroic material is obtained.
6. The method of claim 5, wherein the two cobalt electrodes and the intermediate scattering region molecular multiferroic material (NH) are formed by a spin-filtering heterojunction device based on cobalt-molecular multiferroic material4)3Cr2O8The thickness formed is on the order of nanometers.
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| Title |
|---|
| 《First-principles study on the dielectric and transport properties of the LiNbO3-type CdPbO3》;Jing Zhang,San Huang Ke,Derwyn A. Rowlands;《International Journal of Modern Physics B》;20161213;全文 * |
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| Publication number | Publication date |
|---|---|
| CN108206204A (en) | 2018-06-26 |
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