CN108198867A - A kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes - Google Patents
A kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes Download PDFInfo
- Publication number
- CN108198867A CN108198867A CN201711473088.9A CN201711473088A CN108198867A CN 108198867 A CN108198867 A CN 108198867A CN 201711473088 A CN201711473088 A CN 201711473088A CN 108198867 A CN108198867 A CN 108198867A
- Authority
- CN
- China
- Prior art keywords
- layer
- gan
- algan
- barrier
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 72
- 238000000926 separation method Methods 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 238000002161 passivation Methods 0.000 claims abstract description 24
- 230000000694 effects Effects 0.000 claims description 20
- 230000005684 electric field Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005036 potential barrier Methods 0.000 claims description 13
- 230000010287 polarization Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 8
- 229910000238 buergerite Inorganic materials 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000002269 spontaneous effect Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
The present invention relates to a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes.The present invention includes GaN base bottom, n+GaN collector layers, the first separation layers of i GaN, the first barrier layers of i AlGaN, i GaN quantum well layers, the second barrier layers of i AlGaN, the second separation layers of i GaN or i InGaN, n+GaN emitter layers, AlN passivation layers, collecting zone metal electrode pin and emitter region metal electrode pin.The present invention is non-using high qualityThe resonance tunnel-through diode that on the intrinsic GaN base bottom of extension of polarity upper surface prepared by epitaxial growth GaN/AlGaN nano thin-films.With apparent enough and practical negative differential resistance C-V characteristic, there is relatively low peak point current and valley point current under sufficiently low positive bias, power consumption is relatively low.
Description
Technical field
The present invention relates to compound semiconductor quantum device technical field, specifically a kind of low-power consumption GaN/AlGaN resonance
Tunnel-through diode.
Background technology
For conventional GaN/AlGaN resonance tunnel-through diodes (RTD) device, due to the spontaneous pole of GaN/AlGaN barrier layers
Change effect and applied voltage effect under piezoelectric polarization effect it is notable, polarized electric field will be formed in GaN/AlGaN barrier layers.
Due to being restricted by the factors such as GaN/AlGaN materials immanent structure and its surface epitaxial growth dynamics, c is given birth to towards extension
Length, epitaxial growth high-quality GaN/AlGaN nano thin-films, initial polarity face are identical with end of a period polar surface.If on GaN base bottom
Surface is c faces, i.e. Ga surface polarities, then the polarized electric field direction in AlGaN potential barrier is identical with device extra electric field direction, meeting
Enhance the resonance tunneling effect of RTD devices, be conducive to obtain stronger negative differential electricity under the conditions of non-polarized effect than barrier layer
(NDR) C-V characteristic is hindered, i.e., with higher peak value/valley point current density, thus the power consumption of device is higher；And if GaN base
Bottom upper surface isFace, i.e. N surface polarities, then the polarized electric field direction in AlGaN potential barrier and device extra electric field direction phase
Instead, it can inhibit and destroy the resonance tunneling effect of RTD devices, it significantly can practical negative differential resistance (NDR) volt-ampere it is difficult to obtain
Characteristic.So conventional GaN/AlGaN resonance tunnel-through diodes (RTD) device generally use upper surface is the GaN base bottom in c faces.
The present invention grows N surface polarity high quality buergerite GaN materials using molecular beam epitaxy (MBE), through once chamferring
It obtains non-Face GaN base bottom deposits (MOCVD) epitaxial growth N using Metalorganic Chemical Vapor on miscut substrate
Upper surface polarity high quality buergerite GaN material, it is non-through chamferring gained againFace GaN base bottom；It is as shown in Figure 1 fibre
Zinc ore four forms the three dimensions of four characterization, gained with a1, a2, a3 and c-axis for four reference axis
It is non-The initial crystal orientation range at face GaN base bottom falls closed interval in the three dimensions characterized in the fourDirection scope ultrasonic gas flow detection module or according to equivalent corresponding to lattice symmetry
In the range of crystal orientation, n is etched by follow-up MBE or MOCVD successively epitaxial growth+-GaN、i-GaN、i-AlGaN、i-GaN、
I-AlGaN, i-GaN, AlN and metal nanometer thin film prepare a kind of low-power consumption GaN/AlGaN base resonance tunnel-through diodes.
Invention content
The purpose of the present invention is to provide a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes.
The present invention includes substrate, collector layer, the first separation layer, the first barrier layer, quantum well layer, the second barrier layer, second
Separation layer, emitter layer, passivation layer, collecting zone metal electrode pin and emitter region metal electrode pin.The upper surface of substrate
Extension collector layer, the first separation layer of collector layer upper surface middle part extension, the first barrier layer, quantum well layer, the second barrier layer,
Two separation layers and emitter layer；First separation layer, the first barrier layer, quantum well layer, the second barrier layer, the second separation layer and emitter region
Layer forms the central quantum structure region of resonance tunnel-through diode.Central quantum structure region upper surface is drawn for emitter region metal electrode
Foot, central quantum structure areas outside deposition have passivation layer, are collecting zone metal electrode pin on the outside of passivation layer.Substrate uses upper table
Face crystal face is respectively in buergerite four Or the intrinsic GaN base bottom of extension of the high quality mixing polarity upper surface in a faces.
Substrate is thickness 102-103μm GaN layer, collector layer 10-2-100The n of μ m-thick+GaN layer, the first separation layer
It is 100-101I-GaN layers, the first barrier layer of nm thickness are that i-AlGaN layers, the quantum well layer of 1.5-5nm thickness are 1.5-7nm thick
I-GaN layers, the i-AlGaN layers that the second barrier layer is 1.5-5nm thickness, the second separation layer be 0-101The i-GaN or i- of nm thickness
InGaN layer, emitter layer 10-2-100The n of μ m-thick+GaN layer, passivation layer 101The AlN layers of nm thickness.N in collector layer+-
GaN doping concentrations are 1e18-1e19cm-3。
Using GaN base bottom as component carrier, play and determine in device layer epitaxially grown direction, supporting device layer, device layer
The effects that device in isolation and back work between device radiates；
Ohmic contact is formed between collector layer upper surface perimeter and collecting zone metal electrode, rises and collects and transmission the
The electron stream effect of one separation layer；It is semi-insulating then as the first separation layer polarity upper surface to be mixed with high quality in terms of calorifics
Heat transfer medium between GaN base bottom and collecting zone metal electrode pin；
First separation layer connects collector layer and the first barrier layer on device architecture, predominantly across the first barrier layer
Electronics offer is led to the transport path of collector layer, as the heat transfer path between collector layer and the first barrier layer and is isolated
Influence of the quantum level to the first barrier layer both sides quantum level relationship, formation and Quantum Well under applying bias in collector layer
In layer the effects that corresponding resonance quantum level；
The first separation layer and quantum well layer is isolated in first barrier layer in structure, as the first separation layer and quantum well layer it
Between nanometer grade thickness have limit for height potential barrier, i.e., the path of electronics quantizing resonance tunnelling between the first separation layer and quantum well layer；
Quantum well layer carries between the first separation layer and the second barrier layer as the limited deep electronics potential well of nanometer grade thickness
For along the longitudinal quantized electron energy level of energy；
Quantum well layer and the second separation layer is isolated in second barrier layer in structure, as quantum well layer and the second separation layer it
Between nanometer grade thickness have limit for height potential barrier, i.e., the path of electronics quantizing resonance tunnelling between quantum well layer and the second separation layer；
Second separation layer connects the second barrier layer and emitter layer on device architecture, and dominant transport is from emitter layer
As the heat transfer path between the second barrier layer and emitter layer, quantum level is isolated in emitter layer to the second gesture in electronics
The influence of barrier layer both sides quantum level relationship forms resonance quantum level corresponding with quantum well layer under applying bias；
Ohmic contact, the second separation layer of connection and emitter region gold are formed between emitter layer and emitter region metal electrode pin
Belong to electrode pin, as the low impedance path of electron stream and Heat transmission road between the second separation layer and emitter region metal electrode pin
Diameter；
Ohmic contact, interface unit collecting zone and external circuit are formed between collecting zone metal electrode pin and collecting zone；
The surface of device is needed to protect between part and external environment by passivation layer to be kept apart, and passivated surface dangling bonds.
The passivation layer, collecting zone metal electrode pin and emitter region metal electrode pin form three concentric circles or
Concentric regular polygon.
The emitter layer of the central quantum structure area periphery, the second separation layer, the second barrier layer, quantum well layer,
First barrier layer and the first separation layer are using photoetching process successively mask.
The passivation layer is deposited on central quantum structure areas outside；And use photoetching process mask.
The collecting zone metal electrode pin and emitter region metal electrode pin upper surface are using chemically mechanical polishing work
Skill planarizes.
Polarized electric field direction and additional polarized electric field direction in the barrier layer is misaligned, does not also overlap reversely, two
There are an angles between person, are represented with α, referred to as effective polarizing angle, then the effective poling electric field in AlGaN potential barrier meets formula
(1) law of monocular projection shown in：
K is Boltzmann constant, ε0For permittivity of vacuum, εrFor relative dielectric constant, PSPFor spontaneous polarization strength, PPZ
For piezoelectric polarization intensity, q is electronic charge size.
In view of the deficiencies of the prior art, the present invention provides a kind of non-using high qualityThe extension sheet of polarity upper surface
Levy the GaN/AlGaN resonance tunnel-through diodes that on GaN base bottom prepared by epitaxial growth GaN/AlGaN nano thin-films.The resonance tunnel-through
Diode can have apparent enough and can be practical negative differential resistance (NDR) C-V characteristic, and its C-V characteristic is sufficiently low
Positive bias under the peak point current that has of negative differential resistance characteristic and valley point current than conventional c to initial upper surface GaN base bottom
GaN/AlGaN resonance tunnel-through diodes peak point current it is lower with valley point current, so as to which power consumption in practical applications is relatively low,
Be conducive to save the energy, environmental protection and sustainable development.Realize GaN/AlGaN resonance tunnel-through diode internal polarization electric fields
The stripping in direction and extra electric field direction so that the angle between the direction of the latter and the former direction or negative direction is fallen
(74 °, 90 °] section so that the absolute value of component of the polarized electric field on the latter direction be reduced to decompose before it is absolute
Hereinafter, so that when the direction of its component is opposite with extra electric field direction, component intensity is not enough to break completely the 28% of value
The resonance tunnel-through condition of bad GaN/AlGaN RTD, but resonance tunneling effect can only be weakened to a certain extent, so as to contribute to
Obtaining has relatively low characteristic current under low voltage, and the GaN/AlGaN resonance tunnel-through diodes with certain practicability.
Description of the drawings
Fig. 1 is buergerite four；
Fig. 2 is the overall structure diagram of the present invention；
The optional overlooking the structure diagram of Fig. 3 present invention；
Fig. 4 is the structure diagram of the embodiment of the present invention.
Specific embodiment
If attached drawing 2 shows, a kind of low-power consumption GaN/AlGaN base resonance tunnel-through diodes, including substrate 1, collector layer 2,
One separation layer 3, the first barrier layer 4, quantum well layer 5, the second barrier layer 6, the second separation layer 7, emitter layer 8, passivation layer 9 and collection
Electric area's metal electrode pin 10 and emitter region metal electrode pin 11.1 upper surface extension collector layer 2 of substrate, on collector layer 2
Surface middle part extension the first separation layer 3, the first barrier layer 4, quantum well layer 5, the second barrier layer 6, the second separation layer 7 and emitter region
Layer 8；First separation layer 3, the first barrier layer 4, quantum well layer 5, the second barrier layer 6, the second separation layer 7 and emitter layer 8 are formed
The central quantum structure region of resonance tunnel-through diode.Central quantum structure region upper surface is emitter region metal electrode pin
11, central quantum structure areas outside deposition has passivation layer 9, and 9 outside of passivation layer is collecting zone metal electrode pin 10.
Substrate 1 is respectively in buergerite four space shown in respective figure 1 using upper surface crystal faceOr a faces
The intrinsic GaN base bottom of the extension of high quality mixing polarity upper surface.
Substrate 1 is thickness 102-103μm GaN layer, collector layer 2 be 10-2-100The n of μ m-thick+GaN layer, the first isolation
Layer 3 is 1-101The i-GaN layers of nm thickness, i-AlGaN layers, the quantum well layer 5 that the first barrier layer 4 is 1.5-5nm thickness are 1.5-7nm
I-GaN, the second barrier layer 6 of thickness are the i-AlGaN layers of 1.5-5nm thickness, the second separation layer 7 is 0-101The i-GaN of nm thickness or
I-InGaN layers, emitter layer 8 be 10-2-100The n of μ m-thick+GaN layer, passivation layer 9 are 101The AlN layers of nm thickness.
Using GaN base bottom as component carrier, play and determine in device layer epitaxially grown direction, supporting device layer, device layer
The effects that device in isolation and back work between device radiates；N+-GaN doping concentrations are 1e in collector layer18-
1e19cm-3, Ohmic contact is formed between surface external region and collecting zone metal electrode thereon, rises to collect and be isolated with transmission first
The electron stream effect of layer；Polarity upper surface semi-insulating GaN substrate is then mixed with high quality as the first separation layer in terms of calorifics
And the heat transfer medium between collecting zone metal electrode pin；
First separation layer connects collector layer and the first barrier layer on device architecture, predominantly across the first barrier layer
Electronics offer is led to the transport path of collector layer, as the heat transfer path between collector layer and the first barrier layer and is isolated
Influence of the quantum level to the first barrier layer both sides quantum level relationship, formation and Quantum Well under applying bias in collector layer
In layer the effects that corresponding resonance quantum level；
The first separation layer and quantum well layer is isolated in first barrier layer in structure, as the first separation layer and quantum well layer it
Between nanometer grade thickness have limit for height potential barrier, i.e., the path of electronics quantizing resonance tunnelling between the first separation layer and quantum well layer；
Quantum well layer carries between the first separation layer and the second barrier layer as the limited deep electronics potential well of nanometer grade thickness
For along the longitudinal quantized electron energy level of energy；
Quantum well layer and the second separation layer is isolated in second barrier layer in structure, as quantum well layer and the second separation layer it
Between nanometer grade thickness have limit for height potential barrier, i.e., the path of electronics quantizing resonance tunnelling between quantum well layer and the second separation layer；
Second separation layer connects the second barrier layer and emitter layer on device architecture, and dominant transport is from emitter layer
As the heat transfer path between the second barrier layer and emitter layer, quantum level is isolated in emitter layer to the second gesture in electronics
The influence of barrier layer both sides quantum level relationship forms resonance quantum level corresponding with quantum well layer under applying bias；
Ohmic contact, the second separation layer of connection and emitter region gold are formed between emitter layer and emitter region metal electrode pin
Belong to electrode pin, as the low impedance path of electron stream and Heat transmission road between the second separation layer and emitter region metal electrode pin
Diameter.
Ohmic contact, interface unit collecting zone and external circuit are formed between collecting zone metal electrode pin and collecting zone.
The surface of device is needed to protect between part and external environment by passivation layer to be kept apart, and passivated surface dangling bonds.
As shown in figure 3, passivation layer, current collection in a kind of plan structure of low-power consumption GaN/AlGaN base resonance tunnel-through diodes
Area's metal electrode pin and emitter region metal electrode pin are three concentric circles or concentric regular polygon.
As shown in figure 4, it is in TCAD techniques in the present embodiment by a kind of low-power consumption GaN/AlGaN bases resonance tunnel-through diode
Virtual sample in emulation.In thickness 102-103μm extension intrinsic base upper surface extension 62nm thickness collector layer；Outside
Prolong collector layer upper surface middle part successively the first separation layer of extension 5nm thickness, the first barrier layer of 2nm thickness, 2nm thickness Quantum Well
Layer, the second separation layer of the second barrier layer of 2nm thickness, 5nm thickness and the emitter layer of 62nm thickness；Then using retaining GaN/
AlGaN base resonance tunnel-through diodes center quantum structure region (i.e. the first separation layer, the first barrier layer, quantum well layer, the second gesture
The region of barrier layer, the second separation layer and emitter layer) mask plate mask (i.e. first time mask), using photoetching process (i.e.
Photoetching) by the emitter layer of GaN/AlGaN resonance tunnel-through diodes center quantum structure area periphery, the second separation layer,
Second barrier layer, quantum well layer, the first barrier layer and the first separation layer are sequentially etched removal, clean drying；Later in collecting zone
Layer upper face center quantum structure areas outside deposits the passivation layer of one layer of 20nm thickness；Then passivation layer mask plate mask is used
(i.e. second of mask), using photoetching process (i.e. second of photoetching) by GaN/AlGaN resonance tunnel-through diodes center Quantum Junction
The passivation layer on structure region side walls surface retains, and drying is cleaned in the passivation layer etching removal in other regions；Then outside collector layer
The collecting zone metal electrode pin of outgrowth 300nm thickness and the emitter region metal electricity in emitter layer upper surface extension 300nm thickness
Pole pin, and planarized GaN/AlGaN resonance tunnel-through diode units upper surface using CMP (chemically mechanical polishing) techniques.
When applying forward bias between the collector and emitter in GaN/AlGaN base resonance tunnel-through diodes
During voltage, there are spontaneous polarization effect in GaN layer, spontaneous polarization effect and piezoelectric polarization effect are existed simultaneously in AlGaN layer
It should.Since GaN/AlGaN resonance tunnel-through diodes are respectively corresponded in buergerite four using upper surface in the present invention Or the intrinsic GaN base of extension of the high quality mixing polarity initial upper surface in a faces
Bottom.According to epitaxial growth dynamic law, under the conditions of epitaxial growth technology is stablized, the high preferred orientation in epitaxial layer end of a period face depends on
In the upper surface high preferred orientation of initial substrate material, i.e., using substrate as seeding, after the upper surface high preferred orientation guiding of substrate
Continuous epitaxial layer along identical high preferred orientation epitaxial growth, and the surface charge that polarizes then remain at c faces andFace, so, AlGaN gesture
Polarized electric field direction and additional polarized electric field direction in barrier layer is misaligned, does not also overlap reversely, and there are a folders therebetween
Angle represents that referred to as effective polarizing angle, the then projection that the effective poling electric field in AlGaN potential barrier meets shown in formula (1) is determined with α
Rule：
Wherein, k is Boltzmann constant, ε0For permittivity of vacuum, εrFor relative dielectric constant, PSPIt is strong for spontaneous polarization
Degree, PPZFor piezoelectric polarization intensity, q is electronic charge size.
The one-dimensional stationary state Schrodinger equation of function will be become formula (2) from standard one-dimensional stationary state Schrodinger equation：
Wherein, tB1With tB2It is the thickness of the first barrier layer and the second barrier layer respectively.
Formula (1) and (2) are as it can be seen that originally due to GaN/AlGaN edgesTo strong polarity effect destroy or along c to quilt
The GaN/AlGaN base resonance tunnel-through diode negative differential resistance characteristics of enhancing are able to as α is from the gradual increase between 0 ° -90 °
And restore gradually or alleviate.
Increase with angle of entry α, effective poling electric field will reduce, so as to which polarized electric field is for the resonance tunnel of resonance tunnel-through diode
The rejection ability for wearing characteristic weakens.When the rejection ability of this Properties of Resonant Tunneling for resonance tunnel-through diode is attenuated to one
When determining degree, such as when the initial crystal face of substrate reachesOrWhen, which opens
Begin there can be apparent enough and can be practical negative differential resistance, and negative differential of its C-V characteristic under sufficiently low positive bias
Peak point current that resistance characteristic has and valley point current are than conventional c to initial upper surface GaN base bottom GaN/AlGaN base resonance tunnel-throughs
The peak point current of diode is lower with valley point current, so as to which power consumption in practical applications is relatively low.It, should if angle α continues to increase
NDR C-V characteristics can become more apparent upon possessed by resonance tunnel-through diode, but its crest voltage, valley point voltage, peak value are electric
Stream and valley will continue to increase.
Claims (7)
1. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes, including substrate, collector layer, the first separation layer, the first potential barrier
Layer, quantum well layer, the second barrier layer, the second separation layer, emitter layer, passivation layer, collecting zone metal electrode pin and emitter region
Metal electrode pin；It is characterized in that：The upper surface of substrate extension collector layer, collector layer upper surface middle part extension
One separation layer, the first barrier layer, quantum well layer, the second barrier layer, the second separation layer and emitter layer；First separation layer, first
Barrier layer, quantum well layer, the second barrier layer, the second separation layer and emitter layer form the central Quantum Junction of resonance tunnel-through diode
Structure region；Central quantum structure region upper surface is emitter region metal electrode pin, and central quantum structure areas outside deposition has
Passivation layer, passivation layer outside are collecting zone metal electrode pin；Substrate is respectively four axial coordinate of buergerite using upper surface crystal face
In system Or a faces
High quality mixing polarity upper surface the intrinsic GaN base bottom of extension；
Substrate is thickness 102-103μm GaN layer, collector layer 10-2-100The n of μ m-thick+GaN layer, the first separation layer are 100-
101I-GaN layers, the first barrier layer of nm thickness are the i-AlGaN layers of 1.5-5nm thickness, the i-GaN that quantum well layer is 1.5-7nm thickness
Layer, the i-AlGaN layers that the second barrier layer is 1.5-5nm thickness, the second separation layer are 0-101The i-GaN or i-InGaN of nm thickness
Layer, emitter layer 10-2-100The n of μ m-thick+GaN layer, passivation layer 101The AlN layers of nm thickness；
Using GaN base bottom as component carrier, play and determine device in device layer epitaxially grown direction, supporting device layer, device layer
Between isolation and back work in device heat dissipation the effects that；
Form Ohmic contact between collector layer upper surface perimeter and collecting zone metal electrode, rise collect with transmission first every
The electron stream effect of absciss layer；Polarity upper surface semi-insulating GaN base is then mixed with high quality as the first separation layer in terms of calorifics
Heat transfer medium between bottom and collecting zone metal electrode pin；
First separation layer connects collector layer and the first barrier layer, the predominantly electronics across the first barrier layer on device architecture
It provides and leads to the transport path of collector layer, as the heat transfer path between collector layer and the first barrier layer and current collection is isolated
Influence of the quantum level to the first barrier layer both sides quantum level relationship in region layer, formed under applying bias in quantum well layer
The effects that corresponding resonance quantum level；
The first separation layer and quantum well layer is isolated in first barrier layer in structure, as between the first separation layer and quantum well layer
Nanometer grade thickness has limit for height potential barrier, i.e., the path of electronics quantizing resonance tunnelling between the first separation layer and quantum well layer；
Quantum well layer provides edge between the first separation layer and the second barrier layer, as the limited deep electronics potential well of nanometer grade thickness
The longitudinal quantized electron energy level of energy；
Quantum well layer and the second separation layer is isolated in second barrier layer in structure, as between quantum well layer and the second separation layer
Nanometer grade thickness has limit for height potential barrier, i.e., the path of electronics quantizing resonance tunnelling between quantum well layer and the second separation layer；
Second separation layer connects the second barrier layer and emitter layer, electricity of the dominant transport from emitter layer on device architecture
As the heat transfer path between the second barrier layer and emitter layer, quantum level is isolated in emitter layer to the second potential barrier in son
The influence of layer both sides quantum level relationship forms resonance quantum level corresponding with quantum well layer under applying bias；
Ohmic contact, the second separation layer of connection and emitter region metal electricity are formed between emitter layer and emitter region metal electrode pin
Pole pin, as the low impedance path of electron stream and heat transfer path between the second separation layer and emitter region metal electrode pin；
Ohmic contact, interface unit collecting zone and external circuit are formed between collecting zone metal electrode pin and collecting zone；Passivation
The surface of device is needed to protect between part and external environment by layer to be kept apart, and passivated surface dangling bonds.
2. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes as described in claim 1, it is characterised in that：The passivation
Layer, collecting zone metal electrode pin and emitter region metal electrode pin form three concentric circles or concentric regular polygon.
3. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes as described in claim 1, it is characterised in that：In described
Entreat emitter layer, the second separation layer, the second barrier layer, quantum well layer, the first barrier layer and first of quantum structure area periphery
Separation layer is using photoetching process successively mask.
4. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes as described in claim 1, it is characterised in that：Described is blunt
Change layer and be deposited on central quantum structure areas outside；And use photoetching process mask.
5. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes as described in claim 1, it is characterised in that：The collection
Electric area's metal electrode pin and emitter region metal electrode pin upper surface are planarized using CMP process.
6. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes as described in claim 1, it is characterised in that：The gesture
Polarized electric field direction and additional polarized electric field direction in barrier layer is misaligned, does not also overlap reversely, and there are a folders therebetween
Angle represents that referred to as effective polarizing angle, the then projection that the effective poling electric field in AlGaN potential barrier meets shown in formula (1) is determined with α
Rule：
K is Boltzmann constant, ε0For permittivity of vacuum, εrFor relative dielectric constant, PSPFor spontaneous polarization strength, PPZFor pressure
Electric polarization, q are electronic charge sizes.
7. a kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes as described in claim 1, it is characterised in that：The collection
N in electric region layer+- GaN doping concentrations are 1e18-1e19cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711473088.9A CN108198867B (en) | 2017-12-29 | 2017-12-29 | Low-power-consumption GaN/AlGaN resonant tunneling diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711473088.9A CN108198867B (en) | 2017-12-29 | 2017-12-29 | Low-power-consumption GaN/AlGaN resonant tunneling diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108198867A true CN108198867A (en) | 2018-06-22 |
| CN108198867B CN108198867B (en) | 2021-04-20 |
Family
ID=62586418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711473088.9A Active CN108198867B (en) | 2017-12-29 | 2017-12-29 | Low-power-consumption GaN/AlGaN resonant tunneling diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108198867B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545861A (en) * | 2018-10-30 | 2019-03-29 | 杭州电子科技大学 | A kind of multi resonant GaN/AlGaN resonance tunnel-through diode |
| CN113097313A (en) * | 2021-03-29 | 2021-07-09 | 西安电子科技大学 | YAlN/GaN double-barrier resonance tunneling diode with InGaN sub-well structure and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| CN101515700A (en) * | 2008-02-22 | 2009-08-26 | 住友电气工业株式会社 | Group-iii nitride light-emitting device and method for manufacturing group-iii nitride based semiconductor light-emitting device |
| CN201673911U (en) * | 2010-06-13 | 2010-12-15 | 杭州汉安半导体有限公司 | High-power and high-frequency thyristor |
| CN102820211A (en) * | 2012-08-29 | 2012-12-12 | 中国科学院半导体研究所 | Non-polar A-plane GaN film preparation method |
| CN106057915A (en) * | 2016-08-08 | 2016-10-26 | 西安电子科技大学 | RTD diode of indium gallium nitride emitting electrode ohmic contact layer and manufacturing method thereof |
-
2017
- 2017-12-29 CN CN201711473088.9A patent/CN108198867B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
| CN101515700A (en) * | 2008-02-22 | 2009-08-26 | 住友电气工业株式会社 | Group-iii nitride light-emitting device and method for manufacturing group-iii nitride based semiconductor light-emitting device |
| CN201673911U (en) * | 2010-06-13 | 2010-12-15 | 杭州汉安半导体有限公司 | High-power and high-frequency thyristor |
| CN102820211A (en) * | 2012-08-29 | 2012-12-12 | 中国科学院半导体研究所 | Non-polar A-plane GaN film preparation method |
| CN106057915A (en) * | 2016-08-08 | 2016-10-26 | 西安电子科技大学 | RTD diode of indium gallium nitride emitting electrode ohmic contact layer and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545861A (en) * | 2018-10-30 | 2019-03-29 | 杭州电子科技大学 | A kind of multi resonant GaN/AlGaN resonance tunnel-through diode |
| CN109545861B (en) * | 2018-10-30 | 2022-04-01 | 杭州电子科技大学 | Multi-harmonic GaN/AlGaN resonant tunneling diode |
| CN113097313A (en) * | 2021-03-29 | 2021-07-09 | 西安电子科技大学 | YAlN/GaN double-barrier resonance tunneling diode with InGaN sub-well structure and manufacturing method thereof |
| CN113097313B (en) * | 2021-03-29 | 2022-12-09 | 西安电子科技大学 | YAlN/GaN double-barrier resonance tunneling diode with InGaN sub-well structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108198867B (en) | 2021-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4022708B2 (en) | Semiconductor device | |
| US8648354B2 (en) | Electronic field effect devices and methods for their manufacture | |
| CN110326115B (en) | Schottky barrier diode | |
| JPWO2006001369A1 (en) | Semiconductor device | |
| KR20160101897A (en) | Low sheet resistance gan channel on si substrates using inaln and algan bi-layer capping stack | |
| JP2011238931A (en) | Enhancement mode field effect device and method of manufacturing the same | |
| US10418495B2 (en) | Gallium nitride-based sensor having heater structure and method of manufacturing the same | |
| CN104126223A (en) | Semiconductor element and method for manufacturing semiconductor element | |
| US20130200387A1 (en) | Nitride based heterojunction semiconductor device and manufacturing method thereof | |
| US20190341479A1 (en) | Nitride semiconductor epitaxial stack structure and power device thereof | |
| JP5792922B2 (en) | Schottky barrier diode and manufacturing method thereof | |
| TWI528589B (en) | Group III nitride semiconductor element and method of manufacturing the same | |
| CN108198867A (en) | A kind of low-power consumption GaN/AlGaN resonance tunnel-through diodes | |
| JP5299208B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN108183136B (en) | Novel voltage domain oscillation diode | |
| Liu et al. | Demonstration of n-Ga 2 O 3/p-GaN diodes by wet-etching lift-off and transfer-print technique | |
| JP5158470B2 (en) | Manufacturing method of nitride semiconductor device | |
| CN109545861A (en) | A kind of multi resonant GaN/AlGaN resonance tunnel-through diode | |
| Juang et al. | Transport in a gated Al 0.18 Ga 0.82 N/GaN electron system | |
| JP6313809B2 (en) | Semiconductor device | |
| WO2023167709A2 (en) | Semiconductor heterostructures with scandium iii-nitride layer | |
| TWI662700B (en) | Semiconductor cell | |
| CN110265485B (en) | Transverse transistor with Schottky barrier AlGaN/GaN heterojunction and manufacturing method thereof | |
| CN114023640A (en) | Method for preparing N-polar GaN based on CMP, N-polar GaN and application thereof | |
| JP6874572B2 (en) | Electronic devices and manufacturing methods for electronic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230719 Address after: B205, No.179 Chezhan Road, Liushi Town, Leqing City, Wenzhou City, Zhejiang Province, 325600 Patentee after: Zhipu Qiwang (Wenzhou) Electric Power Technology Research Institute Co.,Ltd. Address before: 310018 No. 2 street, Xiasha Higher Education Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU DIANZI University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230801 Address after: 325600 no.428, Jingba Road, Yueqing Economic Development Zone, Yueqing City, Wenzhou City, Zhejiang Province Patentee after: ZHEJIANG LIUJING RECTIFIER CO.,LTD. Address before: B205, No.179 Chezhan Road, Liushi Town, Leqing City, Wenzhou City, Zhejiang Province, 325600 Patentee before: Zhipu Qiwang (Wenzhou) Electric Power Technology Research Institute Co.,Ltd. |
|
| TR01 | Transfer of patent right |