CN108188598A - Quasi-molecule laser annealing equipment - Google Patents
Quasi-molecule laser annealing equipment Download PDFInfo
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- CN108188598A CN108188598A CN201711449637.9A CN201711449637A CN108188598A CN 108188598 A CN108188598 A CN 108188598A CN 201711449637 A CN201711449637 A CN 201711449637A CN 108188598 A CN108188598 A CN 108188598A
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- Prior art keywords
- film layer
- substrate
- laser
- quasi
- reflectance coating
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000011248 coating agent Substances 0.000 claims abstract description 48
- 238000000576 coating method Methods 0.000 claims abstract description 48
- 239000010408 film Substances 0.000 claims description 100
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 5
- 241000931526 Acer campestre Species 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000011514 reflex Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 241000588731 Hafnia Species 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/703—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention provides a kind of quasi-molecule laser annealing equipment, for carrying out laser annealing to substrate, including line customer, focusing lens and laser, line customer is set between substrate and laser, focusing lens are between line customer and laser, and in the light path of the laser beam irradiation substrate of laser, the focus of focusing lens is in the light path of the laser beam directive substrate of laser and on substrate, line customer is equipped with the reflection cavity connected through chamber and with through chamber through line customer, reflection cavity includes the surface equipped with reflectance coating, the surface of reflection cavity is towards substrate, the laser beam that laser generates is passed through after being focused on by focusing lens through chamber directive substrate, laser beam after focusing is reflexed to reflectance coating by substrate, again substrate is reflected back into through reflectance coating.The quasi-molecule laser annealing equipment of the present invention solves the technical issues of line customer temperature raising.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of quasi-molecule laser annealing equipment.
Background technology
Quasi-molecule laser annealing (ELA) technology extensive utilization to semicon industry.Existing ELA equipment processing procedure is usual
For laser beam after optics into focus with inclination angle by being irradiated on silicon substrate, and a laser beam part is absorbed by silicon, one
Divide and be reflected on line customer by silicon fiml.And line customer almost all is absorbed by the energy of reflected light, and luminous energy is turned
Thermal energy is turned to, the utilization rate in turn resulting in energy is not high and the temperature of line customer can be caused to increase, so as to influence quasi-molecule
The service life of laser annealing apparatus.
Invention content
The purpose of the present invention is to provide a kind of quasi-molecule laser annealings, solve the raised technology of line customer temperature
Problem.
The present invention provides a kind of quasi-molecule laser annealing equipment, for carrying out laser annealing to substrate, is consumed including line
Device, focusing lens and laser, the line customer are set between the substrate and the laser, the focusing lens
Between the line customer and the laser, and the light of the laser beam irradiation substrate positioned at the laser
On the road, in the light path of substrate and positioned at described described in the laser beam directive of the focus of the focusing lens in the laser
On substrate, the line customer be equipped with through the line customer through chamber and with it is described connect through chamber it is anti-
Chamber is penetrated, the reflection cavity includes the surface equipped with reflectance coating, the laser that the surface is generated towards the substrate, the laser
Beam passes through described through substrate described in chamber directive after being focused on by the focusing lens, the substrate is by the laser after focusing
Beam reflexes to the reflectance coating, then is reflected back into the substrate through the reflectance coating.
Wherein, the surface of the reflection cavity includes circular arc camber, and the reflectance coating is arc film, and the reflectance coating fits in
The circular arc camber, described in the laser beam directive of the center of the circular arc camber in the laser in the light path of substrate simultaneously
On the substrate.
Wherein, the reflectance coating includes the first film layer and the second film layer of intersecting setting, and described first thin
Film layer is located at the outermost layer and innermost layer of the reflectance coating, and the first film layer has first refractive index, second film
Layer has the second refractive index, and the first refractive index is more than second refractive index.
Wherein, the first film layer is equal with the thickness of second film layer.
Wherein, the first film layer and the thickness of second film layer are the whole of the optical maser wavelength a quarter
Several times.
Wherein, the first film layer include silicon nitride film layer, titanium deoxid film layer, five oxidation two tantalum film layer,
Zirconia film layer, lanthanium titanate film layer, hafnia film layer and zinc selenide film layer.
Wherein, second film layer includes magnesium fluoride film layer, silicon oxide film layer, aluminum oxide film layer and titanium nitride
Film layer.
Wherein, the quasi-molecule laser annealing equipment includes energy meter, and the energy meter is for detection by the reflectance coating
The energy of the laser of reflection.
Wherein, the quasi-molecule laser annealing equipment includes supporter, substrate described in the support body supports.
Wherein, the substrate is amorphous silicon substrate
In conclusion the reflectance coating of the present invention reflects the reflected beams for reaching the reflectance coating, realize described in reduction
Absorption of the line customer to laser solves the technical issues of line customer temperature raising, and then eliminates to institute
State the cooling device of line customer；It is irradiated on the substrate, improves again by the laser beam that the reflectance coating reflects simultaneously
The utilization rate of the laser beam.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structure diagram for the quasi-molecule laser annealing equipment that invention embodiment provides.
Fig. 2 is the structure diagram of the reflectance coating in Fig. 1.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
The present invention provides a kind of quasi-molecule laser annealing equipment, for carrying out laser annealing to substrate 10, disappears including line
Consume device 20, focusing lens 30 and laser 40, the line customer 20 between the substrate 10 and the laser 40,
The focusing lens 30 are between the line customer 20 and the laser 40, and swashing positioned at the laser 40
Light beam is irradiated in the light path of the substrate 10, and the focuses of the focusing lens 30 is in the laser beam directive of the laser 40
In the light path of the substrate 10 and on the substrate 10, the line customer 20 is equipped with through the line customer
20 through chamber 201 and with the reflection cavity 202 connected through chamber 201, the reflection cavity 202 include be equipped with reflectance coating 50
Surface 203, towards the substrate 10, the laser beam that the laser 40 generates passes through the focusing lens on the surface 203
Across described through substrate 10 described in 201 directive of chamber after 30 focusing, the substrate 10 reflexes to the laser beam after focusing
The reflectance coating 50, then it is reflected back into the substrate 10 through the reflectance coating 50.The reflectance coating 50 of the present invention will reach described anti-
The reflection laser beam reflection of film 50 is penetrated, the absorption for reducing the line customer 20 to laser is realized, solves the line
The technical issues of 20 temperature of customer increases, and then eliminate the cooling device to the line customer 20；It is described simultaneously
The laser beam that reflectance coating 50 reflects is irradiated to again on the substrate 10, improves the utilization rate of the laser beam.
In the present embodiment, the substrate 10 is amorphous silicon substrate, and laser is carried out through the quasi-molecule laser annealing equipment
After annealing, 10 crystallization of substrate is polycrystalline silicon substrate.The substrate 10 is supported by supporter 60.The gathering eyeglass 30
Convex lens.The laser beam after focusing irradiates the substrate 10 with the direction for the vertical line of the substrate 10 being in 7 degree.It is described
It is the cavity for penetrating through the line customer 20 to cross chamber 201, and the reflection cavity 202 is fan-shaped chamber.The chamber 201 that penetrates is described
In line customer 20 for the laser 30 generate laser beam by chamber；The reflection cavity 202 disappears for the line
Consume in device 20 supply by the laser beam that the substrate 10 reflects by chamber, and the reflection cavity 202 disappears for the line
Consume device 20 in supply by the laser beam that the reflectance coating 50 reflects by chamber.
In the present embodiment, the surface 203 of the reflection cavity 202 be circular arc camber, the reflectance coating 50 be arc film, institute
It states reflectance coating 50 and fits in the circular arc camber, the center of the circular arc camber reaches the substrate after the laser beam focus
10 position.Specifically, the reflectance coating 30 of arc fits in the circular arc camber of the line customer 20, and the circular arc
Described in the laser beam directive of the center of curved surface in the laser 40 in the light path of substrate 10 and on the substrate 10,
I.e. the center of the reflectance coating 50 of arc is also described in the laser beam directive in the laser 40 in the light path of substrate 10
And on the substrate 10, the reflectance coating 50 of the arc realizes the laser that will be reflected to the reflectance coating 50
The reverse direction that beam reaches the reflectance coating 50 along the laser beam is reflected into the substrate 10, and reflected by the reflectance coating 50
The laser beam can be irradiated to the center of the reflectance coating 50, you can be irradiated on the substrate 10 with the laser
The laser beam that device 40 is sent out is irradiated to the same position of the substrate 10, improves the utilization rate of the laser beam.And due to
The laser beam during reflection, decay by the energy of the laser beam, when the laser reflected by the reflectance coating 50
When beam is irradiated to the substrate 10, the energy very little, and then the laser beam is again by the substrate 10 of the laser beam
When reflected illumination is to the laser 40, the energy of the laser will not impact the laser 40 smaller.
Referring to Fig. 2, the reflectance coating 50 includes 501 and second film layer 502 of the first film layer of intersecting setting,
And the first film layer 501 is located at the outermost layer and innermost layer of the reflectance coating 50, the first film layer 501 has first
Refractive index, second film layer 502 have the second refractive index, and the first refractive index is more than second refractive index.Specifically
Include 501 and second film layer 502 of the first film layer for, the reflectance coating 50, the first film layer 501 and described second thin
502 intersecting of film layer, and the innermost layer of the reflectance coating 50 and outermost layer are the first film layer 501, i.e., it is described
The laser beam that substrate 10 reflects contacts first with the first film layer 501 with first refractive index, due to described the
The refractive index of one film layer 501 is more than the refractive index of second film layer 502, reaches the part of the first film layer 501
Laser reflects, and part reflects, and the laser beam into second film layer 502 is reflected and reflected again, until
Proceed to the first film layer 501 contacted with the circular arc camber of the reflection cavity 202.Since the laser beam occurs repeatedly
Reflection and refraction, therefore the laser beam for reaching the line customer 20 is seldom, and energy ratio is relatively low, therefore the line customer
The energy of 20 laser beams absorbed is less, and the most laser beam is reflected into the reflection cavity 202, and anti-again
It is emitted back towards to the substrate 10.The first film layer 501 and the intersecting of second film layer 502 of the present invention realizes
The laser beam reflection of the reflectance coating 50 is up to, and reflectivity realizes up to more than 90% and reduces the line customer
The absorption of 20 pairs of laser solves the technical issues of 20 temperature of line customer raising, while eliminates the beam
The cooling device of customer 20 is flowed, and the energy of the laser is reasonably utilized, improves the utilization rate of the laser beam.
In the present embodiment, the first film layer 501 is equal with the thickness of second film layer 502.And described
The thickness of one film layer 501 and second film layer 502 is the integral multiple of the optical maser wavelength a quarter.Specifically,
The first film layer 501 is equal with the thickness of second film layer 502 and is the just whole of the optical maser wavelength a quarter
Several times.Due under these conditions, the reflected light vector sum direction of vibration all same in each film layer of stacking, therefore synthesize described
The amplitude of reflected light increases with the increase of the film number of plies, and energy also increases, therefore is reflected and be irradiated to by the reflectance coating 50
The energy of the laser beam on the substrate 10 is still higher, further improves the utilization rate of the laser beam.And then with
The increase of the film number of plies, is reduced after refraction into the refraction light of the line customer 20, to the line customer 20
Influence is smaller, and eliminates the cooling device of the line customer 20.
In the present embodiment, the first film layer 501 includes silicon nitride film layer, titanium deoxid film layer, five oxidations
Two tantalum thin film layers, zirconia film layer, lanthanium titanate film layer, hafnia film layer and zinc selenide film layer.Second film
Layer 502 includes magnesium fluoride film layer, silicon oxide film layer, aluminum oxide film layer and titanium nitride thin film layer.It is therefore thin described first
During the intersecting of film layer 501 and second film layer 502, the first film layer 501 can be silicon nitride film
Layer, titanium deoxid film layer, five oxidation two tantalum film layer, zirconia film layer, lanthanium titanate film layer, hafnia film layer and selenium
Change a kind of or wherein arbitrary several combination in zinc film layer.Second film layer 502 can be magnesium fluoride film layer,
A kind of or wherein arbitrary several combination in silicon oxide film layer, aluminum oxide film layer and titanium nitride thin film layer.
The quasi-molecule laser annealing equipment includes energy meter (not shown), and the energy meter is reflected for detecting
The laser energy.Specifically, the energy meter is set in the line customer 20 close to the position of the reflectance coating 50
It puts, the energy meter determines the reflectance coating for detecting the energy of the laser after being reflected by the reflectance coating 50
The first film layer described in 50 501 and the number of plies of second film layer 502.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, one of ordinary skill in the art will appreciate that realizing all or part of flow of above-described embodiment, and will according to right of the present invention
Made equivalent variations are sought, still falls within and invents covered range.
Claims (10)
1. a kind of quasi-molecule laser annealing equipment, for carrying out laser annealing to substrate, which is characterized in that consumed including line
Device, focusing lens and laser, the line customer are set between the substrate and the laser, the focusing lens
Between the line customer and the laser, and the light of the laser beam irradiation substrate positioned at the laser
On the road, in the light path of substrate and positioned at described described in the laser beam directive of the focus of the focusing lens in the laser
On substrate, the line customer be equipped with through the line customer through chamber and with it is described connect through chamber it is anti-
Chamber is penetrated, the reflection cavity includes the surface equipped with reflectance coating, the laser that the surface is generated towards the substrate, the laser
Beam passes through described through substrate described in chamber directive after being focused on by the focusing lens, the substrate is by the laser after focusing
Beam reflexes to the reflectance coating, then is reflected back into the substrate through the reflectance coating.
2. quasi-molecule laser annealing equipment according to claim 1, which is characterized in that the surface of the reflection cavity includes circle
Arc surface, the reflectance coating are arc film, and the reflectance coating fits in the circular arc camber, and the center of the circular arc camber is in institute
It states described in the laser beam directive of laser in the light path of substrate and on the substrate.
3. quasi-molecule laser annealing equipment according to claim 2, which is characterized in that the reflectance coating includes intersecting
The first film layer and the second film layer of setting, and the first film layer is located at the outermost layer and innermost layer of the reflectance coating,
The first film layer has first refractive index, and second film layer has the second refractive index, and the first refractive index is more than
Second refractive index.
4. quasi-molecule laser annealing equipment according to claim 3, which is characterized in that the first film layer and described the
The thickness of two film layers is equal.
5. quasi-molecule laser annealing equipment according to claim 4, which is characterized in that the first film layer and described the
The thickness of two film layers is the integral multiple of the optical maser wavelength a quarter.
6. according to claim 3-5 any one of them quasi-molecule laser annealing equipment, which is characterized in that the first film layer
Including silicon nitride film layer, titanium deoxid film layer, five oxidation two tantalum film layer, zirconia film layer, lanthanium titanate film layer, oxygen
Change hafnium film layer and zinc selenide film layer.
7. according to claim 3-5 any one of them quasi-molecule laser annealing equipment, which is characterized in that second film layer
Including magnesium fluoride film layer, silicon oxide film layer, aluminum oxide film layer and titanium nitride thin film layer.
8. quasi-molecule laser annealing equipment according to claim 7, which is characterized in that the quasi-molecule laser annealing equipment
Including energy meter, the energy meter is used to detect the energy of the laser reflected by the reflectance coating.
9. quasi-molecule laser annealing equipment according to claim 8, which is characterized in that the quasi-molecule laser annealing equipment
Including supporter, substrate described in the support body supports.
10. quasi-molecule laser annealing equipment according to claim 9, which is characterized in that the substrate is amorphous silicon substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711449637.9A CN108188598A (en) | 2017-12-27 | 2017-12-27 | Quasi-molecule laser annealing equipment |
| PCT/CN2018/074344 WO2019127810A1 (en) | 2017-12-27 | 2018-01-26 | Excimer laser annealing equipment |
| US15/996,396 US20190198364A1 (en) | 2017-12-27 | 2018-06-01 | Excimer laser annealing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711449637.9A CN108188598A (en) | 2017-12-27 | 2017-12-27 | Quasi-molecule laser annealing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108188598A true CN108188598A (en) | 2018-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711449637.9A Pending CN108188598A (en) | 2017-12-27 | 2017-12-27 | Quasi-molecule laser annealing equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108188598A (en) |
| WO (1) | WO2019127810A1 (en) |
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| CN203589031U (en) * | 2013-10-15 | 2014-05-07 | 昆山工研院新型平板显示技术中心有限公司 | Anti-laser-damage thin film structure for AMOLED polymer substrate |
| CN106785817B (en) * | 2017-03-24 | 2020-03-06 | 京东方科技集团股份有限公司 | Optical equipment and excimer laser annealing system |
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2017
- 2017-12-27 CN CN201711449637.9A patent/CN108188598A/en active Pending
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2018
- 2018-01-26 WO PCT/CN2018/074344 patent/WO2019127810A1/en active Application Filing
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| CN1731635A (en) * | 2004-08-13 | 2006-02-08 | 中国科学院长春光学精密机械与物理研究所 | Organic micro-cavity laser in electric pump Pu and preparation method thereof |
| JP2011204912A (en) * | 2010-03-25 | 2011-10-13 | Japan Steel Works Ltd:The | Method for manufacturing laser anneal processed body, and laser annealing apparatus |
| CN103934568A (en) * | 2013-01-22 | 2014-07-23 | 三星显示有限公司 | Laser annealing apparatus |
| CN103614541A (en) * | 2013-10-31 | 2014-03-05 | 中国科学院宁波材料技术与工程研究所 | Laser impact strengthening device aiming at workpiece surface and laser impact strengthening processing method |
| CN203579009U (en) * | 2013-11-15 | 2014-05-07 | 深圳市大族激光科技股份有限公司 | Optical isolation system and optical isolator |
| CN205692801U (en) * | 2016-06-29 | 2016-11-16 | 昆山国显光电有限公司 | A kind of quasi-molecule laser annealing device |
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| WO2019127810A1 (en) | 2019-07-04 |
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