CN108183160A - A kind of high-luminous-efficiency nitride LED device - Google Patents
A kind of high-luminous-efficiency nitride LED device Download PDFInfo
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- CN108183160A CN108183160A CN201810005283.7A CN201810005283A CN108183160A CN 108183160 A CN108183160 A CN 108183160A CN 201810005283 A CN201810005283 A CN 201810005283A CN 108183160 A CN108183160 A CN 108183160A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention discloses a kind of high-luminous-efficiency nitride LED device, LED materials are sapphire substrates, successively grow GaN epitaxy buffer layer, N GaN layers, InGaN/GaN MQWs, P GaN layers and ITO layer successively in sapphire substrates；In p GaN layer etching period isosceles triangle optical grating constructions, one layer of ITO is deposited on p GaN optical grating constructions as transition zone；In the surface layer etching period isosceles triangular structure of ITO layer, the Ag gratings of 20nm thickness are made between the isosceles triangle grating on ITO surface layers to excite SP；On ITO layer surface, evaporation metal makes P-type electrode, and N-type electrode is made in n GaN layers.The present invention can improve the internal quantum efficiency and light extraction efficiency of LED, moreover it is possible to reduce device carrier lifetime, improve luminous efficiency.
Description
Technical field
The present invention relates to LED technology field, especially a kind of nitride LED device.
Background technology
Nitride LED with its is small, the small, long lifespan that consumes energy and high reliability have been widely used in illumination,
The fields such as display, optic communication.But the luminous efficiency of existing LED is relatively low, and the development of LED industry is caused to be restricted, and improves LED hairs
Optical property becomes the research hotspot that LED makes and applies.
The luminous efficiency of LED is determined that external quantum efficiency depends primarily on light extraction efficiency and interior quantum effect by external quantum efficiency
Rate, on the one hand, since the refractive index of GaN is significantly larger than air refraction, light in GaN with being totally reflected in Air Interface,
Make in most light reflection time GaN, generation thermal energy, in only least a portion of light ray radiation to air.This not only causes LED light
Recovery rate reduces, and LED is made to be chronically at hot operation state, the lost of life.It is roughened by means of surface, light extraction can be increased
Area, and the light that should be totally reflected is made to be projected from different surfaces, amplification escape angle, so as to improve light extraction efficiency.It is another
The internal quantum efficiency of aspect GaN base LED at room temperature will increase internal quantum efficiency and usually rely on and improve GaN material life than relatively low
The methods of long quality, but this kind of method is substantially more expensive.In recent years, it is improved using metal surface local plasmon bulk properties
The research of LED performances receives significant attention, mainly including the use of SPP and LSP improve LED internal quantum efficiency, light extraction efficiency and
Improve light outgoing characteristic etc..When the resonant frequency of the SPP of metal surface is Chong Die with the glow frequency of GaN Quantum Well, SPP
The energy coupled in pattern dramatically increases, therefore its internal quantum efficiency improves.To make the resonant frequency of SPP and the transmitting of LED
Crest frequency covering overlaps, and obtains the internal quantum efficiency to bigger, various metal Nano structures are used widely, including metal
Nanometer grating, nano metal ion, nano-antenna, nano array structure etc..It can make the escape of GaN using metal nano grating
Angle is effectively amplified, so as to be more favorable for the light extraction of LED.Since the doping concentration of p-GaN is relatively low, resistance value is larger, leads to
One layer of ito thin film is often deposited on p-GaN surfaces as current extending, ITO has highly transmissive, can reduce and be reflected back LED
Internal light.The present invention is based on principles above, and the luminous efficiency of LED can be made to improve 50 times.
Invention content
Present invention aims at provide a kind of raising LED light recovery rate and internal quantum efficiency, enhance LED luminous efficiencies comprehensively
High-luminous-efficiency nitride LED device.
To achieve the above object, following technical scheme is employed：The present invention includes LED materials, and the LED materials are blue precious
Ground mass bottom, in sapphire substrates successively successively growth GaN epitaxy buffer layer, N-GaN layers, InGaN/GaN MQWs, P-GaN layers
With ITO layer；In p-GaN layer etching period isosceles triangle optical grating construction, one layer of ITO work is deposited on p-GaN optical grating constructions
For transition zone；In the surface layer etching period isosceles triangular structure of ITO layer, between the isosceles triangle grating on ITO surface layers
The Ag gratings of 20nm thickness are made to excite SP；On ITO layer surface, evaporation metal makes P-type electrode, and N-type electricity is made at n-GaN layers
Pole.
Further, on the periodical silver nanoparticle grating, the distance of metal and Quantum Well is 90nm.
Further, the size of the periodical silver nanoparticle grating is optimized makes surface plasmons frequency and Quantum Well
Tranmitting frequency is consistent, and the nano-pillar period is optimized to make lattice surface resonance exit direction consistent with LED light emission directions.
Compared with prior art, the invention has the advantages that：
1st, the internal quantum efficiency and luminous efficiency of device can be increased substantially.
2nd, it is coupled using periodical silver nanoparticle optical grating construction with Quantum Well, reduces device carrier lifetime, improved it and shine
Efficiency.
3rd, using dual periodical isosceles triangle optical grating construction, lighting area, amplification escape angle, so as to carry can be increased
High light extraction efficiency.
Description of the drawings
Fig. 1 is the structure diagram of the present invention.
Drawing reference numeral：1 it is sapphire substrates, 2 be GaN epitaxy buffer layer, 3 be n-GaN layers, 4 be MQWs, 5 is p-GaN
Layer, 6 be ITO layer, 7 be P-type electrode, 8 be Ag, 9 be N-type electrode.
Specific embodiment
The present invention will be further described below in conjunction with the accompanying drawings：
As shown in Figure 1, the present invention include LED materials, the LED materials be sapphire substrates 1, in sapphire substrates according to
Secondary successively growth GaN epitaxy buffer layer 2, N-GaN layers 3, InGaN/GaN MQWs4, P-GaN layers 5 and ITO layer 6；In p-GaN layer
Etching period isosceles triangle optical grating construction deposits one layer of ITO as transition zone on p-GaN optical grating constructions；In ITO layer
Surface layer etching period isosceles triangular structure makes the Ag8 gratings of 20nm thickness between the isosceles triangle grating on ITO surface layers
To excite SP；On ITO layer surface, evaporation metal makes P-type electrode 7, and N-type electrode 9 is made at n-GaN layers.
The present invention is roughened the surface of p-GaN and ITO using dual periodical isosceles triangle optical grating construction, can increase
Lighting area, and the light that should be totally reflected is made to be projected from different surfaces, amplification escape angle, so as to improve light extraction efficiency.
The light extraction efficiency of LED can be made to be increased to 1.5 times using this design.
Being made above ITO has the metallic nanoparticle period of the day from 11 p.m. to 1 a.m, if the band-gap energy of InGaN active layers is led close to metal/semiconductor
During the energy of body interface SP frequencies, electron-hole energy composite energy is rapidly converted into plasma by Quantum Well-SP coupling paths
Body excimer forms the very strong LSP of locality in metal and GaN interfaces.It means that electron-hole is complex as heat dissipation
Relative probability reduces, and which raises the internal quantum efficiencies and luminous efficiency of device.Simultaneously this also means that the unit interval electronics-
Hole-recombination probability increases, i.e., carrier lifetime reduces.
Realize that LSP is coupled with Quantum Well, on the one hand, the LSP frequencies that silver nanometer column size and shape determine are wanted and quantum
Trap energy band matches, and another aspect metal will have suitable distance to realize suitable stiffness of coupling, present invention design with Quantum Well
Metal and Quantum Well distance be 90nm.The effect makes the light extraction efficiency of LED be increased to 50 times.
In the design, silver nanometer column forms periodic nanometer grating, which has lattice surface resonance effects (" nanometer
Antenna "), LSP can be enhanced and be converted into the ability that the photon of specific direction emits again, the suitable screen periods of design alternative can
So that the direction for emitting enhancing again is consistent with device light direction.
Most of dispersion characteristic of nano-antenna is associated with periodical metal structure resistance electromagnetic surface pattern, shows as existing
Following the narrow-band of the high delustring of Rayleigh anomaly regularity, that is, radiation energy is concentrated in an order of diffraction of array plane, these
Frequency band is called lattice surface resonance (SLRs).Therefore, SLRs is each particle local surface plasma under the order of diffraction in face
Body excimer couples the result for causing radiation intensification.
Since the parallel component of wave vector remains unchanged in array surface, we have ± kd=± ki± G, wherein, kdAnd ki
It is the parallel component of diffraction and incident light wave vector respectively；G=(Gx,Gy)=[(2 π/a) p, (2 π/a) q ,] it is reciprocal lattice vector, p and q are
Define the integer of the order of diffraction.In the square array structure of particle, the extremely corresponding initial position of optical diffraction Rayleigh is (± 1,0)
(0, ± 1) order of diffraction.
Because plasma-photon feature of mixing, SLRs can effectively carry out radiation coupling.Near array
The transmitting light of excitation can decay into SLRs, and SLRs is radiated free space, so as to control spontaneous emission.By changing nanometer
The shape and size of grain, lattice structure and array periodically to adjust scattering properties, can realize photoemissive orientation enhancing.
Metallic periodic structure is to CSPPThere is good controllability.
The present invention is directly coupled using periodical silver nanoparticle grating with Quantum Well, ensure that the LSP that Carrier recombination generates
Effectively emissivities, this aspect improve the light extraction efficiency of device again, on the other hand reduce converting photons as the several of heat
Rate, reduces device heating, is further conducive to improve device current density.
A kind of offer an example periodic nanometer array of particles manufacture craft as embodiment.
The method for making nano-particle has：Pass through hot-working [PTP] after sputtering or electron beam evaporation progress vacuum deposition, electricity
Beamlet photoetching [EBL], nanosphere lithography [NSL], nano impression, chemical synthesis etc..But these not all techniques can be used
In the making of LEDs nano-arrays, for example many chemical treating processes can damage the structure of LED, and vacuum deposition method can make small
Size Distribution particle (1.5nm~30nm), cannot but control the periodic arrangement of particle, and Nanosphere lithography technique dosage lacks cost
It is low, it can be difficult to the number of other, non-spherical shapes such as manufacture cylindricality, and the equipment cost of nanometer embossing is too high.The present invention utilizes nanometer pressure
Print technology and sense coupling technology are in p-GaN layer and ITO current extendings difference etching period isosceles three
Angular optical grating construction.
In order to control the size of nano-particle and particle interval, the present invention has selected E-beam lithography (EBL), EBL warps
It is usually used in the single dispersion metal nanometer particles of 1~100nm of making, current state-of-the-art photoetching has<The resolution ratio of 10nm, therefore
Higher local surface plasma resonant vibration (LSPR) array structure of precision is made in GaN base LED light-emitting surfaces using EBL technologies.So
ITO current extendings make substrate afterwards, make column Nano silver grain on the surface thereof, apply one on substrate by spin-coating method first
The polymethyl methacrylate (polymethyl methacrylate (PMMA)) of layer 60nm thickness, 8 are toasted at a temperature of 170 DEG C
Hour, later using high parallel electron beam by designed program in PMMA layer inscription, PMMA- developers and different are used after exposure
Propyl alcohol ratio is 1:2 intermixture carries out positive development to sample, then applies a layer thickness in sample surfaces using thermal evaporation techniques
The Ag of (50nm) is removed finally by stripping technology using the Ag of acetone soln remaining PMMA and its above, by electron beam
The silver particles of exposure area stay in p-type GaN surfaces, form periodic array.
Embodiment described above is only that the preferred embodiment of the present invention is described, not to the model of the present invention
It encloses and is defined, under the premise of design spirit of the present invention is not departed from, those of ordinary skill in the art are to the technical side of the present invention
The various modifications and improvement that case is made should all be fallen into the protection domain that claims of the present invention determines.
Claims (3)
1. a kind of high-luminous-efficiency nitride LED device, it is characterised in that：The LED materials are sapphire substrates, in sapphire
GaN epitaxy buffer layer, N-GaN layers, InGaN/GaNMQWs, P-GaN layers and ITO layer are successively grown in substrate successively；In p-GaN
Layer etching period isosceles triangle optical grating construction deposits one layer of ITO as transition zone on p-GaN optical grating constructions；In ITO layer
Surface layer etching period isosceles triangular structure, between the isosceles triangle grating on ITO surface layers make 20nm thickness Ag light
Grid are to excite SP；On ITO layer surface, evaporation metal makes P-type electrode, and N-type electrode is made at n-GaN layers.
2. a kind of high-luminous-efficiency nitride LED device according to claim 1, it is characterised in that：In the periodicity
On silver nanoparticle grating, the distance of metal and Quantum Well is 90nm.
3. a kind of high-luminous-efficiency nitride LED device according to claim 1, it is characterised in that：The periodically silver
The size of nanometer grating is optimized to make surface plasmons frequency consistent with quantum well emission frequency, and the nano-pillar period is optimized
Make lattice surface resonance exit direction consistent with LED light emission directions.
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| CN201810005283.7A CN108183160B (en) | 2018-01-03 | 2018-01-03 | A kind of high-luminous-efficiency nitride LED device |
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| CN201810005283.7A CN108183160B (en) | 2018-01-03 | 2018-01-03 | A kind of high-luminous-efficiency nitride LED device |
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| CN108183160A true CN108183160A (en) | 2018-06-19 |
| CN108183160B CN108183160B (en) | 2019-07-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117080342A (en) * | 2023-10-18 | 2023-11-17 | 江西兆驰半导体有限公司 | Light-emitting diode chip and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101487974A (en) * | 2008-01-17 | 2009-07-22 | 晶元光电股份有限公司 | Nano-scale printing mould structure and its use on luminous element |
| US20090189172A1 (en) * | 2008-01-24 | 2009-07-30 | Shyi-Ming Pan | Light emitting diode with higher illumination efficiency |
| CN101859855A (en) * | 2010-05-14 | 2010-10-13 | 厦门市三安光电科技有限公司 | Quaternary upright lighting diode with double roughened surfaces and preparation method thereof |
-
2018
- 2018-01-03 CN CN201810005283.7A patent/CN108183160B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101487974A (en) * | 2008-01-17 | 2009-07-22 | 晶元光电股份有限公司 | Nano-scale printing mould structure and its use on luminous element |
| US20090189172A1 (en) * | 2008-01-24 | 2009-07-30 | Shyi-Ming Pan | Light emitting diode with higher illumination efficiency |
| CN101859855A (en) * | 2010-05-14 | 2010-10-13 | 厦门市三安光电科技有限公司 | Quaternary upright lighting diode with double roughened surfaces and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117080342A (en) * | 2023-10-18 | 2023-11-17 | 江西兆驰半导体有限公司 | Light-emitting diode chip and preparation method thereof |
| CN117080342B (en) * | 2023-10-18 | 2024-01-19 | 江西兆驰半导体有限公司 | Light-emitting diode chip and preparation method thereof |
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| CN108183160B (en) | 2019-07-26 |
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