CN108183066A - The restorative procedure of display panel - Google Patents
The restorative procedure of display panel Download PDFInfo
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- CN108183066A CN108183066A CN201711476538.XA CN201711476538A CN108183066A CN 108183066 A CN108183066 A CN 108183066A CN 201711476538 A CN201711476538 A CN 201711476538A CN 108183066 A CN108183066 A CN 108183066A
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- display panel
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- silicon layer
- polycrystalline silicon
- restorative procedure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of restorative procedures of display panel, dot structure is provided in the display panel, the dot structure includes thin film transistor (TFT), the thin film transistor (TFT) includes light shield layer and low-temperature polycrystalline silicon layer, and the low-temperature polycrystalline silicon layer is located on the light shield layer and extends from the edge of the light shield layer；Wherein, the restorative procedure is used for since the uneven dot structure for causing display abnormal of low-temperature polycrystalline silicon layer crystallization is repaired, the restorative procedure includes：For the dot structure that the display is abnormal, the low-temperature polycrystalline silicon layer of the light shield layer fringe region is located at using laser irradiation.The present invention can improve the yield of final products to being repaired due to the uneven dot structure for causing display abnormal of low-temperature polycrystalline silicon layer crystallization.
Description
Technical field
The present invention relates to display technology fields, more particularly to a kind of restorative procedure of display panel.
Background technology
Panel display apparatus has many merits such as thin fuselage, power saving, radiationless, is widely used.It is existing
Panel display apparatus mainly includes liquid crystal display device (Liquid Crystal Display, LCD) and organic electroluminescent is shown
Showing device (Organic Light Emitting Display, OLED).Thin film transistor (TFT) (Thin Film Transistor,
TFT) be panel display apparatus important component, may be formed on glass substrate or plastic base, usually as open the light dress
It puts and is used in such as LCD, OLED with driving device.
In recent years, display technology is rapidly developed, and thin-film transistor technologies are brilliant by original non-crystalline silicon (a-Si) film
Body pipe develops to low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) thin film transistor (TFT).LTPS films are brilliant
Body pipe has various advantages, for example, LTPS thin film transistor (TFT)s have higher electron mobility, can not only effectively reduce
The area of thin film transistor (TFT) improves aperture opening ratio, and can reduce overall power while display brightness is improved.For another example, compared with
Section driving circuit can be integrated on substrate by high electron mobility, reduce drive integrated circult IC, significantly be promoted aobvious
Show the reliability of panel, manufacture cost is greatly lowered.Therefore, LTPS thin film transistor (TFT)s gradually become grinding for display technology field
Study carefully hot spot.
Low-temperature polysilicon film is made often with quasi-molecule laser annealing (Excimer Laser Annealing, ELA) side
Method, the basic principle of this method is the excimer laser irradiation using high-energy to amorphous silicon membrane surface, melt non-crystalline silicon,
Cooling, recrystallization, realize the transformation from non-crystalline silicon to polysilicon.Low-temperature polysilicon film prepared by quasi-molecule laser annealing method
Crystal grain is big, intracrystalline imperfection is few, electrology characteristic is good, it has also become the main method that at present prepared by low-temperature polysilicon film.Using standard point
The shortcomings that polysilicon membrane prepared by sub- laser crystallization also has itself：During quasi-molecule laser annealing, amorphous silicon layer is each
The heated situation in a region reaches unanimity, and the starting point of recrystallization and the direction of growth of crystal grain are in disorder, the low temperature after recrystallization
Intercrystalline crystal boundary is on the high side in polysilicon membrane and is unevenly distributed, cause thin film transistor (TFT) threshold voltage and mobility it is uniform
Property is bad.Normally, the active layer back side of low-temperature polysilicon film transistor is both provided with light shield layer, is utilized on light shield layer
When ELA prepares low-temperature polysilicon film, since the edge of light shield layer has the side of certain slope, positioned at the edge of light shield layer
Region low-temperature polysilicon film out-of-flatness, therefore to crystallize non-uniform problem particularly bright for the low-temperature polysilicon film in the region
It is aobvious.
For the display panel prepared by low-temperature polysilicon film, since low-temperature polycrystalline silicon layer crystallization is uneven, can cause
There is pixel bright spot or pixel dim spot in display picture.The performance diagram of thin film transistor (TFT) as shown in Figure 1, wherein,
L1 is characteristic curve of the good thin film transistor (TFT) when Vd (drain voltage) is 0.1V, and the good thin film transistor (TFT)s of L2 are in Vd
Characteristic curve during 10V, the characteristic curve that L3 is undesirable thin film transistor (TFT) when Vd is 0.1V, the undesirable thin film transistor (TFT)s of L4
Characteristic curve when Vd is 10V.Refering to Fig. 1, when display panel shows bright picture, the film that characteristic curve is L3 and L4 is brilliant
Body pipe can not be normally-open, corresponding pixel is rendered as dim spot.And when display panel shows that picture is converted from high brightness picture
During for dark picture, characteristic curve can not export the charge in pixel for the thin film transistor (TFT) of L3 and L4 in time again, cause corresponding
Pixel is rendered as bright spot.Therefore, the pixel abnormal for appearing above display, it is necessary to which repair allows it to show normally
Picture.
Invention content
In view of this, it the present invention provides a kind of restorative procedure of display panel, is used for due to low-temperature polycrystalline silicon layer
The uneven dot structure for causing display abnormal is crystallized to be repaired.
In order to realize above-mentioned purpose, present invention employs following technical solutions：
A kind of restorative procedure of display panel is provided with dot structure in the display panel, and the dot structure includes
Thin film transistor (TFT), the thin film transistor (TFT) include light shield layer and low-temperature polycrystalline silicon layer, and the low-temperature polycrystalline silicon layer is located at the screening
Extend on photosphere and from the edge of the light shield layer；Wherein, the restorative procedure is used for due to the low-temperature polycrystalline silicon layer
It crystallizes the uneven dot structure for causing display abnormal to be repaired, the restorative procedure includes：Abnormal for the display
Dot structure is located at the low-temperature polycrystalline silicon layer of the light shield layer fringe region using laser irradiation.
Wherein, the laser is the laser that wavelength is 1046nm.
Wherein, the energy density of the laser is 10~20mJ/cm2。
Wherein, the low-temperature polycrystalline silicon layer is to prepare to be formed using quasi-molecule laser annealing technique.
Wherein, the abnormal dot structure of the display includes：
The dot structure of bright spot is shown as when the display panel shows dark-state picture；And
The dot structure of dim spot is shown as when the display panel shows illuminated state picture.
Wherein, the thin film transistor (TFT) further includes gate electrode, source electrode and drain electrode；The gate electrode, source electrode and leakage
Electrode is formed on the low-temperature polycrystalline silicon layer, the gate electrode and the low-temperature polycrystalline silicon layer mutually insulated, the source electrode
The low-temperature polycrystalline silicon layer is connected respectively to the drain electrode.
Wherein, the light shield layer includes spaced the first shading region and the second shading region, the low-temperature polycrystalline silicon layer
Including first straight line portion, second straight line portion and bending connecting portion, the first straight line portion is located on first shading region simultaneously
Extend from the opposite sides of first shading region, the second straight line portion is located on second shading region and from described
The opposite sides of two shading regions is extended, and the bending connecting portion connects the first straight line portion and the second straight line portion；Institute
Gate electrode is stated to be located on the low-temperature polycrystalline silicon layer and with the first straight line portion and second straight line portion insulation intersect, it is described
Drain electrode is connected to the first straight line portion, and the source electrode is connected to the second straight line portion.
Wherein, the fringe region include positioned at first shading region opposite sides edge first edge region and
Second edge region further includes the third fringe region positioned at the opposite sides edge of second shading region and the 4th marginal zone
Domain.
Wherein, the display panel is liquid crystal display panel, is provided with what is arranged in matrix in the liquid crystal display panel
Multiple dot structures.
Wherein, the restorative procedure includes step：
S100, lighting test is carried out to the display panel, obtains the abnormal dot structure of the display；
S200, the dot structure for the display exception, using laser from light shield layer side irradiation positioned at described
The low-temperature polycrystalline silicon layer of light shield layer fringe region.
The restorative procedure of the display panel provided in the embodiment of the present invention, for due to low-temperature polycrystalline silicon layer crystallize it is uneven
Using the low-temperature polycrystalline silicon layer of laser irradiation thin film transistor (TFT) therein, it is more to improve low temperature for the dot structure for causing display abnormal
The crystalline state of crystal silicon layer, can be with so as to show that abnormal dot structure reparation is to optimize the conductive characteristic of thin film transistor (TFT)
The dot structure normally shown promotes the quality of product.
Description of the drawings
Fig. 1 is the performance diagram of thin film transistor (TFT) in existing display panel, is shown including pixel normal and aobvious
Show the characteristic curve of abnormal thin film transistor (TFT)；
Fig. 2 is the structure diagram of the thin film transistor (TFT) in display panel provided in an embodiment of the present invention；
Fig. 3 is the process flow chart of the restorative procedure of display panel provided in an embodiment of the present invention；
Fig. 4 is the performance diagram of the thin film transistor (TFT) after being repaired in the embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid because having obscured the present invention during unnecessary details, in the accompanying drawings only
It shows the structure and/or processing step closely related with scheme according to the present invention, and is omitted little with relationship of the present invention
Other details.
A kind of restorative procedure of display panel is present embodiments provided, for including low-temperature polysilicon film transistor
Display panel is repaired.Multiple dot structures are provided in display panel, each pixel dot structure includes film crystal
Pipe, the active layer of the thin film transistor (TFT) is using low-temperature polysilicon film, and the low-temperature polysilicon film is using quasi-molecule
Laser annealing technique prepares.In the prior art, there is crystallization not using polysilicon membrane prepared by Excimer-Laser Crystallization
Uniformly, there are problems that pixel bright spot or pixel dim spot so as to cause display panel, especially in the area at the edge of light shield layer
Domain, due to low-temperature polysilicon film out-of-flatness, the non-uniform problem of low-temperature polysilicon film crystallization in the region is particularly bright
It is aobvious.Restorative procedure provided in this embodiment is used for due to the uneven pixel knot for causing display abnormal of low-temperature polycrystalline silicon layer crystallization
Structure is repaired, and is the dot structure that can normally show by the dot structure reparation for showing exception.
In the present embodiment, the display panel is liquid crystal display panel, is provided in the liquid crystal display panel in matrix
Multiple dot structures of arrangement.
As shown in Fig. 2, low-temperature polysilicon film transistor is more including the low temperature being formed on underlay substrate 1 in display panel
Crystal silicon layer 2, gate electrode 3, source electrode 4 and drain electrode 5.Wherein, the gate electrode 3 be located on the low-temperature polycrystalline silicon layer 2 and
Intersect with the low-temperature polycrystalline silicon layer 2 insulation, the source electrode 4 and the drain electrode 5 are located on the low-temperature polycrystalline silicon layer 2 simultaneously
And it is electrically connected respectively with the low-temperature polycrystalline silicon layer 2.Further, for low-temperature polysilicon film transistor, in order to prevent
Low-temperature polycrystalline silicon layer 2 is irradiated by light and electric property is caused to be abnormal, between low-temperature polycrystalline silicon layer 2 and underlay substrate 1
Light shield layer 6 is additionally provided with, light shield layer 6 will be at least set between the channel region of low-temperature polycrystalline silicon layer 2 and underlay substrate 1.
It should be noted that in the structure of low-temperature polysilicon film transistor, the low-temperature polycrystalline silicon layer 2 and the grid
Be provided with gate insulating layer (not shown) between electrode 3, the source electrode 4 and drain electrode 5 it is spaced be located at it is same
In structure sheaf, interlayer insulating film (not shown), institute are provided between the source electrode 4 and drain electrode 5 and the gate electrode 3
State source electrode 4 is connected to the low-temperature polycrystalline silicon layer 2 by the via being arranged in interlayer insulating film and gate insulating layer one
End, the drain electrode 5 are connected to the low-temperature polysilicon by another via being arranged in interlayer insulating film and gate insulating layer
The other end of silicon layer 2.
As shown in Fig. 2, the low-temperature polysilicon film transistor in the present embodiment, the light shield layer 6 includes spaced
First shading region 6a and the second shading region 6b, the low-temperature polycrystalline silicon layer 2 include first straight line portion 21, second straight line portion 22 and
Connecting portion 23 is bent, the first straight line portion 21 is located on the first shading region 6a and from the opposite of the first shading region 6a
Both sides are extended, and the second straight line portion 22 is located on the second shading region 6b and from the second shading region 6b with respect to two
Side is extended, and the bending connecting portion 23 connects the first straight line portion 21 and the second straight line portion 22, the low-temperature polysilicon
The global shape of silicon layer 2 takes the shape of the letter U.The gate electrode 3 be located on the low-temperature polycrystalline silicon layer 2 and with the first straight line portion 21 and
The insulation of second straight line portion 22 is intersecting, and the drain electrode 5 is electrically connected to the first straight line portion 21,4 electricity of source electrode
Property is connected to the second straight line portion 22.
Refering to Fig. 3, the restorative procedure of display panel provided in this embodiment includes step：
S100, lighting test is carried out to the display panel, obtains the abnormal dot structure of display.
Wherein, the abnormal dot structure of the display refers to cause thin film transistor (TFT) since polysilicon membrane crystallization is uneven
Electric property it is abnormal, so as to cause the dot structure of display picture exception, specifically, the dot structure packet of the display exception
It includes：The dot structure of bright spot is shown as when the display panel shows dark-state picture；And it is shown in the display panel bright
The dot structure of dim spot is shown as during state picture.
Wherein, after the completion of display panel group is stood, by carrying out lighting test to the display panel, it may be determined that occur
It shows bright spot and shows the dot structure of dim spot.
S200, the dot structure for the display exception, are located at the light shield layer fringe region using laser irradiation
Low-temperature polycrystalline silicon layer.Laser irradiation is carried out by the low-temperature polycrystalline silicon layer to light shield layer fringe region so that low-temperature polycrystalline silicon layer
The crystalline state in the middle uneven region the most serious of crystallization is improved, so as to fulfill the film crystal to conductive characteristic exception
Pipe is repaired.
Referring to Fig.2, in the present embodiment, the fringe region is included positioned at the opposite sides edge of the first shading region 6a
First edge region 7a and second edge region 7b, further include positioned at the opposite sides edge of the second shading region 6b
Three fringe region 7c and the 4th fringe region 7d.
In the present embodiment, used laser is the laser that wavelength is 1046nm, and the energy density of laser can be according to reality
Border needs to set.In the preferred scheme, the energy density of the laser is 10~20mJ/cm2In the range of.
The performance diagram of thin film transistor (TFT) as shown in Figure 4, wherein, curve L3 and L4 be with the curve L3 in Fig. 1 and
L4 is identical, corresponds to the characteristic curve of undesirable thin film transistor (TFT)；L5 be repair after thin film transistor (TFT) Vd be 0.1V when
Characteristic curve, L6 are characteristic curve of the thin film transistor (TFT) when Vd is 10V after repairing.The characteristic curve of comparison diagram 4 and Fig. 1,
The characteristic curve L5 and L6 of thin film transistor (TFT) after reparation and the characteristic curve L1 and L2 of thin film transistor (TFT) normally shown originally
There is no very big differences.Verify that the picture shown by dot structure after reparation is also just by lighting test after repair
Normal.
In conclusion the restorative procedure of display panel of the embodiment of the present invention, unevenness is crystallized for due to low-temperature polycrystalline silicon layer
The even dot structure for causing display abnormal using the low-temperature polycrystalline silicon layer of laser irradiation thin film transistor (TFT) therein, improves low temperature
The crystalline state of polysilicon layer is to optimize the conductive characteristic of thin film transistor (TFT), so that the dot structure reparation that will show exception is can
With the dot structure normally shown, the quality of product is promoted.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any this practical relationship or sequence.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Non-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including those
Element, but also including other elements that are not explicitly listed or further include as this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
Also there are other identical elements in process, method, article or equipment including the element.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of the application principle is not departed from, several improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
1. a kind of restorative procedure of display panel, dot structure is provided in the display panel, the dot structure includes thin
Film transistor, the thin film transistor (TFT) include light shield layer and low-temperature polycrystalline silicon layer, and the low-temperature polycrystalline silicon layer is located at the shading
Extend on layer and from the edge of the light shield layer；It is characterized in that, the restorative procedure is used for due to the low-temperature polysilicon
The uneven dot structure for causing display abnormal of crystallizing silicon layer is repaired, and the restorative procedure includes：It is different for the display
Normal dot structure is located at the low-temperature polycrystalline silicon layer of the light shield layer fringe region using laser irradiation.
2. the restorative procedure of display panel according to claim 1, which is characterized in that the laser is that wavelength is 1046nm
Laser.
3. the restorative procedure of display panel according to claim 1, which is characterized in that the energy density of the laser is 10
~20mJ/cm2。
4. the restorative procedure of display panel according to claim 1, which is characterized in that the low-temperature polycrystalline silicon layer is application
Quasi-molecule laser annealing technique prepares to be formed.
5. the restorative procedure of display panel according to claim 1, which is characterized in that the abnormal dot structure of the display
Including：
The dot structure of bright spot is shown as when the display panel shows dark-state picture；And
The dot structure of dim spot is shown as when the display panel shows illuminated state picture.
6. the restorative procedure of display panel according to claim 1, which is characterized in that the thin film transistor (TFT) further includes grid
Electrode, source electrode and drain electrode；The gate electrode, source electrode and drain electrode are formed on the low-temperature polycrystalline silicon layer, the grid
Electrode and the low-temperature polycrystalline silicon layer mutually insulated, the source electrode and the drain electrode are connected respectively to the low temperature polycrystalline silicon
Layer.
7. the restorative procedure of display panel according to claim 6, which is characterized in that the light shield layer includes spaced
The first shading region and the second shading region, the low-temperature polycrystalline silicon layer include first straight line portion, second straight line portion and bending connect
Socket part, the first straight line portion is located on first shading region and the opposite sides from first shading region is extended, institute
State that second straight line portion is located on second shading region and the opposite sides from second shading region is extended, the bending connects
Socket part connects the first straight line portion and the second straight line portion；The gate electrode be located on the low-temperature polycrystalline silicon layer and with institute
It states first straight line portion and second straight line portion insulation is intersecting, the drain electrode is connected to the first straight line portion, the source electricity
Pole is connected to the second straight line portion.
8. the restorative procedure of display panel according to claim 7, which is characterized in that the fringe region includes being located at institute
The first edge region at the opposite sides edge of the first shading region and second edge region are stated, is further included positioned at second shading
The third fringe region and the 4th fringe region at the opposite sides edge in area.
9. the restorative procedure of display panel according to claim 1, which is characterized in that the display panel is liquid crystal display
Panel is provided with the multiple dot structures arranged in matrix in the liquid crystal display panel.
10. according to the restorative procedure of any display panels of claim 1-9, which is characterized in that the restorative procedure packet
Include step：
S100, lighting test is carried out to the display panel, obtains the abnormal dot structure of the display；
S200, the dot structure for the display exception are located at the low temperature of the light shield layer fringe region using laser irradiation
Polysilicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711476538.XA CN108183066A (en) | 2017-12-29 | 2017-12-29 | The restorative procedure of display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711476538.XA CN108183066A (en) | 2017-12-29 | 2017-12-29 | The restorative procedure of display panel |
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|---|---|---|---|---|
| JPS587117A (en) * | 1981-07-03 | 1983-01-14 | Seiko Epson Corp | Laser repairing device |
| US5883000A (en) * | 1995-05-03 | 1999-03-16 | Lsi Logic Corporation | Circuit device interconnection by direct writing of patterns therein |
| CN101705477A (en) * | 2009-12-09 | 2010-05-12 | 新奥光伏能源有限公司 | System and method for detecting and repairing crystallization rate of film product on line |
| CN105093659A (en) * | 2015-09-07 | 2015-11-25 | 武汉华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
-
2017
- 2017-12-29 CN CN201711476538.XA patent/CN108183066A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587117A (en) * | 1981-07-03 | 1983-01-14 | Seiko Epson Corp | Laser repairing device |
| US5883000A (en) * | 1995-05-03 | 1999-03-16 | Lsi Logic Corporation | Circuit device interconnection by direct writing of patterns therein |
| CN101705477A (en) * | 2009-12-09 | 2010-05-12 | 新奥光伏能源有限公司 | System and method for detecting and repairing crystallization rate of film product on line |
| CN105093659A (en) * | 2015-09-07 | 2015-11-25 | 武汉华星光电技术有限公司 | Liquid crystal display panel and manufacturing method thereof |
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Application publication date: 20180619 |