CN108172667B - Graphite plate and manufacturing method of light-emitting diode - Google Patents
Graphite plate and manufacturing method of light-emitting diode Download PDFInfo
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- CN108172667B CN108172667B CN201711476174.5A CN201711476174A CN108172667B CN 108172667 B CN108172667 B CN 108172667B CN 201711476174 A CN201711476174 A CN 201711476174A CN 108172667 B CN108172667 B CN 108172667B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 48
- 239000010439 graphite Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005119 centrifugation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the field of semiconductors, and particularly relates to a graphite disc and a manufacturing method of a light emitting diode. On the basis of the existing process, the epitaxial layers emitting light with different wavelengths can be formed in the same epitaxial growth machine chamber by adopting the cover plate, the process is simple, and the operation is convenient.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a method for covering different areas of a substrate in a partition manner by adopting two cover plates with the same pattern and respectively epitaxially growing epitaxial layers with different wavelengths in the different areas, and a graphite disc adopted for implementing the method.
Background
The Light Emitting Diode (LED) is a new product with great influence in the photoelectronic industry, has the characteristics of small volume, long service life, rich and colorful colors, low energy consumption and the like, and is widely applied to the fields of illumination, display screens, signal lamps, backlight sources, toys and the like.
In the process of manufacturing the LED, the process mainly includes an epitaxy process and a chip process, wherein the epitaxy process usually grows in a graphite plate of a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus, a plurality of circumferentially distributed grooves are formed in the graphite plate, and a substrate is placed in the grooves for epitaxial growth.
MOCVD equipment mixes II or III group metal organic compound with VI or V group element hydride and then leads the mixture into a reaction cavity, when the mixed gas flows through the surface of a heated substrate, thermal decomposition reaction is generated on the surface of the substrate, and usually, an epitaxial wafer with one color is epitaxially grown in one reaction chamber at one time. The requirement of the white light LED applied to the display screen is more and more extensive, and how to adopt epitaxial layer mixed light emitting of different colors to manufacture the white light LED is a problem which needs to be solved all the time.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for manufacturing a light emitting diode, which at least comprises the following steps:
s1, providing a plurality of substrates and a graphite disc, wherein the graphite disc is provided with a plurality of grooves for placing the substrates, the side wall of each groove is horizontally provided with a first concave area and a second concave area which are opposite, and the distance between the second concave area and the bottom of the groove is larger than that of the first concave area;
s2, providing a first cover plate and a second cover plate with the same pattern, wherein the first cover plate is arranged on the surface of the substrate, and the second cover plate is arranged on the surface of the first cover plate;
s3, rotating the graphite disc, wherein the first cover plate partially deflects to the first concave area under the action of centrifugal force, the second cover plate is unchanged in position, part of the surface of the substrate is exposed, and a first wavelength epitaxial layer epitaxially grows on the exposed part;
and S4, reversely rotating the graphite disc, wherein the first cover plate is reset under the action of centrifugal force, the second cover plate is partially offset into the second concave area under the action of centrifugal force, part of the surface of the substrate is exposed again, and a second wavelength epitaxial layer is epitaxially grown on the exposed part to form the wafer with the first wavelength epitaxial layer, the second wavelength epitaxial layer and the blank area.
Preferably, the patterns of the first cover plate and the second cover plate respectively comprise strip-shaped hollow areas and shielding areas which are parallel and alternately arranged, wherein the width of each hollow area is greater than that of each shielding area and is less than or equal to the sum of the widths of two shielding areas adjacent to the hollow areas.
Preferably, the width of the hollow area is D, the distance that the first cover plate moves to the first concave area is D1, the distance that the second cover plate moves to the second concave area is D2, and the relationship between D1, D2, and D is: d = D1+ D2.
Preferably, the first concave region has the same depth from the side wall of the groove to the inner graphite plate as the distance from the first cover plate to the first concave region, and the second concave region has the same depth from the side wall of the groove to the inner graphite plate as the distance from the second cover plate to the second concave region.
Preferably, the first concave area and the second concave area are provided with openings towards the groove direction, and the width of the openings is the same as the diameter smaller than the first cover plate and the second cover plate.
Preferably, the width of the hollowed-out area is 2 times that of the shielding area.
Preferably, the lower surface of the first concave area is flush with the upper surface of the substrate, and the lower surface of the second concave area is flush with the upper surface of the first cover plate.
Preferably, the materials of the first cover plate and the second cover plate are graphite or high-melting-point metal.
Preferably, the first wavelength range is 460-470 nm, and the second wavelength range is 492-577 nm.
Preferably, the first wavelength range is 492-577 nm, and the second wavelength range is 460-470 nm.
Preferably, the method further includes a step of forming a third wavelength epitaxial layer in the blank region by a grain transfer method, and forming a wafer having the first wavelength epitaxial layer, the second wavelength epitaxial layer, and the third wavelength epitaxial layer.
Preferably, the mixed light emitted by the first wavelength epitaxial layer, the second wavelength epitaxial layer and the third wavelength epitaxial layer is white light.
Preferably, the third wavelength is in the range of 600 to 700 nm.
The invention also provides a graphite disc for implementing the manufacturing method of the light-emitting diode, wherein the graphite disc is provided with a plurality of grooves for placing substrates, and the manufacturing method is characterized in that: the side wall of each groove is horizontally provided with a first concave area and a second concave area which are opposite, and the distance between the second concave area and the bottom of the groove is larger than that of the first concave area.
The side wall of a groove of a graphite disc is horizontally provided with a first concave area and a second concave area which are opposite, a substrate is arranged in the groove, a first cover plate and a second cover plate with the same patterns are covered on the substrate, the first cover plate and the second cover plate respectively deviate a certain distance towards the first concave area and the second concave area under the action of rotation and centrifugation of the graphite disc, so that the surface of the substrate is exposed in a partitioning mode, epitaxial layers with different wavelengths are epitaxially grown, a wafer with epitaxial layers with two wavelengths is formed, further, the epitaxial layer with a third wavelength is arranged on the wafer in a crystal grain transfer mode, and a wafer with white light mixed light emitted by the epitaxial layer with the first wavelength, the epitaxial layer with the second wavelength and the epitaxial layer with the third wavelength is formed. On the basis of the existing process, the epitaxial layers emitting light with different wavelengths can be formed in the same epitaxial growth machine chamber by adopting the cover plate, the process is simple, and the operation is convenient.
Drawings
FIG. 1 is a schematic top view of a graphite plate according to an embodiment of the present invention.
FIG. 2 is a first cross-sectional view of a graphite disk along A-A in accordance with an embodiment of the present invention.
FIG. 3 is a schematic top view of a first cover/a second cover according to an embodiment of the present invention.
FIG. 4 is a cross-sectional view A-A of a graphite plate according to an embodiment of the present invention.
Fig. 5 is an enlarged schematic view of the circular broken line in fig. 4.
FIG. 6 is a third schematic cross-sectional view of a graphite disk along A-A in accordance with an embodiment of the present invention.
Fig. 7 is an enlarged schematic view of the circular broken line in fig. 6.
FIG. 8 is a schematic view of a white light wafer according to an embodiment of the present invention.
Detailed Description
The invention will now be described in more detail with reference to the drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous results of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
The invention provides a method for manufacturing a light-emitting diode, which at least comprises the following steps:
s1, referring to fig. 1 and 2, providing a plurality of substrates 20 and a graphite disc 10, the graphite disc 10 having a plurality of grooves 11 for placing the substrates 20, each groove 11 having a side wall horizontally disposed with a first concave region 121 and a second concave region 122 opposite to each other, the distance h2 between the second concave region 122 and the bottom of the groove 11 being greater than the distance h1 between the first concave region 121 and the bottom of the groove 11. The grooves 11 of the graphite disk 10 may be tab disks, rim disks or a combination of tab and rim disks.
As shown in fig. 2, two concave regions are vertically arranged on a side wall of each groove 11, that is, a first concave region 121 of the groove 11 located below and a second concave region 122 of a side wall of an adjacent groove 11 located above are vertically overlapped, and the first concave region 121 and the second concave region 122 of the adjacent two grooves 11 are vertically overlapped, so that the area occupied by the graphite plate 10 can be saved, and more grooves 11 for placing the substrates 20 can be arranged on the graphite plate 10.
S2, referring to fig. 2 and 3, providing a first cover plate 31 and a second cover plate 32 having the same pattern, wherein the first cover plate 31 is disposed on the surface of the substrate 20, and the second cover plate 32 is disposed on the surface of the first cover plate 31.
As shown in fig. 2, the lower surface of the first concave area 121 is flush with the upper surface of the substrate 20, so that the first cover plate 31 on the surface of the substrate 20 can move into the first concave area 121 without being blocked by the sidewall of the groove 11; the lower surface of the second recessed area 122 is flush with the upper surface of the first cover plate 31, also to ensure that the second cover plate 32 on the surface of the first cover plate 31 can move into the second recessed area 122 without being blocked by the side walls of the recess 11. The first cover plate 31 and the second cover plate 32 are both made of graphite or a high melting point metal such as any one of molybdenum, , niobium and chromium. The first cover plate 31 and the second cover plate 32 are the same in shape and size as the base plate 20.
As shown in fig. 3, the patterns of the first cover plate 31 and the second cover plate 32 each include strip-shaped parallel hollow-out regions 311 and blocking regions 312 arranged alternately, wherein the width D of the hollow-out region 311 is greater than that of each blocking region 312 and is less than or equal to the sum of the widths of two blocking regions 312 adjacent to the hollow-out region 311. In this embodiment, the width of the hollow-out region 311 is preferably equal to the sum of the widths of two adjacent shielding regions 312, and further, the width of the hollow-out region 311 is 2 times that of the shielding region 312. The number of the hollow-out regions 311 and the shielding regions 312 can be adjusted according to actual production needs. In order to illustrate the using method of the first cover plate 31 and the second cover plate 32 in the epitaxial growth process and simplify the number of the hollow-out areas 311 and the shielding areas 312, the first cover plate 31 and the second cover plate 32 formed by alternately arranging half of the hollow-out areas 311, one shielding area 312 and half of the hollow-out areas 311 are described as an example in the following.
As shown in fig. 2, before the epitaxial growth, the substrate 20 is first placed in the recess 11, and then the first cover plate 31 and the second cover plate 32 are sequentially placed on the surface of the substrate 20, which is an initial position. The substrate 20 is divided into three regions 21, 22 and 23 at positions corresponding to the hollow-out region 311 and the shielding region 312 of the cover plate, respectively, and epitaxial layers subsequently emitting light with different wavelengths are grown on the three regions, respectively.
S3, referring to fig. 4 and 5, with the graphite disk 10 rotated, the first cover plate 31 is partially displaced into the first recessed region 121 by centrifugal force, the second cover plate 32 is left in place, a portion of the surface of the substrate 20 is exposed, and a first wavelength epitaxial layer W1 is epitaxially grown.
The graphite disc 10 may be rotated first clockwise or the graphite disc 10 may be rotated first counterclockwise in step S3, and if the graphite disc 10 is rotated first clockwise in this step, then counterclockwise in the next step. In this embodiment, the graphite disc 10 is firstly rotated clockwise, and when the graphite disc 10 is rotated clockwise, the first cover plate 31 is partially deflected into the first concave area 121 by the centrifugal force, and the second cover plate 32 cannot be deflected due to being blocked by the side wall of the groove 11. In order to limit the offset distance of the first cover plate 31 to the first concave region 121, in the embodiment, the first concave region 121 and the second concave region 122 both have an opening 1212 (as shown in fig. 1) toward the groove 11, the opening 1212 is in an arc shape, the diameter of the circle corresponding to the arc shape (i.e., the width of the opening) is the same as the diameter of the first cover plate 31 and the diameter of the second cover plate 32, and the depth of the first concave region 121 that is recessed from the side wall of the groove 11 into the inner graphite disk 10 is the same as the distance D1 that the first cover plate 31 moves to the first concave region 121. Therefore, after the first cover 31 moves a certain distance D1 into the first recessed area 121, it is blocked by the sidewall 1211 of the first recessed area 121 and cannot move any further. The offset distance D1 of the first cover 31 is just enough to make the covered area 312 of the first cover 31 coincide with a part of the hollow-out area of the second cover 32, and make a part of the hollow-out area 311 of the first cover 31 coincide with a part of the hollow-out area of the second cover 32, so as to expose a part of the surface of the substrate 20.
In the embodiment, the offset distance D1 of the first cover plate 31 is the same as the width of the shielding region 311, so as to expose the region 21 (as shown in fig. 4) on the surface of the substrate 20, and a first wavelength epitaxial layer W1 is epitaxially grown on the region 21, where the first wavelength epitaxial layer W1 may be a blue light epitaxial layer or a green light epitaxial layer, and the wavelength range is 460 to 470nm or 460 to 470 nm. If the epitaxial growth of the step is a blue light epitaxial layer, the epitaxial growth of the next step is a green light epitaxial layer, and the blue light epitaxial layer is preferentially grown in the embodiment. Because the growth materials of the blue and green epitaxial layers can be gallium nitride, the epitaxial growth can be carried out in the same epitaxial growth machine chamber.
S4, referring to fig. 6 and 7, when the graphite disc 10 is rotated in a reverse direction, the first cover plate 31 is repositioned by the centrifugal force, the second cover plate 32 is partially displaced into the second recessed area 122 by the centrifugal force, exposing a portion of the surface of the substrate 20 and epitaxially growing a second wavelength epitaxial layer W2, thereby forming a wafer having the first wavelength epitaxial layer W1, the second wavelength epitaxial layer W2 and the blank area.
In step S4, the graphite plate 10 is rotated counterclockwise, and under the action of centrifugal force, the first cover plate 31 cannot be shifted further due to being blocked by the other sidewall of the groove 11, so that the graphite plate is reset and restored to the initial position before epitaxial growth; at this time, the second cover plate 32 is partially shifted into the second concave region 122 under the centrifugal action, and the shifting distance D2 is the same as the width of the shielding region 312, so that the shielding region 312 of the first cover plate 31 can be exactly overlapped with the partially hollow-out region of the second cover plate 32, and the partially hollow-out region 311 of the first cover plate 31 is overlapped with the partially hollow-out region of the second cover plate 32, thereby exposing another part of the surface region 23 of the substrate 20, and epitaxially growing a second wavelength epitaxial layer W2 on the region 23, in this embodiment, a green epitaxial layer is grown. Since the region 22 is always shielded by the shielding region 311 without epitaxial layer growth, a blank region is formed.
The width of the hollow area is D, the distance that the first cover plate 31 moves to the first concave area 121 is D1, the distance that the second cover plate 32 moves to the second concave area 122 is D2, and the relationship between D1, D2 and D is as follows: d = D1+ D2.
S5, referring to fig. 8, the method further includes a step of forming a third wavelength epitaxial layer in the empty region (i.e. the region 22) by a die transfer method, so as to form a wafer having a first wavelength epitaxial layer W1, a second wavelength epitaxial layer W2 and a third wavelength epitaxial layer W3. The mixed light emitted by the first wavelength epitaxial layer W1, the second wavelength epitaxial layer W2 and the third wavelength epitaxial layer W3 is white light, the first wavelength light is blue light, the second wavelength light is green light, the third wavelength light can be designed to be red light, so that the white light is formed by mixing, and the range of the third wavelength can be 600-700 nm.
The invention also provides a graphite disc 10 for implementing the manufacturing method of the light-emitting diode, and the specific graphite disc 10 is described in detail above and is not described again here.
The side wall of a graphite disc groove 11 in the invention is horizontally provided with a first concave area 121 and a second concave area 122 which are opposite, a substrate 20 is arranged in the groove 11, the substrate 20 is covered with a first cover plate 31 and a second cover plate 32 which have the same pattern, the first cover plate 31 and the second cover plate 32 respectively deviate a certain distance towards the first concave area 121 and the second concave area 122 under the action of rotation and centrifugation of the graphite disc 10, so that the surface of the substrate 20 is exposed in a partitioning manner, epitaxial layers W1 and W2 with different wavelengths are epitaxially grown, a wafer with epitaxial layers with two wavelengths is formed, furthermore, an epitaxial layer W3 with a third wavelength is arranged on the wafer in a crystal grain transfer manner, and a wafer with white light mixed by the first wavelength epitaxial layer W1, the second wavelength epitaxial layer W2 and the third wavelength epitaxial layer W3 is formed. On the basis of the prior art, by adopting the method of the invention, epitaxial layers emitting light with different wavelengths can be formed in the same epitaxial growth machine chamber by adopting the cover plate on the same substrate 20, and the wafer emitting white light is obtained by combining a crystal grain transfer mode, the process is simple, and the operation is convenient.
It should be understood that the above-mentioned embodiments are preferred examples of the present invention, and the scope of the present invention is not limited to these examples, and any modification made according to the present invention is within the scope of the present invention.
Claims (12)
1. A manufacturing method of a light emitting diode at least comprises the following steps:
s1, providing a plurality of substrates and a graphite disc, wherein the graphite disc is provided with a plurality of grooves for placing the substrates, the side wall of each groove is horizontally provided with a first concave area and a second concave area which are opposite, and the distance between the second concave area and the bottom of the groove is larger than that between the first concave area and the bottom of the groove;
s2, providing a first cover plate and a second cover plate with the same pattern, wherein the first cover plate is arranged on the surface of the substrate, and the second cover plate is arranged on the surface of the first cover plate; the patterns of the first cover plate and the second cover plate respectively comprise strip-shaped hollow areas and shielding areas which are parallel and alternately arranged, wherein the width of each hollow area is greater than that of each shielding area and is less than or equal to the sum of the widths of two shielding areas adjacent to the hollow area;
s3, rotating the graphite disc, wherein the first cover plate partially deflects to the first concave area under the action of centrifugal force, the second cover plate is unchanged in position, part of the surface of the substrate is exposed, and a first wavelength epitaxial layer epitaxially grows on the exposed part;
and S4, reversely rotating the graphite disc, wherein the first cover plate is reset under the action of centrifugal force, the second cover plate is partially offset into the second concave area under the action of centrifugal force, part of the surface of the substrate is exposed again, and a second wavelength epitaxial layer is epitaxially grown on the exposed part to form the wafer with the first wavelength epitaxial layer, the second wavelength epitaxial layer and the blank area.
2. The method of claim 1, wherein: the width of the hollow area is D, the distance of the first cover plate moving to the first concave area is D1, the distance of the second cover plate moving to the second concave area is D2, and the relation among D1, D2 and D is as follows: d = D1+ D2.
3. The method of claim 2, wherein: the first concave region is the same as the distance of the first cover plate moving to the first concave region from the concave depth of the side wall of the groove to the graphite plate, and the second concave region is the same as the distance of the second cover plate moving to the second concave region from the concave depth of the side wall of the groove to the graphite plate.
4. The method of claim 3, wherein: the first inner concave area and the second inner concave area are provided with openings towards the groove direction, and the width of each opening is the same as the diameter of the first cover plate and the diameter of the second cover plate.
5. The method of claim 1, wherein: the width of the hollow-out area is 2 times of that of the shielding area.
6. The method of claim 1, wherein: the lower surface of the first concave area is flush with the upper surface of the substrate, and the lower surface of the second concave area is flush with the upper surface of the first cover plate.
7. The method of claim 1, wherein: the first cover plate and the second cover plate are made of graphite or high-melting-point metal.
8. The method of claim 1, wherein: the first wavelength range is 460-470 nm, and the second wavelength range is 492-577 nm.
9. The method of claim 1, wherein: the first wavelength range is 492-577 nm, and the second wavelength range is 460-470 nm.
10. The method for manufacturing a light emitting diode according to any one of claims 1 to 9, wherein: and forming a third wavelength epitaxial layer in the blank area in a crystal grain transfer mode to form a wafer with the first wavelength epitaxial layer, the second wavelength epitaxial layer and the third wavelength epitaxial layer.
11. The method of claim 10, wherein: the mixed light emitted by the first wavelength epitaxial layer, the second wavelength epitaxial layer and the third wavelength epitaxial layer is white light.
12. The method of claim 10, wherein: the third wavelength is 600-700 nm.
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