CN108172649A - 光伏标准电池结构及其制作方法 - Google Patents
光伏标准电池结构及其制作方法 Download PDFInfo
- Publication number
- CN108172649A CN108172649A CN201810108013.9A CN201810108013A CN108172649A CN 108172649 A CN108172649 A CN 108172649A CN 201810108013 A CN201810108013 A CN 201810108013A CN 108172649 A CN108172649 A CN 108172649A
- Authority
- CN
- China
- Prior art keywords
- alloy substrate
- cell piece
- photovoltaic
- aluminum alloy
- quartz glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 59
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 40
- 239000000956 alloy Substances 0.000 claims abstract description 40
- 229910000833 kovar Inorganic materials 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000005357 flat glass Substances 0.000 claims abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 4
- 239000011118 polyvinyl acetate Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 claims description 3
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229940117958 vinyl acetate Drugs 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 65
- 239000011521 glass Substances 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 239000000306 component Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810108013.9A CN108172649B (zh) | 2018-02-02 | 2018-02-02 | 光伏标准电池结构及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810108013.9A CN108172649B (zh) | 2018-02-02 | 2018-02-02 | 光伏标准电池结构及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108172649A true CN108172649A (zh) | 2018-06-15 |
CN108172649B CN108172649B (zh) | 2024-04-05 |
Family
ID=62512638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810108013.9A Active CN108172649B (zh) | 2018-02-02 | 2018-02-02 | 光伏标准电池结构及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108172649B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115302207A (zh) * | 2022-08-31 | 2022-11-08 | 陕西智拓固相增材制造技术有限公司 | 复合基座的制作方法和复合基座 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020153038A1 (en) * | 2001-04-20 | 2002-10-24 | Akimasa Umemoto | Photovoltaic module having light receptive, glass laminate structure and photovoltaic module having light receptive, multi-layer structure |
JP2009164204A (ja) * | 2007-12-28 | 2009-07-23 | Zeo System:Kk | 光電池装置 |
US20100083999A1 (en) * | 2008-10-01 | 2010-04-08 | International Business Machines Corporation | Tandem nanofilm solar cells joined by wafer bonding |
CN201994316U (zh) * | 2011-01-26 | 2011-09-28 | 武汉日新科技股份有限公司 | 路灯专用双面晶体硅太阳能电池组件 |
CN102315282A (zh) * | 2011-07-07 | 2012-01-11 | 苏州赤诚洗净科技有限公司 | 带辅助清洗功能的太阳能电池组件 |
CN203398135U (zh) * | 2013-07-19 | 2014-01-15 | 武汉日新科技股份有限公司 | 双面受光晶体硅光伏构件 |
CN204575198U (zh) * | 2015-04-29 | 2015-08-19 | 山东浩丰新能源科技有限公司 | 高聚光太阳能发电用光信号传感器 |
EP3057135A1 (en) * | 2015-02-16 | 2016-08-17 | Baoding Yitong PV Science & Technology Co., Ltd. | Photovoltaic module and method for producing the same |
-
2018
- 2018-02-02 CN CN201810108013.9A patent/CN108172649B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020153038A1 (en) * | 2001-04-20 | 2002-10-24 | Akimasa Umemoto | Photovoltaic module having light receptive, glass laminate structure and photovoltaic module having light receptive, multi-layer structure |
JP2009164204A (ja) * | 2007-12-28 | 2009-07-23 | Zeo System:Kk | 光電池装置 |
US20100083999A1 (en) * | 2008-10-01 | 2010-04-08 | International Business Machines Corporation | Tandem nanofilm solar cells joined by wafer bonding |
CN201994316U (zh) * | 2011-01-26 | 2011-09-28 | 武汉日新科技股份有限公司 | 路灯专用双面晶体硅太阳能电池组件 |
CN102315282A (zh) * | 2011-07-07 | 2012-01-11 | 苏州赤诚洗净科技有限公司 | 带辅助清洗功能的太阳能电池组件 |
CN203398135U (zh) * | 2013-07-19 | 2014-01-15 | 武汉日新科技股份有限公司 | 双面受光晶体硅光伏构件 |
EP3057135A1 (en) * | 2015-02-16 | 2016-08-17 | Baoding Yitong PV Science & Technology Co., Ltd. | Photovoltaic module and method for producing the same |
CN204575198U (zh) * | 2015-04-29 | 2015-08-19 | 山东浩丰新能源科技有限公司 | 高聚光太阳能发电用光信号传感器 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115302207A (zh) * | 2022-08-31 | 2022-11-08 | 陕西智拓固相增材制造技术有限公司 | 复合基座的制作方法和复合基座 |
CN115302207B (zh) * | 2022-08-31 | 2024-05-14 | 陕西智拓固相增材制造技术有限公司 | 复合基座的制作方法和复合基座 |
Also Published As
Publication number | Publication date |
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CN108172649B (zh) | 2024-04-05 |
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Effective date of registration: 20240227 Address after: 214101 No. 8, Dongting Chunxin East Road, Xishan District, Wuxi City, Jiangsu Province Applicant after: Wuxi Inspection and Testing Certification Research Institute (Wuxi Metrology and Testing Institute Wuxi Fiber Inspection Center) Country or region after: Zhong Guo Address before: 214101 No. 8, Dongting Chunxin East Road, Xishan District, Wuxi City, Jiangsu Province Applicant before: WUXI PRODUCT QUALITY SUPERVISION AND INSPECTION INSTITUTE Country or region before: Zhong Guo |
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