CN108170910A - A kind of semi-conducting electrode ohmic contact resistance parameter extracting method - Google Patents
A kind of semi-conducting electrode ohmic contact resistance parameter extracting method Download PDFInfo
- Publication number
- CN108170910A CN108170910A CN201711344193.2A CN201711344193A CN108170910A CN 108170910 A CN108170910 A CN 108170910A CN 201711344193 A CN201711344193 A CN 201711344193A CN 108170910 A CN108170910 A CN 108170910A
- Authority
- CN
- China
- Prior art keywords
- electrode
- resistance
- ohmic contact
- contact
- contact resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
Abstract
The invention discloses a kind of semi-conducting electrode ohmic contact resistance parameter extracting methods, and the present invention is identical using each electrode spacing of semiconductor Ohmic contact, and the scheme that electrode width is different, thus brings new more accurate ohmic contact resistance computation model.Scheme is simple, easy-to-use, accurate, due to considering the square resistance variation of half contact underlying materials of gold in itself in actual conditions in this scenario, relative to traditional scheme, the experimental data of acquisition is more accurate, it disclosure satisfy that the requirement of actual process variation, therefore be a kind of technical solution of significantly more efficient assessment ohmic contact characteristic.The technical program model can fully assess Ohm contact electrode, the parameters such as the square resistance of material, the square resistance for contacting base part material and ohmic contact resistance between accurate extraction electrode simultaneously, have positive guiding significance to the design reference of semiconductor devices.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of semi-conducting electrode ohmic contact resistance parameter extracting method.
Background technology
Importance of the solid-state semiconductor device technology in modern science and technology is increasingly prominent, it extensively and profoundly arrived it is civilian,
Each application field such as military affairs, space flight.Application field, particularly extreme condition field have further been expanded in the development of new science and technology,
Volume smaller, power consumption be lower, intelligent chip becomes the important indicator of semiconductor chip, and this requires the semiconductor technologies of acquisition
Parameter is more accurate.Therefore, from semiconductor-based present principles, conventional semiconductors technology model and empirical equation are carried out again
Modeling and scheme Innovation are of great significance.Ohm contact electrode making be solid-state semiconductor device core process link it
One, the technical process such as contact resistance size and electrode fabrication, metal types, Annealing Scheme are closely related.Specifically,
Semi-conducting electrode ohmic contact resistance includes electrode metal resistance ,-half contact interface resistance of gold, electrode interface lower semiconductor and connects
Get an electric shock the ingredients such as resistance, and each ingredient resistance value accounts for the ratio of entire electrode ohmic contact resistance and respectively closed into the physics between sub-resistance
Connection is a the technical issues of needing further investigated.It is big that traditional ohmic contact resistance model often cannot be distinguished from Electrodes
Small each ingredient, can only broadly calculate overall electrical resistance based on conventional model.Particularly, drawing and calculating for convenience,
Conventional model employs more approximate processing, for example, between electrode material square resistance size with contacting base part material
Square resistance size carry out approximately equal processing.Therefore the ohmic contact resistance numerical value being calculated based on conventional model is not
Accurately, us is needed to redesign semi-conducting electrode placement scheme, its ohmic contact resistance calculating process is built again
Mould.
The Typical Representative of traditional ohmic contact resistance model is transmission-line modeling method (TLM), and core implementation process is：System
Make electrodes a series of of same size and that spacing is different, by measuring the resistance per adjacent both ends electrode, Europe is finally calculated
Nurse contact resistance size, electrode lay-out schematic diagram such as Fig. 1.The core feature of conventional model for each electrode width is identical and spacing
It is different.
Traditional ohmic contact resistance model often cannot be distinguished from each ingredient of Electrodes size, based on conventional model
Broadly overall electrical resistance can only be calculated.Particularly, it drawing and calculates for convenience, conventional model employs more near
Like processing, such as the square resistance size of material carries out approximation with contacting the square resistance size of base part material between electrode
Equal processing.In fact, in ohmic contact craft experimentation is carried out, high annealing is often an essential ring
Section, and high annealing often leads to golden-half contact interface element counterdiffusion, therefore the material component of base part and carrier move
Shifting rate will change, therefore its square resistance certainly will differ larger with interelectrode material square resistance.Therefore based on biography
The ohmic contact resistance numerical value that system model is calculated is inaccurate, us is needed to carry out again semi-conducting electrode placement scheme
Design, models its ohmic contact resistance calculating process again.
Invention content
The technical problem to be solved is that by being designed wound to semi-conducting electrode placement scheme for technical solution of the present invention
Newly, a kind of new model of new extractable semi-conducting electrode ohmic contact resistance parameter is provided.The model can be to Ohmic contact
Electrode is assessed, and extracts the square resistance of material, the square resistance of contact base part material and ratio contact electricity between electrode
The parameters such as resistance rate have positive guiding significance to the design reference of semiconductor devices.
In order to solve the above technical problems, specific technical solution of the present invention includes semi-conducting electrode layout designs and concrete model
Two parts are derived, electrode lay-out scheme is as shown in Fig. 2, particular technique flow is described below：
(1) it designs and makes electrode：
It is all d, of different size, respectively W to design in semiconductor material surface and make a series of spacing1,W2……Wn's
Electrode pair, as shown in Figure 2.Wherein each electrode spacing is identical, and electrode width is not all technical solution of the present invention core feature.
(2) electric current-electrode width relationship modeling：
When carrying out I-V tests to n-th pair of adjacent electrode, resistance is represented by：
Rn=2RMn+2RCn+RSFormula (1)
Wherein RMnFor in n-th pair of electrode, itself resistance of single electrode metal, because metal resistance value itself is much smaller than formula
(1) latter two in, therefore ignore its influence in present patent application model；RCnFor in n-th pair of electrode, under single electrode metal
Square contact resistance summation, including golden-half contact interface resistance and electrode interface lower semiconductor contact resistance two parts；RSTo connect
Semiconductor resistor between touched electrode, electrode spacing d is remained unchanged in this model, is definite value；Wherein metal lower contact
Voltage u (x) defers to following substantially uniform equation for transmission line with electric current i (x) regularities of distribution：
It can be obtained by solving above-mentioned equation, and by boundary condition substitution general solution：
And then obtain all-in resistance：
Wherein RS1And RS2Semiconductor square resistance and contact base part semiconductor square electricity respectively between contact electrode
Resistance；ρCOhmic contact resistance for the contact of gold-half；L is electrode length；D is electrode to spacing；WnWidth for electrode.
Therefore, when carrying out electricity I-V tests to n-th pair of electrode, electric current InWith WnRelationship be expressed as：
(3) core parameter obtains：
For formula (5), if by InIt is considered as dependent variable, WnIt is considered as independent variable, other uncorrelated amounts are accordingly to be regarded as constant, and (U is surveys
Voltage is measured, l is electrode length, can be brought directly to numerical value), then functional relation can be expressed as：
Wherein correspondence is as follows：
In addition, by drawing the function, as shown in figure 4, also knowing the function, there are maximum values, i.e. Imax.Take coth
(WnB) during ≈ 1, I is maximum, i.e.,As long as it can be determined by mathematically simple Function Fitting in this way
Tri- unknown quantitys of a, b, c.
I-V characteristic curve in measuring per a pair of electrodes, it is respectively I to take the electric current under same voltage U1,
I2......In；Draw electric current (I at this voltagen) and electrode width (Wn) image In-Wn, and be fitted according to drawing image
Go out nonlinear functionTwo of which relevant parameter (for U to measure voltage, l is electrode length)
It is directly substituted into.Using the various Common softwares such as Excel, Matlab, matched curve so as to obtain the numerical value of unknown parameter a, b, c,
Thus target electrical parameter ρ can directly be calculatedC, RS1, RS2And ImaxNumerical value, correspondence is presented below.
Advantageous effect：Technical solution of the present invention is simple, easy-to-use, accurate, due to considering in actual conditions in this scenario
The square resistance variation of the contact of gold-half underlying materials in itself, relative to traditional scheme, the experimental data of acquisition is more accurate, energy
Enough meet the requirement of actual process variation, therefore be a kind of technical solution of significantly more efficient assessment ohmic contact characteristic.This skill
Art scheme model can fully assess Ohm contact electrode, while the square resistance of material between accurate extraction electrode, connect
The parameters such as the square resistance and ohmic contact resistance of touched electrode underlying materials have the design reference of semiconductor devices positive
Guiding significance.
Description of the drawings
Fig. 1 is typical tradition TLM model electrode design drawings.
Fig. 2 is the vertical view that the present invention carries electrode lay-out.
Fig. 3 is the circuit diagram for the metal-semiconductor ohmic contact resistance distribution that the present invention is carried in model.
Fig. 4 is the representative function image that the present invention puies forward electric current in model-electrode width relationship.
Fig. 5 is the distribution of electrodes light micrograph that actual process makes in example.
Fig. 6 is current data extraction and matched curve in example.
Specific embodiment
(1) electrode fabrication：
Selecting Si substrate GaNs epitaxial wafer, GaN background dopeds are N-shaped as the semi-conducting material in Ohmic contact, and doping is dense
Spend is 1015~1016cm-3.It is 100 μm that electrode light micrograph such as Fig. 5, the long l of electrode are made in experiment, and spacing d is 5 μm, no
Same electrode widths WnRespectively 2,3,4,5,7,15,20,35 μm.
Concrete technology is as follows：
(a) table top of required active area is produced using sense coupling (ICP) technology；
(b) it is corresponded on the table top made using tetra- layers of metals of electron-beam evaporation Ti/Al/Ni/Au, every layer of metal
Thickness is 20/120/45/55nm；
(c) using high-temperature annealing furnace, in 850 DEG C, N2Anneal 30s in environment, is allowed to form Ohmic contact.
(2) experimental data measures：
The I-V characteristic curve in every a pair of electrodes in Fig. 5 is measured, it is respectively I to take the electric current under same voltage U=1V1,
I2......In；Data measured such as table 1.
Table 1：Size of current between two electrodes under Different electrodes width
(3) it calculates and assesses：
Data are fitted, fitting expression result isIntend
Curve such as Fig. 6 is closed, a, b, c numerical value are as follows：
Therefore ρ can further be calculatedC, RS1, RS2And ImaxNumerical value it is as follows：
The present embodiment obtains electrical parameter detailed in GaN epitaxy piece Ohmic contact as a result, including each section square electricity
Resistance and ohmic contact resistance.In addition, it also can obtain maximum allowed current numerical value knot between Ohm contact electrode using the present invention program
Fruit.From experimental data as can be seen that the square resistance of material is with contacting under electrode between semi-conducting material Ohm contact electrode
The square resistance of square bar material differs greatly, and is not available for approximately equal processing.It, certainly will band if calculated using conventional model
Carry out big calculating error.
The key problem in technology point of the present invention is in scheme that each electrode spacing of semiconductor Ohmic contact is identical, and electrode width is not
Together, new more accurate ohmic contact resistance computation model is thus brought.
Electrode lay-out is parallel construction in technical solution of the present invention, can also be expanded into loop configuration, is equally applicable to this
Invention model.Technical solution of the present invention is applicable in all semiconductors, is not limited to certain type semiconductor, does not limit semiconductor ginseng
Number；All types electrode ohmic contact is applicable in, is not limited to certain manufacture craft, metal types, Annealing Scheme etc..
Claims (1)
1. a kind of semi-conducting electrode ohmic contact resistance parameter extracting method, which is characterized in that
The first step：It designs and makes electrode
It is all d, of different size, respectively W to design in semiconductor material surface and make a series of spacing1,W2……WnElectrode
It is right；
Second step：Electric current-electrode width relationship modeling
When carrying out I-V tests to n-th pair of adjacent electrode, resistance is represented by：
Rn=2RMn+2RCn+RSFormula (1)
Wherein RMnFor in n-th pair of electrode, itself resistance of single electrode metal, because metal resistance value itself is much smaller than in formula 1
Two afterwards, its influence is ignored in this model；RCnFor in n-th pair of electrode, single electrode metal lower contact resistance summation, including
Golden-half contact interface resistance and electrode interface lower semiconductor contact resistance two parts；RSThe semi-conductor electricity between contact electrode
Resistance, electrode spacing d is remained unchanged in this model, is definite value；The wherein voltage u (x) and electric current i (x) of metal lower contact
The regularity of distribution defers to following substantially uniform equation for transmission line：
It can be obtained by solving above-mentioned equation, and by boundary condition substitution general solution：
And then obtain all-in resistance：
Wherein RS1And RS2Semiconductor square resistance and contact base part semiconductor square resistance respectively between contact electrode；ρC
Ohmic contact resistance for the contact of gold-half；L is electrode length；D is electrode to spacing；WnFor n-th of electrode centering single electrode
Width；
When carrying out electricity I-V tests to n-th pair of electrode, electric current InWith WnRelationship be expressed as：
Third walks：Core parameter obtains
For formula (5), if by InIt is considered as dependent variable, WnIt is considered as independent variable, other uncorrelated amounts are accordingly to be regarded as constant, and U is measures electricity
Pressure, l is electrode length, can be brought directly to numerical value, then can be expressed as functional relation：
Wherein correspondence is as follows：
In addition, by drawing the function, it is known that there are maximum values, i.e. I for the functionmax；Take coth (WnB) during ≈ 1, I is maximum, i.e.,As long as a, tri- unknown quantitys of b, c can be determined by mathematically simple Function Fitting in this way；
I-V characteristic curve in measuring per a pair of electrodes, it is respectively I to take the electric current under same voltage U1, I2......In；It paints
The electric current I of system at this voltagenWith electrode widths WnImage In-Wn, and nonlinear function is fitted according to drawing imageTwo of which relevant parameter, for U to measure voltage, l is electrode length, is directly substituted into；Profit
With the various Common softwares of Excel, Matlab, thus matched curve can be calculated directly so as to obtain the numerical value of unknown parameter a, b, c
Obtain target electrical parameter ρC, RS1, RS2And ImaxNumerical value, correspondence is presented below：
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711344193.2A CN108170910B (en) | 2017-12-15 | 2017-12-15 | Method for extracting ohmic contact resistance parameters of semiconductor electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711344193.2A CN108170910B (en) | 2017-12-15 | 2017-12-15 | Method for extracting ohmic contact resistance parameters of semiconductor electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108170910A true CN108170910A (en) | 2018-06-15 |
| CN108170910B CN108170910B (en) | 2023-07-11 |
Family
ID=62525475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711344193.2A Active CN108170910B (en) | 2017-12-15 | 2017-12-15 | Method for extracting ohmic contact resistance parameters of semiconductor electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108170910B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113884765A (en) * | 2020-07-02 | 2022-01-04 | 昆山微电子技术研究院 | Method, device, equipment and storage medium for measuring ohmic contact ratio contact resistance |
| WO2022241960A1 (en) * | 2021-05-20 | 2022-11-24 | 长鑫存储技术有限公司 | Method and device for testing contact resistance |
| US11703531B2 (en) | 2021-05-20 | 2023-07-18 | Changxin Memory Technologies, Inc. | Contact resistor test method and device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102565600A (en) * | 2012-02-21 | 2012-07-11 | 电子科技大学 | Method for determining and testing ohmic contact between black silicon material and metal electrode |
| US20120242356A1 (en) * | 2011-03-24 | 2012-09-27 | Toshiba America Electronic Components, Inc. | Specific contact resistivity measurement method, semiconductor device for specific contact resistivity measurement, and method for manufacturing the same |
| CN106684011A (en) * | 2016-12-28 | 2017-05-17 | 西安电子科技大学 | Method for testing square resistance of ohmic contact region |
| CN107248496A (en) * | 2017-06-07 | 2017-10-13 | 西安电子科技大学 | The modification method of ohmic contact regions square resistance |
-
2017
- 2017-12-15 CN CN201711344193.2A patent/CN108170910B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120242356A1 (en) * | 2011-03-24 | 2012-09-27 | Toshiba America Electronic Components, Inc. | Specific contact resistivity measurement method, semiconductor device for specific contact resistivity measurement, and method for manufacturing the same |
| CN102565600A (en) * | 2012-02-21 | 2012-07-11 | 电子科技大学 | Method for determining and testing ohmic contact between black silicon material and metal electrode |
| CN106684011A (en) * | 2016-12-28 | 2017-05-17 | 西安电子科技大学 | Method for testing square resistance of ohmic contact region |
| CN107248496A (en) * | 2017-06-07 | 2017-10-13 | 西安电子科技大学 | The modification method of ohmic contact regions square resistance |
Non-Patent Citations (4)
| Title |
|---|
| YUE PAN等: "Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure", vol. 8923, pages 1 - 5 * |
| 李鸿渐等: "测量计算金属-半导体接触电阻率的方法", 半导体技术, vol. 2008, no. 02, pages 155 - 159 * |
| 许世峰等: "光导开关欧姆接触电阻率测量方法研究", vol. 39, no. 07, pages 929 - 933 * |
| 陈筑等: "等间距平行电极接触电阻测试法", vol. 35, no. 11, pages 2087 - 2092 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113884765A (en) * | 2020-07-02 | 2022-01-04 | 昆山微电子技术研究院 | Method, device, equipment and storage medium for measuring ohmic contact ratio contact resistance |
| WO2022241960A1 (en) * | 2021-05-20 | 2022-11-24 | 长鑫存储技术有限公司 | Method and device for testing contact resistance |
| US11703531B2 (en) | 2021-05-20 | 2023-07-18 | Changxin Memory Technologies, Inc. | Contact resistor test method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108170910B (en) | 2023-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108170910A (en) | A kind of semi-conducting electrode ohmic contact resistance parameter extracting method | |
| US11953531B2 (en) | Sense resistor and method for forming same | |
| TW200532213A (en) | Semiconductor IC with function of current measurement and power supply device utilizing the same | |
| CN103063921A (en) | Testing device for testing wafers for electronic circuits and related method | |
| CN103713252B (en) | The detection method of a kind of GaN base semiconductor device ohmic contact high voltage reliability | |
| Kökbudak et al. | On the determination of the contact resistivity for passivating contacts using 3D simulations | |
| CN205194698U (en) | Integrated circuit | |
| CN106684011B (en) | The method for testing ohmic contact regions square resistance | |
| CN105977291A (en) | Semiconductor device and method for forming same | |
| US8168497B2 (en) | Low-resistance electrode design | |
| CN107341305B (en) | Schottky diode accurate modeling method based on millimeter wave ultra-low power application | |
| CN115394776A (en) | Integrated device, electronic equipment and manufacturing method of integrated device | |
| CN105445636A (en) | Semiconductor testing circuit and method for detecting conductive properties of tested piece | |
| Liu et al. | In-situ investigation of the impact of externally applied vertical stress on III-V bipolar transistor | |
| CN105445638B (en) | A kind of device and its detection method in situ for detecting avalanche effect | |
| CN102175919B (en) | The extracting method of resistance model of metal silicide film | |
| CN113791276A (en) | Method for testing resistance value of resistor | |
| Gudmundsson et al. | Error propagation in contact resistivity extraction using cross-bridge Kelvin resistors | |
| Li et al. | A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology | |
| Oe et al. | 10 MΩ quantum Hall array device | |
| CN206194470U (en) | High power integrated resistor ware based on taN film | |
| Torkhov et al. | A compact model of planar Schottky diode with anode pin in a form of air bridge with whisker | |
| CN110690169B (en) | Integrated circuit processing technology | |
| Batchu et al. | The impact of Ag particle size and rapid thermal processing belt speed on contact resistance of a silicon solar cell | |
| US9178025B2 (en) | Low-resistance electrode design |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |