CN108155212A - Display device - Google Patents
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- Publication number
- CN108155212A CN108155212A CN201711257791.6A CN201711257791A CN108155212A CN 108155212 A CN108155212 A CN 108155212A CN 201711257791 A CN201711257791 A CN 201711257791A CN 108155212 A CN108155212 A CN 108155212A
- Authority
- CN
- China
- Prior art keywords
- layer
- area
- substrate
- display device
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
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- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/35—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
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Abstract
A kind of display device is disclosed, which minimize substantially the damage of substrate and carbonization, which includes:Substrate, including the first area set in a first direction and second area and including along at least one layer of second direction setting intersected with first direction;Display layer, in the first area of substrate;Building blocks of function, on the display layer in the first area of substrate;And driving unit, in the second area of substrate, driving unit is configured to driving display layer.At least one layer includes the first end at the first area of substrate and the second end at the second area of substrate, and first end has the surface roughness bigger than the surface roughness of the second end.
Description
This application claims the 10-2016- submitted on December 2nd, 2016 in Korean Intellectual Property Office (KIPO)
The priority and equity of No. 0163674 South Korea patent application, the disclosure of the South Korea patent application are all included by quoting
In this.
Technical field
The various aspects of exemplary embodiment of the present invention are related to a kind of display device and a kind of side for manufacturing the display device
Method.
Background technology
Display device includes the multiple pixels being arranged in the region limited by black matrix or pixel confining layer.Display device
Example can include liquid crystal display (" LCD ") device, such as Organic Light Emitting Diode (" OLED ") display device luminous member
Part display device and electrophoretic display apparatus.
Above- mentioned information disclosed in the background technology part is only used for enhancing the understanding to the background of present inventive concept, therefore
It can include the information for not forming the prior art.
Invention content
An exemplary embodiment of the present invention relates to a kind of display devices of the carbonization with substrate reduce or minimum
And its manufacturing method.
Accoding to exemplary embodiment, display device includes:Substrate has first area adjacent to each other in a first direction
And second area, the substrate are included in the multiple layers stacked in the second direction intersected with first direction, the multiple layer
First layer has the first end at the first area of substrate and the second end at the second area of substrate, the
One end has the surface roughness bigger than the surface roughness of the second end;Display layer, in the first area of substrate;Work(
Energy component, on the display layer in the first area of substrate;And driver, in the second area of substrate, driver
It is configured to driving display layer.
The length in a second direction of first end can be longer than the length in a second direction of the second end.
The first layer of the multiple layer can have first surface and second surface facing with each other, in first surface and the
Among two surfaces, first surface can be closer to building blocks of function.The first surface of first end and the first layer of the multiple layer
Between angle can be more than the second end and the multiple layer the first surface of first layer between angle.
The first layer of the multiple layer can be base layer, and the second layer of the multiple layer can be heap in a second direction
The protective layer being stacked on base layer.Among base layer and protective layer, base layer can be closer to display layer.
Substrate can further include adhesive layer between base layer and protective layer.
Protective layer can have the slot at the second area of substrate.
Slot can be positioned at protective layer in the surface farthest apart from base layer among the surface of protective layer.
Building blocks of function can include at least one of polarizer and touch screen panel.
Display device can further include the protective layer being located on building blocks of function, and building blocks of function in a second direction
It can be at the first area of substrate between protective layer and substrate.
Display device can further include the bonding between substrate and building blocks of function at the first area of substrate
Layer.
According to another embodiment of the invention, the method for manufacturing display device includes:The shape at the first area of substrate
Into display layer, the substrate has first area and second area adjacent with first area in a first direction, the substrate
It is included in the multiple layers stacked in the second direction intersected with first direction;At first area it is basad offer building blocks of function with
It is stacked with display layer;And by irradiating laser beam along the cutting line extended around the periphery of first area and second area
So as to cut substrate and building blocks of function.The laser beam of part corresponding with first area periphery that is being applied to cutting line have than
It is applied to the high intensity of the intensity of the laser beam of the part corresponding with the periphery of second area of cutting line.
The portion corresponding with the periphery of first area of cutting line can be applied to the power of about 15W to about 25W
Point laser beam be irradiated to substrate, and can be applied to cutting line with the power of about 3W to about 10W with the secondth area
The laser beam of the corresponding part in periphery in domain is irradiated to substrate.
It can be to have the pulse mode of the frequency of about 400Hz that laser beam is irradiated to substrate.
Laser beam can have about 22 μm of spot definition.
Foregoing teachings are merely illustrative, and are not intended to and are limited in any way.In addition to described above illustrative
Aspect, except exemplary embodiment and feature, further aspect, exemplary embodiment and feature by referring to accompanying drawing and under
The detailed description in face will be apparent.
Description of the drawings
Exemplary embodiments of the present invention will be described in detail referring to the drawings, and more complete understanding of the invention will become more
Add it is clear, in the accompanying drawings:
Fig. 1 is the perspective view for showing display device accoding to exemplary embodiment;
Fig. 2 is the sectional view along the line I-I' interceptions of Fig. 1;
Fig. 3 is the sectional view along the line II-II' interceptions of Fig. 1;
Fig. 4 is the sectional view along the line III-III' interceptions of Fig. 1;
Fig. 5 is the plan view for showing to include a pixel in the display layer of display device shown in Fig. 1;
Fig. 6 is the sectional view along the line I-I' interceptions of Fig. 5;
Fig. 7 is the view for the state that the display device for showing to show in Fig. 1 is bending;
Fig. 8 is the perspective view for showing display device according to another exemplary embodiment;
Fig. 9 is the sectional view along the line I-I' interceptions of Fig. 8;And
Figure 10 to Figure 20 is the definition graph for the method for showing manufacture display device accoding to exemplary embodiment.
Specific embodiment
The exemplary embodiment that hereinafter the present invention is more fully described with reference to the accompanying drawings now.Although the present invention can be with
It is changed in various ways and including several exemplary embodiments, but specific exemplary embodiment is shown in the drawings
And it will mainly be described in the description.However, the scope of the present invention is not limited to exemplary embodiment, but should be solved
It is interpreted as including all changes, equivalent and replacement within the spirit and scope of the present invention.
In the accompanying drawings, in order to understand and be easy to describe, the thickness of multiple layer and region is shown in the way to enlarge.When
Layer, region or plate be referred to as " " another layer, region or plate " on " when, the layer, region or plate can directly another layer,
It or can there are middle layer, intermediate region or intermediate plates between them on region or plate.When layer, region or plate are referred to as
" directly existing " another layer, region or plate " on " when, middle layer, intermediate region or intermediate plate can be not present between them.
In addition, when layer, region or plate are referred to as " " another layer, region or plate " lower section ", the layer, region or plate can directly exist
There may be below another layer, region or plate or between them middle layer, intermediate region or intermediate plate.When layer, region
Or plate is referred to as " directly existing " another layer, region or during plate " lower section ", and middle layer, middle area can be not present between them
Domain or intermediate plate.
For ease of description, may be used herein " ... lower section ", " ... under ", " below ", " ... on
Side " and the spatially relative terms such as " above " describe an element as illustrated in the drawing or component and another element or component
Between relationship.It will be appreciated that other than orientation discribed in figure, spatially relative term is also intended to be made including device
With or operation in different direction.For example, in the case that device shown in the figure is reversed, positioned at another device " lower section "
Or " under " device can place " " another device " top ".Therefore, illustrative term " in ... lower section " can be with
Both positions including following position and above.Device can also position in the other directions, therefore, spatially relative term
It can differently be explained according to orientation.
Through the whole instruction, when element is referred to as " being connected to " another element, which " can be directly connected to
To " another element, another element or " electrical connection " be connected indirectly to another element and at it by intermediary element
Between be placed in intermediary element.It will be further appreciated that when term " comprising ", "comprising" and its deformation etc. are in this specification
When middle, illustrate there are the feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of one
Or more other feature, entirety, step, operation, element, component and/or their group.
Although will be appreciated that can describe various elements using term " first ", " second ", " third " etc. herein,
But these elements should not be limited by these terms.These terms are only used to distinguish an element with another element.
Therefore, in the case where not departing from introduction in this, " first element " discussed below can be referred to as " second element " or " the
Three elements ", and " second element " and " third element " can be similarly named.
As used herein, unless the context clearly indicates otherwise, otherwise "one" and " one kind " of singulative
Intention includes plural form." can with " be related to that " of the invention is one or more in addition, use when describing the embodiment of the present invention
A embodiment ".
Unless otherwise defined, all terms (including technical terms and scientific terms) as used herein have and the hair
Bright those skilled in the art the identical meaning of normally understood meaning.It will be further appreciated that unless in this explanation
It is clearly limited in book, otherwise term (term such as defined in common dictionary) should be interpreted as having and in related field
Their meaning under background consistent meaning, and will not be explained with the meaning for idealizing or excessively formalizing.
In order to more clearly describe the various aspects of exemplary embodiment of the present invention, it is convenient to omit described below exemplary
Unnecessary some aspects or the part for those of ordinary skill in the art understand specification of embodiment, and whole
Same reference numeral represents same element in a specification.
Hereinafter, display device and the method for manufacturing display device will be described referring to figs. 1 to Figure 20.
Fig. 1 is the perspective view for showing display device accoding to exemplary embodiment, and Fig. 2 is intercepted along the line I-I' of Fig. 1
Sectional view, Fig. 3 are along the sectional view of the line II-II' interceptions of Fig. 1, and Fig. 4 is the sectional view along the line III-III' interceptions of Fig. 1.
As shown in fig. 1, display device 1000 accoding to exemplary embodiment can include substrate 100, display layer 222,
Polarizer 400 and driving unit (for example, driver) 188.
As shown in Figure 2, substrate 100 includes being arranged in the direction parallel with X-axis (below (for example, adjacent to each other)
In, " X-direction ") on first area A1 and second area A2.That is, first area A1 and second area A2 are arranged in
On the X-Y plane of substrate 100.
As shown in Figure 1 to Figure 3, display layer 222 and polarizer 400 are arranged in the first area A1 of substrate 100.First
Region A1 is non-welding disking area, and non-welding disking area can include display area and non-display area.
As shown in Figure 1 to Figure 3, display layer 222 is between substrate 100 and polarizer 400.Display layer 222 includes more
A pixel, each pixel include light-emitting component and the pixel circuit for driving light-emitting component.
As shown in Figure 1, Figure 2 with shown in Fig. 4, driving unit 188 is arranged at the second area A2 of substrate 100.Second area
A2 is welding disking area.Driving unit 188 is configured to the pixel of driving display layer 222.Driving unit 188 includes the integrated electricity of driving
Road.
Substrate 100 can include setting (for example, being located at along the direction (hereinafter, " Z-direction ") parallel with Z axis
Or be stacked in substrate 100) at least one layer.For example, as shown in fig. 1, substrate 100 can be included in the Z-axis direction
Protective layer 111a (hereinafter, " the first protective layer "), adhesive layer 111b (hereinafter, " the first adhesive layer ") and the base of stacking
Body layer 111.Z axis intersects with X-axis and Y-axis.For example, Z axis and X-axis and Y-axis square crossing (or intersecting).
First protective layer 111a of substrate 100 is located at the lower part in the Z-axis direction of base layer 111.Such as Fig. 1 and Fig. 2
Shown in, the first protective layer 111a can have slot 11.For example, the first protective layer 111a is with adjacent with the first adhesive layer 111b
The upper surface 31 of (for example, contact) and in face of the lower surface of upper surface 31 32, slot 11 is located at the lower surface of the first protective layer 111a
In 32.Slot 11 is located in the second area A2 of substrate 100.Slot 11 can be stacked with driving unit 188 or can not be single with driving
Member 188 it is stacked (for example, can it is stacked with driving unit 188 in the Z-axis direction or can in the Z-axis direction not with driving unit
188 is stacked).
First protective layer 111a can include polyethylene terephthalate (PET) or the material comprising PET.
First adhesive layer 111b is between the first protective layer 111a and base layer 111.First adhesive layer 111b makes matrix
111 and first protective layer 111a of layer is attached to each other (such as bonding).
First adhesive layer 111b can include acryl or the material comprising acryl.
Base layer 111 is located on the first adhesive layer 111b (for example, being in direct contact the first adhesive layer 111b).Base layer 111
Including upper surface 51 facing with each other in the Z-axis direction and lower surface 52.The upper surface 51 of base layer 111 and 222 phase of display layer
Neighbour, the lower surface 52 of base layer 111 are adjacent with the first adhesive layer 111b.
Base layer 111 can be the transparent insulating layer for including glass or transparent plastic.For example, base layer 111 can include
Polyether sulfone (PES), makrolon (PC), such as(Delaware State Wilmington city E.I.De Pont De Nemours
The registered trademark of and Company) polyimides (PI), polyethylene terephthalate (PET), poly- naphthalenedicarboxylic acid second two
Alcohol ester (PEN), polyacrylate (PAR) and/or fibre reinforced plastics (FRP) etc..
It is included in the layer in substrate 100 including the first end at the first area A1 of substrate 100 and positioned at substrate
The second end at 100 second area A2.For example, the first protective layer 111a includes being located at the first end at the A1 of first area
The 11a and the second end 11b at second area A2.
Be included in the first end of at least one of substrate 100 layer can have it is bigger than the surface roughness of the second end
Surface roughness.For example, first end can have the shaggy surface than the second end.For example, such as Fig. 2 and Fig. 3
Shown in, the first end 11a of the first protective layer 111a can have the roughness bigger than the roughness of the second end 11b.
In addition, the layer being included in substrate 100 includes the surface faced, and a surface in the surface is (under
Wen Zhong, " lower surface ") it is positioned to than another surface (hereinafter, " upper surface ") in the surface apart from polarizer 400
Distance it is remote.In such exemplary embodiment, protrusion positioned at described at least one layer lower surface with it is described at least one
At the part that the first end of layer crosses.For example, as shown in Figures 2 and 3, the first protective layer 111a include it is facing with each other under
Surface 32 and upper surface 31, the part that protrusion 601 is located at the lower surface 32 of the first protective layer 111a and first end 11a crosses
At (hereinafter, " marginal portion ").Protrusion 601 protrudes in the Z-axis direction from marginal portion.In such exemplary embodiment
In, protrusion 601 can be protruded further in X-direction and/or Y direction from marginal portion.As shown in figs. 2 and 4, exist
No protrusion at the second end 11b of first protective layer 111a.
Because first end 11a has protrusion 601, first end 11a and the second end 11b have different length
Degree.The length of first end 11a is length in the Z-axis direction.Similarly, the length of the second end 11b is in the Z-axis direction
Length.First end 11a can be longer than the second end 11b (for example, can have longer length).For example, such as institute in Fig. 2
Show, the first protective layer 111a includes being located at the first end 11a at the A1 of first area and the second end at second area A2
Portion 11b.In such exemplary embodiment, of first end 11a than the first protective layer 111a of the first protective layer 111a
Two end 11b long (for example, with longer length).For example, the length of first end 11a is longer than the length of the second end 11b.
In addition, as described above, the layer being included in substrate 100 includes lower surface and upper surface, upper surface and first end
Between angle be different from angle between upper surface and the second end.For example, the angle between upper surface and first end is big
Angle between upper surface and the second end.As another example, as shown in Figure 2, the upper table of the first protective layer 111a
Upper surface of the angle, θ 1 (hereinafter, " first angle ") more than the first protective layer 111a between face 31 and first end 11a
Angle, θ 2 (hereinafter, " second angle ") between 31 and the second end 11b.When second angle θ 2 is 90 degree, first jiao
It can be obtuse angle (for example, angle more than 90 degree) to spend θ 1.
In such exemplary embodiment, the part being located in the A1 of first area of upper surface 31 can be first angle
The reference surface of θ 1, the part being located in second area A2 of upper surface 31 can be the reference surfaces of second angle θ 2.For example,
First angle θ 1 can be the angle between the part being located in the A1 of first area of first end 11a and upper surface 31, second
Angle, θ 2 can be the angle between the second end 11b and the part being located in second area A2 of upper surface 31.
In the exemplary embodiment, being included in other components in substrate 100 can have and above-mentioned first protective layer
111a's constructs substantially the same construction.
For example, as shown in Fig. 2 to Fig. 4, it is included in the base layer 111 in substrate 100 and includes being located at the A1 of first area
First end 13a and the second end 13b at second area A2, the first end 13a of base layer 111 can have than
The big surface roughness of the surface roughness of the second end 13b of base layer 111.
In addition, the edge that the lower surface 52 of first end 13a and base layer 111 that protrusion 603 is located at base layer 111 cross
Part is located, therefore, the first end 13a of base layer 111 than base layer 111 the second end 13b long (for example, having than matrix
The length of the length length of the second end 13b of layer 111).
In addition, as described above, the base layer 111 being included in substrate 100 includes lower surface 52 and upper surface 51, base layer
Angle between 111 upper surface 51 and the first end 13a of base layer 111 can be more than upper surface 51 and the base of base layer 111
Angle between the second end 13b of body layer 111.
In addition, as shown in Fig. 2 to Fig. 4, it is included in the first adhesive layer 111b in substrate 100 and includes being located at first area
First end 12a at A1 and the second end 12b, the first end 12a of the first adhesive layer 111b at second area A2
There can be the surface roughness bigger than the surface roughness of the second end 12b.
Protrusion 602 is located at the first end 12a of the first adhesive layer 111b and the lower surface 42 of the first adhesive layer 111b crosses
At the edge part, therefore, the second end 12bs long of the first end 12a than the first adhesive layer 111b of the first adhesive layer 111b
(for example, the length with the second end 12b than the first adhesive layer 111b long length).
In addition, as described above, the first adhesive layer 111b being included in substrate 100 includes lower surface 42 and in face of lower surface
42 upper surface 41, the angle between the first end 12a of the 41 and first adhesive layer 111b of upper surface of the first adhesive layer 111b
Angle between the second end 12b of 41 and first adhesive layer 111b of upper surface that can be more than the first adhesive layer 111b.
As shown in Figures 1 and 2, such as the building blocks of function of polarizer 400 is located at the first area A1 of substrate 100.Partially
The device 400 that shakes is located in substrate 100 in the Z-axis direction.Polarizer 400 can include the adhesive layer 444b stacked along Z-direction
(hereinafter, " the second adhesive layer "), polarization layer 444 and protective layer 444a (hereinafter, " the second protective layer ").
Second adhesive layer 444b is located between the first area A1 of substrate 100 and polarization layer 444.For example, the second adhesive layer
444b is located between the first area A1 of base layer 111 and polarization layer 444.
Polarization layer 444 is between the second adhesive layer 444b and the second protective layer 444a.
Fig. 5 is the plan view for showing to include a pixel in the display layer of display device shown in Fig. 1, and Fig. 6 is
The sectional view intercepted along the line I-I' of Fig. 5.
As shwon in Figures 5 and 6, pixel PX includes light-emitting component 210 and pixel circuit unit 130.
Pixel circuit unit 130 includes switching thin-film transistor (" TFT ") 10, driving TFT 20 and capacitor 80.
Pixel PX can be located at the region limited by gate line 151, data line 171 and common power cord 172 (for example, pixel
Region) in.
Pixel PX includes light-emitting component 210 and the pixel circuit unit 130 for driving light-emitting component 210.
Light-emitting component 210 can include pixel electrode 211, luminescent layer 212 and common electrode 213.In such exemplary reality
It applies in example, light-emitting component 210 can be organic illuminating element.
Pixel circuit unit 130 is located on the base layer 111 of substrate 100.For example, switch TFT 10,20 and of driving TFT
Capacitor 80 is located on base layer 111.Pixel circuit unit 130 is configured to the luminescent layer 212 of driving light-emitting component 210.
Show pixel circuit unit 130 and the detailed construction of light-emitting component 210 in Fig. 5 and Fig. 6, but exemplary implementation
Example is not limited to the structure shown in Fig. 5 and Fig. 6.Pixel circuit unit 130 and light-emitting component 210 can be formed as having in ability
Field technique personnel can easily change in the range of various suitable structures.
With reference to Fig. 5, a pixel PX is depicted as including two TFT and capacitors, but exemplary embodiment is not
It is limited to this.In the exemplary embodiment, a pixel PX can include three or more TFT and two or more capacitances
Device, and can have the various suitable structures for further comprising respective signal wire.
As used herein, term " pixel " refers to the minimum unit for showing image, and can be transmitting feux rouges
Red pixel, emit green light green pixel or emit blue light blue pixel.
Base layer 111 can be the transparent insulating layer for including glass or transparent plastic.For example, base layer 111 can include
Polyether sulfone (PES), makrolon (PC), such as(Delaware State Wilmington city E.I.De Pont De Nemours
The registered trademark of and Company) polyimides (PI), polyethylene terephthalate (PET), poly- naphthalenedicarboxylic acid second two
Alcohol ester (PEN), polyacrylate (PAR) and/or fibre reinforced plastics (FRP) etc..
Buffer layer 120 can be arranged on base layer 111.Buffer layer 120 reduces or substantially prevents undesirable ingredient
Through its infiltration, make surface planarisation below and can include for reduce or prevent infiltration and/or for making it is flat
The suitable material of change.For example, buffer layer 120 can include silicon nitride (SiNx) layer, silica (SiO2) layer and/or nitrogen oxidation
Silicon (SiOxNy) layer.However, it in other embodiments, can be buffered based on the type and its process conditions of base layer 111 to omit
Layer 120.
Switching semiconductor layer 131 and driving semiconductor layer 132 are arranged on buffer layer 120.Switching semiconductor layer 131 and drive
Dynamic semiconductor layer 132 can include polysilicon layer, amorphous silicon layer and/or including such as indium gallium zinc oxide (IGZO) and/or indium
The oxide semiconductor of zinc tin oxide (IZTO).For example, the driving semiconductor layer 132 shown in Fig. 6 includes polysilicon layer
When, driving semiconductor layer 132 is adulterated including the channel region undoped with impurity and the p+ being formed on the opposite side of channel region
Source region and p+ impure drain regions.In such exemplary embodiment, the n-type impurity of such as boron (B) may be used as dopant from
Son, B2H6It is typically used as boron (B) dopant ion.These impurity can change according to the type of TFT.
Driving TFT 20 accoding to exemplary embodiment uses the p-channel metal-oxide semiconductor (MOS) for including n-type impurity
(PMOS) TFT, but exemplary embodiment is without being limited thereto.In other embodiments, driving TFT 20 can use n-channel metal
Oxide semiconductor (NMOS) TFT or complementary metal oxide semiconductor (CMOS) TFT.
Gate insulating layer 140 is arranged on switching semiconductor layer 131 and driving semiconductor layer 132.Gate insulating layer 140 can
To include tetraethyl orthosilicate (TEOS), silicon nitride (SiNx) and/or silica (SiO2).For example, gate insulating layer 140 can be with
With double-layer structure, the double-layer structure includes the SiN of the thickness with about 40nm sequentially stackedxLayer and with about
The TEOS layers of the thickness of 80nm.
Grid wiring including gate electrode 152 and 155 is arranged on gate insulating layer 140.Grid wiring further includes grid
Line 151, the first condenser armature 158 and other wirings.In addition, gate electrode 152 and 155 is set as and semiconductor layer 131 and 132
(for example, channel region of semiconductor layer 131 and 132) or all stacked at least partially.Forming semiconductor layer 131 and 132
During technique, when the source region 136 of semiconductor layer 131 and 132 and drain region 137 are doped with impurity, gate electrode 152 and 155 is basic
On prevent channel region impurity.
Gate electrode 152 and 155 and the first condenser armature 158 are arranged on substantially same layer and including substantially phase
Same metal material.Gate electrode 152 and 155 and the first condenser armature 158 can include molybdenum (Mo), chromium (Cr) and/or tungsten
(W)。
The insulating intermediate layer 160 being stacked with gate electrode 152 and 155 is arranged on gate insulating layer 140.It is exhausted similar to grid
Edge layer 140, insulating intermediate layer 160 can include silicon nitride (SiNx), silica (SiOx), tetraethyl orthosilicate (TEOS) etc. or
By silicon nitride (SiNx), silica (SiOx), the formation such as tetraethyl orthosilicate (TEOS), but exemplary embodiment is without being limited thereto.
It is arranged on insulating intermediate layer 160 including source electrode 173 and 176 and the wiring of the data of drain electrode 174 and 177.
Data wiring further includes data line 171, altogether power cord 172, the second condenser armature 178 and other wirings.In addition, source electrode 173
With 176 and the contact openings by being limited in gate insulating layer 140 and insulating intermediate layer 160 respectively of drain electrode 174 and 177
(for example, contact hole) is connected to the source region 136 of semiconductor layer 131 and 132 and drain region 137.
In this way, switch TFT 10 includes switching semiconductor layer 131, switch gate electrode 152, switch source electrode 173 and switch
Drain electrode 174.TFT 20 is driven to include driving semiconductor layer 132, driving gate electrode 155, driving source electrode 176 and driving electric leakage
Pole 177.The construction of TFT 10 and TFT 20 are not limited to the above embodiments, and can be modified to those skilled in the art
The various suitable structures that can be readily apparent that.
Capacitor 80 includes the first condenser armature 158 and the second condenser armature 178, and insulating intermediate layer 160 is between it
Between.
Switch TFT 10 may be used as being configured to selection pixel to perform luminous switch element.Switch gate electrode 152
It is connected to gate line 151.Switch source electrode 173 is connected to data line 171.Switch drain pole 174 is detached with switch source electrode 173
(for example, separating) and it is connected to the first condenser armature 158.
TFT 20 is driven to apply driving power to pixel electrode 211, this causes the organic illuminating element 210 in selected pixel
Luminescent layer 212 shine.Driving gate electrode 155 is connected to the first condenser armature 158.Drive 176 and second capacitor of source electrode
Common power cord 172 is each connected in plate 178.Driving drain electrode 177 has been connected to by contact openings (for example, contact hole)
The pixel electrode 211 of machine light-emitting component 210.
Using above structure, switch TFT 10 is driven, and be applied to data by the grid voltage for being applied to gate line 151
The data voltage of line 171 is transferred to driving TFT 20.With being applied to the common voltage of driving TFT 20 from common power cord 172 and from opening
The equal voltage of the difference between the data voltage that TFT 10 is transmitted is closed to be stored in capacitor 80, and with being stored in capacitor 80
In the corresponding electric current of voltage by the way that TFT 20 is driven to flow to organic illuminating element 210 so that organic illuminating element 210 can be sent out
Light.
Planarization layer 165 cover by the wiring of single mask patterned data (for example, data line 171, altogether power cord 172,
Source electrode 173 and 176, drain electrode 174 and 177 and the second condenser armature 178).Planarization layer 165 is arranged on insulating intermediate layer
On 160.
Planarization layer 165 provides flat surfaces to improve the luminous efficiency for the organic illuminating element that will be formed on.It is flat
Smoothization layer 165 can include polyacrylate resin, epoxy resin, phenolic resin, polyamide, polyimide resin, no
Saturated polyester resin, polyparaphenylene's resinoid (for example, phenyl ether or poly (phenylene ether) resin), polyparaphenylene's sulfide resin and/
Or benzocyclobutene (BCB).
The pixel electrode 211 of organic illuminating element 210 is arranged on planarization layer 165.Pixel electrode 211 is by being limited to
Contact openings (for example, contact hole) in planarization layer 165 are connected to drain electrode 177.
Part or all of pixel electrode 211 is arranged in the regional transmission (or light-emitting zone) of pixel PX.For example, picture
Plain electrode 211 is set to correspond to the regional transmission of the pixel limited by pixel confining layer 190 (for example, being arranged on regional transmission
In).Pixel confining layer 190 can include the resin of such as polyacrylate resin and/or polyimide resin.
Luminescent layer 212 is arranged in regional transmission on pixel electrode 211, and common electrode 213 is arranged on pixel confining layer 190
On luminescent layer 212.
Luminescent layer 212 includes low molecular weight organic material or high molecular weight organic materials.Hole injection layer HIL and hole pass
At least one of defeated layer HTL can be further disposed between pixel electrode 211 and luminescent layer 212, and electron transfer layer
At least one of ETL and electron injecting layer EIL can be further disposed between luminescent layer 212 and common electrode 213.
Pixel electrode 211 and common electrode 213 can be formed as transmission electrode, transflector electrode or reflecting electrode.
Transparent conductive oxide (" TCO ") can be used for forming transmission electrode.TCO can include tin indium oxide (ITO), oxygen
Change indium zinc (IZO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc oxide (ZnO) or their mixture.
Such as magnesium (Mg), silver-colored (Ag), golden (Au), calcium (Ca), lithium (Li), chromium (Cr), aluminium (Al) and copper (Cu) metal or
Their alloy can be used for forming transflector electrode and reflecting electrode.In such exemplary embodiment, electrode is transflection
Emitting or reflection-type depend on the thickness of electrode.Transflector electrode can have about 200nm or smaller thickness, reflection electricity
Can extremely have about 300nm or the thickness of bigger.Reduce with the thickness of transflector electrode, light transmittance and resistance increase.With
The thickness increase of transflector electrode, light transmittance declines.
In addition, transflector electrode and reflecting electrode, which can have, includes metal layer and stacking comprising metal or metal alloy
The multilayered structure of tco layer on the metal layer.
Pixel PX can be configured on the direction of pixel electrode 211 and emit light on the direction of common electrode 213
Bilateral emission type.In such exemplary embodiment, pixel electrode 211 and common electrode 213 can be formed as transmission electrode
Or transflector electrode.
Containment member 250 is arranged in common electrode 213.Containment member 250 can be included comprising glass or transparent plastic
Transparent insulating layer.In addition, containment member 250 can have the thin-film packing structure for including inorganic layer and organic layer.Such
In exemplary embodiment, inorganic layer and organic layer can be alternately stacked.In other embodiments, multiple inorganic layers and multiple have
Machine layer can be alternately stacked.
Fig. 7 is the view for the state that the display device for showing to show in Fig. 1 is bending.
As shown in Figure 7, display device 1000 can be bending.For example, display device 1000 can be relative to outermost
Slot 11 in protective layer has curved shape (for example, display device 1000 can be bent about slot 11).
Fig. 8 is the perspective view for showing display device according to another exemplary embodiment, and Fig. 9 is cut along the line I-I' of Fig. 8
The sectional view taken.
As shown in figs. 8 and 9, the substrate 100 of display device 1000 can include one layer (hereinafter, " substrate ")
(for example, substrate 100 can be individual layer).
Substrate 100 includes the first end 11a at the first area A1 of substrate 100 and second positioned at substrate 100
The second end 11b at the A2 of region.
Substrate 100 has the surface faced, and the surface (hereinafter, " lower surface 32 ") in the surface is fixed
Position obtains more remote than another distance of surface (hereinafter, " upper surface 31 ") apart from polarizer 400 in the surface.In this way
Exemplary embodiment in, protrusion 601 is located at the part that the lower surface 32 of substrate 100 and the first end 11a of substrate 100 cross
Place.For example, as shown in figs. 8 and 9, substrate 100 includes lower surface 32 facing with each other and upper surface 31, protrusion 601 is located at
At the part (hereinafter, " marginal portion ") that the lower surface 32 of substrate 100 crosses with first end 11a.Protrusion 601 is in Z axis
It is protruded on direction from marginal portion.In such exemplary embodiment, protrusion 601 can be further in X-direction and/or Y
It is protruded in axis direction from marginal portion.As shown in figs. 8 and 9, no protrusion at the second end 11b of substrate 100.
Because first end 11a includes protrusion 601, first end 11a and the second end 11b have different length
Degree.The length of first end 11a is length in the Z-axis direction.Similarly, the length of the second end 11b is in the Z-axis direction
Length.First end 11a can be longer than the second end 11b (for example, can have longer than the length of the second end 11b long
Degree).
In addition, as described above, substrate 100 includes lower surface 32 and upper surface 31, between upper surface 31 and first end 11a
Angle be different from angle between upper surface 31 and the second end 11b.For example, between upper surface 31 and first end 11a
Angle, θ 1 is more than the angle, θ 2 between upper surface 31 and the second end 11b.
Figure 10 to Figure 20 is the definition graph for the method for showing manufacture display device accoding to exemplary embodiment.
First, as shown in Figure 10 and Figure 11, parent panel 700 is prepared.Figure 11 is the section view along the line I-I' interceptions of Figure 10
Figure.
In Fig. 10, in order to make it easy to understand, showing multiple first area A11 and multiple secondth areas on parent panel 700
Domain A22, but second area A22 and first area A11 is not presented on parent panel 700 actually.
A pair of of the first area A11 adjacent to each other and second area A22 of parent panel 700 correspond to shown in above-mentioned Fig. 1
The first area A1 of display device 1000 and second area A2.The first area A11 of parent panel 700 can be more than above-mentioned display
The first area A1 of device 1000, and the second area A22 of parent panel 700 can be more than the second of above-mentioned display device 1000
Region A2.
As shown in Figure 11, parent panel 700 includes carrier layer 600, substrate 100 and display layer 222.
Carrier layer 600 includes being located at adhesive layer 666a (hereinafter, " third adhesive layer ") and the protection of 100 lower section of substrate
666 (hereinafter, " third protective layer ") of layer.Third adhesive layer 666a is located at 666 and first protective layer 111a of third protective layer
Between.
Then, as shown in Figure 12, female polarizer 800 is manufactured.Female polarizer 800 has multiple openings 88 (for example, multiple
Hole).Opening 88 can have quadrangle form.In such exemplary embodiment, in order to substantially prevent polarizer 400 with
Second area A2 is stacked, the opening 88 of female polarizer 800 due to the alignment error between female polarizer 800 and parent panel 700
The second area A22 of parent panel 700 can be more than.For example, as shown in Figure 13, the 88 length L1 of being open can be more than the secondth area
The length L2 of domain A22.As used herein, the 88 length L2 of length L1 and second area A2 of being open is in the Y-axis direction
Length.In addition, the width W1 of opening 88 can be more than the width W2 of second area A2.As used herein, be open 88 width
The width W2 of W1 and second area A2 is length in the X-axis direction.
Then, as shown in figure 13 and figure 14, female polarizer 800 is attached to parent panel 700.For example, such as institute in Figure 14
Show, female polarizer 800 includes the second adhesive layer 444b, 444 and second protective layer 444a of polarization layer, and such exemplary
In embodiment, female polarizer 800 is attached to parent panel 700 by the second adhesive layer 444b.As used herein, by parent panel
700 are attached to mutual structure with female polarizer 800 is defined as female attachment panel 900.
Then, as shown in Figure 15, division work is performed by the way that mother's attachment panel 900 is divided into multiple unit panels
Skill.In some embodiments, female attachment panel 900 is cut by the laser beam 384a and 384b irradiated from laser equipment 382.
Ultraviolet (UV) picosecond laser equipment can be used as laser equipment 382.
As shown in Figure 15, it is irradiated in the Z-axis direction from female attachment panel 900 underneath towards mother's attachment panel 900
Laser beam 384a and 384b.Therefore, the laser beam 384a and 384b for being irradiated to female attachment panel 900 pass through parent panel 700, then
Across female polarizer 800.
As shown in Figure 15, the laser beam 384a and 384b of female attachment panel 900 is irradiated to along with around phase each other
The closed-loop shaped of adjacent first area A1 and second area A2 (for example, periphery extension around first area A1 and second area A2)
The cutting line 15 (hereinafter, " the first cutting line ") of shape propagates (or mobile), therefore, by the first cutting line 15 around (for example,
In the first cutting line 15) part with mother attachment panel 900 detach.As used herein, it will be detached with mother's attachment panel 900
Part be defined as unit panel 950 (see, for example, Figure 16).
By dividing technique, multiple unit panels 950 are obtained from a female attachment panel 900.
In the exemplary embodiment, because the opening 88 in female polarizer 800 is more than the second area A2 of parent panel 700,
So the part along the first cutting line 15 of female attachment panel 900 has different thickness.For example, as shown in Figure 15, the
One cutting line 15 it is attached with mother with the part 15a (hereinafter, " first part's cutting line ") of the contour convergence of first area A1
Parent panel 700 and the female polarizer 800 for panel 900 are stacked, and the contour convergence with second area A2 of the first cutting line 15
Part 15b (hereinafter, " second part cutting line ") and the parent panel 700 of female attachment panel 900 it is stacked, therefore, along
Female attachment panel 900 of first part cutting line 15a cuttings has female attachment surface than being cut along second part cutting line 15b
The big thickness of the thickness of plate 900.
The laser beam 384a (hereinafter, " first laser beam ") for being irradiated to (or along) first part cutting line 15a can
And have contrast be mapped to (or along) second part cutting line 15b laser beam 384b (hereinafter, " second laser beam ") it is high
Intensity.For example, along female first laser of the first part cutting line 15a irradiations of attachment panel 900 with opposite high intensity
Beam 384a, and along second laser beam of the second part cutting line 15b irradiations with relative low strength of female attachment panel 900
384b.For example, when using UV picosecond laser equipment as laser equipment 382 as described above, it can be with about 15W to about
The power illumination first laser beam 384a of 25W, can be with the power illumination second laser beam 384b of about 3W to about 10W.
It is each to have about 400Hz's in first laser beam 384a and second laser beam 384b in such exemplary embodiment
The pulse mode of frequency is irradiated, and the pulse width (for example, pulse duration) with about 15ps.In exemplary reality
It applies in example, the spot definition that can each have about 22 μm in first laser beam 384a and second laser beam 384b.
The length of the end of unit panel 950 changes according to the intensity of laser beam.For example, unit panel 950 by having
Have the end of the first laser beam 384a cutting of opposite high intensity with than unit panel 950 by the with relative low strength
The length of the length length of the end of dual-laser beam 384b cuttings.As an example, as shown in Fig. 2 and Figure 16, the first protective layer
111a includes being located at the first end 11a at the A1 of the first area and the second end 11b at second area A2.Such
In exemplary embodiment, the first end 11a of the first protective layer 111a has the second end 11b's than the first protective layer 111a
The length (for example, the length of first end 11a is longer than the length of the second end 11b) of length length.
As another example, third protective layer 666 includes being located at first end 14a at the A1 of first area, positioned at the
The second end 14b and lower surface 62 facing with each other and upper surface 61 at two region A2.In such exemplary embodiment
In, protrusion 604 is located at the lower surface 62 of third protective layer 666 and first end 14a crosses part (hereinafter, " edge part
Point ") at.Protrusion 604 protrudes in the Z-axis direction from marginal portion.In such exemplary embodiment, protrusion 604 can be into
One step protrudes in X-direction and/or Y direction from marginal portion.As shown in Figure 16, the second of third protective layer 666
No protrusion at the 14b of end.Due to protrusion 604, the first end 14a of third protective layer 666 has than third protective layer 666
The length of the length length of the second end 14b.Similarly, third adhesive layer 666a includes being located at the first end at the A1 of first area
Portion, the second end at second area A2 and lower surface and upper surface facing with each other.In such exemplary implementation
In example, the first end and the second end of third adhesive layer 666a can have the first end with above-mentioned third protective layer 666
The substantially the same shape of the shape of 14a and the second end 14b.
In addition, the inclination angle of the end of unit panel 950 changes according to the intensity of laser beam.For example, unit panel 950
By having the angle between the end of the first laser beam 384a of opposite high intensity cuttings and reference planes to be more than unit panel 950
By with relative low strength second laser beam 384b cut end and reference planes between angle.As more detailed
Example, as shown in Fig. 2 and Figure 16, the angle, θ 1 between the upper surface 31 of the first protective layer 111a and first end 11a is more than
Angle, θ 2 between the upper surface 31 of first protective layer 111a and the second end 11b.
In the exemplary embodiment, the upper surface 61 of third protective layer 666 and the first end 14a of third protective layer 666
Between angle be less than third protective layer 666 upper surface 61 and third protective layer 666 the second end 14b between angle.
For example, the angle between the upper surface 61 of third protective layer 666 and the first end 14a of third protective layer 666 can be acute angle,
And the angle between the upper surface 61 of third protective layer 666 and the second end 14b of third protective layer 666 can be about 90
Degree.Similarly, the inclination angle of the first end of third adhesive layer 666a and the second end can be with the first end of third protective layer 666
Portion 14a is substantially the same with the inclination angle of the second end 14b.
In addition, the surface roughness of the end of unit panel 950 changes according to the intensity of laser beam.For example, elemental area
Plate 950 by the end that the first laser beam 384a with opposite high intensity is cut with than unit panel 950 by with phase
The surface roughness big to the surface roughness of the end of low intensive second laser beam 384b cuttings.As showing in more detail
Example, as shown in Fig. 2 and Figure 16, the first end 11a of the first protective layer 111a can have thicker than the surface of the second end 11b
The big surface roughness of rugosity.Similarly, the surface roughness of the first end of third adhesive layer 666a and the second end can be with
It is substantially the same with the surface roughness of the first end 14a of third protective layer 666 and the second end 14b respectively.
By above-mentioned division technique, multiple unit panels 950 have been manufactured from a female attachment panel 900.Figure 17 is to show
The plan view of one in multiple unit panels 950.Each unit panel 950 include substrate 100 as example shown in fig. 2,
Display layer 222 and polarizer 400.
Then, as shown in Figure 18, processing technology is performed, so as to which unit panel 950 is processed as desired size and is set
Meter.In processing technology, pass through the laser beam 384a and 384b cutter unit panel 950 irradiated from laser equipment 382.Such as Figure 18
Shown in, in the Z-axis direction laser beam 384a and 384b are irradiated from unit panel 950 underneath towards unit panel 950.Therefore,
The laser beam 384a and 384b for being irradiated to unit panel 950 pass through substrate 100, then pass through polarizer 400.
As shown in Figure 18 and Figure 19, the laser beam of unit panel 950 is irradiated to along with around adjacent to each other
The closed loop shape of one region A1 and second area A2 (for example, periphery extension around first area A1 and second area A2) are cut
Secant 16 (hereinafter, " the second cutting line ") propagate, therefore, unit panel 950 by the second cutting line 16 around (for example,
In the second cutting line 16) part and the part for being located at the outside of the second cutting line 16 of unit panel 950 be separated from each other.Such as exist
What this was used, by the part (for example, inboard portion of unit panel 950) surrounded by the second cutting line 16 of unit panel 950
It is defined as cell processing panel 980.
Second cutting line 16 can have fillet, and in such exemplary embodiment, cell processing panel 980 can
With with fillet.
In the exemplary embodiment, because polarizer 400 is not located in the second area A2 of cell processing panel 980, institute
There is different thickness with the cell processing panel 980 cut out along the second cutting line 16.For example, the second cutting line 16 with
The part 16a (hereinafter, " first part's cutting line ") of the contour convergence of one region A1 is stacked with polarizer 400, and second
Cutting line 16 with the part 16b (hereinafter, " second part cutting line ") of the contour convergence of second area A2 not with polarization
Device 400 is stacked, therefore, has along the cell processing panel 980 of first part cutting line 16a cuttings and is more than along second part
The thickness of the thickness of the cell processing panel 980 of cutting line 16b cuttings.
The first laser beam 384a for being irradiated to first part cutting line 16a can be mapped to second part cutting line with contrasting
The high intensity of the intensity of the second laser beam 384b of 16b.For example, the first part cutting line 16a along cell processing panel 980
First laser beam 384a of the irradiation with opposite high intensity, and along the second part cutting line 16b of cell processing panel 980
Second laser beam 384b of the irradiation with relative low strength.
The length of the end of cell processing panel 980 changes according to the intensity of laser beam.For example, cell processing panel
980 by the end that the first laser beam 384a with opposite high intensity is cut with than cell processing panel 980 by with
The length of the length length of the end of the second laser beam 384b cuttings of relative low strength.As more detailed example, such as Fig. 2 and figure
Shown in 19, the first protective layer 111a is including the first end 11a at the A1 of first area and at second area A2
The second end 11b.In such exemplary embodiment, the first end 11a of the first protective layer 111a has than the first protection
The length of the length length of the second end 11b of layer 111a.For example, length of the length of first end 11a than the second end 11b
It is long.
In addition, the inclination angle of the end of cell processing panel 980 changes according to the intensity of laser beam.For example, cell processing
Panel 980 it is single by having the angle between the end and reference planes that the first laser beam 384a of opposite high intensity cuts to be more than
Angle between the end cut by the second laser beam 384b with relative low strength of member processing panel 980 and reference planes
Degree.As more detailed example, as shown in Fig. 2 and Figure 19, the upper surface 31 and first end 11a of the first protective layer 111a it
Between angle, θ 1 be more than angle, θ 2 between the upper surface 31 of the first protective layer 111a and the second end 11b.
In addition, the surface roughness of the end of cell processing panel 980 changes according to the intensity of laser beam.It is for example, single
The end cut by the first laser beam 384a with opposite high intensity of member processing panel 980 is with than cell processing panel
The big surface roughness of surface roughness of 980 end cut by the second laser beam 384b with relative low strength.Make
For more detailed example, as shown in Fig. 2 and Figure 19, the first end 11a of the first protective layer 111a can have than second end
The big surface roughness of the surface roughness of portion 11b.Similarly, the table of the first end of third adhesive layer 666a and the second end
Surface roughness can be substantially the same with the surface roughness of the first end 14a and the second end 14b of third protective layer 666.
Then, as shown in Figure 20, carrier layer 600 is made to be detached with cell processing panel 980.For example, from cell processing face
Plate 980 removes third protective layer 666 and third adhesive layer 666a.
Then, slot 11 is limited in the first protective layer 111a of cell processing panel 980.For example, slot 11 is limited at
In the lower surface 32 of one protective layer 111a.The slot 11 can be limited by laser beam.
Then, driving unit 188 is installed at second area A2 on cell processing panel 980.
Technique in this way, cell processing panel 980 have the structure of display device 1000 as shown in Figure 1.
In the exemplary embodiment, element polarizer can be used to replace above-mentioned female polarizer 800.Such exemplary
In embodiment, cutting technique is performed to the parent panel 700 for lacking female polarizer 800 shown in Figure 15.For example, to institute in Figure 10
The parent panel 700 shown, which performs, divides technique.It is substantially the same with the laser cutting parameter described above for Figure 15 to divide technique.
However, in such exemplary embodiment, because being attached to parent panel 700, first area A1 without female polarizer 800
In parent panel 700 have the thickness substantially the same with the thickness of the parent panel 700 in second area A2.Therefore, along mother
The laser beam of the cutting line irradiation of panel 700 can have uniform or substantially uniform intensity.For example, along with parent panel
The laser beam of the corresponding first part's cutting line irradiation of 700 first area A1 can have with along the with parent panel 700
The substantially the same intensity of the intensity of the laser beam of two region A2 corresponding second part cutting lines irradiation.Then, when will be multiple
When unit panel 950 is detached with parent panel 700, element polarizer is respectively attached to unit panel 950.Element polarizer adheres to
To the first area A1 of unit panel 950.For example, element polarizer is not adhered to the second area A2 of unit panel 950.As
Above-mentioned female polarizer 800, element polarizer include the second adhesive layer 444b, 444 and second protective layer 444a of polarization layer.In this way
Element polarizer accompanying by the unit panel 950 that arrives it is substantially the same with the unit panel 950 shown in above-mentioned Figure 17.Pass through
It is above-mentioned about the technique shown in Figure 18 and Figure 19 by accompanying by such element polarizer to unit panel 950 process by a definite date
The shape of prestige.Then, as shown in Figure 20, carrier layer 600 is removed from finished unit panel 950.Then, load is being eliminated
Above-mentioned slot 11 and driving unit 188 are formed in the cell processing panel 980 of body layer 600 or by above-mentioned slot 11 and driving unit
188 are set to the cell processing panel 980 for eliminating carrier layer 600.
In the exemplary embodiment, it can use touch screen panel that above-mentioned polarizer 400 is replaced to be used as building blocks of function.Separately
Outside, both polarizer 400 and touch screen panel can be used as building blocks of function.In such exemplary embodiment, touch screen
Panel is located on polarizer.
Manufacturing method accoding to exemplary embodiment can be adapted for liquid crystal display (" LCD ") device or electrophoresis showed dress
It puts.For example, selectively include polarizer or touch screen panel in non-welding disking area (that is, first area) as described above
LCD device or electrophoretic display apparatus can be processed by the laser beam with varying strength.
As described above, accoding to exemplary embodiment, provide display device and the method for manufacturing display device so that display
Device has different thickness due to being attached to the building blocks of function of non-welding disking area between welding disking area and non-welding disking area.
For example, welding disking area has the thickness bigger than the thickness of non-welding disking area.
According to one or more exemplary embodiments, in the laser technology for being applied to display device or it is applied to parent panel
Cutting technique in, the laser beam of opposite high intensity is irradiated to substrate corresponding with non-welding disking area and by relative low strength
Laser beam be irradiated to substrate corresponding with welding disking area.Therefore, substrate can be easily cut in non-welding disking area, and
Can reduce the carbonization of substrate in welding disking area and to the damage of substrate or substantially make in welding disking area the carbonization of substrate and
The damage of substrate is minimized.
For example, because non-welding disking area is relatively thick, non-welding disking area has high resistance to laser beam.Therefore,
Although the laser beam with opposite high intensity is irradiated to non-welding disking area, can also reduce at non-welding disking area substrate and
The carbonization and damage of building blocks of function substantially minimize the carbonization of substrate and building blocks of function at non-welding disking area and damage.
Furthermore, it is possible to by having the laser beam of opposite high intensity easily to cut substrate and building blocks of function in non-welding disking area.Separately
On the one hand, because welding disking area is relatively thin, welding disking area there is low resistance to laser beam and due to its thickness and
It is easy to be cut by the laser beam with relative low strength.In such a case, it is possible to reduce weldering due to low intensive laser beam
The carbonization and damage of substrate in disk area minimize the carbonization of substrate in welding disking area and damage.
It is common for this field although the present invention has shown and described with reference to exemplary embodiment of the present invention
Technical staff will be apparent that, not depart from the feelings of the spirit and scope of the present invention that are limited such as claim and its equivalent
Under condition, the various changes in formal and details can be carried out to it.
Claims (10)
1. a kind of display device, the display device includes:
Substrate, including the first area set in a first direction and second area and including being handed over along with the first direction
At least one layer of the second direction setting of fork;
Display layer, in the first area of the substrate;
Building blocks of function, on the display layer in the first area of the substrate;And
Driving unit, in the second area of the substrate, the driving unit is configured to drive the display layer,
Wherein, at least one layer is including the first end at the first area of the substrate and positioned at the base
The second end at the second area at bottom, and
The first end has the surface roughness bigger than the surface roughness of the second end.
2. display device according to claim 1, wherein, the ratio of length in this second direction of the first end
The length in this second direction of the second end is long.
3. display device according to claim 1, wherein, the angle between the first end and first surface is more than institute
State the angle between the second end and the first surface, wherein, described at least one layer of first surface facing with each other and
The first surface among second surface is closer to the building blocks of function.
4. display device according to claim 1, wherein, at least one layer includes setting along the second direction
Base layer and protective layer, and
The base layer is than the protective layer closer to the display layer.
5. display device according to claim 4, wherein, at least one layer is further included positioned at the base layer and institute
State the adhesive layer between protective layer.
6. display device according to claim 4, wherein, the protective layer has positioned at secondth area of the substrate
Slot in domain.
7. display device according to claim 6, wherein, the slot is located among the surface of the protective layer described in distance
In the farthest surface of base layer.
8. display device according to claim 1, wherein, the building blocks of function is included in polarizer and touch screen panel
At least one.
9. display device according to claim 8, wherein, the polarizer includes the guarantor set in this second direction
Sheath and polarization layer, and
The polarization layer is between the protective layer and the first area of the substrate.
10. display device according to claim 9, wherein, the polarization layer further includes described positioned at the substrate
Adhesive layer between one region and the polarizer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0163674 | 2016-12-02 | ||
KR1020160163674A KR20180063936A (en) | 2016-12-02 | 2016-12-02 | Display device and method for fabricating the same |
Publications (2)
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Cited By (1)
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CN108983507A (en) * | 2018-07-26 | 2018-12-11 | 京东方科技集团股份有限公司 | Sealing structure and preparation method thereof, display device |
Families Citing this family (14)
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CN108241226B (en) * | 2016-12-23 | 2021-08-24 | 群创光电股份有限公司 | Display device |
CN107919364B (en) * | 2017-11-17 | 2021-05-11 | 京东方科技集团股份有限公司 | Display substrate mother board, display substrate, manufacturing method and display device |
KR102457975B1 (en) * | 2017-11-29 | 2022-10-24 | 삼성디스플레이 주식회사 | Display panel and manufacturing method thereof |
KR102504133B1 (en) * | 2018-02-20 | 2023-02-28 | 삼성디스플레이 주식회사 | Display apparatus and the fabrication method thereof |
CN108735785B (en) * | 2018-05-21 | 2020-05-19 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and manufacturing method thereof |
KR102580292B1 (en) | 2018-05-29 | 2023-09-19 | 삼성디스플레이 주식회사 | Display device, method for fabricating the device and laser processing apparatus for fabricating the device |
KR102633169B1 (en) * | 2018-09-10 | 2024-02-06 | 삼성디스플레이 주식회사 | Method for manufacturing display device |
CN111048549B (en) * | 2018-10-11 | 2022-08-16 | 上海和辉光电股份有限公司 | Display panel, display device and preparation method of display panel |
KR20200121948A (en) * | 2019-04-16 | 2020-10-27 | 삼성디스플레이 주식회사 | Display device and method of manufacturing the same |
KR20200133099A (en) * | 2019-05-17 | 2020-11-26 | 삼성디스플레이 주식회사 | Display module, display apparatus including the same, and method of manufacturing the display apparatus |
CN112306272A (en) * | 2019-07-25 | 2021-02-02 | 上海和辉光电有限公司 | Touch mother board, touch panel and touch display device |
KR20210127848A (en) | 2020-04-14 | 2021-10-25 | 삼성디스플레이 주식회사 | Display device and manufacturing method of display device |
CN112086036B (en) * | 2020-09-24 | 2021-08-24 | Tcl华星光电技术有限公司 | Display panel, manufacturing method thereof and display device |
CN114187850B (en) * | 2021-12-17 | 2022-09-20 | 合肥达视光电科技有限公司 | Film-attached display screen with high permeability and production process |
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CN108983507B (en) * | 2018-07-26 | 2022-04-15 | 京东方科技集团股份有限公司 | Sealing structure, manufacturing method thereof and display device |
Also Published As
Publication number | Publication date |
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US20180159087A1 (en) | 2018-06-07 |
US10326113B2 (en) | 2019-06-18 |
US10541388B2 (en) | 2020-01-21 |
US20190259978A1 (en) | 2019-08-22 |
EP3330782A1 (en) | 2018-06-06 |
EP3330782B1 (en) | 2019-10-16 |
CN108155212B (en) | 2022-12-23 |
KR20180063936A (en) | 2018-06-14 |
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