CN108149207B - Target assembly, sputtering system and monitoring method for consumption condition of target layer - Google Patents
Target assembly, sputtering system and monitoring method for consumption condition of target layer Download PDFInfo
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- CN108149207B CN108149207B CN201810011237.8A CN201810011237A CN108149207B CN 108149207 B CN108149207 B CN 108149207B CN 201810011237 A CN201810011237 A CN 201810011237A CN 108149207 B CN108149207 B CN 108149207B
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 86
- 238000012544 monitoring process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000001179 sorption measurement Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000013077 target material Substances 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims description 73
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910021536 Zeolite Inorganic materials 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002808 molecular sieve Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000013259 porous coordination polymer Substances 0.000 claims description 3
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims description 3
- 239000010457 zeolite Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a target assembly, a sputtering system and a monitoring method for consumption conditions of a target layer, relates to the technical field of display, and can be used for timely grasping the consumption degree of the target layer and preventing the target layer from being used excessively or insufficiently. The target assembly comprises: the target material layer is arranged on the surface of the substrate; the target assembly further comprises: an adsorption layer embedded in the target layer or disposed between the substrate and the target layer, the adsorption layer configured to adsorb a predetermined gas.
Description
Technical Field
The invention relates to the technical field of display, in particular to a target assembly, a sputtering system and a monitoring method for consumption conditions of a target layer.
Background
The sputtering (Sputter) process is a film formation process in which target atoms are bombarded by a high-energy ion beam and deposited on a substrate. As the amount of target material used increases, the target material is gradually lost. If the consumed target exposes the back plate with the target fixed below, atoms on the back plate are sputtered out and then deposited on the substrate to be formed, and the film deposited on the substrate is affected. Furthermore, if the back plate is also sputtered through, the equipment will be broken down by the high energy ion beam due to the discharge sputtering still performed in the sputtering chamber, which will cause a serious impact on the equipment.
Therefore, the service life of the target is critical to equipment Preventive Maintenance (PM) planning, and the target needs to be replaced in time.
However, the target lifetime set in the existing production process is only obtained through production experience, and due to differences among different devices, the use time of the set target to be replaced can only be used as a reference, so that a large error exists, and the situation that the target is used excessively or is not used sufficiently often occurs in the actual production process.
Disclosure of Invention
In view of this, embodiments of the present invention provide a target assembly, a sputtering system and a method for monitoring consumption of a target layer, which can timely grasp the consumption of the target layer and prevent the target layer from being used excessively or insufficiently.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, an embodiment of the present invention provides a target assembly, including: the target material layer is arranged on the surface of the substrate; the target assembly further comprises: an adsorption layer embedded in the target layer or disposed between the substrate and the target layer, the adsorption layer configured to adsorb a predetermined gas.
Optionally, the target layer comprises a first surface remote from the substrate; the first surface is divided into a preset area, and the part of the target material layer corresponding to the preset area is a part which is easy to be sputtered through; the orthographic projection of the preset area on the substrate is completely overlapped with the orthographic projection of the adsorption layer on the substrate.
Optionally, the adsorption layer is composed of an adsorption medium, and the particle size of the adsorption medium is less than 3 nm.
Optionally, the adsorption layer is composed of an adsorption medium, and the adsorption medium includes at least one of a porous coordination polymer, a carbon nanotube, and a zeolite molecular sieve.
Optionally, the predetermined gas is hydrogen.
Optionally, the substrate includes: a back plate and a binding layer; the binding layer is located between the backing plate and the target layer.
In a second aspect, embodiments of the present invention provide a sputtering system, which includes a sputtering apparatus; the sputtering apparatus includes: a chamber; a target assembly as described in any of the above disposed within the chamber; and the gas flow monitoring unit is configured to monitor the flow change of the preset gas introduced into the cavity.
As an optional manner, the sputtering system further includes: and the alarm unit is configured to give an alarm when the flow change of the preset gas monitored by the gas flow monitoring unit exceeds a reference value.
As another optional mode, the sputtering system further includes: a control unit configured to control the sputtering apparatus to terminate sputtering when the change in the flow rate of the preset gas monitored by the gas flow rate monitoring unit exceeds a reference value.
In a third aspect, an embodiment of the present invention provides a method for monitoring consumption of a target layer in a sputtering system, where the sputtering system includes any one of the foregoing sputtering systems, and the method includes: switching on a power supply, and introducing the preset gas into the cavity to enable the sputtering device to start sputtering; starting the gas flow monitoring unit to monitor the flow change of the preset gas introduced into the cavity; causing the sputtering apparatus to terminate sputtering when the flow rate variation exceeds a reference value.
Based on this, according to the target assembly provided by the embodiment of the present invention, the adsorption layer having selective adsorption on the preset gas in the chamber during sputtering is embedded in the preset thickness in the target layer, or is disposed between the substrate and the target layer, and in the sputtering process of the target assembly, after the target layer is consumed to the preset thickness or at least partially completely consumed, the adsorption layer exposed on the surface of the target layer adsorbs the preset gas in the chamber, so that the flow rate of the gas is changed sharply, and exceeds the reference value of the normal change of the gas during sputtering, and can be monitored by the gas flow rate monitoring unit in the sputtering system, so that the consumption degree of the target layer can be grasped in time, and the situation that the target layer is used excessively or insufficiently is prevented.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic side view of a target assembly according to embodiment 1 of the present invention;
fig. 2 is a schematic side view of a target assembly according to embodiment 1 of the present invention;
fig. 3 is a schematic front structural view of a target assembly according to embodiment 1 of the present invention;
fig. 4 is a schematic side view of a target assembly according to embodiment 1 of the present invention.
Reference numerals:
10-a target assembly;
11-a substrate; 110-a back-plate; 110 a-a locating hole; 110 b-a positioning element; 110 c-a water outlet; 110 d-water inlet; 111-binding layer;
12-a target layer; 120-a first surface; 12 a-a preset area;
13-an adsorption layer;
14-electrodes.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be noted that, unless otherwise defined, all terms (including technical and scientific terms) used in the embodiments of the present invention have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
For example, the terms "first," "second," and the like as used in the description and in the claims of the present patent application do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. Terms of orientation or positional relationship indicated by "upper/upper", "lower/lower", "row/row direction", and "column/column direction" and the like are terms based on the orientation or positional relationship shown in the drawings, and are only for the purpose of simplifying the description of the technical solution of the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, cannot be construed as limiting the present invention. For example, in some cases, embodiments involving "row direction" may be implemented in the case of "column direction" and so on, and vice versa. It is also within the scope of the claims to rotate or mirror the versions described in this patent by 90 °.
Example 1
As shown in fig. 1 and 2, embodiment 1 of the present invention provides a target assembly 10, where the target assembly 10 includes: a substrate 11, a target layer 12 provided on a surface of the substrate 11; the target assembly 10 further comprises: and an adsorption layer 13 embedded in the target layer 12 or disposed between the substrate 11 and the target layer 12, the adsorption layer 13 being configured to adsorb a predetermined gas.
Here, as shown in fig. 1, the adsorption layer 13 may be embedded in the target layer 12, i.e., provided in the target layer 12. The predetermined thickness of the adsorption layer 13 embedded in the target layer 12, i.e., the distance from the surface of the adsorption layer 13 away from the substrate 11 to the outer surface of the target layer 12, can be set according to the specific sputtering requirements of the target assembly 10.
Thus, during the sputtering process of the target assembly 10, when the target layer 12 on the surface of the target assembly 10 is consumed to a predetermined thickness, the adsorption layer 13 embedded in the target layer 12 is exposed on the surface of the target layer 12. The material forming the adsorption layer 13 has selective adsorption to the preset gas (which may be one or more gases) in the working gas introduced into the chamber during the sputtering process, so that the preset gas in the chamber can be adsorbed, the flow of the gas is rapidly changed and exceeds the reference value of the normal change of the gas during the sputtering process, and the gas can be monitored by a gas flow monitoring unit (Qulee) in the sputtering system, so that the consumption degree of the target material layer can be timely grasped, and the situation that the target material layer is used excessively or is not used sufficiently can be prevented.
Referring to fig. 2, the adsorption layer 13 may be disposed between the substrate 11 and the target layer 12, so that, when the target layer 12 originally covering the adsorption layer 13 is sputtered and consumed, the adsorption layer 13 disposed between the substrate 11 and the target layer 12 is exposed on the surface of the target layer 12, and further adsorbs a predetermined gas in the chamber, resulting in a rapid change in the flow rate of the gas, which exceeds a reference value of a normal change of the gas during sputtering, and can be monitored by a gas flow monitoring unit (qlee) in the sputtering system, so that the consumption degree of the target layer can be timely grasped, and the situation that the target layer is used excessively or is not used sufficiently can be prevented.
Here, when the target layer 12 is sputtered, the working gas introduced into the chamber includes hydrogen, and the hydrogen is easy to be selectively adsorbed due to the small molecular size of the hydrogen, so the predetermined gas may be hydrogen.
It should be noted that, since the sputtering consumption degrees of different regions of the target layer 12 are not completely the same in the actual sputtering process, the specific region of the adsorption layer 13 embedded in the target layer 12 or the specific region located between the substrate 11 and the target layer 12 may be specifically set according to the needs, for example, may correspond to a local region or an entire region of the target layer 12, which is not limited in embodiment 1 of the present invention.
Since the adsorption medium constituting the adsorption layer 13 is not electrically conductive, the adsorption layer 13 is not sputtered by a high-energy ion beam in a sputtering system, i.e., is not sputtered onto the target substrate, but falls in the chamber when exposed to the outside, and does not adversely affect the film layer sputtered on the target substrate.
Based on this, with the target assembly 10 provided in embodiment 1 of the present invention, the adsorption layer 13 that selectively adsorbs the preset gas in the chamber during sputtering is embedded in the preset thickness of the target layer 12, or is disposed between the substrate 11 and the target layer 12, during sputtering of the target assembly 10, when the target layer 12 is consumed to the preset thickness or is completely consumed at least by a part, the adsorption layer 13 exposed on the surface of the target layer 12 adsorbs the preset gas in the chamber, which causes a rapid change in the flow rate of the gas, exceeding a reference value of a normal change of the gas during sputtering, and can be monitored by a gas flow rate monitoring unit (quale) in the sputtering system, so that the consumption degree of the target layer, i.e., the service life of the target, can be grasped in time, and the situation that the target layer is used excessively or is used insufficiently is prevented.
In the display technology field, the Film layer on the TFT (thin Film transistor) substrate is mostly formed by a sputtering method, so that the target assembly 10 provided in embodiment 1 of the present invention can effectively prevent the target layer from being used excessively, so that the target layer is fully used, and simultaneously prevent impurity atoms generated when the substrate 11 is sputtered from entering the Film layer, thereby ensuring that the TFT performance is not affected by the impurity atoms, and improving the product yield.
The specific arrangement of the adsorption layer 13 can be flexibly arranged according to the specific sputtering degree of the surface of the target material layer 12, that is, the sputtering degrees of the surface of the target material layer 12 bombarded by the high-energy ion beam are not completely the same, so that the surface of the target material layer 12 has the region with the fastest consumption in the sputtering process. Based on the consumption situation, the adsorption layer 13 may be specifically disposed in the region where the consumption of the target layer 12 is fastest, so as to avoid the breakdown of the fastest consumption part of the target layer 12, and thus, the monitoring efficiency of the adsorption layer 13 is highest; meanwhile, the area of the adsorption layer 13 can be reduced, and the cost of the target assembly 10 can be reduced.
Referring to fig. 1 or fig. 2, the specific setting manner is as follows: the target layer 12 includes a first surface 120 remote from the substrate 11; the first surface 120 is divided into a predetermined area 12a, and a portion of the target layer 12 corresponding to the predetermined area 12a is a portion that is easily sputtered through; the orthographic projection of the preset region 12a on the substrate 11 completely overlaps with the orthographic projection of the adsorption layer 13 on the substrate 11.
Here, the target material layer 12 is generally called a long strip shape, and the predetermined region 12a is generally both end portions of the upper side and the lower side of the target material layer 12 as shown in fig. 1 or fig. 2 in accordance with production experience.
The specific material of the adsorption layer 13 may be composed of an adsorption medium having a particle size of less than 3 nm; the adsorption medium comprises at least one of porous coordination polymer, carbon nano tube and zeolite molecular sieve.
As shown in fig. 3 and 4, the substrate 11 may specifically include: a back plate 110 and a binding layer 111 (not shown in fig. 3); the bonding layer 111 is located between the backing plate 110 and the target layer 12.
The back plate is generally made of a copper material with high thermal conductivity, i.e., a back copper plate is formed, and a high-purity target material and the back copper plate are bonded together by using a Bonding technology, i.e., a material layer such as indium is a Bonding layer. Specific materials can be adopted in the prior art, and the back copper plate and the indium material provided in embodiment 1 of the present invention are only examples.
Further, since the target layer 12 is a material to be sputtered, and is usually used as a cathode, in order to make the target layer 12 have a certain negative potential, the target assembly 10 may further include an electrode 14 disposed on the surface of the backing plate 110, as shown in fig. 3. Since the backing plate 110 is typically made of a metal material such as copper, electrical connection between the electrode 14 and the target layer 12 can be achieved.
The substrate is further provided with a positioning hole 110a penetrating the backing plate 110, and the target assembly 10 can be fixed in the chamber by a positioning member 110b (e.g., a positioning screw, only shown in fig. 4) penetrating the positioning hole 110a (only shown in fig. 3) for sputtering.
Here, fig. 3 only illustrates 8 positioning holes 110a, and the number and distribution thereof can be flexibly adjusted according to the specific size of the back plate 110, which is not limited in embodiment 1 of the present invention.
Further, referring to fig. 3 and 4, the surface of the back plate 110 is further provided with a water outlet 110c and a water inlet 110d, and cooling circulating water can be introduced into the back plate 110, so that the temperature of the target layer 12 can be prevented from being too high in normal use and in the discharging process.
Wherein the example ways of water ingress and egress are illustrated by dashed arrows in figure 4.
Example 2
On the basis, embodiment 2 of the present invention further provides a sputtering system, which includes a sputtering apparatus; wherein, sputtering device includes: a chamber; a target assembly 10 as described in example 1 above disposed within the chamber; a gas flow monitoring unit configured to monitor a change in flow of a predetermined gas introduced into the chamber.
The number of target assemblies 10 may be multiple (e.g., 12) and are fixed in the chamber side by side.
Thus, when the target layer 12 on the surface of the target assembly 10 is consumed to a predetermined thickness or at least partially completely consumed, the adsorption layer 13 exposed on the surface of the target layer 12 adsorbs the predetermined gas in the chamber, so that the flow rate of the gas changes sharply, and exceeds the reference value of the normal change of the flow rate of the gas in the sputtering process, and the change can be monitored by a gas flow rate monitoring unit (Qulee) in the sputtering system, so that the consumption degree of the target layer can be grasped in time, and the situation that the target layer is used excessively or is not used sufficiently can be prevented.
Further, the sputtering system further includes: and an Alarm unit configured to issue an Alarm (Alarm) when the flow change of the preset gas monitored by the gas flow monitoring unit exceeds a reference value.
Here, the specific manner of the alarm may be sound or image, so as to inform the operator to terminate the sputtering of the target assembly 10 in time, and prevent the target layer from being used excessively or insufficiently.
Further, the sputtering system may further include: a control unit configured to control the sputtering apparatus to terminate sputtering when the flow rate change of the preset gas monitored by the gas flow rate monitoring unit exceeds a reference value.
The specific working mode of the alarm unit or the control unit can continue to use devices such as an alarm, a controller and the like in the prior art, which is not described in embodiment 2 of the present invention again.
Example 3
On the basis of the foregoing, embodiment 3 of the present invention further provides a method for monitoring consumption of a target layer in a sputtering system, wherein the sputtering system is specifically the sputtering system provided in embodiment 2, and the monitoring method includes, but is not limited to, the following steps:
step 1, switching on a power supply, and introducing preset gas into a chamber to enable a sputtering device to start sputtering;
step 2, starting a gas flow monitoring unit to monitor the flow change of the preset gas introduced into the chamber;
and 3, when the flow change exceeds the reference value, stopping sputtering by the sputtering device.
Here, the specific implementation manners of step 3 include, but are not limited to, the following three manners:
in a first mode
When the staff directly see that the flow change of the preset gas introduced into the chamber, which is monitored by the gas flow monitoring unit, exceeds a reference value, the discharge of the sputtering device is closed;
mode two
The alarm unit connected with the gas flow monitoring unit gives an alarm when the flow change of the preset gas monitored by the gas flow monitoring unit exceeds a reference value, and a worker closes the discharge of the sputtering device after receiving the alarm;
mode III
The control unit connected with the gas flow monitoring unit is configured to control the sputtering device to stop sputtering when the flow change of the preset gas monitored by the gas flow monitoring unit exceeds a reference value, and automatic closing during abnormal sputtering can be realized.
By the monitoring method for the consumption state of the target material layer in the sputtering system provided by embodiment 3 of the present invention, in the sputtering process of the target material assembly, when the target material layer is consumed to the preset thickness or at least partially completely consumed, the adsorption layer exposed on the surface of the target material layer adsorbs the preset gas in the chamber, so that the flow rate of the gas changes rapidly, and exceeds the reference value of the normal change of the gas in the sputtering process, and the gas flow rate can be monitored by the gas flow rate monitoring unit (qlee) in the sputtering system, so that the consumption degree of the target material layer can be grasped in time, and the situation that the target material layer is used excessively or insufficiently is prevented.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A target assembly, comprising: the target material layer is arranged on the surface of the substrate; characterized in that the target assembly further comprises:
an adsorption layer embedded in the target layer or disposed between the substrate and the target layer, the adsorption layer configured to adsorb a predetermined gas.
2. The target assembly of claim 1, wherein the target layer comprises a first surface distal from the substrate; the first surface is divided into a preset area, and the part of the target material layer corresponding to the preset area is a part which is easy to be sputtered through;
the orthographic projection of the preset area on the substrate is completely overlapped with the orthographic projection of the adsorption layer on the substrate.
3. The target assembly of claim 1, wherein the adsorption layer is comprised of an adsorption media having a particle size of less than 3 nm.
4. The target assembly of claim 1, wherein the adsorption layer is comprised of an adsorption media comprising at least one of a porous coordination polymer, carbon nanotubes, zeolite molecular sieves.
5. The target assembly of claim 1, wherein the predetermined gas is hydrogen.
6. The target assembly of claim 1, wherein the substrate comprises: a back plate and a binding layer; the binding layer is located between the backing plate and the target layer.
7. A sputtering system, characterized in that the sputtering system comprises a sputtering apparatus; the sputtering apparatus includes:
a chamber;
the target assembly of any of claims 1-6 disposed within the chamber;
and the gas flow monitoring unit is configured to monitor the flow change of the preset gas introduced into the cavity.
8. The sputtering system of claim 7, further comprising:
and the alarm unit is configured to give an alarm when the flow change of the preset gas monitored by the gas flow monitoring unit exceeds a reference value.
9. The sputtering system of claim 7, further comprising:
a control unit configured to control the sputtering apparatus to terminate sputtering when the change in the flow rate of the preset gas monitored by the gas flow rate monitoring unit exceeds a reference value.
10. A method of monitoring consumption of a target layer in a sputtering system, wherein the sputtering system is the sputtering system of any one of claims 7 to 9, the method comprising:
switching on a power supply, and introducing the preset gas into the cavity to enable the sputtering device to start sputtering;
starting the gas flow monitoring unit to monitor the flow change of the preset gas introduced into the cavity;
causing the sputtering apparatus to terminate sputtering when the flow rate variation exceeds a reference value.
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| CN201810011237.8A CN108149207B (en) | 2018-01-05 | 2018-01-05 | Target assembly, sputtering system and monitoring method for consumption condition of target layer |
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2018
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| CN108149207A (en) | 2018-06-12 |
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