CN1081422C - Image inducer having electronic optical shutter - Google Patents
Image inducer having electronic optical shutter Download PDFInfo
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- CN1081422C CN1081422C CN97122282A CN97122282A CN1081422C CN 1081422 C CN1081422 C CN 1081422C CN 97122282 A CN97122282 A CN 97122282A CN 97122282 A CN97122282 A CN 97122282A CN 1081422 C CN1081422 C CN 1081422C
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- image sensor
- electronic shutter
- sensitization
- storage element
- tool electronic
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Abstract
The present invention relates to an image inductor with an electronic shutter. A sensitising capacitor is formed by an upper-layer electrode plate and a lower-layer silicon material, an output point is formed on the upper-layer electrode plate through a sampling/a keeping switches, the silicon material is serially connected with a reset switch and is connected with the reference voltage, and the image induction unit orderly carries out the serial reset, the sensitization, the charge conversion (storage), the reading, etc. through the variation of the sequential relationship of the two switches. In the step of the charge conversion, the charge generated by the sensitization of the silicon material is transmitted into the upper-layer electrode plate through the capacitor induction, and the charge is read in the upper-layer electrode plate; thereby, the effect with the electronic shutter is formed.
Description
The present invention relates to a kind of image sensor of tool electronic shutter.
Image sensor aspect now, charging coupling unit (CCD) (CHARGE COUPLE DRIVE) is arranged and by MOS video sensing array different patterns such as (IMAGE SENSORARRAY), this charging coupling unit (CCD) is fed through charging coupling unit (CCD) with the formed electric charge of each pixel sensitization and stores, and then send with serial mode by the output of CCD in regular turn, and be fed through in the CCD in a flash together at above-mentioned electric charge with each pixel induction, promptly form a kind of action, to obtain correct signal at the orthochronous point as " electronic shutter ".And for the structure of MOS video sensing array, it mainly is the structure that dispenses CCD, be the example explanation promptly below with the image sensor that forms as only 4 * 3 pixels of Figure 11, its reality is textural, be roughly one and be similar to the pixel 90 that dynamic memory has proper alignment, each pixel 90 is formed with light sensitive diode 91 and oxide-semiconductor control transistors 92, form most character lines 93 (WORD LINE) and most bit line 94T (BIT LINE) by a vertical scanning circuit 96 and a horizontal scanning circuit 95, on the manner of execution of this circuit, promptly cross vertical and horizontal scanning circuit 96,95 scan each light sensitive diode 91 in regular turn, each light sensitive diode 91 is fed to corresponding bit line 94 places because of the charge inducing that is subjected to light and forms through oxide-semiconductor control transistors 92, so that output 98 can be sent the charge signal that each pixel is subjected to the light gained in regular turn, be converted to signal of video signal by external circuit then.
Though having, this MOS video sensing array is convenient to make, the advantage that low power consumption and cost are comparatively cheap, but lack the effect of the electronic shutter of CCD, that is only make the electric charge of light sensitive diode 91 be sent on the bit line 94 in the oxide-semiconductor control transistors 92 of pixel 90, be not usefulness as store charge, and during oxide-semiconductor control transistors 92 conductings, except the electric charge of light sensitive diode 91 is sent, other pixel is then constantly responded to extraneous light and is changed, so in order to obtain correct image, must make the sensitization in regular turn of each pixel and read electric charge in regular turn, make that the time span of each pixel sensitization is identical, therefore be only applicable to static state or image changes occasion (as: monitoring camera slowly ... Deng), for the fast-changing occasion of image, then have no way of reaching, MOS video sensing array can't replace one of reason of CCD and this defective promptly can't provide shutter to make now.
Main purpose of the present invention is to provide a kind of MOS of making image sensor to have the shutter effect concurrently, with the image sensor of the tool electronic shutter of the utilization aspect that enlarges this type of image sensor.
The object of the present invention is achieved like this, and a kind of image sensor of tool electronic shutter is characterized in that it comprises: a top plate only needs electric conducting material to constitute; One lower plywood can be made of to have and attracts light to change the effect of electric charge into silicon materials; One reset switch is for being serially connected between a lower plywood and the reference voltage; One sampling/maintained switch, form output signal for being serially connected with top plate, be the specific time sequence switching motion by two switches, can be floating at lower plywood and carry out sensitization and stored charge, and when lower plywood connects reference voltage, make charge conversion to the top plate place, and send the electric charge of induction again by top plate, and during this charge conversion, constitute effect as electronic shutter.
The image sensor of described tool electronic shutter is characterized in that: the top plate of its sensitization storage element can be made of transparent material.
The image sensor of described tool electronic shutter is characterized in that: the top plate of its sensitization storage element can be made of compound crystal silicon.
The image sensor of described tool electronic shutter is characterized in that: the upper and lower laminate of its sensitization storage element can be replaced by the grid and the silicon base of a MOS transistor.
The image sensor of described tool electronic shutter is characterized in that: the MOS transistor of its sensitization storage element can be connected in parallel its source/drain electrode and form the electrode contact of lower plywood.
The image sensor of described tool electronic shutter is characterized in that: the MOS transistor of its sensitization storage element can be connected in parallel with its source/drain electrode and with its substrate and form the electrode contact of lower plywood.
The image sensor of described tool electronic shutter is characterized in that: this sensitization storage element can be connected in series a light sensitive diode by a true capacitor and constitute.
The image sensor of described tool electronic shutter is characterized in that: this sensitization storage element can be connected in series a light sensitive diode by a MOS transistor and constitute.
The image sensor of described tool electronic shutter is characterized in that: this sensitization storage element can be made of a diode and a light sensitive diode.
The image sensor of described tool electronic shutter is characterized in that: this output signal more can be connected with the bit line by an amplifier transistor, constitutes initiatively image sensor.
The image sensor of described tool electronic shutter is characterized in that: more can be connected in series one and be same as the parasitism of sensitization storage element or the compensation diode of equivalent diode equal area and same side voltage on output signal, correctly to read charge inducing.
Owing to adopted above-mentioned technical solution, the present invention changes the essential structure of each pixel of MOS image sensor and forms a sensitization storage element, connect control switch in the two ends of this element dexterously, sequencing control by control switch, promptly form the effect of electric charge induction and storage, that is form as the effect of electronic shutter, can't be applicable to that to solve the MOS image sensor image changes the restriction of occasion fast.
Further specify specific structural features of the present invention and purpose below in conjunction with accompanying drawing.
Brief Description Of Drawings:
Figure 1A is the schematic diagram of the image sensor of tool electronic shutter of the present invention.
Figure 1B is the control signal sequential chart of Figure 1A.
Fig. 2 is the first embodiment of the present invention.
Fig. 3 is the second embodiment of the present invention.
Fig. 4 is the third embodiment of the present invention.
Fig. 5 is the fourth embodiment of the present invention.
Fig. 6 is the fifth embodiment of the present invention.
Fig. 7 is the sixth embodiment of the present invention.
Fig. 8 is the seventh embodiment of the present invention.
Fig. 9 A is eighth embodiment of the present invention figure.
Fig. 9 B is the control signal sequential chart of Fig. 9 A.
Figure 10 A is ninth embodiment of the present invention figure.
Figure 10 B is tenth embodiment of the present invention figure.
Figure 11 is the structural representation of existing MOS video sensing array.
Shown in Figure 1A, each pixel inside of MOS video sensing array of the present invention is to use a sensitization storage element 10 and two switches (RST), (SH) constitute, wherein, this sensitization storage element 10 is to be formed apart from configuration with an appropriate intervals by a upper electrode plate 11 and lower floor's silicon materials 12, can enter to lower floor's silicon materials 12 places and make its sensitization and form electric charge (e-) by extraneous light, these lower floor's silicon materials 12 are serial connection one reset switch RST and being connected with a reference voltage (V1), this upper electrode plate 11 is serial connection one sampling/maintained switch SH and being connected with each character line (BL) of MOS video sensing array, to form signal path output, and make aforementioned two switches be switched on or switched off dexterously with being different sequential, can in regular turn pixel be reset, sensitization, the action of charge conversion (storage) and output charge.
Can cooperate shown in the action sequence schematic diagram of two switches of Figure 1B, in the t1 time, make two switches (RST), when (SH) all being connection (high level), send into a V2 voltage at bit line BL, so make the two ends of this sensitization storage element 10 be discharged to the magnitude of voltage of V2 and V1, to form to the reset action of (RESET) of sensitization storage element 10, above-mentioned after discharge is finished to sensitization storage element 10, then during t2, only ream weight is put switch RST disconnection, at this moment, because lower floor's silicon materials 12 are to be suspension joint (floating) state, so can receive extraneous light and attract the photoelectron (e-) that produced by light in inside, and simultaneously generate the positive charge relevant (this stage claim be photo stage (frame integration)) with lower floor silicon materials 12 photoelectrons in 11 inductions of upper electrode plate, during t3, ream weight is put switch RST and is recovered to connect, make lower floor's silicon materials 12 be connected to the V1 reference voltage, and season, sampling/maintained switch SH changed off-state (making upper electrode plate 11 be floating) into together, at this moment, then can make the positive charge of induction be stored in upper electrode plate 11 places (promptly being referred to as charge conversion (storage) stage this moment), in the last t4 period, order sampling/maintained switch SH recovers to be on-state, and makes the positive charge of upper electrode plate 11 read out to bit line BL upward (promptly reading the electric charge stage).
And during above-mentioned charge conversion (storage) (t3 period), except the photoelectron that lower floor's silicon materials 12 can be accumulated, by capacitive coupling upper electrode plate 11 is stored outside the relevant positive charge, also owing to lower floor's silicon materials 12 have been connected to V1 voltage (non-floating) this moment, even if extraneous light is sent into the generation photoelectron, promptly directly sponge by reference voltage source V1 place, so make these lower floor's silicon materials 12 be the cut-off state of not accumulating the sensitization electronics, can prevent overexposure, length as for sensitive time is then decided by the size of Δ t among the 2nd B figure, this measure, promptly with respect to this sensitization storage element, effect as electronic shutter is arranged, it is sensitization during aforementioned Δ t only, and all be by the state of not accumulating the sensitization electric charge in other periods, at this moment also since the sensitization electric charge changed and be stored in upper electrode plate 11 places, so unlikely puzzlement that causes electric charge to disappear, so above-mentioned simple structure, promptly provide each pixel of MOS image sensor to have, and make it can solve the defective that the MOS image sensor can't capture the fast moving image as the shutter effect as the CCD element.
And according to the framework of the image sensor of the invention described above, the upper electrode plate 11 of its sensitization storage element 10 can be made of the compound crystal silicon grid, lower floor's silicon materials 12 then can be reached by the silicon base of MOS transistor, so on the practice, can use as shown in Figure 2, replace with MOS transistor 20, and with the source/drain electrode (S) of MOS transistor 20, (D) short circuit is as its electrode contact or use shown in second embodiment of Fig. 3, the substrate that makes electrode contact more be connected to MOS transistor also can be reached, in addition, also can be as figure four, five, shown in six, form aforesaid conversion memory function with the capacitor 30 of a reality or with a MOS transistor 20 even with the diode 50 of a reality, and then be connected in series the function that a light sensitive diode 40 forms sensitization, also can constitute this sensitization storage element, and figure eight, the 9th, the alternate embodiment that expression oppositely connects light sensitive diode 40, all identical difference that there is no of effect.
And under the basic framework of Figure 1A, also can increase as the amplifier transistor among Fig. 9 A 60, make it become initiatively image sensor, again via bit line BL read-out voltage or current signal (action sequence is shown in Fig. 9 B).
In addition, consider the nonlinear effect of the sensitization storage element 10 of Figure 1A or Fig. 9 A, be connected in series an equivalent diode as the below of sensitization storage element herewith, under the situation that equivalent diode (D1) shown in can the dotted line of Figure 10 A is simulated, this equivalent diode (D1) promptly as the same variable capacitance (Cd1) that can change with voltage, may cause the signal reading error, at this problem, then can be by being proofreaied and correct as the external circuit of Figure 10 A, the position is Error-Correcting Circuit at position, Figure 10 A right side, and the position only is that a signal is read the loop at the operational amplifier 81 and the switch (φ 1) of middle section position, can cooperate referring to shown in the control signal sequential chart of Figure 10 B, switch (φ 1) is except being open circuit during t4 (reading electric charge), all the other periods all are short circuit, to make sensitization storage element 10 upper ends all be in the V2 voltage status, and only when desiring to read electric charge, through switching to open-circuit condition, so that the electric charge on the sensitization storage element 10 (QCm) is transferred on the electric capacity (C1), to form output voltage (Vy), this the figure right side of face with the compensation diode Dec in the frame of broken lines zone promptly as the usefulness of error correction, with the operational amplifier 82 of position in the drawing rightmost side, switch (φ 2) and electric capacity (C3) form a complete Error-Correcting Circuit.
Below promptly how explanation reaches the principle that corrects mistakes, at first be to make Cm=C1=C2, and will compensate the sectional area size that diode Dec is designed to be same as equivalent diode (D1), even also the equivalent capacity (Cdec) of compensation diode Dec formation is same as the equivalent capacity (Cd1) of equivalent diode (D1), when the terminal voltage of this two diode (D1), (Dec) also is made as under the identical situation, can offset the signal errors that this equivalence diode (D1) is produced, reflect actual induced signal really and reach.
Suppose that all operational amplifiers 81,82 and all switches (SH, φ Xiangtang, φ Jun) are all under desirable (IDEAL) state in Figure 10 A, during t1, reset switch RST connects when the V1 voltage, Vn1=V1 then, and during t2 (image sensitization), owing to reset switch RST open circuit is under the state of suspension joint the n1 point, via the effect of sensitization storage element, and make Vn1=Vx, so this n1 order the sensitization quantity of electric charge:
Qn1＝(Vx-V1)、(Cd1+Cm)………(1)
During t3 (charge conversion), the charge Q Cm that locates to store in the storage capacitors (Cm) of sensitization storage element 10 is:
QCm＝Qn1(Cm/(Cd1+Cm))…(2)
Because of C1=Cm, so Vy=(Qn1/ (Cd1+Cm))+V 2
In following formula, the bias voltage of understanding along with PN junction owing to the equivalent capacity (Cd1) of equivalent diode (D1) changes, that is the phenomenon that changes along with the voltage of Vn1, so cause the variable quantity of output voltage (Vy) to become non-linear relation with the charge inducing Qn Xiangtang that incident light is produced, therefore, aforementioned compensation diode Dec is designed to be same as the equivalent capacity size (seeing through area is made as equal) of equivalent diode (D1), and make the terminal voltage (being V3-V2) of this compensation diode Dec also be made as the terminal voltage (V1-VSS) that is same as equivalent diode (D1), even Cd1=CDec, so t4 read electric charge during, the electric charge at this C2 and CDec place is (Vy-V Fallen-leaves-and-bark), (C2+CDec)=(Qn1/ (Cd1+Cm)), (C2+CDec)=Qn1, and correction of a final proof output voltage V z=(Qn1/C3)+V3 at this moment, because C3 and V3 are constant, so make that the variable quantity of output voltage V z and incident light are linear, therefore, can reach the Problem-Error that correction is derived because of equivalent diode (D1).
Claims (11)
1. the image sensor of a tool electronic shutter, it comprises:
One top plate only needs electric conducting material to constitute;
One lower plywood can be made of to have and attracts light to change the effect of electric charge into silicon materials;
One reset switch, for being serially connected between a lower plywood and the reference voltage,
It is characterized in that it also comprises:
One sampling/maintained switch forms output signal for being serially connected with top plate,
Be the specific time sequence switching motion by two switches, can be floating at lower plywood and carry out sensitization and stored charge, and when lower plywood connects reference voltage, make charge conversion to the top plate place, and send the electric charge of induction again by top plate, and during this charge conversion, constitute effect as electronic shutter.
2. the image sensor of tool electronic shutter according to claim 1 is characterized in that: the top plate of its sensitization storage element can be made of transparent material.
3. the image sensor of tool electronic shutter according to claim 1 and 2 is characterized in that: the top plate of its sensitization storage element can be made of compound crystal silicon.
4. the image sensor of tool electronic shutter according to claim 1 is characterized in that: the upper and lower laminate of its sensitization storage element can be replaced by the grid and the silicon base of a MOS transistor.
5. the image sensor of tool electronic shutter according to claim 4 is characterized in that: the MOS transistor of its sensitization storage element can be connected in parallel its source/drain electrode and form the electrode contact of lower plywood.
6. the image sensor of tool electronic shutter according to claim 4 is characterized in that: the MOS transistor of its sensitization storage element can be connected in parallel with its source/drain electrode and with its substrate and form the electrode contact of lower plywood.
7. the image sensor of tool electronic shutter according to claim 1 is characterized in that: this sensitization storage element can be connected in series a light sensitive diode by a true capacitor and constitute.
8. the image sensor of tool electronic shutter according to claim 1 is characterized in that: this sensitization storage element can be connected in series a light sensitive diode by a MOS transistor and constitute.
9. the image sensor of tool electronic shutter according to claim 1 is characterized in that: this sensitization storage element can be made of a diode and a light sensitive diode.
10. the image sensor of tool electronic shutter according to claim 1 is characterized in that: this output signal more can be connected with the bit line by an amplifier transistor, constitutes initiatively image sensor.
11. the image sensor of tool electronic shutter according to claim 1, it is characterized in that: more can on output signal, be connected in series one and be same as the parasitism of sensitization storage element or the compensation diode of equivalent diode equal area and same side voltage, correctly to read charge inducing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97122282A CN1081422C (en) | 1997-11-13 | 1997-11-13 | Image inducer having electronic optical shutter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97122282A CN1081422C (en) | 1997-11-13 | 1997-11-13 | Image inducer having electronic optical shutter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1217620A CN1217620A (en) | 1999-05-26 |
| CN1081422C true CN1081422C (en) | 2002-03-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97122282A Expired - Fee Related CN1081422C (en) | 1997-11-13 | 1997-11-13 | Image inducer having electronic optical shutter |
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| Country | Link |
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| CN (1) | CN1081422C (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589027A (en) * | 1984-06-19 | 1986-05-13 | Olympus Optical Co., Ltd. | Solid state image sensor |
| EP0683603A2 (en) * | 1986-10-23 | 1995-11-22 | Sony Corporation | Solid state imaging device with electronic shutter |
-
1997
- 1997-11-13 CN CN97122282A patent/CN1081422C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589027A (en) * | 1984-06-19 | 1986-05-13 | Olympus Optical Co., Ltd. | Solid state image sensor |
| EP0683603A2 (en) * | 1986-10-23 | 1995-11-22 | Sony Corporation | Solid state imaging device with electronic shutter |
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| Publication number | Publication date |
|---|---|
| CN1217620A (en) | 1999-05-26 |
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Granted publication date: 20020320 Termination date: 20161113 |