CN108138032A - Composition for polishing - Google Patents
Composition for polishing Download PDFInfo
- Publication number
- CN108138032A CN108138032A CN201680061350.6A CN201680061350A CN108138032A CN 108138032 A CN108138032 A CN 108138032A CN 201680061350 A CN201680061350 A CN 201680061350A CN 108138032 A CN108138032 A CN 108138032A
- Authority
- CN
- China
- Prior art keywords
- composition
- polishing
- polyalcohol
- weight
- haze value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 163
- 238000005498 polishing Methods 0.000 title claims abstract description 126
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 102
- 239000006061 abrasive grain Substances 0.000 claims abstract description 23
- 239000003513 alkali Substances 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 7
- 125000000424 1,2-diol group Chemical group 0.000 claims abstract 2
- -1 diamine compound Chemical class 0.000 claims description 55
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- FEOHYDSNGHIXOM-WLDMJGECSA-N (3R,4R,5S,6R)-3-amino-6-(hydroxymethyl)-2-methyloxane-2,4,5-triol Chemical class CC1(O)[C@H](N)[C@@H](O)[C@H](O)[C@H](O1)CO FEOHYDSNGHIXOM-WLDMJGECSA-N 0.000 claims description 7
- 125000002947 alkylene group Chemical group 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 125000000962 organic group Chemical group 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 125000005263 alkylenediamine group Chemical group 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
- 229920002521 macromolecule Polymers 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 62
- 229920003169 water-soluble polymer Polymers 0.000 abstract description 11
- 239000003595 mist Substances 0.000 abstract description 9
- 230000009467 reduction Effects 0.000 abstract description 5
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 39
- 239000004576 sand Substances 0.000 description 28
- 238000011156 evaluation Methods 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 21
- 239000004372 Polyvinyl alcohol Substances 0.000 description 20
- 229920002451 polyvinyl alcohol Polymers 0.000 description 20
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 20
- 238000005259 measurement Methods 0.000 description 18
- 238000012360 testing method Methods 0.000 description 15
- 239000004615 ingredient Substances 0.000 description 12
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000002253 acid Substances 0.000 description 11
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 10
- 239000005977 Ethylene Substances 0.000 description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 7
- 239000000908 ammonium hydroxide Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical class CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 5
- 239000002738 chelating agent Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 229940075614 colloidal silicon dioxide Drugs 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000003368 amide group Chemical group 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 229930182478 glucoside Natural products 0.000 description 3
- 150000008131 glucosides Chemical group 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 150000000180 1,2-diols Chemical group 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- JJJOZVFVARQUJV-UHFFFAOYSA-N 2-ethylhexylphosphonic acid Chemical compound CCCCC(CC)CP(O)(O)=O JJJOZVFVARQUJV-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 2
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 235000013844 butane Nutrition 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 229930182470 glycoside Natural products 0.000 description 2
- 150000002338 glycosides Chemical class 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical class CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 238000007127 saponification reaction Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- ZCURVRPNFDBOMR-UHFFFAOYSA-N 2-methyl-2-phosphonobutanedioic acid Chemical compound OC(=O)C(P(O)(O)=O)(C)CC(O)=O ZCURVRPNFDBOMR-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- HOTZVDBZAQCHNL-UHFFFAOYSA-N C(=O)(O)C(C(CCCC)(CC)C(=O)O)(CC)P(O)(O)=O.CC Chemical compound C(=O)(O)C(C(CCCC)(CC)C(=O)O)(CC)P(O)(O)=O.CC HOTZVDBZAQCHNL-UHFFFAOYSA-N 0.000 description 1
- 241000040710 Chela Species 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical group OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- SFAUHNMFJJOFRM-UHFFFAOYSA-N OCC(P(O)(O)=O)P(O)(O)=O.C Chemical compound OCC(P(O)(O)=O)P(O)(O)=O.C SFAUHNMFJJOFRM-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 240000000111 Saccharum officinarum Species 0.000 description 1
- 235000007201 Saccharum officinarum Nutrition 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- QRTCASNUSVDIEL-UHFFFAOYSA-N azane;2-[bis(carboxymethyl)amino]acetic acid Chemical compound N.OC(=O)CN(CC(O)=O)CC(O)=O QRTCASNUSVDIEL-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical group OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- BEGBSFPALGFMJI-UHFFFAOYSA-N ethene;sodium Chemical group [Na].C=C BEGBSFPALGFMJI-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-O ethylaminium Chemical compound CC[NH3+] QUSNBJAOOMFDIB-UHFFFAOYSA-O 0.000 description 1
- GATNOFPXSDHULC-UHFFFAOYSA-N ethylphosphonic acid Chemical compound CCP(O)(O)=O GATNOFPXSDHULC-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005456 glyceride group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000002467 phosphate group Chemical class [H]OP(=O)(O[H])O[*] 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229940083542 sodium Drugs 0.000 description 1
- 235000015424 sodium Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- DZCAZXAJPZCSCU-UHFFFAOYSA-K sodium nitrilotriacetate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CC([O-])=O DZCAZXAJPZCSCU-UHFFFAOYSA-K 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- General Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides the composition for polishing of a kind of inhibition of achievable surface defect and the reduction of mist degree.Composition for polishing includes abrasive grain, selected from least one of the vinyl alcohol resin with 1,2 diol structure unit water soluble polymer, polyalcohol and alkali cpd.Composition for polishing preferably further includes nonionic surfactant.
Description
Technical field
The present invention relates to a kind of composition for polishing.
Background technology
Grinding using the silicon wafer of CMP (Chemical Mechanical Polishing, chemical mechanical grinding) passes through
It carries out the multistage grinding in 3 stages or 4 stages and realizes high-precision planarization.For the institute in the grinding process of terminal stage
The slurry used, usually using the water soluble polymers such as hydroxyethyl cellulose (HEC) and polyvinyl alcohol (PVA).
For example, having following composition for polishing disclosed in Japanese Patent Laid-Open 2012-216723 bulletins, it includes choosings
From at least one kind of water soluble polymer and alkali in the vinyl alcohol resin with 1,2- diol structure units.
Invention content
However, in recent years, it is desirable that with the tightened up horizontal mist degree (haze) for inhibiting surface defect, reducing surface.
The present invention completes in order to solve this problem, and grinding for surface defect and mist degree is reduced its purpose is to provide a kind of
Mill composition.
Implementation form according to the present invention, composition for polishing include abrasive grain, selected from 1 represented by following formula (1),
At least one kind of water soluble polymer, polyalcohol and alkali cpd in the vinyl alcohol resin of 2- diol structure units.
In formula, R1、R2And R3Separately represent hydrogen atom or organic group, X represents singly-bound or key chain, R4、R5And R6
Separately represent hydrogen atom or organic group, R7And R8Separately represent hydrogen atom.
Implementation form according to the present invention, composition for polishing include abrasive grain, selected from 1 represented by above-mentioned formula (1),
At least one kind of water soluble polymer, polyalcohol and alkali cpd in the vinyl alcohol resin of 2- diol structure units, therefore
The inhibition of surface defect of silicon wafer after grinding and the reduction of mist degree can be achieved.
Specific embodiment
The implementation form of the present invention is described in detail.
The composition for polishing COMP1 of the implementation form of the present invention includes abrasive grain, selected from represented by following formula (1)
At least one kind of water soluble polymer, polyalcohol and alkali cpd in the vinyl alcohol resin of 1,2- diol structure unit.
[chemical formula 1]
In formula, R1、R2And R3Separately represent hydrogen atom or organic group, X represents singly-bound or key chain, R4、R5And R6
Separately represent hydrogen atom or organic group, R7And R8Separately represent hydrogen atom.
Composition for polishing COMP1 is used for the grinding of silicon.
As abrasive grain, common abrasive grain in the field can be used, such as colloidal silicon dioxide, gas phase titanium dioxide can be enumerated
Silicon, colloidal alumina, gaseous oxidation aluminium and cerium oxide etc., particularly preferably colloidal silicon dioxide or aerosil.
Water soluble polymer represented by above formula (1) is modified polyvinylalcohol (modified PVA).As modified PVA, can make
With the PVA of high saponification type, the PVA of low saponification type can also be used.In addition, as modified PVA, the arbitrary degree of polymerization can be used
PVA.As modified PVA, it is independently matched with a kind or coordinates two or more.
It's not limited to that for the content of water soluble polymer, with relative to the weight % of abrasive composition (stoste) entirety
Meter, preferably for example, 0.01~1.0 weight %, 0.03~0.7 weight %.In addition, with relative to the ratio of 1 parts by weight of abrasive grain
Meter, preferably for example, 0.001~0.1 parts by weight, 0.003~0.07 parts by weight.
Polyalcohol is the alcohol that 2 or more hydroxyls are included in 1 molecule.As polyalcohol, such as can enumerate：Sugar with sugar with
It is glucosides (Glycoside) obtained by glycoside link occurs for outer organic compound, more obtained by addition alkylene oxide on polyalcohol
It is polyol esters of fatty acids obtained by ester linkage occurs for first alcohol alkylene oxide addition product, aliphatic acid and polyalcohol, glycerine, propylene glycol, poly-
Ethylene glycol etc..As glucosides, such as alkylene oxide derivative of methyl glucosamine represented by following formula (2) etc. can be enumerated.As more
First alcohol alkylene oxide addition product, such as the alkylene oxide addition product of glycerine, pentaerythrite, ethylene glycol etc. can be enumerated.As polyol resin
Fat acid esters, such as fatty glyceride, aliphatic acid sorbitol ester, sorbitan fatty esters, aliphatic acid sugarcane can be enumerated
Sugar ester etc..Polyhydric alcohols are coordinated such as the use level less than water soluble polymer.
[chemical formula 2]
In formula, AO represents alkylene oxide.In addition, a~d represents integer.
As the alkylene oxide derivative of methyl glucosamine, such as polyoxyethylene methyl glucosamine, polyoxy Asia third can be enumerated
Ylmethyl glucoside etc..
As polyalcohol, a kind can be used, can also be used together by two or more types.It may refrain from surface defect and reduce the sight of mist degree
For point, preferably polyhydric alcohol conjugate of more than two kinds is used.
It's not limited to that for the content (in the case of containing two or more polyalcohol, the content total for its) of polyalcohol,
By based on the weight % of abrasive composition (stoste) entirety, for example, 0.0001~0.3 weight %, preferably 0.001~
0.1 weight %.In addition, by based on the ratio of 1 parts by weight of abrasive grain, for example, 0.00001~0.03 parts by weight, preferably
0.0001~0.01 parts by weight.
As alkali cpd, ammonia, quarternary ammonium salt, potassium hydroxide, sodium hydroxide, saleratus, potassium carbonate, carbonic acid can be enumerated
Hydrogen sodium, sodium carbonate, ammonium hydrogen carbonate, ammonium carbonate, amine compounds etc..As alkali cpd, these illustrated changes can be independently matched with
1 kind in object is closed, two or more can also be coordinated.As quarternary ammonium salt, such as tetramethyl ammonium hydroxide, hydroxide four can be enumerated
Ethyl ammonium etc..
It should be noted that as amine compounds, aliphatic amine, hetero ring type amine etc. can be coordinated.Specifically, it can coordinate
Methyl amine, dimethyl amine, Trimethylamine, ethylamine, diethylamide, triethylamine, propyl amine, butylamine, hexyl amine, cyclohexyl
Amine, ethylenediamine, hexamethylene diamine, diethylenetriamines, trien, ethanol amine, Piperazine anhydrous, piperazine six are hydrated
Object, 1- (2- amidos ethyl) piperazine and N methyl piperazine etc..
It's not limited to that for the content of alkali cpd, by based on the weight % of abrasive composition (stoste) entirety, example
Such as it is 0.001~1.0 weight %, preferably 0.01~0.7 weight %.In addition, by based on the ratio of 1 parts by weight of abrasive grain,
For example, 0.0001~0.1 parts by weight, preferably 0.001~0.07 parts by weight.
Composition for polishing COMP1 will be by that will be selected from the second with 1, the 2- diol structure units represented by above-mentioned formula (1)
At least one kind of water soluble polymer, abrasive grain, polyalcohol and alkali cpd in enol system resin suitably mix and add water
It makes.In addition, composition for polishing COMP1 passes through successively by abrasive grain, selected from 1, the 2- glycol knots represented by above-mentioned formula (1)
At least one kind of water soluble polymer, polyalcohol and alkali cpd in the vinyl alcohol resin of structure unit are mixed in water to make
Make.Also, as the method mixed these ingredients, the skill of the composition for polishing such as homogenizer and ultrasonic wave can be used
Common method in art field.
Composition for polishing COMP1 includes alkali cpd, and as a result such as pH value is set at 8~12 range.
Composition for polishing COMP1 preferably further includes nonionic surfactant.It lives as non-ionic surface
Property agent, such as the diamine compound preferably represented by the following general formula (3).Diamine compound represented by general formula (3) includes tool
There is the Alkylenediamine structure of 2 nitrogen and be bonded at least one block type polyethers on 2 nitrogen of Alkylenediamine structure, it is embedding
Segment type polyethers is obtained by oxygen ethylidene is bonded with oxygen propylidene
[chemical formula 3]
In formula, n represents more than 1 integer.
As the diamine compound represented by formula (3), such as N, N, N ' can be enumerated, (polyoxy is sub- by N '-four (polyoxyethylene)
Propyl) ethylenediamine (that is, pool Lip river sand amine) etc..Lip river sand amine is moored for example to be represented by following formula (4) or formula (5).
[chemical formula 4]
In formula, a~g represents integer.
[chemical formula 5]
In formula, a~g represents integer.
As nonionic surfactant, other than the diamine compound represented by formula (3), pool Lip river can also be used
Sha Mu, polyoxyalkylene alkyl ether, polyoxyalkylene fatty acid esters, amines etc..
As polyoxyalkylene alkyl ether, for example, can enumerate polyoxyethylenelauryl ether, polyoxyethylene cetyl ether,
Polyoxyethylene stearyl ether etc..As polyoxyalkylene fatty acid esters, such as polyoxyethylene monolaurate can be enumerated, gathered
Oxygen ethylidene monostearate etc..As amines, such as polyoxyethylenelauryl base amine, polyoxy Asia can be enumerated
Ethyl oil base amine etc..
It's not limited to that for the content of nonionic surfactant, with relative to the weight of abrasive composition (stoste) entirety
Measure % meters, preferably for example, 0.0001~0.3 weight %, 0.001~0.1 weight %.In addition, with relative to 1 weight of abrasive grain
The ratio meter of part, preferably for example, 0.00001~0.03 parts by weight, 0.0001~0.01 parts by weight.
In the implementation form of the present invention, composition for polishing COMP1 can further include chela according to required characteristic
Mixture, acidic materials etc..
As chelating agent, such as amido carboxylic serials chelating agent and organic phospho acid system chelating agent etc. can be enumerated.
As amido carboxylic serials chelating agent, such as ethylenediamine tetra-acetic acid, sodium ethylene diamine tetracetate, three second of nitrilo- can be enumerated
Acid, sodium nitrilo triacetate, nitrilotriacetic acid ammonium, Oxyethylethylenediaminetriacetic acid, Oxyethylethylenediaminetriacetic acid sodium,
Diethylene-triamine pentaacetic acid, diethylenetriaminepentaacetic acid sodium, triethylenetetraaminehexaacetic acid, triethylenetetraaminehexaacetic acid
Sodium etc..
As organic phospho acid system chelating agent, such as 2- amidos ethylphosphonic acid, 1- hydroxy ethylidene base -1,1- diphosphines can be enumerated
Acid, amido three (methylene phosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylene triamine penta(methylene phosphonic acid), ethane -1,
1,-di 2 ethylhexyl phosphonic acid, ethane -1,1,2- tri methylene phosphonic acids, ethane -1- hydroxyls -1,1- di 2 ethylhexyl phosphonic acid, ethane -1- hydroxyls -1,1,2- tri methylene phosphonic acids,
Ethane -1,2- dicarboxyl -1,2- di 2 ethylhexyl phosphonic acid, methane hydroxyethylidene diphosphonic acid, 2- phosphinylidyne butanes -1,2- dicarboxylic acids, 1- phosphinylidyne butanes -
2,3,4- tricarboxylic acids, Alpha-Methyl phosphonosuccinic acid etc..
As acidic materials, carboxylate, sulfonate, acid phosphate salt, phosphonate, inorganic acid salt, alkylamine can be enumerated
Ethylene oxide adduct, polyol partial esters, carboxylic acid amide etc..
More than, above-mentioned implementation form is only the example for being used for implementing the present invention.Therefore, the present invention is not limited to above-mentioned implementations
Above-mentioned implementation form can be suitably changed in and implement by form within the scope of its spirit.
Embodiment
Hereinafter, explain the present invention in detail with embodiment.Specifically, conduct the following evaluation 1~evaluation test of experiment
9。
<Evaluation test 1>(embodiment 1, comparative example 1)
The composition for polishing Sample 1 of embodiment 1 is by abrasive grain (colloidal silicon dioxide), 0.5 weight of 9.5 weight %
Measure the ammonium hydroxide (NH of %4OH), modified PVA (degree of polymerization of 0.0135 weight %：450), the polyalcohol of 0.015 weight %
(1) it is matched in water and will integrally be set as obtained by 100 parts by weight.
The average primary particle diameter (BET (Brunauer-Emmett-Teller) method) of abrasive grain as used herein is 35nm,
Average aggregate particle size is 70nm.In addition, polyalcohol (1) is polyoxyethylene methyl glucosamine, molecular weight 634.
The composition for polishing Sample_CP1 of comparative example 1 is in addition to by the modified PVA of the composition for polishing of embodiment 1
Use level be set as 0.15 weight %, and then other than unmated polyalcohol (1), composition same as Example 1.
As the composition for polishing Ref_1 of reference example, composition for polishing (NP8020H, the Nitta of commercially available product are used
Haas Co., Ltd. manufactures).
It should be noted that above-mentioned composition is the composition before dilution, it is diluted and uses in grinding.In the present embodiment
In comparative example, further add 20 parts by weight of water (that is, being diluted to 21 times) relative to 1 parts by weight of stoste and use (under
It states embodiment and comparative example and is also set as identical).About the composition for polishing Ref_1 of reference example, following evaluation tests 2 with
Identical composition for polishing is also used afterwards.
The ingredient of the composition for polishing of embodiment 1, comparative example 1 and reference example is shown in table 1.In table 1, each ingredient
Weight % represents the weight % relative to composition for polishing (stoste) entirety (for being also set as identical after table 2).
For the composition for polishing of above-described embodiment 1, comparative example 1 and reference example, ground with following grinding condition
Mill.Also, carry out the measure of defect number and haze value.
(grinding condition)
It, will implementation with the ratio of 600mL/ minute using grinding device (SPP800S, this work mechanism of ridge make manufactured by)
The composition for polishing of example 1 and comparative example 1 is supplied to grinding pad (manufacture of SUPREME RN-H, Nitta Haas Co., Ltd.),
Carry out the grinding of 5 minutes silicon wafers.Used silicon wafer is the P-type semiconductor of a diameter of 300mm, and crystal orientation is (100).
As grinding condition at this time, grinding pressure 0.012MPa, the rotary speed for grinding platen is 40rpm, and the rotation of carrier is fast
It spends for 39rpm.
(defect number assay method)
For above-described embodiment 1 and comparative example 1, checking device (the Lasertec Co. Ltd. systems of wafer defect detecting/again are used
Make MAGICS series, M5640) carry out defect number measure.Determination condition is D37mV.It should be noted that the survey of defect number
It is also identical in following embodiments and comparative example to determine method.
(mist degree values determination method)
For above-described embodiment 1 and comparative example 1, wafer surface check device (Hitachi Electronics are used
Engineering Co., Ltd. manufacture, LS6600) carry out haze value measure.It should be noted that the assay method of haze value
Also it is identical in following embodiments and comparative example.
Will be measured by this method the defects of number and the result of haze value be shown in table 1.It should be noted that by reference example
The measurement result of defect number and haze value is set as 100 and represents embodiment 1 and the measurement result of comparative example 1 with relative value.
[table 1]
(evaluation of embodiment)
By the comparison of embodiment 1 and comparative example 1 it is found that a part for the content of modified PVA is replaced into polyalcohol (1)
Embodiment 1 in, defect number, haze value significantly reduce.It is considered that modified PVA protection chip surface, and with pair
The surface of chip assigns the function of wetability.In contrast, as the composition for polishing for including both modified PVA and polyalcohol
The reasons why superior defect number and haze value can be obtained, it is believed that polyalcohol, therefore can be with than modified PVA molecular weight smaller
The surface of chip is more densely protected than modified PVA.
<Evaluation test 2>(embodiment 2~3, comparative example 2)
The composition for polishing Sample 2 of embodiment 2 is by abrasive grain (colloidal silicon dioxide), 0.27 weight of 9.5 weight %
Measure the ammonium hydroxide (NH of %4OH), the modified PVA of 0.07 weight %, 0.014 weight % polyalcohol (1) be matched in water simultaneously
It will integrally be set as obtained by 100 parts by weight.
The composition for polishing Sample 3 of embodiment 3 is in addition to the polyalcohol (2) of 0.014 weight % of cooperation replaces implementing
Other than the polyalcohol (1) coordinated in the composition for polishing of example 2, composition same as Example 2.
Polyalcohol (2) as used herein is polyoxypropylene methyl glucosamine, molecular weight 774.
The composition for polishing Sample_CP2 of comparative example 2 is in addition to the pool Lip river sand amine of 0.014 weight % of cooperation replaces in fact
It applies other than the polyalcohol (1) coordinated in the composition for polishing of example 2, composition same as Example 2.
It should be noted that it is used herein as an example of the pool Lip river sand amine as nonionic surfactant.Specifically, make
To moor Lip river sand amine, the inverse pool Lip river sand amine represented by using following formula (4).The EO/PO ratios (weight ratio) of the pool Lip river sand amine are 40/60,
Molecular weight is 6900.
[chemical formula 4]
In formula, a~g represents integer.
The ingredient of embodiment 2~3 and the composition for polishing of comparative example 2 is shown in table 2.
For the composition for polishing of above-described embodiment 2~3, comparative example 2 and reference example, with embodiment 1 and comparative example 1
Identical grinding condition is ground.Also, carry out the measure of defect number and haze value.Will be measured the defects of number and haze value
Result be shown in table 2.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and represents real with relative value
Apply example 2~3 and the measurement result of comparative example 2.
[table 2]
(evaluation of embodiment)
According to embodiment 2~3 and comparative example 2, compared with comparative example 2, defect number, haze value significantly drop embodiment 2 and 3
It is low.It follows that in the composition for polishing comprising abrasive grain, modified PVA, polyalcohol and ammonium hydroxide, polyalcohol is had
Surface characteristic improvement effect be more than pool Lip river sand amine possessed by surface characteristic improvement effect.
If embodiment 2 and embodiment 3 are compared, the reality of the polyalcohol (1) as epoxyethane derivative is included
It is less than the 3 defect number of embodiment comprising the polyalcohol (2) as propylene oxide derivatives to apply example 2.On the other hand, comprising conduct
Embodiment of the embodiment 3 of the polyalcohol (2) of propylene oxide derivatives than including the polyalcohol (1) as epoxyethane derivative
2 haze values are lower.I.e., it is known that the polyalcohol of ethylene system more effectively plays a role to defect number, and the polyalcohol of propylene is to mist
Degree more effectively plays a role.
Polyalcohol about propylene more effectively plays a role to haze value this point compared to the polyalcohol of ethylene system,
It is believed that the difference of the etching inhibition of the compound of the compound and propylene of ethylene system causes influence.
Past, present inventor et al. studies the etching inhibiting effect of alkali cpd, as a result obtains propylene
Compound is compared to the opinion of the compound etching inhibiting effect bigger of ethylene system.If the opinion is examined applied to polyalcohol
Consider, it may be considered that the polyalcohol of propylene etches inhibiting effect bigger compared to the polyalcohol of ethylene system.That is, include propylene
Polyalcohol composition for polishing compared with the composition for polishing of the polyalcohol comprising ethylene system, be not easy carry out by grinding use
The etching on the surface of the chip caused by composition.Thus, it is believed that the mist of the index of surface roughness ingredient as chip
Angle value reduces.
Polyalcohol about ethylene system more effectively plays a role to defect number this point compared to the polyalcohol of propylene,
It is directly affected it is believed that composition for polishing causes the degree of absorption of wafer surface.
If composition for polishing becomes larger to the adsorption capacity of wafer surface, usual mechanical abrasive action is suppressed.Therefore,
The generation of the damage to wafer surface caused by mechanical lapping is inhibited.In addition, composition for polishing is adsorbed in chip
Surface and protect wafer surface, so as to which particle be inhibited to be attached to the surface of chip.On the other hand, if composition for polishing is to chip
The adsorption capacity on surface becomes larger, then has grinding rate reduction, removes the damage suffered by wafer surface (especially to the relatively deep of wafer face
Damage) the tendency that dies down of power.
Composition for polishing for the compound comprising ethylene system and the grinding of the compound comprising propylene are with combining
For object, the composition for polishing of the compound comprising propylene is larger to the adsorption capacity of wafer surface.It is believed that it is tried in evaluation
It tests in 2, embodiment 3 is more firmly adsorbed in the surface of chip than the composition for polishing of embodiment 2, and grinding rate reduces, knot
Fruit, the power for removing the deeper damage for being present in wafer surface weakens, so as to which defect number increases than embodiment 2.
<Evaluation test 3>(embodiment 4~6)
The Sample 4 of embodiment 4 is in addition to being further combined with 0.0040 weight in the composition for polishing of comparative example 2
Other than the polyalcohol (1) for measuring %, the composition identical with comparative example 2.
The Sample 5 of embodiment 5 is in addition to the use level of the polyalcohol (1) of the composition for polishing of embodiment 4 is set as
Other than 0.0021 weight %, composition same as Example 4.
The Sample 6 of embodiment 6 is in addition to the polyalcohol (2) of 0.0021 weight % of cooperation is used instead of the grinding of embodiment 5
Other than the polyalcohol (1) of composition, composition same as Example 5.
The ingredient of the composition for polishing of embodiment 4~6 is shown in table 3.
For the composition for polishing of above-described embodiment 4~6 and reference example, with embodiment 1 and comparative example 1 are identical grinds
Abrasive stick part is ground.Also, carry out the measure of defect number and haze value.Will be measured the defects of number and the result of haze value show
In table 3.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and embodiment 4~6 is represented with relative value
Measurement result.
[table 3]
(evaluation of embodiment)
As embodiment 4 and 5 it is found that if the use level of polyalcohol included in composition for polishing (1) increases from embodiment 5
Embodiment 4 is added to, then defect number, haze value reduce.
If the embodiment 5 and 6 that pool Lip river sand amine is combined in composition for polishing is compared, with evaluation test 2
In embodiment 2 and 3 comparison similarly, 5 ratio of embodiment comprising the polyalcohol (1) as epoxyethane derivative includes work
The 6 defect number of embodiment of polyalcohol (2) for propylene oxide derivatives is less.On the other hand, comprising deriving as propylene oxide
The embodiment 6 of the polyalcohol (2) of object is lower than 5 haze value of embodiment comprising the polyalcohol (1) as epoxyethane derivative.
<Evaluation test 4>(embodiment 7~10)
In embodiment 7, the composition for polishing with the composition for polishing identical component used in embodiment 4 is used
Sample 4。
The Sample 7 of embodiment 8 is in addition to the use level of the polyalcohol (1) of the composition for polishing of embodiment 7 is set as
0.002 weight % is further combined with other than the polyalcohol (2) of 0.002 weight %, composition same as Example 7.
The Sample 8 of embodiment 9 is in addition to being further combined with 0.004 weight in the composition for polishing of embodiment 7
Other than the polyalcohol (2) for measuring %, composition same as Example 7.
The Sample 9 of embodiment 10 is in addition to that will moor Lip river sand amine from the gradation composition of the composition for polishing of embodiment 9
Other than removal, composition same as Example 9.
The ingredient of the composition for polishing of embodiment 7~10 is shown in table 4.
(grinding condition)
For the composition for polishing of above-described embodiment 7~10, it is ground with following grinding condition.It is filled using grinding
It puts (SPP800S, this work mechanism of ridge make manufactured by), with the ratio of 600mL/ minutes by the grinding group of embodiment 7~10
It closes object and supplies the grinding that 3 minutes silicon wafers are carried out to grinding pad (manufacture of SUPREME RN-H, Nitta Haas Co., Ltd.).
Used silicon wafer is the P-type semiconductor of a diameter of 300mm, and crystal orientation is (100).As grinding condition at this time, grind
Mill load is 0.010MPa, and the rotary speed for grinding platen is 50rpm, and the rotary speed of carrier is 52rpm.
These embodiments 7~10 and reference example are carried out with the measure of defect number and haze value.Will be measured the defects of number and
The result of haze value is shown in table 4.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and with relative value
Represent the measurement result of embodiment 7~10.
[table 4]
(evaluation of embodiment)
If the equal embodiment 7 of the summation of the use level of polyalcohol is compared with embodiment 8, it is found that and with more
The embodiment 8 of first alcohol (1) and polyalcohol (2) compared to being used alone polyalcohol (1) embodiment 7 as polyalcohol, defect number,
Haze value is greatly lowered.
It is believed that it is further reduced as defect number if polyalcohol and haze value and if by the use of polyalcohol (1) and polyalcohol (2)
The reason of be：By and with the polyalcohol of ethylene system and the polyalcohol of propylene, the polyalcohol institute of ethylene system is played well
What is had makes the reduction of defect number the reduction possessed by the property of big contribution and the polyalcohol of propylene to haze value
Make the property of big contribution both characteristics.
If as embodiment 8~9 it is found that the use level of polyalcohol included in composition for polishing (1) and polyalcohol (2)
Increase, then haze value reduces.In addition, about herein the defects of number, embodiment 8, embodiment 9 show the value of same degree.
By embodiment 9~10 it is found that even if when composition for polishing includes 2 kinds of polyalcohols, in composition for polishing into one
In the case that step is comprising pool Lip river sand amine, the effect for reducing defect number and haze value also increases.
<Evaluation test 5>(embodiment 11~16)
In embodiment 11, the composition for polishing with the composition for polishing identical component used in embodiment 8 is used
Sample 7。
The Sample 10 of embodiment 12 is will pool Lip river sand in addition to from the gradation composition of the composition for polishing of embodiment 11
Other than amine removal, the composition identical with embodiment 11.
The Sample 11 of embodiment 13 is in addition to by the use level of the polyalcohol (2) of the composition for polishing of embodiment 12
It is set as other than 0.004 weight %, the composition identical with embodiment 12.
The Sample 12 of embodiment 14 is in addition to by the use level of the polyalcohol (1) of the composition for polishing of embodiment 12
It is set as other than 0.004 weight %, the composition identical with embodiment 12.
In embodiment 15, the composition for polishing with the composition for polishing identical component used in embodiment 10 is used
Sample 9。
The Sample 13 of embodiment 16 is in addition to by the use level of the polyalcohol (1) of the composition for polishing of embodiment 12
0.010 weight % is set as, further the use level of polyalcohol (2) is set as other than 0.010 weight %, it is identical with embodiment 12
Composition.
The ingredient of the composition for polishing of embodiment 11~16 is shown in table 5.
For the composition for polishing of above-described embodiment 11~16 and reference example, with the grinding identical with embodiment 7~10
Condition is ground.Also, carry out the measure of defect number and haze value.Will be measured the defects of number and the result of haze value be shown in
Table 5.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and embodiment 11~16 is represented with relative value
Measurement result.
[table 5]
(evaluation of embodiment)
By embodiment 11~12 it is found that further including the situation of pool Lip river sand amine in the composition for polishing comprising polyalcohol
Under, reduce the effect increase of defect number and haze value.But if the embodiment 2~3 in consideration evaluation test 2 is compared with together
The result of study of example 2, then it is believed that polyalcohol is with mooring in the sand amine of Lip river, polyalcohol significantly contributes to reduce defect number and mist degree
Value.
By embodiment 12~16 it is found that even if in the system for including 2 kinds of polyalcohols in composition for polishing, if grinding group
The sum of use level of polyalcohol (1) and polyalcohol (2) increase included in object is closed, then defect number, haze value also reduce.
It, can if the equal embodiment 13 and 14 of the sum of the use level of polyalcohol (1) and polyalcohol (2) is compared
Know, the embodiment 14 that the ratio of the polyalcohol (1) of ethylene system is higher is less than 13 defect number of embodiment, the polyalcohol of propylene
(2) the higher embodiment 13 of ratio becomes smaller than 14 haze value of embodiment.That is, confirm 2 He of embodiment for meeting evaluation test 2
The result of discussion in 3.
<Evaluation test 6>(embodiment 17~20)
In embodiment 17, the composition for polishing with the composition for polishing identical component used in embodiment 6 is used
Sample 6。
The Sample 14 of embodiment 18 is in addition to being further combined with 0.014 weight in the composition for polishing of embodiment 2
Other than the pool Lip river sand amine for measuring %, composition same as Example 2.
In embodiment 19, the composition for polishing with the composition for polishing identical component used in embodiment 5 is used
Sample 5。
The Sample 15 of embodiment 20 is in addition to the use level of the pool Lip river sand amine of the composition for polishing of embodiment 18 is set
Other than 0.021 weight %, the composition identical with embodiment 18.
The ingredient of the composition for polishing of embodiment 17~20 is shown in table 6.
For the composition for polishing of above-described embodiment 17~20 and reference example, with the lapping stick identical with embodiment 4~6
Part is ground.Also, carry out the measure of defect number and haze value.Will be measured the defects of number and the result of haze value be shown in table
6.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and embodiment 17~20 is represented with relative value
Measurement result.
[table 6]
(evaluation of embodiment)
According to the comparison of embodiment 17 and embodiment 19, the implementation of the polyalcohol (1) as epoxyethane derivative is included
Example 19 is less than the 17 defect number of embodiment comprising the polyalcohol (2) as propylene oxide derivatives.On the other hand, comprising conduct
Implementation of the embodiment 17 of the polyalcohol (2) of propylene oxide derivatives than including the polyalcohol (1) as epoxyethane derivative
Example 19 and haze value is lower.
It is lacked as embodiment 18 and 20 it is found that if the use level of Lip river sand amine is moored included in composition for polishing to be increased
Fall into number, haze value reduces.
<Evaluation test 7>(embodiment 21~26, comparative example 3)
The Sample 16 of embodiment 21 is in addition to by the use level of the polyalcohol (1) of the composition for polishing of embodiment 18
It is set as other than 0.0007 weight %, the composition identical with embodiment 18.
In embodiment 22, the composition for polishing with the composition for polishing identical component used in embodiment 18 is used
Sample 14。
The Sample 17 of embodiment 23 is in addition to by the use level of the polyalcohol (1) of the composition for polishing of embodiment 21
It is set as other than 0.0028 weight %, the composition identical with embodiment 21.
In embodiment 24, the composition for polishing with the composition for polishing identical component used in embodiment 4 is used
Sample 4。
The Sample 18 of embodiment 25 is in addition to the use level of the pool Lip river sand amine of the composition for polishing of embodiment 22 is set
Other than 0.007 weight %, the composition identical with embodiment 22.
In embodiment 26, the composition for polishing with the composition for polishing identical component used in embodiment 20 is used
Sample 15。
In comparative example 3, the composition for polishing with the composition for polishing identical component used in comparative example 2 is used
Sample_CP2。
The ingredient of embodiment 21~26 and the composition for polishing of comparative example 3 is shown in table 7.
For the composition for polishing of above-described embodiment 21~26, comparative example 3 and reference example, with identical with embodiment 4~6
Grinding condition be ground.Also, carry out the measure of defect number and haze value.Will be measured the defects of number and haze value knot
Fruit is shown in table 7.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and embodiment is represented with relative value
21~26 and the measurement result of comparative example 3.
[table 7]
(evaluation of embodiment)
Even by the comparison of embodiment 21~24 and comparative example 3 it is found that being combined with the composition for polishing of pool Lip river sand amine,
The embodiment 21~24 of polyalcohol (1) is combined with compared with comparative example 3, defect number, haze value also significantly reduce.
It is lacked as embodiment 21~24 it is found that if the use level of polyalcohol included in composition for polishing (1) increases
Fall into number, haze value reduces.
As embodiment 22,25 and 26 it is found that if the use level of Lip river sand amine is moored included in composition for polishing to be increased,
Defect number, haze value reduce.
<Evaluation test 8>(embodiment 27~28)
The composition for polishing Sample 19 of embodiment 27 is by the hydroxide of the abrasive grain of 3.5 weight %, 0.1 weight %
Ammonium (NH4OH), the pool Lip river sand amine of the modified PVA of 0.1 weight %, the polyalcohol (2) of 0.02 weight % and 0.01 weight % is matched
Together in will be set as in water and integrally obtained by 100 parts by weight.
The Sample 20 of embodiment 28 is in addition to the use level of the abrasive grain of the composition for polishing of embodiment 27 is set as
Other than 9.0 weight %, the composition identical with embodiment 27.
The ingredient of the composition for polishing of embodiment 29~30 is shown in table 8.
(grinding condition)
For the composition for polishing of above-described embodiment 29~30, it is ground with following grinding condition.Use grinding
Device (SPP800S, this work mechanism of ridge make manufactured by), with the ratio of 600mL/ minute by the grinding use of embodiment 27~28
Composition is supplied to grinding pad (manufacture of SUPREME RN-H, Nitta Haas Co., Ltd.), carries out grinding for 4 minutes silicon wafers
Mill.Used silicon wafer is the P-type semiconductor of a diameter of 300mm, and crystal orientation is (100).As grinding condition at this time,
Grinding load is 0.012MPa, and the rotary speed for grinding platen is 40rpm, and the rotary speed of carrier is 39rpm.
These embodiments 27~28 and reference example are carried out with the measure of defect number and haze value.Will be measured the defects of number
Table 8 is shown in the result of haze value.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and with opposite
Value represents the measurement result of embodiment 27~28.
[table 8]
(evaluation of embodiment)
As embodiment 27~28 it is found that if the use level of abrasive grain included in composition for polishing increases, defect number
Increase.It is believed that its reason is：The amount of abrasive grain increases, so as to which the damage suffered by the wafer surface caused by the abrasive grain increases.
On the other hand, even if the use level of abrasive grain increases, haze value does not also almost change.
<Evaluation test 9>(embodiment 29~34, comparative example 4)
In embodiment 29, the composition for polishing with the composition for polishing identical component used in embodiment 2 is used
Sample 2。
The Sample 21 of embodiment 30 is in addition to by the use level of the polyalcohol (1) of the composition for polishing of embodiment 29
0.007 weight % is set as, is further combined with other than the pool Lip river sand amine of 0.007 weight %, the composition identical with embodiment 29.
The Sample 22 of embodiment 31 is in addition to by the use level of the polyalcohol (1) of the composition for polishing of embodiment 30
0.004 weight % is set as, further the use level for mooring Lip river sand amine is set as other than 0.010 weight %, it is identical with embodiment 30
Composition.
In embodiment 32, the composition for polishing with the composition for polishing identical component used in embodiment 4 is used
Sample 4。
The Sample 23 of embodiment 33 is in addition to by the ammonium hydroxide (NH of the composition for polishing of embodiment 304OH)
Use level is set as other than 0.50 weight %, the composition identical with embodiment 30.
The Sample 24 of embodiment 34 is in addition to by the ammonium hydroxide (NH of the composition for polishing of embodiment 314OH)
Use level is set as other than 0.50 weight %, the composition identical with embodiment 31.
In comparative example 4, the composition for polishing with the composition for polishing identical component used in comparative example 2 is used
Sample_CP2。
The ingredient of embodiment 29~34 and the composition for polishing of comparative example 4 is shown in table 9.
For the composition for polishing of above-described embodiment 29~34, comparative example 4 and reference example, with identical with embodiment 4~6
Grinding condition be ground.Also, carry out the measure of defect number and haze value.Will be measured the defects of number and haze value knot
Fruit is shown in table 9.Herein, the measurement result of number the defects of reference example and haze value is set as 100 and embodiment is represented with relative value
29~34 and the measurement result of comparative example 4.
[table 9]
(evaluation of embodiment)
If by embodiment 29,30 and comparative example that the sum of polyalcohol (1) and the use level for mooring Lip river sand amine are 0.014 weight %
4 are compared, then it is found that the embodiment 29,30 as the composition for polishing comprising polyalcohol and the comparison without polyalcohol
Example 4 is compared, and defect number, haze value significantly reduce.
If the equal embodiment 29,30 of the sum of polyalcohol (1) and the use level for mooring Lip river sand amine is compared, it is found that
With without pool Lip river sand amine embodiment 29 compared with, comprising pool Lip river sand amine embodiment 30 the defects of number and haze value reduce.
According to embodiment 31 and 32 it is found that the use level of the pool Lip river sand amine in composition for polishing is more than the reality of embodiment 31
The defects of applying example 32 number and haze value reduce.
By the comparison of embodiment 30 and embodiment 33 and the comparison of embodiment 31 and embodiment 34 it is found that if grinding is used
The content of ammonium hydroxide included in composition increases, then defect number and haze value increase.It is believed that its reason is：If hydrogen
The amount of amine-oxides increases, then ammonium hydroxide increases the etching power of silicon wafer, and wafer surface generates crude.
It will be understood that this time disclosed implementation form is to illustrate and unrestricted in all respects.The scope of the present invention is simultaneously
It is non-to illustrate to represent by above-mentioned implementation form, but represented by claims, it is intended to comprising with claims are impartial contains
Being had altered in justice and range.
Industrial availability
The present invention can be used for composition for polishing.
Claims (6)
1. a kind of composition for polishing, it includes：
Abrasive grain,
Selected from at least one of the vinyl alcohol resin of 1,2- diol structure units represented by following formula (1) water solubility
Macromolecule,
Polyalcohol and
Alkali cpd,
In formula, R1、R2And R3Separately represent hydrogen atom or organic group, X represents singly-bound or key chain, R4、R5And R6Respectively
Independently represent hydrogen atom or organic group, R7And R8Separately represent hydrogen atom.
2. composition for polishing according to claim 1 also includes nonionic surfactant.
3. composition for polishing according to claim 2, wherein,
The nonionic surfactant is the diamine compound represented by the following general formula (2), which includes tool
There is the Alkylenediamine structure of 2 nitrogen, and at least one block type polyethers be bonded on 2 nitrogen of the Alkylenediamine structure,
And the block type polyethers is that oxygen ethylidene is bonded with oxygen propylidene,
In formula, n represents more than 1 integer.
4. composition for polishing according to any one of claim 1 to 3, wherein,
As the polyalcohol, comprising two or more.
5. composition for polishing according to any one of claim 1 to 3, wherein,
The polyalcohol is the alkylene oxide derivative of methyl glucosamine.
6. composition for polishing according to claim 4, wherein,
The polyalcohol is the alkylene oxide derivative of methyl glucosamine.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015209326 | 2015-10-23 | ||
| JP2015-209326 | 2015-10-23 | ||
| PCT/JP2016/081307 WO2017069253A1 (en) | 2015-10-23 | 2016-10-21 | Polishing composition |
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| Publication Number | Publication Date |
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| CN108138032A true CN108138032A (en) | 2018-06-08 |
| CN108138032B CN108138032B (en) | 2021-02-12 |
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| CN201680061350.6A Active CN108138032B (en) | 2015-10-23 | 2016-10-21 | Polishing composition |
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| US (1) | US10696869B2 (en) |
| EP (1) | EP3366747B1 (en) |
| JP (1) | JP6856535B2 (en) |
| KR (1) | KR102657004B1 (en) |
| CN (1) | CN108138032B (en) |
| SG (1) | SG11201803362VA (en) |
| TW (1) | TWI713611B (en) |
| WO (1) | WO2017069253A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113227309A (en) * | 2018-12-25 | 2021-08-06 | 霓达杜邦股份有限公司 | Polishing composition |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180070586A (en) * | 2015-10-23 | 2018-06-26 | 니타 하스 인코포레이티드 | Abrasive composition |
| JP6978933B2 (en) * | 2017-12-27 | 2021-12-08 | ニッタ・デュポン株式会社 | Polishing composition |
| JP7158280B2 (en) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | Semiconductor polishing composition |
| US11702570B2 (en) * | 2019-03-27 | 2023-07-18 | Fujimi Incorporated | Polishing composition |
| JP2021105145A (en) * | 2019-12-27 | 2021-07-26 | ニッタ・デュポン株式会社 | Composition for polishing, and method of polishing silicon wafer |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102648265A (en) * | 2009-10-13 | 2012-08-22 | 株式会社Lg化学 | Slurry composition for CMP, and polishing method |
| JP2012216723A (en) * | 2011-04-01 | 2012-11-08 | Nitta Haas Inc | Polishing composition |
| CN103890114A (en) * | 2011-10-24 | 2014-06-25 | 福吉米株式会社 | Composition for polishing purposes, polishing method using same, and method for producing substrate |
| JP2014130958A (en) * | 2012-12-28 | 2014-07-10 | Kao Corp | Polishing liquid composition for silicon wafer |
| WO2014189684A1 (en) * | 2013-05-21 | 2014-11-27 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with high removal rate and low defectivity |
| CN104798181A (en) * | 2012-11-30 | 2015-07-22 | 霓达哈斯股份有限公司 | Polishing composition |
| CN105051145A (en) * | 2013-03-19 | 2015-11-11 | 福吉米株式会社 | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4212861B2 (en) | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | Polishing composition and silicon wafer polishing method using the same, and rinsing composition and silicon wafer rinsing method using the same |
| JP2014216464A (en) * | 2013-04-25 | 2014-11-17 | 日本キャボット・マイクロエレクトロニクス株式会社 | Slurry composition and substrate polishing method |
-
2016
- 2016-10-21 TW TW105134181A patent/TWI713611B/en active
- 2016-10-21 JP JP2017545815A patent/JP6856535B2/en active Active
- 2016-10-21 SG SG11201803362VA patent/SG11201803362VA/en unknown
- 2016-10-21 US US15/769,934 patent/US10696869B2/en active Active
- 2016-10-21 CN CN201680061350.6A patent/CN108138032B/en active Active
- 2016-10-21 EP EP16857566.0A patent/EP3366747B1/en active Active
- 2016-10-21 WO PCT/JP2016/081307 patent/WO2017069253A1/en active Application Filing
- 2016-10-21 KR KR1020187011068A patent/KR102657004B1/en active IP Right Grant
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102648265A (en) * | 2009-10-13 | 2012-08-22 | 株式会社Lg化学 | Slurry composition for CMP, and polishing method |
| JP2012216723A (en) * | 2011-04-01 | 2012-11-08 | Nitta Haas Inc | Polishing composition |
| CN103890114A (en) * | 2011-10-24 | 2014-06-25 | 福吉米株式会社 | Composition for polishing purposes, polishing method using same, and method for producing substrate |
| CN104798181A (en) * | 2012-11-30 | 2015-07-22 | 霓达哈斯股份有限公司 | Polishing composition |
| JP2014130958A (en) * | 2012-12-28 | 2014-07-10 | Kao Corp | Polishing liquid composition for silicon wafer |
| CN105051145A (en) * | 2013-03-19 | 2015-11-11 | 福吉米株式会社 | Polishing composition, method for producing polishing composition, and kit for preparing polishing composition |
| WO2014189684A1 (en) * | 2013-05-21 | 2014-11-27 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with high removal rate and low defectivity |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113227309A (en) * | 2018-12-25 | 2021-08-06 | 霓达杜邦股份有限公司 | Polishing composition |
| CN113227309B (en) * | 2018-12-25 | 2022-10-11 | 霓达杜邦股份有限公司 | Polishing composition |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180312725A1 (en) | 2018-11-01 |
| TW201728735A (en) | 2017-08-16 |
| JP6856535B2 (en) | 2021-04-07 |
| EP3366747A4 (en) | 2018-10-10 |
| US10696869B2 (en) | 2020-06-30 |
| SG11201803362VA (en) | 2018-05-30 |
| TWI713611B (en) | 2020-12-21 |
| EP3366747B1 (en) | 2022-10-05 |
| WO2017069253A1 (en) | 2017-04-27 |
| JPWO2017069253A1 (en) | 2018-08-09 |
| KR20180072693A (en) | 2018-06-29 |
| CN108138032B (en) | 2021-02-12 |
| EP3366747A1 (en) | 2018-08-29 |
| KR102657004B1 (en) | 2024-04-15 |
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