CN108133906A - Wafer processing apparatus and wafer processing - Google Patents
Wafer processing apparatus and wafer processing Download PDFInfo
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- CN108133906A CN108133906A CN201711438495.6A CN201711438495A CN108133906A CN 108133906 A CN108133906 A CN 108133906A CN 201711438495 A CN201711438495 A CN 201711438495A CN 108133906 A CN108133906 A CN 108133906A
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- chip
- wafer processing
- cover board
- processing apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
This disclosure relates to a kind of wafer processing apparatus, including：Cover board; the cover board is suitable for covering the fringe region of the intermediate region of the chip and the exposure chip; wherein; the fringe region of the cover board is provided with gas outlet close to the surface of the chip, and the gas outlet is configured to the surface that the protective gas being passed through inside the cover board is made to flow to the chip and forms continuous protection zone.The disclosure further relates to a kind of wafer processing.The disclosure can adjust the size of wafer processing zones in the case where not needing to replace wafer processing apparatus.
Description
Technical field
This disclosure relates to technical field of semiconductors, it particularly relates to a kind of wafer processing apparatus and wafer processing.
Background technology
It is because the film layer formed on an edge of the wafer in the fabrication process may that the fringe region of chip, which is etched,
Cause defect.The film layer to be formed on an edge of the wafer can be removed by Waffer edge etching.
Accordingly, there exist the demands to new technology.
Invention content
One purpose of the disclosure is to provide a kind of wafer processing apparatus and wafer processing.
According to the disclosure in a first aspect, provide a kind of wafer processing apparatus, including：Cover board, the cover board are suitable for hiding
The fringe region of the intermediate region of the chip and the exposure chip is covered, wherein, the close institute of the fringe region of the cover board
The surface for stating chip is provided with gas outlet, and the gas outlet is configured to that the protective gas being passed through inside the cover board is made to flow to institute
It states the surface of chip and forms continuous protection zone.
In some embodiments, the cover board is also structured to by the pressure of the protective gas being passed through inside the cover board
Power limits the width of the protection zone.
In some embodiments, the surface of the close chip of the fringe region of the cover board is configured to inclined-plane, institute
It states inclined-plane outward and extends to the direction far from the chip.
In some embodiments, the gas outlet is multiple, and multiple gas outlets are circumferentially evenly distributed in described
On the surface of the close chip of the fringe region of cover board.
In some embodiments, all or part of gas outlet in multiple gas outlets be configured to be opened and
It closes.
In some embodiments, cavity is formed with inside the cover board, the gas outlet is connected with the cavity, the lid
Plate further includes the air inlet connected with the cavity, and the protective gas is passed through by the air inlet inside the cover board.
In some embodiments, the cavity is configured to fringe region cyclic annular and positioned at the cover board.
In some embodiments, the continuous protection zone is ring-type.
In some embodiments, the cover board includes upper cover plate and lower cover, and the lower cover is additionally operable to brilliant described in support
Piece.
In some embodiments, the protective gas is non-etching property and non-oxidizing gas.
According to the second aspect of the disclosure, a kind of wafer processing apparatus is provided, including：Protection ring, the protection ring are fitted
In the subregion for covering the chip, wherein, the protection ring is provided with gas outlet close to the surface of the chip, described
The protective gas that gas outlet is configured to make to be passed through the inside of the protection ring flows to the surface of the chip and is formed continuous
Protection zone.
According to the third aspect of the disclosure, a kind of wafer processing is provided, the wafer processing is based on above-mentioned
Wafer processing apparatus, the wafer processing include：According to the marginal zone etched for the Waffer edge of the chip
The width in domain determines to be passed through the pressure value of the protective gas inside the cover board；Control is passed through the protection gas inside the cover board
The pressure of body is the identified pressure value；And carry out the Waffer edge etching processing.
According to the fourth aspect of the disclosure, a kind of wafer processing is provided, the wafer processing is based on above-mentioned
Wafer processing apparatus, the wafer processing include：According to the marginal zone etched for the Waffer edge of the chip
The width in domain determines the pressure value of the protective gas for the inside for being passed through the protection ring；Control is passed through the inside of the protection ring
Protective gas pressure be the identified pressure value；And carry out the Waffer edge etching processing.
According to the 5th of the disclosure the aspect, a kind of wafer processing is provided, the wafer processing is based on above-mentioned
Wafer processing apparatus, the wafer processing include：According to the marginal zone etched for the Waffer edge of the chip
The width in domain determines to need position and/or the number of pent gas outlet；It needs pent respectively to go out determined by closing
Gas port；And carry out the Waffer edge etching processing.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
With reference to attached drawing, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 is a use state of the wafer processing apparatus for schematically showing one embodiment according to the disclosure
Schematic diagram.
Fig. 2 is a use state of the wafer processing apparatus for schematically showing one embodiment according to the disclosure
Schematic diagram.
Fig. 3 is a use state of the wafer processing apparatus for schematically showing one embodiment according to the disclosure
Schematic diagram.
Fig. 4 is a use state of the wafer processing apparatus for schematically showing one embodiment according to the disclosure
Schematic diagram.
Fig. 5 is a use state of the wafer processing apparatus for schematically showing one embodiment according to the disclosure
Schematic diagram.
Fig. 6 is the schematic diagram of the structure for the wafer processing apparatus for schematically showing one embodiment according to the disclosure.
Fig. 7 is the schematic diagram of the structure for the wafer processing apparatus for schematically showing one embodiment according to the disclosure.
Fig. 8 is the schematic diagram of the structure for the wafer processing apparatus for schematically showing one embodiment according to the disclosure.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeated explanation.In the present specification, using similar mark
Number and letter represent similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. does not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition have
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the disclosure, " one embodiment ", referring to for " some embodiments " are meaned to combine embodiment description
Feature, structure or characteristic are included at least one embodiment of the disclosure, at least some embodiments.Therefore, phrase is " at one
In embodiment ", " in some embodiments " be not necessarily referring in the appearance everywhere of the disclosure it is same or with some embodiments.This
It outside, in one or more embodiments, can in any suitable combination and/or sub-portfolio comes assemblage characteristic, structure or characteristic.
In some embodiments, the wafer processing apparatus of the disclosure includes cover board, and cover board is suitable for covering the middle area of chip
Domain and the fringe region of exposure chip, the fringe region being exposed of chip can be used for Waffer edge etching.Wherein, cover board
The surface of the close chip of fringe region is provided with gas outlet, and gas outlet is configured to make to be passed through the protective gas stream inside cover board
To the surface of chip and continuous protection zone is formed, so as to which, the surface of chip is positioned at the outside of the continuous protection zone
The part in the outside on boundary is the above-mentioned fringe region being exposed, and can be used for Waffer edge etching.
Below in conjunction with the accompanying drawings 1 to 8 and specific embodiment illustrate the wafer processing apparatus of the disclosure and chip processing side
Method.
In some embodiments, the wafer processing apparatus of the disclosure includes upper cover plate 20 and lower cover 30.Wherein, upper cover plate
20 are suitable for covering the fringe region of the intermediate region of the upper surface of chip 10 and the upper surface of exposure chip 10, and lower cover 30 is suitable for
Cover the fringe region of the intermediate region of the lower surface of chip 10 and the lower surface of exposure chip 10.In addition, lower cover 30 is also used
In support chip 10.
The fringe region of the lower surface of upper cover plate 20 is provided with gas outlet, and gas outlet is configured to make to be passed through upper cover plate 20
Internal protective gas (being shown by solid line with the arrow in figure) flows to the upper surface of chip 10 and forms protection zone 40.Outlet
Mouth is multiple, and multiple gas outlets are circumferentially evenly distributed in the fringe region of the lower surface of upper cover plate 20, so that in crystalline substance
The protection zone 40 formed on the upper surface of piece 10 is continuous.For example, when upper cover plate 20 is round, it is evenly distributed on upper cover
Multiple gas outlets in the fringe region of the lower surface of plate 20 are arranged as one or more ring-types, so that the protection zone formed
40 be cyclic annular (i.e. with the visual angle of the vertical view of Fig. 1 come when observing protection zone 40, protection zone 40 is annular in shape).Wherein, it protects
Gas is non-etching property and non-oxidizing gas, for example, nitrogen, argon gas etc..
So as to which the upper surface of chip 10 is divided by continuous protection zone 40 for three parts：It is covered protection zone 40
The part (i.e. in figure the upper surface of chip 10 positioned at the region of the lower section of protection zone 40) of lid, in protection zone 40
The part (i.e. in figure the upper surface of chip 10 in the part of the intermediate region of chip 10) of the inside on boundary and positioned at guarantor
Protect the part (portion of the fringe region in chip 10 of the upper surface of chip 10 i.e. in figure in the outside of the outer boundary in region 40
Point).Wherein, in Waffer edge etching processing, the protected area 40 of the upper surface of chip 10 covered partially due to having
The covering of protective gas, etching gas cannot reach, therefore the part will not be etched；The upper surface of chip 10 is located at protection
The part of the inside of the inner boundary in region 40, due to having the covering of upper cover plate 20 above and periphery has what protective gas was formed
The barrier of continuous protection zone 40, etching gas can not reach, therefore the part will not be etched；And chip 10 is upper
The part in the outside of the outer boundary positioned at protection zone 40 on surface, since etching gas can be touched, the part quilt
Etching.
The inside of upper cover plate 20 is formed with cavity 21, and above-mentioned each gas outlet is (out of cavity 21 outside downwardly directed cavity 21
The mouth that solid line with the arrow is passed through) it connects to flow out protective gas with cavity 21.Cavity 21 is configured to ring-type and is located at
The fringe region of upper cover plate 20.Upper cover plate 20 further includes air inlet (outside the cavity 21 downwardly directed cavity connected with cavity 21
The mouth that solid line with the arrow in 21 is passed through), protective gas is passed through the inside of upper cover plate 20 by air inlet.For example, protection gas
Body can be generated by air source, then by entering cavity 21 after the ventilation pipe of connection air source and air inlet, then from gas outlet
The upper surface of chip 10 is flowed to so as to form protection zone 40.
The structure of lower cover 30 is similar to the structure of upper cover plate 20.The fringe region of the upper surface of lower cover 30 is provided with out
Gas port, the protective gas (being shown by solid line with the arrow in figure) that gas outlet is configured to make to be passed through the inside of lower cover 30 flow to
The lower surface of chip 10 simultaneously forms protection zone 40.Gas outlet is multiple, and multiple gas outlets are circumferentially evenly distributed in lower cover
In the fringe region of the upper surface of plate 30, so that the protection zone 40 formed on the lower surface of chip 10 is continuous.Example
Such as, when lower cover 30 is round, multiple gas outlets arrangement in the fringe region for the upper surface for being evenly distributed on lower cover 30
It is cyclic annular for one or more, so that the protection zone 40 formed (is protected to be cyclic annular with the visual angle of the bottom view of Fig. 1 to observe
During region 40, protection zone 40 is annular in shape).Wherein, protective gas is non-etching property and non-oxidizing gas, for example, nitrogen, argon
Gas etc..
So as to which the lower surface of chip 10 is divided by continuous protection zone 40 for three parts：It is covered protection zone 40
The part (i.e. in figure the lower surface of chip 10 positioned at the region of the top of protection zone 40) of lid, in protection zone 40
The part (i.e. in figure the lower surface of chip 10 in the part of the intermediate region of chip 10) of the inside on boundary and positioned at guarantor
Protect the part (portion of the fringe region in chip 10 of the lower surface of chip 10 i.e. in figure in the outside of the outer boundary in region 40
Point).Wherein, in Waffer edge etching processing, the protected area 40 of the lower surface of chip 10 covered partially due to having
The covering of protective gas, etching gas cannot reach, therefore the part will not be etched；The lower surface of chip 10 is located at protection
There is a covering of lower cover 30 in the part of the inside of the inner boundary in region 40 and periphery has what protective gas was formed due to following
The barrier of continuous protection zone 40, etching gas can not reach, therefore the part will not be etched；And under chip 10
The part in the outside of the outer boundary positioned at protection zone 40 on surface, since etching gas can be touched, the part quilt
Etching.
The inside of lower cover 30 is formed with cavity 31, and above-mentioned each gas outlet (is directed upwards towards outside cavity 31 out of cavity 31
The mouth that solid line with the arrow is passed through) it connects to flow out protective gas with cavity 31.Cavity 31 is configured to ring-type and is located at
The fringe region of lower cover 30.Lower cover 30 further includes the air inlet connected with cavity 31 and (is directed upwards towards cavity outside cavity 31
The mouth that solid line with the arrow in 31 is passed through), protective gas is passed through the inside of lower cover 30 by air inlet.For example, protection gas
Body can be generated by air source, then by entering cavity 31 after the ventilation pipe of connection air source and air inlet, then from gas outlet
The lower surface of chip 10 is flowed to so as to form protection zone 40.
The structure of upper cover plate 20 with gas outlet can refer to Fig. 6 to 8.Fig. 6 to 8 is that upper cover plate 20 is looked up in Fig. 1 to 5
Schematic diagram.Upper cover plate 20 has intermediate region 22 and fringe region 23.Upper cover plate 20 can be an entirety, i.e., artificially drawn
Separate (for example, using dotted line in scheming as boundary) virtual intermediate region 22 and fringe region 23；Can also be by different components
Composition, you can be by the circular first component (for example, it may be in carrying out to other processing of chip for generate etc. from
The top electrode that daughter or plasma are accelerated) intermediate region 22 of upper cover plate 20 is used for or is formed as, by the of annular
Two components (for example, it may be the protection ring 20 ' described below with regard to Fig. 8) are used for or are formed as the marginal zone of upper cover plate 20
Domain 23.Multiple gas outlets 24 are circumferentially evenly distributed in the fringe region 23 of upper cover plate 20.Preferably, multiple gas outlets 24
Circumferentially the fringe region 23 of upper cover plate 20 is distributed in equably and radially evenly, as shown in Fig. 6 to 8.Multiple gas outlets
24 when being evenly distributed, this advantageously ensure that the protection zone 40 on the surface for being formed in chip 10 pressure and width it is uniform
Property.
The structure of upper cover plate 20 is described above in association with Fig. 6 to 8, due to the structure of lower cover 30 and the structure of upper cover plate 20
It is similar, therefore those skilled in the art can obtain the structure of lower cover 30 according to the description of the above-mentioned structure to upper cover plate 20.
In some embodiments, upper cover plate 20 and/or lower cover 30 are also structured to by being passed through upper cover plate 20 and/or lower cover
The pressure of the protective gas of the inside of plate 30 limits the size of protection zone 40, for example, limiting the width of protection zone 40.Example
Such as, when the pressure for being passed through the protective gas of inside of upper cover plate 20 and/or lower cover 30 is first pressure value, such as the institutes of Fig. 1 and 3
Show, be the first protection width value in the width d1 of protection zone 40 that the upper surface of chip 10 and/or lower surface are formed, at this point,
The upper surface of chip 10 and/or the width d2 in region (region etched for Waffer edge) that can be etched of lower surface
For the first etching width value.When the pressure of the protective gas for the inside for being passed through upper cover plate 20 and/or lower cover 30 is second pressure
Value and when second pressure value is more than first pressure value, as shown in Figures 2 and 4, forms in the upper surface of chip 10 and/or lower surface
The width d1 of protection zone 40 is the second protection width value, and the second protection width value is more than the first protection width value, at this point, brilliant
The upper surface of piece 10 and/or the width d2 in region (region etched for Waffer edge) that can be etched of lower surface are
Second etching width value, and the second etching width value is less than the first etching width value.In this way, it is set not needing to replacement chip processing
In the case of standby (for example, upper cover plate 20 and/or lower cover 30 or the protection ring 20 ' described below with regard to Fig. 8), just
The upper surface of chip 10 and/or the region (region etched for Waffer edge) that can be etched of lower surface can be adjusted
Width d2.
In some embodiments, the surface of the close chip of the fringe region of upper cover plate 20 and/or lower cover 30 is constructed
For inclined-plane, as shown in Figures 3 and 4, inclined-plane outward (direction for referring to the intermediate region far from upper cover plate 20 and/or lower cover 30) and to
Direction far from chip 10 extends.In this way, when the protection gas for the inside that upper cover plate 20 and/or lower cover 30 are passed through at air inlet
Under the pressure unanimous circumstances of body, have in each gas outlet of different distance to the center of upper cover plate 20 and/or lower cover 30
The pressure of gas when the protective gas of outflow reaches the surface of chip 10 simultaneously differs, this is to be passed through upper cover plate 20 by adjusting
And/or the pressure of the protective gas of the inside of lower cover 30 come adjust the upper surface of chip 10 and/or lower surface for chip
The width d2 in the region of etching edge provides higher flexibility.
In some embodiments, the wafer processing of the disclosure includes：According to the upper surface and/or lower surface of chip 10
The width d2 of the fringe region for Waffer edge etching determine to be passed through the protection inside upper cover plate 20 and/or lower cover 30
The pressure value of gas；The pressure that control is passed through the protective gas inside upper cover plate 20 and/or lower cover 30 is identified pressure
Value；And carry out Waffer edge etching processing.
It can be by pressure tune to the control of the pressure of the protective gas of inside for being passed through upper cover plate 20 and/or lower cover 30
Regulating device is realized.For example, pressure-regulating device can be arranged at air source, at ventilation pipe, and/or at air inlet, next pair
The pressure for being passed through the protective gas of the inside of upper cover plate 20 and/or lower cover 30 is adjusted.For example, pressure-regulating device can be with
By changing flow and/or the flow velocity of gas come the pressure of the protective gas of the inside to being passed through upper cover plate 20 and/or lower cover 30
Power is adjusted.It will be understood by those skilled in the art that the disclosure is passed through control the inside of upper cover plate 20 and/or lower cover 30
The device and method of pressure of protective gas there is no restriction, for any wafer processing procedure being applicable in suitable for the disclosure
Gas pressure control device and method be feasible.
It can be tested by DOE (Design Of Experiment) and be passed through upper cover plate 20 and/or lower cover to predefine
The pressure of the protective gas of the inside of plate 30 and the upper surface of chip 10 and/or the edge for Waffer edge etching of lower surface
Correspondence between the width d2 in region, for example, work as the protective gas for the inside for being passed through upper cover plate 20 and/or lower cover 30
When pressure is first pressure value, the fringe region for Waffer edge etching that upper cover plate 20 and/or lower cover 30 expose
Width d2 is the first etching width；When the pressure of the protective gas for the inside for being passed through upper cover plate 20 and/or lower cover 30 is second
During pressure value, the width d2 of the fringe region for Waffer edge etching that upper cover plate 20 and/or lower cover 30 expose is the
Two etching width etc..These correspondences can in advance be made to look-up table, state the wafer processing of the disclosure on the implementation
When, the width being etched according to the edge of chip 10 needs is come the corresponding protection gas for needing to be passed through cover board determining from look-up table
The pressure of body.
In some embodiments, as shown in figure 8, the wafer processing apparatus of the disclosure includes protection ring 20 ', protection ring 20 '
Suitable for covering the subregion of chip 10.Wherein, the surface of the close chip 10 of protection ring 20 ' is provided with gas outlet, gas outlet
It is configured to that the protective gas for the inside for being passed through protection ring 20 ' is made to flow to the surface of chip 10 and forms continuous protection zone
40.The structure of protection ring 20 ' is similar to the upper cover plate 20 in above description and/or the structure of the fringe region of lower cover 30, this
Field technology personnel are according to above to the description of the fringe region of upper cover plate 20 and/or lower cover 30, it can be deduced that protection ring 20 '
Structure.
In some embodiments, the wafer processing of the disclosure includes：It is etched according to chip 10 for Waffer edge
The width d2 of fringe region determine the pressure value of the protective gas for the inside for being passed through protection ring 20 '；Control is passed through protection ring
The pressure of the protective gas of 20 ' inside is identified pressure value；And carry out Waffer edge etching processing.To pressure value
It determines and the control to pressure and the control phase above to the determining of the pressure value in the description of wafer processing and to pressure
Seemingly, those skilled in the art can be obtained in these embodiments as described above to determining and to pressure the control of pressure value
The method of system.
In some embodiments, all or part of gas outlet in multiple gas outlets of upper cover plate 20 and/or lower cover 30
It is configured to be opened and closed (for example, can be by controlling the movement of moving stop that gas outlet is beaten on or off
It closes).For example, if multiple gas outlets of upper cover plate 20 and/or lower cover 30 are in upper cover plate 20 and/or the fringe region of lower cover 30
One or more ring-types are arranged as in 23, to upper cover plate 20 and/or multiple gas outlets of the distance maximum in the center of lower cover 30
(being arranged in each gas outlet in the ring-type of most peripheral) can be closed or to upper cover plate 20 and/or lower cover 30
Center distance maximum and second largest multiple gas outlets (be arranged in each outlet in two ring-types of most peripheral
Mouthful) can be closed.Gas port can be separated by close portion to change the width d1 of protection zone 40, so as to change chip 10
For Waffer edge etching fringe region width d2.
For example, when the pressure for being passed through the protective gas of inside of upper cover plate 20 and/or lower cover 30 is first pressure value,
Whole gas outlets of upper cover plate 20 and/or lower cover 30 are opened at this time, as shown in figure 3, in the upper surface of chip 10 and/or
The width d1 for the protection zone 40 that lower surface is formed is the first protection width value, at this point, the upper surface and/or lower surface of chip 10
The width d2 in region (region etched for Waffer edge) that can be etched for first etching width value.On being passed through
When the pressure of the protective gas of the inside of cover board 20 and/or lower cover 30 is still first pressure value, if at this time upper cover plate 20 and/
Or each gas outlet that lower cover 30 is located in the ring-type of most peripheral is closed, as shown in figure 5, the upper surface of chip 10 and/
Or the width d1 of protection zone 40 that lower surface is formed protects width value for third, it is wide that third protection width value is less than the first protection
Angle value the, at this point, region (area etched for Waffer edge that can be etched of the upper surface of chip 10 and/or lower surface
Domain) width d2 for third etch width value, third etching width value be more than first etching width value.This manner it is also possible to it realizes
In the case where not needing to replace wafer processing apparatus (for example, upper cover plate 20 and/or lower cover 30 or protection ring 20 '), just
The upper surface of chip 10 and/or the region (region etched for Waffer edge) that can be etched of lower surface can be adjusted
Width d2.
In some embodiments, the wafer processing of the disclosure includes：It is etched according to chip 10 for Waffer edge
The width d2 of fringe region determine to need position and/or the number of pent gas outlet；Needed determined by closing by
Each gas outlet closed；And carry out Waffer edge etching processing.It will be understood by those skilled in the art that can by with it is above-mentioned
DOE tests the position that similar DOE tests the gas outlet to predefine the pent upper cover plate 20 of needs and/or lower cover 30
And/or between the width d2 of the fringe region for Waffer edge etching of the upper surface and/or lower surface of number and chip 10
Correspondence, so as to fulfill the wafer processing of the disclosure in these embodiments.
Although only crystalline substance is schematically shown in the form of sectional view or bottom view (or vertical view) in the attached drawing of the disclosure
The structure of piece processing equipment, those skilled in the art can obtain the chip involved by the disclosure based on the content that the disclosure is recorded
The whole structure of processing equipment.
Word " A or B " in specification and claim is exclusively wrapped including " A and B " and " A or B " rather than only
It includes " A " or only includes " B ", unless otherwise specified.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other are orientated in other different orientations and operate.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
Preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in practical realization method with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection indirectly of element or other feature, including profit
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include the example below：
1. a kind of wafer processing apparatus, which is characterized in that including：
Cover board, the cover board are suitable for covering the fringe region of the intermediate region of the chip and the exposure chip,
Wherein, the surface of the close chip of the fringe region of the cover board is provided with gas outlet, the gas outlet quilt
It is configured to the surface that the protective gas being passed through inside the cover board is made to flow to the chip and forms continuous protection zone.
2. the wafer processing apparatus according to 1, which is characterized in that the cover board is also structured to described in described be passed through
The pressure of protective gas inside cover board limits the width of the protection zone.
3. the wafer processing apparatus according to 1, which is characterized in that the close chip of the fringe region of the cover board
Surface be configured to inclined-plane, the inclined-plane extends outward and to the direction far from the chip.
4. the wafer processing apparatus according to 1, which is characterized in that the gas outlet is multiple, multiple gas outlets
It is circumferentially evenly distributed on the surface of the close chip of the fringe region of the cover board.
5. the wafer processing apparatus according to 4, which is characterized in that all or part of outlet in multiple gas outlets
Mouth is configured to be opened and closed.
6. the wafer processing apparatus according to 1, which is characterized in that cavity, the outlet are formed with inside the cover board
Mouth is connected with the cavity, and the cover board further includes the air inlet connected with the cavity, and the protective gas is by the air inlet
Mouth is passed through inside the cover board.
7. the wafer processing apparatus according to 6, which is characterized in that the cavity is configured to cyclic annular and is located at the lid
The fringe region of plate.
8. the wafer processing apparatus according to 1, which is characterized in that the continuous protection zone is ring-type.
9. the wafer processing apparatus according to 1, which is characterized in that the cover board includes upper cover plate and lower cover, described
Lower cover is additionally operable to chip described in support.
10. the wafer processing apparatus according to 1, which is characterized in that the protective gas for it is non-etching property and it is non-oxide
Property gas.
11. a kind of wafer processing apparatus, which is characterized in that including：
Protection ring, the protection ring are suitable for covering the subregion of the chip,
Wherein, the surface of the close chip of the protection ring is provided with gas outlet, and the gas outlet is configured to make
The protective gas for being passed through the inside of the protection ring flows to the surface of the chip and forms continuous protection zone.
12. a kind of wafer processing, which is characterized in that the wafer processing is set based on the chip processing described in 1
Standby, the wafer processing includes：
Determine to be passed through the cover board according to the width of the fringe region etched for the Waffer edge of the chip
The pressure value of internal protective gas；
The pressure that control is passed through the protective gas inside the cover board is the identified pressure value；And
Carry out the Waffer edge etching processing.
13. a kind of wafer processing, which is characterized in that the wafer processing is set based on the chip processing described in 11
Standby, the wafer processing includes：
Determine to be passed through the protection according to the width of the fringe region etched for the Waffer edge of the chip
The pressure value of the protective gas of the inside of ring；
The pressure that control is passed through the protective gas of the inside of the protection ring is the identified pressure value；And
Carry out the Waffer edge etching processing.
14. a kind of wafer processing, which is characterized in that the wafer processing is set based on the chip processing described in 5
Standby, the wafer processing includes：
It determines to need according to the width of the fringe region etched for the Waffer edge of the chip pent
The position of gas outlet and/or number；
Pent each gas outlet is needed determined by closing；And
Carry out the Waffer edge etching processing.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrating rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope and spirit of the disclosure.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of wafer processing apparatus, which is characterized in that including：
Cover board, the cover board are suitable for covering the fringe region of the intermediate region of the chip and the exposure chip,
Wherein, the surface of the close chip of the fringe region of the cover board is provided with gas outlet, and the gas outlet is constructed
Protective gas to make to be passed through inside the cover board flows to the surface of the chip and forms continuous protection zone.
2. wafer processing apparatus according to claim 1, which is characterized in that the cover board is also structured to be passed through by described
The pressure of protective gas inside the cover board limits the width of the protection zone.
3. wafer processing apparatus according to claim 1, which is characterized in that the fringe region of the cover board close to described
The surface of chip is configured to inclined-plane, and the inclined-plane extends outward and to the direction far from the chip.
4. wafer processing apparatus according to claim 1, which is characterized in that the gas outlet to be multiple, it is multiple it is described go out
Gas port is circumferentially evenly distributed on the surface of the close chip of the fringe region of the cover board.
5. wafer processing apparatus according to claim 4, which is characterized in that all or part in multiple gas outlets
Gas outlet is configured to be opened and closed.
6. wafer processing apparatus according to claim 1, which is characterized in that cavity is formed with inside the cover board, it is described
Gas outlet is connected with the cavity, and the cover board further includes the air inlet connected with the cavity, and the protective gas is by described
Air inlet is passed through inside the cover board.
7. wafer processing apparatus according to claim 6, which is characterized in that the cavity is configured to cyclic annular and is located at institute
State the fringe region of cover board.
8. wafer processing apparatus according to claim 1, which is characterized in that the continuous protection zone is ring-type.
9. wafer processing apparatus according to claim 1, which is characterized in that the cover board includes upper cover plate and lower cover,
The lower cover is additionally operable to chip described in support.
10. wafer processing apparatus according to claim 1, which is characterized in that the protective gas for it is non-etching property and it is non-
Oxidizing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711438495.6A CN108133906A (en) | 2017-12-27 | 2017-12-27 | Wafer processing apparatus and wafer processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711438495.6A CN108133906A (en) | 2017-12-27 | 2017-12-27 | Wafer processing apparatus and wafer processing |
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| CN108133906A true CN108133906A (en) | 2018-06-08 |
Family
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| CN201711438495.6A Pending CN108133906A (en) | 2017-12-27 | 2017-12-27 | Wafer processing apparatus and wafer processing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118073250A (en) * | 2024-04-24 | 2024-05-24 | 广州市艾佛光通科技有限公司 | Etching cavity, etching device and etching method |
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Application publication date: 20180608 |