CN108133888A - A kind of deep silicon etching method - Google Patents
A kind of deep silicon etching method Download PDFInfo
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- CN108133888A CN108133888A CN201611091420.0A CN201611091420A CN108133888A CN 108133888 A CN108133888 A CN 108133888A CN 201611091420 A CN201611091420 A CN 201611091420A CN 108133888 A CN108133888 A CN 108133888A
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- 238000005530 etching Methods 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 73
- 239000010703 silicon Substances 0.000 title claims abstract description 73
- 230000008021 deposition Effects 0.000 claims abstract description 59
- 239000007789 gas Substances 0.000 claims abstract description 58
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical group [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims abstract description 7
- 230000007704 transition Effects 0.000 claims description 25
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 241000720974 Protium Species 0.000 claims description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 45
- 244000025254 Cannabis sativa Species 0.000 description 13
- 229910018503 SF6 Inorganic materials 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 4
- 238000006557 surface reaction Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
The present invention discloses a kind of deep silicon etching method, it includes etch step and deposition step, the etch step and the deposition step alternate cycles are up to etching into predetermined depth, in the deposition step, are passed through deposition gases and are deposited by the first auxiliary gas that carbon and protium form.By above-mentioned deep silicon etching method, the line width loss at the top of etched features can be reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of deep silicon etching method.
Background technology
As MEMS (MEMS, Micro-Electro-Mechanical Systems) should by more and more extensive
For automobile and consumer electronics field and silicon hole (Through Silicon Etch, abbreviation TSV) lithographic technique in future
The bright prospects of encapsulation field, dry plasma deep silicon etching technique are increasingly becoming in MEMS manufacture fields and TSV technology
One of prevailing technology.
Deep silicon etching technique is relative to the main distinction of general silicon etching process：First, deep silicon etching technique
Etching depth generally in tens microns or even microns up to a hundred, is much larger than the etching for being less than 1 micron of general silicon etching process
Depth；Second, in order to which etch thicknesses are tens microns or more of silicon chip, deep silicon etching technique then need faster etch rate,
The higher depth-to-width ratio for selecting when bigger.
Deep silicon etching technique generally comprises deep-hole etching process, deep trouth according to etch topography to etch work with technique and cylindricality
Several big types such as skill.Bosch techniques can be used in deep silicon etching technique, as shown in Figure 1, in Bosch techniques, entire etching process
For the alternate cycles of deposition step 101 and etch step 102, until reaching required etching depth.Wherein, deposition step
101；Process gas is usually C used by deposition step 1014F8(carbon tetrafluoride), C4F8Resolved under plasmoid from
Sub- state CFx +Base, CFx -Base and F- bases, wherein CFx +Base and CFx -Base and silicon surface reaction form nCF2Macromolecule passivating film, it is as follows
Shown in reaction equation (1) and formula (2).
C4F8+e-→CFx ++CFx -+F-+e- (1)
CFx -→nCF2 (2)
Process gas is usually SF used by etch step 1026(sulfur hexafluoride), by SF6It is free that gas ionization generates F
Base and SxFyPlasma, first, F free radicals and nCF2Reactive ion etching falls passivating film, and generates escaping gas CF2, this
In the process, although F free radicals participate in reacting and play certain effect, that actually play a major role is SxFyPlasma
Bombardment to passivating film.Si base material etchings are carried out later, and the etching of Si base materials is mainly generated with F free radicals and Si reactions
SiFx, belong to chemical etching, while SxFyIon pair Si has physical bombardment effect, with F free radicals etching phase ratio, SxFyThe object of ion
The contribution that reason bombardment etches Si is small, therefore during this, and what is played a major role is F free radicals, following reaction formula (3),
(4), shown in (5).
SF6+e-→SxFy ++SxFy -+F-+e- (3)
nCF2 ++F-→CFx -→CF2↑ (4)
Si+F-→SiFx (5)
Problems with is found in above-mentioned cylindricality etching process：It with etching depth gradually increases, the quarter of generation
The velocity of discharge of erosion by-product continuously decreases, the etch by-products and the S for participating in reactingxFyIon and F free radicals collide general
Rate greatly increases, this can cause the free path for the ion for participating in reacting to reduce, and therefore, energy possessed by ion reduces, ion
It is more difficult to go deep into etching bottommost participation reaction, in this way, for mainly with SxFyBeing produced to deposition based on the bombardment effect of ion
Raw nCF2The etching of macromolecule passivating film, etching depth is deeper, reaches the density of ion of cylindricality bottommost less and energy
It is smaller, so bombardment effect significantly reduces, remaining passivating film is caused to be difficult to remove in time, in subsequent deposition process constantly
Accumulation after eventually passing through Multiple depositions and etching alternate cycles, can form similar " micro- mask " (micro-mask), when serious
Silicon grass can be even formed, as shown in Figure 2 a and 2 b.Meanwhile with etching depth be continuously increased, main carve is played to Si base materials
The F free radicals of erosion effect are continuously decreased in the concentration of cylindricality bottommost, this causes silicon column entirety etch rate to continuously decrease.
For the silicon grass phenomenon for solving to occur in above-mentioned etching technics, at present using following two modes：The first, using compared with
High upper radio-frequency power and lower radio-frequency power.As etching depth is deepened, air pressure continuously decreases so that particle obtain it is larger from
By journey, make it have the passivating film that larger energy goes etching deposition to generate, this reduce to a certain extent etching depth by
Gradually deepen the adverse effect brought to ion energy, can effectively solve the problem that silicon grass problem, but radio-frequency power is by hardware such as power sources
Limitation, there are certain SC service ceilings.
Second, after a deposition/etch cycle is completed, before subsequent cycle starts, introduce a step " bottom is smooth "
Step.Under relatively low operation pressure, the gas containing F of certain flow is introduced in processing chamber, the passivating film of deposition is carried out
Etching avoids the appearance of silicon grass phenomenon caused by being remained due to passivating film.
However, although the appearance of silicon grass phenomenon can be solved using above two method, in the bottom of etched features
Corrasion is increased, other technologies problem can be brought：As shown in figure 3, because while etching bottom silicon grass, etching figure
The top of shape is more stronger than the lateral plasma bombardment energy that the bottom of etched features is subject to, and therefore, can cause etched features
Pattern causes the diameter dimension damage at the top of etched features more serious into trapezoid, that is, causes line width loss serious.
Invention content
The present invention provides a kind of deep silicon etching method, can reduce the line width loss at the top of etched features.
In order to achieve the above-mentioned object of the invention, an embodiment of the present invention provides a kind of deep silicon etching methods, are walked including etching
Rapid and deposition step, the etch step and the deposition step alternate cycles are until etch into predetermined depth, in the deposition
In step, it is passed through deposition gases and is deposited by the first auxiliary gas that carbon and protium form.
Preferably, it between the deposition step of each cycle and the etch step, further includes：Transition step；
In the transition step, be passed through etching gas and second auxiliary gas perform etching, it is described second auxiliary gas carbon elements and
Fluorine element.
Preferably, the atom number ratio of the carbon in the second auxiliary gas and fluorine element is less than 0.5.
Preferably, the first auxiliary gas is C2H4。
Preferably, the second auxiliary gas is CHF3。
Preferably, the process pressure of the deposition step, the etch step and the transition step is as etching is deep
The increase of degree continuously decreases in a certain range.
Preferably, in the deposition step, the etch step and the transition step, the process pressure it is initial
Ranging from 50mT~the 200mT, ranging from 10mT~30mT of end value of value.
Preferably, in the deposition step, the etch step and the transition step, the process pressure it is initial
Ranging from 50mT~the 80mT, ranging from 10mT~20mT of end value of value.
Preferably, the technological parameter of the deposition step includes：The deposition gases are C4F8, C4F8Throughput range
For 100sccm~200sccm, C2H4Throughput ranging from 50sccm~100sccm；The ranging from 1000W of exciting power~
2000W；Substrate bias power is 0W；Process time 2s~3s.
Preferably, the technological parameter of the transition step includes：The etching gas is SF6, SF6Throughput ranging from
100sccm~200sccm, CHF3Throughput ranging from 50sccm~100sccm；The range of exciting power 1000W~
2000W；Ranging from 30W~50W of substrate bias power；Process time 1s~2s.
Beneficial effects of the present invention include：
Deep silicon etching technique provided by the invention, due to be also passed through in deposition step carbon and protium composition
First auxiliary gas, in this way, generate carbon particle, hydrocarbon particle after the first auxiliary gas ionization, without there may be fluorine-based, because
This, the content ratio of carbon and fluorine element in significant increase unit volume can be effectively improved on the side wall of etched features
The formation efficiency of passivating film, thus the transverse direction that passivating film of the generation on the side wall at the top of etched features can be made to keep out ion is banged
It hits, so as to reduce the line width loss at the top of etched features；But also due to the carbon particle need with deposition gases ionization after
F bases, silicon surface reaction generation passivating film, that is, need to consume the F bases after deposition gases ionization, therefore, it is possible to more effectively
F base concentration is reduced, so as to reduce influence of the F bases to passivating film on the side wall at the top of etched features, further reduces etching figure
Line width loss at the top of shape.
Description of the drawings
Fig. 1 is the flow chart of typical Bosch techniques；
Fig. 2 a are the electron-microscope scanning figure using the first etched features after the progress technique of etching technics shown in Fig. 1；
Fig. 2 b are the electron-microscope scanning figure using second of etched features after the progress technique of etching technics shown in Fig. 1；
Electron-microscope scanning figures of the Fig. 3 for the etched features after existing etching technics progress technique；
Fig. 4 is the flow chart of deep silicon etching method that the embodiment of the present invention 1 provides；
Fig. 5 is the flow chart of deep silicon etching method that the embodiment of the present invention 2 provides；
Fig. 6 is the electron-microscope scanning for the etched features that the etching technics provided using the embodiment of the present invention 2 is carried out after technique
Figure.
Specific embodiment
For those skilled in the art is made to more fully understand technical scheme of the present invention, below in conjunction with the accompanying drawings to of the invention real
The deep silicon etching method for applying example offer is described in detail.
Embodiment 1
Fig. 4 is the flow chart of deep silicon etching method that the embodiment of the present invention 1 provides, including etch step 102 and deposition
Step 101, etch step 102 and 101 alternate cycles of deposition step are up to etching into predetermined depth, in deposition step 101, lead to
Enter deposition gases and deposited by the first auxiliary gas that carbon and protium form.
Due to being also passed through the first auxiliary gas of carbon and protium composition in deposition step 101, in this way, first
Carbon particle, hydrocarbon particle are generated after assisting gas ionization, without there may be fluorine-based, therefore, in significant increase unit volume
The content ratio of carbon and fluorine element can effectively improve the formation efficiency of passivating film on the side wall of etched features, thus can
Passivating film of the generation on the side wall at the top of etched features is made to keep out the lateral bombardment of ion, so as to reduce etched features top
The line width loss in portion；But also due to the carbon particle need with deposition gases ionization after F bases, silicon surface reaction generation be passivated
Film needs to consume the F bases after deposition gases ionization, therefore can more effectively reduce F base concentration, so as to reduce F bases
Influence to passivating film on the side wall at the top of etched features further reduces the line width loss at the top of etched features.
In this embodiment, it is preferred that etch step 102 and the process pressure of deposition step 101 are with etching depth
Increase continuously decrease in a certain range, since etch step 102 and the process pressure of deposition step 101 are as etching is deep
The increase of degree continuously decreases in a certain range so that particle obtains larger free path, makes it have larger energy and goes to bang
The polymer of product generation is sunk, this reduces etching depth and gradually deepens the unfavorable shadow brought to ion energy to a certain extent
It rings, can effectively solve the problem that silicon grass problem, while selection ratio can't be had an impact.
In conclusion deep silicon etching technique provided in an embodiment of the present invention, does not have the basis of silicon grass in guarantee silicon column bottom
On, the line width loss at the top of silicon column is reduced, more vertical and smooth bottom etch topography can be obtained, while can't be to choosing
It selects than having an impact.
It is that in the present embodiment, the present invention simultaneously limits the first auxiliary gas to need described herein, if by carbon and
The gas of protium composition.
It should also be noted that, the present invention uses etch step 102 and the process pressure of deposition step 101 with etching
The increase of depth continuously decreases in a certain range, and to avoid generating silicon grass phenomenon, still, the present invention is not limited thereto,
In practical application, the generation of silicon grass phenomenon can also be avoided using other processes, therefore, can ensure silicon column bottom
On the basis of not having silicon grass, the line width loss at the top of silicon column is reduced, more vertical and smooth bottom etch topography can be obtained.
Embodiment 2
Fig. 5 is the flow chart of deep silicon etching method that the embodiment of the present invention 2 provides, referring to Fig. 5, the embodiment of the present invention carries
The deep silicon etching method of confession and the deep silicon etching method that above-described embodiment 1 provides are similar, equally include deposition step 101 and carve
Step 102 is lost, since deposition step 101 and etch step 102 have been carried out describing in detail in above-described embodiment 1,
This is repeated no more.
The difference of the present embodiment and above-described embodiment 1 is only described below.Specifically, in the present embodiment, it is followed each
Between the deposition step 101 of ring and etch step 102, further include：Transition step 103 is passed through etching gas and the second auxiliary gas
Body performs etching, the second auxiliary gas carbon elements and fluorine element.
Since in etching process, the thickness of the passivating film of the deposited on sidewalls of etched features may be unevenly distributed, blunt
The region for changing the thinner thickness of film is likely to easily open (i.e. the silicon face in the region is exposed) by lateral etching, in the case,
It can occur instead with exposed silicon face in time after being ionized by the second auxiliary gas containing carbon and fluorine element
Passivating film should be generated, the sidewall silicon of etched features is protected in time, more vertical etch topography can be obtained.
Described herein to be, transition step 103 has to be added between deposition step 101 and etch step 102, because should
The premise of transition step 103 is to have accumulated which comparable passivating film on the side wall of etched features in deposition step 101, only
In this way, transition step 103, which could be realized, not only etches passivating film, but also is protected in exposed silicon face generation passivating film,
This is because only accumulated on the side wall of etched features after certain passivating film, it can be timely by the second auxiliary gas
It reacts to form passivating film with laterally being carved the silicon face exposed point opened, the passivating film composition thickness so as to be formed with deposition step is equal
Even protective layer.On the contrary, if transition step 103 is arranged on after etch step, protecting effect is not up to, this is because
After etch step, passivating film is very weak on the side wall of etched features, and silicon exposed area is larger, transition step 103
In the second auxiliary gas have little time to complete to be etched gas with the silicon surface reaction of larger area, the side walls of etched features
Etching.
Preferably due to for the etching of silicon, it is fluorine-based to play a major role, therefore, in order to avoid the shadow to silicon etch rate
It rings, it (is C i.e. less than deposition gases to be less than 0.5 by the atom number ratio of carbon and fluorine element4F8Carbon and fluorine element
Atom number ratio), fluorine-based content is influenced when can react with silicon face to avoid the second auxiliary gas and generate passivating film, into
And influence etch rate.
Furthermore it is preferred that the process pressure of transition step 103 gradually drops in a certain range with the increase of etching depth
It is low, in this way, deposition step 101, transition step 103 and etch step 102 process pressure with the increase of etching depth
In the case of continuously decreasing in a certain range, based on the identical operation principle of above-described embodiment 1, can farthest it avoid
The generation of silicon grass phenomenon.
In this embodiment, it is preferred that the first auxiliary gas is C2H4.But the present invention is not limited thereto, in reality
In, the first auxiliary gas can also be CH4、CH3CH3、C2H2In one kind or and C2H4In a variety of mixed gas
Body.
Preferably, the second auxiliary gas is CHF3.But the present invention is not limited thereto, in practical applications, second is auxiliary
It can also be CF to help gas4；Alternatively, the second auxiliary gas is CHF3And CF4Mixed gas.
Preferably, in deposition step 101, etch step 102 and transition step 103, the model of the initial value of process pressure
It encloses for 50mT~200mT, ranging from 10mT~30mT of end value, in this way, the unit area of applicable cylindricality etching technics is opened
The adjustable extent of mouth rate is larger.
It is further preferred that in deposition step 101, etch step 102 and transition step 103, process pressure it is initial
Value ranging from 50mT~80mT, ranging from 10mT~20mT of end value, in this way, can be adapted for unit area aperture opening ratio compared with
Small cylindricality etching technics.
Specifically, the technological parameter of deposition step 101 includes：Deposition gases are C4F8, C4F8Throughput ranging from
100sccm~200sccm, C2H4Throughput ranging from 50sccm~100sccm；The ranging from 1000W of exciting power~
2000W；Substrate bias power is 0W；Process time 2s~3s.
The technological parameter of transition step 103 includes：Etching gas is SF6, SF6Throughput ranging from 100sccm~
200sccm, CHF3Throughput ranging from 50sccm~100sccm；The range of exciting power is in 1000W~2000W；Bias
Ranging from 30W~50W of power；Process time 1s~2s.
Deep silicon etching technique provided in an embodiment of the present invention is proved below by realizing.Specifically, the work of deposition step 101
Skill parameter includes：Process pressure is gradually decrease to 15mT from 60mT；Exciting power is 1200W；Substrate bias power is 0W, C4F8Gas
Flow is 200sccm；C2H4Throughput be 50sccm；Technological temperature is 20 DEG C；Process time is 2s.
The technological parameter of transition step 103 includes：Process pressure is gradually decrease to 15mT from 60mT；Exciting power is
1500W；Substrate bias power is 30W；SF6Throughput be 100sccm；CHF3Throughput be 100sccm；Technological temperature is 20 DEG C；
Process time is 1s.
The technological parameter of etch step 102 includes：Process pressure is gradually decrease to 15mT from 60mT；Exciting power is
1500W；Substrate bias power is 30W；SF6Throughput be 200sccm；Technological temperature is 20 DEG C；Process time is 2.5s.
Repeat above-mentioned deposition step 101, transition step 103 and etch step 102 totally 200 times.
Fig. 6 is using the electron-microscope scanning figure of the etched features after above-mentioned etching technics progress technique, referring to Fig. 6, can
To find out：Etched features are silicon column, and silicon column sidewall profile is vertical and smooth, therefore, not only effectively reduces the line at the top of silicon column
Width loss, and silicon column bottom does not have silicon grass.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of deep silicon etching method, including etch step and deposition step, the etch step and the deposition step are handed over
For cycle until etching into predetermined depth, which is characterized in that in the deposition step, be passed through deposition gases and by carbon
It is deposited with the first auxiliary gas of protium composition.
2. deep silicon etching method according to claim 1, which is characterized in that the deposition step and institute in each cycle
Between stating etch step, further include：Transition step；
In the transition step, it is passed through etching gas and the second auxiliary gas performs etching, the second auxiliary gas is carbon containing
Element and fluorine element.
3. deep silicon etching method according to claim 2, which is characterized in that it is described second auxiliary gas in carbon and
The atom number ratio of fluorine element is less than 0.5.
4. deep silicon etching method according to claim 1, which is characterized in that the first auxiliary gas is C2H4。
5. the deep silicon etching method according to Claims 2 or 3, which is characterized in that the second auxiliary gas is CHF3。
6. deep silicon etching method according to claim 2, which is characterized in that the deposition step, the etch step and
The process pressure of the transition step is as the increase of etching depth continuously decreases in a certain range.
7. deep silicon etching method according to claim 6, which is characterized in that in the deposition step, the etch step
In the transition step, ranging from 50mT~200mT of the initial value of the process pressure, the ranging from 10mT of end value~
30mT。
8. deep silicon etching method according to claim 7, which is characterized in that in the deposition step, the etch step
In the transition step, ranging from 50mT~80mT of the initial value of the process pressure, the ranging from 10mT of end value~
20mT。
9. deep silicon etching method according to claim 4, which is characterized in that the technological parameter of the deposition step includes：
The deposition gases are C4F8, C4F8Throughput ranging from 100sccm~200sccm, C2H4Throughput ranging from
50sccm~100sccm；Ranging from 1000W~2000W of exciting power；Substrate bias power is 0W；Process time 2s~3s.
10. deep silicon etching method according to claim 5, which is characterized in that the technological parameter of the transition step includes：
The etching gas is SF6, SF6Throughput ranging from 100sccm~200sccm, CHF3Throughput ranging from 50sccm
~100sccm；The range of exciting power is in 1000W~2000W；Ranging from 30W~50W of substrate bias power；Process time 1s~
2s。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110211870A (en) * | 2019-06-18 | 2019-09-06 | 北京北方华创微电子装备有限公司 | Wafer thining method |
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| US20060205238A1 (en) * | 2002-08-02 | 2006-09-14 | Chinn Jeffrey D | Silicon-containing structure with deep etched features, and method of manufacture |
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| CN110211870A (en) * | 2019-06-18 | 2019-09-06 | 北京北方华创微电子装备有限公司 | Wafer thining method |
| CN110211870B (en) * | 2019-06-18 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Wafer thinning method |
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